CN101510498B - Method and system for reducing semiconductor chip particle contamination - Google Patents
Method and system for reducing semiconductor chip particle contamination Download PDFInfo
- Publication number
- CN101510498B CN101510498B CN2008100577511A CN200810057751A CN101510498B CN 101510498 B CN101510498 B CN 101510498B CN 2008100577511 A CN2008100577511 A CN 2008100577511A CN 200810057751 A CN200810057751 A CN 200810057751A CN 101510498 B CN101510498 B CN 101510498B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- electrostatic field
- generating means
- field generating
- particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for reducing the particulate pollution of a semiconductor substrate, and a system thereof, pertaining to the field of semiconductor processing and manufacture. The method includes the steps that a semiconductor substrate is transferred to a substrate transfer station by an atmospheric mechanical arm; particles adsorbed on the surface of the semiconductor substrate are adsorbed and removed by an electrostatic field generating device; the adsorbed and removed particles are blown away by an air filtering and distributing device; and the semiconductor substrate is removed out of the substrate transfer station by the atmospheric mechanical arm. The system comprises the atmospheric mechanical arm, the substrate transfer station, the air filtering and distributing device, an ion generator and the electrostatic field generating device. In the invention, the electrostatic field generating device is added at the atmospheric end of a transfer system to control the adsorption mode of the particles of the semiconductor substrate so as to effectively reduce the particulate pollution during the transfer process of the semiconductor substrate and improve the rate of finished semiconductor substrate.
Description
Technical field
The present invention relates to field of semiconductor processing and manufacturing, particularly a kind of method and system that reduce semiconductor chip particle contamination.
Background technology
In the moving process of semiconductor chip, typically use the atmosphere manipulator semiconductor chip is moved to the vacuum reaction chamber from the transmission system atmosphere end.In order to reduce semiconductor chip particle contamination in the moving process, the general method that adopts is to adhere to the purpose that reaches particle control by reducing transmission system atmosphere end particle, its concrete realization means mainly contain the air-flow of control transmission system atmosphere end, pure air after for example will filtering feeds the transmission system atmosphere end with certain wind speed, and in methods such as transmission system atmosphere end installation ion generators.Adopt above-mentioned two kinds of methods to realize that the principle that reduces semiconductor chip particle contamination is: as shown in Figure 1, at the top of transmission system atmosphere end the air filtration air-supply arrangement is installed, this device blows away the suspended particulate of transmission system atmosphere end; In addition, also ion generator is installed at the top of transmission system atmosphere end, it is mainly used in the particle that neutralization has interdependent polarity with ion generator, avoid particle to be adsorbed onto on the heteropolarity electrified body of surface of semiconductor chip, make that this part particle also can be by the air-flow band from the transmission system atmosphere end, and then realize the purpose of semiconductor chip particle control.
But the method for control air-flow is for because the particle that adheres to of action of gravity has apparent in view effect, and for the particle DeGrain of Electrostatic Absorption; The method of ion generator in the transmission system atmosphere end not the charged particle of charged particle and dissimilar polarities have and control effect preferably, and bad for the control effect of the charged particle of identical polar.The polarity of the non-electroneutral particle that produces in some semiconducter process process can change along with the difference of processing technology, and ion generator can not solve the problem of the charged particle of identical polar.
Summary of the invention
In order to reduce semiconductor chip because the particle contamination that electrostatic influence caused the invention provides a kind of method that reduces semiconductor chip particle contamination, described method comprises:
Steps A: the atmosphere manipulator moves to the substrate terminal with semiconductor chip;
Step B: the electrostatic field generating means with the particle of described surface of semiconductor chip absorption inhale from;
Step C: the air filtration air-supply arrangement blows away the particle that is sucked from;
Step D: described atmosphere manipulator shifts out described substrate terminal with described semiconductor chip.
Described electrostatic field generating means is installed in described substrate terminal.
Described substrate terminal is specially the substrate buffer unit in the transmission system atmosphere end.
Described substrate terminal is positioned on the movement locus of described atmosphere manipulator.
The present invention also provides a kind of system that reduces semiconductor chip particle contamination, described system comprises atmosphere manipulator, substrate terminal, air filtration air-supply arrangement and ion generator, described system also comprises the electrostatic field generating means, and described electrostatic field generating means is used for the Electrostatic Absorption particle of failing on the semiconductor chip by described ion generator is eliminated is eliminated.
Described electrostatic field generating means comprises that electrostatic field generator controller, top electrode, bottom electrode and electric field strength detect display unit;
Described electrostatic field generator controller is used to adjust the electrostatic field field intensity between described top electrode and the bottom electrode;
Described electric field strength detects display unit, is used to detect and shows electrostatic field field intensity between described top electrode and the bottom electrode.
Described electric field strength detects display unit and the electrostatic field generator controller integrates.
Described electrostatic field generating means is installed in described substrate terminal.
The beneficial effect of technical scheme provided by the invention is: the present invention is by adding the electrostatic field generating means in the transmission system atmosphere end, control the adhering mode of semiconductor chip particle, thereby reduced the particle contamination in the semiconductor chip moving process effectively, improved the rate of finished products of semiconductor chip.
Description of drawings
Fig. 1 is the principle schematic that reduces semiconductor chip particle contamination in the prior art;
Fig. 2 is the method flow diagram of the minimizing semiconductor chip particle contamination that provides of the embodiment of the invention;
Fig. 3 is the system schematic of the minimizing semiconductor chip particle contamination that provides of the embodiment of the invention;
Fig. 4 is that the electrostatic field generating means that provides of the embodiment of the invention is inhaled the principle schematic from the semiconductor chip attaching particles.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
The embodiment of the invention is that the substrate terminal in the transmission system atmosphere end installs the electrostatic field generating means additional, utilize the gravitation of electric field that the Electrostatic Absorption particle of failing on the semiconductor chip by ion generator is eliminated is eliminated, and then reach the purpose of semiconductor chip particle control.The substrate terminal can be specially the substrate buffer unit in the transmission system atmosphere end, and perhaps the substrate terminal is positioned on the movement locus of atmosphere manipulator.Be that example illustrates the technical scheme that the embodiment of the invention provides with the substrate buffer unit as the substrate terminal below.
Referring to Fig. 2, the method for the minimizing semiconductor chip particle contamination that the embodiment of the invention provides specifically may further comprise the steps:
Step 101: the atmosphere manipulator is positioned over semiconductor chip in air filtration air-supply arrangement in the transmission system atmosphere end and the ion generator and handles;
The clean wind that the air filtration air-supply arrangement is sent can blow away the bigger particle of volume ratio that adheres in the transmission system and on the semiconductor chip; Ion generator produces a kind of ion of polarity, it is used in the transmission system and the charged particle opposite with ion polarity its generation that adhere to neutralization on the semiconductor chip, will reduce the particle that is adsorbing owing to static reason on the semiconductor chip like this, and the clean wind of sending by the air filtration air-supply arrangement is with these particles transmission system atmosphere end of blowing off; The clean wind that the air filtration air-supply arrangement is sent flows out by air outlet;
Step 102: the atmosphere manipulator will move on the substrate buffer unit through the semiconductor chip after air filtration air-supply arrangement and the ion generator processing;
The substrate buffer unit is usually located at the position of non-installation air filtration air-supply arrangement and ion generator in the transmission system, and it mainly acts on is substrate terminal as placing semiconductor chip; The installation site of substrate buffer unit can be chosen according to concrete actual conditions;
Step 103: the electrostatic field generating means with the particle of surface of semiconductor chip absorption inhale from;
Under the effect of electrostatic field generating means, the particle of surface of semiconductor chip absorption is sucked from; For the Electrostatic Absorption particle of failing on the semiconductor chip by ion generator is eliminated is eliminated, generally the electrostatic field that produced of electrostatic field generating means is the electrostatic field that is used to inhale from these particles, the field intensity direction that is electrostatic field will guarantee that these particles can be sucked from, thereby reaches the purpose of control semiconductor chip particle; Under the effect of electrostatic field generating means, the charged particle that the ion with the ion generator generation of surface of semiconductor chip absorption has identical polar is sucked from; In actual applications, the carried charge of the electrostatic field field intensity that produces of the electrostatic field generating means particle that can adhere to according to semiconductor chip is adjusted;
Step 104: the clean wind that the air filtration air-supply arrangement is sent blows away the particle that is sucked from;
The volume of the particle that the wind speed of air filtration air-supply arrangement can adhere to according to semiconductor chip is adjusted; The clean wind that the air filtration air-supply arrangement is sent blow away by the electrostatic field generating means inhale from the particle that adheres to of surface of semiconductor chip, and then reduce semiconductor chip particle contamination;
Step 105: the semiconductor chip after the atmosphere manipulator will be handled through the electrostatic field generating means shifts out the substrate buffer unit.
Present embodiment is that the electrostatic field generating means is installed in substrate buffer unit in the transmission system atmosphere end, in concrete production practices, the electrostatic field generating means can also be installed in the transmission system atmosphere end on the chirokinesthetic track of atmosphere machinery, equally also can reach and reduce the semiconductor chip particle contamination purpose, its realization principle and present embodiment are in full accord, repeat no more here.
In addition, the method that present embodiment provides can also be applied to the process reaction chamber of whole semiconductor processing equipment, and in the mobile route of semiconductor chip, for example vacuum lock chamber and vacuum transmission cavity or the like.
Referring to Fig. 3, the embodiment of the invention also provides a kind of system that reduces semiconductor chip particle contamination, this system comprises atmosphere manipulator, substrate terminal, air filtration air-supply arrangement and ion generator, this system also comprises the electrostatic field generating means, and the electrostatic field generating means is used for the Electrostatic Absorption particle of failing on the semiconductor chip by ion generator is eliminated is eliminated.
As shown in Figure 4, the electrostatic field generating means comprises that electrostatic field generator controller, top electrode, bottom electrode and electric field strength detect display unit; Wherein, electric field strength detection display unit is used to detect the electrostatic field field intensity between top electrode and the bottom electrode, and show detected electrostatic field field intensity, and it shows that output can realize by numeral or analog in form, for example digital segment encode shows or pointer shows or the like; In the practical application, electric field strength detects display unit and can integrate with the electrostatic field generator controller.
In concrete production practices, the electrostatic field generating means can be installed in the substrate terminal; The substrate terminal can be specially the substrate buffer unit in the transmission system atmosphere end, and perhaps the substrate terminal is positioned on the movement locus of atmosphere manipulator.
The embodiment of the invention is by adding the electrostatic field generating means in the transmission system atmosphere end, control the adhering mode of semiconductor chip particle, so neither influence the output capacity of transmission system, can reduce the particle contamination in the semiconductor chip moving process again, improved the rate of finished products of semiconductor chip.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a method that reduces semiconductor chip particle contamination is characterized in that, described method comprises:
Steps A: the atmosphere manipulator moves to the substrate terminal with semiconductor chip;
Step B: the electrostatic field generating means with the particle of described surface of semiconductor chip absorption inhale from;
Step C: the air filtration air-supply arrangement blows away the particle that is sucked from;
Step D: described atmosphere manipulator shifts out described substrate terminal with described semiconductor chip.
2. the method for minimizing semiconductor chip particle contamination as claimed in claim 1 is characterized in that, described electrostatic field generating means is installed in described substrate terminal.
3. the method for minimizing semiconductor chip particle contamination as claimed in claim 1 or 2 is characterized in that, described substrate terminal is specially the substrate buffer unit in the transmission system atmosphere end.
4. the method for minimizing semiconductor chip particle contamination as claimed in claim 1 or 2 is characterized in that, described substrate terminal is positioned on the movement locus of described atmosphere manipulator.
5. system that reduces semiconductor chip particle contamination, described system comprises the atmosphere manipulator, the substrate terminal, air filtration air-supply arrangement and ion generator, described atmosphere manipulator is positioned over described air filtration air-supply arrangement and described ion generator with semiconductor chip, it is characterized in that, described system also comprises the electrostatic field generating means, described atmosphere manipulator will be positioned over described electrostatic field generating means through the semiconductor chip after described air filtration air-supply arrangement and the processing of described ion generator, described electrostatic field generating means is used for the Electrostatic Absorption particle of failing on the semiconductor chip by described ion generator is eliminated is eliminated, and described electrostatic field generating means is installed in described substrate terminal.
6. the system of minimizing semiconductor chip particle contamination as claimed in claim 5 is characterized in that, described electrostatic field generating means comprises that electrostatic field generator controller, top electrode, bottom electrode and electric field strength detect display unit;
Described electrostatic field generator controller is used to adjust the electrostatic field field intensity between described top electrode and the bottom electrode;
Described electric field strength detects display unit, is used to detect and shows electrostatic field field intensity between described top electrode and the bottom electrode.
7. the system of minimizing semiconductor chip particle contamination as claimed in claim 6 is characterized in that, described electric field strength detects display unit and the electrostatic field generator controller integrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100577511A CN101510498B (en) | 2008-02-15 | 2008-02-15 | Method and system for reducing semiconductor chip particle contamination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100577511A CN101510498B (en) | 2008-02-15 | 2008-02-15 | Method and system for reducing semiconductor chip particle contamination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101510498A CN101510498A (en) | 2009-08-19 |
| CN101510498B true CN101510498B (en) | 2010-09-01 |
Family
ID=41002846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100577511A Active CN101510498B (en) | 2008-02-15 | 2008-02-15 | Method and system for reducing semiconductor chip particle contamination |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101510498B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403199A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for removing surface particles of wafer |
| DE102015101420B3 (en) * | 2015-01-30 | 2015-12-10 | Infineon Technologies Ag | Method for low-contamination generation of a layer with a bonding agent on a joining partner, a method for low-contamination production of a material bond between a joining partner and a metal layer, and system for carrying out these methods |
| CN105448667A (en) * | 2015-12-23 | 2016-03-30 | 苏州工业园区纳米产业技术研究院有限公司 | Wafer surface smudge cleaning method |
| CN109560030B (en) * | 2017-09-26 | 2024-02-09 | Tcl环鑫半导体(天津)有限公司 | Automatic circular silicon wafer rewinding machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191039A (en) * | 1995-07-18 | 1998-08-19 | 塞米法布公司 | Docking and environmental purefying system for integrated circuit wafer transport assemblies |
| CN1575205A (en) * | 2001-10-29 | 2005-02-02 | 宝洁公司 | Apparatus and method for purifying air |
-
2008
- 2008-02-15 CN CN2008100577511A patent/CN101510498B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191039A (en) * | 1995-07-18 | 1998-08-19 | 塞米法布公司 | Docking and environmental purefying system for integrated circuit wafer transport assemblies |
| CN1575205A (en) * | 2001-10-29 | 2005-02-02 | 宝洁公司 | Apparatus and method for purifying air |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101510498A (en) | 2009-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101510498B (en) | Method and system for reducing semiconductor chip particle contamination | |
| CN202649668U (en) | Automatic mask cleaning system and exposure equipment | |
| CN102097292A (en) | Cleaning method for transfer arm, cleaning method for substrate processing apparatus and substrate processing apparatus | |
| WO2008147233A3 (en) | Process of electrostatic recirculation for dedusting and gas cleaning and device thereof | |
| KR20160068116A (en) | Fine dust agglomerating apparatus | |
| CN205289123U (en) | Base plate surface cleaning device | |
| CN107695035A (en) | Cold end production line electrostatic precipitation system | |
| JP4105778B2 (en) | Airflow transfer device | |
| CN106492988A (en) | A kind of microchannel anode water fog removing device | |
| CN108906329A (en) | Electrode system and electrostatic dust-arrest device | |
| MY135936A (en) | Apparatus for removing particles | |
| CN205441838U (en) | A electrode for belt conveyor static presses down dirt | |
| TWM499960U (en) | Automation vehicles washer | |
| CN102332420A (en) | Ultrathin umbrella-flow-type non-contact silicon wafer sucking disc | |
| CN103982060A (en) | Bus station with air purifying function | |
| CN204365650U (en) | Dust removal machine | |
| CN106770539B (en) | The manufacturing method of gas sensor based on carbon nano tube growth technology | |
| CN101933120B (en) | Atmosphere cleaning device | |
| KR20150112829A (en) | Electric precipitator and method for manufacturing the same | |
| CN108471515A (en) | A kind of indoor intelligent monitoring device with warning function | |
| CN106622667B (en) | A kind of intelligent electrostatic induction absorption dust arrester | |
| CN206392251U (en) | A kind of microchannel anode water fog removing device | |
| CN103785490B (en) | Online plasma cleaning method | |
| CN203711152U (en) | Converter gas electrostatic precipitator | |
| CN101462109A (en) | Electrostatic precipitation system of vibrating screen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 M5 building, No. 1 Jiuxianqiao East Road, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |