CN101504468B - production method of single-slice integrated micro-lens - Google Patents
production method of single-slice integrated micro-lens Download PDFInfo
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- CN101504468B CN101504468B CN 200910073947 CN200910073947A CN101504468B CN 101504468 B CN101504468 B CN 101504468B CN 200910073947 CN200910073947 CN 200910073947 CN 200910073947 A CN200910073947 A CN 200910073947A CN 101504468 B CN101504468 B CN 101504468B
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- photoresist
- lens
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- integrated micro
- pit
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000000873 masking effect Effects 0.000 claims abstract description 11
- 238000010992 reflux Methods 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000004891 communication Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 102000001999 Transcription Factor Pit-1 Human genes 0.000 description 1
- 108010040742 Transcription Factor Pit-1 Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001935 peptisation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- Drying Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a single-element integrated microlens, which comprises a substrate and a microlens, and is characterized in that the microlens is positioned in a concave pit of the substrate and the method for manufacturing the microlens comprises the following steps: 1) forming the concave pit on one side of the substrate; 2) filling the concave pit with reflux photosensitive resist and then coating top layer masking photosensitive resist; 3) forming the photosensitive resist in the concave pit into a frustum shaped photosensitive resist column; 4) removing the top layer masking photosensitive resist; and 5) molting the photosensitive resist column by using a reflux process to form the microlens. Compared with the prior integrated microlens, the single-element integrated microlens has the characteristics of good lens shape, high entrenchment, batch production, and the like, and can be widely applied to light emitting tubes, lasers, photodetectors and other optical communication elements.
Description
Technical field
The present invention relates to a kind of method for making of single-slice integrated micro-lens, belong to the semiconductor fine processing technique field.
Background technology
Develop rapidly along with Fibre Optical Communication Technology, not only high speed, high performance photoelectric device demand are strengthened day by day, and system performances such as high coupling efficiency, little tolerance are also had higher requirement, and at exiting surface and incidence surfaces making micro lens such as light receiving element such as PIN photo-detector, MSM photo-detector such as luminescent device such as light emitting diode, laser diodes, the coupling efficiency of raising light that can be by a relatively large margin and improve the coupling tolerance is a kind of very effective means.
At present, optical semiconductor mainly is divided into two classes with lens: a class is outer joining, and it is integrated to be commonly called as mixing; An other class is at the exiting surface of optical device or advances light face monolithic integral lens.Along with the develop rapidly of optical communication technology, the latter will be a trend of following high-speed light communication device development.Current, single-slice integrated micro-lens mainly divides two classes, and one is intended forming lens by dry plasma etch technology or the rapid wet etching technology of multistep for adopting the semi-conducting material manufacturing micro lens; Its two, utilize photoresist to make the material of micro lens, by the reflux technology, photoresist shunk and form circular-arc micro lens.
More than the job operation of two class micro lens, have separately advantage with not enough, though the former material refractive index is big, spotlight effect is good, processing consideration harshness, the bad control of the pattern of lens; The latter process processes simply, and the lens pattern is good, but because can be too not thick at chip surface or back side coating photoresist, the lens radian that causes reflux to form is not enough, and is not obvious to improving the optically-coupled performance, and lens protrusion plane, and reliability has much room for improvement.
Summary of the invention
The technical issues that need to address of the present invention provide the method for making of the single-slice integrated micro-lens that a kind of processing technology is simple, spotlight effect good, reliability is high.
For addressing the above problem, the technical solution used in the present invention is:
A kind of single-slice integrated micro-lens comprises substrate and micro lens, it is characterized in that, described micro lens is located in the pit of substrate.
Its method for making comprises following operation:
1) one side at substrate forms a pit;
2) fill pit with the backflow photoresist, apply top layer masking then with photoresist;
3) photoresist on the pit is formed a round table-like photoresist post;
4) remove top layer masking with photoresist;
5) use reflux technique fusing photoresist post, form micro lens.
Described substrate comprises Semiconductor substrate or ferroelectric material.
Described Semiconductor substrate comprises InP or GaAs or Si.
Described pit is used wet etching or the plasma dry etching is made.
Described round table-like photoresist post is used photoetching process and is swept adhesive process and is made.
The described photoresist that is used for top layer masking is used with the photoresist that is used to reflux, and the two realizes double-layer gum process jointly.
Adopt the beneficial effect of above-mentioned single-slice integrated micro-lens and preparation method thereof to be: to act on the photoresist backflow and made the lens complete shape and appearance that micro lens had, the advantage of high conformity, owing to combine pit, it is controlled to have more lens arc height, to the pinching better effects if of light simultaneously; The micro lens of making is positioned at pit fully, can effectively avoid various fragmentations, has improved the integrality and the reliability of lens; Technology is simple relatively, and consistance and yield rate are easy to produce in batches than higher.The method for making of single-slice integrated micro-lens of the present invention can be widely used in the various active and passive device in the optical communication field.
Description of drawings
Fig. 1～Fig. 5 is to be example with the InP substrate, the schematic cross-section of single-slice integrated micro-lens manufacture craft.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
As shown in Figure 1, on InP substrate 1,3 shelter with photoresist, utilize wet corrosion technique to corrode a pit 2.
The area of described pit and the degree of depth are adjusted according to the characteristic of micro lens.
Described wet corrosion technique adopts isotropic HBr, H
2O
2And H
2O mixed solution, its volume ratio are 1: 1: 9, at room temperature (25 ℃), and corrosion rate is about 2 μ m/min.
But described pit also using plasma dry etch process is made.Use the ICP etching apparatus, adjust reacting gas Cl
2/ CH
4/ H
2Throughput ratio be 7sccm: 8sccm: 5.5sccm, the radio frequency incident power is 200W, air pressure is 4～5mTorr in the reaction cavity, makes a circular or foursquare pit.By adjusting reacting gas Cl
2/ CH
4/ H
2Ratio and the conditions such as air pressure in radio frequency incident power and the reaction cavity, can realize the corrosion pit purpose, its corrosion rate and erosion profile are all controlled.
As shown in Figure 2, on Fig. 1 basis, fill pits 1, apply top layer masking with photoresist 3 then with backflow photoresist 4.The photoresist 4 of described backflow is the PMGI photoresist of MICROCHEM company, and the described photoresist of sheltering is the SPA660 photoresist.
The photoresist that is used to reflux have the acetone of being insoluble to, refractive index big, be easy to the drawdown deformation characteristic; And being used for the photoresist of top layer masking and the photoresist of backflow is used, the two realizes double-layer gum process jointly.
As shown in Figure 3, on Fig. 2 basis, use photoetching process and sweep adhesive process, the photoresist on the pit 14 and 3 is formed a round table-like photoresist post 5 and a fringe region 6, all the other regional photoresists all remove then.
As described in Figure 4, utilize the backflow photoresist to be insoluble to acetone, and shelter the characteristic of peptization, remove top layer masking photoresist 3 in acetone.
Substrate is placed on the hot plate, and the control hot plate temperature is 250 ℃, carries out photoresist and refluxes, and backflow 10min can form micro lens 7, as shown in Figure 5.
Substrate can also adopt other multiple semiconductor materials such as GaAs or Si, and substrate also can adopt ferroelectric material etc.According to different substrates, the technical parameter difference of wet etching or plasma dry etching.
Claims (6)
1. the method for making of a single-slice integrated micro-lens is characterized in that, comprises following operation:
1) one side at substrate forms a pit;
2) fill pit with the backflow photoresist, apply top layer masking then with photoresist;
3) photoresist on the pit is formed a round table-like photoresist post;
4) remove top layer masking with photoresist;
5) use reflux technique fusing photoresist post, form micro lens.
2. according to the method for making of the described single-slice integrated micro-lens of claim 1, it is characterized in that described substrate comprises Semiconductor substrate or ferroelectric material.
3. according to the method for making of the described single-slice integrated micro-lens of claim 2, it is characterized in that described Semiconductor substrate is InP or GaAs or Si.
4. according to the method for making of the described single-slice integrated micro-lens of claim 1, it is characterized in that described pit is used wet etching or the plasma dry etching is made.
5. according to the method for making of the described single-slice integrated micro-lens of claim 1, it is characterized in that described round table-like photoresist post application photoetching process and sweep adhesive process being made.
6. according to the method for making of the described single-slice integrated micro-lens of claim 1, it is characterized in that described photoresist and the backflow photoresist that is used for top layer masking is used, the two realizes double-layer gum process jointly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910073947 CN101504468B (en) | 2009-03-19 | 2009-03-19 | production method of single-slice integrated micro-lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910073947 CN101504468B (en) | 2009-03-19 | 2009-03-19 | production method of single-slice integrated micro-lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101504468A CN101504468A (en) | 2009-08-12 |
| CN101504468B true CN101504468B (en) | 2011-02-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910073947 Expired - Fee Related CN101504468B (en) | 2009-03-19 | 2009-03-19 | production method of single-slice integrated micro-lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101504468B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102200592A (en) * | 2010-03-25 | 2011-09-28 | 宏远有限公司 | Manufacturing method and structure of optical lens module |
| JP6850212B2 (en) * | 2017-07-04 | 2021-03-31 | 日本電信電話株式会社 | Manufacturing method of light receiving element |
| CN110082845B (en) * | 2019-04-18 | 2021-03-09 | 中国科学技术大学 | Method for preparing micro lens |
| CN112394428B (en) * | 2020-11-16 | 2022-08-09 | 京东方科技集团股份有限公司 | Micro-lens structure, manufacturing method thereof and display device |
-
2009
- 2009-03-19 CN CN 200910073947 patent/CN101504468B/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN101504468A (en) | 2009-08-12 |
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Application publication date: 20090812 Assignee: TONGHUI ELECTRONICS Co.,Ltd. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract record no.: 2013130000087 Denomination of invention: production method of single-slice integrated micro-lens Granted publication date: 20110202 License type: Exclusive License Record date: 20130916 |
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Assignee: TONGHUI ELECTRONICS Co.,Ltd. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract record no.: 2013130000087 Date of cancellation: 20170706 |
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Granted publication date: 20110202 |