CN101551421B - A structure of SET collecting and detecting circuit - Google Patents
A structure of SET collecting and detecting circuit Download PDFInfo
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- CN101551421B CN101551421B CN2009100789098A CN200910078909A CN101551421B CN 101551421 B CN101551421 B CN 101551421B CN 2009100789098 A CN2009100789098 A CN 2009100789098A CN 200910078909 A CN200910078909 A CN 200910078909A CN 101551421 B CN101551421 B CN 101551421B
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Abstract
A structure of SET collecting and detecting circuit comprises collecting circuit and detecting circuit. Level signal D outputs, through collecting circuit, N level signals Y which are in a same or reverse phase with level signal D. The event incidence into the collecting circuit triggers transient pulse of level signal Y. Under the effect of clock signal CLK, the detecting circuit captures the transient pulse. The collecting circuit has N links formed through cascading of cell circuits. The component links of the collecting circuit in the present invention reflect the states of most of the common circuit nodes in digital circuit. Through obtaining the single-event transient pulse width distribution of the circuit structure, the transient pulse status of most of the common circuit nodes in digital circuit after single-event incidence may be reflected. The present invention may be used to effectively assess the SET sensitivity of digital circuits and the processes on which digital circuits are based and provides a basis for anti-single event radiation hardening of digital circuits.
Description
Technical field
The present invention relates to a kind of single-particle transient pulse collection and testing circuit, relate in particular to a kind of energy by detecting collection and the testing circuit that single-particle transient pulse width effectively characterizes digital circuit single-particle transient state susceptibility, as the foundation of anti-single particle radiation hardened.
Background technology
The change that radiation that high energy proton or high-energy neutron bump atomic nucleus produce and the heavy nucleus particle in the cosmic rays can both cause circuit state, as bit flipping of the transient pulse in the combinational logic, storage class unit etc., this effect is the result of single particle effect, is commonly referred to single particle effect.Single particle effect can be divided into single-particle inversion (SEU), recoverable single event latch-up (SEL), single-particle transient state single-particle soft errors such as (SET), simultaneously, also include single-particle and burn (SEB), the puncture of single-particle grid (SEGR), the hard errors such as (SEL) of expendable single event latch-up.
Under sub-micro technology, the SET effect of Digital Logic becomes the weak link of reinforcing.The SET pulse that particle incident produces is distributed by design, technology and projectile energy and determines and influence.To having carried out a lot of researchs in this respect, proposed some SET pulse models, but these models all contain amount relevant with technology or parameter mostly both at home and abroad, need the technology exact parameters data of being correlated with.These supplemental characteristics are difficult to obtain from technology manufacturer, so reflect accurately that by model the present difficulty of SET pulse characteristic of technology is bigger.And it is a definite value that model obtains, but in actual tests, people such as J.M.Benedetto and D.G.Mavis discovers, for circuit of the same size, in any given LET value, the distribution of the duration of SET pulse is very wide, from hundreds of ps to several ns.So can not need the design particular electrical circuit so that obtain the SET transient response of the reality of technology by test only based on the simulation of model.The directly SET pulse of catching circuits generation, obtaining in test direct SET waveform is very difficult thing.In fact,, accurately obtain the waveform meaning of SET and little, because what more pay close attention to for circuit design is the width of pulse for the design of logical circuit.Just those amplitudes have surpassed the noise margin of circuit, reached the turn threshold of subordinate's circuit, and the pulse span is enough wide, unlikelyly is attenuated to circuit just may be propagated and be converted into to those SET pulses that are not enough to influence the normal logic state in circuit fault-signal in transmission course.
Research has both at home and abroad also proposed some and has detected the Method and circuits structure of SET pulse, but these methods just generate and detect the SET pulsewidth based on the element circuit (as phase inverter) of certain single size, single loading condition.In digital integrated circuit, have the logic gate unit of various different driving abilities, logic gates at different levels have the output load situation of different situations.In a DLC (digital logic circuit), for different logic gate unit, different loads has different situations after the single-particle incident.Only carry out test of SET pulsewidth and assessment, be not enough to related process is obtained enough information, support the design of side circuit with certain single situation.Know radiation hardening with such data, tend to make the amount of redundancy in the design wide or loose excessively, cause the unnecessary performance expense or reduced to make reinforcement performance can not reach expection.
Summary of the invention
The technical matters that the present invention solves: overcome the deficiencies in the prior art, a kind of single-particle transient pulse collection and testing circuit structure have been proposed, this circuit structure can characterize most circuit common node state in the digital circuit, distribute by the single-particle transient state pulsewidth of obtaining circuit structure of the present invention, obtain the foundation of digital circuit anti-single particle radiation hardened.
Technical solution of the present invention: a kind of single-particle transient pulse collection and testing circuit structure, comprise collecting circuit and testing circuit, level signal D is through collecting circuit output and level signal D homophase or N anti-phase level signal Y, particle incident collecting circuit causes level signal Y to produce transient pulse, testing circuit is caught transient pulse under the effect of clock signal clk, described collecting circuit comprises the link that the N bar is formed by the element circuit cascade, the input of N bar link is level signal D, element circuit in the different links possesses different driving forces and different fan-in fan-out ratios, element circuit in the same link possesses identical driving force and identical fan-in fan-out ratio, and N is an integer.
The present invention's advantage compared with prior art: the present invention proposes a kind of single-particle transient pulse collection and testing circuit structure, collecting circuit wherein comprises that the N bar is used to characterize different driving and loading condition (by the fan-in fan-out than embodying) by possessing link that the element circuit cascade of different driving forces with different fan-in fan-out ratios form.Because these links have characterized the state of most of circuit common node in the digital circuit, distribute by the single-particle transient state pulsewidth of obtaining circuit structure of the present invention, can reflect the transient pulse situation that most of circuit common node is produced in the digital circuit after single-particle incident, therefore circuit structure of the present invention can be used for effectively assessing digital circuit and digital circuit based on the single-particle transient state susceptibility of technology, and be distributed as digital circuit anti-single particle radiation hardened by resulting single-particle transient state pulsewidth foundation be provided.
Description of drawings
Fig. 1 is the composition structural drawing of collection of the present invention and testing circuit;
Fig. 2 is the fundamental diagram of time redundancy latch in the testing circuit of the present invention;
Fig. 3 is the composition structural drawing of collecting circuit of the present invention;
Fig. 4 is the link configuration of collecting circuit of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.
The present invention is made of collecting circuit and testing circuit two parts, as shown in Figure 1, level signal D is through collecting circuit output and level signal D homophase or N anti-phase level signal Y, particle incident collecting circuit causes level signal Y to produce transient pulse, and testing circuit is caught transient pulse under the effect of clock signal clk.Input signal D connects fixing power supply or low level signal, and input signal CLK is the clock signal that changes in the cycle.Under the normality, the testing circuit generation of not overturning takes place and detected circuit when catching as the single-particle transient pulse, and the output of testing circuit can be overturn.
In entire circuit, collecting circuit accounts for most areas, because the collecting circuit area is much larger than testing circuit, so the source of most pulses of capturing of testing circuit is collecting circuit, and the transient pulse that particle incident produces mainly produces in this part.Collecting circuit is made up of N link, and every chain route element circuit cascade (being the input of the output of last element circuit as back primary unit circuit) constitutes.Cascade is the same logical block in same link, and the output load of the element circuit of cascade also is the same in the same link.The driving force of element circuit is the fan-in fan-out ratio of element circuit with the ratio of output load.Difference between the different links is the driving force and the fan-in output ratio of the element circuit that adopted, chooses different fan-in fan-outs than being provided with and the element circuit of different driving ability, can characterize the various drivings and the loading condition of digital integrated circuit.By the detection of transient pulse that collecting circuit is produced after single-particle incident, can understand the single-particle transient state susceptibility of technology and circuit, instruct design reinforcement.
Testing circuit is made up of N * M time redundancy latch, each bar link is connected to the time redundancy latch of M different Δ T, Δ T is the delay of the delay unit of this road latch, as shown in Figure 2, mainly comprise MUX MUX and voting machine in the time redundancy latch, time redundancy latch principle is as follows: the effect of voting machine is majority voting, is chosen at the logic of the logic state of number in the majority in its three input signals as output.When the pulse width on the input signal of time redundant latch storage during less than Δ T, three input signals of voting machine have 1 the tunnel transient pulse is arranged at synchronization at the most, be majority with normal signal logic level always, so the output of voting machine do not have pulse; When transient pulse width during greater than Δ T, after the Δ T time, Δ T adds before the pulse width time, at least two inputs is arranged simultaneously at the transient pulse state in three inputs of voting machine, therefore the voting machine output pulse same with input, just than input delay Δ T.The time redundancy latch can capture and come from collecting circuit or result from the transient pulse of its inner span greater than Δ T.Utilize the time redundancy latch can suppress any from the characteristic of outside or inner span less than the transient pulse of Δ T, if the transient pulse amplitude that certain link in the collecting circuit produces reaches turn threshold, span is greater than Δ T, and the foundation of just in time satisfying the time redundancy latch keeps requirement, this transient pulse will be captured, and produces upset in the corresponding output end of testing circuit.Detected certain output terminal of testing circuit overturns in experiment, and just expression has captured the single-particle transient pulse of width greater than Δ T.The output of time redundancy latch is the output of whole single-particle transient pulse collection and testing circuit.Observe upset in a certain output, think that promptly trappable single-particle transient pulse has taken place the link that road connected, the width of pulse is at least greater than Δ T+T
Loop, wherein Δ T is the delay of the delay unit of this road latch, Δ T obtains by chain of inverters, T
LoopAfter removing delay unit, the time redundancy latch inner ring road remainder response needed time of input.
The concrete structure of collecting circuit as shown in Figure 3,21 is the most basic link among the figure, choose the element circuit of driving force minimum, with such element circuit cascade (being the input of the output of last element circuit as back primary unit circuit), single doubly driving of formation and fan-in fan-out ratio are 1: 1 link.Link is input as level signal D, and progression is any, has enough single-particle transient states to take place but want abundant under specific particle fluence when satisfying irradiation test.Testing circuit be propagated and be exported to the transient pulse that particle incident produces will along link if amplitude has surpassed the noise margin of this element circuit and reached turn threshold.
Each bar link structure of other of collecting circuit is identical with basic link 21, makes its output consistent with the basic link output phase on the progression, and guarantees that the link area has enough SET to take place under specific particle fluence when satisfying irradiation test.Be that with the difference of basic link different links chooses different driving forces and fan-in fan-out ratio.Choose the element circuit that K doubly drives and to realize the link that K doubly drives.1: the fan-in fan-out of J is than then driving J identical element circuit (noting: have only an output to be connected to again the input of next stage) or increase capacitive load (the appearance value of choosing electric capacity is J-1 times an element circuit input capacitance) acquisition shown among Fig. 2 22 in the output of every grade of element circuit in J element circuit by every grade of element circuit.The link that utilizes different fan-in fan-out and constitute than the element circuit that is provided with and chooses the different driving ability can characterize the state of the digital integrated circuit internal node under the various situations.The link kind of choosing is many more, and the situation of sign is many more, and the state of the single-particle transient state that can reflect is also detailed more.As shown in Figure 4, choose 1: 1,1: 2,1: 4,1: 8 totally four kinds of different fan-in fan-outs than being provided with and one times, two times, three times, the four times element circuits of totally four kinds of driving forces, can form 16 kinds of links, these 16 links can be characterized in the most circuit common node state in the digital integrated circuit.
Hence one can see that, utilize single-particle transient pulse collection of the present invention and testing circuit, can be by the upset number of times of each time redundancy latch of record in the irradiation test process, judge the single-particle transient pulse width of the link of representing different circuit states and the distribution of pulse width, thereby obtain the criterion and the foundation of radiation hardening.
Unaccomplished matter of the present invention belongs to techniques well known.
Claims (3)
1. single-particle transient pulse collection and testing circuit structure, it is characterized in that: comprise collecting circuit and testing circuit, level signal D imports collecting circuit, collecting circuit output and level signal D homophase or N anti-phase level signal Y, particle incident collecting circuit causes level signal Y to produce transient pulse, testing circuit is caught transient pulse under the effect of clock signal clk, described collecting circuit comprises the link that the N bar is formed by the element circuit cascade, the input of N bar link is level signal D, element circuit in the different links possesses different driving forces and different fan-in fan-out ratios, element circuit in the same link possesses identical driving force and identical fan-in fan-out ratio, and N is an integer.
2. a kind of single-particle transient pulse collection according to claim 1 and testing circuit structure, it is characterized in that: described link number N is 16, wherein the element circuit of 1 times of driving force of article one chain route forms than cascade with 1: 1 fan-in fan-out, the element circuit of 1 times of driving force of second chain route forms than cascade with 1: 2 fan-in fan-out, article three, the element circuit of 1 times of driving force of chain route forms than cascade with 1: 4 fan-in fan-out, article four, the element circuit of 1 times of driving force of chain route forms than cascade with 1: 8 fan-in fan-out, article five, the element circuit of 2 times of driving forces of chain route forms than cascade with 1: 1 fan-in fan-out, article six, the element circuit of 2 times of driving forces of chain route forms than cascade with 1: 2 fan-in fan-out, article seven, the element circuit of 2 times of driving forces of chain route forms than cascade with 1: 4 fan-in fan-out, article eight, the element circuit of 2 times of driving forces of chain route forms than cascade with 1: 8 fan-in fan-out, article nine, the element circuit of 3 times of driving forces of chain route forms than cascade with 1: 1 fan-in fan-out, article ten, the element circuit of 3 times of driving forces of chain route forms than cascade with 1: 2 fan-in fan-out, article 11, the element circuit of 3 times of driving forces of chain route forms than cascade with 1: 4 fan-in fan-out, article 12, the element circuit of 3 times of driving forces of chain route forms than cascade with 1: 8 fan-in fan-out, article 13, the element circuit of 4 times of driving forces of chain route forms than cascade with 1: 1 fan-in fan-out, article 14, the element circuit of 4 times of driving forces of chain route forms than cascade with 1: 2 fan-in fan-out, article 15, the element circuit of 4 times of driving forces of chain route forms than cascade with 1: 4 fan-in fan-out, and the element circuit of 4 times of driving forces of the 16 chain route forms than cascade with 1: 8 fan-in fan-out.
3. a kind of single-particle transient pulse collection according to claim 1 and testing circuit structure is characterized in that: described testing circuit is made up of N * M time redundancy latch, and each bar link is connected to M time redundancy latch, and M is an integer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100789098A CN101551421B (en) | 2009-02-27 | 2009-02-27 | A structure of SET collecting and detecting circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100789098A CN101551421B (en) | 2009-02-27 | 2009-02-27 | A structure of SET collecting and detecting circuit |
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| CN101551421A CN101551421A (en) | 2009-10-07 |
| CN101551421B true CN101551421B (en) | 2010-11-10 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8451028B2 (en) | 2011-03-22 | 2013-05-28 | University Of Saskatchewan | Methods and devices for detecting single-event transients |
| CN102818939B (en) * | 2011-06-08 | 2014-12-03 | 中国科学院微电子研究所 | Measuring circuit for single-event transient pulse width |
| CN103063933B (en) * | 2011-10-20 | 2015-08-05 | 中国科学院微电子研究所 | Single-particle pulse width measurement circuit |
| CN102621401B (en) * | 2012-03-23 | 2014-08-20 | 中国科学院微电子研究所 | Circuit for measuring width of single-particle transient pulse |
| US8896978B2 (en) * | 2012-06-15 | 2014-11-25 | Texas Instruments Incorporated | Integrated circuit with automatic deactivation upon exceeding a specific ion linear energy transfer (LET) value |
| CN102981063B (en) * | 2012-11-13 | 2015-09-16 | 工业和信息化部电子第五研究所 | Single event transient pulse method for measuring width and measurement mechanism, pulse generating device |
| CN103219970B (en) * | 2013-04-02 | 2016-03-23 | 工业和信息化部电子第五研究所 | Single event transient pulse width method for widening and circuit |
| CN103353999B (en) * | 2013-06-25 | 2015-09-02 | 浙江大学 | A kind of voting machine with Radiation hardness |
| CN103888099B (en) * | 2013-11-18 | 2016-07-06 | 北京时代民芯科技有限公司 | A kind of anti-single particle transient state redundancy filter circuit |
| CN105866659B (en) * | 2016-03-31 | 2018-05-25 | 中国人民解放军国防科学技术大学 | A kind of more transient pulse distribution measurement methods of universal single-particle |
| CN106774775A (en) * | 2017-02-22 | 2017-05-31 | 许继集团有限公司 | It is a kind of to prevent the opening into trip method and system of single-particle inversion misoperation |
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