CN101567310A - Method for cleaning plasma film-forming device - Google Patents
Method for cleaning plasma film-forming device Download PDFInfo
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- CN101567310A CN101567310A CNA2009101337736A CN200910133773A CN101567310A CN 101567310 A CN101567310 A CN 101567310A CN A2009101337736 A CNA2009101337736 A CN A2009101337736A CN 200910133773 A CN200910133773 A CN 200910133773A CN 101567310 A CN101567310 A CN 101567310A
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- disassociation
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Abstract
The invention relates to a method for cleaning plasma film-forming device, in which a mixture gas containing hydroflurocarbon gas, oxygen and dissociative gas is used as the gas for cleaning to carry out plasma treatment, wherein the ratio of the dissociative gas is that the total amount of hydroflurocarbon gas and oxygen is of 5 vol percent to 10 vol percent. The pentafluoroethane is preferably selected as hydroflurocarbon gas, and more than one of CF4, C2F6, C3F8, c-C4F8, NF3 and N2O is preferably selected as the dissociative gas.
Description
Technical field
The present invention relates to the clean method of plasma film forming apparatus, relate to use the film forming contain silicon to form film with gas after, the method that the gaseous plasmaization that contains fluorine is cleaned.
The application is based on the Japanese Patent Application 2008-111377 number opinion priority of on April 22nd, 2008 in Japanese publication.
Background technology
In the electronic equipment manufacturing process, has the operation of dielectric films such as forming silicon oxide layer, silicon nitride film mostly.The method that forms these dielectric films is used plasma CVD method (PECVD) mostly.In identical technology,, accumulate the solid, shaped deposit that is mainly film forming component in the chamber and in the discharge duct along with film forming is handled.
This solid, shaped deposit is necessary cleaning chamber inside and discharge duct owing to cause into unusual, the generation of particle of membrane stage, the obstruction of discharge duct according to accumulation thickness, film forming frequency.
As this clean method, be silicon tetrafluoride (SiF with solid, shaped deposit chemical change by active fluorine atom
4) dry cleaning that waits volatile fluorides and exhaust to remove extensively popularized.
In order to generate active fluorine atom, use the gas that has fluorine atom in the molecule, make tetrafluoromethane (CF usually
4), perfluoroethane (C
2F
6) wait the method (non-patent literature 1) of fluorine substituted compounds (PFC) plasmaization.
But these PFC gases are the gas (non-patent literature 2) that makes global warming.
In semiconductor industry, for these discharge rates that makes the material of global warming, to have proposed be benchmark with the nineteen ninety-five, reduced by 10% target (non-patent literature 3) to 2010.
As the clean method that reduces PFC gas discharge rate, applied for before the applicant using the so-called place of gas such as hydrogen fluorohydrocarbon gas that have hydrogen atom in the molecule to carry out the method for plasma treatment.
Should before in invention of application disclosed clean method be that the mist of oxygen-containing gass such as the place of gas that will contain hydrogen fluorohydrocarbon gases such as HFC-134a, pentafluoroethane and oxygen is used as Clean-gas, the method that cleans by plasma treatment.
Yet, when using this place of gas, usually since place of gas itself rerum natura or the mixed proportion relation of place of gas and oxygen, the discharge voltage during plasma treatment (Vpp) raises, or automatic bias (Vdc) is strong to the trend that minus side changes.
Discharge voltage refers to positive potential and the peak-to-peak voltage between the negative potential (peak to peak voltage) that is applied to interelectrode high frequency voltage, is the required voltage of plasma discharge.In addition, automatic bias refers to the voltage of 1/2 position of discharge voltage.
If compare with existence conditions, discharge voltage is high, and automatic bias is got big value at minus side, then when generating plasma, easily produces the plasma local anomaly discharge that is called as arcing (arcing).
The generation of arcing except being difficult to advance the plasma enhanced chemical reaction that is used to normally clean, also can make the various components damage in the chamber, and the lost of life causes film forming unusual.Therefore, be necessary to control plasma not produce arcing.
Preferred discharge voltage be with existing clean method in the equal value of value, in addition, preferably keep plasma so that automatic bias similarly also is not big negative potential.
Non-patent literature 1:Mocella, M.T.Mat.Res.Soc.Symp.Proc.447 (Environmental, Safety and Health Issues in IC Production), 29 (1997).
Non-patent literature 2:Ehhalt, D.; Prather, M.Intergovernmental Panel on ClimateChange (IPCC), Climate Change 2001:The Scientific Basis.AtmosphericChemistry and Greenhouse Gases (2001).
Non-patent literature 3: NEC information technology industry council, report are delivered, " the 9th time world half Guide body meeting Meetings (WSC) be To つ い て as a result " http://semicon.jeita.or.jp/docs/wsc.pdf (2005).
Summary of the invention
Thus, the objective of the invention is to, with the mist of hydrogen fluorohydrocarbon gas and oxygen as Clean-gas, when cleaning by plasma treatment, suppress arcing generation, do not damage the various parts in the chamber, it is unusual etc. not produce film forming.
In order to address the above problem, the present invention is the clean method of plasma film forming apparatus, and this method is the method for removing the deposit in the chamber that is deposited in the plasma CVD film formation device and the discharge duct,
In this method, use the ratio that contains hydrogen fluorohydrocarbon gas, oxygen and disassociation gas and disassociation property gas as the mist of the 5vol%～10vol% of hydrogen fluorohydrocarbon gas and amount of oxygen as Clean-gas, carry out plasma treatment.
Among the present invention, preferred hydrogen fluorohydrocarbon gas is pentafluoroethane gas.
In addition, preferably disassociation property gas for being selected from by CF
4, C
2F
6, C
3F
8, c-C
4F
8(ring-type C
4F
8), NF
3, N
2In the group that O constitutes more than one.
According to the present invention, by use the ratio that contains hydrogen fluorohydrocarbon gas, oxygen and disassociation gas and disassociation property gas as the mist of the 5vol%～10vol% of hydrogen fluorohydrocarbon gas and amount of oxygen as Clean-gas, when plasma treatment, discharge voltage is roughly the same when using existing Clean-gas, can excessively not raise, and automatic bias can not be big negative value yet.
Therefore, the generation that is called as the plasma local anomaly discharge of arcing is inhibited, and does not damage the various parts in the chamber, and it is unusual etc. can not produce film forming.
In addition, the discharge rate of the material of global warming is also reduced.
Description of drawings
Fig. 1 is the structure diagram of the example of the employed plasma processing apparatus of expression clean method of the present invention;
Fig. 2 is the result's of expression conventional example figure;
Fig. 3 is the result's of expression embodiment 1 figure;
Fig. 4 is the result's of expression embodiment 2 figure;
Fig. 5 is the result's of expression embodiment 3 figure;
Fig. 6 is the result's of expression comparative example 1 figure.
Symbol description
1 high frequency electric source, 2 plasma generation unit, 3 chambeies, 4 unstrpped gas ingress pipes, 5 first ingress pipes, 6 second ingress pipes, 7 the 3rd ingress pipes, 8 blast pipes, 9 exhaust pumps, 21 spray heads, 22 pedestals
Embodiment
Fig. 1 represents to be used to implement the example of the plasma CVD film formation device of clean method of the present invention.
The brief configuration of this plasma CVD film formation device comprises: comprise applying the plasma generation unit 2 that produces the parallel plate-type etc. of plasma from the high frequency power of high frequency electric source 1, be used on substrate, forming the chamber 3 of films such as silica at plasma atmosphere, in this chamber 3, import the unstrpped gas ingress pipe 4 of film forming with gas, the hydrogen fluorohydrocarbon gas that constitutes Clean-gas is sent to first ingress pipe 5 in the chamber 3, the oxygen that constitutes Clean-gas is sent to second ingress pipe 6 in the chamber 3, the disassociation gas that constitutes Clean-gas is sent to the 3rd ingress pipe 7 in the chamber 3, comprises the blast pipe 8 that the gases in the chamber 3 is carried out the exhaust pump 9 of exhaust.
Above-mentioned plasma generation unit 2 comprises and flows out film forming with gas and the spray head 21 of Clean-gas and the pedestal (susceptor) 22 of mounting substrate, is applied between spray head 21 and the pedestal 22 from the high frequency power of high frequency electric source 1.
Above-mentioned raw materials gas introduction tube 4, first ingress pipe 5, second ingress pipe 6 and the 3rd ingress pipe 7 are communicated with spray head 21, and film forming flows out to substrate from spray head 21 with gas and Clean-gas.
In the film forming of being undertaken by this film formation device, dispose substrates such as silicon substrate on the pedestal 22 in chamber 3, the unstrpped gas that will contain tetraethoxysilane, oxygen, nitrogen, ammonia etc. from unstrpped gas ingress pipe 4 imports in the chamber 3, flow out from spray head 21, make 2 work of plasma generation unit, be reflected at films such as forming oxide-film on the substrate by plasma CVD.Gas in the chamber 3 attracts by exhaust pump 9 and discharges from blast pipe 8.
In the cleaning of the inside of the chamber 3 of plasma CVD film formation device and blast pipe 8 thereof, be fed in the chamber 3 by mass flowmenter 10 from the hydrogen fluorohydrocarbon gas of first ingress pipe 5 ormal weight, be fed in the chamber 3 by mass flowmenter 11 from the oxygen of second ingress pipe 6, give disassociation property gas by mass flowmenter 12 from the 3rd ingress pipe 7 with ormal weight.
Then, between spray head 21 and pedestal 22, apply the high frequency power of regulation power, excite the clean air in the chamber 3, produce plasma by high frequency electric source 1.Keep the pressure ground of regulation that the gas in the chamber 3 is discharged by exhaust pump 9 attractions and from blast pipe 8.
As the Clean-gas that uses among the present invention, use the mist of hydrogen fluorohydrocarbon gas, oxygen and disassociation gas.
As hydrogen fluorohydrocarbon gas, use C
2H
xF
y(x=1,2, y=4,5), C
3H
xF
yThe part of the hydrogen atom of saturated lower hydrocarbon such as (x=1,2, y=6,7) is replaced one or more the mist in the fluorinated hydrocarbons gas form by fluorine atom, as preferred hydrogen fluorohydrocarbon, can enumerate C
2HF
5, C
3HF
7Deng.
These hydrogen fluorohydrocarbon gases are that acceptable concentration value height and global warming coefficient are less than C
2F
6Gas.
The mixed proportion of hydrogen fluorohydrocarbon gas and oxygen is according to volume ratio, with respect to 100 parts of hydrogen fluorohydrocarbon gases, oxygen is 400～900 parts, during less than 400 parts, the intramolecular carbon component of hydrogen fluorohydrocarbon forms the imperfect combustion state, and the active fluorine atom that passes through the reaction generation in the plasma atmosphere is insufficient.In addition, if exceed 900 parts, then discharge voltage (Vpp) obviously raises.
Disassociation property gas refers to the gas that has chemical bond in the molecule that contains 2 above atoms.As concrete disassociation gas, can enumerate for example C
2F
6(bond dissociation energy (C-C): 4.28eV), c-C
4F
8(bond dissociation energy (C-C): 2.26eV), NF
3(bond dissociation energy (N-F): the 2.63eV) mist of one or more in the grade, in addition, also can use C
3F
8(bond dissociation energy (C-C): 4.10eV), N
2O (bond dissociation energy (N-O): 1.73eV) etc.In these gases, the disassociation gas that has intramolecular bond dissociation energy and be the following chemical bond of 3eV is because easily disassociation and preferred especially of chemical bond.
As the gas in the category that is not included in this disassociation gas, rare gas such as argon, helium, neon are arranged.
The consumption of this disassociation gas with respect to the total amount of hydrogen fluorohydrocarbon gas and oxygen, according to volume ratio, is 5～10%.If the ratio of disassociation property gas then can not suppress the generation of arcing outside this scope.
Plasma discharge conditions during as clean for example is 3W/cm
2～6W/cm
2High frequency power, 300 ℃～500 ℃ temperature, the pressure of 4 holder (Torr)～10 holders, the total gas couette of 400sccm～1000sccm, but be not limited thereto scope, trial-and-error method is in fact by experiment stipulated.
In the clean method of the present invention, hydrogen fluorohydrocarbon gas in the Clean-gas and oxygen react in plasma atmosphere and generate active fluorine atom, this activity fluorine atom makes the gas shape compound that is converted into silicon tetrafluoride etc. attached to the solid, shaped deposit that contains Si oxide etc. of the internal face of chamber 3 and blast pipe 8, and is discharged to outside the system from blast pipe 8.
Think that utilize coexistence disassociation property gas, by more low-yield generation plasma, the high-energy component of the plasma of generation is few this moment, the current potential of plasma is neutral (0V).Estimate that in addition discharge voltage can not raise, automatic bias can not got negative high voltage yet.
Think that on the other hand if add excessive disassociation gas, then plasma electron density is low excessively,, change characteristic so that the energy of each electronics raises in order to continue plasma discharge.Prediction in addition, discharge voltage raises, and automatic bias is got negative high-voltage value, forms unsettled plasma.
Thus, by adding an amount of disassociation gas, suppress excessive rising of discharge voltage and automatic bias and also can not be big negative value, thereby prevent the generation of arcing.Therefore, the various parts in the chamber 3 can not sustain damage, and can not produce bad problems such as film forming is unusual.
[embodiment]
Below, the object lesson that comprises embodiment is described.
(conventional example)
(ア プ ラ イ De マ テ リ ア Le ズ society makes Precision5000 with the parallel plate-type plasma device to use the silicon oxide layer film forming of being undertaken by tetraethoxysilane (TEOS), 5 inches wafers), the clean-up performance in the chamber of being undertaken by the mist system as the perfluoroethane of the clean air of standard and oxygen is estimated.
In the state evaluation in the cleaning, assemble high-voltage probe in the RF waveguide in the lid of chamber, monitoring discharge voltage (Vpp) and automatic bias (Vdc).Cleaning is carried out after silicon oxide layer is grown to about 800nm.
Clean conditions is as follows.
High frequency applies power: 750W
Cavity pressure (high pressure cleaning): 3.5 holders
Cleaning time: 70sec
Substrate temperature: 400 ℃
Gas flow: perfluoroethane (C
2F
6) 500sccm+ oxygen 600sccm
Interelectrode distance: (1 Mill=10,999 Mills (mils)
-3Inch)
Vpp that measures in the cleaning and Vdc result are as shown in Figure 2.Vpp passes with about 500V, in addition, Vdc-2.5V～-pass in the 0.5V.
(embodiment 1)
Use contains the C as hydrogen fluorohydrocarbon gas
2HF
5, O
2With C as disassociation property gas
2F
6Mist as Clean-gas, carry out the state estimating of Vpp and Vdc.
With C
2HF
5With O
2Total flow be fixed as 600sccm, RF power is fixed as 750W, interelectrode distance is fixed as 999 Mills, makes C
2HF
5Concentration ([C
2HF
5]/[C
2HF
5+ O
2]) change in 10%～20%, pressure change in 3 holders～5 holders, the concentration of disassociation property gas ([disassociation property gas]/[C
2HF
5+ O
2]) change in 0～10%, design method is analyzed the condition dependence of each factor by experiment.The result as shown in Figure 3.
Among the figure of Fig. 3, the epimere of the longitudinal axis is discharge voltage Vpp, hypomere is automatic bias Vdc, the left side of transverse axis is the concentration (%) of hydrogen fluorohydrocarbon gas, the centre is the pressure (holder) in the chamber, the right side is the concentration (%) of disassociation property gas, and the variation of expression hydrogen fluorohydrocarbon gas concentration, pressure and disassociation gas concentration is to the influence of discharge voltage and automatic bias.The figure of Fig. 4～Fig. 6 is also identical therewith.
And the disassociation gas concentration of the transverse axis of the figure of Fig. 3～Fig. 6 is that 0% o'clock discharge voltage and automatic bias value is the value of applying for invention before that above-mentioned the applicant proposes.
Vpp is high more, Vdc is big more negative value, and then the arcing possibility increases.By the analysis result of Fig. 3 as can be known, the condition that increases in positive side of the lower and Vdc of Vpp is for adding 8.2% disassociation gas C
2F
6Condition.
The Vpp of this moment is 543V, and Vdc is+0.1V, with existing with C
2F
6Gas is compared as the clean method of Clean-gas, and the result is equal.At the flow that adds gas still less or under the more condition, Vpp is higher, Vdc also is low value more.
(embodiment 2)
By the method identical with embodiment 1, disassociation property gas uses c-C
4F
8The time mensuration.Analysis result as shown in Figure 4.In the case, the disassociation gas c-C of interpolation 6.9%
4F
8Condition be the minimum condition of arcing possibility.
The Vpp of this moment is 544V, and Vdc is+1.8V, with existing with C
2F
6Gas is compared as the clean method of Clean-gas, and the result is equal.
(embodiment 3)
By the method identical with embodiment 1, disassociation property gas uses NF
3The time mensuration.Analysis result as shown in Figure 5.In the case, the disassociation gas NF of interpolation 8.1%
3Condition also be the minimum condition of arcing possibility.
The Vpp of this moment is 489V, and Vdc is+4.7V, with existing with C
2F
6Gas is compared as the clean method of Clean-gas, also is the low result of arcing possibility.
(comparative example 1)
By the method identical, add c-C with embodiment 3
4F
8, oxygen and as the NF of disassociation property gas
3Mensuration when coming instead of hydrogen fluorohydrocarbon gas.Analysis result as shown in Figure 6.
In the case, the disassociation gas NF of interpolation 4.7%
3Condition also be the minimum condition of arcing possibility.But this moment, along with the flow increase of disassociation property gas, Vdc tends to get big negative value, finds the effect of disassociation property gas.
(comparative example 2)
By the method identical, carry out C with embodiment 1
2HF
5, oxygen and do not have mist that the helium (He) of disassociation property mixes as Clean-gas, the mensuration when implementing cleaning.
Measuring pressure fixing is 5 holders.Measurement result is as shown in table 1.
As shown in Table 1, when using the He that does not have disassociation property, Vpp is an increase trend, and Vdc is no change almost, can not get the effect that realizes by helium.
[table 1]
| Add concentration (%) | Discharge voltage (V) | Automatic bias (V) |
| 0 | 588 | -1.3 |
| 5 | 590 | -1.4 |
| 10 | 598 | -1.4 |
Claims (3)
1, a kind of clean method of plasma film forming apparatus, this method are the method for removing the deposit in the chamber that is deposited in the plasma CVD film formation device and the discharge duct, wherein,
Use the ratio that contains hydrogen fluorohydrocarbon gas, oxygen and disassociation gas and disassociation property gas as the mist of the 5vol%～10vol% of hydrogen fluorohydrocarbon gas and amount of oxygen as Clean-gas, carry out plasma treatment.
2, the clean method of plasma film forming apparatus according to claim 1, wherein, hydrogen fluorohydrocarbon gas is pentafluoroethane gas.
3, the clean method of plasma film forming apparatus according to claim 1 and 2, wherein, disassociation property gas is for being selected from by CF
4, C
2F
6, C
3F
8, c-C
4F
8, NF
3, N
2In the group that O constitutes more than one.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008111377 | 2008-04-22 | ||
| JP2008111377A JP5214316B2 (en) | 2008-04-22 | 2008-04-22 | Cleaning method of plasma film forming apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101567310A true CN101567310A (en) | 2009-10-28 |
Family
ID=41283414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009101337736A Pending CN101567310A (en) | 2008-04-22 | 2009-04-13 | Method for cleaning plasma film-forming device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5214316B2 (en) |
| CN (1) | CN101567310A (en) |
| TW (1) | TW201002857A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637133A (en) * | 2016-12-26 | 2017-05-10 | 苏州工业园区纳米产业技术研究院有限公司 | PECVD reaction cavity cleaning method and clean gas |
| CN112695299A (en) * | 2020-12-15 | 2021-04-23 | 长江先进存储产业创新中心有限责任公司 | Deposition apparatus and method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7055031B2 (en) | 2018-02-16 | 2022-04-15 | 東京エレクトロン株式会社 | Cleaning method and plasma processing equipment |
| KR102501472B1 (en) * | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3527915B2 (en) * | 2002-03-27 | 2004-05-17 | 株式会社ルネサステクノロジ | CVD apparatus and cleaning method of CVD apparatus using the same |
| JP2005142198A (en) * | 2003-11-04 | 2005-06-02 | Taiyo Nippon Sanso Corp | Cleaning gas and method |
| JP4531467B2 (en) * | 2004-07-07 | 2010-08-25 | 大陽日酸株式会社 | Cleaning method in chamber of semiconductor thin film forming apparatus |
-
2008
- 2008-04-22 JP JP2008111377A patent/JP5214316B2/en active Active
-
2009
- 2009-03-27 TW TW98110075A patent/TW201002857A/en unknown
- 2009-04-13 CN CNA2009101337736A patent/CN101567310A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106637133A (en) * | 2016-12-26 | 2017-05-10 | 苏州工业园区纳米产业技术研究院有限公司 | PECVD reaction cavity cleaning method and clean gas |
| CN112695299A (en) * | 2020-12-15 | 2021-04-23 | 长江先进存储产业创新中心有限责任公司 | Deposition apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5214316B2 (en) | 2013-06-19 |
| TW201002857A (en) | 2010-01-16 |
| JP2009266884A (en) | 2009-11-12 |
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Open date: 20091028 |