CN101562224B - Light source device and manufacturing method thereof - Google Patents
Light source device and manufacturing method thereof Download PDFInfo
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- CN101562224B CN101562224B CN2009101070585A CN200910107058A CN101562224B CN 101562224 B CN101562224 B CN 101562224B CN 2009101070585 A CN2009101070585 A CN 2009101070585A CN 200910107058 A CN200910107058 A CN 200910107058A CN 101562224 B CN101562224 B CN 101562224B
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Abstract
The present invention is applicable to the field of illumination and provides a light source device and a manufacturing method thereof. The manufacturing method comprises the following steps of: firstly providing a substrate which comprises a light-emitting element area and a peripheral area positioned at the periphery of the light-emitting element area; then forming a nano island-shaped pattern layer; and then, forming a light-emitting element at the light-emitting element area of the substrate. The light-emitting element emits a light ray, and part of the light ray is transmitted in the substrate, while the nano island-shaped pattern layer leads the light ray transmitted in the substrate to be emitted towards the outside of the substrate. The manufacturing method can manufacture the light source device with high brightness and large light-emitting area, and has low cost and simple manufacturing and the like.
Description
Technical field
The invention belongs to lighting field, relate in particular to a kind of light supply apparatus and preparation method thereof.
Background technology
Flourish along with green science and technology, have that power saving, volume are little, electroluminescent diode (the Electro-luminance light emitting diode of low voltage drive and advantage such as not mercurous, EL-LED), fields such as the module backlight of flat-panel screens and general lighting have been widely used in.Yet electroluminescent diode still faces some problems, mainly is that the conversion efficiency between electric energy-luminous energy is low, and most of light that electroluminescent diode is launched can be limited in the substrate of assembly.
In general electroluminescent diode, its external efficiencies (η ex) can be drawn efficient two factors such as (η ext) by internal quantum (η in) and light and represents, that is:
ηex＝ηin·ηext
Wherein, (η in) is relevant with the electric current injection efficiency for internal quantum, and the material that the luminescent layer of electric current injection efficiency and electroluminescent diode, electrode layer etc. use is relevant.The internal quantum (η in) of general electroluminescent diode can reach more than 70%, and further the space of improving is less.
In addition, light draws the height of efficient (η ext), is to depend on whether light that electroluminescent diode is launched can shine the outside of electroluminescent diode effectively.Be subject to total reflection principle (total internal reflection), the light that known electroluminescent diode is launched can be limited within the substrate and optical waveguide layer of electroluminescent diode.That is to say that the light of being launched by the luminescent layer of electroluminescent diode must be less than the critical angle (critical angle) of substrate and optical waveguide layer, just may leave electroluminescent diode and enter in the air.Generally speaking, the light of known electroluminescent diode draws efficient (η ext) and has only about tens percent (about 10%～18%).Therefore, it is considerably big that light draws the space that efficient (η ext) can improve, and many researchers all drop into the research that many mental and physical efforts are correlated with to this.
Known raising light draws the method for efficient (η ext), mainly be between the substrate of electroluminescent diode and optical waveguide layer, to make microstructure (micro-structure), make the light scatter that is limited in the substrate in air by the total reflection mechanism of destroying light.The zigzag texture structure (sawtooth texture structure) of employing, lenticule (microlens) are arranged in the relevant research, or pyramid microstructures such as (micro-pyrimid).
In addition, subwavelength structure (sub-wavelength structure) (being photonic crystal) at the surperficial fabrication cycle of electroluminescent diode is also arranged, the triangular form of employing lattice is arranged in the relevant research, or 2 D photon crystal such as square lattice, so that the leaded light mode in the high-index material (guided mode) is coupled as bright dipping mode (air mode).
Some practices are also arranged recently for utilizing nanometer metal structure.Because nanometer metal structure has the characteristic of high optical scattering efficient,, make the substrate that is bound in electroluminescent diode or the light scatter in the optical waveguide layer in air so can destroy total reflection mechanism.There is employing on the substrate of electroluminescent diode, to make the method for nano metal line in the relevant research; Or U.S. Patent Publication No. US 2006/0273327 A1, the method for being mentioned among the US2007/0120136 etc. of in electroluminescent diode, making the nano metal grating.
Because the size quite little (tens of～hundreds of nanometers) of nanometer metal structure, so nanometer metal structure with respect to previous transparent microstructure, can be more equably draws out from the substrate of electroluminescent diode or optical waveguide layer with light.Yet, in the method for above-mentioned making nanometer metal structure (nano metal line, nano metal grating), must adopt expensive little shadow technology of electron beam and the high dry-etching machine of precision, with the pattern transfer of Electron Beam Fabrication to the substrate of electroluminescent diode.This method not only cost height, speed is slow, and is not suitable for large-area manufacturing and volume production.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of light supply apparatus, be intended to solve that prior art is made nanometer metal structure cost height, speed is slow, and be not suitable for the problem of large-area manufacturing and volume production.
Another object of the present invention is to provide a kind of light supply apparatus, utilize the manufacture method of above-mentioned light supply apparatus, produce and have the light supply apparatus that high light draws efficient (η ext).
Based on above-mentioned, the present invention proposes a kind of manufacture method of light supply apparatus, and described method comprises: at first, provide a substrate, it comprises a light-emitting component district and is positioned at a surrounding zone on every side, light-emitting component district; Then, form a nanometer island-shaped pattern layer above substrate, the step that forms described nanometer island-shaped pattern layer comprises: form a layer of nanomaterial on described substrate; And heat described layer of nanomaterial, so that described layer of nanomaterial produces the profit effect of drying, and form a plurality of nanometer islands that aperiodicity ground is arranged; Then, form a light-emitting component in the light-emitting component district of substrate, wherein, light-emitting component is launched light, and part light transmits in substrate, and nanometer island-shaped pattern layer makes the outside outgoing to substrate of the light that transmits in substrate.
In one embodiment of this invention, the time of above-mentioned heating layer of nanomaterial is 10 minutes～60 minutes.
In one embodiment of this invention, the temperature of above-mentioned heating layer of nanomaterial is 200 ℃～400 ℃.
In one embodiment of this invention, the above-mentioned method that forms layer of nanomaterial on substrate comprises sputtering method.
In one embodiment of this invention, the thickness of above-mentioned layer of nanomaterial is 1 nanometer～20 nanometers.
In one embodiment of this invention, above-mentioned before forming layer of nanomaterial on the substrate, described method also comprises: one first electrode layer that forms light-emitting component on substrate earlier.
In one embodiment of this invention, above-mentioned nanometer island-shaped pattern floor is formed at the light-emitting component district of substrate.
In one embodiment of this invention, above-mentioned nanometer island-shaped pattern layer is formed at the surrounding zone of substrate.
In one embodiment of this invention, the material of above-mentioned nanometer island-shaped pattern layer comprises metal, and above-mentioned metal is to be selected from gold, silver, nickel, iron and combination thereof.
The invention allows for a kind of light supply apparatus, comprise substrate, nanometer island-shaped pattern layer and light-emitting component, substrate comprises a light-emitting component district and is positioned at a surrounding zone on every side, light-emitting component district, nanometer island-shaped pattern layer is disposed at the substrate top, light-emitting component is arranged at the light-emitting component district, wherein, light-emitting component is launched light, and part light transmits in substrate, nanometer island-shaped pattern layer makes the outside outgoing to substrate of the light that transmits in substrate, wherein, the step that forms described nanometer island-shaped pattern layer comprises: form a layer of nanomaterial on described substrate; And heat described layer of nanomaterial, so that described layer of nanomaterial produces the profit effect of drying, and form a plurality of nanometer islands that aperiodicity ground is arranged.
In one embodiment of this invention, above-mentioned nanometer island-shaped pattern layer comprises a plurality of nanometer islands that aperiodicity ground is arranged.
In one embodiment of this invention, above-mentioned nanometer island-shaped pattern floor is arranged at the light-emitting component district of substrate.
In one embodiment of this invention, above-mentioned nanometer island-shaped pattern layer is arranged at the surrounding zone of substrate.
In one embodiment of this invention, the material of above-mentioned nanometer island-shaped pattern layer comprises metal, and above-mentioned metal is to be selected from gold, silver, nickel, iron and combination thereof.
In one embodiment of this invention, the thickness of above-mentioned nanometer island-shaped pattern layer is between 1 nanometer～20 nanometers.
In one embodiment of this invention, above-mentioned light-emitting component comprises first electrode, luminescent layer and second electrode, and first electrode is disposed on the substrate, and luminescent layer is disposed at the top of first electrode, and second electrode is disposed at the top of luminescent layer.
In one embodiment of this invention, the material of above-mentioned first electrode comprises indium tin oxide or indium-zinc oxide.
In one embodiment of this invention, the material of above-mentioned second electrode comprises metal.
In one embodiment of this invention, light supply apparatus also comprises a hole transmission layer, is arranged between first electrode and the luminescent layer, and the material of this hole transmission layer comprises N, N '-two (1-naphthyl)-N, N ' two-(phenyl)-benzidine (NPB).
In one embodiment of this invention, light supply apparatus also comprises an electron transfer layer, is arranged between the luminescent layer and second electrode, and the material of this electron transfer layer comprises three (oxine) aluminium (AlQ3).
In one embodiment of this invention, the material of above-mentioned luminescent layer comprises the mixed luminescence material through three (oxine) aluminium (AlQ3) that mixes.
The manufacture method of light supply apparatus of the present invention, because when utilizing the heating layer of nanomaterial, layer of nanomaterial can produce the method for drying the profit effect and forming nanometer island-shaped pattern layer automatically, by this method can be simply, fast and large tracts of land evenly make and be used to improve the nanometer island-shaped pattern layer that light draws efficient.Light supply apparatus with this nanometer island-shaped pattern layer can be coupled out the light in the substrate internal transmission of light supply apparatus well.With respect to known electroluminescent diode, the whole lighting efficiency of light supply apparatus of the present invention can promote about about 70%.
Description of drawings
Figure 1A～Fig. 1 D is the making schematic flow sheet of the manufacture method of a kind of light supply apparatus of providing of preferred embodiment of the present invention;
Fig. 2 A～Fig. 2 B is the making schematic flow sheet of a kind of nanometer island-shaped pattern layer of providing of preferred embodiment of the present invention;
Fig. 3 A～Fig. 3 D be the nanometer island-shaped pattern layer that provides of preferred embodiment of the present invention in heating process, the electron micrograph figure under different time;
Fig. 4 is the schematic diagram of the another kind of light supply apparatus that provides of preferred embodiment of the present invention;
Fig. 5 is the curve chart of the light supply apparatus of Fig. 4 of providing of the embodiment of the invention in the forward luminous intensity of diverse location;
Fig. 6 is the curve chart of light scattering efficiency of the nano particle of the unlike material that provides of the embodiment of the invention;
Fig. 7 is the schematic diagram of the luminous intensity of nanometer island-shaped pattern layer under different-thickness that provide of the embodiment of the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
In embodiments of the present invention, by a substrate is provided, it comprises a light-emitting component district and is positioned at a surrounding zone on every side, light-emitting component district, above substrate, form a nanometer island-shaped pattern layer, form a light-emitting component in the light-emitting component district of substrate and made a kind of light supply apparatus, but this light supply apparatus has low cost, simple, the high light of making draws the advantage that the efficient large tracts of land is evenly made nanometer metal structure.
Introduce manufacture method and this light supply apparatus of the light supply apparatus that the embodiment of the invention provides below respectively in detail.
One, the manufacture method of light supply apparatus
The making schematic flow sheet of the manufacture method of a kind of light supply apparatus that Figure 1A～Fig. 1 D provides for preferred embodiment of the present invention.At first, please refer to Figure 1A, a substrate 110 is provided, this substrate 110 comprises a light-emitting component district 110a, and is positioned at the surrounding zone 110b around the light-emitting component district 110a.The material of this substrate 110 can be glass, quartz or any can resistant to elevated temperatures transparent material.
Then, please above substrate 110, form a nanometer island-shaped pattern layer 120 simultaneously with reference to Figure 1B and Fig. 1 C.Shown in Figure 1B, before forming nanometer island-shaped pattern layer 120 on the substrate 110, can on substrate 110, form the first electrode layer 130a of follow-up light-emitting component 130 (being illustrated among Fig. 1 D) earlier.After forming the first electrode layer 130a, continue again on this first electrode layer 130a, to form nanometer island-shaped pattern layer 120, shown in Fig. 1 C.The method that forms this first electrode layer 130a for example is a sputtering method, and the material of the first electrode 130a comprises indium tin oxide or indium-zinc oxide.Certainly, nanometer island-shaped pattern layer 120 also is formed directly on the substrate 110, and the present invention does not limit nanometer island-shaped pattern layer 120 and must be formed on the first electrode layer 130a.
Please continue the C with reference to Fig. 1, nanometer island-shaped pattern layer 120 can be formed at the surrounding zone 110b of substrate 110.Certainly, nanometer island-shaped pattern floor 120 also can be formed at the light-emitting component district 110a (as shown in Figure 4) of substrate 110, or is formed at the light-emitting component district 110a and the surrounding zone 110b (scheming not shown) of substrate 110 simultaneously.In addition, the material of nanometer island-shaped pattern layer 120 comprises metal.When using metal as the material of nanometer island-shaped pattern layer 120, metal can be selected from gold, silver, nickel, iron and combination thereof.
Below will describe the making flow process of the nanometer island-shaped pattern layer 120 that the embodiment of the invention provides in detail.The making schematic flow sheet of a kind of nanometer island-shaped pattern layer that Fig. 2 A～Fig. 2 B provides for preferred embodiment of the present invention.In embodiments of the present invention, be to describe directly on substrate 110, to make nanometer island-shaped pattern layer 120, certainly, also can on the first above-mentioned electrode layer 130a, carry out similar processing procedure.
At first, please refer to Fig. 2 A, on substrate 110, form a layer of nanomaterial 120a.The method that forms layer of nanomaterial 120a on substrate 110 comprises sputtering method.Can control the thickness of layer of nanomaterial 120a by the processing procedure time of control sputtering method, the thickness of layer of nanomaterial 120a is preferably 1 nanometer～20 nanometers.It should be noted that visual demand forms large-area layer of nanomaterial 120a on substrate 110, be beneficial to form in the follow-up heating processing large-area nanometer island-shaped pattern layer 120.
Then, please refer to Fig. 2 B, heating layer of nanomaterial 120a so that layer of nanomaterial 120a produces the profit effect of drying, and forms a plurality of nanometer island 120b that aperiodicity ground is arranged.Promptly constitute above-mentioned nanometer island-shaped pattern layer 120 by these nanometer islands 120b.The time of above-mentioned heating layer of nanomaterial 120a is preferably 10 minutes～and 60 minutes.And the temperature of heating layer of nanomaterial 120a is preferably 200 ℃～400 ℃.
It should be noted that, the THICKNESS CONTROL of layer of nanomaterial 120a is quite important, when layer of nanomaterial 120a is heated, the profit effect of can successfully drying of the layer of nanomaterial 120a with suitable thickness (being above-mentioned 1 nanometer～20 nanometers), and form a plurality of nanometer island 120b.
The nanometer island-shaped pattern layer that Fig. 3 A～Fig. 3 D provides for preferred embodiment of the present invention in heating process, the electron micrograph figure under different time.Please earlier with reference to Fig. 3 A～3B, in heating process, make the heat energy of atom of layer of nanomaterial 120a increase.Because the tack between layer of nanomaterial 120a and the substrate 110 (shown in Fig. 2 B) is not enough to support this disturbance heat energy, is reducing can to cause layer of nanomaterial 120a to split under the physical action mechanism of surface energy.To the end, shown in Fig. 3 C and Fig. 3 D, layer of nanomaterial 120a can split, and is condensed into a plurality of no periodic array and the irregular nanometer island of external form 120b, the mechanism of promptly utilizing profit (dewetting) effect of drying to make nanometer island-shaped pattern layer 120.
From the above, a plurality of nanometer island 120b of the aperiodicity of embodiment of the invention ground arrangement can be the irregular islands because of the spontaneous shaping of atom cohesive force.Have periodically and the nano metal line and the nano metal grating of regular pattern with respect to known, nanometer island-shaped pattern layer 120 of the present invention need not adopt high processing procedure of precision and equipment to make the nanometer metal structure of special kenel, has advantages such as cost is low, processing procedure is simple.
Please continue D with reference to Fig. 1,110a forms a light-emitting component 130 in the light-emitting component district of substrate 110, wherein, light-emitting component 130 launches light L and part light L transmits in substrate 110, and nanometer island-shaped pattern layer 120 makes the outside outgoing of the light L of transmission in substrate 110 to substrate 110.So far, finish the making of light supply apparatus 100.
Particularly, because the embodiment of the invention can form large-area nanometer island-shaped pattern layer 120 on substrate 110, so quite be suitable for making light supply apparatus 100 with large tracts of land and high brightness.In more detail, above-mentioned light supply apparatus 100 can be applied in the making of module backlight of large scale flat-panel screens.In addition, because the manufacturing process of nanometer island-shaped pattern layer 120 is quite simple, make the present invention have higher production efficiency and cost advantage.Below will go on to say the detailed construction of light supply apparatus 100.
Two, light supply apparatus
Please continue the D with reference to Fig. 1, this light supply apparatus 100 comprises substrate 110, nanometer island-shaped pattern layer 120 and light-emitting component 130.Substrate 110 comprises a light-emitting component district 110a and is positioned at a light-emitting component district 110a surrounding zone 110b on every side.Nanometer island-shaped pattern layer 120 is disposed at substrate 110 tops.Light-emitting component 130 is arranged at light-emitting component district 110a, and wherein, light-emitting component 130 is launched light L, and part light L transmits in substrate 110, and nanometer island-shaped pattern layer 120 makes the outside outgoing of the light L of transmission in substrate 110 to substrate 110.
Please continue the D with reference to Fig. 1, light-emitting component 130 for example is an electroluminescent diode.Light-emitting component 130 comprises the first electrode 130a, luminescent layer 130b and the second electrode 130c.The first electrode 130a is disposed on the substrate 110.Luminescent layer 130b is disposed at the top of the first electrode 130a.The second electrode 130c is disposed at the top of luminescent layer 130b.The material of the first electrode 130a comprises indium tin oxide or indium-zinc oxide.The material of the second electrode 130c comprises metal.
By Fig. 1 D as can be known, the first electrode 130a and the second electrode 130c are connected respectively to positive pole (+) and negative pole (-), so the first electrode 130a provides hole (scheming not shown), the second electrode 130c provides electronics (scheming not shown).Electronics and hole promptly form the outside that photon (scheming not shown) shines light-emitting component 130 after luminescent layer 130b combines.
In addition, light-emitting component 130 can further comprise a hole transmission layer 130d, is arranged between the first electrode 130a and the luminescent layer 130b, and the material of this hole transmission layer 130d can be N, N '-two (1-naphthyl)-N, N ' two-(phenyl)-benzidine (NPB).In addition, light-emitting component 130 also may further include an electron transfer layer 130e, is arranged between the luminescent layer 130b and the second electrode 130c.The material of this electron transfer layer 130e can be three (oxine) aluminium (AlQ3).Thus, can promote electronics and the hole efficiency of transmission in light-emitting component 130, further promote the luminous efficiency of light-emitting component 130.
In addition, the material of luminescent layer 130b can be the mixed luminescence material through three (oxine) aluminium (AlQ3) that mixes, just can give the function of luminescent layer 130b electron transfer layer 130e, and need not to make in addition electron transfer layer 130e to reduce the thickness of light-emitting component 130 integral body.
Above-mentioned light-emitting component 130 only is example with the electroluminescent diode, and in fact, light-emitting component 130 can also be light-emitting component, cold cathode fluorescent lamp or any light-emitting component that can be luminous that adopts quantum well.Do not limited the kind of light-emitting component 130 at this.
It should be noted that please be simultaneously with reference to Fig. 2 B and Fig. 3 D, and nanometer island-shaped pattern layer 120 comprises a plurality of nanometer island 120b that aperiodicity ground is arranged.Because these nanometer islands 120b arranges randomly, so can further promote the efficient that the light L that sent for light-emitting component 130 carries out scattering.In addition, the method for making these nanometer islands 120b is quite simple, has been set forth in the related content of Fig. 2 A～Fig. 2 B, Fig. 3 A～Fig. 3 D, and therefore, this light supply apparatus 100 is volume production quite easily.
The optical demands that also can cooperate light supply apparatus 100 is carried out the conversion that the position is set of nanometer island-shaped pattern layer 120.The schematic diagram of the another kind of light supply apparatus that Fig. 4 provides for preferred embodiment of the present invention.Please refer to Fig. 4, this light supply apparatus 100a is similar with the light supply apparatus 100 shown in Fig. 1 D, and the two main difference is: nanometer island-shaped pattern floor 120 as shown in Figure 4 is the light-emitting component district 110a that are arranged at substrate 110; And the nanometer island-shaped pattern layer 120 shown in Fig. 1 D is the surrounding zone 110b that are arranged at substrate 110.Certainly, also can form nanometer island-shaped pattern floor 120 (scheming not shown) in the light-emitting component district 110a and the surrounding zone 110b of substrate 110 simultaneously.In addition, nanometer island-shaped pattern layer 120 also is not limited in the structure that is arranged on light-emitting component 130, also can be arranged on the surface (scheming not shown) of light-emitting component 130.
This nanometer island-shaped pattern layer 120 has quite high light scattering ability, can destroy the total reflection phenomenon that light L is carried out in substrate 110, and reduces the ratio that is bound in the light L in the substrate 110.The light supply apparatus of Fig. 4 that Fig. 5 provides for the embodiment of the invention is at the curve chart of the forward luminous intensity of diverse location.Please also refer to Fig. 4 and Fig. 5, clearly, at the light-emitting component district of light supply apparatus 100a 110a, the luminous intensity of light L promotes quite a lot of.In addition, (position is about 1～1.75mm at the intersection of light-emitting component district 110a and surrounding zone 110b; And the position is about 3.25～4.0mm) distribution of nanometer island-shaped pattern layer 120 of part is also arranged, so this place also can produce extra luminous intensity.
Generally be not provided with in the light supply apparatus (scheming not shown) of nanometer island-shaped pattern layer 120, light (scheming not shown) can be subject to total reflection, and lower luminous intensity is arranged; But utilize nanometer island-shaped pattern floor 120 is set on light-emitting component district 110a, can effectively the light L that is strapped in the substrate 110 be taken out.In other words, the light that this nanometer island-shaped pattern layer 120 can improve light supply apparatus 100,100a draws efficient (η ext), to increase the amount of light of the light L that is derived substrate 110.
The material of above-mentioned nanometer island-shaped pattern layer 120 is selected quite important.The curve chart of the light scattering efficiency of the nano particle of the unlike material that Fig. 6 provides for the embodiment of the invention.If with the nanosphere is example, light scattering efficiency can be assessed by the formula of the long-pending Csca (ω) of following scattering section:
Wherein, r is that radius, the λ of nanosphere is real part (real part), the ε of the dielectric coefficient ε p that incident light wavelength, ε m are the dielectric coefficient (=1) of air, dielectric coefficient that ε p is nanosphere, ε ' p is nanosphere " p is the imaginary part (imaginary part) of the dielectric coefficient ε p of nanosphere; and ω is 2 π f, and f is a light frequency.
Size and shape of the value of ε p and incident light wavelength, nanosphere etc. is relevant.Fig. 6 is to be example with gold nano ball (Au nano-particle) and silica nanosphere (SiO2 nano-particle), utilize above-mentioned scattering section to amass formula, when the incident light wavelength was 550nm, it was long-pending to calculate gold nano ball and the silica nanosphere scattering section under different size respectively.
As shown in Figure 6, the light scattering efficiency of gold nano ball (Au nano-particle) is bigger by 100～1 than the light scattering efficiency of silica nanosphere (SiO2 nano-particle), 000 times.Hence one can see that, and the gold nano ball is a kind of very strong light scattering structure, can more equably light L be drawn out from substrate 110.That is, when selecting metal for use, can more effectively promote light scattering efficiency as the material of nanometer island-shaped pattern layer 120.The material of nanometer island-shaped pattern layer 120 is preferably metal.Metal can be to be selected from gold, silver, nickel, iron and combination thereof.
The schematic diagram of the luminous intensity of island-shaped pattern layer under different-thickness that Fig. 7 provides for the nanometer embodiment of the invention.Please refer to Fig. 7, adopted two kinds of materials such as gold, silver to carry out the making of nanometer island-shaped pattern layer 120, wherein, abscissa is represented the thickness of nanometer island-shaped pattern layer 120, and ordinate is represented the luminous intensity of light supply apparatus 100,100a.As seen from Figure 7, when the preferred thickness of nanometer island-shaped pattern layer 120 between 1 nanometer～20 nanometers, light supply apparatus 100,100a can have preferable luminous intensity.
Please continue with reference to Fig. 7, when the thickness of nanometer island-shaped pattern layer 120 is 0, when just not having nanometer island-shaped pattern layer 120, the luminous intensity of the light supply apparatus (not illustrating) of this moment is about 0.05.With this numerical value as radix (promptly 0.05), how many luminous intensities are the luminous intensity that relatively has light supply apparatus 100, the 100a of the nanometer island-shaped pattern layer 120 of different-thickness promoted with respect to this radix (promptly 0.05), can calculate the increase percentage of luminous efficiency.
In more detail, will have the light supply apparatus 100 of the nanometer island-shaped pattern layer 120 of different-thickness, the luminous intensity of 100a deducts 0.05, again divided by 0.05 and be multiplied by 100 after, i.e. the increase percentage of luminous efficiency.For example, when the nanometer island-shaped pattern layer 120 that uses golden material to make and thickness were 2 nanometers, its luminous intensity was about 0.09, and the increase percentage that can calculate its luminous efficiency is: (0.09-0.05) ÷ 0.05 * 100%=80%.
As shown in Figure 7, compare the light supply apparatus that nanometer island-shaped pattern layer 120 is not set, generally, have the light supply apparatus 100 of nanometer island-shaped pattern layer 120, the luminous efficiency of 100a has increased about about 70%, this numerical value utilizes complicated technology such as two-dimensional photon crystal structure, nano metal line and nano metal grating suitable with known, but the nanometer island-shaped pattern layer 120 of the embodiment of the invention structurally with processing procedure on all come relatively easily and make things convenient for many.
In sum, light supply apparatus of the present invention and manufacture method thereof have the following advantages:
Light supply apparatus has nanometer island-shaped pattern layer, can destroy light in substrate total reflection mechanism and make light to the outside outgoing of substrate, draw efficient and high brightness so have higher light.In addition, the making of nanometer island-shaped pattern layer is quite simple, fast and be suitable for large-area making.In addition, a plurality of nanometer islands of formed no periodic array also can promote light scatter efficient.Particularly, the manufacture method of light supply apparatus of the present invention, when making nanometer island-shaped pattern layer, need not adopt the expensive little shadow technology of electron beam, also need not cooperate accurate dry ecthing procedure with the pattern transfer of Electron Beam Fabrication to substrate, so can significantly save cost, simplify manufacturing process to promote competitiveness.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all interior any modifications of doing in the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included in protection scope of the present invention in.
Claims (9)
1. the manufacture method of a light supply apparatus is characterized in that, described method comprises:
One substrate is provided, and described substrate comprises a light-emitting component district and is positioned at a surrounding zone on every side, described light-emitting component district;
Above described substrate, form a nanometer island-shaped pattern layer; And
Described light-emitting component district at described substrate forms a light-emitting component;
Wherein, described light-emitting component launches a light and the described light of part transmits in described substrate, and described nanometer island-shaped pattern layer makes the outside outgoing to described substrate of the light that transmits in described substrate;
The step that forms described nanometer island-shaped pattern layer comprises:
On described substrate, form a layer of nanomaterial; And
Heat described layer of nanomaterial,, and form a plurality of nanometer islands that aperiodicity ground is arranged so that described layer of nanomaterial produces the profit effect of drying.
2. the manufacture method of light supply apparatus as claimed in claim 1, it is characterized in that, the time of heating described layer of nanomaterial is 10 minutes～60 minutes, temperature is 200 ℃～400 ℃, the method that forms described layer of nanomaterial on the described substrate comprises sputtering method, and the thickness of described layer of nanomaterial is 1 nanometer～20 nanometers.
3. the manufacture method of light supply apparatus as claimed in claim 1 is characterized in that, before forming the step of a described layer of nanomaterial on the described substrate, described method also comprises: one first electrode layer that forms described light-emitting component on described substrate earlier.
4. the manufacture method of light supply apparatus as claimed in claim 1, it is characterized in that, described nanometer island-shaped pattern floor is formed at the described light-emitting component district of described substrate or is formed at the described surrounding zone of described substrate, the material of described nanometer island-shaped pattern layer comprises metal, and described metal is to be selected from gold, silver, nickel, iron and combination thereof.
5. a light supply apparatus is characterized in that, described light supply apparatus comprises:
One substrate has a light-emitting component district and is positioned at a surrounding zone on every side, described light-emitting component district;
One nanometer island-shaped pattern layer is disposed at described substrate top; And
One light-emitting component is arranged at described light-emitting component district;
Wherein, described light-emitting component launches a light and the described light of part transmits in described substrate, and described nanometer island-shaped pattern layer makes the outside outgoing to described substrate of the light that transmits in described substrate;
The step that forms described nanometer island-shaped pattern layer comprises:
On described substrate, form a layer of nanomaterial; And
Heat described layer of nanomaterial,, and form a plurality of nanometer islands that aperiodicity ground is arranged so that described layer of nanomaterial produces the profit effect of drying.
6. light supply apparatus as claimed in claim 5, it is characterized in that, described nanometer island-shaped pattern layer comprises a plurality of nanometer islands that aperiodicity ground is arranged, described nanometer island-shaped pattern floor is arranged at the described light-emitting component district of described substrate or the described surrounding zone of described substrate, the material of described nanometer island-shaped pattern layer comprises metal, described metal is to be selected from gold, silver, nickel, iron and combination thereof, and the thickness of described nanometer island-shaped pattern layer is between 1 nanometer～20 nanometers.
7. as claim 5 a described light supply apparatus, wherein said light-emitting component comprises:
One first electrode is disposed on the described substrate;
One luminescent layer is disposed at the top of described first electrode; And
One second electrode is disposed at the top of described luminescent layer.
8. as claim 7 a described light supply apparatus, it is characterized in that, the material of described first electrode comprises indium tin oxide or indium-zinc oxide, and the material of described second electrode comprises metal, and the material of described luminescent layer comprises the mixed luminescence material through three (oxine) aluminium (AlQ3) that mixes.
9. as claim 8 a described light supply apparatus, it is characterized in that, described light supply apparatus also comprises a hole transmission layer, be arranged between described first electrode and the described luminescent layer, the material of described hole transmission layer comprises N, N '-two (1-naphthyl)-N, N ' two-(phenyl)-benzidine (NPB); Perhaps described light supply apparatus also comprises an electron transfer layer, is arranged between described luminescent layer and described second electrode, and the material of described electron transfer layer comprises three (oxine) aluminium (AlQ3).
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| CN1781339A (en) * | 2003-03-25 | 2006-05-31 | 国立大学法人京都大学 | Light-emitting device and organic electroluminescence light-emitting device |
| CN1846316A (en) * | 2003-08-29 | 2006-10-11 | 奥斯兰姆奥普托半导体有限责任公司 | Thin-layer light-emitting diode chip and method for the production thereof |
| CN101162748A (en) * | 2006-10-13 | 2008-04-16 | 杭州士兰明芯科技有限公司 | Method for improving luminance brightness of chip at the axial direction |
| JP2008159980A (en) * | 2006-12-26 | 2008-07-10 | Kyocera Corp | Light-emitting element and lighting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1781339A (en) * | 2003-03-25 | 2006-05-31 | 国立大学法人京都大学 | Light-emitting device and organic electroluminescence light-emitting device |
| CN1846316A (en) * | 2003-08-29 | 2006-10-11 | 奥斯兰姆奥普托半导体有限责任公司 | Thin-layer light-emitting diode chip and method for the production thereof |
| CN101162748A (en) * | 2006-10-13 | 2008-04-16 | 杭州士兰明芯科技有限公司 | Method for improving luminance brightness of chip at the axial direction |
| JP2008159980A (en) * | 2006-12-26 | 2008-07-10 | Kyocera Corp | Light-emitting element and lighting device |
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