CN101546076B - TFT-LCD array substrate and color film substrate and manufacturing method thereof - Google Patents
TFT-LCD array substrate and color film substrate and manufacturing method thereof Download PDFInfo
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- CN101546076B CN101546076B CN2008101027862A CN200810102786A CN101546076B CN 101546076 B CN101546076 B CN 101546076B CN 2008101027862 A CN2008101027862 A CN 2008101027862A CN 200810102786 A CN200810102786 A CN 200810102786A CN 101546076 B CN101546076 B CN 101546076B
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Abstract
The invention relates to a TFT-LCD array substrate and a color film substrate. The array substrate comprises a grid line, a common electrode line and a data line which are formed on the array substrate, a TFT formed at the intersection between the grid line and the data line, and a pixel electrode positioned in the pixel area, wherein a second passivation layer through hole and a pixel electrode through hole which enable the common electrode line to be exposed out are arranged on the common electrode line and are used for being electrically connected with a transparent electrode on the color film substrate. The color film substrate comprises a black matrix, color resin, a cylindrical spacer and a transparent electrode which are formed on the color film substrate, wherein the cylindrical spacer is arranged at the position corresponding to the second passivation layer through hole on the array substrate, and the transparent electrode is covered on the cylindrical spacer. The invention changes the electric connection way of the transparent electrode on the color film substrate and the common electrode on the array substrate and improves the display quality of the TFT-LCD.
Description
Technical field
The present invention relates to a kind of Liquid crystal disply device and its preparation method, particularly a kind of TFT-LCD array base palte and color membrane substrates and manufacturing approach thereof.
Background technology
Thin-film transistor LCD device (Thin Film Transistor Liquid CrystalDisplay; Be called for short TFT-LCD) have characteristics such as volume is little, low in energy consumption, radiationless, manufacturing cost is relatively low, occupied leading position in current panel display apparatus market.To box and inject liquid crystal therein and form, cylindrical spacer is set between array base palte and the color membrane substrates usually, and to keep box thick by array base palte and color membrane substrates (colored filter) for TFT-LCD.
The prior art array base palte comprises grid line, data line and the public electrode wire that is formed on the substrate; Data line is vertical with grid line, and adjacent grid line and data line define a pixel region, and forms TFT at infall; TFT comprises gate electrode, gate insulation layer, active layer, source electrode, drain electrode and passivation layer; Wherein gate electrode is connected with grid line, and the source electrode is connected with data line, and the pixel electrode that is positioned at pixel region is connected with drain electrode through passivation layer via hole.The prior art color membrane substrates comprises black matrix and the color resin (red resin, green resin or blue resins) that is formed on the substrate; Each color resin is corresponding to a pixel region; On the distance of at interval or several color resins; Equally distributed cylindrical spacer is formed on the black matrix, is positioned at the top of TFT, and the cylindrical spacer top contacts with TFT.
Actual production and use show that there is following technological deficiency in prior art TFT-LCD structure:
(1) can only adopt indirect connected mode to be connected between the public electrode on transparency electrode and the array base palte on the color membrane substrates; Promptly must be through the outer peripheric circuit structure of pixel region; As adopt conductive silver glue or conductive metal balls etc.; And this syndeton causes electrostatic breakdown easily aborning, makes TFT-LCD produce defectives such as bright line is bad;
(2) because the contact position of cylindrical spacer and array base palte is in the extreme higher position (top of TFT) of array base palte; When substrate is squeezed or impact; Cylindrical spacer can move from the trend lower position, and is difficult to be returned to original position, thereby causes light leak bad; This bad phenomenon has had a strong impact on the yields of TFT-LCD, and display effect is also caused harmful effect.
Summary of the invention
The purpose of this invention is to provide a kind of TFT-LCD array base palte and color membrane substrates and manufacturing approach thereof; Electric connection structure through public electrode on transparency electrode and the array base palte on the change color membrane substrates; Effectively overcome the technological deficiency that existing TFT-LCD exists, improve the display quality of TFT-LCD.
To achieve these goals; The invention provides a kind of TFT-LCD array base palte; Comprise the grid line, public electrode wire, the data line that are formed on the substrate, be formed on the TFT of said grid line and data line infall and be positioned at the pixel electrode of pixel region; Be provided with second passivation layer via hole and the pixel electrode via hole that expose said public electrode wire on the said public electrode wire, be used for color membrane substrates on transparency electrode directly be connected; The center of said pixel electrode via hole is consistent with the center of said second passivation layer via hole, and the diameter of said pixel electrode via hole is greater than the diameter of cylindrical spacer on the said color membrane substrates and the said second passivation layer via hole contact position.
To achieve these goals, the present invention also provides a kind of TFT-LCD manufacturing method of array base plate, comprising:
To achieve these goals; The invention provides a kind of TFT-LCD color membrane substrates; Comprise the black matrix, color resin, cylindrical spacer and the transparency electrode that are formed on the substrate; Said cylindrical spacer be arranged on array base palte on consistent second passivation layer via hole and the corresponding position of pixel electrode via hole in center, and be coated with said transparency electrode; Said transparency electrode directly is connected with public electrode wire on the said array base palte greater than the said pixel electrode via hole of said cylindrical spacer and the diameter of the said second passivation layer via hole contact position and said second passivation layer via hole through diameter.
The side view of said cylindrical spacer is trapezoidal, and top width is 1 μ m～40 μ m, and the bottom width is 1 μ m～80 μ m.Further, the end shape of said cylindrical spacer and/or bottom are shaped as circle, ellipse, quadrilateral or polygon.
To achieve these goals, the present invention also provides a kind of TFT-LCD color membrane substrates manufacturing approach, comprising:
To achieve these goals; The invention provides a kind of thin-film transistor LCD device; Comprise array base palte and color membrane substrates to box; Said array base palte is provided with public electrode wire, and said color membrane substrates is provided with cylindrical spacer, is provided with second passivation layer via hole and the pixel electrode via hole that expose said public electrode wire on the said public electrode wire; The top that is coated with the cylindrical spacer of transparency electrode is pressed on the public electrode wire in said second passivation layer via hole, and the public electrode wire on the said array base palte directly is connected with transparency electrode on the said color membrane substrates; The center of said pixel electrode via hole is consistent with the center of said second passivation layer via hole, and the diameter of said pixel electrode via hole is greater than the diameter of said cylindrical spacer and the said second passivation layer via hole contact position.
The present invention proposes a kind of TFT-LCD array base palte and manufacturing approach thereof, a kind of TFT-LCD color membrane substrates and manufacturing approach and a kind of thin-film transistor LCD device; Through on array base palte, forming second passivation layer via hole that public electrode wire is come out; On color membrane substrates, form corresponding and be coated with the cylindrical spacer of layer of transparent electrode with the position of this second passivation layer via hole; Transparency electrode is electrically connected through public electrode on cylindrical spacer and the array base palte, makes cylindrical spacer form metastable supporting construction on the other hand.Technical scheme of the present invention has changed on the color membrane substrates electric connection mode of public electrode on the transparency electrode and array base palte; Increased the current potential linking number; Strengthen the electric conductivity between array base palte and the color membrane substrates greatly, saved the technologies such as conductive silver glue coating that existing TFT-LCD structure adopts simultaneously.It is poor that technical scheme of the present invention is held producing of cylindrical spacer top all around; Thereby form the metastable structure in a kind of top, when substrate be squeezed, when impacting, the mobile of cylindrical spacer is restricted; Not only strengthened stability of structure; Also increased the restoring force after moving, therefore reduced to move the light leak that causes, improved the display quality of TFT-LCD because of the cylindrical spacer position.
Through accompanying drawing and embodiment, technical scheme of the present invention is done further detailed description below.
Description of drawings
Fig. 1 a is the structural representation of TFT-LCD array base palte of the present invention;
Fig. 1 b be among Fig. 1 a A-A to sectional view;
Fig. 1 c be among Fig. 1 a B-B to sectional view;
Fig. 2 is the process flow diagram of TFT-LCD manufacturing method of array base plate of the present invention;
Fig. 3 a is the structural representation of TFT-LCD color membrane substrates of the present invention;
Fig. 3 b be among Fig. 3 a C-C to sectional view;
Fig. 4 is the process flow diagram of TFT-LCD color membrane substrates manufacturing approach of the present invention;
Fig. 5 is positioned at the sectional view at cylindrical spacer place for thin-film transistor LCD device of the present invention.
Description of reference numerals:
The 1-grid line; The 2-gate electrode; The 3-gate insulation layer;
The 4-active layer; The 5-data line; 6-source electrode;
The 7-drain electrode; The 8-passivation layer; 9-first passivation layer via hole;
The 10-pixel electrode; The 11-shield bars; The 12-public electrode wire;
13-second passivation layer via hole; 21-deceives matrix; The 22-color resin;
The 23-cylindrical spacer; The 24-transparency electrode; The 100-array base palte;
The 200-color membrane substrates.
Embodiment
Fig. 1 a is the structural representation of TFT-LCD array base palte of the present invention, Fig. 1 b be among Fig. 1 a A-A to sectional view, Fig. 1 c be among Fig. 1 a B-B to sectional view.Shown in Fig. 1 a, Fig. 1 b and Fig. 1 c, be formed with grid line 1, data line 5 and public electrode wire 12 on the TFT-LCD array base palte of the present invention, public electrode wire 12 is arranged between two grid lines 1; Data line 5 is vertical with grid line 1; Adjacent grid line 1 defines a pixel region with data line 5, and forms TFT at infall, and TFT is made up of gate electrode 2, gate insulation layer 3, active layer 4, source electrode 6 and drain electrode 7; Wherein gate electrode 2 is connected with grid line 1; Source electrode 6 is connected with data line 5, and the pixel electrode 10 that is positioned at pixel region is connected with drain electrode 7 through first passivation layer via hole 9, and the both sides of data line 5 also are formed with shield bars 11; Shield bars 11 is connected with public electrode wire 12; Be positioned at second passivation layer via hole 13 (with the pixel electrode via hole) on the public electrode wire 12 and expose public electrode wire 12, the second passivation layer via hole 13 and be used to place cylindrical spacer, and be electrically connected with transparency electrode on the color membrane substrates through cylindrical spacer.
Process for making through the TFT-LCD array base palte further specifies technique scheme below, and in following explanation, the alleged composition technology of the present invention comprises technologies such as photoresist coating, mask, exposure, etching.
At first; Adopt the method for sputter or thermal evaporation, substrate (like glass substrate or quartz base plate) go up deposition one layer thickness be 1000
～7000
the grid metal level.The grid metal level can use metal and alloys thereof such as Mo, Al, Cr, W, Ti, Ta, Cu; The grid metal level also can be made up of the multiple layer metal film; Adopt the gate electrode mask plate grid metal level to be carried out etching, on certain zone of substrate, form gate electrode 2, grid line 1, public electrode wire 12 and shield bars 11 figures through composition technology.Afterwards; After accomplishing gate electrode, grid line, public electrode wire and shield bars figure; Utilize chemical vapor deposition method consecutive deposition thickness on substrate be 1000
～6000
gate insulation layer 3 and thickness be 1000
～6000
active layer 4; Gate insulation layer can be selected silicon nitride, monox or silicon oxynitride etc. for use; Active layer 4 comprises semiconductor layer (like amorphous silicon layer) and doping semiconductor layer (like doped amorphous silicon layer); After adopting active layer mask board to explosure active layer is carried out dry etching; Form active layer pattern; Be the silicon isolated island, and the gate insulation layer between grid metal level and the active layer can play the effect that stops etching.Next; Adopt and preparation gate electrode and the similar method of grid line; On substrate deposit one deck be similar to the grid metal layer thickness be 1000
～7000
metallic film; Adopt the source-drain electrode mask plate on certain zone, to form data line 5, source electrode 6 and drain electrode 7; Source electrode 6 contacts with the two ends of active layer 4 respectively with drain electrode 7, forms the TFT raceway groove.Subsequently; On whole base plate the deposition one layer thickness be 1000
～6000
passivation layer 8; The material of passivation layer 8 is silicon nitride or silicon dioxide normally; Adopt the passivation layer mask plate through composition technology; Form first passivation layer via hole 9 in drain electrode 7 positions; Form second passivation layer via hole 13 in public electrode wire 12 positions; First passivation layer via hole 9 exposes drain electrode 7, the second passivation layer via hole 13 and exposes public electrode wire 12, and therefore the degree of depth of second passivation layer via hole 13 equals the thickness sum of passivation layer and gate insulation layer.At last; On whole base plate the deposition one layer thickness be 100
～1000
pixel electrode layer; Pixel electrode layer is generally tin indium oxide (ITO) or indium zinc oxide (IZO); Use the pixel electrode mask plate finally to form pixel electrode 10 through composition technology; The pixel electrode 10 that is positioned at second passivation layer via hole, 13 positions is formed with the pixel electrode via hole; And pixel electrode 10 is connected with drain electrode 7 through first passivation layer via hole 9; The top that second passivation layer via hole 13 is used to place cylindrical spacer makes public electrode wire pass through cylindrical spacer and is electrically connected with transparency electrode on the color membrane substrates.The center of pixel electrode via hole is consistent with the center of second passivation layer via hole, and diameter is greater than the diameter of the cylindrical spacer and the second passivation layer via hole contact position, less than the width of public electrode wire, purpose be make pixel electrode not with color membrane substrates on transparency electrode contact.This moment grid line 1, shield bars 11 and covering gate insulation course 3 and passivation layers 8 above the public electrode wire 12, and data line 5, source electrode 6 and be coated with the passivation layer 8 of same thickness above the drain electrode 7.In addition, the width of second passivation layer via hole 13 is greater than the width on cylindrical spacer top, is less than the width of public electrode wire simultaneously.Further; Second passivation layer via hole 13 or pixel electrode via hole can be circle, ellipse, quadrilateral or polygon; Be preferably quadrilateral or polygon, make the cylindrical spacer after the displacement that contacting of maximum area can be arranged with the edge of second passivation layer via hole 13, improve stability.
Can find out from technique scheme; Different with the prior art array base palte is; TFT-LCD array base palte of the present invention is provided with second passivation layer via hole and the pixel electrode via hole that is used to place cylindrical spacer on public electrode wire; And remove passivation layer and gate insulation layer fully in second passivation layer via hole and pixel electrode via hole place, public electrode wire is come out, make public electrode wire pass through cylindrical spacer and be electrically connected with transparency electrode on the color membrane substrates; Changed on the color membrane substrates electric connection mode of public electrode on the transparency electrode and array base palte; Increase the current potential linking number, strengthened the electric conductivity between array base palte and the color membrane substrates greatly, saved the technologies such as conductive silver glue coating that existing TFT-LCD structure adopts simultaneously.Further, because cylindrical spacer is arranged in second passivation layer via hole and the pixel electrode via hole, it is poor that producing all around of cylindrical spacer top held; Thereby form the metastable structure in a kind of top, when substrate be squeezed, when impacting, the mobile of cylindrical spacer is restricted; Not only strengthened stability of structure; Also increased the restoring force after moving, therefore reduced to move the light leak that causes, improved the display quality of TFT-LCD because of the cylindrical spacer position.
Fig. 1 a, Fig. 1 b and Fig. 1 c under the guiding theory of offering second passivation layer via hole on the public electrode wire, also can have the dot structure of other shape and figure for a kind of practical implementation structure of TFT-LCD array base palte of the present invention, repeat no more.
Fig. 2 is the process flow diagram of TFT-LCD manufacturing method of array base plate of the present invention, is specially:
Particularly; At first; Adopt the method for sputter or thermal evaporation; Substrate (like glass substrate or quartz base plate) go up deposition one layer thickness be 1000
～7000
the grid metal level; Adopt the gate electrode mask plate grid metal level to be carried out etching through composition technology; On certain zone of substrate, form gate electrode, grid line and public electrode line graph, what form simultaneously can also have the shield bars figure.Afterwards; Utilize chemical vapor deposition method consecutive deposition thickness on substrate be 1000
～6000
gate insulation layer and thickness be 1000
～6000
active layer; Active layer comprises semiconductor layer (like amorphous silicon layer) and doping semiconductor layer (like doped amorphous silicon layer); After adopting active layer mask board to explosure active layer is carried out dry etching; Form active layer pattern; Be the silicon isolated island, and the gate insulation layer between grid metal level and the active layer can play the effect that stops etching.Next; Adopt and preparation gate electrode and the similar method of grid line; On substrate deposit one deck be similar to the grid metal layer thickness be 1000
～7000
metallic film; Adopt the source-drain electrode mask plate on certain zone, to form data line, source electrode and drain electrode; Source electrode and drain electrode contact with the two ends of active layer respectively, form the TFT raceway groove.Subsequently; On whole base plate the deposition one layer thickness be 1000
～6000
passivation layer; Adopt the passivation layer mask plate to form first passivation layer via hole in the drain electrode position through composition technology; Form second passivation layer via hole at the public electrode line position; First passivation layer via hole exposes drain electrode; Second passivation layer via hole exposes public electrode wire, and therefore the degree of depth of second passivation layer via hole equals the thickness sum of passivation layer and gate insulation layer.At last; On whole base plate the deposition one layer thickness be 100
～1000
pixel electrode layer; Use the pixel electrode mask plate finally to form pixel electrode through composition technology; The pixel electrode 10 that is positioned at second passivation layer via hole, 13 positions is formed with the pixel electrode via hole; And pixel electrode is connected with drain electrode through first passivation layer via hole; Second passivation layer via hole is used to place the top of cylindrical spacer, makes public electrode wire pass through cylindrical spacer and is electrically connected with transparency electrode on the color membrane substrates.Covering gate insulation course and passivation layer above this moment grid line, and data line, public electrode wire and be coated with the passivation layer of same thickness above the shield bars.In addition; The center of pixel electrode via hole is consistent with the center of second passivation layer via hole; Diameter is greater than the diameter of the cylindrical spacer and the second passivation layer via hole contact position, less than the width of public electrode wire, purpose be make pixel electrode not with color membrane substrates on transparency electrode contact; The width of second passivation layer via hole is greater than the width on cylindrical spacer top, is less than the width of public electrode wire simultaneously.Further; Second passivation layer via hole or pixel electrode via hole can be circle, ellipse, quadrilateral or polygon; Be preferably quadrilateral or polygon, make the cylindrical spacer after the displacement that contacting of maximum area can be arranged with the edge of second passivation layer via hole 13, improve stability.
Can find out from technique scheme; Different with the prior art manufacturing method of array base plate is; TFT-LCD manufacturing method of array base plate of the present invention is provided with second passivation layer via hole and the pixel electrode via hole that is used to place cylindrical spacer on public electrode wire; And remove passivation layer and gate insulation layer fully in second passivation layer via hole and pixel electrode via hole place, the public electrode sweep trace is come out, make public electrode wire pass through cylindrical spacer and be electrically connected with transparency electrode on the color membrane substrates; Changed on the color membrane substrates electric connection mode of public electrode on the transparency electrode and array base palte; Increase the current potential linking number, strengthened the electric conductivity between array base palte and the color membrane substrates greatly, saved the technologies such as conductive silver glue coating that existing TFT-LCD structure adopts simultaneously.Further, because cylindrical spacer is arranged in second passivation layer via hole and the pixel electrode via hole, it is poor that producing all around of cylindrical spacer top held; Thereby form the metastable structure in a kind of top, when substrate be squeezed, when impacting, the mobile of cylindrical spacer is restricted; Not only strengthened stability of structure; Also increased the restoring force after moving, therefore reduced to move the light leak that causes, improved the display quality of TFT-LCD because of the cylindrical spacer position.
Fig. 2 under the guiding theory of offering second passivation layer via hole on the public electrode wire, also can have other technological process to form required array structure for a kind of practical implementation method of TFT-LCD manufacturing method of array base plate of the present invention, repeats no more.
Fig. 3 a is the structural representation of TFT-LCD color membrane substrates of the present invention, Fig. 3 b be among Fig. 3 a C-C to sectional view.Shown in Fig. 3 a and Fig. 3 b; Be formed with black matrix 21, color resin 22, cylindrical spacer 23 and transparency electrode 24 on the TFT-LCD color membrane substrates of the present invention; Color resin 22 comprises red resin, green resin and blue resins; Be formed on successively between the black matrix 21; Cylindrical spacer 23 is arranged on the color resin 22, and the position of second passivation layer via hole and pixel electrode via hole is corresponding on position and the TFT-LCD array base palte of the present invention, and transparency electrode 24 is formed on the whole base plate; The surface that comprises cylindrical spacer 23 makes on the TFT-LCD color membrane substrates of the present invention transparency electrode be electrically connected through public electrode wire on cylindrical spacer and the TFT-LCD array base palte of the present invention.Wherein, the side view of cylindrical spacer is trapezoidal, and top width is 1 μ m～40 μ m, and the bottom width is 1 μ m～80 μ m.Further; Cylindrical spacer top and/or bottom are shaped as circle, ellipse, quadrilateral or polygon; Be preferably quadrilateral or polygon, make the cylindrical spacer after the displacement that contacting of maximum area can be arranged with the edge of second passivation layer via hole 13, improve stability.
Process for making through the TFT-LCD color membrane substrates further specifies technique scheme below.
At first, use process for chemical vapor deposition of materials with via on substrate, prepare a layer thickness be 10000
～50000
black matrix layer.Black matrix material can adopt the single layer structure of chromium or chromium oxide formation, also can adopt the unitized construction of above-mentioned different materials.Through exposure and etching technics, on certain zone of substrate, form the figure of black matrix 21 with black matrix mask plate.Then, utilize to apply dispersion method successively on substrate applied thickness be 10000
～50000
red resin layer, green resin layer and blue resins layer.Resin bed is acrylic acid class photoresist or other carboxylic acid type color pigments resins normally.Through exposure and developing process, on certain zone of substrate, form color resin 22 figures of red resin, green resin and blue resins.Certainly, above-mentioned manufacture process also can be to form color resin 22 figures earlier, and then forms black matrix 21 figures.Subsequently, adopt with black matrix layer and form similar method, deposition one deck cylindrical spacer resin bed uses the cylindrical spacer mask plate on substrate, through composition technology, finally forms cylindrical spacer 23.In the present embodiment, the side view of cylindrical spacer is trapezoidal, and top width is 1 μ m～40 μ m, and the bottom width is 1 μ m～80 μ m.Further, cylindrical spacer top and/or bottom are shaped as circle, ellipse, quadrilateral or polygon, are preferably quadrilateral or polygon.At last; Deposition layer of transparent electrode layer is as transparency electrode 24 on whole base plate, transparency electrode adopt usually thickness be 1000
～5000
ITO or IZO.
Can find out from technique scheme; Different with the prior art color membrane substrates is; The cylindrical spacer of TFT-LCD color membrane substrates of the present invention is formed on the color resin; Corresponding with the position of second passivation layer via hole on the TFT-LCD array base palte of the present invention, and be coated with the layer of transparent electrode, transparency electrode is electrically connected through public electrode on cylindrical spacer and the TFT-LCD array base palte of the present invention; Changed on the color membrane substrates electric connection mode of public electrode on the transparency electrode and array base palte; Increase the current potential linking number, strengthened the electric conductivity between array base palte and the color membrane substrates greatly, saved the technologies such as conductive silver glue coating that existing TFT-LCD structure adopts simultaneously.
Fig. 3 a and Fig. 3 b are a kind of practical implementation structure of TFT-LCD color membrane substrates of the present invention; Correspondence position at TFT-LCD array base palte second passivation layer via hole of the present invention and pixel electrode via hole is provided with under the guiding theory of cylindrical spacer; The color membrane structure of other shape and figure also can be arranged, repeat no more.
Fig. 4 is the process flow diagram of TFT-LCD color membrane substrates manufacturing approach of the present invention, is specially:
Particularly; At first; Use process for chemical vapor deposition of materials with via on substrate, prepare a layer thickness be 10000
～50000
black matrix layer; Through exposure and etching technics, on certain zone of substrate, form the figure of black matrix with black matrix mask plate.Then; Utilize to apply dispersion method successively on substrate applied thickness be 10000
～50000
red resin layer, green resin layer and blue resins layer; Through exposure and developing process, on certain zone of substrate, form the color resin figure of red resin, green resin and blue resins.Certainly, above-mentioned flow process also can be to form the color resin figure earlier, and then forms black matrix figure.Subsequently, adopt with black matrix layer and form similar method, deposition one deck cylindrical spacer resin bed uses the cylindrical spacer mask plate on substrate, through composition technology, finally forms cylindrical spacer.In the present embodiment, the side view of cylindrical spacer is trapezoidal, and top width is 1 μ m～40 μ m, and the bottom width is 1 μ m～80 μ m.Further, cylindrical spacer top and/or bottom are shaped as circle, ellipse, quadrilateral or polygon, are preferably quadrilateral or polygon.At last; Deposition layer of transparent electrode layer is as transparency electrode on whole base plate, transparency electrode adopt usually thickness be 1000
～5000
ITO or IZO.
Can find out from technique scheme; Different with prior art color membrane substrates manufacturing approach is; TFT-LCD color membrane substrates manufacturing approach of the present invention with cylindrical spacer be formed on array base palte on second passivation layer via hole and the corresponding position of pixel electrode via hole; The top of cylindrical spacer can be pressed on the public electrode wire in this second passivation layer via hole and the pixel electrode via hole; Owing to be coated with the layer of transparent electrode on the cylindrical spacer; Transparency electrode is electrically connected through public electrode on cylindrical spacer and the array base palte, changed on the color membrane substrates electric connection mode of public electrode on the transparency electrode and array base palte, increased the current potential linking number; Strengthen the electric conductivity between array base palte and the color membrane substrates greatly, saved the technologies such as conductive silver glue coating that existing TFT-LCD structure adopts simultaneously.
Fig. 4 is a kind of practical implementation method of TFT-LCD color membrane substrates manufacturing approach of the present invention; Correspondence position at array base palte second passivation layer via hole and pixel electrode via hole is provided with under the guiding theory that is coated with the layer of transparent electrode on cylindrical spacer and the cylindrical spacer; Also can there be other technological process to form required array structure, repeats no more.
Fig. 5 is positioned at the sectional view at cylindrical spacer place for thin-film transistor LCD device of the present invention.As shown in Figure 5; Thin-film transistor LCD device of the present invention (TFT-LCD) comprises the array base palte 100 and color membrane substrates 200 to box; Array base palte 100 is provided with public electrode wire 12; Color membrane substrates 200 is provided with cylindrical spacer 23; Be provided with second passivation layer via hole 13 and pixel electrode via hole that expose public electrode wire 12 on the public electrode wire 12, the top that is coated with the cylindrical spacer 23 of transparency electrode 24 is pressed on the public electrode wire 12 in second passivation layer via hole 13 and the pixel electrode via hole, and the public electrode wire 12 on the array base palte 100 is electrically connected with transparency electrode 24 on the color membrane substrates 200 through cylindrical spacer 23.
In the technique scheme; Array base palte 100 of the present invention can adopt the structure of TFT-LCD array base palte of the present invention shown in earlier figures 1a, Fig. 1 b and Fig. 1 c; Also can adopt the dot structure of other shape and figure; Color membrane substrates 200 of the present invention can adopt the structure of TFT-LCD color membrane substrates of the present invention shown in earlier figures 3a and Fig. 3 b; Also can adopt the color membrane structure of other shape and figure, the shape of second passivation layer via hole, pixel electrode via hole and cylindrical spacer, structural parameters are also identical with aforementioned structure.Repeat no more.Because the contact position of cylindrical spacer and array base palte changes, in order to keep same, need height increase with cylindrical spacer to box thickness, added value is identical with the end difference of TFT.Can find out from structure shown in Figure 5; Be in all exist on each direction around the cylindrical spacer on the public electrode wire 2000
～10000
end poor; The height of cylindrical spacer itself is 2 μ m～4 μ m; Be equivalent to 20000
～40000
; Consider the requirement of aligning accuracy, the distance of cylindrical spacer apart from all around is about 1 μ m～10 μ m.Need to prove in addition, when carrying out PI glue coating process, the zone that needs on the PI transfer plate, to leave some space in advance, the position consistency of second passivation layer via hole and pixel electrode via hole on cylindrical spacer position and the array base palte on its position and the color membrane substrates.After PI glue coating process finishes, on the color membrane substrates on cylindrical spacer position and the array base palte the second passivation layer via hole position do not have PI glue.
Can find out from technique scheme; Thin-film transistor LCD device of the present invention is through forming second passivation layer via hole and the pixel electrode via hole that the public electrode sweep trace is come out on array base palte; On color membrane substrates, form corresponding and be coated with the cylindrical spacer of layer of transparent electrode with the position of this second passivation layer via hole and pixel electrode via hole; Transparency electrode is electrically connected through public electrode on cylindrical spacer and the array base palte, makes cylindrical spacer form metastable supporting construction on the other hand.Thin-film transistor LCD device structural change of the present invention the electric connection mode of public electrode on transparency electrode and the array base palte on the color membrane substrates; Increased the current potential linking number; Strengthen the electric conductivity between array base palte and the color membrane substrates greatly, saved the technologies such as conductive silver glue coating that existing TFT-LCD structure adopts simultaneously.It is poor that thin-film transistor LCD device structure of the present invention is held producing of cylindrical spacer top all around; Thereby form the metastable structure in a kind of top, when substrate be squeezed, when impacting, the mobile of cylindrical spacer is restricted; Not only strengthened stability of structure; Also increased the restoring force after moving, therefore reduced to move the light leak that causes, improved the display quality of TFT-LCD because of the cylindrical spacer position.
What should explain at last is: above embodiment is only unrestricted in order to technical scheme of the present invention to be described; Although the present invention is specified with reference to preferred embodiment; Those of ordinary skill in the art is to be understood that; Can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and the scope of technical scheme of the present invention.
Claims (17)
1. TFT-LCD array base palte; Comprise the grid line, public electrode wire, the data line that are formed on the substrate, be formed on the TFT of said grid line and data line infall and be positioned at the pixel electrode of pixel region; It is characterized in that; Be provided with second passivation layer via hole and the pixel electrode via hole that expose said public electrode wire on the said public electrode wire, be used for color membrane substrates on transparency electrode directly be connected; The center of said pixel electrode via hole is consistent with the center of said second passivation layer via hole, and the diameter of said pixel electrode via hole is greater than the diameter of cylindrical spacer on the said color membrane substrates and the said second passivation layer via hole contact position.
2. TFT-LCD array base palte according to claim 1 is characterized in that, said second passivation layer via hole or pixel electrode via hole be shaped as circle, ellipse, quadrilateral or polygon.
3. TFT-LCD array base palte according to claim 1 and 2; It is characterized in that; Said TFT comprises gate electrode, gate insulation layer, active layer, source electrode, drain electrode and passivation layer, offers first passivation layer via hole on the passivation layer, and said gate electrode is connected with said grid line; Said source electrode is connected with said data line, and said drain electrode is connected with said pixel electrode through said first passivation layer via hole.
4. a TFT-LCD manufacturing method of array base plate is characterized in that, comprising:
Step 11, on substrate deposition one deck grid metal level, form gate electrode, grid line, shield bars and public electrode line graph through composition technology;
Step 12, on the substrate of completing steps 11 successive sedimentation gate insulation layer and active layer, form active layer pattern through composition technology;
Step 13, on the substrate of completing steps 12 deposition layer of metal film, form data line, source electrode and drain electrode figure through composition technology;
Step 14, on the substrate of completing steps 13 deposition one deck passivation layer, above said drain electrode, forms first passivation layer via hole through composition technology, formation second passivation layer via hole above said public electrode wire;
Step 15, on the substrate of completing steps 14 deposition one deck pixel electrode layer; Form pixel electrode through composition technology; And at said second passivation layer via hole place formation pixel electrode via hole, and pixel electrode is connected with said drain electrode through said first passivation layer via hole; The center of said pixel electrode via hole is consistent with the center of said second passivation layer via hole, and the diameter of said pixel electrode via hole is greater than the diameter of cylindrical spacer on the color membrane substrates and the said second passivation layer via hole contact position.
5. TFT-LCD color membrane substrates; Comprise the black matrix, color resin, cylindrical spacer and the transparency electrode that are formed on the substrate; It is characterized in that; Said cylindrical spacer be arranged on array base palte on consistent second passivation layer via hole and the corresponding position of pixel electrode via hole in center, and be coated with said transparency electrode; Said transparency electrode directly is connected with public electrode wire on the said array base palte greater than the said pixel electrode via hole of said cylindrical spacer and the diameter of the said second passivation layer via hole contact position and said second passivation layer via hole through diameter.
6. TFT-LCD color membrane substrates according to claim 5 is characterized in that, the side view of said cylindrical spacer is trapezoidal, and top width is 1 μ m～40 μ m, and the bottom width is 1 μ m～80 μ m.
7. according to claim 5 or 6 described TFT-LCD color membrane substrates, it is characterized in that the end shape of said cylindrical spacer and/or bottom are shaped as circle, ellipse, quadrilateral or polygon.
8. a TFT-LCD color membrane substrates manufacturing approach is characterized in that, comprising:
Step 21, on substrate, form black matrix figure and color resin figure;
Step 22, on the substrate of completing steps 21 deposition cylindrical spacer resin bed, through composition technology, form the cylindrical spacer figure; Said cylindrical spacer be formed on array base palte on consistent second passivation layer via hole and the corresponding position of pixel electrode via hole in center;
Step 23, on the substrate of completing steps 22 deposition layer of transparent electrode layer; Make said cylindrical spacer surface coverage that transparency electrode arranged, said transparency electrode directly is connected with public electrode wire on the said array base palte greater than the said pixel electrode via hole of said cylindrical spacer and the diameter of the said second passivation layer via hole contact position and said second passivation layer via hole through diameter.
9. TFT-LCD color membrane substrates manufacturing approach according to claim 8 is characterized in that said step 21 is specially: the black matrix layer of deposition one deck on substrate forms black matrix figure through composition technology; On the substrate of accomplishing above-mentioned steps, form red resin, green resin and blue resins figure.
10. TFT-LCD color membrane substrates manufacturing approach according to claim 8 is characterized in that said step 21 is specially: on substrate, form red resin, green resin and blue resins figure; The black matrix layer of deposition one deck forms black matrix figure through composition technology on the substrate of accomplishing above-mentioned steps.
11. according to claim 9 or 10 described TFT-LCD color membrane substrates manufacturing approaches; It is characterized in that said formation cylindrical spacer figure is specially: forming side view and be trapezoidal, top width is that 1 μ m～40 μ m, bottom width are the cylindrical spacer figure of 1 μ m～80 μ m.
12., it is characterized in that said formation cylindrical spacer figure is specially according to claim 9 or 10 described TFT-LCD color membrane substrates: form end shape and/or bottom and be shaped as circle, ellipse, quadrilateral or polygonal cylindrical spacer figure.
13. thin-film transistor LCD device; Comprise array base palte and color membrane substrates to box; Said array base palte is provided with public electrode wire; Said color membrane substrates is provided with cylindrical spacer, it is characterized in that, is provided with second passivation layer via hole and the pixel electrode via hole that expose said public electrode wire on the said public electrode wire; The top that is coated with the cylindrical spacer of transparency electrode is pressed on the public electrode wire in said second passivation layer via hole, and the public electrode wire on the said array base palte directly is connected with transparency electrode on the said color membrane substrates; The center of said pixel electrode via hole is consistent with the center of said second passivation layer via hole, and the diameter of said pixel electrode via hole is greater than the diameter of said cylindrical spacer and the said second passivation layer via hole contact position.
14. thin-film transistor LCD device according to claim 13; It is characterized in that; Said array base palte also comprises the grid line, the data line that are formed on the substrate, be formed on the TFT of said grid line and data line infall and be positioned at the pixel electrode of pixel region; Said TFT comprises gate electrode, gate insulation layer, active layer, source electrode, drain electrode and passivation layer, offers first passivation layer via hole on the passivation layer, and said gate electrode is connected with said grid line; Said source electrode is connected with said data line, and said drain electrode is connected with said pixel electrode through said first passivation layer via hole.
15. thin-film transistor LCD device according to claim 13 is characterized in that, said color membrane substrates also comprises black matrix and the color resin that is formed on the substrate, and said cylindrical spacer is arranged on the said color resin.
16. according to claim 13,14 or 15 described thin-film transistor LCD devices; It is characterized in that; Said second passivation layer via hole or pixel electrode via hole be shaped as circle, ellipse, quadrilateral or polygon, the end shape of said cylindrical spacer and/or bottom are shaped as circle, ellipse, quadrilateral or polygon.
17., it is characterized in that the side view of said cylindrical spacer is trapezoidal according to claim 13,14 or 15 described thin-film transistor LCD devices, top width is 1 μ m～40 μ m, the bottom width is 1 μ m～80 μ m.
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| CN102116960B (en) * | 2009-12-30 | 2013-01-09 | 京东方科技集团股份有限公司 | Color film substrate and manufacturing method thereof |
| GB2490712B (en) * | 2011-05-11 | 2018-07-04 | Flexenable Ltd | Pixellated display devices |
| CN103107140B (en) * | 2013-01-28 | 2016-01-13 | 京东方科技集团股份有限公司 | A kind of thin-film transistor array base-plate and preparation method thereof |
| CN103336391B (en) * | 2013-06-28 | 2016-02-03 | 深圳市华星光电技术有限公司 | Display panels |
| CN103972243B (en) * | 2014-04-24 | 2017-03-29 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display device |
| CN104216164B (en) * | 2014-09-01 | 2017-02-15 | 京东方科技集团股份有限公司 | Colored-film substrate, manufacturing method thereof and liquid crystal display panel |
| CN104765208B (en) * | 2015-03-17 | 2017-10-17 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN105810689B (en) | 2016-03-31 | 2019-04-02 | 京东方科技集团股份有限公司 | Array substrate and its manufacturing method, display device |
| TWI592718B (en) * | 2016-08-17 | 2017-07-21 | 友達光電股份有限公司 | Pixel structure and display pannel applying the same |
| CN106449654B (en) * | 2016-10-14 | 2019-12-31 | 京东方科技集团股份有限公司 | Substrate, preparation method thereof and display device |
| CN106997877A (en) * | 2017-04-14 | 2017-08-01 | 京东方科技集团股份有限公司 | Array base palte and its manufacture method, display panel and display device |
| CN107845662B (en) * | 2017-10-27 | 2020-06-26 | 京东方科技集团股份有限公司 | Color film substrate, manufacturing method thereof and display device |
| CN109031814B (en) * | 2018-09-06 | 2021-06-18 | Tcl华星光电技术有限公司 | Liquid crystal display and array substrate thereof |
| CN109283753A (en) * | 2018-10-30 | 2019-01-29 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN109633996B (en) * | 2018-11-28 | 2022-05-10 | 南京京东方显示技术有限公司 | Liquid crystal display device |
| CN111103735A (en) * | 2020-01-10 | 2020-05-05 | Oppo广东移动通信有限公司 | Horizontal electric field type display panel and electronic device |
| CN114545698A (en) * | 2020-11-25 | 2022-05-27 | 北京京东方光电科技有限公司 | Writing panel, preparation method thereof and writing board |
| CN114690490A (en) * | 2022-03-18 | 2022-07-01 | 武汉华星光电技术有限公司 | Array substrate and display panel thereof |
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