CN101522960A - 用于生产晶体硅基板的方法和设备 - Google Patents
用于生产晶体硅基板的方法和设备 Download PDFInfo
- Publication number
- CN101522960A CN101522960A CNA2007800365456A CN200780036545A CN101522960A CN 101522960 A CN101522960 A CN 101522960A CN A2007800365456 A CNA2007800365456 A CN A2007800365456A CN 200780036545 A CN200780036545 A CN 200780036545A CN 101522960 A CN101522960 A CN 101522960A
- Authority
- CN
- China
- Prior art keywords
- feed material
- fusing
- chimney
- melt pool
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
- Y10T117/1048—Pulling includes a horizontal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82724606P | 2006-09-28 | 2006-09-28 | |
US60/827,246 | 2006-09-28 | ||
PCT/US2007/079484 WO2008039816A1 (en) | 2006-09-28 | 2007-09-26 | Method and apparatus for the production of crystalline silicon substrates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012101769996A Division CN102719880A (zh) | 2006-09-28 | 2007-09-26 | 用于生产进料材料的连续带状物的方法和设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101522960A true CN101522960A (zh) | 2009-09-02 |
CN101522960B CN101522960B (zh) | 2012-07-25 |
Family
ID=38926128
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800365456A Expired - Fee Related CN101522960B (zh) | 2006-09-28 | 2007-09-26 | 用于生产晶体硅基板的方法和设备 |
CN2012101769996A Pending CN102719880A (zh) | 2006-09-28 | 2007-09-26 | 用于生产进料材料的连续带状物的方法和设备 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012101769996A Pending CN102719880A (zh) | 2006-09-28 | 2007-09-26 | 用于生产进料材料的连续带状物的方法和设备 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7608146B2 (zh) |
EP (1) | EP2094884A1 (zh) |
JP (1) | JP2010504905A (zh) |
KR (1) | KR20090055646A (zh) |
CN (2) | CN101522960B (zh) |
AU (1) | AU2007300183B2 (zh) |
WO (1) | WO2008039816A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102747419A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 一种多晶硅片生产装置及生产方法 |
CN106119955A (zh) * | 2016-08-01 | 2016-11-16 | 镇江大成新能源有限公司 | 一种硅片生产系统 |
CN107217296A (zh) * | 2017-04-28 | 2017-09-29 | 常州大学 | 一种硅片水平生长设备和方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008039816A1 (en) * | 2006-09-28 | 2008-04-03 | Bp Corporation North America Inc. | Method and apparatus for the production of crystalline silicon substrates |
US7855087B2 (en) * | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
US7998224B2 (en) | 2008-10-21 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Removal of a sheet from a production apparatus |
US8685162B2 (en) | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
US8764901B2 (en) | 2010-05-06 | 2014-07-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using elasticity and buoyancy |
US9267219B2 (en) | 2010-05-06 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Gas-lift pumps for flowing and purifying molten silicon |
US9057146B2 (en) * | 2010-08-24 | 2015-06-16 | Varian Semiconductor Equipment Associates, Inc. | Eddy current thickness measurement apparatus |
US9096946B2 (en) * | 2011-05-12 | 2015-08-04 | Korea Institute Of Energy Research | Reusable dual crucible for silicon melting and manufacturing apparatus of silicon slim plate including the same |
KR101411275B1 (ko) * | 2012-09-06 | 2014-06-25 | 주식회사수성기술 | 태양전지용 다결정 실리콘 제조장치 및 그 제조방법 |
US9725821B1 (en) | 2014-02-28 | 2017-08-08 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Cavity pull rod: device to promote single crystal growth from the melt |
US10179958B2 (en) * | 2016-09-16 | 2019-01-15 | Varian Semiconductor Equipment Associates, Inc | Apparatus and method for crystalline sheet growth |
EP3969641A4 (en) * | 2019-05-13 | 2023-01-25 | Leading Edge Equipment Technologies, Inc. | EXPOSURE OF A SILICON RIBBON TO A GAS IN AN OVEN |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2927008A (en) | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
US3469369A (en) * | 1966-12-29 | 1969-09-30 | Bell Telephone Labor Inc | Method for preparing and applying a viscous fluid |
US3681033A (en) * | 1969-01-31 | 1972-08-01 | Gen Motors Corp | Horizontal growth of crystal ribbons |
DE2633961C2 (de) | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
US4289571A (en) | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
US4627887A (en) * | 1980-12-11 | 1986-12-09 | Sachs Emanuel M | Melt dumping in string stabilized ribbon growth |
DE3132776A1 (de) * | 1981-08-19 | 1983-03-03 | Heliotronic Gmbh | Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial |
JPS5845191A (ja) * | 1981-09-14 | 1983-03-16 | エナジ−・マテリアルズ・コ−ポレイシヨン | 結晶性リボンを製造するための方法及び装置 |
DE3231326A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen |
DE3565558D1 (en) * | 1984-07-31 | 1988-11-17 | Siemens Ag | Process and apparatus for making silicon crystal films with a horizontal pulling direction |
US4650541A (en) | 1984-09-12 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals |
US5069742A (en) * | 1990-02-05 | 1991-12-03 | Bleil Carl E | Method and apparatus for crystal ribbon growth |
US6800137B2 (en) * | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
CA2283334A1 (en) | 1997-03-04 | 1998-09-11 | Astropower, Inc. | Columnar-grained polycrystalline solar cell substrate and improved method of manufacture |
JP4079548B2 (ja) * | 1999-04-30 | 2008-04-23 | 株式会社荏原製作所 | 結晶の連続引き上げ装置 |
US6402840B1 (en) * | 1999-08-10 | 2002-06-11 | Optoscint, Inc. | Crystal growth employing embedded purification chamber |
WO2008039816A1 (en) * | 2006-09-28 | 2008-04-03 | Bp Corporation North America Inc. | Method and apparatus for the production of crystalline silicon substrates |
-
2007
- 2007-09-26 WO PCT/US2007/079484 patent/WO2008039816A1/en active Application Filing
- 2007-09-26 EP EP07843197A patent/EP2094884A1/en not_active Withdrawn
- 2007-09-26 KR KR1020097008157A patent/KR20090055646A/ko not_active Application Discontinuation
- 2007-09-26 CN CN2007800365456A patent/CN101522960B/zh not_active Expired - Fee Related
- 2007-09-26 US US11/861,375 patent/US7608146B2/en not_active Expired - Fee Related
- 2007-09-26 JP JP2009530566A patent/JP2010504905A/ja active Pending
- 2007-09-26 AU AU2007300183A patent/AU2007300183B2/en not_active Ceased
- 2007-09-26 CN CN2012101769996A patent/CN102719880A/zh active Pending
-
2009
- 2009-10-09 US US12/576,614 patent/US8262795B2/en not_active Expired - Fee Related
-
2012
- 2012-05-23 US US13/478,302 patent/US8475590B2/en not_active Expired - Fee Related
-
2013
- 2013-06-06 US US13/911,180 patent/US20130298821A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102747419A (zh) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | 一种多晶硅片生产装置及生产方法 |
CN106119955A (zh) * | 2016-08-01 | 2016-11-16 | 镇江大成新能源有限公司 | 一种硅片生产系统 |
CN107217296A (zh) * | 2017-04-28 | 2017-09-29 | 常州大学 | 一种硅片水平生长设备和方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2008039816A1 (en) | 2008-04-03 |
JP2010504905A (ja) | 2010-02-18 |
US8262795B2 (en) | 2012-09-11 |
CN101522960B (zh) | 2012-07-25 |
US20120260849A1 (en) | 2012-10-18 |
US20080078321A1 (en) | 2008-04-03 |
CN102719880A (zh) | 2012-10-10 |
AU2007300183A1 (en) | 2008-04-03 |
US7608146B2 (en) | 2009-10-27 |
US20130298821A1 (en) | 2013-11-14 |
US8475590B2 (en) | 2013-07-02 |
KR20090055646A (ko) | 2009-06-02 |
AU2007300183B2 (en) | 2012-03-29 |
EP2094884A1 (en) | 2009-09-02 |
US20100025885A1 (en) | 2010-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: AMG IDEALCAST SOLAR CORP. Free format text: FORMER OWNER: BP NORTH AMERICA CORP. Effective date: 20110425 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: ILLINOIS, THE USA TO: MARYLAND, THE USA |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20110425 Address after: Maryland USA Applicant after: Amg Idealcast Solar Corp. Address before: Illinois State Applicant before: BP Corporation North America Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 Termination date: 20150926 |
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EXPY | Termination of patent right or utility model |