CN101523622B - 光电子器件 - Google Patents

光电子器件 Download PDF

Info

Publication number
CN101523622B
CN101523622B CN200780036465.0A CN200780036465A CN101523622B CN 101523622 B CN101523622 B CN 101523622B CN 200780036465 A CN200780036465 A CN 200780036465A CN 101523622 B CN101523622 B CN 101523622B
Authority
CN
China
Prior art keywords
electronic device
filter element
opto
radiation
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200780036465.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN101523622A (zh
Inventor
S·格罗特希
N·林德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101523622A publication Critical patent/CN101523622A/zh
Application granted granted Critical
Publication of CN101523622B publication Critical patent/CN101523622B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means

Landscapes

  • Led Device Packages (AREA)
  • Polarising Elements (AREA)
CN200780036465.0A 2006-09-29 2007-09-17 光电子器件 Expired - Fee Related CN101523622B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046277 2006-09-29
DE102006046277.7 2006-09-29
PCT/DE2007/001679 WO2008040298A1 (de) 2006-09-29 2007-09-17 Optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
CN101523622A CN101523622A (zh) 2009-09-02
CN101523622B true CN101523622B (zh) 2011-08-10

Family

ID=39091807

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780036465.0A Expired - Fee Related CN101523622B (zh) 2006-09-29 2007-09-17 光电子器件

Country Status (8)

Country Link
US (1) US8129737B2 (https=)
EP (1) EP2067177B1 (https=)
JP (1) JP2010505250A (https=)
KR (1) KR20090057059A (https=)
CN (1) CN101523622B (https=)
DE (1) DE112007002896A5 (https=)
TW (1) TWI371119B (https=)
WO (1) WO2008040298A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
CN102239578B (zh) * 2008-12-02 2015-06-03 皇家飞利浦电子股份有限公司 Led组件
US9711688B2 (en) 2008-12-02 2017-07-18 Koninklijke Philips N.V. Controlling LED emission pattern using optically active materials
KR101679063B1 (ko) * 2009-09-16 2016-11-24 코닌클리케 필립스 엔.브이. 사전정의된 각-색 좌표 분포를 갖는 발광 소자
US8552439B2 (en) * 2011-04-07 2013-10-08 Himax Display, Inc. Light-emitting diode package
CN103988326A (zh) * 2011-12-07 2014-08-13 皇家飞利浦有限公司 光束整形发光模块
CN102723421B (zh) * 2012-01-30 2014-12-10 深圳市光峰光电技术有限公司 波长转换装置和发光装置
CN104880896B (zh) * 2012-03-19 2017-06-20 深圳市光峰光电技术有限公司 照明装置和投影装置
US20230155085A1 (en) * 2020-04-08 2023-05-18 Ams-Osram International Gmbh Optoelectronic component and illumination device
DE102021123818A1 (de) 2021-09-15 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204670A (ja) * 1987-02-19 1988-08-24 Fujitsu Ltd 光半導体装置
JP3646732B2 (ja) * 1994-08-11 2005-05-11 ローム株式会社 フィルタ付き半導体発光素子
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
JP2001028457A (ja) * 1999-07-14 2001-01-30 Fuji Photo Film Co Ltd GaN系半導体発光素子
US7102158B2 (en) * 2000-10-23 2006-09-05 General Electric Company Light-based system for detecting analytes
JP2005519335A (ja) * 2002-03-06 2005-06-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 電子表示装置
WO2004068182A2 (en) * 2003-01-24 2004-08-12 Digital Optics International Corporation High density illumination system
US7091661B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a reflective polarizer
JP2004233802A (ja) * 2003-01-31 2004-08-19 Kobe Steel Ltd 遠赤外光学部品
JP2004347740A (ja) * 2003-05-21 2004-12-09 Hitachi Maxell Ltd 光学バンドパスフィルタ及びそれを用いた光学通信モジュール、光学バンドパスフィルタの製造方法
JP4817629B2 (ja) * 2004-09-15 2011-11-16 京セラ株式会社 発光素子およびその発光素子を用いた照明装置
WO2006035391A1 (en) * 2004-09-30 2006-04-06 Koninklijke Philips Electronics N.V. Brightness enhancement of led using selective ray angular recycling
WO2006035388A2 (en) * 2004-09-30 2006-04-06 Koninklijke Philips Electronics N.V. Phosphor-converted led with luminance enhancement through light recycling
US7274040B2 (en) * 2004-10-06 2007-09-25 Philips Lumileds Lighting Company, Llc Contact and omnidirectional reflective mirror for flip chipped light emitting devices
KR101214934B1 (ko) * 2005-01-27 2012-12-24 삼성디스플레이 주식회사 광학 렌즈, 이를 갖는 광학 모듈, 이를 갖는 백라이트어셈블리 및 이를 갖는 표시장치
JP2006120800A (ja) * 2004-10-20 2006-05-11 Sony Corp Cmos固体撮像素子
TWI257714B (en) * 2004-10-20 2006-07-01 Arima Optoelectronics Corp Light-emitting device using multilayer composite metal plated layer as flip-chip electrode
US20060091412A1 (en) 2004-10-29 2006-05-04 Wheatley John A Polarized LED
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7309151B2 (en) * 2005-04-11 2007-12-18 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting panel

Also Published As

Publication number Publication date
TWI371119B (en) 2012-08-21
WO2008040298A1 (de) 2008-04-10
CN101523622A (zh) 2009-09-02
US20100270569A1 (en) 2010-10-28
KR20090057059A (ko) 2009-06-03
DE112007002896A5 (de) 2009-09-03
JP2010505250A (ja) 2010-02-18
EP2067177B1 (de) 2017-04-19
TW200824156A (en) 2008-06-01
EP2067177A1 (de) 2009-06-10
US8129737B2 (en) 2012-03-06

Similar Documents

Publication Publication Date Title
CN101523622B (zh) 光电子器件
US8399898B2 (en) Polarized light emitting device
US8405104B2 (en) Luminescent diode chip with luminescence conversion element and angular filter element
US12145349B2 (en) Light emitting device and method of manufacturing light emitting device
US7408201B2 (en) Polarized semiconductor light emitting device
US20160093782A1 (en) Led with scattering features in substrate
EP2346101A1 (en) Light-emitting module, manufacturing method for light-emitting module, and light fixture unit
US11005012B2 (en) Wavelength converted light emitting device with textured substrate
CN109616567B (zh) 发光装置
US12027567B2 (en) Pixelated LED array with optical elements
KR20170026801A (ko) 반도체 발광소자 패키지 및 이를 이용한 광원모듈
CN101897044B (zh) 发射偏振辐射的半导体器件
US10825971B2 (en) Light-emitting device including a Distributed Bragg Reflector (DBR) film
KR20230138023A (ko) 광학 배열을 갖는 커버 구조를 갖는 발광 다이오드 패키지 및 제조 방법
JP6661964B2 (ja) 発光装置
US12051770B2 (en) Integration of secondary optics into chip covers for improved optical emission of high intensity light-emitting diodes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110810

CF01 Termination of patent right due to non-payment of annual fee