CN101543934B - 靶材结构及其制作方法 - Google Patents
靶材结构及其制作方法 Download PDFInfo
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- CN101543934B CN101543934B CN200910127245XA CN200910127245A CN101543934B CN 101543934 B CN101543934 B CN 101543934B CN 200910127245X A CN200910127245X A CN 200910127245XA CN 200910127245 A CN200910127245 A CN 200910127245A CN 101543934 B CN101543934 B CN 101543934B
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
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- 230000000171 quenching effect Effects 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 239000012046 mixed solvent Substances 0.000 description 5
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
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- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical group [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- -1 preferably Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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CN200910127245XA CN101543934B (zh) | 2009-03-12 | 2009-03-12 | 靶材结构及其制作方法 |
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CN200910127245XA CN101543934B (zh) | 2009-03-12 | 2009-03-12 | 靶材结构及其制作方法 |
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CN101543934A CN101543934A (zh) | 2009-09-30 |
CN101543934B true CN101543934B (zh) | 2011-11-30 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101745734B (zh) * | 2009-12-18 | 2011-09-07 | 北京有色金属研究总院 | 一种大面积靶材与背板的快速焊接方法 |
CN102554455B (zh) * | 2011-12-31 | 2015-07-08 | 宁波江丰电子材料股份有限公司 | 钨钛合金靶材与铜合金背板扩散焊接方法 |
CN103785991A (zh) * | 2012-10-27 | 2014-05-14 | 汉中新环干式变压器有限责任公司 | 大面积铜板平面焊接方法 |
CN103737140B (zh) * | 2013-12-30 | 2015-12-02 | 江西沃格光电股份有限公司 | Ito靶材与铜背板的绑定方法 |
CN106270555A (zh) * | 2015-05-25 | 2017-01-04 | 宁波江丰电子材料股份有限公司 | 加工螺纹的方法、靶材组件的制作方法以及靶材组件 |
CN112676782B (zh) * | 2020-12-25 | 2023-04-07 | 宁波江丰电子材料股份有限公司 | 一种钛靶材与铜背板的装配方法 |
CN113278914B (zh) * | 2021-05-14 | 2023-04-07 | 宁波江丰电子材料股份有限公司 | 一种对于粉末压结类靶材焊接面的镀镍方法 |
CN113278913A (zh) * | 2021-05-14 | 2021-08-20 | 宁波江丰电子材料股份有限公司 | 一种对于粉末压结类靶材焊接面的镀镍方法 |
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