CN101515538B - Sealing structure for processing reaction chamber by semiconductor - Google Patents
Sealing structure for processing reaction chamber by semiconductor Download PDFInfo
- Publication number
- CN101515538B CN101515538B CN2008100579305A CN200810057930A CN101515538B CN 101515538 B CN101515538 B CN 101515538B CN 2008100579305 A CN2008100579305 A CN 2008100579305A CN 200810057930 A CN200810057930 A CN 200810057930A CN 101515538 B CN101515538 B CN 101515538B
- Authority
- CN
- China
- Prior art keywords
- curved surface
- surface connecting
- connecting portion
- hermetically
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a sealing structure for processing a reaction chamber by semiconductor, which comprises cover plates which are mutually connected and jointly form the reaction chamber, a side wall of the chamber and an electrostatic clamping disc, wherein the joint of the side wall of the chamber and the cover plates and/or electrostatic clamping disc is provided with a clamping piece provided with a sealing piece; and the joint of the side wall of the chamber and the cover plates and/or electrostatic clamping disc is at least provided with a curved surface connecting part, and the inclination angle between the curved surface connecting part and the joint is between 0 and 90 degrees. The length of a gap is lengthened by changing the shape of the gap between the sealing surfaces of the vacuum ends, thereby prolonging the route by which chemical gases and plasmas reach a sealing ring and reducing the amount of the chemical gases and plasmas reaching the sealing ring; and simultaneously, the passing difficulty of the chemical gases and plasmas are greatly increased due to the curved shape, thereby prolonging the service life of the sealing ring.
Description
Technical field
The present invention relates to a kind of hermetically-sealed construction, particularly relate to a kind of hermetically-sealed construction that is used for processing reaction chamber by semiconductor and prolongs the employed sealing ring life-span.
Background technology
At present, semiconductor wafer processing is mainly carried out under vacuum environment.Vacuum environment is by pump the gas in the reaction chamber to be taken away to realize that the closed environment of reaction chamber is realized by sealing ring.Can use a lot of chemical gas and plasma apparatus in the course of processing of semiconductor wafer, wherein inductance coupled plasma device is widely used, as dry etching equipment, chemical vapour deposition (CVD).Its principle is: under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, plasma is made up of charged electronics and ion, gas in the reaction chamber is under the bump of electronics, except being transformed into ion, can also absorbing energy and form a large amount of active groups.Active reactive group and be etched material surface generation chemical reaction and physical reactions, reaction product breaks away from the material surface that is etched, and is extracted out cavity by vacuum system.
Fig. 1 has shown the structural representation of a kind of inductively coupled plasma equipment commonly used at present.The closed environment of reaction chamber is to realize sealing by sealing ring 300 between quartzy cover plate 20 and the reaction chamber 10 and the sealing ring 300 between electrostatic chuck 60 and reaction chamber.Process gas enters reaction chamber 10 by pipeline by the air inlet A that is fixed on the quartzy cover plate 20, under the exciting of the coil 100 that has applied radio-frequency power supply, process gas is ionized into plasma, plasma is under the driving of bias voltage, deposit being adsorbed on wafer 50 on the electrostatic chuck 60, etching, the product after the etching is pumped away by bleeding point B.
Fig. 2 is existing the most frequently used hermetically-sealed construction, it is to process the rectangular seal groove on one of parts of forming confined space, sealing ring is fixed among the seal groove, making sealing ring produce strain by another parts to the extruding of sealing ring then realizes inside and outside isolated, thereby realize sealing, this hermetically-sealed construction is applied in the semicon industry widely.
The defective of above-mentioned prior art is, the processing of semiconductor wafer tends to use various chemical gas and plasma, in hermetically-sealed construction as shown in Figure 2, the upper-lower seal face is the plane, and can not contact fully, always exist the gap, and the slit between two planes is a vertical masonry joint, this just makes chemical gas and plasma know from experience and touches sealing ring by this vertical masonry joint, and chemical gas and plasma are known from experience sealing ring generation corrosiveness, this just makes the life-span of sealing ring reduce, and needs regular replacing.
Summary of the invention
Technical problem to be solved by this invention is, overcomes the defective of above-mentioned prior art and a kind of hermetically-sealed construction that is used for processing reaction chamber by semiconductor that can increase the service life is provided.
For achieving the above object, the present invention takes following design:
A kind of hermetically-sealed construction that is used for processing reaction chamber by semiconductor of the present invention, comprise the cover plate, chamber sidewall and the electrostatic chuck that interconnect and form reaction chamber jointly, junction at described chamber sidewall and cover plate and/or electrostatic chuck is provided with fastener, fastener is provided with seal, also be provided with at least one place curved surface connecting portion in the junction of described chamber sidewall and cover plate or electrostatic chuck, be 0～an angle of 90 degrees between described curved surface connecting portion and the described junction.
Preferably, be provided with at least two place's curved surface connecting portions, described curved surface connecting portion is the triangle curved surface at least one lateral bending song in described junction, or the rectangle curved surface, or cambered surface, or the combination of above-mentioned curved surface.Further, described curved surface connecting portion comprises the groove that is positioned at junction one side, and the projection that is positioned at the junction opposite side and matches with described groove.
Preferably, at least one side of described curved surface connecting portion, also be provided with second seal.Further, on the both sides of described curved surface connecting portion, be equipped with second seal that cooperatively interacts.
Preferably, described curved surface connecting portion becomes 1～45 degree with described junction, and described curved surface connecting portion is with respect to the close reaction chamber of described seal.Described curved surface connecting portion and described cover plate or chamber sidewall or electrostatic chuck are made into integration.Both sides in described junction are equipped with fastener, and described seal is adaptive between the fastener of both sides, described junction.Described fastener is trapezoidal groove or convex.
Advantage of the present invention is: because the present invention is by changing the shape in slit between the vacuum end sealing surface, make the length in slit obtain lengthening, that is: prolonged chemical gas and plasma path to sealing ring, thereby reduced the chemical gas of sealing ring and the amount of plasma of arriving, simultaneously tortuous shape has increased the difficulty that chemical gas and plasma pass through greatly, thereby has prolonged the life-span of sealing ring.
Description of drawings
Fig. 1 is the structural representation of inductively coupled plasma equipment in the prior art;
Fig. 2 is the hermetically-sealed construction of prior art;
Fig. 3 is the structural representation of first kind of embodiment of the present invention;
Fig. 4 is the structural representation of second kind of embodiment of the present invention;
Fig. 5 is the structural representation of the third embodiment of the present invention;
Fig. 6 is the structural representation of the 4th kind of embodiment of the present invention;
Fig. 7 is the structural representation of the 5th kind of embodiment of the present invention;
Fig. 8 is the structural representation of the 6th kind of embodiment of the present invention;
Fig. 9 A is the structural representation of the 7th kind of embodiment of the present invention;
Fig. 9 B also is the structural representation of the 7th kind of embodiment of the present invention
Figure 10 is the structural representation of the 8th kind of embodiment of the present invention.
Embodiment
Referring to 1 and Fig. 3～Figure 10, a kind of preferred embodiment that is used for the hermetically-sealed construction of processing reaction chamber by semiconductor of the present invention shown in it, comprise the cover plate 20 that interconnects and form reaction chamber 10 jointly, chamber sidewall 2 and electrostatic chuck 60, junction 30 at described chamber sidewall 2 and cover plate 20 and/or electrostatic chuck 60 is provided with fastener 3, usually preferably, (chamber sidewall 2 and the junction 30 of cover plate 20 and the junction 30 of chamber sidewall 2 and electrostatic chuck 60) is equipped with fastener 3 two junctions 30, this fastener 3 can be structure that can the snap fit seal in the various prior aries, for example groove or boss, be preferably trapezoidal groove in the present embodiment, fastener 3 is provided with seal 4, be that described seal 4 is buckled in the trapezoidal fastener 3 of upper surface area less than the lower surface area, as shown in Figure 3.And preferably, be equipped with fastener 3 in the both sides of described junction 30, for example both sides be provided with cooperatively interact can snap fit seal 4 protruding (not shown in FIG.), described seal 4 is adaptive between the fastener 3 of 30 both sides, described junction.Junction 30 at described chamber sidewall 2 and cover plate 20 or electrostatic chuck 60 also is provided with at least one place curved surface connecting portion 5, is 0～an angle of 90 degrees between described curved surface connecting portion 5 and the described junction 30, does not comprise 0 degree and an angle of 90 degrees.Preferably, on two junctions 30, be equipped with curved surface connecting portion 5.Described curved surface connecting portion 5 can be the various shapes that cooperatively interact, as being upwardly extending triangle among Fig. 4; It among Fig. 5 the right angle that extends downwards; Fig. 6 is upwardly extending rectangle; Fig. 7 is upwardly extending semicircle, and Fig. 8 is extend downwards trapezoidal; Combination between the various curved surfaces be extended and be carried out to above-mentioned described shape can to any side in the both sides of junction 30, the size of extending also can change according to the wall thickness of device, and indication shape triangle, right angle, rectangle, trapezoidal and semicircle etc. are shaped as the shape in 30 cross sections, junction.Certainly, be used to change the feature of seam shape between the vacuum end sealing surface, be not limited in the foregoing description.And the structure in the foregoing description goes for the junction 30 between chamber sidewall 2 and the cover plate 20, also goes for the junction 30 of chamber sidewall 2 and electrostatic chuck 60.
Referring to Fig. 9 A and Fig. 9 B, present embodiment is for being provided with at least two place's curved surface connecting portions 5, and this curved surface connecting portion 5 is the triangle curved surface to described junction 30 at least one lateral bending songs, or the rectangle curved surface, or cambered surface, or the combination of above-mentioned curved surface.The part of perhaps utilizing 30 both sides, junction to cooperatively interact forms curved surface connecting portion 30, shown in Fig. 9 B.
More specifically, referring to Fig. 4, described curved surface connecting portion 5 comprises the groove 51 that is positioned at junction 30 1 examples, and the projection 52 that is positioned at junction 30 opposite sides and matches with described groove 51.This groove 51 and projection 52 can lay respectively on cover plate 20, chamber sidewall 2 and the electrostatic chuck 60.
Referring to Figure 10, in this preferred embodiment, also be provided with second seal 41 at least one side of described curved surface connecting portion 5.Preferably, on the both sides of described curved surface connecting portion 5, be equipped with second seal 41 that cooperatively interacts.
And, for improving sealing effectiveness, 30 one-tenth 1～45 degree of connecting portion of curved surface described in the present invention 5 and described junction.And described curved surface connecting portion 5 is than described seal 4 more close reaction chambers 10, and in addition, two parts that described curved surface connecting portion 5 cooperatively interacts can be respectively be made into integration with described cover plate 20 or chamber sidewall 2 or electrostatic chuck 60.
Operation principle of the present invention is: by changing sealing surface vacuum shape on one side, reduce the corrosion to sealing ring of various chemical gas and plasma, thereby prolong the life-span of sealing ring.As shown in Figure 3, the step-feature of a projection of processing on the parts up, recessed step-feature of processing on lower part, the direct angle of its side and horizontal plane also can be 90 degree vertical with horizontal plane between 0～90 degree.Just become meander-shaped in the slit between vacuum end two sealing surfaces after the sealing like this, compare with vertical masonry joint, chemical gas and plasma are longer through the path that tortuous slit arrives sealing ring, and increased its difficulty of passing through, thereby reduced the corrosion of chemical gas and plasma, prolonged the life-span of sealing ring sealing ring.
Obviously, those of ordinary skill in the art can constitute various types of hermetically-sealed constructions with a kind of hermetically-sealed construction that is used for processing reaction chamber by semiconductor of the present invention.
The foregoing description is only for the usefulness that the present invention is described; and be not to be limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also should belong to category of the present invention, and scope of patent protection of the present invention should be limited by each claim.
Claims (10)
1. hermetically-sealed construction that is used for processing reaction chamber by semiconductor, comprise the cover plate (20) that interconnects and form reaction chamber (10) jointly, chamber sidewall (2) and electrostatic chuck (60), two junctions (30) at described chamber sidewall (2) and cover plate (20) and/or chamber sidewall (2) and electrostatic chuck (60) are provided with fastener (3), fastener (3) is provided with seal (4), it is characterized in that: the junction (30) at described chamber sidewall (2) and cover plate (20) or electrostatic chuck (60) also is provided with at least one place's curved surface connecting portion (5), and the angle between described curved surface connecting portion (5) and described junction (30) is spent less than 90 greater than 0 degree.
2. hermetically-sealed construction according to claim 1, it is characterized in that: be provided with at least two place's curved surface connecting portions (5), described curved surface connecting portion (5) is the triangle curved surface at least one lateral bending song in described junction (30), or the rectangle curved surface, or cambered surface, or the combination of above-mentioned curved surface.
3. hermetically-sealed construction according to claim 2 is characterized in that: described curved surface connecting portion (5) comprises the groove (51) that is positioned at junction (30) one sides, and the projection (52) that is positioned at junction (30) opposite side and matches with described groove (51).
4. according to the described hermetically-sealed construction of claim 1～3, it is characterized in that: at least one side of described curved surface connecting portion (5), also be provided with second seal (41).
5. hermetically-sealed construction according to claim 4 is characterized in that: be equipped with second seal (41) that cooperatively interacts on the both sides of described curved surface connecting portion (5).
6. hermetically-sealed construction according to claim 1 is characterized in that: described curved surface connecting portion (5) becomes 1～45 degree with described junction (30).
7. hermetically-sealed construction according to claim 6 is characterized in that: described curved surface connecting portion (5) is with respect to the close reaction chamber (10) of described seal (4).
8. hermetically-sealed construction according to claim 7 is characterized in that: described curved surface connecting portion (5) and described cover plate (20) or chamber sidewall (2) or electrostatic chuck (60) are made into integration.
9. hermetically-sealed construction according to claim 1 is characterized in that: be equipped with fastener (3) in the both sides of described junction (30), described seal (4) is adaptive to be positioned between the fastener (3) of both sides, described junction (30).
10. hermetically-sealed construction according to claim 9 is characterized in that: described fastener (3) is trapezoidal groove or convex.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100579305A CN101515538B (en) | 2008-02-21 | 2008-02-21 | Sealing structure for processing reaction chamber by semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100579305A CN101515538B (en) | 2008-02-21 | 2008-02-21 | Sealing structure for processing reaction chamber by semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101515538A CN101515538A (en) | 2009-08-26 |
| CN101515538B true CN101515538B (en) | 2010-12-08 |
Family
ID=41039937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100579305A Active CN101515538B (en) | 2008-02-21 | 2008-02-21 | Sealing structure for processing reaction chamber by semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101515538B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107960965A (en) * | 2017-12-13 | 2018-04-27 | 佛山市顺德区美的洗涤电器制造有限公司 | Drawer dishwasher |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102949964B (en) * | 2011-08-30 | 2015-04-15 | 沈阳铝镁设计研究院有限公司 | Sealing ring protector for impregnating tank |
| CN103527783A (en) * | 2012-07-05 | 2014-01-22 | 上海宏力半导体制造有限公司 | Sealing device for plasma tube device cover body in ASP cavity |
| CN102943879A (en) * | 2012-10-25 | 2013-02-27 | 无锡市欣田机械有限公司 | Sealing system of chemical raw material reaction pot |
| CN104747539B (en) * | 2013-12-26 | 2017-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of sealing device and plasma processing device |
| CN104930191A (en) * | 2014-03-19 | 2015-09-23 | 上海华虹宏力半导体制造有限公司 | Wafer box door improvement structure |
| CN105097607B (en) * | 2014-05-22 | 2019-02-19 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and its cleaning method |
| CN104766778A (en) * | 2015-03-31 | 2015-07-08 | 上海华力微电子有限公司 | Plasma etching equipment cavity sealing face protecting device |
| CN106011790A (en) * | 2016-06-07 | 2016-10-12 | 上海纳米技术及应用国家工程研究中心有限公司 | ALD cavity door cover |
| CN108512166B (en) * | 2018-05-16 | 2023-11-21 | 河南森源电气股份有限公司 | Dense bus duct connection structure, dense bus duct and connector |
| CN114597108A (en) * | 2020-12-04 | 2022-06-07 | 中国科学院微电子研究所 | Semiconductor manufacturing equipment and processing chamber and gas generating device thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3695482A (en) * | 1971-06-14 | 1972-10-03 | Lummus Co | Pressure vessel seal |
| EP0659942A2 (en) * | 1993-12-24 | 1995-06-28 | IDT INDUSTRIE- und DICHTUNGSTECHNIK GmbH | Sealing ring between a cover and a manhole entrance to an enamelled tank |
| US5676757A (en) * | 1994-03-28 | 1997-10-14 | Tokyo Electron Limited | Decompression container |
| US5683523A (en) * | 1992-08-24 | 1997-11-04 | Nissan Motor Co., Ltd. | Titanium alloy for super high vacuum vessels |
| US5887746A (en) * | 1997-11-24 | 1999-03-30 | Pilot Industries, Inc. | High vacuum housing with improved sealing means |
-
2008
- 2008-02-21 CN CN2008100579305A patent/CN101515538B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3695482A (en) * | 1971-06-14 | 1972-10-03 | Lummus Co | Pressure vessel seal |
| US5683523A (en) * | 1992-08-24 | 1997-11-04 | Nissan Motor Co., Ltd. | Titanium alloy for super high vacuum vessels |
| EP0659942A2 (en) * | 1993-12-24 | 1995-06-28 | IDT INDUSTRIE- und DICHTUNGSTECHNIK GmbH | Sealing ring between a cover and a manhole entrance to an enamelled tank |
| US5676757A (en) * | 1994-03-28 | 1997-10-14 | Tokyo Electron Limited | Decompression container |
| US5887746A (en) * | 1997-11-24 | 1999-03-30 | Pilot Industries, Inc. | High vacuum housing with improved sealing means |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107960965A (en) * | 2017-12-13 | 2018-04-27 | 佛山市顺德区美的洗涤电器制造有限公司 | Drawer dishwasher |
| CN107960965B (en) * | 2017-12-13 | 2020-11-24 | 佛山市顺德区美的洗涤电器制造有限公司 | Drawer type dish washer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101515538A (en) | 2009-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101515538B (en) | Sealing structure for processing reaction chamber by semiconductor | |
| US9082593B2 (en) | Electrode having gas discharge function and plasma processing apparatus | |
| TW201703918A (en) | Substrate lift pin actuator | |
| EP2659946B1 (en) | Apparatus for processing exhaust fluid | |
| JP2013519790A (en) | Gas distribution showerhead with coating material for semiconductor processing | |
| CN101385127A (en) | Sealed elastomer bonded si electrodes and the like for reduced particle contamination in dielectric etch | |
| KR20100109477A (en) | Substrate processing apparatus | |
| US20230219120A1 (en) | Cover plate bearing device, cover plate cleaning device and cleaning method for cover plate | |
| CN104377155A (en) | Electrostatic chuck and plasma processing equipment | |
| CN105047593A (en) | Non-contact transfer hand | |
| CN101667524B (en) | Reaction chamber and plasma treatment device applying same | |
| US7914603B2 (en) | Particle trap for a plasma source | |
| KR101642129B1 (en) | Plasma reactor for eco_frindly processing | |
| CN107974669A (en) | Vacuum chuck and processing chamber | |
| US20150059910A1 (en) | Plasma cvd apparatus, method for forming film and dlc-coated pipe | |
| KR20100027383A (en) | System for eliminating waste gases by making us of plasmas at low and high pressure | |
| CN100362622C (en) | Lower-extraction type etching device | |
| CN102094186A (en) | Gas supply equipment | |
| CN101113517A (en) | Substrate processing apparatus | |
| CN113430644B (en) | Exhaust device and semiconductor device | |
| CN110779357B (en) | Device with multistage cooling | |
| US20200388470A1 (en) | Baffle implementation for improving bottom purge gas flow uniformity | |
| KR101040632B1 (en) | Apparatus for preventing counterflow of by-product for exhaust air duct of semiconductor manufacturing process | |
| KR100669856B1 (en) | Device for connecting two pipes and apparatus for processing a semiconductor substrate using the same | |
| CN101355009B (en) | Etching device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 south two floor, M5 building, 1 Jiuxianqiao East Road, Chaoyang District, Beijing. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |