CN101550538A - Magnetron sputtering target used for ultra high vacuum and process for preparing magnet in the target - Google Patents
Magnetron sputtering target used for ultra high vacuum and process for preparing magnet in the target Download PDFInfo
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- CN101550538A CN101550538A CNA2009100844818A CN200910084481A CN101550538A CN 101550538 A CN101550538 A CN 101550538A CN A2009100844818 A CNA2009100844818 A CN A2009100844818A CN 200910084481 A CN200910084481 A CN 200910084481A CN 101550538 A CN101550538 A CN 101550538A
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Abstract
The present invention discloses a magnetron sputtering target used for ultra high vacuum and a process for preparing magnet in the target, wherein an O-ring seal is applied between target cathode and target anode of the magnetron sputtering target to reduce number of the O-rings greatly, which satisfies request of ultra high vacuum. The invention provided process for preparing magnet in the target optimizes finite element to size and shape of the magnet by establishing a mathematical model, which makes parallel component of the magnetic field around the target surface distribute more uniform and extensive and improves usage range of the target surface in sputtering and improves utility ratio of the target effectively.
Description
Technical field
The present invention relates to the magnetic control sputtering vacuum coating technology, refer to the preparation technology of magnet in a kind of magnetron sputtering target and the target body especially.
Background technology
Vacuum coating technology has in various industry and scientific research field very widely to be used, special in the field that relates to hi-tech industry as disk manufacturing, solar cell, the manufacturing of little processing device, IC electron trade etc.Magnetron sputtering technique has that film forming efficiency height, film forming densification, film and substrate bonding force are strong, the various material films that are suitable for growing, depositing temperature are low, can keep stable rate of film build in for a long time, film forming repeatable high, be suitable for advantage such as industrial production in enormous quantities.
Magnetron sputtering is under the static magnetic field effect that permanent magnet produces, the electronics that emission of cathode goes out is constrained near the zone of target surface, strengthened near the ionizing power of target surface greatly, improved near the plasma density of target surface, therefore can improve the efficient of sputter greatly, be one of present the most widely used sputtering method.But owing to be subjected to the restriction in magnetic field, only near the regional degree of ionization that the magnetic field parallel component is stronger target surface strengthens, therefore have only the subregion to be concentrated sputter on the target surface, sputter stays the pit of one annular " runway " shape later on target surface, cause the utilization ratio of target lower, generally between 10～30%.The method of moving magnet can bring up to 40～50% with the utilization ratio of target, but has reduced the stability and the reliability of sputter, and the project organization complexity, is difficult to apply.And magnetron sputtering target is applied to ultrahigh vacuum(HHV), and more needing to consider the design of simplifying of target, complicated target structure can cause a lot of vacuum dead angle, and can increase the vacuum deflation rate of target, thereby can't obtain ultrahigh vacuum(HHV), has influence on the quality of spatter film forming simultaneously.
Magnetron sputtering target is generally graded by target cathode, ground protection sheath (anode), magnet, water-cooled part, electrode and sealing and forms.Must insulate between negative electrode and the anode to guarantee sputter energy works better, general way is to add one deck insulating material, for example tetrafluoroethylene, pottery etc. between negative electrode and anode.All need to do vacuum-sealing between insulation layer and negative electrode, the anode, and because metallic seal must be used anaerobic copper band or wire and fastening with metal (being generally stainless steel) screw, these all are electric good conductors, so when the sealed insulation layer, can not use, the general O type circle that adopts is finished vacuum-sealing, add the sealing of water-cooling groove, a general target need use 2～4 O type circles.Being increased in the ultrahigh vacuum(HHV) application of O type number of turns amount should be avoided as far as possible, because it has very lasting and a large amount of venting, and can not do the baking of comparatively high temps, directly has influence on obtaining of vacuum chamber ultrahigh vacuum(HHV).
Summary of the invention
At the problem that prior art exists, one of purpose of the present invention is to provide a kind of magnetron sputtering target that is applicable to ultrahigh vacuum(HHV).
Another object of the present invention is to provide the preparation technology of magnet in a kind of magnetron sputtering target body.
The preparation technology of magnet in the magnetron sputtering target body of the present invention, concrete steps are: 1) set up the magnet geometric model; 2) geometric model is carried out gridding; 3) determine the physical parameter of magnet, comprise relative magnetic permeability and coercive force; 4) determine the final condition of finite element analysis, draw the distributed image of magnetic field in the space according to the finite element analysis algorithm; 5) extract magnetic field parallel component and the curve plotting in 3～6mm zone more than the magnet pole in the distributed image from step 4); 6) change magnet size, size, calculate again, obtain a required target size that is applied to the most suitable; 7) angle of taper of change magnet poles face is calculated again, obtains the angle an of the best, and it is broad as far as possible and even to make the magnetic field parallel component distribute in 3～6mm zone more than magnet pole; 8) select suitable permanent magnet material for use, according to designed size and dimension processing magnet and magnetize.
Further, when magnet described in the step 1) is symmetrical structure, gets described magnet center cross section and set up two-dimensional model.
Further, described permanent magnet material is neodymium iron boron or aluminium tweezer cobalt sintered alloy.
Further, described target body adopts oxygen free copper or the processing of red copper one.
Further, described magnet is shaped as cylinder, annulus or rectangle.
Further, the final condition of described finite element is a far field boundary condition.
Magnetron sputtering target of the present invention, comprise target cathode and target anode, described target anode comprises target top flange and ground connection epitheca, target top flange links to each other with the ground connection epitheca, the top seal of target anodic, target cathode comprises target body, target body is by the insulated connecting piece that is provided with on the target anode and the target anode is discontiguous is arranged in the ground connection epitheca, and the target body upper surface seals by O type circle between the target anode, tight fixed target material on the described target body lower surface, the ground connection epitheca of target bottom is provided with the through hole that matches with the target size.
Further; described insulated connecting piece comprises screw and insulating ceramic protective sleeve; screw top is contained in the draw-in groove that matches with screw upper end that is provided with on the flange of described target top; the outside surface that screw contacts with draw-in groove is provided with the insulating ceramic protective sleeve, and the thread end of screw bottom is threaded with described target body.
Further, described target body is provided with the target electrode post, be provided with water cooling plant and magnet in the target body, the target body upper surface is provided with through hole, be provided with the groove of ccontaining water cooling plant and magnet in the target body of this through hole with the lower section, described through hole is communicated with groove, and capping is set on this through hole will be sealed in the described target body, and capping is provided with described magnet is fixed on adjustment screw in the described groove.
Further, described magnet is made of center magnet and peripheral magnet, and center magnet is arranged on described target body middle part, and peripheral magnet is arranged on the center magnet both sides, be provided with described water cooling plant between peripheral magnet and the center magnet, be provided with O-ring seals between this water cooling plant and the described capping.
Further, flange top, described target top is provided with metal edge of a knife tongued and grooved flanges, on the metal edge of a knife tongued and grooved flanges target top cover is set, and seal between metal edge of a knife tongued and grooved flanges and the target top cover, the target top cover is provided with the water pipe head of described water cooling plant and the electrode contact of described target electrode post, also is provided with the pumping mouth that links to each other with vacuum extractor on the target top cover.
The preparation technology of magnet of the present invention, by setting up mathematical model, the size and shape of magnet is carried out finite element optimization, make near the target surface magnetic field parallel component be more evenly distributed and broad, the use range of target face when having improved sputter effectively raises the utilization ratio of target.O-ring seals has only been adopted in the sealing of magnetron sputtering target of the present invention under ultra-high vacuum environment one, has satisfied the ultrahigh vacuum(HHV) requirement of target, has guaranteed the steady operation of magnetron sputtering target under ultra-high vacuum environment.
Description of drawings
Fig. 1 a is the magnet model and the magnetic line of force distribution plan thereof of magnetron sputtering target of the present invention;
Fig. 1 b is the stereographic map of magnet;
Fig. 2 a is the central cross-sectional view of magnetron sputtering target of the present invention;
Fig. 2 b is the vertical view of magnetron sputtering target of the present invention;
Fig. 3 is an A portion enlarged view among Fig. 2 a;
Fig. 4 is near the magnetic field of the target surface parallel component distribution curve that utilizes finite element method to obtain;
Fig. 5 is the assembling synoptic diagram of magnetron sputtering target of the present invention.
Embodiment
Shown in Fig. 2 a, magnetron sputtering target of the present invention comprises target cathode, target anode and target 13, target cathode is a target body 6, and target body 6 is oxygen free copper or the processing of red copper one, because oxygen free copper or red copper have very good heat-conducting, and do not have magnetic, can in ultrahigh vacuum(HHV), use.The target anode is made of ground connection epitheca 14, target top flange 4, metal edge of a knife tongued and grooved flanges 2 and target top cover 1, wherein, the top of ground connection epitheca 14 is threaded with target top flange 4, card is sat on the target top flange 4 metal edge of a knife tongued and grooved flanges 2, there is capping 1 on metal edge of a knife tongued and grooved flanges 2 tops by screw retention, by capping 1 and the O type circle that between the contact surface of capping 1 and metal edge of a knife tongued and grooved flanges 2, is provided with, will seal in the target anode.
Shown in Fig. 2 a and 3, target top flange 4 is provided with the through hole of sitting for the screw card, screw upper end card is sitting in this through hole, and screw is provided with insulating ceramic overcoat 18 with the outside surface that target top flange 4 contacts, avoid owing to the screw conduction causes target anode and negative electrode short circuit, target body 6 is contained in the cavity of ground connection epitheca 14, by screw target body 6 is fixed on the target top flange 4, target body 6 does not all contact with ground connection epitheca 13 with target top flange 4, between the upper surface of target body 6 and the target top flange 4 certain interval is arranged, and will seal between target anode and the target cathode by one O type circle 8, O type circle 8 is contained in the ring recess that is provided with on the target top flange 4, wherein the degree of depth of O type ring recess need be estimated according to the needed pressure of sealing, generally must not be less than the radius of O type circle 8, must not be greater than D-Δ d, wherein D is an O type loop diameter, to be O type circle 8 (be generally 〉=deformation quantity under 13MPa) at the required pressure of sealing Δ d.O type circle 8 plays the effect of sealing on the one hand, also the negative electrode and the anodized insulation of target are opened on the other hand, so the degree of depth of O type ring recess is slightly shallow can also keep the spacing of about 0.1-0.5mm after 8 deformation of assurance O type circle between target cathode and the anode.O type circle 8 for the Viton rubber seal have the venting rate low, can normally use 200 ℃ or above pyritous advantage, can be used for 〉=1 * 10
-8The ultrahigh vacuum(HHV) of Pa.
Shown in Fig. 2 a and Fig. 2 b, be provided with magnet mounting groove and cooling trough 12 in the target body 6, center magnet 10 and peripheral magnet 9 correspondence respectively are placed in the magnet mounting groove, target body 6 upper surfaces are added a cover capping 7 with target body 6 sealings, in order to prevent that the water in the cooling trough 12 from flowing out, cooling trough 12 places are by the sealing of twice O type circle, and capping 7 is provided with the adjustment screw, be used to hold out against magnet, avoid magnet to be subjected to displacement.The circulating pipe joint that the target electrode post is set in the capping 7 and is communicated with cooling trough 12, corresponding with the coaxial electrode wire terminal 17 and the water pipe head 15 that are provided with on the target top cover 1, also be provided with on the target top cover 1 and be used for the pumping mouth 16 that links to each other with vacuum extractor, before carrying out the target sputter by vacuum extractor to extracting black vacuum in the target anode.The underrun target pressure ring 11 of target body 6 closely contacts target 13 with target body 6 bottom surfaces.
Shown in Fig. 1 a and 1b, peripheral magnet 9 is and 13 suitable toroidal magnets of diameter of target, magnetic pole inner edge reversed cone angle wherein, and center magnet 10 is a cylindrical magnet, magnetic pole top reversed cone angle.
The installation steps of magnetron sputtering target of the present invention are as follows:
A) O type circle is installed in the O type ring recess of target top flange, fastening.Be used for fastening screw outside and be with the insulating coating that processable ceramic processes;
B) insulativity between check target top flange and the target body, and determine that by vacuum leak hunting O type circle sealing leak rate less than after below the leak locator sensitivity, installs target and ground connection epitheca;
C) target is installed: target is pressed on by a target pressure ring on the target contact surface of target body, and is fastening by one group of screw;
D) the ground connection epitheca is installed on the flange of target top by bottle screw, and the distance between ground connection epitheca end face and the target is controlled by the spiral shell button number of rotation;
E) target is installed on the vacuum chamber, fastening metal sealing edge of a knife flange, vacuum leak hunting is to guarantee sealing leak rate less than below the leak locator sensitivity;
F) magnet is fit in the magnet mounting groove, and sealed cistern, the sealing of tank realizes by twice O type circle.Also having one group of screw to be used to hold out against magnet on the tank sealing cover simultaneously avoids magnet to be subjected to displacement.
G) circulating pipe and contact conductor are installed;
H) the target top cover is installed;
I) after the entire target installation, just can carry out magnetically controlled DC sputtering.During sputter, target body, target, target pressure ring are in the negative electrode of target, and parts ground connection such as ground connection epitheca, target top flange, metal edge of a knife flange and as the anode of target adds the negative high voltage of a number hectovolt on the negative electrode of target during sputter.Must guarantee during sputter that recirculated water is without interruption with cooling magnet and target.
The target top flange 4 of target body 6 tops has a cavity for barrel-like structure, when the magnet in the target body 6 need be changed, magnet can be taken out from sputtering target top, and not destroy the ultrahigh vacuum(HHV) atmosphere of sputtering target.
Magnet preparation technology of the present invention may further comprise the steps:
1. set up the magnet geometric model, the magnet of symmetrical structure is got central cross-section and is set up two-dimensional model;
2. geometric model is carried out gridding;
3. determine the physical parameter of magnet, comprise relative magnetic permeability and coercive force;
4. determine the final condition of finite element analysis, adopt far field boundary condition, think that promptly at infinity magnetic field is zero;
5. find the solution, draw the distributed image of magnetic field in the space, as shown in Figure 1a;
6. magnetic field parallel component and curve plotting in the above 3～6mm zone of extraction magnet pole;
7. change magnet size, size, calculate again, obtain a required target body size that is applied to the most suitable;
8. change the angle of taper of magnet poles face, calculate again, obtain the angle an of the best, it is broad as far as possible and even to make the magnetic field parallel component distribute in 3～6mm zone more than magnet pole; As shown in Figure 4;
9. select suitable permanent magnet material for use, according to designed size and dimension processing magnet and magnetize.
As shown in Figure 5, the bottom of metal edge of a knife tongued and grooved flanges 2 of the present invention is installed in the superaltitude chamber, and ultrahigh vacuum(HHV) only seals by O type circle between black vacuum.The existence of black vacuum can further reduce the gas leakage of O type circle, protects magnet simultaneously and prevents that condensation of moisture from causing the phenomenon of target short circuit.
It is to be noted and any distortion that the present invention makes according to embodiment all do not break away from the scope that spirit of the present invention and claim are protected.
Claims (10)
1. the preparation technology of magnet in the magnetron sputtering target body, concrete steps are: 1) according to the target size, determine magnet size and set up the magnet geometric model; 2) geometric model is carried out gridding; 3) determine the physical parameter of magnet, comprise relative magnetic permeability and coercive force; 4) determine the final condition of finite element analysis, draw the distributed image of magnetic field in the space according to finite element algorithm; 5) extract magnetic field parallel component and the curve plotting in 3～6mm zone more than the magnet pole in the distributed image from step 4); 6) angle of taper of change magnet poles face is calculated again, obtains the angle an of the best, and it is broad as far as possible and even to make the magnetic field parallel component distribute in 3～6mm zone more than magnet pole; 7) according to designed magnet size and shape processing magnet and magnetize.
2. the preparation technology of magnet is characterized in that in the magnetron sputtering target body as claimed in claim 1, when magnet described in the step 1) is symmetrical structure, gets described magnet center cross section and sets up two-dimensional model.
3. the preparation technology of magnet is characterized in that in the magnetron sputtering target body as claimed in claim 1, and described magnet material is neodymium iron boron or aluminium tweezer cobalt sintered alloy.
4. the preparation technology of magnet in the magnetron sputtering target body as claimed in claim 1 is characterized in that described target body adopts oxygen free copper or the processing of red copper one.
5. the preparation technology of magnet is characterized in that in the magnetron sputtering target body as claimed in claim 1, and described finite element final condition is a far field boundary condition.
6. a magnetron sputtering target is characterized in that, comprises target cathode and target anode, and described target anode comprises target top flange and ground connection epitheca, and target top flange links to each other with the ground connection epitheca, the top seal of target anodic; Target cathode comprises target body, target body is by the insulated connecting piece that is provided with on the target anode and the target anode is discontiguous is arranged in the ground connection epitheca, and the target body upper surface seals by O type circle between the target anode, tight fixed target material on the described target body lower surface, the ground connection epitheca of target bottom is provided with the through hole that matches with the target size.
7. magnetron sputtering target as claimed in claim 6; it is characterized in that; described insulated connecting piece comprises screw and insulating ceramic protective sleeve; screw top is contained in the draw-in groove that matches with screw upper end that is provided with on the flange of described target top; the outside surface that screw contacts with draw-in groove is provided with the insulating ceramic protective sleeve, and the thread end of screw bottom is threaded with described target body.
8. magnetron sputtering target as claimed in claim 6, it is characterized in that, described target body is provided with the target electrode post, be provided with water cooling plant and magnet in the target body, the target body upper surface is provided with through hole, is provided with the groove of ccontaining water cooling plant and magnet in the target body of this through hole with the lower section, and described through hole is communicated with groove, capping is set on this through hole will be sealed in the described target body, and capping is provided with described magnet is fixed on adjustment screw in the described groove.
9. magnetron sputtering target as claimed in claim 8, it is characterized in that, described magnet is made of center magnet and peripheral magnet, center magnet is arranged on described target body middle part, peripheral magnet is arranged on the center magnet both sides, be provided with described water cooling plant between peripheral magnet and the center magnet, be provided with O-ring seals between this water cooling plant and the described capping, peripheral magnet is and the suitable toroidal magnet of described target face diameter, magnetic pole inner edge reversed cone angle wherein, center magnet is a cylindrical magnet, magnetic pole top reversed cone angle.
10. magnetron sputtering target as claimed in claim 8, it is characterized in that, described target top flange is a barrel-like structure, its top is provided with metal edge of a knife tongued and grooved flanges, on the metal edge of a knife tongued and grooved flanges target top cover is set, and seal between metal edge of a knife tongued and grooved flanges and the target top cover, the target top cover is provided with the water pipe head of described water cooling plant and the electrode contact of described target electrode post, also is provided with the pumping mouth that links to each other with vacuum extractor on the target top cover.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100844818A CN101550538A (en) | 2009-05-15 | 2009-05-15 | Magnetron sputtering target used for ultra high vacuum and process for preparing magnet in the target |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100844818A CN101550538A (en) | 2009-05-15 | 2009-05-15 | Magnetron sputtering target used for ultra high vacuum and process for preparing magnet in the target |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102977501A Division CN101935823B (en) | 2009-05-15 | 2009-05-15 | Magnetic control sputtering target for use in ultrahigh vacuum |
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| CN101550538A true CN101550538A (en) | 2009-10-07 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103602952A (en) * | 2013-11-13 | 2014-02-26 | 上海华力微电子有限公司 | Vacuum sputtering device |
| CN104694887A (en) * | 2013-12-09 | 2015-06-10 | 财团法人金属工业研究发展中心 | Coating equipment |
| CN108320832A (en) * | 2018-03-21 | 2018-07-24 | 东莞中子科学中心 | A kind of remote maintaining structure of spallation neutron target target body plug-in unit |
| CN108550411A (en) * | 2018-05-29 | 2018-09-18 | 河南太粒科技有限公司 | A kind of inserted target structure |
-
2009
- 2009-05-15 CN CNA2009100844818A patent/CN101550538A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103602952A (en) * | 2013-11-13 | 2014-02-26 | 上海华力微电子有限公司 | Vacuum sputtering device |
| CN103602952B (en) * | 2013-11-13 | 2015-11-25 | 上海华力微电子有限公司 | A kind of vacuum sputtering equipment |
| CN104694887A (en) * | 2013-12-09 | 2015-06-10 | 财团法人金属工业研究发展中心 | Coating equipment |
| CN108320832A (en) * | 2018-03-21 | 2018-07-24 | 东莞中子科学中心 | A kind of remote maintaining structure of spallation neutron target target body plug-in unit |
| CN108550411A (en) * | 2018-05-29 | 2018-09-18 | 河南太粒科技有限公司 | A kind of inserted target structure |
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Open date: 20091007 |