CN101521218A - Image display system - Google Patents
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- CN101521218A CN101521218A CN200810006329A CN200810006329A CN101521218A CN 101521218 A CN101521218 A CN 101521218A CN 200810006329 A CN200810006329 A CN 200810006329A CN 200810006329 A CN200810006329 A CN 200810006329A CN 101521218 A CN101521218 A CN 101521218A
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Abstract
The invention relates to an image display system that comprises a self-luminous display device. The self-luminous display device comprises: an array substrate, a light-emitting diode, a first drive thin film transistor and a second drive thin film transistor. The array substrate is provided with a pixel region in which the light-emitting diode is arranged. The first and the second drive thin film transistors are electrically connected to the light-emitting diode. The first drive thin film transistor comprises a first grid superposed on the pixel region of the array substrate and an active layer. The second drive thin film transistor comprises an active layer and a second grid superposed on the active layer. In the same picture period, the first grid is coupled to a first voltage; and the second grid is coupled to a second voltage different from the first voltage. By virtue of extra added drive thin film transistors and a bias voltage applied to restore electrons trapped in a grid dielectric layer, the image display system can prevent the deviation of starting voltage and additionally increase the aperture rate of pixel.
Description
Technical field
The present invention relates to the image display system of a kind of light emitting diode indicator (LED display) technical field, particularly relate to a kind of have can suppress to open make voltage (threshold voltage) skew, can prevent simultaneously the image display system of the self-emission display apparatus that aperture opening ratio descends, and a kind of image display system manufacture method with this self-emission display apparatus.
Background technology
In recent years, along with the progress of electronic product Development Technology and increasingly extensive application thereof, it similarly is the city of asking of mobile phone, personal digital assistant (PDA) and notebook computer, feasible flat-panel screens (the flat panel display that compares with traditional monitor with smaller size smaller and power consumption characteristic, FPD) demand grows with each passing day, and becomes to make one of important electron application product at present.In the middle of flat-panel screens, because Organic Light-Emitting Device (organic electroluminescent/light-emitting, OELD/OLED) have characteristics such as self-luminous, high brightness, wide viewing angle, high answer speed and processing procedure be easy, make OLED undoubtedly will become next optimal selection of flat-panel screens from generation to generation.
One of main trend of plane Display Technique is to develop the OLED with high-luminous-efficiency and long life, thereby develops and the active-matrix formula Organic Light-Emitting Device (active matrix OLED) of use thin-film transistor as driving element.
Active-matrix formula Organic Light-Emitting Device (AMOLED) is used polysilicon or the amorphous silicon active layers (active layer) as thin-film transistor usually.Yet during operation, the electronics in the active layers is absorbed in easily in gate dielectric and causes to open and makes voltage (threshold voltage, Vth; Be threshold voltage, below all be called to open make voltage) skew.Because injection current (inject current, size Id), and open and make the voltage increase can cause the decline of injection current and OLED is affected are depended in the brightness (luminance) of OLED.
This shows that above-mentioned existing image display system obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of image display system of new structure, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing image display system exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of image display system of new structure, can improve general existing image display system, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to, overcome the defective that existing image display system exists, and provide a kind of image display system of new structure, technical problem to be solved is to make it by extra increase by one drive thin film transistors in pixel (picture element) structure and by applying a bias voltage, be absorbed in electronics in gate dielectric with answer, and then prevent to open the skew that makes voltage, be very suitable for practicality.
Another object of the present invention is to, a kind of image display system of new structure is provided, technical problem to be solved is that it is stacked and placed on the former drive thin film transistors by the drive thin film transistors that will additionally increase, can increase the aperture opening ratio (apcrture ratio) of pixel (picture element), thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of image display system that the present invention proposes, it comprises a self-emission display apparatus, comprising: array basal plate, and it has a pixel (be picture element, below all be called pixel) district; One light-emitting diode is arranged at this pixel region of this array base palte; One first drive thin film transistors is electrically connected to this light-emitting diode, and comprises a first grid and an active layers on this pixel region that is stacked and placed on this array base palte; And one second drive thin film transistors, be electrically connected to this light-emitting diode, and comprise this active layers and be stacked and placed on a second grid on this active layers; Wherein under same picture cycle, this first grid is coupled to one first voltage, and this second grid is coupled to one second voltage that is different from this first voltage.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid image display system, wherein said self-emission display apparatus more comprises: one first storage capacitors comprise one first electrode and one second electrode on this pixel region that is stacked and placed on this array base palte, and this first electrode is electrically connected to this first grid; And one second storage capacitors, comprise this second electrode and be stacked and placed on a third electrode on this second electrode, and this third electrode is electrically connected to this second grid.
Aforesaid image display system, it more comprises: a light-emitting display panel comprises this self-emission display apparatus; And a controller, be coupled to this self-emission display apparatus, make this self-emission display apparatus provide image according to input in order to control this self-emission display apparatus.
Aforesaid image display system, wherein this system comprises an electronic installation, it comprises this light-emitting display panel.
Aforesaid image display system, wherein said electronic installation comprises: escope or Portable digital video disk player on notebook computer, mobile phone, digital still camera, personal digital assistant, desktop computer, television set, the car.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of image display system that the present invention proposes, it comprises a self-emission display apparatus, comprising: array basal plate, and it has a pixel region; One light-emitting diode is arranged at this pixel region of this array base palte; One first drive thin film transistors is electrically connected to this light-emitting diode, and comprises a first grid and an active layers on this pixel region that is stacked and placed on this array base palte; One second drive thin film transistors is electrically connected to this light-emitting diode, and comprises this active layers and be stacked and placed on a second grid on this active layers; One first storage capacitors comprise one first electrode and one second electrode on this pixel region that is stacked and placed on this array base palte, and this first electrode is electrically connected to this first grid; And one second storage capacitors, comprise this second electrode and be stacked and placed on a third electrode on this second electrode, and this third electrode is electrically connected to this second grid.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid image display system, wherein under same picture cycle, this first grid is coupled to one first voltage, and this second grid is coupled to one second voltage, and this first voltage has identical size and opposite polarity with this second voltage.
Aforesaid image display system, it more comprises: a light-emitting display panel comprises this self-emission display apparatus; And a controller, be coupled to this self-emission display apparatus, make this self-emission display apparatus provide image according to input in order to control this self-emission display apparatus.
Aforesaid image display system, wherein this system comprises an electronic installation, it comprises this light-emitting display panel.
Aforesaid image display system, wherein said electronic installation comprises: escope or Portable digital video disk player on notebook computer, mobile phone, digital still camera, personal digital assistant, desktop computer, television set, the car.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows:
For achieving the above object, the embodiment of the invention provides a kind of image display system, and it comprises a self-emission display apparatus.This self-emission display apparatus comprises: array basal plate, a light-emitting diode, one first drive thin film transistors and one second drive thin film transistors.This array base palte has a pixel region, and light-emitting diode is arranged at the pixel region of array base palte.This first drive thin film transistors is electrically connected to light-emitting diode, and comprises a first grid and an active layers on the pixel region that is stacked and placed on array base palte.This second drive thin film transistors is electrically connected to light-emitting diode, and comprises this active layers and be stacked and placed on a second grid on the active layers.Wherein, under same picture cycle, first grid is coupled to one first voltage, and second grid is coupled to one second voltage that is different from first voltage.
In addition, for achieving the above object, the embodiment of the invention also provides a kind of image display system, and it comprises a self-emission display apparatus.This self-emission display apparatus comprises: array basal plate, a light-emitting diode, one first drive thin film transistors, one second drive thin film transistors, one first storage capacitors and one second storage capacitors.This array base palte has a pixel region, and light-emitting diode is arranged at the pixel region of array base palte.This first drive thin film transistors is electrically connected to light-emitting diode, and comprises a first grid and an active layers on the pixel region that is stacked and placed on array base palte.This second drive thin film transistors is electrically connected to light-emitting diode, and comprises this active layers and be stacked and placed on a second grid on the active layers.This first storage capacitors comprises one first electrode and one second electrode on the pixel region that is stacked and placed on array base palte, and first electrode is electrically connected to first grid.This second storage capacitors comprises second electrode and is stacked and placed on a third electrode on second electrode, and third electrode is electrically connected to second grid.
By technique scheme, image display system of the present invention has following advantage and beneficial effect at least:
1, image display system of the present invention because light-emitting diode is to be driven in turn by first and second drive thin film transistors, and utilizes the thin-film transistor that drives that electronics is sent back in the active layers, is offset voltage and can avoid opening.Therefore, the present invention increases by a drive thin film transistors and by applying a bias voltage by extra in pixel (picture element) structure, is absorbed in electronics in gate dielectric with answer, and then can effectively prevents to open the skew that makes voltage, is very suitable for practicality.
2 moreover, image display system of the present invention, because second drive thin film transistors and second storage capacitors are to be stacked and placed on respectively on first drive thin film transistors and first storage capacitors, so the aperture opening ratio of pixel region can not descend because of the quantity that increases drive thin film transistors and storage capacitors.Therefore, the present invention is stacked and placed on the former drive thin film transistors by the drive thin film transistors that will additionally increase, and can increase the aperture opening ratio (aperture ratio) of pixel (picture element), thereby be suitable for practicality more.
In sum, the invention relates to a kind of image display system, it comprises a self-emission display apparatus.This self-emission display apparatus comprises: array basal plate, a light-emitting diode, first and second drive thin film transistors.Array base palte has a pixel region, and light-emitting diode is arranged at the pixel region of array base palte.First and second drive thin film transistors is electrically connected to light-emitting diode.First drive thin film transistors comprises a first grid and the active layers on the pixel region that is stacked and placed on array base palte.Second drive thin film transistors comprises this active layers and is stacked and placed on a second grid on the active layers.Under same picture cycle (frame), first grid is coupled to one first voltage, and second grid is coupled to one second voltage that is different from first voltage.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on the structure of product or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing image display system has the outstanding effect of enhancement, thereby being suitable for practicality more, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A to Fig. 1 G illustrates according to the image display system with self-emission display apparatus of the embodiment of the invention and the structural profile schematic diagram of manufacture method thereof.
Fig. 2 is the equivalent circuit diagram that illustrates self-emission display apparatus among Fig. 1 G.
Fig. 3 A, Fig. 3 B and Fig. 3 B-1 are the drive thin film transistors operation charts that illustrates self-emission display apparatus among Fig. 1 G.
Fig. 4 illustrates the block schematic diagram of image display system according to another embodiment of the present invention.
100: array base palte (infrabasal plate) 102: resilient coating
104,114: conductive layer 104a, 114a: grid
104b, 108b, 114b: electrode 106,112: insulating barrier
107: semiconductor layer 108: active layers
108a: source/drain regions 108c: lightly mixed drain area
110: photoresist design layer 111: heavy ion cloth is planted
115: light ion cloth plants 116: inner layer dielectric layer
118: flatness layer 119: interlayer hole
120: source/drain (conductive layer) 300: self-emission display apparatus
400: light-emitting display panel 500: controller
600: electronic installation C1: first storage capacitors
C2: the second storage capacitors D: light-emitting diode
DT1: the first drive thin film transistors DT2: second drive thin film transistors
E: electronics P: pixel region
V1, V2: voltage Vdd, Vss: voltage source
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of image display system, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can be known to present in the following detailed description that cooperates with reference to graphic preferred embodiment.By the explanation of embodiment, when can being to reach technological means that predetermined purpose takes and effect to get one more deeply and concrete understanding to the present invention, yet appended graphic only provide with reference to the usefulness of explanation, be not to be used for the present invention is limited.
Below cooperate embodiment that image display system of the present invention and manufacture method thereof are described.See also Fig. 1 G and shown in Figure 2, wherein Fig. 1 G is the embodiment of an image display system of the present invention, is to illustrate according to the image display system with self-emission display apparatus of the embodiment of the invention and the structural profile schematic diagram of manufacture method thereof; Fig. 2 is the equivalent circuit diagram of self-emission display apparatus among Fig. 1 G, is the electrical connection figure (or equivalent circuit diagram) that shows Fig. 1 G structure.This image display system comprises: a self-emission display apparatus 300, for example one has sharp motor light-emitting device (0LED).One image display system of preferred embodiment of the present invention comprises an infrabasal plate (below be called array base palte) the 100 and one upper substrate (not shown) that is oppositely arranged.This array base palte 100 and upper substrate can be transparency carrier, for example glass, quartz or other transparent materials.Usually array base palte 100 comprises that plural number is defined the plural pixel region that forms by scan line and data (data) line.For simplicity of illustration, only show a wherein pixel region P herein.
Moreover the pixel region P of above-mentioned array base palte 100 is provided with a light-emitting diode D (not being illustrated in Fig. 1 G), first and second drive thin film transistors DT1 and DT2 and first and second storage capacitors C1 and C2; Wherein:
This first drive thin film transistors DT1 can be N type or P type.In the present embodiment, be to describe as example with N type thin-film transistor (NTFT).This first drive thin film transistors DT1, it comprises: a grid 104a, an insulating barrier (as gate dielectric) 106, have source/drain regions 108a and lightly doped drain (lightly doped drain, LDD) active layers 108 of district 108c and the source/drain (drain electrode is drain, and this paper all is called drain electrode) 120 that is electrically connected to source/drain regions 108a.Grid 104a and active layers 108 are stacked and placed on the pixel region P of array base palte 100 in regular turn.
This second drive thin film transistors DT2 can be N type or P type.In the present embodiment, be to describe as example with N type thin-film transistor (NTFT).This second drive thin film transistors DT2, it comprises: a grid 114a, an insulating barrier (as gate dielectric) 112, active layers 108 and source/drain 120.Grid 114a is stacked and placed on the active layers 108, and aligned in general is in grid 104a.In the present embodiment, shared active layers 108 of first and second drive thin film transistors DT1 and DT2 and source/drain 120.
This first storage capacitors C1 comprises: two electrode 104b and 108b and a therebetween insulating barrier (as capacitance dielectric layer) 106.Two electrode 104b and 108b are stacked and placed on the pixel region P of array base palte 100 in regular turn.
This second storage capacitors C2 comprises: two electrode 108b and 114b and a therebetween insulating barrier (as capacitance dielectric layer) 112.Electrode 114b is stacked and placed on the electrode 108b, and aligned in general is in electrode 104b.In the present embodiment, first and second storage capacitors C1 and C2 common electrode 108b.Moreover electrode 108b extends from active layers 108.That is electrode 108b and active layers 108 are formed by the definition of same material layer, for example, and a polysilicon or amorphous silicon layer.
The input that sees also first and second drive thin film transistors DT1 shown in Figure 2, above-mentioned and DT2 is electrically connected to the electrode of first and second storage capacitors C1 and C2 (that is, electrode 108b), and is coupled to a voltage source V dd.Moreover the output of first and second drive thin film transistors DT1 and DT2 is electrically connected to light-emitting diode D, and this light-emitting diode D is coupled to a voltage source V ss who is lower than voltage source V dd current potential.The control end of the first drive thin film transistors DT1 (promptly, grid 104a) another electrode that is electrically connected to the first storage capacitors C1 (promptly, electrode 104b), and the control end of the second drive thin film transistors DT2 (promptly, grid 114a) is electrically connected to another electrode (that is electrode 114b) of the second storage capacitors C2.
In the present embodiment, when self-emission display apparatus 300 is operated, under same picture cycle (frame), the grid 104a of the first drive thin film transistors DT1 is coupled to a voltage V1, and the grid 114a of the second drive thin film transistors DT2 is coupled to a voltage V2, and wherein voltage V1 can have identical size and opposite polarity with voltage V2.
Seeing also shown in Fig. 3 A, Fig. 3 B and Fig. 3 B-1, is the operation chart that illustrates the drive thin film transistors DT1 and the DT2 of self-emission display apparatus 300 among Fig. 1 G.As shown in Figure 3A, under a picture cycle, the grid 104a of the first drive thin film transistors DT1 is coupled to a voltage V1, and its polarity is for negative, and the grid 114a of the second drive thin film transistors DT2 is coupled to a voltage V2, and its polarity is for just.Therefore, electric field E direction is for from top to bottom, shown in arrow among the figure, and by the second drive thin film transistors DT2 driven for emitting lights diode D.Thus, the electronics e that is arranged in active layers 108 can be absorbed in the gate dielectric 112 in the second drive thin film transistors DT2, causes the second drive thin film transistors DT2 to open when driving easily next time voltage is offset.Therefore, when next picture cycle, the polarity of voltage V1 is just transferred to, and that the polarity of voltage V2 transfers to is negative, makes electric field E direction for from bottom to top, shown in arrow among the figure, and by the first drive thin film transistors DT1 driven for emitting lights diode D.Thus, the electronics e that is absorbed in gate dielectric 112 can get back to active layers 108, prevents from that the second drive thin film transistors DT2 from opening next time voltage is offset, when driving shown in Fig. 3 B.
Can under this picture cycle, be absorbed in gate dielectric 106 (shown in Fig. 3 B-1) though be arranged in the electronics e of active layers 108 in the first drive thin film transistors DT1, cause the first drive thin film transistors DT1 to open when driving easily is offset voltage next time, but can be by under next picture cycle, transferring to the polarity of voltage V1 negative, and the polarity of voltage V2 just transfers to, make electric field E direction be from top to bottom (that is, by the second drive thin film transistors DT2 driven for emitting lights diode D).Thus, the electronics e that is absorbed in gate dielectric 106 can get back to active layers 108, prevents from that the first drive thin film transistors DT1 from opening next time voltage is offset when driving.In other embodiment, voltage V1 also can have identical polarity and different sizes with voltage V2, and can avoid opening by similar methods voltage is offset.
Seeing also shown in Figure 1A to Fig. 1 G, is to show according to the image display system with self-emission display apparatus of the embodiment of the invention and the structural profile schematic diagram of manufacture method thereof.Shown in Figure 1A, array basal plate 100 is provided, for example clear glass or quartz, it has a pixel region P.On array base palte 100, form a resilient coating 102 and a conductive layer 104 in regular turn.This resilient coating 102 can be a single layer structure, for example is an one silica layer or a silicon nitride layer.It also can be sandwich construction, for example is made of an one silica layer and a silicon nitride layer.Conductive layer 104 can be a metal level, and for example aluminium (Al), silver (Ag), molybdenum (Mo), aluminium neodymium (AlNd) alloy or its combination constitute.Conductive layer 104 can form by existing known deposition technique, for example sputtering method.
See also shown in Figure 1B, conductive layer 104 is implemented little shadow and etch process, in pixel region P, to define the grid 104a that is used for drive thin film transistors and to be used for an electrode 104b of storage capacitors.Afterwards, on resilient coating 102, form an insulating barrier 106 and semi-conductor layer 107 in regular turn, and cover gate 104a and electrode 104b.The insulating barrier 106 of cover gate 104a is as gate dielectric, and the insulating barrier 106 of coated electrode 104b is as capacitance dielectric layer.Insulating barrier 106 can be a single layer structure, for example is an one silica layer or a silicon nitride layer.It also can be sandwich construction, for example is made of an one silica layer and a silicon nitride layer.Semiconductor layer 107 can be polysilicon layer or amorphous silicon layer.
See also shown in Fig. 1 C, can on the semiconductor layer above the grid 104a 107, form a photoresist design layer 110, then utilize photoresist design layer 110 to plant the cover curtain as cloth, so that semiconductor layer 107 is implemented heavy ion cloth value 111, has the active layers 108 of source/drain regions 108a and on the insulating barrier above the grid 104a 106, form, and form electrode 108b on the insulating barrier above the electrode 104b 106, wherein electrode 104b, electrode 108b and insulating barrier 106 are to constitute one first storage capacitors C1.
See also shown in Fig. 1 D, after removing photoresist design layer 110, above the electrode 108b of active layers 108, form an insulating barrier 112 and a conductive layer 114 in regular turn in active layers 108 and extension.Insulating barrier 112 can be a single layer structure, for example is an one silica layer or a silicon nitride layer.It also can be sandwich construction, for example is made of an one silica layer and a silicon nitride layer.Conductive layer 114 can be a metal level, and for example aluminium (Al), silver (Ag), molybdenum (Mo), aluminium neodymium (AlNd) alloy or its combination constitute, and can form by existing conventional deposition technique, for example sputtering method.The insulating barrier 112 that covers active layers 108 is as gate dielectric, and the insulating barrier 112 of coated electrode 108b is as capacitance dielectric layer.
See also shown in Fig. 1 E, conductive layer 114 is implemented little shadow and etch process, on the insulating barrier above the active layers 108 112, to form grid 114a, and on the insulating barrier above the electrode 108b 112, form electrode 114b, wherein, grid 114a aligned in general grid 104a, and electrode 114b aligned in general electrode 104b.Electrode 108b, electrode 114b and insulating barrier 112 are to constitute one second storage capacitors C2.Then, utilize grid 114a to plant the cover curtain as cloth, so that active layers 108 is implemented light ion cloth value 115, (it is adjacent to source/drain regions 108a for lightly doped drain, LDD) district 108c and form lightly doped drain therein.
See also shown in Fig. 1 F, on insulating barrier 112, form an internal layer dielectric (interlayerdielectric, ILD) layer 116 and one flatness layer (or protective layer) 118, and cover gate 114a and electrode 114b in regular turn.Afterwards, etching flatness layer 118, ILD layer 116, and insulating barrier 112 in regular turn expose source/drain regions 108a with interlayer hole 119 therein.
See also shown in Fig. 1 G, insert conductive layer 120, to be electrically connected to source/drain regions 108a at interlayer hole 119.Conductive layer 120 can be a metal level, and for example aluminium (Al), silver (Ag), molybdenum (Mo), aluminium neodymium (AlNd) alloy or its combination constitute, in order to the source/drain as thin-film transistor.In the present embodiment, grid 104a, insulating barrier 106, active layers 108 and source/drain 120 are to constitute one first drive thin film transistors DT1, and grid 114a, insulating barrier 112, active layers 108 and source/drain 120 are to constitute the second drive thin film transistors DT2.
According to above-mentioned present embodiment,, therefore can avoid opening voltage is offset because light-emitting diode D drives in turn by first and second drive thin film transistors DT1 and DT2, and utilizes the thin-film transistor that drives that electronics e is sent back in the active layers 108.Moreover, because the second drive thin film transistors DT2 and the second storage capacitors C2 are stacked and placed on respectively on the first drive thin film transistors DT1 and the first storage capacitors C1, so the aperture opening ratio of pixel region P can not descend because of the quantity that increases drive thin film transistors and storage capacitors.
See also shown in Figure 4, be to illustrate the block schematic diagram of image display system according to another embodiment of the present invention, it is the image display system that shows another embodiment of the present invention, wherein this system is embodied as a self-emission display apparatus or an electronic installation, for example escope or Portable digital video disk (DVD) player on notebook computer, mobile phone, digital still camera, personal digital assistant (PDA), desktop computer, television set, the car.In other embodiments, above-mentioned self-emission display apparatus can be incorporated in the display floater, and it can be a light-emitting display panel.As shown in Figure 4, light-emitting display panel 400 comprises that one is illustrated in the self-emission display apparatus 300 of Fig. 1 G.In other embodiments, light-emitting display panel can be incorporated in the electronic installation.As shown in Figure 4, electronic installation 600 comprises: a light-emitting display panel 400 and a controller 500 with self-emission display apparatus 300 are coupled to self-emission display apparatus 300, and its middle controller 500 is to provide image in order to control self-emission display apparatus 300 according to input.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1, a kind of image display system is characterized in that it comprises a self-emission display apparatus, comprising:
Array basal plate, it has a pixel region;
One light-emitting diode is arranged at this pixel region of this array base palte;
One first drive thin film transistors is electrically connected to this light-emitting diode, and comprises a first grid and an active layers on this pixel region that is stacked and placed on this array base palte; And
One second drive thin film transistors is electrically connected to this light-emitting diode, and comprises this active layers and be stacked and placed on a second grid on this active layers;
Wherein under same picture cycle, this first grid is coupled to one first voltage, and this second grid is coupled to one second voltage that is different from this first voltage.
2, image display system according to claim 1 is characterized in that wherein said self-emission display apparatus more comprises:
One first storage capacitors comprise one first electrode and one second electrode on this pixel region that is stacked and placed on this array base palte, and this first electrode is electrically connected to this first grid; And
One second storage capacitors comprises this second electrode and be stacked and placed on a third electrode on this second electrode, and this third electrode is electrically connected to this second grid.
3, image display system according to claim 1 is characterized in that it more comprises:
One light-emitting display panel comprises this self-emission display apparatus; And
One controller is coupled to this self-emission display apparatus, makes this self-emission display apparatus provide image according to input in order to control this self-emission display apparatus.
4, image display system according to claim 3 is characterized in that wherein this system comprises an electronic installation, and it comprises this light-emitting display panel.
5, image display system according to claim 4 is characterized in that wherein said electronic installation comprises: escope or Portable digital video disk player on notebook computer, mobile phone, digital still camera, personal digital assistant, desktop computer, television set, the car.
6, a kind of image display system is characterized in that it comprises a self-emission display apparatus, comprising:
Array basal plate, it has a pixel region;
One light-emitting diode is arranged at this pixel region of this array base palte;
One first drive thin film transistors is electrically connected to this light-emitting diode, and comprises a first grid and an active layers on this pixel region that is stacked and placed on this array base palte;
One second drive thin film transistors is electrically connected to this light-emitting diode, and comprises this active layers and be stacked and placed on a second grid on this active layers;
One first storage capacitors comprise one first electrode and one second electrode on this pixel region that is stacked and placed on this array base palte, and this first electrode is electrically connected to this first grid; And
One second storage capacitors comprises this second electrode and be stacked and placed on a third electrode on this second electrode, and this third electrode is electrically connected to this second grid.
7, image display system according to claim 6, it is characterized in that wherein under same picture cycle, this first grid is coupled to one first voltage, and this second grid is coupled to one second voltage, and this first voltage has identical size and opposite polarity with this second voltage.
8, image display system according to claim 6 is characterized in that it more comprises:
One light-emitting display panel comprises this self-emission display apparatus; And
One controller is coupled to this self-emission display apparatus, makes this self-emission display apparatus provide image according to input in order to control this self-emission display apparatus.
9, image display system according to claim 8 is characterized in that wherein this system comprises an electronic installation, and it comprises this light-emitting display panel.
10, image display system according to claim 9 is characterized in that wherein said electronic installation comprises: escope or Portable digital video disk player on notebook computer, mobile phone, digital still camera, personal digital assistant, desktop computer, television set, the car.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100063293A CN101521218B (en) | 2008-02-26 | 2008-02-26 | Image display system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100063293A CN101521218B (en) | 2008-02-26 | 2008-02-26 | Image display system |
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| CN101521218A true CN101521218A (en) | 2009-09-02 |
| CN101521218B CN101521218B (en) | 2012-12-12 |
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| CN2008100063293A Active CN101521218B (en) | 2008-02-26 | 2008-02-26 | Image display system |
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Cited By (4)
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| CN109742113A (en) * | 2019-01-08 | 2019-05-10 | 京东方科技集团股份有限公司 | A kind of array substrate, preparation method and relevant apparatus |
| CN111105754A (en) * | 2018-10-26 | 2020-05-05 | 三星显示有限公司 | Scan driver and display device including the same |
| WO2021035991A1 (en) * | 2019-08-23 | 2021-03-04 | 武汉华星光电技术有限公司 | Array substrate, manufacturing method therefor, and display panel |
| CN112967680A (en) * | 2021-03-18 | 2021-06-15 | 合肥京东方卓印科技有限公司 | Pixel structure, driving method thereof and display substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI642047B (en) * | 2018-01-26 | 2018-11-21 | 鼎展電子股份有限公司 | Flexible micro-led display module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101142996B1 (en) * | 2004-12-31 | 2012-05-08 | 재단법인서울대학교산학협력재단 | Display device and driving method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111105754A (en) * | 2018-10-26 | 2020-05-05 | 三星显示有限公司 | Scan driver and display device including the same |
| CN109742113A (en) * | 2019-01-08 | 2019-05-10 | 京东方科技集团股份有限公司 | A kind of array substrate, preparation method and relevant apparatus |
| CN109742113B (en) * | 2019-01-08 | 2020-12-25 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and related device |
| US11271049B2 (en) | 2019-01-08 | 2022-03-08 | Boe Technology Group Co., Ltd. | Array substrate, preparation method thereof and related device |
| WO2021035991A1 (en) * | 2019-08-23 | 2021-03-04 | 武汉华星光电技术有限公司 | Array substrate, manufacturing method therefor, and display panel |
| CN112967680A (en) * | 2021-03-18 | 2021-06-15 | 合肥京东方卓印科技有限公司 | Pixel structure, driving method thereof and display substrate |
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| CN101521218B (en) | 2012-12-12 |
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