CN101533835A

CN101533835A - An active electron component

Info

Publication number: CN101533835A
Application number: CN200910301906A
Authority: CN
Inventors: 俞建; 李治刿; 赵强; 张剑; 赵忠平
Original assignee: CHENGDU YISANWU STAR INDUSTRY Co Ltd
Current assignee: CHENGDU YISANWU STAR INDUSTRY Co Ltd
Priority date: 2009-04-28
Filing date: 2009-04-28
Publication date: 2009-09-16

Abstract

The invention relates to electronic components, specifically to a transistor packaging structure. The invention discloses a combined element with two transistors. In the technical program of this invention, an active electronic component includes a first transistor and a second transistor in the same package structure, the first transistor and the second transistor has mutually independent functions, and has fundamentally matched electric parameters. The inventive active electronic components are used for simplifying the circuit layout and reducing PCB wire laying complexity in the circuit products, thereby facilitating product miniaturization and facilitating the improvement of the component installation efficiency. The production efficiency can be further improved because the parameters do not need to match.

Description

A kind of active electron component

Technical field

The present invention relates to electronic component, particularly a kind of transistorized encapsulating structure.

Background technology

Along with the development of modern electronic technology, in the design of electronic products, the use of integrated circuit is very general, and the integrated degree of product is more and more high, and the automated production of electronic product and debugging level improve greatly.Integrated circuit is to constitute the circuit product that these elements combination become to have specific function by the some elements in the same encapsulating structure (at least one is active element).But in side circuit, often also there are a lot of circuit need use resolution element, particularly in some commonplace bridge-types or half bridge circuit, usually need two transistor (triodes, carry out co-ordination down together), and (what have requires the parameter basically identical, as multiplication factor etc. to require two transistor parameters coupling; The parameter that requires that has is matched, as is operated in the state of recommending).In process of production, not only need to carry out transistor parameter and detect and match, the design of circuit board and components and parts assembling are also very consuming time, and are unfavorable for the automated production and the debugging of product.Because need two transistors are installed, production efficiency also is affected.

Summary of the invention

Technical problem to be solved by this invention just provides a kind of two transistorized composition elements that have, and to satisfy the needs of above-mentioned special occasions, enhances productivity.

The present invention solve the technical problem, the technical scheme that adopts is that a kind of active electron component comprises the first transistor and transistor seconds in the same encapsulating structure, separate on described the first transistor and the transistor seconds function, and the electric parameter with basic coupling.

Concrete, described the first transistor and transistor seconds are field-effect transistor;

Perhaps, described the first transistor and transistor seconds are bipolar transistor.

Further, described the first transistor and transistor seconds have identical polar;

Perhaps, described the first transistor and transistor seconds have opposed polarity.Can satisfy the needs of different circuit structures.

Concrete, described encapsulating structure has six pins, connects three electrodes of described the first transistor and transistor seconds respectively.

Further, described six pins are positioned at the same side of described encapsulating structure, and this is a kind of single-row pin package form, can make vertical component or surface mount elements;

Perhaps, described six pins are evenly distributed on the relative both sides of described encapsulating structure, then are more suitable for making surface mount elements.

Preferably, described encapsulating structure has five pins, wherein two pins connect two electrodes of the first transistor respectively, the two other pin connects two electrodes of transistor seconds respectively, a remaining common pin that pin is the first transistor and transistor seconds, this pin is connected with the electrode of the first transistor with the transistor seconds remainder.This structure can further be simplified PCB layout, reduces number of welds.

Further, described five pins are positioned at the same side of described encapsulating structure.

The invention has the beneficial effects as follows, can simplify circuit layout, reduce the complexity of PCB layout, help the miniaturization of product, help improving the element installation effectiveness; Owing to do not need to carry out the parameter pairing, can further enhance productivity.

Description of drawings

Fig. 1 is the schematic diagram of embodiment 1;

Fig. 2 is the schematic diagram of embodiment 2;

Fig. 3 is the schematic diagram of embodiment 3;

Fig. 4 is the schematic diagram of embodiment 4;

Fig. 5 is the schematic diagram of embodiment 5;

Fig. 6 is the schematic diagram of embodiment 6;

Fig. 7 is the schematic diagram of embodiment 7;

Fig. 8 is the schematic diagram of embodiment 8.

Wherein: 10 is encapsulating structure; 11 is the first transistor; 12 is transistor seconds; 13 is pin.

Embodiment

The present invention has invented a kind of two transistorized active elements that encapsulated according to using commonplace pair transistor circuit in the circuit product.It is different from common integrated circuit, and two transistors wherein are two independently elements, does not have interrelated on the function.In process of production, two transistorized parameters are mated, and according to various connected modes and pin layout, make the product of various models, greatly facilitate user's use, improved the automated production efficient of circuit product, and helped the miniaturization of product.

Embodiment 1

This routine active electron component is made of the first transistor in the encapsulating structure 10 11 and transistor seconds 12 and electrode pin 13 thereof, as shown in Figure 1.The first transistor 11 and transistor seconds 12 have identical polar among the figure, are NPN transistor.Separate on the first transistor 11 and transistor seconds 12 functions, be independent of each other, and have the electric parameter of basic coupling, its multiplication factor, collector current, characteristic frequency, temperature coefficient etc. are substantially the same.Among the figure, encapsulating structure 10 has six pins, and six pins all are positioned at the same side of encapsulating structure 10, belongs to single-row pin package form, is fit to upright the installation.Among Fig. 1, the base stage of the first transistor 11, three electrodes of collector and emitter connect first pin, second pin and the 3rd pin respectively; The collector electrode of transistor seconds 12, emitter and three electrodes of base stage connect the 4th pin, the 5th pin and the 6th pin respectively.This example is mainly used in bridge-type and half bridge circuit, as oscillating circuit, and amplifying circuit etc.

Embodiment 2

Referring to Fig. 2.Among the figure, the first transistor 11 and transistor seconds 12 adopt two transistors of opposed polarity, and the first transistor 11 adopts NPN transistor, and transistor seconds 12 adopts PNP transistor.Other structure of this example and pin arrangements please refer to the description of embodiment 1, and this routine active electron component is particularly suitable for push-pull circuit.

Embodiment 3

Fig. 3 shows a kind of encapsulating structure of biserial pin.Encapsulating structure 10 has six pins among the figure, is evenly distributed on the both sides of encapsulating structure 10 correspondences, and the pin of each side connects transistorized three electrodes.This example is fit to make surface mount elements or horizontal installation.

Embodiment 4

This example adopts the packing forms of single-row five pins, as shown in Figure 4.One side of encapsulating structure 10 is distributed with five pins.Article five, article one pin and second are connected the base stage and the collector electrode of the first transistor 11 respectively in the pin, article four, pin and the 5th pin are connected the collector electrode and the base stage of transistor seconds 12 respectively, the 3rd remaining pin is the common pin of the first transistor 11 and transistor seconds 12, and is connected with the emitter of the first transistor 11 with transistor seconds 12.In this example, two transistors all adopt the NPN transistor of identical polar.This structure has been saved a pin, and structure is further simplified.Be used for physical circuit and can make circuit structure compact more, help reducing small product size.

Embodiment 5

Referring to Fig. 5.This example adopts the PNP transistor except the first transistor 11, and other structure is identical with embodiment 4.

Embodiment 6

This routine structure is identical with embodiment 4, and difference is being connected of pin and transistor electrodes.What wherein common pin (the 3rd pin) connected is the collector electrode of the first transistor 11 and transistor seconds 12, and other structure of this example is referring to Fig. 6.

Embodiment 7

This example has been selected the field-effect transistor of two opposed polarities for use, and wherein the first transistor 11 is the N channel junction field-effect transistors, and transistor seconds 12 is the P channel junction field-effect transistors, as shown in Figure 7.Six pin orders of connection of this example are: first, second and third pin connects grid, source electrode and the drain electrode of the first transistor respectively; Fourth, fifth, six pins connect source electrode, the drain and gate of transistor seconds respectively.

Embodiment 8

Referring to Fig. 8.This example has been selected the field-effect transistor of two identical polars for use, and the first transistor 11 and transistor seconds 12 are the N channel junction field-effect transistors.This example adopts the packing forms of five pins, and what wherein common pin (the 3rd pin) connected is the drain electrode of the first transistor 11 and the source electrode of transistor seconds 12.Other pin connection electrode as shown in Figure 8.

Claims

[claim 1] a kind of active electron component comprises the first transistor and transistor seconds in the same encapsulating structure, and is separate on described the first transistor and the transistor seconds function, and the electric parameter with basic coupling.
[claim 2] a kind of active electron component according to claim 1 is characterized in that described the first transistor and transistor seconds are field-effect transistor.
[claim 3] a kind of active electron component according to claim 1 is characterized in that described the first transistor and transistor seconds are bipolar transistor.
[claim 4] is characterized in that according to claim 1,2 or 3 described a kind of active electron components described the first transistor and transistor seconds have identical polar.
[claim 5] is characterized in that according to claim 1,2 or 3 described a kind of active electron components described the first transistor and transistor seconds have opposed polarity.
[claim 6] is characterized in that according to any described a kind of active electron component of claim 1～5 described encapsulating structure has six pins, connects three electrodes of described the first transistor and transistor seconds respectively.
[claim 7] a kind of active electron component according to claim 6 is characterized in that described six pins are positioned at the same side of described encapsulating structure.
[claim 8] a kind of active electron component according to claim 6 is characterized in that, described six pins are evenly distributed on the relative both sides of described encapsulating structure.
[claim 9] is according to any described a kind of active electron component of claim 1～5, it is characterized in that, described encapsulating structure has five pins, wherein two pins connect two electrodes of the first transistor respectively, the two other pin connects two electrodes of transistor seconds respectively, a remaining common pin that pin is the first transistor and transistor seconds, this pin is connected with the electrode of the first transistor with the transistor seconds remainder.
[claim 10] a kind of active electron component according to claim 9 is characterized in that described five pins are positioned at the same side of described encapsulating structure.