CN101544118A - Liquid ejecting head, liquid ejecting apparatus, and actuator - Google Patents
Liquid ejecting head, liquid ejecting apparatus, and actuator Download PDFInfo
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- CN101544118A CN101544118A CNA2009101326017A CN200910132601A CN101544118A CN 101544118 A CN101544118 A CN 101544118A CN A2009101326017 A CNA2009101326017 A CN A2009101326017A CN 200910132601 A CN200910132601 A CN 200910132601A CN 101544118 A CN101544118 A CN 101544118A
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Abstract
The invention provides a liquid ejecting head, a liquid ejecting apparatus and an actuator capable of improving shift characteristics of piezoelectric element and preventing the piezoelectric layer from damage. A end face of a piezoelectric layer (70) is composed of inclined planes in a incline mode of end of a lower electrode side is outsider than a upper electrode side. The lower electrode (60) for composing piezoelectric elements has a width smaller than the width of the pressure generating chambers (12). The piezoelectric layer (70) has a larger width than the lower electrode (60) to cover end faces of the lower electrode (60). The vibration plate (50) has a top layer formed of a titanium oxide insulator film (52). The lower electrode has a top layer formed of a lanthanum nickel oxide orientation control layer (62). The orientation control layer (62) and at least part of the piezoelectric layer (70a) disposed on the orientation control layer (62) are formed of perovskite crystals having a (111) preferred orientation.
Description
Technical field
The present invention relates to by the displacement of piezoelectric element from jet head liquid, the liquid injection apparatus of jet droplets and actuator with piezoelectric element.
Background technology
In ink jet recording head as the representative example of the jet head liquid of liquid droplets, the ink jet recording head that has for example has piezoelectric element, this piezoelectric element constitutes by be arranged on bottom electrode, piezoelectric body layer and the top electrode that the stream that is formed with pressure generating chamber forms a face side of substrate via oscillating plate, described ink jet recording head is exerted pressure in pressure generating chamber by the displacement of this piezoelectric element, thus from the nozzle ejection ink droplet.The shift characteristics of the employed piezoelectric element of known this ink jet recording head can change a lot according to the crystalline orientation of piezoelectric body layer.And the crystallization that has proposed by making the piezoelectric body layer that constitutes piezoelectric element is the multiple piezoelectric element (for example, with reference to patent documentation 1) that predetermined orientation improves shift characteristics.
In the piezoelectric element that is made of bottom electrode, piezoelectric body layer and top electrode like this, the end face of the piezoelectric body layer of the piezoelectric element that has forms with the inclined plane that has a down dip towards its lateral (taper surface) (for example, with reference to patent documentation 2).
For example, in the structure that patent documentation 2 is put down in writing, though on part (hereinafter referred to as tapered portion), do not form top electrode as the inclined plane of piezoelectric body layer, but, bottom electrode forms continuously because striding a plurality of piezoelectric elements, therefore have stronger driving electric field action in the tapered portion of this piezoelectric body layer, thereby might cause the tapered portion of piezoelectric body layer to wreck.
In addition, in the structure that patent documentation 1 and patent documentation 2 are put down in writing, the bottom electrode that constitutes piezoelectric element is striden a plurality of piezoelectric elements and formation continuously, but for example also there is bottom electrode to be patterned the piezoelectric element (for example, with reference to patent documentation 3) that (patterning) and piezoelectric body layer are formed continuously to the bottom electrode outside according to each piezoelectric element.
Patent documentation 1: the Japanese documentation spy opens the 2004-66600 communique;
Patent documentation 2: the Japanese documentation spy opens the 2007-118193 communique;
Patent documentation 3: the Japanese documentation spy opens the 2000-32653 communique.
Summary of the invention
In the piezoelectric element that such patent documentation 3 is put down in writing,, therefore can not cause piezoelectric body layer to destroy owing to do not have strong driving electric field action in the tapered portion of piezoelectric body layer.But, in the structure that such patent documentation 3 is put down in writing, for example when the piezoelectric body layer of wanting to adopt patent documentation 1 to be put down in writing improves the shift characteristics of piezoelectric element, may be because change has taken place the crystallinity of the piezoelectric body layer of the piezoelectric body layer on the bottom electrode and the bottom electrode outside (on the oscillating plate), driven piezoelectric element at present near the piezoelectric body layer the electrode tip may wreck.
This problem does not exist only in the ink jet recording head that sprays ink droplet, sprays in the jet head liquid of other drops to exist too, is not only jet head liquid in addition, will exist equally so long as have the actuator of piezoelectric element.
The present invention finishes in view of such situation, and its purpose is, provides a kind of and can improve the shift characteristics of piezoelectric element and can suppress the ruined jet head liquid of piezoelectric body layer, liquid injection apparatus and actuator.
What address the above problem the invention provides a kind of jet head liquid, this jet head liquid comprises that stream forms substrate and piezoelectric element, form at described stream and to be set side by side with a plurality of pressure generating chamber that is communicated with the nozzle of liquid droplets respectively on the substrate, described piezoelectric element comprises the bottom electrode that is arranged on a face side of described stream formation substrate via oscillating plate, piezoelectric body layer and top electrode, the end face of described piezoelectric body layer is made of the inclined plane that tilts to its outside, the described bottom electrode that constitutes each piezoelectric element forms with the narrow width of width than described pressure generating chamber, and described piezoelectric body layer forms with the width wideer than the width of described bottom electrode, thereby the end face of described bottom electrode is covered by described piezoelectric body layer, the top layer of described oscillating plate is made of insulator film, and described insulator film is by titanium oxide (TiO
x) form, the top layer of described bottom electrode is made of the orientation key-course, and described orientation key-course is by nickel acid lanthanum (LaNi
yO
x) form, and, described orientation key-course and at least should orientation key-course on described piezoelectric body layer form and crystal plane direction edge (111) preferred orientation by the crystallization of perovskite structure.In the invention described above,, can increase the shift amount of piezoelectric element and can suppress the destruction of piezoelectric body layer is improved durability by improving the crystallinity of piezoelectric body layer.
Here, preferably be formed with metal level between described oscillating plate and described piezoelectric body layer, described metal level is not continuous with described bottom electrode, and at least a portion on the top layer of described metal level is made of described orientation key-course.Thus, the crystallinity that does not form the piezoelectric body layer on the non-active portion zone of bottom electrode also is improved, so piezoelectric body layer is whole can coordinate displacement, thereby can guarantee shift amount.Therefore, can realize further that the high-speed driving of piezoelectric element and the destruction that can further suppress piezoelectric body layer improves durability.
In addition, the crystal structure of described piezoelectric body layer is preferably rhombohedral crystal, tetragonal or monoclinic crystal.In addition, the described piezoelectric body layer on the described at least orientation key-course is preferably formed by column crystallization.And the described piezoelectric body layer on the described insulator film is also preferably formed by column crystallization.Thus, can suppress more reliably that piezoelectric body layer is destroyed along with the driving repeatedly of piezoelectric element.
In addition, the end face of the described bottom electrode that is covered by described piezoelectric body layer is preferably the inclined plane that tilts to its outside.Thus, the crystallinity that is formed on the piezoelectric body layer on the end face part of bottom electrode further improves.Therefore, can suppress reliably further that piezoelectric body layer is destroyed along with the driving repeatedly of piezoelectric element.
In addition, described bottom electrode preferably has conductive layer in the lower floor of described orientation key-course, and described conductive layer is formed than the low material of described orientation key-course by resistivity.Thus, even drive a plurality of piezoelectric elements simultaneously, also can obtain enough electric current deliverabilities.Therefore, can make the shift characteristics homogenising of each piezoelectric element that is set up in parallel.
In addition, be provided with under the situation of conductive layer, described conductive layer is preferably covered by described orientation key-course.Thus, owing to have only the orientation key-course of bottom electrode to contact, therefore further improved the crystallinity of piezoelectric body layer reliably with piezoelectric body layer.
In addition, described conductive layer is preferably formed by the oxide of metal material, metal material or their alloy.Described metal material preferably includes especially and is selected from least a in following group, and described group comprises copper, aluminium, tungsten, platinum, iridium, ruthenium, silver, nickel, osmium, molybdenum, rhodium, titanium, magnesium, cobalt.By using these materials, can further obtain above-mentioned electric current deliverability reliably.
In addition, described piezoelectric body layer is a main component with lead zirconate titanate (PZT) preferably.Thus, piezoelectric element has good shift characteristics.
In addition, the end face of described piezoelectric body layer is preferably had the diaphragm covering of moisture resistance.In addition, the end face of described piezoelectric body layer is preferably covered by described top electrode.Thus, can suppress moisture etc. in the atmosphere to the destruction of piezoelectric body layer.
In addition, there is no particular limitation for the electrode structure of piezoelectric element, described bottom electrode can independently be provided with and be constituted the electrode special of described piezoelectric element accordingly with described pressure generating chamber, and described top electrode can be in the common electrode of striding described pressure generating chamber on the direction and being provided with and constituting described piezoelectric element continuously that is set up in parallel of described pressure generating chamber.Thus, regardless of the electrode structure of piezoelectric element, all can improve the shift characteristics of piezoelectric element and can suppress the destroyed durability that improves of piezoelectric body layer.
In addition, the invention provides a kind of liquid injection apparatus with jet head liquid as described above.According to this invention, can realize improving the liquid injection apparatus of the reliability of head.
And, the invention provides a kind of actuator, this actuator involving vibrations plate and piezoelectric element, described oscillating plate is arranged on a face side of substrate, described piezoelectric element comprises bottom electrode, piezoelectric body layer and the top electrode that is arranged on the described oscillating plate, the end face of described piezoelectric body layer is made of the inclined plane that tilts to its outside, described piezoelectric body layer forms with the width wideer than the width of described bottom electrode, the end face of described bottom electrode is covered by described piezoelectric body layer, the top layer of described oscillating plate is made of insulator film, and described insulator film is by titanium oxide (TiO
x) form, the top layer of described bottom electrode is made of the orientation key-course, and described orientation key-course is by nickel acid lanthanum (LaNi
yO
x) form, and, described orientation key-course and at least should orientation key-course on described piezoelectric body layer form and crystal plane direction edge (111) preferred orientation by the crystallization of perovskite structure.
According to the invention described above, by improving the crystallinity of piezoelectric body layer, the actuator that can realize increasing the shift amount of piezoelectric element and suppress the destruction of piezoelectric body layer has been improved durability.
Here, preferably be formed with metal level between described oscillating plate and described piezoelectric body layer, described metal level is not continuous with described bottom electrode, and at least a portion on the top layer of described metal level is made of described orientation key-course.Thus, the crystallinity that does not form the piezoelectric body layer on the non-active portion zone of bottom electrode also is improved, the displacement of piezoelectric body layer Total tune, thus can guarantee shift amount.Therefore, the destruction that can realize suppressing piezoelectric body layer has further been improved the actuator of durability.
Description of drawings
Fig. 1 is the exploded perspective view of the record head of embodiment 1;
Fig. 2 A and Fig. 2 B are respectively the plane and the sectional views of the record head of embodiment 1;
Fig. 3 is the sectional view of major part that the record head of embodiment 1 is shown;
Fig. 4 A～Fig. 4 C is the sectional view of manufacturing process that the record head of embodiment 1 is shown;
Fig. 5 A～Fig. 5 C is the sectional view of manufacturing process that the record head of embodiment 1 is shown;
Fig. 6 A～Fig. 6 C is the sectional view of manufacturing process that the record head of embodiment 1 is shown;
Fig. 7 A～Fig. 7 C is the sectional view of manufacturing process that the record head of embodiment 1 is shown;
Fig. 8 is the sectional view of major part that the record head of embodiment 2 is shown;
Fig. 9 is the exploded perspective view of the record head of embodiment 3;
Figure 10 A and Figure 10 B are respectively the plane and the sectional views of the record head of embodiment 3;
Figure 11 is the sectional view of major part that the record head of embodiment 3 is shown;
Figure 12 A and Figure 12 B are respectively the plane and the sectional views of the record head of embodiment 4;
Figure 13 is the synoptic diagram of the tape deck of an embodiment.
The specific embodiment
Below, explain the present invention according to embodiment.
(embodiment 1)
Fig. 1 is the exploded perspective view that the brief configuration of ink jet recording head is shown, and this ink jet recording head is an example of the jet head liquid of embodiment of the present invention 1, and Fig. 2 A and Fig. 2 B are respectively the plane of Fig. 1 and A-A ' sectional view of this plane.
As shown in the figure, it is that the monocrystalline silicon substrate of (110) forms by crystal plane direction in the present embodiment that stream forms substrate 10, is formed with the elastic membrane 51 that is made of oxide-film on one face.On stream forms substrate 10, be divided and face is set up in parallel on its width by a plurality of pressure generating chamber 12 that elastic membrane 51 constitutes by spaced walls 11.
An end side on the length direction of the pressure generating chamber 12 on the stream formation substrate 10 is provided with ink feed path 13 and the communication path 14 of being divided and being communicated with each pressure generating chamber 12 by spaced walls 11.Arranged outside at communication path 14 has the interconnecting part 15 that is communicated with each communication path 14.This interconnecting part 15 is communicated with the reservoir 32 of protective substrate 30 described later, and formation is as the part of the reservoir 100 of the common ink chamber (liquid chamber) of each pressure generating chamber 12.
Here, ink feed path 13 forms in the narrow mode of sectional area of sectional area ratio pressure generating chamber 12, and this ink feed path 13 will remain fixing to the flow path resistance of the ink of pressure generating chamber 12 inflows from interconnecting part 15.For example, ink feed path 13 is by forming with the narrow width of the width of specific pressure generating chamber 12 at the stream that dwindles pressure generating chamber 12 sides between reservoir 100 and each the pressure generating chamber 12 on the width.In the present embodiment, by having formed the ink feed path, still also can form the ink feed path by the width that dwindles stream from both sides from the one-sided width that dwindles stream.In addition, also can not dwindle the width of stream and form the ink feed path by the thickness that dwindles stream.In addition, the space that marks off between ink feed path 13 and the communication path 15 is set, has formed each communication path 14 thus by the spaced walls 11 of the both sides on the width of pressure generating chamber 12 is extended to interconnecting part 15 sides.
Material as stream formation substrate 10 has used monocrystalline silicon substrate in the present embodiment, but has been not limited thereto certainly, for example also can use glass ceramics, stainless steel etc.
On the other hand, piezoelectric element 300 is formed on the side opposite with opening surface that above-mentioned stream forms substrate 10 via oscillating plate 50.Here, the oscillating plate 50 that this piezoelectric element 300 and the driving by piezoelectric element 300 are shifted is collectively referred to as actuator.In the present embodiment, on stream formation substrate 10, be formed with elastic membrane 51 as mentioned above, on this elastic membrane 51, be formed with by titanium oxide (TiO
x) insulator film 52 that forms, constituted oscillating plate 50 by this elastic membrane 51 and insulator film 52.
On oscillating plate 50 (insulator film 52), be formed with the piezoelectric element 300 that constitutes by lower electrode film 60, piezoelectric body layer 70 and upper electrode film 80.Here, piezoelectric element 300 not only comprise have lower electrode film 60, the part of piezoelectric body layer 70 and upper electrode film 80, but also comprise the part that has piezoelectric body layer 70 at least.Usually, with any electrode of piezoelectric element 300 as common electrode, with another electrode with piezoelectric body layer 70 according to each pressure generating chamber 12 patterning with as electrode special.And, will constitute and be called the active portion 320 of piezoelectrics by electrode that is patterned and piezoelectric body layer 70 here by electrostrictive zone takes place to two electrode application voltage.
Here, the structure to the piezoelectric element 300 of present embodiment is described in detail.As shown in Figure 3, the lower electrode film 60 that constitutes piezoelectric element 300 is set at each zone relative with each pressure generating chamber 12 with the narrow width of the width of specific pressure generating chamber 12, and has constituted the electrode special of each piezoelectric element 300.And the end face of lower electrode film 60 forms towards the inclined plane of its outside inclination.In addition, lower electrode film 60 extends to perisporium from an end side on the length direction of each pressure generating chamber 12, and be connected with the lead-in wire electrode 90 that for example forms by gold (Au) etc. respectively in the zone in pressure generating chamber 12 outsides, voltage is optionally imposed on each piezoelectric element 300 (with reference to Fig. 2) via this lead-in wire electrode 90.
Here, will be called non-active portion zone 330 less than the zone that forms the lower electrode film 60 that is patterned.
In addition, lower electrode film 60 in the present embodiment by the conductive layer 61 that forms on the insulator film 52 and on conductive layer 61, form by nickel acid lanthanum (LaNi
yO
x) the orientation key-course 62 that constitutes constitutes.Conductive layer 61 is formed than orientation key-course 62 low materials by resistivity, is for example formed by the oxide of metal material, metal material or their alloy etc.The metal material that forms conductive layer 61 specifically preferably includes and is selected from least a in following group, and described group comprises copper, aluminium, tungsten, platinum, iridium, ruthenium, silver, nickel, osmium, molybdenum, rhodium, titanium, magnesium, cobalt.
For example used the LaNiO of x=3, y=1 in the present embodiment as the nickel acid lanthanum of orientation key-course 62
3The orientation key-course 62 that is formed by such nickel acid lanthanum can not be subjected to the influence as the crystal plane direction of the conductive layer 61 of substrate in fact, and its crystallization by perovskite structure forms, and crystal plane direction edge (111) preferred orientation.
The method that forms such orientation key-course 62 is not had special qualification, sputtering method, sol-gel processing, MOD method etc. are for example arranged,, can form and have crystalline orientation key-course 62 as described above by suitably adjusting membrance casting condition.
Here, the piezoelectric body layer 70a that is formed on orientation key-course 62 (lower electrode film 60) is formed by the crystallization of perovskite structure.In addition, the piezoelectric body layer 70a of orientation on the key-course 62 be orientated the influence of crystalline orientation of key-course 62 and its crystal plane direction along (111) orientation.That is, piezoelectric body layer 70 epitaxial growth on orientation key-course 62, crystal plane direction is along (111) orientation.The piezoelectric body layer 70b that part beyond orientation key-course 62 forms, be that piezoelectric body layer 70b on the insulator film 52 is also preferably formed by the crystallization of perovskite structure, and crystal plane direction is orientated along (111).
Have the piezoelectric element 300 of such piezoelectric body layer 70 because the excellent in crystallinity of piezoelectric body layer 70 has improved the shift amount of piezoelectric element 300, and suppressed piezoelectric body layer and wreck, thereby also improved durability.For example, if drive piezoelectric element 300 repeatedly, then along with the deterioration of piezoelectric element 300 etc., its shift amount descends gradually, but because piezoelectric body layer 70 has good crystallinity, therefore also can suppress the decline of this shift amount.
In addition, piezoelectric body layer 70, the crystal structure that particularly is orientated the piezoelectric body layer 70a on the key-course 62 are preferably rhombohedral crystal, tetragonal, monoclinic crystal.And piezoelectric body layer 70 is preferably formed by column crystallization.Thus, the shift amount that can further suppress piezoelectric element 300 reliably descends and can suppress piezoelectric body layer 70 and wrecks.According to structure of the present invention, the top layer of lower electrode film 60 is made of orientation key-course 62, and described orientation key-course 62 is formed by nickel acid lanthanum, and the top layer of oscillating plate 50 is made of insulator film 52, and described insulator film 52 is formed by titanium oxide.The crystallization of piezoelectric body layer 70 is from these orientation key-courses 62 and insulator film 52 growths as substrate.Therefore, can form with comparalive ease and have above-mentioned arbitrary crystal structure and be the piezoelectric body layer 70 of column crystallization.
As the material of piezoelectric body layer 70, for example preferably by with lead zirconate titanate [Pb (Zr, Ti) O
3: PZT] be the material formation of main component, but also can use the solid solution [Pb (Mg of lead magnesio-niobate and lead titanates in addition
1/3Nb
2/3) O
3-PbTiO
3: PMN-PT], the solid solution [Pb (Zn of zinc niobate lead and lead titanates
1/3Nb
2/3) O
3-PbTiO
3: PZN-PT] etc.No matter be any, so long as the material that is formed by the crystallization of perovskite structure, the material of piezoelectric body layer 70 just is not limited to above-mentioned material.
Manufacture method to such piezoelectric body layer 70 does not have special qualification, and sol-gel processing, MOD method etc. are for example arranged.And, when forming piezoelectric body layer 70, have above-mentioned crystalline piezoelectric body layer 70 by suitably adjusting membrance casting condition, heating (calcining) condition etc., can forming by such method.
In addition, in the present embodiment, as mentioned above, the end face of lower electrode film 60 is made of the inclined plane with respect to the surface tilt of oscillating plate 50 rather than constitutes (with reference to Fig. 3) with approximately perpendicular.The end face of this lower electrode film 60 for example is preferably 10～30 ° with respect to the angle of inclination on oscillating plate 50 surfaces.Thus, on the end face of this lower electrode film 60, also can form piezoelectric body layer 70 preferably.That is, the crystallinity of the integral body of piezoelectric body layer 70 can further homogenising.Therefore, suppressed the shift amount decline of piezoelectric element 300 and oscillating plate 50 more reliably.
And, in the present embodiment, as mentioned above,,, also can obtain enough electric current deliverabilities even therefore drive a plurality of piezoelectric elements 300 simultaneously because lower electrode film 60 has resistivity than the low conductive layers 61 of orientation key-course 62.Therefore, even drive a plurality of piezoelectric elements 300 that are set up in parallel simultaneously, the shift characteristics of each piezoelectric element 300 can not produce deviation yet, thereby can access the shift characteristics of stablizing and omiting homogeneous.
In the present embodiment, upper electrode film 80 forms on the zone relative with a plurality of pressure generating chamber 12 continuously, and another end side from the length direction of pressure generating chamber 12 extends to perisporium in addition.That is, upper electrode film 80 covers the almost whole zone of the upper surface of piezoelectric body layer 70 in the zone relative with pressure generating chamber 12 and end face and is provided with.Thus, prevented in fact that by upper electrode film 80 moisture in the atmosphere (moisture) from soaking into to piezoelectric body layer 70.Therefore, the destruction of moisture (moisture) can be suppressed, thereby the durability of piezoelectric element 300 can be improved significantly piezoelectric element 300 (piezoelectric body layer 70).
Forming on the substrate 10 to engage by bonding agent 35 at the stream that is formed with the actuator that is made of such oscillating plate 50 and piezoelectric element 300 has protective substrate 30; described protective substrate 30 has piezoelectric element protection portion 31 in the zone relative with piezoelectric element 300, and described piezoelectric element protection portion 31 can guarantee can not to hinder the space of the degree of piezoelectric element 300 motions.Piezoelectric element 300 is because formation in this piezoelectric element protection portion 31 is therefore protected with the state that can be subjected to external environment influence hardly.In addition, be provided with reservoir 32 in the interconnecting part 15 corresponding zones with stream formation substrate 10 of protective substrate 30.In the present embodiment; this reservoir 32 runs through protective substrate 30 and is provided with along being set up in parallel direction of pressure generating chamber 12 on thickness direction; and the interconnecting part 15 with stream formation substrate 10 is communicated with as mentioned above, thereby has constituted the reservoir 100 as the common ink chamber of each pressure generating chamber 12.
And, being provided with the through hole 33 that on thickness direction, runs through protective substrate 30 in the piezoelectric element maintaining part 31 and the zone between the reservoir 32 of protective substrate 30, the end of lower electrode film 60 and lead-in wire electrode 90 is exposed in this through hole 33.And though do not illustrate among the figure, these lower electrode film 60 and lead-in wire electrode 90 are by extending to being connected distribution and being connected with the drive IC that is used to drive piezoelectric element 300 etc. in the through hole 33.
Material as protective substrate 30; for example can enumerate glass, ceramic material, metal, resin etc.; but more preferably form, use in the present embodiment with stream to form substrate 10 identical materials, be that monocrystalline silicon substrate forms by forming the roughly the same material of the thermal coefficient of expansion of substrate 10 with stream.
On this protective substrate 30, also engage the flexible base, board 40 that is made of diaphragm seal 41 and fixed head 42 is arranged.Diaphragm seal 41 is low and have flexible material and form by rigidity, seals a face of reservoir 32 by sealing film 41.Fixed head 42 is formed by hard materials such as metals.Because the zone relative with reservoir 100 of this fixed head 42 is the peristomes 43 that are removed fully on thickness direction, so a face of reservoir 100 is only had flexual diaphragm seal 41 sealings.
In the ink jet recording head of such present embodiment, the external ink feeding unit that does not illustrate from figure obtains ink, after 21 inside has been full of ink from reservoir 100 to nozzle, according to tracer signal from the drive IC that does not illustrate among the figure, to applying voltage with pressure generating chamber 12 corresponding each piezoelectric elements 300, piezoelectric element 300 is occured bending and deformation, and the pressure in each pressure generating chamber 12 raises thus, thereby from nozzle 21 ejection ink droplets.
Below, with reference to Fig. 4 A～Fig. 4 C to Fig. 7 A～Fig. 7 C the manufacture method of such ink jet recording head is described.Fig. 4 A～Fig. 4 C to Fig. 7 A～Fig. 7 C is the sectional view that the manufacturing process of ink jet recording head is shown.
At first, shown in Fig. 4 A, form substrate with forming oscillating plate 50 on the surface of wafer 110 at stream, it is wafers that the monocrystalline silicon substrate by crystal plane direction (110) forms with wafer 110 that stream forms substrate.Specifically, at first form the silicon dioxide film 53 that constitutes elastic membrane 51.For example, in the present embodiment, carry out thermal oxide by flow path formation substrate with the surface of wafer 110 and form elastic membrane 51 (silicon dioxide film 53).Certainly, also can form elastic membrane 51 by the method beyond the thermal oxide.Then, go up formation by titanium oxide (TiO in this elastic membrane 51 (silicon dioxide film 53)
x) insulator film 52 that forms.Formation method to insulator film 52 does not have special qualification, for example can form by sputtering method.
The lead composition that the insulator film 52 that constitutes oscillating plate 50 also has a piezoelectric body layer 70 that prevents to constitute piezoelectric element 300 forms the effect of substrate 10 diffusions to elastic membrane 51 or stream.
Then, shown in Fig. 4 B, go up formation by the lower electrode film 60 that conductive layer 61 and orientation key-course 62 constitute, this lower electrode film 60 is patterned as predetermined shape at oscillating plate 50 (insulator film 52).Specifically, for example on insulator film 52, form conductive layer 61, and on this conductive layer 61, form the orientation key-course 62 that constitutes by nickel acid lanthanum by predetermined metal materials such as usefulness platinum (Pt) such as sputtering methods.Then, successively these orientation key-courses 62 and conductive layer 61 are carried out patterning.
The formation method of orientation key-course 62 for example has sputtering method, sol-gel processing, MOD method etc. as mentioned above.And, have above-mentioned crystalline orientation key-course 62 by suitably adjusting membrance casting condition, can forming.
Then, shown in Fig. 4 C, for example make the piezoelectric body layer 70 that forms by lead zirconate titanate (PZT) etc. form substrate with film forming on the whole surface of wafer 110 at the stream that is formed with lower electrode film 60.Formation method to piezoelectric body layer 70 does not have special qualification, for example adopt sol-gel processing to form piezoelectric body layer 70 in the present embodiment, that is: to metallorganic dissolving, be dispersed in the solvent and the so-called colloidal sol that forms be coated with, dry and make its gelation, obtain the piezoelectric body layer 70 that forms by metal oxide by at high temperature calcining then.Certainly, the formation method of piezoelectric body layer 70 is not limited to sol-gel processing, for example also can use MOD method or sputtering method etc.
And, when forming piezoelectric body layer 70, have above-mentioned crystalline piezoelectric body layer 70 by suitably adjusting membrance casting condition, heating (calcining) condition etc., can forming by such method.
Then, this piezoelectric body layer 70 is patterned as predetermined shape.Specifically, shown in Fig. 5 A, painting erosion resistant agent on piezoelectric body layer 70 exposes and develops this resist, forms the resist film 200 of predetermined pattern thus.That is, for example negative resist is coated on the piezoelectric body layer 70, then by using predetermined mask to expose, develop, bake and bank up with earth and form resist film 200 by spin-coating method etc.Certainly, also can replace negative resist and use positive corrosion-resisting agent.In the present embodiment, the end face of resist film 200 forms according to the mode that tilts with predetermined angle.
Then, shown in Fig. 5 B, by this resist film 200 is carried out ion milling and it is patterned as predetermined shape piezoelectric body layer 70 as mask.At this moment, piezoelectric body layer 70 is along the end face of the inclination of resist film 200 and be patterned.That is, the end face of piezoelectric body layer 70 is the inclined plane.
Then, shown in Fig. 5 C, peel off the resist film 200 on the piezoelectric body layer 70.Stripping means to resist film 200 does not have special qualification, for example can wait by organic stripper and peel off.Then, further, remove resist film 200 thus fully by the surface of cleaning piezoelectric body layers 70 such as predetermined cleaning fluid.
Then, as shown in Figure 6A, form substrate with on whole of wafer 110 and this upper electrode film 80 is patterned as predetermined shape forms piezoelectric element 300 by upper electrode film 80 being formed on stream.The material of upper electrode film 80 does not have special qualification, so long as the higher material of electric conductivity gets final product, for example preferably uses metal materials such as iridium, platinum, palladium.In addition, the thickness of upper electrode film 80 is required to be the thickness of the degree that can not hinder piezoelectric element 300 displacements.But this upper electrode film 80 double as in the present embodiment is used to suppress to be caused by moisture the moisture-resistant diaphragm of piezoelectric body layer 70 damages, so is preferably formed thicklyer.
Then, shown in Fig. 6 B, form substrate at stream and form the lead-in wire electrode 90 that constitutes by gold (Au), carry out patterning at each piezoelectric element 300 then with on whole of wafer 110.Then, shown in Fig. 6 C, will be bonded in stream with wafer 130 by the protective substrate that a plurality of protective substrates 30 form as one by bonding agent 35 and form substrate with on the wafer 110.Piezoelectric element protection portion 31, reservoir 32 and through hole 33 have been pre-formed at protective substrate on wafer 130.
Then, shown in Fig. 7 A, stream is formed substrate attenuate to preset thickness with wafer 110.Then, shown in Fig. 7 B, form substrate at stream and for example newly form by silicon nitride (SiN with on the wafer 110
x) diaphragm 55 that constitutes, and diaphragm 55 is patterned as predetermined shape by predetermined mask.Then; shown in Fig. 7 C; this diaphragm 55 as mask and for example use alkali lye flow path such as KOH to form substrate and carry out anisotropic etching (wet etching) with wafer 110, is formed substrate with formation pressure generating chamber 12, ink feed path 13, communication path 14 and interconnecting part 15 on the wafer 110 at stream thus.
Then; for example wait to cut off and remove the stream that does not illustrate among the figure and form the unwanted part of substrate with the peripheral edge portion of wafer 110 and protective substrate usefulness wafer 130 by cutting (dicing); nozzle plate 20 is bonded on stream forms substrate with being bonded on protective substrate with on the wafer 130 on the wafer 110 and with flexible base, board 40; then these streams are formed substrates and be divided into the size of a chip shown in Figure 1, produce ink jet recording head thus with wafer 110.
(embodiment 2)
Fig. 8 is the sectional view of major part that the ink jet recording head of embodiment 2 is shown.
Present embodiment is another example of the structure of lower electrode film, and the structure beyond the lower electrode film 60 is identical with embodiment 1.Promptly, be formed on (upper surface) on the conductive layer 61 with respect in embodiment 1, being orientated key-course 62, as shown in Figure 8, in the present embodiment, the orientation key-course 62A that constitutes lower electrode film 60 is arranged on the upper surface and end face of conductive layer 61, promptly is provided with orientation key-course 62A in the mode that covers conductive layer 61.
By such structure, because in the end of lower electrode film 60, piezoelectric body layer 70 also is formed on the orientation key-course 62A, has therefore further improved near the crystallinity of the piezoelectric body layer 70 the end of lower electrode film 60.
(embodiment 3)
Fig. 9 is the exploded perspective view of brief configuration that the ink jet recording head of embodiment 3 is shown, and Figure 10 A and Figure 10 B are respectively the plane of Fig. 9 and B-B ' sectional view of this plane.In addition, Figure 11 is the sectional view of major part that the ink jet recording head of embodiment 3 is shown.For with Fig. 1～identical parts of parts shown in Figure 3, mark identical label and omit repeat specification.
Present embodiment constitutes the electrode special except the common electrode that is made of piezoelectric element 300 the lower electrode film 60A that constitutes piezoelectric element 300 and by upper electrode film 80A, and all the other are identical with embodiment 1.
As shown in the figure, the lower electrode film 60A of present embodiment is arranged on each zone relative with each pressure generating chamber 12 with the narrow width of the width of specific pressure generating chamber 12, and an end side from the length direction of each pressure generating chamber 12 extends to perisporium, and connects together on perisporium and constituted the shared common electrode of each piezoelectric element 300.The end of the lower electrode film 60A of another end side on the length direction of pressure generating chamber 12 is positioned at the zone relative with pressure generating chamber 12.
In the present embodiment, upper electrode film 80A another end side on the length direction of each pressure generating chamber 12 extends to the outside of piezoelectric body layer 70 ends.And, near the end of this upper electrode film 80A, being connected with lead-in wire electrode 91, voltage is optionally imposed on each piezoelectric element 300 via this lead-in wire electrode 91.
Certainly, in the said structure of present embodiment, because piezoelectric body layer 70 has good crystallinity, therefore also can guarantee the shift amount of piezoelectric element 300 fully, and the shift amount that can suppress piezoelectric element 300 descends along with the driving repeatedly of piezoelectric element 300.And,, therefore can suppress the destruction to piezoelectric element 300 such as moisture because the surface of piezoelectric body layer 70 covered by upper electrode film 80A.That is,, all can suppress piezoelectric body layer 70 damages reliably, thereby can realize having improved the ink jet recording head of durability regardless of the electrode structure of piezoelectric element 300.
(embodiment 4)
Figure 12 A and Figure 12 B are respectively the planes and C-C ' sectional view that its major part is shown of the ink jet recording head of embodiment 4.For with Fig. 1～identical parts of parts shown in Figure 3 of embodiment 1, mark identical label and omit repeat specification.
Present embodiment is the example that has also formed between oscillating plate 50 and piezoelectric body layer 70 except lower electrode film 60 with lower electrode film 60 discontinuous metal levels 65, and except that having increased metal level 65, all the other structures are identical with embodiment 1.
In Figure 12 A and Figure 12 B, formed metal level 65 between oscillating plate 50 in the zone that does not form lower electrode film 60 on oscillating plate 50 and the piezoelectric body layer 70.In addition, metal level 65 is not electrically connected with it continuously and not with lower electrode film 60.
The rectangular shape that the flat shape of metal level 65 is not limited to illustrate in the present embodiment only otherwise continuous with lower electrode film 60, can be a shape arbitrarily.In addition, cross sectional shape also is not limited to rectangular shape, also can similarly form trapezoidal shape with lower electrode film 60.
In addition, the structure of metal level 65 also can similarly constitute the structure that is covered conductive layer 61 by orientation key-course 62 with the lower electrode film shown in Figure 8 60 of embodiment 2.
In such structure, in the end of metal level 65, piezoelectric body layer 70 also is formed on the orientation key-course 62, therefore can further improve the crystallinity of piezoelectric body layer 70.
(other embodiments)
Each embodiment of the present invention more than has been described, but has the invention is not restricted to above-mentioned embodiment.
For example, in the above-described embodiment lower electrode film 60 is illustrated by conductive layer 61 and orientation key-course 62 these two-layer examples that constitute, but the structure of lower electrode film 60 is not limited thereto.As long as the top layer of lower electrode film 60 is made of the orientation key-course 62 that forms with the sour lanthanum of nickel, then the structure of its downside is not subjected to special qualification, and for example conductive layer 61 also can be made of multilayer.
Similarly, in the above-described embodiment oscillating plate 50 is illustrated by elastic membrane 51 and insulator film 52 these two-layer examples that constitute, but the structure of oscillating plate 50 is not limited thereto.As long as the top layer of oscillating plate 50 is made of the insulator film 52 that forms with titanium oxide, for example can also be provided with between elastic membrane 51 and the insulator film 52 or between elastic membrane 51 and stream formation substrate 10 other layer.
And, for example in the above-described embodiment, uses electrode film 80 and cover piezoelectric body layer 70, and suppressed the destruction of moisture thus, but the structure of upper electrode film 80 is not limited thereto piezoelectric body layer 70.For example, upper electrode film 80 also can only be arranged on the zone relative with lower electrode film 60.At this moment, also can for example form the diaphragm that forms by the material that comprises aluminium oxide etc., and suppress the destruction of moisture piezoelectric body layer 70 by this diaphragm in other parts of piezoelectric body layer 70 with moisture resistance.
In addition, the ink jet recording head of above-mentioned embodiment has constituted the part of the head unit with the ink flow path that is communicated with print cartridge etc., and is installed on the inkjet recording device as an example of liquid injection apparatus.Figure 13 is the synoptic diagram that an example of this inkjet recording device is shown.As shown in figure 13, the print cartridge 2A and the 2B that constitute the ink feed unit are set on the head unit 1A and 1B with ink jet recording head removably, and the carriage 3 that this head unit 1A and 1B are installed can move in the axial direction and be set at freely on the bracket axle 5 that is installed on the apparatus main body 4.This head unit 1A and 1B for example are respectively applied for and spray black ink constituent and color inks constituent.And the driving force of CD-ROM drive motor 6 is passed on the carriage 3 via a plurality of gears that do not illustrate among the figure and timing belt 7, and the carriage 3 that head unit 1A and 1B are installed thus moves along bracket axle 5.On the other hand, be provided with platen 8, transport the recording mediums such as paper that come, be that recording sheet S is transported on platen 8 by the feeding-in roll that do not illustrate among the figure etc. at apparatus main body 4 upper edge bracket axles 5.
In the above-described embodiment, an example as jet head liquid of the present invention ink jet recording head has been described, but the basic structure of jet head liquid is not limited to above-mentioned structure.The present invention is an object with all jet head liquids widely, also can be applied to spray the jet head liquid of ink liquid in addition certainly.As other jet head liquid, for example can enumerate: the various record heads that are used for image processing systems such as printer; The colorant injector head that in the manufacturing of the colour filter of LCD etc., uses; The electrode material injector head that in the electrode of OLED display, FED (field-emitter display) etc. forms, uses; The biological organic matter that uses in the manufacturing of biochip sprays first-class.
In addition, the invention is not restricted to be installed to the ink jet recording head is actuator on the jet head liquid of representative, also can be applied to be installed to the actuator on other devices certainly.
Claims (17)
1. jet head liquid, comprise that stream forms substrate and piezoelectric element, form at described stream and to be set side by side with a plurality of pressure generating chamber that is communicated with the nozzle of liquid droplets respectively on the substrate, described piezoelectric element comprises bottom electrode, piezoelectric body layer and the top electrode that is arranged on a face side of described stream formation substrate via oscillating plate, the end face of described piezoelectric body layer is made of the inclined plane that tilts to its outside
The described bottom electrode that constitutes each piezoelectric element forms with the narrow width of width than described pressure generating chamber, and described piezoelectric body layer forms with the width wideer than the width of described bottom electrode, thereby the end face of described bottom electrode is covered by described piezoelectric body layer,
The top layer of described oscillating plate is made of insulator film, and described insulator film is by titanium oxide (TiO
x) form, the top layer of described bottom electrode is made of the orientation key-course, and described orientation key-course is by nickel acid lanthanum (LaNi
yO
x) form,
And, described orientation key-course and at least should the described piezoelectric body layer of orientation on key-course forming, and crystal plane direction edge (111) preferred orientation by the crystallization of perovskite structure.
2. jet head liquid as claimed in claim 1, wherein,
Be formed with metal level between described oscillating plate and described piezoelectric body layer, described metal level is not continuous with described bottom electrode, and at least a portion on the top layer of described metal level is made of described orientation key-course.
3. jet head liquid as claimed in claim 1, wherein,
The crystal structure of described piezoelectric body layer is rhombohedral crystal, tetragonal or monoclinic crystal.
4. as each described jet head liquid in the claim 1 to 3, wherein,
At least the described piezoelectric body layer on the described orientation key-course is formed by column crystallization.
5. as each described jet head liquid in the claim 1 to 4, wherein,
Described piezoelectric body layer on the described insulator film is formed by column crystallization.
6. as each described jet head liquid in the claim 1 to 4, wherein,
The inclined plane of the end face of the described bottom electrode that is covered by described piezoelectric body layer for tilting towards its outside.
7. as each described jet head liquid in the claim 1 to 6, wherein,
Described bottom electrode has conductive layer in the lower floor of described orientation key-course, and described conductive layer is formed than the low material of described orientation key-course by resistivity.
8. jet head liquid as claimed in claim 7, wherein,
Described conductive layer is covered by described orientation key-course.
9. as claim 7 or 8 described jet head liquids, wherein,
Described conductive layer is formed by the oxide of metal material, metal material or their alloy.
10. jet head liquid as claimed in claim 9, wherein,
Described metal material comprises and is selected from least a in following group, and described group comprises copper, aluminium, tungsten, platinum, iridium, ruthenium, silver, nickel, osmium, molybdenum, rhodium, titanium, magnesium, cobalt.
11. as each described jet head liquid in the claim 1 to 10, wherein,
Described piezoelectric body layer is a main component with lead zirconate titanate (PZT).
12. as each described jet head liquid in the claim 1 to 11, wherein,
The diaphragm that the end face of described piezoelectric body layer is had moisture resistance covers.
13. as each described jet head liquid in the claim 1 to 12, wherein,
The end face of described piezoelectric body layer is covered by described top electrode.
14. jet head liquid as claimed in claim 13, wherein,
Described bottom electrode and described pressure generating chamber independently are provided with and have been constituted the electrode special of described piezoelectric element accordingly, and described top electrode is in the common electrode of striding described pressure generating chamber on the direction and being provided with and having constituted described piezoelectric element continuously that is set up in parallel of described pressure generating chamber.
15. a liquid injection apparatus has each described jet head liquid in the claim 1 to 14.
16. actuator, involving vibrations plate and piezoelectric element, described oscillating plate are arranged on a face side of substrate, and described piezoelectric element comprises bottom electrode, piezoelectric body layer and the top electrode that is arranged on the described oscillating plate, the end face of described piezoelectric body layer is made of the inclined plane that tilts to its outside
Described piezoelectric body layer forms with the width wideer than the width of described bottom electrode, and the end face of described bottom electrode is covered by described piezoelectric body layer,
The top layer of described oscillating plate is made of insulator film, and described insulator film is by titanium oxide (TiO
x) form, the top layer of described bottom electrode is made of the orientation key-course, and described orientation key-course is by nickel acid lanthanum (LaNi
yO
x) form,
And, described orientation key-course and at least should the described piezoelectric body layer of orientation on key-course forming, and crystal plane direction edge (111) preferred orientation by the crystallization of perovskite structure.
17. actuator as claimed in claim 16, wherein,
Be formed with metal level between described oscillating plate and described piezoelectric body layer, described metal level and described bottom electrode are independent mutually, and the top layer of described metal level is made of described orientation key-course.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008082879 | 2008-03-27 | ||
| JP2008082879 | 2008-03-27 | ||
| JP2009006327 | 2009-01-15 |
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| Publication Number | Publication Date |
|---|---|
| CN101544118A true CN101544118A (en) | 2009-09-30 |
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ID=41191597
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009101326017A Pending CN101544118A (en) | 2008-03-27 | 2009-03-27 | Liquid ejecting head, liquid ejecting apparatus, and actuator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112721450A (en) * | 2019-10-28 | 2021-04-30 | 精工爱普生株式会社 | Piezoelectric element, liquid ejection head, and printer |
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2009
- 2009-03-27 CN CNA2009101326017A patent/CN101544118A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112721450A (en) * | 2019-10-28 | 2021-04-30 | 精工爱普生株式会社 | Piezoelectric element, liquid ejection head, and printer |
| CN112721450B (en) * | 2019-10-28 | 2022-06-14 | 精工爱普生株式会社 | Piezoelectric element, liquid ejection head, and printer |
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