CN101562196A - Multi-source common-drain thin-film transistor and preparation method thereof - Google Patents
Multi-source common-drain thin-film transistor and preparation method thereof Download PDFInfo
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- CN101562196A CN101562196A CNA200910052040XA CN200910052040A CN101562196A CN 101562196 A CN101562196 A CN 101562196A CN A200910052040X A CNA200910052040X A CN A200910052040XA CN 200910052040 A CN200910052040 A CN 200910052040A CN 101562196 A CN101562196 A CN 101562196A
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Abstract
The invention discloses a multi-source common-drain thin-film transistor and a preparation method thereof. The invention adopts the technical proposal that the transistor comprises a glass substrate, a grid layer which is positioned on the substrate, a grid insulating layer which is positioned on the grid layer, and an active layer which is positioned on the grid insulating layer, wherein a drain electrode and at least two source electrodes are arranged on the active layer; and channels are arranged between the drain electrode and the source electrodes respectively, and the length of the channels is between 20 and 30 mu m. The transistor is provided with at least two source electrodes, so that the working current ID is at least two times of that of the prior transistor under the condition of the application of the same source-drain voltage. The preparation method has strong controllability, can make the prepared transistor have large drive current, is compatible with the prior process, and is favorable for large-scale production.
Description
Technical field
The present invention relates to a kind of thin-film transistor and make the method for this thin-film transistor.
Background technology
Flat panel display progressively becomes the pillar industry of China, novel flat-plate demonstration at present mainly contains: thin-film transistor (Thin FilmTransistor, TFT) liquid crystal display (Liquid Crystal Display, LCD), Plasma Display (Plasma DisplayPanel, PDP), organic light emitting display (Organic Light-Emitting Diode, OLED).Because OLED is being better than LCD on a lot of performances, therefore might catch up from behind fully, participate in the main flow industry of flat panel display and go.
Thin-film transistor has obtained promotion and application very widely from the invention beginning sixties in last century, development speed beyond imagination soon.From the non-crystalline silicon tft to the multi-crystal TFT, from high temperature polysilicon TFT to low temperature polycrystalline silicon TFT, and oxide TFT, technology is more and more ripe.The object of using be also from driving LCD, develop into both can drive LCD also can driving OLED, even Electronic Paper.
This luminous demonstration is the current drives type, and it is luminous to need stable electric current to control, and its luminosity is directly proportional with electric current by it.At present, the technology that more company selects to adopt is active organic light emitting display (OLED) technology, and active driving is an all integrated cluster film transistor (TFT) behind each OLED pixel, and pixel (OLED) is lighted by thin-film transistor (TFT).T
1Be switching tube, T
2Be driving tube, C
SIt is storage capacitance.When scan line is selected, switch transistor T
1Open, to capacitor C
SC is worked as in charging
SCurrent potential surpasses T
2During pipe threshold, T
2The pipe conducting, driving OLED is luminous.When scan line is not selected, T
1Pipe ends, at this moment capacitor C
SThe voltage drop at two ends is exactly T
2The gate voltage values of pipe makes T
2Pipe continues conducting, is keeping current drives OLED.But, this thin-film transistor T
2Have only drain electrode of a source electrode, when grid voltage surpassed threshold voltage, the electric current between leak in the source was along with the change in voltage between the leakage of source.In the linear zone, electric current is along with voltage growth in direct ratio; When source-drain voltage continuation increase, device enters the saturation region, and electric current no longer changes along with source-drain voltage, keeps saturation current.Reaching capacity can not increase behind the electric current again, and its illumination effect (brightness) is restricted, and can not satisfy the requirement of big current drives OLED, has limited application in practice.
Therefore, the invention provides a kind of new structure of on amorphous silicon, oxide or organic tft, realizing big current drives OLED.
Summary of the invention
The object of the present invention is to provide a kind of multi-source common-drain thin-film transistor and preparation method thereof, the saturation current of this thin-film transistor is big, and can satisfy to OLED provides the requirement that drives big electric current.
According to purpose of the present invention, above-mentioned multi-source common-drain thin-film transistor provided by the invention is by the following technical solutions: this transistor comprises glass substrate, be positioned at grid layer on the substrate, be positioned at gate insulator on the grid layer, be positioned at the active layer of gate insulator, it is characterized in that, on above-mentioned active layer, be equipped with a drain electrode and at least two source electrodes, drain electrode respectively and raceway groove, channel length are arranged between the source electrode is 20-30um.
Above-mentioned grid layer 1 material therefor is ITO, Ag, heavily doped silicon, and the thickness of grid layer is 200-400nm.
Above-mentioned gate insulator material therefor is SiN or SiO
2, the thickness of gate insulator is 200-400nm.
Above-mentioned active layer material therefor is CuPC, BP3T, pentacene, α-6T organic material or the inorganic material with TFT performance, and the thickness of active layer is 100-300nm.
Above-mentioned source electrode and drain electrode can be used metal A u, Cr, Al or MoNd, MoW, and AlNb alloy material, thickness are 200-400nm.
According to purpose of the present invention, the preparation method of above-mentioned multi-source common-drain thin-film transistor of the present invention, it is on glass substrate, makes grid, gate insulation layer, active layer, source electrode, drain electrode successively, which comprises at least following steps:
1., glass substrate is provided, clean the back oven dry with cleaning agent, evaporated metal layer is as grid layer on glass substrate;
2., on above-mentioned grid layer, precipitate insulating barrier;
3., evaporation or magnetron sputtering active layer on above-mentioned insulating barrier;
4., on above-mentioned active layer a drain electrode of evaporation or magnetron sputtering and at least two source electrodes, at least two source electrodes are arranged in around the drain electrode, between drain electrode and its source electrode on every side raceway groove are arranged, channel length is 20-30um.
The present invention has following advantage compared with prior art: the multi-source common-drain thin-film transistor among the present invention has at least two source electrodes, during use, source electrode can be connected to same voltage source, then I is leaked in the source
DElectric current is drawn from drain electrode, when grid voltage greater than threshold voltage, when this transistor is in the linear zone, I
DAlong with voltage growth in direct ratio; When source-drain voltage continuation increase, this transistor enters the saturation region, I
DIt is constant to remain on saturation current, no longer along with source-drain voltage changes.But, because this transistor has at least two source electrodes, so applying under the condition of source-drain voltage operating current I
DIt is existing transistor twice at least.Preparation method's controllability of the present invention is strong, can keep the transistor of preparation to have big drive current, with the existing processes compatibility, helps large-scale production.
Description of drawings
Fig. 1 is that the bottom gate thin film transistor cross-sectional view is leaked in two sources altogether;
Fig. 2 is that the bottom gate thin film transistor structural representation is leaked in three sources altogether;
Fig. 3 is that the bottom gate thin film transistor structural representation is leaked in four sources altogether;
Fig. 4 is the circuit diagram that multi-source common-drain thin-film transistor of the present invention is used in active driving OLED pixel cell.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are described in further detail.
Bottom gate thin film transistor is leaked in two sources altogether as shown in Figure 1, it comprises a glass substrate 10, be positioned at grid layer 1 on the above-mentioned substrate 10, be positioned at gate insulator 2 on the above-mentioned grid layer 1, be positioned at the active layer 3 of above-mentioned gate insulator 2, on above-mentioned active layer 3, be formed with a drain electrode 31 and at least two source electrodes 32, drain electrode has raceway groove respectively and between the source electrode on every side, and channel length is 20-30um.
Above-mentioned grid layer 1 material therefor is ITO, Ag, heavily doped silicon, and the thickness of grid layer 1 is 200-400nm.
Above-mentioned gate insulator 2 material therefors are SiN or SiO
2, the thickness of gate insulator 2 is 200-400nm.
Above-mentioned active layer 3 material therefors are CuPC, BP3T, pentacene, α-6T organic material or the inorganic material with TFT performance, and the thickness of active layer 3 is 100-300nm.
Above-mentioned source electrode and drain electrode can be used metal A u, Cr, Al or MoNd, MoW, and AlNb alloy material, thickness are 200-400nm.
Embodiment one:
The step for preparing two source thin-film transistor methods of the present invention is as follows:
1., use glass substrate 10, clean substrate 10 back oven dry with cleaning agent, sputter or evaporated metal layer are as grid layer 1 on glass substrate 10, thickness is 200-400nm.Sputtering condition: substrate 10 temperature are 0～40 ℃, gas flow 0-200sccm, and film forming speed is about 30nm/min, and the target composition that sputter is adopted is: In
2O
3And SnO
2Sintered body (10wt%), gas is argon gas+oxygen, for the oxidative resistance of improving the simple metal film, anti-hillock, in magnetron sputtering, when AlNd and MoNb make the gate metal electrode, the Nb of adding 10% is to improve oxidative resistance in Mo, and the Nd of adding 2% can prevent the generation of hillock (protrusion) phenomenon in Al; If adopt the method for evaporation, concrete implementation condition is: electric current 15-30A, and rate of film build 5-10nm/s uses Al, Mg, Ag or Mg/Ag alloy as evaporation source;
2., precipitation insulating barrier 2 on above-mentioned grid layer 1, the thickness of insulating barrier 2 is 200-400nm, sedimentary condition: underlayer temperature 300-350 degree centigrade, radio-frequency power 60w, reative cell pressure tens handkerchiefs deposit 15 minutes, flow 15sccm, reacting gas is silane, ammonia, nitrogen, helium, and reacting gas is silane, ammonia, nitrogen, helium; Perhaps silicon chip is carried out oxidation, preparation SiO
2And SiN
xAs insulating barrier, its thickness is 200-400nm;
3., on above-mentioned insulating barrier 2 evaporation or sputter active layer 3, thickness is 100-300nm;
The film forming of sub-organic materials such as CuPC, BP3T, pentacene (pentacene), α-6T adopts evaporation coating method, and rate of film build is 0.2-1.0nm/S.Film forming such as inorganic material such as amorphous silicon, microcrystal silicon, ZnO oxide adopt sputtering method, the condition of sputter is: substrate 10 temperature are 0～40 ℃, gas flow 0-200sccm, film forming speed is about 30nm/min, the target composition that sputter is adopted is the inorganic material with TFT performance, as amorphous silicon, microcrystal silicon, ZnO oxide semiconductor.The former is mainly used in the organic tft of organic substance as active layer, and the latter is to use amorphous silicon, the metal oxide inorganic TFT as active layer.
4., on above-mentioned active layer 3, form a drain electrode, be positioned at the source electrode of its both sides, between drain electrode and the source electrode raceway groove is arranged, continuation is evaporation or magnetron sputtering layer of metal conducting film on active layer 3, sputtering condition: substrate 10 temperature are 0～40 ℃, gas flow 0-200sccm, film forming speed is about 30nm/min, the target composition that sputter is adopted is Cr, Al, MoNd, MoW, AlNb forms a drain electrode in last metal conductive film etching, is positioned at the source electrode of its both sides with mask plate, drain and source electrode between form raceway groove, channel length is 20-30um, makes through magnetron sputtering.
Embodiment two:
As shown in Figure 2, present embodiment and the foregoing description one are basic identical, just step is 4. different in handling the foregoing description one, 4. step is among the embodiment two: form a drain electrode on above-mentioned active layer 3, be positioned at its three source electrodes on every side, between drain electrode and the source electrode raceway groove is arranged, continuation is sputter layer of metal conducting film on active layer 3, sputtering condition: substrate 10 temperature are 0～40 ℃, gas flow 0-200sccm, and film forming speed is about 30nm/min, the target composition that sputter is adopted is Cr, Al, MoNd, MoW, AlNb, form a drain electrode with mask plate etching on metal conductive film, be positioned at its three source electrodes on every side, form raceway groove between drain electrode and the source electrode, channel length is 20-30um, make through magnetron sputtering, other process is identical with embodiment one.
Embodiment three:
Shown in figure three, present embodiment and the foregoing description two are basic identical, just step is 4. different in handling the foregoing description two, 4. step is among the embodiment two: form a drain electrode on above-mentioned active layer 3, be positioned at its four source electrodes on every side, continue magnetron sputtering layer of metal conducting film on active layer 3.Sputtering condition: substrate 10 temperature are 0～40 ℃, gas flow 0-200sccm, film forming speed is about 30nm/min, and the target composition that sputter is adopted is Cr, Al, MoNd, MoW, AlNb, form a drain electrode in last metal conductive film etching, be positioned at its four source electrodes on every side with mask plate, form raceway groove between drain electrode and the source electrode, channel length is 20-30um, makes through magnetron sputtering.
Below be that (ITO is that grid, Au are source and drain electrode to example, SiO with an organic tft
2Be insulating barrier, Pentacene is an active layer), the electric property of the single drain thin-film transistor in comparison multi-source common-drain thin-film transistor and single source the results are shown in Table 1:
| The thin-film transistor specification | Grid voltage | Drain electrode and source voltage | Saturation current |
| Transistor is leaked in one source one | 40V | 22V | 10μA |
| Transistor is leaked in two sources one | 40V | 45V | 18μA |
| Transistor is leaked in three sources one | 40V | 68V | 26μA |
| Transistor is leaked in four sources one | 40V | 90V | 35μA |
Show that by table 1 multi-source common-drain bottom gate thin film transistor of the present invention is under identical grid voltage and identical drain electrode and source voltage condition, its saturation current approximately is the several times of an existing leakage one source thin-film transistor saturation current, can realize the expansion at double of TFT drive current.
As shown in Figure 4, multi-source common-drain thin-film transistor of the present invention is used in active driving OLED pixel cell, and this circuit is TFT-OLED two pipe TFT drive circuit, wherein T
1And T
2Be TFT, T
1Be switching tube, T
2Be driving tube-multi-source common-drain thin-film transistor of the present invention, Cs is a storage capacitance.In a frame time, T
1During the pipe gating, data voltage is added to T
2Grid, T
2Guarantee adequate food and conducting V
DdPass through T
2Provide operating current to OLED, the shared voltage source of each source electrode, data voltage charges to Cs electric capacity again simultaneously.When the T1 pipe is in not strobe state, by C
sOn storage voltage keep T
2Guarantee adequate food and conducting V
DdContinuation provides operating current to the OLED pixel.OLED is the device of current drive-type, and its luminosity is directly proportional with electric current by it.Therefore, adopt the drive TFT configuration of invention, will improve drive current greatly, increase luminosity.
Those skilled in the art all should be appreciated that, under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby; if any modification and modification fall in the protection range of appended claims and equivalent; for example; thin-film transistor of the present invention production order on glass substrate is made an amendment; change into and make source electrode, drain electrode, active layer, gate insulation layer, grid successively, these modifications and modification are contained in the present invention.
Claims (10)
1, a kind of multi-source common-drain thin-film transistor, this transistor comprises glass substrate (10), be positioned at grid layer (1) on the above-mentioned substrate (10), be positioned at gate insulator (2) on the above-mentioned grid layer (1), be positioned at the active layer (3) of above-mentioned gate insulator (2), it is characterized in that, be equipped with a drain electrode (31) and at least two source electrodes (32) on above-mentioned active layer (3), drain electrode (31) has raceway groove respectively and between the source electrode (32).
2, multi-source common-drain thin-film transistor according to claim 1 is characterized in that: above-mentioned grid layer (1) material therefor is ITO, Ag, heavily doped silicon, and the thickness of grid layer 1 is 200-400nm.
3, multi-source common-drain thin-film transistor according to claim 2 is characterized in that, above-mentioned gate insulator (2) material therefor is SiN or SiO
2, the thickness of gate insulator (2) is 200-400nm.
4, multi-source common-drain thin-film transistor according to claim 3, it is characterized in that, above-mentioned active layer (3) material therefor is CuPC, BP3T, pentacene, α-6T organic material or the inorganic material with TFT performance, and the thickness of active layer (3) is 100-300nm.
5, according to claim 1 or 2 or 3 or 4 described multi-source common-drain thin-film transistors, it is characterized in that: the quantity of above-mentioned source electrode (32) is 3-5, and drain electrode (31) has raceway groove respectively and between the source electrode (32), and channel length is 20-30um.
6, a kind of preparation method who prepares the described multi-source common-drain thin-film transistor of claim 1, this method is on glass substrate (10), make grid layer (1), gate insulation layer (2), active layer (3), source electrode (32), drain electrode (31) successively, which comprises at least following steps:
1., glass substrate (10) is provided, clean the back oven dry with cleaning agent, go up evaporation or splash-proofing sputtering metal layer as grid layer 1 in glass substrate (10);
2., upward precipitation insulating barrier (2), at above-mentioned grid layer (1);
3., go up evaporation or magnetron sputtering active layer (3) at above-mentioned insulating barrier (2);
4., upward evaporation or a drain electrode of magnetron sputtering (31) and at least two source electrodes (32), source electrode (32) is arranged in drain electrode (31) on every side at above-mentioned active layer (3), drain (31) and its source electrode (32) on every side between raceway groove is arranged.
7, the preparation method of multi-source common-drain thin-film transistor according to claim 6 is characterized in that: above-mentioned grid layer (1) material therefor is ITO, Ag, heavily doped silicon, and the thickness of grid layer 1 is 200-400nm.
8. the preparation method of multi-source common-drain thin-film transistor according to claim 7 is characterized in that above-mentioned gate insulator (2) material therefor is SiN or SiO
2, thickness is 200-400nm.
9, the preparation method of multi-source common-drain thin-film transistor according to claim 8, it is characterized in that, above-mentioned active layer (3) material therefor is CuPC, BP3T, pentacene, α-6T organic material or the inorganic material with TFT performance, and the thickness of active layer 3 is 100-300nm.
10, according to the preparation method of claim 6 or 7 or 8 or 9 described multi-source common-drain thin-film transistors, it is characterized in that: the quantity of above-mentioned source electrode (32) is 3-5, and drain electrode (31) has raceway groove respectively and between the source electrode (32), and channel length is 20-30um.
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|---|---|---|---|
| CNA200910052040XA CN101562196A (en) | 2009-05-26 | 2009-05-26 | Multi-source common-drain thin-film transistor and preparation method thereof |
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| CNA200910052040XA CN101562196A (en) | 2009-05-26 | 2009-05-26 | Multi-source common-drain thin-film transistor and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489921A (en) * | 2013-09-29 | 2014-01-01 | 合肥京东方光电科技有限公司 | Thin film transistor, manufacturing method thereof, array substrate and display device |
| US9461066B2 (en) | 2012-08-10 | 2016-10-04 | Boe Technology Group Co., Ltd. | Thin film transistor and method of manufacturing the same, array substrate and display device |
| CN106449764A (en) * | 2016-11-23 | 2017-02-22 | 天津大学 | Flexible thin-film bottom-gate dual-channel transistor |
-
2009
- 2009-05-26 CN CNA200910052040XA patent/CN101562196A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9461066B2 (en) | 2012-08-10 | 2016-10-04 | Boe Technology Group Co., Ltd. | Thin film transistor and method of manufacturing the same, array substrate and display device |
| CN103489921A (en) * | 2013-09-29 | 2014-01-01 | 合肥京东方光电科技有限公司 | Thin film transistor, manufacturing method thereof, array substrate and display device |
| WO2015043082A1 (en) * | 2013-09-29 | 2015-04-02 | 合肥京东方光电科技有限公司 | Thin-film transistor and manufacturing method therefor, array substrate and display device |
| CN103489921B (en) * | 2013-09-29 | 2016-02-17 | 合肥京东方光电科技有限公司 | A kind of thin-film transistor and manufacture method, array base palte and display unit |
| CN106449764A (en) * | 2016-11-23 | 2017-02-22 | 天津大学 | Flexible thin-film bottom-gate dual-channel transistor |
| CN106449764B (en) * | 2016-11-23 | 2023-07-18 | 天津大学 | Flexible thin film bottom gate double-channel transistor |
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Open date: 20091021 |