CN101543406B - Method for assembling microwire electrode array by using silicon array hole - Google Patents
Method for assembling microwire electrode array by using silicon array hole Download PDFInfo
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- CN101543406B CN101543406B CN2008101028009A CN200810102800A CN101543406B CN 101543406 B CN101543406 B CN 101543406B CN 2008101028009 A CN2008101028009 A CN 2008101028009A CN 200810102800 A CN200810102800 A CN 200810102800A CN 101543406 B CN101543406 B CN 101543406B
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Abstract
The invention relates to an assembling technology of a microwire electrode array, in particular to a technology of assembling a microwire electrode by using a silicon array hole. By adopting a common photoetching and chemical anisotropic etching method, the silicon array hole with high precision, low cost and controllable aperture and layout way can be manufactured, and the two-dimensional or the three-dimensional assembling of the microwire electrode is finished through the fixation of epoxy resin. The method is suitable for the assembly of the small-size microwire electrode array and the device encapsulation, and the array hole can be customized according to the radius, spacing and layout way, and the like of the microwire.
Description
Technical field
The present invention relates to the mounting technology of fibril electrode array, particularly a kind of technology of using silicon array hole assembling fibril electrode.
Background technology
The people is when thinking, and specific electrical activity can appear in cerebral cortex, and this electrical activity is called brain.The research of EEG signals is the important means of understanding the active mechanism of human brain, people's cognitive process and diagnosis brain illness, also is the new approach that realizes people and extraneous communication.
In order to understand the interaction between cerebral activity principle and the neuron in depth, the effective instrument of our needs is realized the record to EEG signals.The progress of MEMS Technology and micro-nano process technology has impelled us to produce multiple novel nerve signal recording electrode, for example fibril electrode, plane electrode and 3 D stereo electrode.Silica-based plane electrode and 3 D stereo electrode, the cost of manufacture height, complex process needs special device just can use during implantation, therefore limited it and used widely.
From the fifties in last century, David H.Hubel has delivered the method for using the tungsten filament microelectrode that independent neuron is write down, company such as TDT 16 passage tungsten filament electrode arrays of producing till now, and the fibril electrode array of employed 128 passages of Duke Univ USA's Nicolelis laboratory, it seems that at present little wire electrode is proved to be the most effective neural record electrode, and it is low to have cost, and manufacture method is simple, advantages such as good biocompatibility.
Along with further going deep into of research, for the needs that improve record efficiency and satisfy research, the multi-channel electrode co-registered is trend of the times, and this just needs corresponding fibril electrode array.1981, people such as U.S. scientist Kruger became multiple electrode array with the fixing a plurality of microelectrodes of ceramic material on the grid of spacing 250um, and this method efficient is low, and manufacture difficulty is bigger.Employed little wire electrode array in the experiment generally adopts the method that directly is welded on the printed circuit board (PCB) (PCB) now, and uses epoxy resin fixing to keep its spacing.The fibril electrode diameter that is used for the nerve signal record is generally less than 100 μ m, and is crooked easily in manufacturing process, and is not easy the fixed position, and this just makes its yield rate not high, and the device concordance is bad.
Summary of the invention
The present invention proposes a kind of method of using silicon array hole assembling fibril electrode array, arrange and locate at fibril electrode, use the silicon array hole, little tinsel is inserted the silicon array hole as pedestal, applying insulant can fix, and the spacing of microfilament etc. can be by customization.
Concrete, this method may further comprise the steps:
Selecting a surface orientation is 100 silicon chip;
On described silicon chip, produce the slick array hole of sidewall;
Determine microfilament length according to the electrode implantation depth, will write down end and fine away with tracer signal;
With the vertical array hole that inserts described silicon chip of microfilament, regulate microfilament record end length, and make every fibril electrode parallel to each other in vertical direction,
Apply epoxy resin at the described array hole back side, and place baking oven to heat, be used for fibril electrode array is fixed on array hole;
Fibril electrode array is linked to each other with external circuit;
Apply epoxy resin in described junction and be heating and curing, realize that insulation also keeps its stable mechanical performance.
Further, described silicon array hole is made by common photoetching and chemical wet etching method.
Further, described microfilament is one of rustless steel, tungsten, platinum, iridium metals silk, or is to be the alloy silk of described metal.
Further, described microfilament surface scribbles insulating barrier, is used for electricity and isolates; Described record end naked layer is used for tracer signal.
Further, the epoxy resin of described fixedly microfilament and array hole forms with silicon materials with microfilament and contacts.
Further, the conducting resinl that is connected to of described microfilament and external circuit covers, or is welding.
Further, the diameter in described silicon array hole is greater than the microfilament diameter, so that microfilament can insert in the hole.
Because silicon is semi-conducting material, it directly provides electric isolation for device, and because silicon has the favorable mechanical performance and corrosion-resistant environmental stability such as heat-resisting is good, this device can be under multiple condition can both steady operation, biological example body electrolyte environment.The fixedly use epoxy resin of microfilament such as glass fibre epoxy (FR4), it is generally liquid state, and full-filling that can be smooth is in array hole.Because the operating temperature in silicon array hole is-60 ℃ to 150 ℃, can keep stable in the process that epoxy resin is heating and curing.
This method is fit to the assembling and the device encapsulation of small size fibril electrode array, and array hole can be easily carries out customization according to the radius of microfilament, spacing, arrangement mode etc., realizes two dimension or three-dimensional electrod-array.
Description of drawings
Fig. 1 is the sketch map of silicon array orifice plate and fibril electrode;
Fig. 2 is positioned over sketch map in the array hole with fibril electrode;
Fig. 3 is fixed on sketch map in the array hole with fibril electrode.
The specific embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
One, determines the silicon array hole dimension.Determine the size in hole according to the diameter of microfilament, its size should be slightly larger than the microfilament diameter.Silicon single crystal has anisotropic characteristic, utilizes this characteristic to use the surface to be the silicon chip of (100) crystal face, by the method for chemical anisotropic etch, can make have the precision height, the slick array hole of sidewall.Because (110) face of silicon wafer is 54.7 ° with (111) face angle, so the openings of sizes of array hole and frame thickness have promptly determined the size in the hole after the corrosion.The pass of the openings of sizes L in hole and frame thickness h and microfilament radius r is: 54.7 ° of L=2r+2h * c tan, for the framework that makes array hole has certain intensity, the h value is 50um～100um.Determine the number in the hole on the every silicon chip according to user's needed electrode channel number in experiment.Will be with 24 channel electrode arrays such as, user, then the array number of perforations is 24 on each silicon chip, array way also can be selected by the user, such as 4 * 6,3 * 8,2 * 12 etc., but consigned processing.Array hole sketch map after making is shown in label 2 in the accompanying drawing 1.
According to little diameter wiry, can the openings of sizes of array hole be optimized, as at present the most frequently used to diameter be the 50um tungsten filament electrode, then the opening in single hole, corrosion back should be slightly larger than 50um, in general gets 55um～60um and gets final product.Wire array vertical and horizontal distances can accurately customize by the frame width of adjusting between the Kong Yukong equally.The quantity of array hole is generally 8,16,32,64, or customizes according to required electrode channel number in the experiment, and the microfilament vertical fixing can be realized the three-diemsnional electrode array in array hole.The frame of array hole is generally 500um～1mm shown in label 2 in the accompanying drawing 1, can provide enough supports for microfilament.
Two, the microfilament of intercepting appropriate length, the part shown in label among Fig. 11 reserves required length at the two ends of microfilament respectively, and the end of fining away is reserved microfilament length for implanting end according to the needs of electrode implantation depth in the experimentation; The other end is the link with interface, pre-process device etc.
Three, as shown in accompanying drawing 2, microfilament is vertically inserted in the hole of label 3 signals.Regulate microfilament record end length, making every fibril electrode is parallel to each other on the z axle in vertical direction, and the part of the most advanced and sophisticated tracer signal of microfilament is on same horizontal plane.
Four, in the big square hole at the array hole back side, apply epoxy resin,, keep its stability in order to microfilament is fixed in the hole.Here employed epoxy resin is liquid before solidifying, and viscosity is lower, and full-filling that can be good is in array hole.
Five, place baking oven to heat device, make epoxy resin cure.As shown in accompanying drawing 3, the epoxy resin after label 4 representatives are solidified, the change on the single electrode position can not take place in just firm being fixed in the array hole of energy of electrod-array like this.
Six, fibril electrode array is linked to each other with external circuit.With lead-in wire fibril electrode is linked to each other with the treatment circuit of outside, can use conducting resinl or welding method to realize.Because microfilament has been fixed in the array hole, its link can be crooked, and can not have influence on the flatness of implanting end.
Seven, apply epoxy resin and being heating and curing in the junction, realize insulation, and keep its stable mechanical performance.
The front has specifically described embodiment of the present invention, be to be understood that, for a people with the common skill in present technique field, under the situation that does not deviate from scope of the present invention, above-mentioned and in additional claim, change and adjust in the special scope of the present invention that proposes and to reach purpose of the present invention equally.
Claims (7)
1. a method of using silicon array hole assembling fibril electrode array is characterized in that, may further comprise the steps:
Selecting a surface orientation is 100 silicon chip;
On described silicon chip, produce the slick array hole of sidewall;
Determine microfilament length according to the electrode implantation depth, will write down end and fine away with tracer signal;
With the vertical array hole that inserts described silicon chip of microfilament record end, regulate microfilament record end length, and make every fibril electrode parallel to each other in vertical direction,
Apply epoxy resin at the described array hole back side, and place baking oven to heat, be used for fibril electrode array is fixed on array hole;
The link of fibril electrode array is linked to each other with external circuit;
Apply epoxy resin in described junction and be heating and curing, realize that insulation also keeps its stable mechanical performance.
2. method according to claim 1 is characterized in that, described silicon array hole is made by common photoetching and chemical wet etching method.
3. method according to claim 1 is characterized in that, described microfilament is one of rustless steel, tungsten, platinum, iridium metals silk, or is to be the alloy silk of described metal.
4. method according to claim 1 is characterized in that, described microfilament surface scribbles insulating barrier, is used for electricity and isolates; Described record end naked layer is used for tracer signal.
5. method according to claim 1 is characterized in that, the epoxy resin of described fixedly microfilament and array hole forms with silicon chip with microfilament and contacts.
6. method according to claim 1 is characterized in that, the conducting resinl that is connected to of described microfilament and external circuit covers, or is welding.
7. method according to claim 1 is characterized in that, the diameter in described silicon array hole is greater than the microfilament diameter, so that microfilament can insert in the hole.
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| CN2008101028009A CN101543406B (en) | 2008-03-26 | 2008-03-26 | Method for assembling microwire electrode array by using silicon array hole |
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| CN2008101028009A CN101543406B (en) | 2008-03-26 | 2008-03-26 | Method for assembling microwire electrode array by using silicon array hole |
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| CN101543406B true CN101543406B (en) | 2010-09-15 |
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Families Citing this family (11)
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| CN101829401B (en) * | 2010-05-21 | 2013-07-31 | 西安交通大学 | Implanted bioelectrode based on photoetching and other micro-nano manufacturing technologies and preparation method thereof |
| CN101912665A (en) * | 2010-06-24 | 2010-12-15 | 重庆大学 | Flexible beam microelectrode array and preparation method thereof |
| CN102092674B (en) * | 2011-01-05 | 2012-07-25 | 东南大学 | Method for preparing micro-electrode array |
| CN102353706B (en) * | 2011-06-09 | 2013-11-06 | 西安交通大学 | High aspect ratio ultramicro tungsten electrode array and preparation method thereof |
| CN102334989B (en) * | 2011-07-29 | 2013-03-27 | 上海交通大学 | Different-plane microneedle array brain electrical dry electrode with controllable puncturing depth |
| CN102830138A (en) * | 2012-09-24 | 2012-12-19 | 中国科学院半导体研究所 | Photoelectrode array for neuron stimulation and electric signal recording and preparing method of array |
| CN104055510B (en) * | 2014-06-26 | 2016-06-01 | 浙江大学 | Based on the Wearable rat olfactory nerve signal supervisory instrument of cableless communication |
| CN106073771B (en) * | 2016-06-29 | 2019-10-18 | 中国科学院上海微系统与信息技术研究所 | A kind of customizable various dimensions high density flexible brain electrode and preparation method thereof |
| CN106493264B (en) * | 2016-11-21 | 2018-02-27 | 科斗（苏州）脑机科技有限公司 | Microfilament array electrode production mould |
| WO2021035527A1 (en) * | 2019-08-27 | 2021-03-04 | 中国科学院深圳先进技术研究院 | Multi-brain area recording electrode, manufacturing method and implantation method |
| CN115285930A (en) * | 2022-07-25 | 2022-11-04 | 武汉衷华脑机融合科技发展有限公司 | Micro-needle and flat cable inverse welding connecting structure and preparation process thereof |
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