CN101527341A - 三族氮化合物半导体发光二极管 - Google Patents
三族氮化合物半导体发光二极管 Download PDFInfo
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- CN101527341A CN101527341A CN200810083476A CN200810083476A CN101527341A CN 101527341 A CN101527341 A CN 101527341A CN 200810083476 A CN200810083476 A CN 200810083476A CN 200810083476 A CN200810083476 A CN 200810083476A CN 101527341 A CN101527341 A CN 101527341A
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- Prior art keywords
- layer
- quantum well
- emitting diode
- iii
- nitrogen compound
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 229910017464 nitrogen compound Inorganic materials 0.000 title claims abstract description 34
- 150000002830 nitrogen compounds Chemical class 0.000 title claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 18
- -1 nitride compound Chemical class 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 273
- 238000010586 diagram Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
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Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810083476 CN101527341B (zh) | 2008-03-07 | 2008-03-07 | 三族氮化合物半导体发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810083476 CN101527341B (zh) | 2008-03-07 | 2008-03-07 | 三族氮化合物半导体发光二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101527341A true CN101527341A (zh) | 2009-09-09 |
CN101527341B CN101527341B (zh) | 2013-04-24 |
Family
ID=41095108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200810083476 Expired - Fee Related CN101527341B (zh) | 2008-03-07 | 2008-03-07 | 三族氮化合物半导体发光二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101527341B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157646A (zh) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
CN103178170A (zh) * | 2011-12-23 | 2013-06-26 | 新世纪光电股份有限公司 | 固态发光元件 |
CN103972345A (zh) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN104733575A (zh) * | 2013-08-19 | 2015-06-24 | 新世纪光电股份有限公司 | 发光结构及包含该发光结构的半导体发光元件 |
US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
US9859462B2 (en) | 2012-12-06 | 2018-01-02 | Genesis Photonics Inc. | Semiconductor structure |
US10229977B2 (en) | 2016-09-19 | 2019-03-12 | Genesis Photonics Inc. | Nitrogen-containing semiconductor device |
US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US6955933B2 (en) * | 2001-07-24 | 2005-10-18 | Lumileds Lighting U.S., Llc | Light emitting diodes with graded composition active regions |
CN1230923C (zh) * | 2002-08-09 | 2005-12-07 | 洲磊科技股份有限公司 | 发光二极管结构 |
CN1431722A (zh) * | 2003-02-18 | 2003-07-23 | 华南师范大学 | Ⅲ族氮化物半导体蓝色发光器件 |
GB2407702A (en) * | 2003-10-28 | 2005-05-04 | Sharp Kk | A semiconductor light-emitting device |
JP3863177B2 (ja) * | 2004-04-16 | 2006-12-27 | ナイトライド・セミコンダクター株式会社 | 窒化ガリウム系発光装置 |
CN100336235C (zh) * | 2004-09-06 | 2007-09-05 | 璨圆光电股份有限公司 | 氮化镓系发光二极管结构 |
GB2432715A (en) * | 2005-11-25 | 2007-05-30 | Sharp Kk | Nitride semiconductor light emitting devices |
RU2315135C2 (ru) * | 2006-02-06 | 2008-01-20 | Владимир Семенович Абрамов | Метод выращивания неполярных эпитаксиальных гетероструктур на основе нитридов элементов iii группы |
-
2008
- 2008-03-07 CN CN 200810083476 patent/CN101527341B/zh not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157646A (zh) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
CN103178170A (zh) * | 2011-12-23 | 2013-06-26 | 新世纪光电股份有限公司 | 固态发光元件 |
CN103178170B (zh) * | 2011-12-23 | 2016-03-02 | 新世纪光电股份有限公司 | 固态发光元件 |
US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
US9859462B2 (en) | 2012-12-06 | 2018-01-02 | Genesis Photonics Inc. | Semiconductor structure |
CN103972345A (zh) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN108305922A (zh) * | 2013-01-25 | 2018-07-20 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN108550669A (zh) * | 2013-01-25 | 2018-09-18 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN108565319A (zh) * | 2013-01-25 | 2018-09-21 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN108565319B (zh) * | 2013-01-25 | 2020-10-02 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN108550669B (zh) * | 2013-01-25 | 2020-10-09 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
CN104733575A (zh) * | 2013-08-19 | 2015-06-24 | 新世纪光电股份有限公司 | 发光结构及包含该发光结构的半导体发光元件 |
US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
US10229977B2 (en) | 2016-09-19 | 2019-03-12 | Genesis Photonics Inc. | Nitrogen-containing semiconductor device |
US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
Also Published As
Publication number | Publication date |
---|---|
CN101527341B (zh) | 2013-04-24 |
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Effective date of registration: 20101117 Address after: No. two, No. 2, East Ring Road, Pinus tabulaeformis Industrial Zone, Longhua, Baoan District, Shenzhen, Guangdong, Applicant after: ZHANJING Technology (Shenzhen) Co.,Ltd. Co-applicant after: Advanced Optoelectronic Technology Inc. Address before: Hsinchu County, Taiwan, China Applicant before: Advanced Development Optoelectronics Co.,Ltd. |
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Effective date of registration: 20201126 Address after: No.999 Wanshou South Road, Chengnan street, Rugao City, Jiangsu Province (room 8a08-439, building 8, Rugao high tech Zone) Patentee after: RUGAO LANTU KNITTING CLOTHING Co.,Ltd. Address before: No. two, No. 2, East Ring Road, Pinus tabulaeformis Industrial Zone, Longhua, Baoan District, Shenzhen, Guangdong, Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Advanced Optoelectronic Technology Inc. |
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