CN101525736A - Intellectualization ceramic tile vacuum ion membrane plating equipment - Google Patents
Intellectualization ceramic tile vacuum ion membrane plating equipment Download PDFInfo
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- CN101525736A CN101525736A CN200810015111A CN200810015111A CN101525736A CN 101525736 A CN101525736 A CN 101525736A CN 200810015111 A CN200810015111 A CN 200810015111A CN 200810015111 A CN200810015111 A CN 200810015111A CN 101525736 A CN101525736 A CN 101525736A
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- vacuum
- intellectualization
- ceramic tile
- ion
- vacuum chamber
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Abstract
The invention belongs to the technical field of vacuum membrane plating, and in particular relates to intellectualization ceramic tile vacuum ion membrane plating equipment. The intellectualization ceramic tile vacuum ion membrane plating equipment comprises a vacuum chamber which is connected with a vacuum pumping system, a rotary piece rack type multifunctional sample table, voltaic arc metal ion sources which are uniformly distributed on both sides of the vacuum chamber and a PLC programmable centralized controller. The intellectualization ceramic tile vacuum ion membrane plating equipment is characterized in that the rotary piece rack type multifunctional sample table is isolated from the vacuum chamber; a washing electrode of a gas ion washing source is positioned on the rotary piece rack type multifunctional sample table and is connected with a gas ion washing power supply outside the vacuum chamber; and the number of the voltaic arc metal ion sources is 30, and the space between the ion sources and a plating piece is 150 millimeters. The intellectualization ceramic tile vacuum ion membrane plating equipment has the advantages of good quality and effect of a membrane plating layer, low loss, small volume and strong membrane-base bonding force.
Description
Technical field:
The invention belongs to technical field of vacuum plating, be specifically related to a kind of intellectualization ceramic tile vacuum ion membrane plating equipment.
Technical background:
Market is more and more high to architectural pottery goods, ceramic process product surface and aluminium nitride ceramic substrate surface metalation performance requriements, upgrade in order to make ceramic product specifications such as ceramic tile, occurred utilizing vacuum coating film equipment that ceramic surface is carried out plated film, and existing vacuum coating film equipment employing is that power frequency iron core arc welding machine carries out plated film, have that volume is big, loss is high, coating effects is poor, and complicated operation, defective that production efficiency is low.
Summary of the invention:
The objective of the invention is to overcome the prior art deficiency, provide a kind of coating process and schedule of operation simple, production efficiency height, the intellectualization ceramic tile vacuum ion membrane plating equipment that coating effects is good.
Technical scheme of the present invention is: a kind of intellectualization ceramic tile vacuum ion membrane plating equipment, comprise the vacuum chamber, commentaries on classics part posture multifunctional sample platform, the electric arc metal ion source that is distributed in the vacuum chamber both sides and the PLC Centralized Controller able to programme that link to each other with vacuum-pumping system, it is characterized in that changeing the insulation of part posture multifunctional sample platform and vacuum chamber, the cleaning electrode of gaseous ion irrigation source is positioned to be changeed on the part posture multifunctional sample platform, and clean power supply with the outer gaseous ion of vacuum chamber and link to each other, the electric arc metal ion source is 30, and ion source and plating piece spacing are 150mm.
Wherein, the power supply of described electric arc metal ion source adopts IGBT contravariant switch power supply, operating voltage 20-30V, working current 50-150A.
Described contravariant switch power supply rectifying part adopts the three phase full bridge rectification module, and the filtering part is by the chemical capacitor C of 8 470 μ f/450v
1-C
8Series and parallel is formed, positive and negative end 30K/12W discharging resistance in parallel R
1, R
2, direct current and alternating current converter adopt phase shifting control full-bridge inverting structure, switching tube Vt
1-Vt
4Composed in parallel by two IGBT single tubes respectively, and link to each other with phase-shift control circuit by the single resistance that separates separately, resonant inductance Lr connects with main power transformer T primary winding, and anti-magnetic bias stopping condenser adopts the CBB capacitor C of 41 μ f/630V
9-C
12Compose in parallel, main power transformer T magnetic core adopts FERRITE CORE, no-load voltage ratio N=8, the centre tapped way of full-wave rectification of secondary employing.
Owing to adopt technique scheme, compared with prior art have plating piece is carried out gaseous ion cleaning, the quality of coatings and effective; Being distributed in 30 arc sources in vacuum chamber both sides and plating piece spacing is 150mm, can reduce the particulate in the rete to greatest extent, makes the fine and close light of rete, reinforcing membrane-Ji bonding force, and significantly shortened rete and be coated with the time; Adopt IGBT contravariant switch power supply, with cathode arc light discharge ionization cathode targets, compare with traditional power frequency iron core arc welding machine have low-loss, volume is little, and power supply is output as the high-frequency impulse waveform, improve the cathode targets ionization level, made film careful, strengthened the advantage of film-Ji bonding force.
Description of drawings:
Come technical scheme of the present invention is described further below in conjunction with the drawings and specific embodiments.
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the left view of Fig. 1.
Fig. 3 is the schematic circuit diagram of contravariant switch power supply of the present invention.
Embodiment:
With reference to figure 1-Fig. 3, a kind of intellectualization ceramic tile vacuum ion membrane plating equipment, comprise vacuum chamber 4, the commentaries on classics part posture multifunctional sample platform 5 that links to each other with vacuum-pumping system 7, electric arc metal ion source 2 and the PLC Centralized Controller able to programme that is distributed in the vacuum chamber both sides, change part posture multifunctional sample platform 5 and vacuum chamber insulation, the cleaning electrode 6 of gaseous ion irrigation source is positioned to be changeed on the part posture multifunctional sample platform 5, and clean power supply 1 with the outer gaseous ion of vacuum chamber and link to each other, electric arc metal ion source 2 is 30, and ion source and plating piece 3 spacings are 150mm.The power supply of electric arc metal ion source adopts IGBT contravariant switch power supply, operating voltage 20-30V, working current 50-150A.Contravariant switch power supply rectifying part adopts the three phase full bridge rectification module, and the filtering part is by the chemical capacitor C of 8 470 μ f/450v
1-C
8Series and parallel is formed, positive and negative end 30K/12W discharging resistance in parallel R
1, R
2, direct current and alternating current converter adopt phase shifting control full-bridge inverting structure, switching tube Vt
1-Vt
4Composed in parallel by two IGBT single tubes respectively, and link to each other with phase-shift control circuit by the single resistance that separates separately, resonant inductance Lr connects with main power transformer T primary winding, and anti-magnetic bias stopping condenser adopts the CBB capacitor C of 41 μ f/630V
9-C
12Compose in parallel, main power transformer T magnetic core adopts FERRITE CORE, no-load voltage ratio N=8, the centre tapped way of full-wave rectification of secondary employing.
Claims (3)
1, a kind of intellectualization ceramic tile vacuum ion membrane plating equipment, comprise the vacuum chamber (4) that links to each other with vacuum-pumping system (7), change part posture multifunctional sample platform (5), be distributed in the electric arc metal ion source (2) and the PLC Centralized Controller able to programme of vacuum chamber both sides, it is characterized in that changeing part posture multifunctional sample platform (5) and vacuum chamber insulation, the cleaning electrode of gaseous ion irrigation source (6) is positioned to be changeed on the part posture multifunctional sample platform (5), and clean power supply (1) with the outer gaseous ion of vacuum chamber and link to each other, electric arc metal ion source (2) is 30, and ion source and plating piece (3) spacing is 150mm.
2,, it is characterized in that the power supply of described electric arc metal ion source adopts IGBT contravariant switch power supply, operating voltage 20-30V, working current 50-150A by the described a kind of intellectualization ceramic tile vacuum ion membrane plating equipment of claim 1.
3, by the described a kind of intellectualization ceramic tile vacuum ion membrane plating equipment of claim 2, it is characterized in that described contravariant switch power supply rectifying part adopts the three phase full bridge rectification module, the filtering part is by the chemical capacitor C of 8 470 μ f/450v
1-C
8Series and parallel is formed, positive and negative end 30K/12W discharging resistance in parallel R
1, R
2, direct current and alternating current converter adopt phase shifting control full-bridge inverting structure, switching tube Vt
1-Vt
4Composed in parallel by two IGBT single tubes respectively, and link to each other with phase-shift control circuit by the single resistance that separates separately, resonant inductance Lr connects with main power transformer T primary winding, and anti-magnetic bias stopping condenser adopts the CBB capacitor C of 41 μ f/630V
9-C
12Compose in parallel, main power transformer T magnetic core adopts FERRITE CORE, no-load voltage ratio N=8, the centre tapped way of full-wave rectification of secondary employing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810015111A CN101525736A (en) | 2008-03-04 | 2008-03-04 | Intellectualization ceramic tile vacuum ion membrane plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810015111A CN101525736A (en) | 2008-03-04 | 2008-03-04 | Intellectualization ceramic tile vacuum ion membrane plating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101525736A true CN101525736A (en) | 2009-09-09 |
Family
ID=41093804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810015111A Pending CN101525736A (en) | 2008-03-04 | 2008-03-04 | Intellectualization ceramic tile vacuum ion membrane plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101525736A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191787A (en) * | 2016-09-20 | 2016-12-07 | 深圳市东丽华科技有限公司 | The resistance-type evaporation coating machine of a kind of many vacuum chambers and operational approach thereof |
-
2008
- 2008-03-04 CN CN200810015111A patent/CN101525736A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191787A (en) * | 2016-09-20 | 2016-12-07 | 深圳市东丽华科技有限公司 | The resistance-type evaporation coating machine of a kind of many vacuum chambers and operational approach thereof |
| CN106191787B (en) * | 2016-09-20 | 2019-04-05 | 深圳市力沣实业有限公司 | A kind of the resistance-type evaporation coating machine and its operating method of more vacuum chambers |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090909 |