CN101572259A - Full-color SMD and encapsulating method thereof - Google Patents
Full-color SMD and encapsulating method thereof Download PDFInfo
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- CN101572259A CN101572259A CN 200810067036 CN200810067036A CN101572259A CN 101572259 A CN101572259 A CN 101572259A CN 200810067036 CN200810067036 CN 200810067036 CN 200810067036 A CN200810067036 A CN 200810067036A CN 101572259 A CN101572259 A CN 101572259A
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- lead frame
- led chip
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- gold thread
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The invention discloses a full-color SMD and an encapsulating method thereof. The full-color SMD is realized by mainly taking a low-temperature co-fired ceramic as a substrate, independently mounting a red LED chip, a blue LED chip and a green LED chip on a lead frame on the substrate to encapsulate the red LED chip, the blue LED chip and the green LED chip into a reflection cup and filling transparent material to a substrate electric structure and LED chips in the reflection cup for encapsulation to achieve a full-color effect; and the heat produced during working is radiated through the low-temperature co-fired ceramic substrate to cool the LED chips during working.
Description
Technical field:
The present invention relates to the LED encapsulation technology, particularly a kind of is the encapsulation that baseplate material is made full-color patch light-emitting diode (SMD) with LTCC (LTCC), this method places in the reflector by the led chip encapsulation with three kinds of colors of red, green, blue, realize full-color effect by the electrical structure in encapsulating, and, pass through baseplate material with the heat that produces in its course of work---LTCC is transmitted out.
Background technology:
Because having the brightness inverse ratio linear with the rising of temperature, light-emitting diode (LED) descends, life-span is with the characteristic of the rising exponentially decline of temperature, so reliability and life-span in order to improve LED, temperature when needing reduction LED luminous, and the temperature when reducing LED work mainly contains following several approach: the speed of temperature rise when 1, reducing Light-Emitting Diode work, the encapsulation in the adding heat sink, to help its heat radiation; 2, set about from wafer material, adopt the big material of the coefficient of heat conduction to generate wafer; 3, set about from encapsulating material, adopt the big material of the coefficient of heat conduction to form encapsulation.
Existing encapsulating material is mainly based on PPA (poly-terephthalate p-phenylenediamine (PPD)), mainly is because PPA has mechanical performance preferably and the resistance to wear under high temperature resistant, high weldering intensity and toughness, the hot conditions.Yet, the phenomenon of flavescence takes place owing to the PPA material is subjected to extraneous humiture and action of ultraviolet ray easily, and installing heat sink operation additional will be when using the PPA material to do the LED encapsulation time in the face of heat radiation, this has just strengthened the cost in the production process, technology and quality problem.
And find that according to the coefficient of heat conduction contrast of the coefficient of heat conduction of LTCC and PPA material the former is 46 times of the latter, so adopting LTCC is that encapsulating material is the effective way that solves the light-emitting diode temperature rise.
Summary of the invention:
The object of the present invention is to provide a kind of full-color SMD and method for packing thereof, it is encapsulating material that this method adopts LTCC, thereby can transmit the heat that produces when LED works effectively.
For achieving the above object, the present invention adopts technical scheme as follows:
A kind of full-color SMD includes green LED chip, red LED chips and blue led chip, also includes a low-temperature co-fired ceramic substrate, and this substrate is provided with the first, second, third, fourth, the 5th, the 6th lead frame; Described green LED chip is installed on the 6th lead frame, and is electrically connected by gold thread and first, six lead frames; Described red LED chips is installed on second lead frame, and is electrically connected by gold thread and the 5th lead frame; Described blue led chip is installed on the 4th lead frame, and is electrically connected by gold thread and third and fourth lead frame.
Led chip and gold thread form the single structure body of 2.5*2.5mm by the encapsulation of transparent material body on the described low-temperature co-fired ceramic substrate lead frame.
Also be provided with connecting structure for electrical equipment on the described low-temperature co-fired ceramic substrate, this connecting structure for electrical equipment respectively with green LED chip, red LED chips and blue led chip separate connection.
Described structure is provided with reflector, and this reflector internal fixation has led chip.
Described red LED chips by adhesive securement on second lead frame, the green LED chip by adhesive securement on the 6th lead frame, the blue led chip by adhesive securement on the 4th lead frame.
A kind of full-color SMD method for packing is specially and passes through adhesive securement green LED chip on the 6th lead frame of low-temperature co-fired ceramic substrate, and this chip is electrically connected by gold thread and first, six lead frames;
On second lead frame of low-temperature co-fired ceramic substrate, pass through the adhesive securement red LED chips, and this chip is electrically connected by gold thread and the 5th lead frame;
On the 4th lead frame of low-temperature co-fired ceramic substrate, pass through adhesive securement blue led chip, and this chip is electrically connected by gold thread and third and fourth lead frame;
Described led chip and gold thread are encapsulated by the transparent material body, form the single structure body.
The present invention is a substrate by LTCC, and red, blue, green led chip independently is installed on the lead frame on the substrate, the led chip encapsulation of three kinds of colors of red, green, blue is placed in the reflector, realize full-color effect by the electrical structure in encapsulating, and, transmit out by low-temperature co-fired ceramic substrate with the heat that produces in its course of work.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the enlarged diagram of A among Fig. 1.
Identifier declaration among the figure: first lead frame 1, second lead frame 2, the 3rd lead frame 3, the 4th lead frame 4, the 5th lead frame 5, the 6th lead frame 6, red LED chips 7, blue led chip 8, green LED chip 9.
Embodiment:
For setting forth thought of the present invention and purpose, the present invention is described in further details below in conjunction with the drawings and specific embodiments.
As shown in Figure 1, a kind of full-color SMD of the present invention, include green LED chip 9, red LED chips 7 and blue led chip 8, wherein also include a substrate, this substrate is to adopt low-temperature co-burning ceramic material LTCC to make, described substrate is provided with first lead frame 1, second lead frame 2, the 3rd lead frame 3, the 4th lead frame 4, the 5th lead frame 5, the 6th lead frame 6, and these lead frames are on this substrate, and form the connecting structure for electrical equipment (PCB) on this substrate.
As shown in Figure 2, Fig. 2 is the enlarged diagram of A among Fig. 1.Wherein said green LED chip 9 is fixedly mounted on the 6th lead frame 6 by bonding agent or other welding compound, and an end is electrically connected with the 6th lead frame 6 by gold thread a, and green LED chip 9 other ends also are electrically connected by the gold thread b and first lead frame 1; Described red LED chips 7 is fixedly mounted on second lead frame 2 by bonding agent or other welding compound, and is electrically connected with the 5th lead frame 5 by gold thread c; Described blue led chip 8 also is fixedly mounted on the 4th lead frame 4 by bonding agent or other welding compound, and an end is electrically connected with the 4th lead frame 4 by gold thread d, and the other end then is electrically connected by gold thread e and the 3rd lead frame 3.
Independent mutually between circuit connection structure on the above-mentioned connecting structure for electrical equipment (PCB) and each led chip, and also be filled with transparent material in the reflector that forms, here said transparent material is preferably epoxy resin, it also can be a kind of material in amorphous polyamide resin or fluorocarbon, glass, the plastics, by this transparent material reflector is filled up and firmly (Gu) change, can form 2.5*2.5mm monomer structure of the present invention.
More than a kind of full-color SMD provided by the present invention and method for packing thereof are described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (6)
1, a kind of full-color SMD includes green LED chip, red LED chips and blue led chip, it is characterized in that also including a low-temperature co-fired ceramic substrate, and this substrate is provided with the first, second, third, fourth, the 5th, the 6th lead frame; Described green LED chip is installed on the 6th lead frame, and is electrically connected by gold thread and first, six lead frames; Described red LED chips is installed on second lead frame, and is electrically connected by gold thread and the 5th lead frame; Described blue led chip is installed on the 4th lead frame, and is electrically connected by gold thread and third and fourth lead frame.
2, full-color SMD according to claim 1 is characterized in that: led chip and gold thread form the single structure body of 2.5*2.5mm by the encapsulation of transparent material body on the described low-temperature co-fired ceramic substrate lead frame.
3, full-color SMD according to claim 1 is characterized in that: also be provided with connecting structure for electrical equipment on the described low-temperature co-fired ceramic substrate, this connecting structure for electrical equipment respectively with green LED chip, red LED chips and blue led chip separate connection.
4, full-color SMD according to claim 2 is characterized in that: described structure is provided with reflector, and this reflector internal fixation has led chip.
5, full-color SMD according to claim 1, it is characterized in that: described red LED chips by adhesive securement on second lead frame, the green LED chip by adhesive securement on the 6th lead frame, the blue led chip by adhesive securement on the 4th lead frame.
6, a kind of full-color SMD method for packing is characterized in that:
On the 6th lead frame of low-temperature co-fired ceramic substrate, pass through adhesive securement green LED chip, and this chip is electrically connected by gold thread and first, six lead frames;
On second lead frame of low-temperature co-fired ceramic substrate, pass through the adhesive securement red LED chips, and this chip is electrically connected by gold thread and the 5th lead frame;
On the 4th lead frame of low-temperature co-fired ceramic substrate, pass through adhesive securement blue led chip, and this chip is electrically connected by gold thread and third and fourth lead frame;
Described led chip and gold thread are encapsulated by the transparent material body, form the single structure body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810067036 CN101572259A (en) | 2008-04-30 | 2008-04-30 | Full-color SMD and encapsulating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810067036 CN101572259A (en) | 2008-04-30 | 2008-04-30 | Full-color SMD and encapsulating method thereof |
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| Publication Number | Publication Date |
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| CN101572259A true CN101572259A (en) | 2009-11-04 |
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| CN 200810067036 Pending CN101572259A (en) | 2008-04-30 | 2008-04-30 | Full-color SMD and encapsulating method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916756A (en) * | 2010-07-20 | 2010-12-15 | 昆山市华英精密模具工业有限公司 | Improved SMD-LED (Surface Mount Device-Light Emitting Diode) full color module |
| CN103208577A (en) * | 2013-03-15 | 2013-07-17 | 东莞市凯昶德电子科技股份有限公司 | Manufacturing method of light-emitting diode aluminum nitride ceramic support with concave cup |
| CN103928445A (en) * | 2013-01-16 | 2014-07-16 | 英飞凌科技股份有限公司 | Chip Arrangement And A Method For Forming A Chip Arrangement |
| WO2017148033A1 (en) * | 2016-03-03 | 2017-09-08 | 京东方科技集团股份有限公司 | Display substrate and production method thereof, and display device |
-
2008
- 2008-04-30 CN CN 200810067036 patent/CN101572259A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916756A (en) * | 2010-07-20 | 2010-12-15 | 昆山市华英精密模具工业有限公司 | Improved SMD-LED (Surface Mount Device-Light Emitting Diode) full color module |
| CN103928445A (en) * | 2013-01-16 | 2014-07-16 | 英飞凌科技股份有限公司 | Chip Arrangement And A Method For Forming A Chip Arrangement |
| CN103928445B (en) * | 2013-01-16 | 2017-07-28 | 英飞凌科技股份有限公司 | Chip apparatus and the method for forming chip apparatus |
| CN103208577A (en) * | 2013-03-15 | 2013-07-17 | 东莞市凯昶德电子科技股份有限公司 | Manufacturing method of light-emitting diode aluminum nitride ceramic support with concave cup |
| CN103208577B (en) * | 2013-03-15 | 2016-04-20 | 东莞市凯昶德电子科技股份有限公司 | With the preparation method of recessed cup LED aluminium nitride ceramics support |
| WO2017148033A1 (en) * | 2016-03-03 | 2017-09-08 | 京东方科技集团股份有限公司 | Display substrate and production method thereof, and display device |
| US10128220B2 (en) | 2016-03-03 | 2018-11-13 | Boe Technology Group Co., Ltd. | Display substrate, manufacturing method thereof, display device |
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Owner name: SHENZHEN JIUZHOU PHOTONICS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHENZHEN JIUZHOU PHOTOELECTRON CO., LTD. Effective date: 20100917 |
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Effective date of registration: 20100917 Address after: 518000, Guangdong, Shenzhen Guangming New District, Tong Tong Road, Jiuzhou Industrial Park, building No. one or two Applicant after: Shenzhen Jiuzhou Optoelectronics Technology Co., Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District Shajing Town Hall Dili Lu Sha two Lantian Science Park 7 Applicant before: Shenzhen Jiuzhou Photoelectron Co., Ltd. |
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Open date: 20091104 |