CN101501979A - Micro concentrators elastically coupled with spherical photovoltaic cells - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
With small dimensional optics, small photovoltaic cells have heat distribution surfaces, very high concentrations and subsequently high utilization of the semiconductors can be achieved. Discrete photodiodes can be formed as spherical and other geometric shaped, cells with high performance characteristics, precision dimensions, and low cost. This invention positions discrete photovoltaic cells by using their geometric shape, elastic electrical mounts, couples them to small optical concentrator systems of refractory and or reflective optics and makes electrical network connections to those photodiodes, reliably, adjusting for thermal expansion, and at low cost to form low cost and reliable electrical power arrays. The electrical connectors and network can form part of the reflective optics and heat removal system. The electrical interconnection system can also form a reliable network that is self-correcting and tolerant of point failures.
Description
Summary of the invention
At sunny fine day, the sun approximately shines 1000 watts energy at every square metre of planetary surface.Solar energy converting is that electric energy may be the desirable energy solution to the energy demand that increases day by day on the earth.The major limitation of solar energy is the system cost height.At present, best photovoltaic cell system has realized about watt, yet, for competing, must make cost reduce by 4 times with traditional energy, promptly cost is a watt.
Almost the complete cost of solar array all is owing to use a large amount of expensive semiconductors in current solar battery apparatus.Present solar cell technology makes array costliness, efficient low, also unreliable sometimes.Innovation of the present invention is that large-scale production has the method for the array of resilient contact, and it also concentrates light to utilize expensive semiconductor better, do not have simultaneously overheated, do not lower efficiency, can realize effective heat eliminating with little discrete photovoltaic cell.Therefore, can reduce the semiconductor cost element of system.If per unit area concentrates the cost of optics far below semi-conductive cost, then the cost of the total cost of the per unit area of photovoltaic cell, generation electric energy is minimized.The inventor estimates, because the cost of miniature smooth central system is compared present photovoltaic cell far below semi-conductive cost, can realize that material cost reduces by four times to hundred times.
The level of practice that produces the photovoltaic array of thousands of discrete light electric diodes has caused at temperature range electricity and be thermally connected to the difficult problem of thousands of discrete semiconductors reliably and effectively.The inventor finds, attempts to produce the length that is installed on the plastic gasket by stress and cracking and goes here and there the silicone photodiode owing to different assembling thermal expansion in the assembly is failed.In this patent, elasticity electricity and thermo-contact part be used for semiconductor remain on correct position, make the system that assembles can be crooked, and the wide range of temperature of experience but in the temperature coefficient scope, can not occur between the different materials contacting separately or situation that machinery decomposes.The geometry that regularly changes the direction of electric contact piece on the substrate and circuit also can be used for avoiding since the different heat expansion of system or deflection and in electric contact piece accumulation produce stress, thereby keep electric contact piece to be in elastic stage.Electric contact piece can be welded together still keep simultaneously elastic compression on scolder or pad to prevent electric contact piece because thermal expansion and mechanical oscillation and in pad, produce stress.Resilient contact makes that tolerance can be bigger when making up each part when assembly array.
Miniaturely concentrate, effectively and the heat radiation notion from simple observation, promptly less optics such as the raindrop on the leaf can concentrate on hundreds of times sunlight in the point and leaf is burnt.By concentrating sunlight, solar cell can be more effective and be more saved into local runtime, uses expensive semi-conducting material that they are transformed to actual photovoltaic array, and it can be fabricated to a plurality of discrete batteries, electrical connection and cooperate (United States Patent (USP) 5 with miniature concentrated speculum and lens, 482,568).The inventor has set up several concentrator system testing aforementioned concepts.Than the photovoltaic cell of not concentrating optics, use the 2cm diameter cylindrical glass rod, thin slice aluminium retroeflector, and the energy output of the sun concentrator system of 2mm broad crystallisation photovoltaic cell increase by 7 times.In photovoltaic cell, there is negligible harmful temperature to rise owing to light is concentrated.In another experiment, the inventor observes, and the focus point of micro objective 18 microns on the silicone photovoltaic cell realizes that the light of 34000sun concentrates, and temperature 2 degree that only raise.Because concentrating on the performance of the interior photovoltaic cell of single point on the photovoltaic cell, higher light only reduces by 3%.Therefore, use undersized optics, little photovoltaic cell and heat distribution surface, can realize the very high semi-conductive height utilization of concentrating and then realize.Thereby the present invention is devoted to form the light concentrator of a myriad of and the level of practice that each battery forms actual energy system reliably with low cost.The same with previous United States Patent (USP) 5,482,568, electric connector can form the part of reflective optical device.This electric interconnection system also can form reliable network, and it allows that partial points lost efficacy.
Description of drawings
Fig. 1 is the groove in the dielectric substance
The 1-dielectric substance
The 2-groove
The 3-planar side
The circular side of 4-
Fig. 2 is the sectional view in shaping contact groove or hole
Electronic conductor on the 10-outer surface
The 11-dielectric substrate
The first electronic conductor coating on the 12-planar side
The 13-groove
Second electronic conductor on the circular side of 14-groove
Electronic conductor on the outer flat part of 15-material
The bottom of 16-shaped hole
17-elastic substrate film
Fig. 3 is the shaping contact groove of the spherical photodiode of maintenance or the sectional view in hole
20-first external electrical conductors
The 21-dielectric substrate
First electric conductor in the 22-groove
Contact on the interior doped region of 23-ball
The outer doped layer of 24-
The doping inside of 25-ball
Electric contact piece on the outer doped region on the 26-ball
Electric contact piece on the excurvation tune of 27-groove
Electric contact piece on the 28-dielectric substrate outer surface
The antireflecting coating of 29-spherical semiconductor
30-groove adhesive or silicone coating bottom
31-groove or hole
The planar side of 32-bead
The planar side of 33-groove
Fig. 4 is for keeping the hemisphere shaped hole with planar side of spherical photodiode
The 35-conductor coatings
Conductor coatings in the smooth place in 36-hole
Hole in the 37-dielectric substrate
38-electricity breaking part
Electric conductor on the 39-outer surface
Electric connecting conductor on the spherical side in 40-hole
Fig. 5 is the example of glass molded lens/mirror optics device system
49-transparent dielectric sealant
50-transparent lens/mirror optics device 2D or 3D
Electric conductor on the 51-reflector position
The 52-semiconductor
Second contact on the 53-semiconductor
54-electric conductor and outer series connection array contact
The electric conductor of 55-opposite side electric contact piece top
56-protectiveness backboard
The 57-dielectric sealant
58-antireflecting coating and glass protecting agent
The 59-dielectric sealant
Fig. 6 is that the retroeflector battery of array connects
The 60-refractive material
The last lens of 61-
Speculum under the 62-
63-photodiode cup
The 64-external electrical conductors
The 65-semiconductor
The 66-dielectric substrate
67-backboard or coating can be reflector or scatterer
The 68-back side applies reflector or scatterer
The 69-grooving
85-silicone rubber sealant
Fig. 7 is a spherical optics
The last lens of 70-cross section
The cross section of 71-electric conductor and speculum
72-transparent material cross section
The electric contact piece that 73-contacts with semiconductor spheres
The 74-semiconductor spheres
The circular side electric contact piece that 75-contacts with ball
The cross section of several electric contact pieces that 76-contacts with ball
77-electric contact piece coating
78-has the semiconductor spheres of PN junction and electric contact piece
79-electricity breaking part
80-second electric contact piece
Hexagon between the 81-battery is separated.The also square packing of this battery.
The electric wiring of Fig. 8 in ball is combined in membrane array the time
The molded dielectric substrate of 90-
The 91-conductive film
Electric contact piece on the 92-planar side and interior material
Doped semiconductor in the 93-
The outer doped layer of 94-
Contact on the outer doping surfaces of 95-
The circular side contacts part of 96-
97-contact electrode
The semiconductor of the upset that 98-will be not cooperate with sharp keen square side on the hole
99-outer surface doped layer
Doped layer in the 100-
101-planar side electric contact piece
102-planar side contact
It also can be scintillator that 103-has the dielectric molded hemisphere of smooth side opening
The circular side electric contact piece of 104-
105-static conducting membranes
The retroeflector or the scatterer of the blackening of 106-outer surface
The outer surface of 107-blackening
Molded groove of 108-or hole
Fig. 9 is the folded sheet that is clipped between lens/speculum
110-shaping transparent lens and speculum
111-is electrically connected small pieces
The 112-conductive coating
The 113-dielectric substrate
114-back metal plate
The 115-semiconductor spheres
The output of 116-electricity connects
117-antireflecting coating or TiO
2And/or anti-scratch or wear-resistant or other best centralized solution or UV filters
118-electronic circuit or battery
The hot phase-transition material of 119-
120-insulating vessel or box
121-fan electromotor or actuator
The 122-air-flow
123-fan or valve
124-heat pipe or heat circulating system
The back of the body surface of 125-blackening
126-optical coupling and encapsulant
Figure 10 A is lens and back to concentrated planar system
The 109-air gap
127-dielectric liner bottom
The 128-elastic layer
129-becomes low-angle light with lens surface
The 130-lens
131-light
The 132-photodiode
133-photodiode substrate surface and electrode
134-electricity breaking part
Figure 10 B is a Fresnel lens and back to concentrated planar system
125-second electrode and reflective optical system
136-light
The 137-Fresnel lens
The 138-photodiode
The 139-dielectric substrate
140-first electric contact piece and reflector
Figure 10 C is that single parabola and front surface are concentrated planar system
141-transparent dielectric window
The 142-photodiode
143-light
The 144-electric contact piece
The 145-paraboloidal reflector
162-air or transparent medium
The 164-transparency electrode
Figure 10 D is a Cassigranian optics and back to concentrated surface plane system
The 146-transparent window
147-second reflector
148-light
149-first reflector
The 150-photodiode
The 151-electric conductor
The 152-dielectric substrate
153-air or transparent medium
Figure 10 E is that graded index concentrates lens (grin lens) and back to central system
The 155-high refractive index layer
The 156-second maximum refractive index layer
157-the 3rd maximum refractive index layer
158-light
The 159-electric conductor
The 160-photodiode
The 161-lowest refractive index
Figure 10 F is red-the green and inclination optics device system of spectrum expansion
Attention: should be understood that and may be illustrated be in this inclination optics scheme, also to use the expansion of grating and holographic spectrum.
165-light
166-has the refractive material of high chromatic aberration (or interference grating)
167-electric contact piece and reflector
168-green glow photodiode
The 169-blue photodiode
170-ruddiness photodiode
171-ruddiness light
172-green glow light
173-blue light light
The chromatic aberration that Figure 11 and hemisphere layering photodiode heap are got in touch
The 174-antireflecting coating
175-light
The 176-lens
177-blue light light
178-ruddiness light
179-ruddiness focus
Blue light spot or zone on the 180-blue photodiode layer
181-ruddiness photodiode layer
182-center electric contact piece
The outer contact of 183-
184-green glow absorbed layer
199-green glow photon
Figure 12 A is the spherical photodiode heap of both sides ground connection layering
270-outer rim contact
The outer photodiode layer of 271-
Photodiode layer in the middle of the 272-
273-center electric contact piece
274-center photodiode layer
275-center electric contact piece
Figure 12 B be used for both sides electrolytic grounding cell or monolateral electrolytic grounding cell while arriving and EDGE CONTACT folder
The 280-electric contact piece
281-edge electric contact piece
The outer photodiode layer of 282-
Photodiode layer in the middle of the 283-
284-center light electric diode
285-center electric contact piece
286-center electric contact piece
The 287-electric contact piece
The 288-dielectric substrate
289-back side electric contact piece
Photodiode layer in the middle of the 290-
The outer photodiode layer of 291-
292-outer rim electric contact piece
293-molded glass cover lens or speculum
294-elasticity transparent interface material
Groove in the 295-dielectric substance or cavity
The asymmetric hemisphere of Figure 13 A on low coefficient of friction surfaces, aiming at
The 185-sound source
The 186-sound wave
The 187-Teflon surface
188-shaping semiconductor bead
The planar side of 189-bead
190-back side ammeter face
The 191-high voltage source
192-electrical ground
The last earthed surface of 193-pushing plate or grid
Figure 13 B is the pusher on the low coefficient of friction surfaces and the hemisphere of aligning
The 200-pushing plate
The ball of aiming on the 201-plate
Grooving on the 202-pushing plate
Hemisphere recess on the 203-pushing plate
204-Teflon surface one dielectric
The 205-metallic plate
Figure 13 C injects the pusher that electrically contacts folder for the hemisphere that will aim at
210-dielectric substrate folder
211-electric contact piece and speculum
212-shaping cavity
213-asymmetrical beam electric diode bead
The 214-electric contact piece
215-is at the silicone rubber contact surface liner at place, shaping pusher bottom
The 216-pushing plate
The 217-Teflon film
The 218-backboard
Second electrode on 219-dielectric shaping substrate and the speculum
Second contact on the 220-bead planar side
The planar side of 221-bead
Shaping cavity on the 222-pushing plate
Figure 14 contacts with photodiode central flat place's point in the molded lens speculum folder circuit and the sectional view of contacts side surfaces
230-exterior clear antireflection and protective coating
231-flame proof electrical dielectric material lens-speculum
232-dielectric light-transmissive adhesive or optical coupling material
The 233-semiconductor photo diode
234-light-transmissive adhesive or optical coupling material
235-has the dielectric coating of low-friction coefficient
236-has the dielectric coating of low-friction coefficient
237-EDGE CONTACT electrode
238-EDGE CONTACT electrode
239-back side dielectric substrate and electric contact piece separator
240-center conductive center contact
241-back side dielectric substrate
The 242-electric contact piece reaches the circuit of photodiode center contact
243-is through the electrical connection of the EDGE CONTACT part of photodiode center contact and adjacent photodiode
Figure 15 is the schematic diagram of the equivalent electric circuit of photovoltaic array
250-exports connection, the positive polarity during operation
The 251-bus is electrically connected
The 252-photodiode
Filament on 253-dielectric thermistor or the piezo-resistance or metallic film
The 254-reverse current detects diode
The 255-bus is electrically connected
The electrical connection of negative polarity during the 256-operation
The 257-bypass diode
Thin-film electro conductor on 258-dielectric or the piezo-resistance
Embodiment
Accompanying drawing is described
Illustrate in several exemplary embodiments of the present invention framework below.In these accompanying drawings, several combination and variation and structure will be shown.In Fig. 1, cutting groove in dielectric substance, perhaps groove is molded by the material as soda-lime glass.Glass guide channel a side form flat 3 and opposite side form sweep 4 with the slot curvature coupling of semicircle ball of the side shown in Fig. 3.Groove 2 can have small gradient and cooperate to adapt to semi-conductive little installation deviation and to make semiconductor spheres and groove 2 present tight wedge on planar side 3.The example of other dielectric substance is:
Nomex plastics: (Asahi-Kasei Chemicals Corporation Co.Ltd.Aramica Division, 1-3-1 Yakoh, Kawaski-Ku, Kawasaki City, Kanagwa210-0863 Japan)
Polyimide plastic: DuPont Films, HPF Customer Services, Wilmington, DE 19880
Silicone rubber:
184 Silicone Optical coupling adhesive DowCorning, Dow Corning Corporation, Auburn Plant, 5,300 11 Mile Road, Auburn MI 48611 USA
EVA
(ethene-vinyl acetate): DuPont Corporation, Wilmington, DE 19880
In Fig. 2, show the sectional view of dielectric 11, groove 13 cuts or molded forming in described dielectric.This Fig. 2 also can be used as the example that keeps the cross section of single semiconductor bead by circular hemispherical-shaped aperture.In this Fig. 2, elastic substrate film 17 as silicone rubber (
184 silicone optical coupling adhesive) be deposited in the groove 13 in the dielectric glass backing material 11 and be caught to solidify.The alloy of conductive film 10,12,14,15 as gold, platinum, palladium, silver, tin, aluminium, antimony, lead, copper, zinc, titanium, molybdenum, tantalum, tungsten, nickel, carbon, silicon, iron, chromium, vanadium, niobium, pick, indium and these materials or conductive compound such as tin oxide, zinc oxide or boron-doped diamond vacuum evaporation are on elastic film 17.Conductive film 12,14 parts are deposited in the groove 13.When the semiconductor bead firmly was in the appropriate location, the contact point 12,14 of conductive film and the little ball contact of semiconductor will be near the top of groove edge.Electrically contacting film 12,14 is not deposited on the bottom 16 of dielectric substrate, groove.This gap 16 in the conductive film 12,14 forms electric breaking part when semiconductor is installed.The smooth electrode surface 12 in hole 13 is installed with the corresponding smooth kinematics that will form the semiconductor bead that contacts with meander electrode of photodiode with meander electrode surface 14, as shown in Figure 3.
In Fig. 3, show the sectional view that spherical semiconductor bead 25,24,29,26 is put into the groove 31 of dielectric 21.Photodiode bead 32 as
(trade mark is the silicone photodiode
, Kyosemi Corporation 949-2 Ebisu-cho, Fushimi-kuKyoto-shi 612-8201 Japan) planar side aim at the planar side in groove 33 or hole.When described bead by correctly on time, it should slip in groove 31 or the hole 31 and can almost completely fill up 31 ground, described hole and cooperate.Unpunctual with respect to hole or 31 pairs of grooves when the spheroidal globule with planar side, bead should can not slip in hole or the groove 31 all the time.Thereby this avoid being connected the opposite polarity of battery with the similar feature of key and make may use acoustical vibration bead or vibration substrate 21 with bead 25,24,29,23,26 " shaking " to suitable direction and aim at and to make the semiconductor bead put into groove, preferably electric contact piece 23,26 contacts with the membrane contactor 32,27 in groove or hole 31.By in the hole or the bottom of groove 31 place have skim viscosity, static or energy-absorbing surface 32, bead will stay in hole or the groove 31 and with trench bottom and contact when bead correctly cooperates with groove.Groove can be the part of bigger frame with the sheet panel, open being prized with described frame with the sheet panel during bead cooperates, and when bead all was in the appropriate location and clogs in the groove, bigger frame with the sheet panel can be released, thereby produced clamping force and electrically contact on bead.
Be in operation, thereby the semiconductor bead 24,25 that light penetrates in P/N knot doped layer 24,25 zones produces electron-hole pair (the P doped region 25 of the inside and the N doped semiconductor 24 of outside).The separation of duplet produces negative polarity producing on the flat 33 of bead on positive polarity, the outer contacting part 26 at bead.Can carry out providing to the P/N knot inverse process of voltage and current, photodiode can produce has the compound light of electron hole pair.P material 25 and electric contact piece 23 or electrode 22 can form a knot of thermocouple.N material 24, electric contact piece 26 and electrode 27 can form another knot of thermocouple.If semiconductor junction 25,24 is by light or infrared radiation heating, contact is designed to have enough thermal endurances so that the temperature of semiconductor junction 25,24 raises and has temperature gradient from semiconductor 25,24 electrode contact points 26,23 and electrode 20,28 than electrode fin 20,28, and Seebeck (Seebeck) effect will be striden battery and be produced voltage.These batteries can be connected in series as photovoltaic cell and produce electric energy.If by these batteries, for Seebeck effect, knot 24,25 will be eliminated heat also by Peltier (pal card) effect heating semiconductor junction 24,25 from electrode 20,28 to electric current with opposite direction.Electric contact piece 26 and 23 can be formed to have lower thermal conductivity and contacts and the dielectric tunnel layer as they are formed.Thereby other the possible electric contact piece with low heat transfer is a part with dielectric to be formed contact 26 and has very close electrode and enable to occur the vacuum gap tunnelling so that electronics is moved on to electrode 27 from N layer 24.Keep contact size these parts from the sublayer 19,34 of substrate 21 and two electrodes 20,28 to the elastic compression on the semiconductor bead contact 23,26, simultaneity factor can experience temperature range, and the coefficient of expansion between electrode 20,28, substrate 21 and the semiconductor 24,25 can be very different.Afterwards, the semiconductor bead is combined in a part that becomes bigger array in groove or the hole 31, and these batteries are coupled to optics and are electrically connected 28,20 in the series connection of photovoltaic array, light-emitting diode, thermoelectric occasionally Peltier refrigerator or thermionic converter and parallel circuits.In the bottom of groove 31, adhesive 30 is used for battery is fastened in the groove.Adhesive 30 as
Also as the optical coupling material between backing material 21 and the semiconductor bead 32, this is desirable when sunlight enters semiconductor bead 32 by substrate 21 to 184 light-permeables.Adhesive 30 also can be used as antireflecting coating together with the antireflecting coating 29 (antireflection fluorocarbon coating, MihamaCorporation, 1-2-8 Toranomon, Minato-ku, Tokyo 105-8437 Japan) of bead outside.Should also be mentioned that semiconductor rods 25 also can be used in this groove geometry.
In Fig. 4, show with the hole 37 of bead form fit and be electrically connected 36 example.Described hole has flat site, and electrically contact film 35 and be deposited on the flat site, dielectric 38 (electric areas of disconnection 38) crested, second electric contact piece 39 is illustrated as applying the circular side 40 in hole 37.
When the asymmetrical semiconductor bead shown in Fig. 3 sectional view is placed in the hole 37,, then only enable to slip into described hole if the flat surfaces of bead 36 is parallel with ball.
In Fig. 5, show the sectional view that semiconductor spheres array 52 usefulness electric contact pieces 54,51,53,55 are connected to transparent optical lens/speculum 50.Photodiode array forms by coated molded glass workpiece 50, and described glass workpiece has the curved lens exterior domain, on the front surface 58 antireflecting coating is arranged.The dorsal part of glass 50 is configured as concentrated speculum.Mirror coating and conductive film 51,53,55 are coated on the backside surface of glass 50.The dorsal part of glass or transparent material EVA50 has and is used for the semiconductor pellet shapes and is formed in wherein groove 49, and this groove is shaped so that described groove flexibly keeps described bead when in the shaping semiconductor bead wedging groove.About 5 taperings of spending gradients at the metal-metal contact point place of described bead and cell wall cell wall will guarantee that described bead can not skid off described groove, because frictional force is far above the power that skids off wedge structure.Electric breaking part is not formed between electrode on the bottom of the groove 49 in the coated glass 50 thereby mirror coating and electrode 54,51,53,55 usefulness angles control that vacuum evaporation, ink jet printing or angle control plasma jet deposit to apply the mirror reflects zone.These uncoated zone 49 printing opacities.The film that is suitable for mirrored reflector electrode 54,51,53,55 is oxidized to tin oxide to become transparent by forming with the tin coated glass after the described tin.Semiconductor spheres 52 is inserted into and wedges in the groove of glass.The shaping back shroud is placed on the top of photodiode array and is glued to glass optics and diode array with the silicone rubber sealant.The storing of backboard, reflector and fin 56 applies elastic pressure by the thin dielectric film 59 of backboard 56 on semiconductor spheres.Dielectric substance 59 can be silicone rubber or polyimides, also can be backboard is connected to electrode 54,51,53,55, partly leads the adhesive of bead 52 and glass 50.The groove 49 that adhesive also can penetrate between semiconductor 52 and the glass 50 is interior also as the refractive index transition material between glass and the semiconductor 49.Sealant is also placed in periphery or array and sentences sealing semiconductor and avoid dust and dirt.The aluminium backboard can have towards the bright polished surface of solar cell or white scattering surface.The outer surface of backboard can have coating such as the black silicone paint keeps back side cooling to help back side radiation area.The silicone rubber sealant also can be used for the dorsal part of sealed cell and guarantee battery and the back side between good thermo-contact.Between electrode 54,51,53,55 and the semiconductor bead 52 electrically contact can by in vacuum furnace or the photoflash lamp irradiation heating component with electrical bias guarantee with the big electric current that produces all contacts of welding.Other possible contact fastening method is the ultrasonic energy pulse to contact, and it is directed to the interface contact by glass or silicon bead with heat.The welding lead at circuit 54,55 edges can be got in touch with ultrasonic pulse.
In Fig. 6, show Si semiconductor bead 65 is placed on another mounting structure of carrying on the back on the surface 66.In this design, back of the body surface 66 is glass plate, polyimides or roll compacting or rammed steel or the aluminium sheet 67 that is squeezed into, and it applies and form therein silicone bead location notch 69 with dielectric such as glass 66.Groove 69 has silver or tin conductive coating 64, applies the surface of vacuum evaporation on it, and groove 69 has by the gap of covering or groove shoulder shade forms.But reflecting material is as the dorsal part of external surface coating 67 coated substrate 66 of silver, tin or white scattering material, if dielectric is transparent or semitransparent, it will be as the reflection of light device through clearance for insulation 69.On outer surface 67, can add black radiation coating 68.In some cases, can omit black radiation coating 68 and reflectance coating 67, can be used for illuminating the space of array below by the light of battery 65.
In this design, the light central system is on the glass plate 60 that is squeezed into.It has upper lens 61, bottom reflection mirror array 62 and forms loose Si semiconductor photodiode 65 groove 63 on every side that is assemblied in.For forming complete array, glass plate 60 sticks with glue agent such as silicone rubber sealant 85 along periphery and may be attached to photodiode area between photodiode 65 and glass 60.If silicone rubber sealant 85 as
184 printing opacities, then it can spread all over the array storing to be used as the optical coupling interface.The electricity output of this array is exported through conductive film 64 and by array edges.
Fig. 7 is the light concentrating structure with three-dimensional optical device.In the figure, lens 70 and speculum 71 are packaged into hexagon pattern 81.Other possible pattern is a squares and triangles.Light concentrator 70 is by glass 72 molded forming.Upper surface 70 forms lens arra, and lower surface forms speculum 71 and fin.
Use the total internal reflection of glass-air interface 70.Conductive film such as tin oxide 71,76 are coated on the glass surface on the reflector space 77,80 and in the shaped hole 73,75.
Two electrodes 77,80 are being separated by the gap on the glass reflector 72 79 on the either side of glass reflector.
Thereby semiconductor spheres 74,78 is inserted shaped hole 73 at place, glass reflector end and is contacted with two electrodes 71,76.Clearance for insulation 79 can be by forming with directed conductive material source 77,80 coated glass reflectors at the molded passage in the side of glass reflector 72 then, and described electric conducting material will not filled the shadow region in gap 79.Clearance for insulation 79 can be by being coated in the glass 72 with directed source at the molded passage in the side of glass reflector then, and described directed source will not apply the shadow region in gap 79.Be in operation, reflex on the photodiode battery 74,78 from light scioptics 70 focusing of the sun and from speculum 71,76,75,77,79,80.The concentrated ability of lens 70 and speculum 71,76 is high more, and the accuracy that array need point to the sun increases.Concentrate for low, about 4 times, the glass 72 of about 1.5 refractive indexes fully refraction makes concentrator array concentrate effectively from the light of the sun from the light of non-perpendicular ray not need sun-tracing.The light that does not directly focus on photodiode 74 can reflect on reflecting surface 71,76 as the scattered light by cloud layer, and part arrives photodiode 74.Concentrated photovoltaic array can be fixed, installs, inclination is so that the output of noon and angle of latitude maximum.The low of these types concentrates the application of concentrator photovoltaic array to can be used for structure installation and the installation of non-solar tracking.Minitype reflector must be vertically not from the teeth outwards, and in some designs, speculum can be tilted in array and make power output and performance maximum when must be in the irrelevant predetermined angular of insolation angle at outer surface.
In Fig. 8, the layout of photovoltaic cell and miniature concentrator when showing the soft substrate that approaches when the battery insertion.In this arrangement, the substrate dielectric barrier film 90 with groove or hole 108 is by duplicating first type surface, solidifying and move apart first type surface then and form.Afterwards, dielectric duplicates thing 90 usefulness orientations or face coat 91,97,105 applies, and only applies the outer surface and the edge 96,102,104 in groove or hole 108.Under the situation in hole 108, the electricity gap can provide by the groove or the indented area 103 of substrate 90, and other possible technology is silk screen printing, ink jet printing, plasma jet coating, plating, metal coating 91,96,97,102,104,105 as the vacuum moulding machine of silver powder or glass putty, conductive film.These conductive coatings 91,96,97,102,104,105 can have particulate or solidify by the mode that their form the reliable conductor contact with semiconductor photo diode 92,93,94,95,101,100,99,98 among it.Multiple decorative pattern, dimpling, pedestal, fiber, groove, otch and elasticity multiform surface all can be molded in the replica surface contact 96,102,104 the elasticity electrical contact surface that contacts with contact on the particulate photodiode contact 92,95,101,98 to help to realize.Replica surface 91,96,97,102,104,105 also can comprise fiber and/or conductive fiber is placed in one.The other method that forms electric contact piece 91,96,97,102,104,105 is that conductive foil, silk, fiber, conductive mesh, conductive fiber matrix or powder bed are pressed in the dielectric substrate.Next constitution step is the dorsal part with silver, tin, titanium (back reflector 106) or the molded dielectric 90 of white scattering thin film coated.This can be the silicone paint that is added with titanium dioxide fine particles.Deposition protectiveness and thermal radiation film 107 as be added with the silicone paint of carbon black or titanium oxide microparticle on the outer surface of reflector 106 overleaf, its can launch infrared ray and with radiation mode from array dorsal part heat extraction.Photodiode ball 100,93 and conduction contact point 92,95,101,98 with doping 99,94 are placed in the groove or hole of described structure.By suitably forming dielectric substrate 90 and electric contact piece 102,104, the suitable electric contact piece that photodiode ball 100 will only unidirectionally flexibly be installed in groove or the hole 108 and only realize contacting with another photodiode 93 in the array.When photodiode array was connected, described array can place vacuum furnace also contact may be welded on the appropriate location with annealing contact 91,96,102,104,92,95,101,98.Be combined as bigger modular system for protection and with photodiode array, they can be subjected to CFC or apply and be laminated on the glass plate with the silicone rubber sealant, shown in Figure 10 A, 10B, 10C, 10D, 10E, 10F.Battery can be positioned and be clipped between the glass lens and speculum with ditch or groove, and the position of described groove is suitable for the photodiode ball is remained on the focus or the centrostigma place of reflection from lens mirror assembly, as shown in Figure 9.
In Fig. 9, a plurality of parts all can make up to form power system with miniature concentrator photovoltaic array.Heat extraction and deposit heat and can and provide the heat management of photovoltaic array with the management combination of the unnecessary heat of photovoltaic array.Miniature concentrator photovoltaic array mode with sectional view in Fig. 9 illustrates, and has part: the back of the body surface of antireflecting coating 117, molded glass lens 110, boundary layer 126, reflector 112, elasticity bottom and dielectric substrate 113, thermal conductive substrate 114, radiation coating 125 and photovoltaic array.Thereby can being caught coarse injustice, radiation coating 125 increases convective heat transfer to have fiber, fin, protuberance, ridge or nest.Described coating can have in high IR emissivities such as titanium dioxide and carbon black or the graphite particulate adding silicone rubber coating.What should mention is, molded glass 110 can have flat outer surface, and this can make it be easy to keep clean and not have dirt.When described array is assembled between the glass of battery and the reflection mirror array, they or the maximum operation temperature that is higher than array stick with glue agent as
Suppress in boundary layer and in this temperature-curable.Higher owing to adhesive 126 coefficients of expansion than reflection mirror array 112,113,114,125 and glass 110, adhesive will shrink and be under the tension force when working temperature.This tension force in this boundary layer will draw speculum 112, dielectric base 113, thermal conductive substrate 114 and keep in touch part and be pressed on the semiconductor bead 115.Array side is collected and passed to electric current from the contact that is connected in series 112 on the bead 115.Electricity output from photovoltaic array schematically is shown plus end 116 and negative terminal 111.Shell 120 can be placed on the back side of photovoltaic array 125.It maybe can be that circulating fluid 122 is as fluorocarbons, alcohol or water with the guiding convection current by photovoltaic array 125 that this shell 120 may simply be flue.Make air 122 that the exemplary configurations to the infection minimum of photovoltaic array 125 is to use fan 121,123 suctions by photovoltaic array 125, the air 122 after the heating is used for the structure heating.Fan or pump 121,123 can or be passed to structure with heat and move in case of necessity at cooling photovoltaic array 125.The ridge of photovoltaic array or uneven outside 125 are compared smooth photovoltaic array and are realized better 122 heat transmission coupling from the photovoltaic array to the working fluid.Thereby phase-change material 119 can be placed on the back side of array 125 or be placed in the fluid ventilating system 120 and have stable temperature in the system with heat absorption and with heat.DC electricity output 116,111 can be connected to power conversion system 118, and it is optimized the performance of photovoltaic array and electricity output is converted to desirable electricity output as 110 volts AC.Capacitor, reversible fuel cell and/or battery can be combined in the power conversion system 118 and preserve electric energy to be close to array 125.Hot-pipe system 120,124 can be combined in the back side of photovoltaic array 125 so that unnecessary heat is passed to structure effectively.Thereby heat pipe 120,124 can have for making heat pipe produce only heat extraction when array temperature is used to pass to structure of boiling point that boiling point that invariable high pressure sealing set by the impurity of hydraulic fluid 124 and elastic wall 120 sets heat pipe.
Figure 10 A, 10B, 10C, 10D, 10E, 10F and 10G show the multiple alternative smooth central system of the battery that can be connected to Elastic Contact.
In Figure 10 A, show lens arra 130, photodiode 132 accurately is arranged in the resilient contact 133.Air gap 109 between the lens arra is used for thermal insulation, and wherein this array can be used as glass window or skylight.Electrically contacting film can be transparent tin oxide.Contact breaking part 134 illustrates between battery, also shows elastomeric dielectric such as silicone rubber layer 128 and transparent dielectric substrate 127 as flat molded glass plate.In this structure, light 131 scioptics arrays 130 focus on the semiconductor 132, and not from mirror electrodes 133 reflections.This system does not catch the light of the focus at no show photodiode 132 places.Therefore, if electric contact piece 133 is reflection or transparent contact, other lens surface 130 will reflect with the surface to become the diffused light of low angle 129 or make it pass through array.The transmittance optical texture can be used for room lighting such as skylight or window, directly sunlight is hunted down there, and becomes low-angle light 129 as the light at morning or night, from the scattered light no show photodiode 132 of the light of cloud layer scattering and atmosphere and import into indoor with the surface.In this example, semiconductor contact part 133 is shown on the flat substrate 127, but it can be a shaping substrate 127, and it helps to keep described semiconductor and use from shaped electrode 133 to be reflected in light on elastic layer 128 and the substrate 127 to collect the light of semiconductor 132.Possible supplementary features are to make elastic layer part 128 also will be converted to the peculiar emission light of phosphor or scintillator at the light of this layer absorption for phosphor or scintillator.The example of scintillator material is anthracene (anthacene), its solubilized and spill into (Pfaltz andBauer, 172E.Aurora St.Waterbury CT06708) in polymer or the rubber.The example of phosphor is zinc sulphide (ZnS), and it activates with copper or silver-colored dopant.Another example of phosphor is a yag crystal, and it is converted to gold-tinted with blue light.Described peculiar emission light is with all angular emission, but because the total internal reflection of elastic material board 128 reaches from electrode 127 reflection and backing material 127 internal reflections, and light is passed to photodiode, wherein elastic layer 128 changes angle and thickness.Use the advantage of scintillator to be its peculiar light that does not absorb himself and more low-energy photon than phosphor, thereby it can be used in hop 130,109 and the elastic layer 128 so that more low-energy photon focuses on by optics.Because internal reflection and low peculiar light absorption, flash layer can be effectively collected the light after the conversion and it is passed to photodiode 132 from the big zone of optics 130,109,128 or volume.Phosphor and scattering object estimate that will be used in non-transmission partly goes up as electrode 133, elastic layer 228 or substrate 127, and also can be used for unfocused light 129 is redirected to photodiode 132.
In Figure 10 B, Fresnel or holographic optical concentrator 137 are shown the light lumped elements.This is the example that dissimilar optics can be used for light is focused on a plurality of discrete light electric diodes.In this example, show the sectional view of Fresnel lens 137.Light 136 reflects and focuses on semiconductor 138 from the facet of Fresnel lens then by transparent lens material 137.Optical element 137 also can be a hololens, and it can focus on photodiode 138 with light by the ditch in diffraction grating such as transparent material 137 inner surfaces, rather than is refracted to photodiode 138 with the incidence angle of wide region.In this example, backing material 139 is to be used for the shaped resilient polyimide substrate of contact electrode 126,140 to keep silicon photoelectric diode 138.The same with the example among previous Figure 10 A, elastic substrate 139 can be scattering surface, scintillator or phosphor and transducer and the conduit that is focused the light of photodiode 138 as the first beginning and end.
In Figure 10 C, show the retroeflector on the front surface and the example of photodiode array.In this example, incident light 143 is by elastic substrate and electric conductor.Light 143 is from aluminium reflector 145 reflection and concentrate on the photodiode 142.Two transparent electric contact pieces of photodiode 142 usefulness 144,164 keep, as remain on tin oxide on the photodiode or thin opaque silver-colored electric conductor network with elastic substrate material such as fluorocarbon.Transparent material 162 can be placed between conductive electrode 144 and the speculum 145 as silicone rubber.Transparent elastic backing material 141 acts on directly into the lens of penetrating light for forming elastic clip and also use around semiconductor 142 as the fluorocarbon plastics forming.
In Figure 10 D, show Cassigranian light central system, photodiode 150 is on back of the body surface.In this structure, light is by clear glass cover plate 146, by air or transparent material cavity 153, from 147 reflections of shaping speculum, carry out reflecting second time, focusing on then photodiode 150 from the shaping speculum 147 that is installed on the glass cover plate.The Cassigranian optics has light and collects shortcoming, and promptly second reflector stops direct projection light to arrive semiconductor, but shield light electric diode 150 is to avoid high-energy radiation if desired, and this is useful.Second speculum 147 can make up with masking material.The electrical connection and this electrical connection that are formed into photodiode 150 by the shaping aluminium reflector contact 149 on the silicone rubber elasticity sublayer 151 are combined on the polyimide dielectric substrate 152.The contact pressure that elasticity sublayer 151 keeps photodiode 150 also is like this even whole system stands different expansions between part 152,151,149.Light transmissive material such as silicone rubber can be placed between front surface 146 and the reflector 149.
In Figure 10 E, show the light that uses gradient-index lens and concentrate optics.In this structure, optical material is an elastic substrate, as the silicone rubber that mixes and fluorocarbon polymer by layering and be configured as increase layer 155,156,157,161 refractive index to focus the light into photodiode 160.Light 158 reflects to focus on the photodiode 160 from the shaping layer 155,156,157,161 of silicone rubber.Contact electrode 159 flexibly is pressed on the photodiode.Last one deck of molded refractive material is to form compaction cavum 161 when photodiode is pressed into cavity.Cavity 161 is designed to have electrode to form the knot contact on photodiode 160.
In Figure 10 F, show and tilt or from the axle centralized solution.This makes array can be not orthogonal to light 165 from the sun because of possible architecture reason, and perhaps this tilts to utilize chromatic aberration incident light 165 surface geometries.The refractive index expansion of spectrum can be used so that the different wave length of spectrum is partly put into different photodiodes together with the refractory surfaces that tilts, and these photodiodes are this part optimization of spectrum of sunlight.Usually, light is angled to cause ruddiness 171 with the maximum angle refraction by refractory material, is green glow 172 then, is that blue light 169 reflects with minimum angle at last.Therefore, row's photodiode 170,168,169 can be arranged to the expansion of best intercepting spectrum: in the reflection groove 167 at first row's ruddiness photodiode 170, in second row's green glow photodiode 168, and the 3rd row's blue photodiode 169 and miniature concentrator glass 166 couplings outside with tilt geometry.Photodiode is put into and is adhesive in the shaped resilient cavity of elasticity transparent refractory with silicone rubber, as shown in Figure 3, electrically contacts film and forms and contact 167 with the compression of battery pile 170,168 and 169 both sides.
In Figure 11, show Heterolamellar photovoltaic diode hemisphere in the sectional view mode with 181,184,180 layers of different band gap.Also show the local cutout of spectrum expansion and condenser lens 176.The blue photons that absorbs high band gap photodiode layer 180 is the skin of hemisphere photodiode.The green glow that absorbs mid-gap photodiode layer 184 is following one deck of hemisphere.The ruddiness that absorbs minimum band gap photodiode layer 181 is the hemisphere core.Three-layer semiconductor 181,184,180 and spaced electrodes are illustrated as the example of the possible layering photodiode in the hemisphere geometry.More or less photodiode layer can be used and can form by repeatedly applying astrosphere 181.Each photodiode layer 181,184,180 will have doping impurity or electrode interbed, and it produces concentrating and voltage gradient of photovoltaic photodiode.In the outside of photodiode, the antireflection of adding hemisphere applies outer 174.This antireflecting coating 174 can be that The Gradient Refractive Index Materials maybe can be the thick transparent material coating of quarter-wave, and it passes through interference light reflection realization antireflection devastatingly.For being optimized to the transmittance of photodiode 181,184,180, antireflecting coating 174 can be adjusted to and make the transmission of place, photodiode hemisphere top ruddiness 178 maximum, optimizes the transmission of the more short wavelength 177,179 of light in the side of described ball then.Because sphere and light are in the incidence angle of described ball side, the quarter-wave antireflecting coating 174 of uniform thickness is displaced to longer wavelength with peak transmission.Therefore, for the light central system, when light direction was controlled on the photodiode ball, common best quarter-wave antireflecting coating 174 changed attenuation in the side of described ball with the compensation incidence angle.For this specific examples, when the spectral distribution of light is on the photodiode ball, quarter-wave antireflecting coating 174 in the side of described ball in addition attenuation much be incident on the green glow on the side and the transmittance of blue light 177 with optimization.The coating vacuum available evaporation source of such varied in thickness is realized, and is used the influence that is incident on the angle on the hemisphere to produce thinner coating.
Layering photodiode hemisphere 181,184,180,174 is placed on the back of focusing optics 176 near the focus of ruddiness 179.Incident white light 175 usefulness chromatic aberrations carry out the spectrum expansion, and wherein refractive index changes with light wavelength.Usually, compare green glow 199 by the ruddiness 178 of glass and blue light 177 has higher refractive index.Thereby hemisphere photodiode 181,184,180 is placed on and makes after the ruddiness focus 179 of lens 176 it optimize chromatic spectrum to make ruddiness focus 179 just in time be in the inside of the photodiode 181 of the outside of photodiode or center absorptive red light to the spatial distribution of layering photodiode.Then, green glow 199 will form bigger spot and more effectively be absorbed in the green glow absorption band of photodiode because the path by inclination photodiode layer 184 is longer.Blue light 177 spot diameters are maximum and will be absorbed in most effectively in the outer photodiode layer of optimizing into blue light absorption and conversion.Usually, more long wavelength's ruddiness 178 will be by glass 176 to be higher than the angle refraction of green glow 199 and blue light 177.Ruddiness 178 will absorb by these two photodiodes with low owing to being lower than blue photodiode 180 and the exciting band gap of green glow photodiode 184.The spectrum of light, space and Cheng Jiao are distributed in and will be tending towards optimizing the performance of each photodiode battery on the layering hemisphere photodiode 181,184,180 and needn't physically separate the photodiode battery.The part of green glow 199 and ruddiness 178 will be mapped to the photodiode 180 of blue light optimization and the photodiode 184 that green glow is optimized, the photon of these light is lower than the band-gap energy of the photodiode that blue light and green glow optimize, and part by and penetrate on green glow layering photodiode 184 and ruddiness layering photodiode 181.Compare and form earlier photocell separately and then put together, this hierarchy cost of layering hemisphere photodiode is lower.In this geometry, the electrode contact is illustrated as the conducting metal contact 183,181 of attaching.Internal layer contact 182 is attached to the exposed surface at ruddiness photodiode 181 centers, and antireflecting coating 174 is also passed in the surface of the blue photodiode layer 180 outside outer contacting part 183 is attached to.The example of the Elastic Contact geometry that contacts with this hemisphere bead is shown in Fig. 3, Figure 12 B and Figure 14.Ideally, electric contact piece 182,183 reverberation and do not stop light to arrive photodiode are as the Elastic Contact example of Figure 14.Mechanical Contact need contact 182 with central point and carry out center contact and aim at silicon ball with profile matching surface that the suitable radiation spectrum that electrically contacts and put into center ruddiness and peripheral blue light disperses pattern only to allow the layering photodiode.
Should also be mentioned that the antireflecting coating 174 of rough surface or gradient density can be advantageously utilised in this geometry to avoid typical quarter-wave antireflecting coating to reach the spectrum and the angle selectivity of the coating of mentioning previously.
If use semiconductor to keep the groove of cavity, the center contact can lobed button 182 and dielectric periphery coating 185, as extends to the edge that covers green glow photodiode 184 and blue photodiode 180 to prevent and antireflecting coating along the electric contact piece short circuit of groove.
In Figure 12 A, show by particulate bead layering photodiode being ground the alternative that on both sides, forms photodiode.By bead is ground on both sides, interior doped layer 274 and other photodiode 272 can be approaching by two electric contact pieces 273,275.Compare single planar side, this bead geometry with two planar sides also can be advantageously used in the formation electric contact piece.As the example of layering photodiode, form the InP bead 274 of 500 microns of diameters.InP bead 274 is doped and becomes the n N-type semiconductor N.Afterwards, the InP bead passes through metallo organic vapor phase epitaxy and the n type InGaAs layer 272 of coated about 2 micron thickness.Afterwards, apply the p type InGaAs layer 271 and the sputtering sedimentation gold chrome coating 270 of 2 micron thickness.Next, described bead both sides ground connection is by forming electric contact piece with nickel/golden contact 272,275 vacuum moulding machines or the center that is electroplated onto.The material of making layering photodiode or optical transmitting set has many variations.Other suitable substrate bead semiconductor is Ge, Si, SiC, GaAs, GaP, Ga, GaN, CdTe, AlGaP, AlGaP, AlGaAs, CuInSe
2, Cu (InGa) Se
2, GaSb, InAs, CuInSe
2, Cu (InGa) Se
2, CuInS, GaAs, InGaP, AlGaP and CdTe.
In Figure 12 B, show groove or cavity electric contact piece and have the photodiode bead of edge 281,292 and contact with center contact 286,285.In this example, have in the elastic groove 295 of two side contacts parts 280,287 and base contact 289 by layering photodiode bead being ground in the photodiode bead insertion dielectric 288 as shown in Figure 12 A of on both sides, constructing.Groove or cavity 295 are molded in elastomeric dielectric 288 outsides, as polyimides or the silicone rubber of metal foil substrate 289 as the tin top.Photodiode bead 281,282,283,284,290,291,292 is pressed in the groove 295.Two side contacts parts 280,287 press the center contact 286,285 of photodiode bead.The edge conductors 281,292 of photodiode bead contacts with the paper tinsel contact 289 of groove or cavity 295 bottoms, makes the photodiode bead press the base contact from the elastic compression of covering lens 293 or speculum.Molded cover glass 293 keeps by tension force and passes through under the compression pressure between glass 293 and the electrode substrate 288,289
Transparent interface adhesive 294 forms sealing with contact electrode 280,287, the temperature-curable that described adhesive is raising.Be lower than the working temperature of adhesive solidification, the thermal contraction of interface adhesive 294 produces tension force in adhesive, and this tension force will cover glass and electrode pulls to the other side mutually and produces the contact compression pressure.Other mechanical elasticity cavity or power scheme can be used for keeping the elastic contact pressure to photodiode 281,282,283,284,290,291,292.
In Figure 13 A, show the semiconductor bead and aim at and control system.In this system, the semiconductor bead 188 with planar side 189 is by vibrating from the sound 186 of sound generator 185 or by the vibration of support plate 190.Bead 188 will spin till they reach minimum energy, and the planar side of bead is positioned on the smooth Teflon surface 187, and this surface has the cavity of constrains ball.Different sound 186 intensity of shaking can be used for handling bead to move them away from described surface or they are rotated lenitively and adjust to the minimum energy state, and the planar side of bead 189 is on Teflon surface 187.Therefore Teflon187 has electrostatic charge, attracts bead 188, Teflon increase bead energy wells so that planar side 189 remain on the smooth Teflon surface 187.High-voltage electrode 190 can be placed on the back on Teflon surface 187, and applies high voltage from generator 191 to electrode 190.Can finish charging circuit and to the electric field circuit of charge electrodes 190 to strong some corona discharge of semiconductor bead 188 or contiguous electrode 193 or ground connection conductive surface 192 on every side.The electric field of induction and electric charge keep against Teflon surface 187 them on the semiconductor bead 188.
Figure 13 B illustrates, because the low coefficient of sliding friction on Teflon surface 204, the bead 201 usefulness pushing plates 200 that its planar side is aimed at described surface can be striden Teflon surface 204 and be slided rather than roll.Pushing plate 200 can promote semiconductor 201 so that semiconductor is aimed at by row, the Teflon surface 204 of all planar sides on the support plate 205.Pushing plate can have shaping cavity 202,203 each semiconductor is remained on position separately.If semiconductor positional fault or too many semiconductor is arranged from single row, these beads will not be installed in the shaping cavity 203 of pushing plate 200 and can separate with the bead 201 in groove 202 that is installed in pushing plate or the hole 203, and eject, with the contact lifting of silicone rubber surface or sweep from Teflon surperficial 204 and pushing plate 200.
Figure 13 C illustrates pushing plate 216 in the sectional view mode and is used for semiconductor bead 213 is pressed into shaping speculum or electric contact piece and elastic substrate 210.When bead 213 slipped into shaping cavity 212 and electric contact piece 211,219, the electric charge on the support plate 218 can be released or oppositely.Pushing plate 216 also can be heated and/or can have ping, in case bead 213 inserts and by electrically contacting clamper 210 when clamping, the contact 214,220 of bead 213 can be welded to electric contact piece 211,219 by ping.In case bead inserts clamper, these bead available light or magnetic field heating are to realize the welding of contact 214,220.The semiconductor bead can have electric contact piece 214,220, and it is made by magnetic material such as nickel.Therefore, magnetic attraction or the aligning to magnetized surface 218 can be used for aiming at and bead being remained on the clamper 218,217 in the magnetic field.Other characteristic that can be used for aiming at bead is used to aim at bead 213 for use the self poling electric field of bead 213 in electric field.Should also be mentioned that the viscosity and the static characteristic on the surface 215 of silicone-coating rubber can be used as the bead fixture, thereby enable to keep and transmit bead and can not roll.Inserting the semiconductor bead can finish with the electric contact piece 211,219 at 212 places of the shaped hole on the elastic base 210, described base stays open to be used for inserting and discharges then mechanically to be clipped in bead 213, the electric contact piece 214 of circular bead contacts with circular electric contact piece 211, and interior bead contact 220 contacts with the flat surfaces contact 219 of elastic retainers 210.Thereby the mechanical grip of clamper 210 also makes bead 213 be held pusher 216 can be separated and the pusher 216 of withdrawing with bead 213.Pusher 216 can have silicone tacky surfaces 215 in 222 inboards, surface that form, and out-of-alignment bead is shaken off so that the bead of aiming at can be bonded in the cavity.
In Figure 14, show reflection from lens mirror electrode pressure texture in the sectional view mode.Another structure that connects spherical ground connection semiconductor photo diode or earth rod 233 is to form the cavity with speculum contact 237,238,242, and these contacts only allow battery to press a direction connection.As shown in Figure 14, shaped depression or groove 239,241 have center contact 242 and side contacts part 239,238.These contacts 237,238,242 and path 243 can form by conductive powder printing ink is injected on dielectric substrate such as molded or the shaping polyimides 239,241 as silver, copper, nickel, graphite, aluminium, tin and alloy China ink.Other method that forms electric contact piece and circuit film 237,238,242,243 is for to be pressed in conductive sputtering film deposition, plasma jet, plating, paper tinsel on preformed flat board or the dielectric substrate 239,241.Other selection is that coating or laminated web metal substrate also are used as another back-protective surface 244 with the form with contact.Side contacts part 237,238 has part from the flat bottom of electric contact piece 237,238 and dielectric submount substrate 239,241 dielectric coating 235,236 of deposition upwards, if the circular surface of bead 233 contact center electric contact piece makes hemisphere bead 233 not electrically contact with side contacts part electrode 237,238.Dielectric coating 235,236 as Teflon or silicon-fluorine polymer thing can have low-friction coefficient with allow hemisphere bead 233 slide easily with rotation till the planar side direction of semiconductor photo diode bead 233 and groove or 239,241 the flat bottom surface of caving in are parallel.Put and make the planar side of bead 233 parallel with the bottom along with the deep-seated that keeps free bead to be installed in groove or depression towards the gravity of the groove or 239,241 bottoms of caving in and along with bead downwards, bead will reach the minimum energy state.If vibrational energy or acoustic energy are applied on the hemisphere bead, the rotatable and spin of bead is till the flat of bead is installed against groove or 239,241 the flat bottom of caving in.If apply electric field between electrode 239,242,238 and outer electrode (not shown), described graviational interaction can be enhanced.Thin dielectric film 239,241,234,236 is generally permanent electret, maybe can be caught to become electrode and use the electric field charging that applies.By on hemisphere bead 233, forming center contact 240 with ferromagnetic material such as nickel and center contact 242 being made by ferromagnetic material such as iron or nickel, make contact 242,240 magnetization then or put into magnetic field, bead is with preferred direction in magnetic field, and magnetic field will or be concentrated by 240,242 guiding of center contact.This can increase the energy wells of aiming at bead, the groove of the flat surfaces of bead 233 and speculum contact 238,237 or cave in 239,241 parallel.When bead by correctly on time, the contacts side surfaces of lateral electrode surface 237,238 and hemisphere bead 233.Photodiode semiconductor bead 233 will be doped usually to have and be entrained in inner positive charge carrier and be entrained in outside negative charge carrier.Therefore, the electric contact piece on the flat surfaces of bead 240 contacts with the P internal layer, and outer surface contact 237,238 contacts with the N layer.Because the side contacts part 237,238 and the coefficient of friction between the dielectric coating 235,236 of bead are poor, in case bead carries out Metal Contact, bead 233 is tending towards being fixed in the depression 239,241.Groove or cave in 239,241 shape and elasticity can be made into and makes it form wedge shape contact 237,238 on the either side of bead, thus at bead correctly to punctual maintenance bead.
Making alignment procedures also is useful in the temperature that raises, near the temperature of described rising, bead side contacts part 237,238 will weld or adhere to bead 233 outer surfaces, thereby make the side contacts part be bonded on the bead and maintenance bead when bead has carried out the parallel surfaces aligning and electrically contacted.Other possible maintenance scheme is that little adhesive, silicone rubber or viscous liquid droplet are arranged on the dielectric isolation layer 239,241 of groove or concave bottom, when the bead flat surfaces is aligned, contact reduction surface tension energy by flat surfaces with bead 233.This will and increase energy wells as the bead clamper and keep bead with the flat surfaces that the flat surfaces by bead is parallel to groove or depression.For removing unnecessary or out-of-alignment bead 233, turning assembly leaves with the bead 233 that utilizes gravity to make not remain in the appropriate location.Other selection is to put the forming tool with tacky surfaces coating such as silicone rubber, and when it was reduced to the array surface top, it will be only and unnecessary bead Mechanical Contact.The bead 233 that is in the out of position is compared the bead 233 that parallel surfaces aims at and is in higher position in groove or depression.Check that process that whether all beads 233 all aimed at can or have vacuum or the accurate instrument of tacky surfaces is finished by visible observation, described instrument is installed in groove or the depression and only contacts and remove and correctly is not installed in groove or the batteries in 239,241 of caving in.In case the flat surfaces of bead 233 and groove or 239,241,237,238 the flat surfaces of caving in are aimed at, electric contact piece 239,240,242,238 can be by guaranteeing to contact with bead 233 hot machines with photoflash lamp heating semiconductor bead 233, and the metallic object contact after the heating also makes bead 233 press electric contact piece 237,241,242.The transmission energy is that ultrasonic wave acoustic energy is transported in semiconductor bead 233 and the contact 237,242,238 with friction welding or welding contact with pulse with other possibility method of welding, soldering or welding contact.Electric pulse by circuit and battery 237,238,233,240,242 also can be used for making the electric contact piece arc-welding to semiconductor photo diode bead 233.Ifs circuit 237,238,233,240,242 short circuits, be connected to power supply or for charging capacitor, another electric contact piece welding, soldering, annealing or welding method are to use from semiconductor photo diode 233 from the electric pulse that produces, laser beam is striden battery scanning then, or photoflash lamp is luminous on the battery next door.Produce short electric pulse so that thereby disconnected heat pulse welding, soldering, annealing or welding contact to be provided at the Mechanical Contact point.Center contact 242 or side contacts part metallic film at dielectric substrate 241 tops can be designed to, and flow through local circuit then the electric fuse of open circuit if they cross multiple current as fusion and evaporated metal 242,237,238,243 with when following dielectric 239,241 is expanded.This can be used for that mistake is connected or the battery of short circuit disconnects connection.Guarantee that contact procedure also can be placed on above the battery at the assembly below fire-resistant lens and the speculum 231 and these batteries remain on by fire-resistant lens and speculum 231 and carry out after the appropriate location.Fire-resistant cover lens and speculum 231 can press semiconductor bead 233 to electrically contact and all to keep electrically contacting at the whole life period of solar array.Fire-resistant cover 231 can with the gravity pressure of elasticity tension in adhesive 232 and the contact material 237,239,238,241,242 and refractory material and remain on the semiconductor 233, contact material 237,242,238 all keeps in touch at the whole life period of array.Lens-mirror assembly thin plate 231 can have protectiveness or antireflecting coating on the outer surface.Suitable film is that fluorocarbon (Mihama), coating of titanium dioxide are so that outer surface light reaction and automatically cleaning, perhaps hard anti-scratch coating such as the diamond thin of reactive sputtering.Alternatively, as with the high pressure expressing technique with transparent adhesive or engage gel 234,232 (as Dow Corning
184 or gelQ3-6575) be dispersed on the battery.Glass or transparent dielectric cover lens-speculum 231 are placed on the top of optical coupling material 234,232, because laterally compressional movement, optical coupling material 234,232 is crushed on around semiconductor and the speculum, and bubble extrudes assembly by the gas passage in the adhesive pattern.Whole assembly can be used the temperature-curable that raises.Assembly can solidify under pressure so that lens-speculum thin plate 231 presses semiconductor bead 233 and keeps pressure to electric contact piece 237,240,242,238.Adhesive or optical coupling material 234,232 during the solidification process or afterwards shrink can be further during the solidification process or produce afterwards and make lens-speculum thin plate 231 be pressed in pressure on bead 233 and the contact 237,240,242,238.On the dorsal part and Metal Contact part 242 of dielectric substrate 239, apply transfer of radiant heat and protective coating 244 as being added with the silicone paint or the titanium dioxide silicone paint of carbon black.System's available light pulse, grating laser beam or electric pulse after the combination are tested, and short circuit battery or reverse battery can be removed from the series circuit in parallel of array by fusion or vaporization electric contact piece.Estimate to finish to the electric system of outside and the electrical connection of circuit by the solder joint that electrically contacts of glass material thin plate 231 edges.
Figure 15 is the circuit of series and parallel battery, in parallel between photovoltaic cell 253 and be connected in series in by thin-film electro conductor or dielectric, fuse or varistor 253,258, reverse current protection diode 254 or varistor 254 place on the outlet line.Reverse current protection element 254 also can the method the same with the doped semiconductor bead be seated in the elastic forming electric contact piece, has the inversion electron hole gradient to photodiode, shown in the schematic diagram among Figure 15.Reverse current protection diode 254 is not illustrated, and therefore can be placed on the outside of any smooth concentrated area between the reflection mirror array on the array edges.Thereby reverse current protection diode 254 can be regularly avoided endangering whole system because of any single protection diode or a string protection diode breakdown by being emitted in the array can mate protection diode voltage and current characteristics and to produce distributed reverse current protection.In the battery that is connected in parallel, the partial loss effect that single battery open circuit causes is 1 divided by the number of batteries that connects together.Be electrically connected in the network at series and parallel, the effect of Single Point of Faliure is proportional to capable partial loss divided by line number on the whole system, because can flow around Single Point of Faliure from the electric current of other row.The quantity of monocell fault is proportional to the total number of batteries in the circuit at random.Therefore, in battery that many equipotentials are connected in parallel and the big array that is connected in series, number of batteries in wherein any single file is directly proportional with the square root of battery sum in the array, and then the possible partial loss that is caused by single open fault at random is directly proportional with the reciprcoal square root of battery sum in the array.This statistics is observed has practice significance, and promptly for the series and parallel array, the quantity of single battery is high more in the array, because the partial loss that causes of battery failures is more little at random.Number of batteries is high more, and these photovoltaic arrays are reliable more, this and common counter-intuitive: battery is many more in the circuit, and fault and output loss probability are high more.In the high voltage array, reverse current protection battery 254 and bypass diode 257 can regularly be formed in the array by row.Parallel connection between the battery is electrically connected 253 walks around in the array because manufacturing defect or cover and be useful aspect the single battery of performance step-down electric current.Bypass diode 257 can be low in delegation's performance or the battery 252 of crested around conduction current.
In parallel be electrically connected 253 and be electrically connected in series 258 and can form effective fuse by thin conductive deposit on the dielectric insulation substrate or varistor, described deposit or varistor form with being chosen as with electric current, voltage or temperature electric conductor, the semiconductor deposition that has specific electrical resistance and increase that rise.The zinc-oxide film of specific examples will increase its resistance with the voltage that applies.Deposit can be vacuum sputtering deposit, China ink spray deposit, plasma spray deposition thing, paper tinsel embossing, be connected similar each semiconductor deposit with the photodiode bead.Most of metals have desirable low resistance characteristic when room temperature, increase with temperature rising resistance then.Flow through parallel connection or be electrically connected in series as the electric current times over single diode if cross multiple current, metal is owing to the European Union's energy dissipation in the material is generated heat.If the heat of electric current and generation is enough high, circuit possibility motlten metal even dielectric substrate, and forever disconnect the parallel circuits connection.Open circuit fusion between the battery 253 is used in the photocell short circuit or the permanent circuit that disconnects around these photocells when oppositely connecting.Device such as varistor 253 can be formed in the parallel circuits connection, and it is designed to increase with electric current rising resistance.Varistor 253 can be designed to reversibly fast in response to electric current too much and effectively clamp in parallel or be connected in series in maximum current.The photovoltaic array that illuminates was covered situation as the branch shade by selectivity under, for the protection photodiode exempts from excessive current and voltage, this maximum current clamp was extremely important.The array that schematically shows can connect 251,255 by peripheral bus and connect (250,256) to other array or electric loading.Can be connected electrically in other the possible electric device that reaches in output connection or the bus connection 250,256 with array combination shown in Fig. 9 is DC-DC transducer, DC-AC transducer, capacitor, battery, electrolytic cell, flywheel, motor, lamp, pump and fan.
Features more of the present invention and element comprise:
1, electric contact piece keeps being pressed on the semiconductor body with the elastic mechanical system.
2, use the shape of photodiode main body or electrode to determine that semiconductor is reverse.
3, use groove or hole that battery is installed.
4, use the planar side of ball to be used for keeping, directed and it is moved on to electrical connection.
5, groove still is electrically connected.
6, groove or speculum.
7, groove or transmittance.
8, the position of the electric contact piece on the ball and size can be advantageously used in the semiconductor operation.
9, electric contact piece has the thickness that fuse and circuit interruption electrical characteristics are provided.
10, electric contact piece can be a speculum.
11, electric contact piece can be transparent.
12, electric contact piece can be different with electric conductor or metal.
13, electric contact piece and semiconductor can form thermoelectric knot in fact.
14, electric contact piece and semiconductor can form the knot that produces light.
15, groove and electric contact piece form heat removal system.
16, electric contact piece and speculum are heat conductor with from the photodiode heat extraction.
17, the coating enhanced rad on the array dorsal part is distributed and heat extraction.
18, reflector/lens is a heat removal system.
19, reflector/lens is that machinery is installed and protection system.
20, using parallel connection to be connected in series provides reliable circuit to connect.
21, can use adhesive.
22, can use optical interface bridge joint or adhesive.
23, can use curable adhesive.
24, can use cohesive material that battery is fastened in the groove.
25, ball can be pressed in the groove to realize contact.
26, can use welding to finish contact.
27, can use welding to fix to realize electric contact piece.
28, can use photoflash lamp to fix to realize electric contact piece, photodiode produces electric current with welding and/or heating battery.
29, can use ultrasonic energy to finish welding or welding.
30, available film is applied to reflector or circuit with optics.
31, the bead in groove or the hole has two or more different contacts at either side.
32, must not use described shape (directed simply before entering groove).
33, array is the combination of lens/speculum, discrete semiconductor, electric contact piece and parts such as back of the body cover or speculum.
34, groove or hole can form in dielectric.
35, groove or hole can form in having the metal of dielectric coating.
36, groove or hole can form in the metal with dielectric and conductive coating.
37, the wall of shaping cavity can have the flexible structure of the electric contact piece of raising.
38, the wall of shaping cavity has groove, seam, ditch, protuberance, pedestal, fiber for electric contact piece elasticity.
39, the electropaining layer on the cavity contact surface has fiber, powder for electric contact piece elasticity.
40, the contact on the shaping cavity is elasticity multiform surface.
41, coating can deposit or form in many ways, as vacuum moulding machine, ink jet printing, pulverized powder.Silk screen printing, paper tinsel embossing, welding, impression or lamination.
42, use silicone rubber.
43, use fluorinated hydrocarbon.
44, use glass, aluminium, silver, tin, tin oxide, steel, copper, alloy, silicon ball,
Silicon, the ball that has electric contact piece on it, soldering paste, the coating that is added with carbon, TiO2, photochemical catalyst or white coating.
45, use the photochemical catalyst dipping or the material refractive index clear outer surface of glass outer surface, and stop high frequency light to arrive photodiode.
46, use groove the preferential positioning circuit of shade deposit or cover certainly.
47, electrical connection and substrate can form the light collecting system of photodiode.
48, photodiode array can be coupled to the concentrated optics of light.
49, electrical connection system can also be an optics.
50, the back-protective thin plate can also be on optical collector.
51, light scattering also can be used in the optics.
52, can use optical flare body or conversion.
53, the semiconductor rods that electrically contacts with holding tank is also as effective photovoltaic cell.
54, in-built electrical reverse current protection.
55, be transformed into battery inverter and electrical power electrical network.
56, use with sun tracing system.
57, use spectral separation or filtration.
58, flue or liquid flowing channel the array back side be can be placed on, and flow of liquid or air-flow cooling photodiode array used.
59, phase-change material can be thermally coupled to the back side of photodiode array to absorb heat from photovoltaic array and to deposit heat.
60, can connect electronic circuit to handle the electricity output of photovoltaic array.
61, battery can be connected to photovoltaic array with store electrical energy.
62, below electric contact piece, use elastic layer to guarantee to electrically contact and to make it to become thermal expansion and shrinkage-compensating device.
63, photovoltaic array being connected to the sun aims at or tracing system.
64, clamper is the resilient clamp device and can opens to accept semiconductor and closed to finish contact.
65, use electrostatic displacement and maintenance semiconductor.
66, use magnetic to move and keep semiconductor.
67, use gravity to move and keep semiconductor.
68, use tacky surfaces to keep semiconductor.
69, use tacky surfaces semiconductor to be remained on the place, bottom of groove.
70, use smooth surface so that semiconductor energy carries out non-rolling contact moves.
71, gravity can be used for cloche and lens/speculum are pressed into battery and electrode to keep the pressure between semiconductor and the contact.
When the present invention is described in conjunction with specific embodiment, can under the situation that does not deviate from the definite scope of the invention of following claim, the present invention be made amendment and change.
Claims (82)
1, a kind of equipment comprises: direct or indirect photon conversion device or generator; Arrangements of electric connection, this device comprises the granular semiconductor body that repeats to be shaped, the groove or the hole that are used to keep described semiconductor body of repeating to form, the photoconductive tube that arrives described semiconductor body, reaches at least two electrodes as the part in described groove or hole, and described groove or hole contact with each semiconductor body elastic compression.
2, according to the equipment of claim 1, wherein said photoconductive tube also comprises speculum, lens, transparent material, scintillator, phosphor, scattering surface, diffraction or interference structure.
3, according to the equipment of claim 1, wherein said photoconductive tube comprises speculum, refractor, lens, scintillator, phosphor, scattering surface or light is focused on the interference structure of photon conversion device.
4, according to the equipment of claim 1, also comprise non-flat forms printing opacity refraction cover, this cover is configured as to be assemblied on the shaping semiconductor body and with light and focuses on described semiconductor body, and wherein the semiconductor body that is electrically connected forms photovoltaic battery array.
5, according to the equipment of claim 1, wherein said hole or groove are configured as the shape that is fit to semiconductor body.
6, according to the equipment of claim 1, wherein each semiconductor body has shape, reaches each groove or hole and has shape, and these shapes will make assembly all can not carry out unsuitable electrical connection in any direction.
7, according to the equipment of claim 1, wherein each semiconductor body has shape and structure, and each groove or hole have and cause elasticity to be pressed in shape and structure on the described semiconductor body.
8, according to the equipment of claim 1, wherein each semiconductor body has shape and structure, and each groove or hole have and cause described at least two electrode elasticity to be pressed on two zoness of different of each semiconductor body to form the shape and the structure of photodiode or thermocouple.
9, according to the equipment of claim 1, wherein each semiconductor body has specific repetition shape and the structure that adapts to each groove or hole shape and structure, and also comprise the transmittance cover that is placed on the semiconductor body top, when semiconductor body was placed between described groove or hole and the described transmittance cover, described transmittance cover caused described at least two electrode elasticity to be pressed on two zoness of different of each semiconductor body to form photodiode.
10, according to the equipment of claim 1, wherein each semiconductor body has shape and structure, described equipment also comprises the transmittance cover, and wherein each groove or hole have and cause described at least two electrode elasticity to be pressed on two zoness of different of each semiconductor body to form the shape and the structure of photodiode.
11, according to the equipment of claim 1, wherein each semiconductor body has shape and structure, described equipment also comprises the transmittance cover, and wherein each groove or hole have and cause described at least two electrode elasticity to be pressed on two zoness of different of each semiconductor body to form the shape and the structure of photodiode, concentrate from carrying out light, or carry out light from electrode reflection, refraction, scattering, diffraction, interference or fluorescigenic light and concentrate by the refraction of transmittance dielectric cap, diffraction, scattering, the light of interfering, fluorescing or reflecting.
12, equipment according to claim 1, wherein each semiconductor body is electrically connected by using each groove or hole, each groove or hole have the part of two or more electrodes as groove or hole, and each groove or hole have and cause described two electrode elasticity to be pressed on two zoness of different of each semiconductor body to electrically contact and to form the shape and the structure of photodiode, described equipment also comprises shaping transmittance dielectric cap, from reflecting by the transmittance dielectric cap, diffraction, scattering, interfere, the light that fluoresces or reflect carries out light to be concentrated, or reflects from electrode, refraction, scattering, diffraction, interference or fluorescigenic light carry out light and concentrate.
13, equipment according to claim 1, wherein each shaping semiconductor body is electrically connected by using each groove or hole, each groove or hole have the part of two or more electrodes as groove or hole, and each groove or hole have and cause described at least two electrode elasticity to be pressed on two zoness of different of each semiconductor body to electrically contact and to form the shape and the structure of photodiode, described equipment also comprises shaping transmittance dielectric cap, from reflecting by the transmittance dielectric cap, diffraction, scattering, interfere, the light that fluoresces or reflect carries out light and concentrates, or reflect from electrode, refraction, scattering, diffraction, interfere or fluorescigenic light carries out light and concentrates, also comprise elastomeric dielectric material between described electrode and the outer elastic covering and the transmittance dielectric substance between described transmittance dielectric cap and semiconductor body or the outer elastic covering.
14, according to the equipment of claim 1, wherein each groove or hole can be pried open accepting the elastic construction that described semiconductor discharges sled power then, wedge in described groove or the hole and described semiconductor body remains under the pressure from described elastic construction thereby perhaps push away described semiconductor body.
15, according to the equipment of claim 1, wherein each semiconductor body has shape and structure, described equipment also comprises the transmittance cover, and wherein each groove or hole have and cause described two electrode elasticity to be pressed on two zoness of different of semiconductor body forming the shape and the structure of photodiode, and described electrode is fused, spreads, welding, soldering reach described transmittance cover and described groove or pore structure together and interfix.
16, according to the equipment of claim 1, wherein the light of photon conversion device conversion be sunlight, thermal radiation, the emission of radioactivity light, chemical light emission, from electric light source or laser.
17, equipment according to Claim 8, wherein photoconductive tube and groove or pore structure stick with glue agent, welding, welding, anchor clamps, securing member or interlocking member and interfix.
18, according to the equipment of claim 1, wherein said electrode is by vacuum moulding machine, powder deposition, ink jet printing, lamination, paper tinsel embossing, plasma jet, plating, gluing or in conjunction with being fixed to described groove or hole.
19, according to the equipment of claim 1, wherein each shaping semiconductor body has the flat site that is used at directed this semiconductor body of described groove or hole.
20, according to the equipment of claim 1, thereby wherein at least one semiconductor body has been doped to produce the superfluous zone in electronics surplus zone and hole and has produced overall gradient, and wherein said at least two electrodes comprise that electric conductor that contacts the superfluous zone of described electronics and the electric conductor that contacts superfluous zone, described hole and external voltage gradient are with the generation photodiode.
21, according to the equipment of claim 1, wherein at least one semiconductor body uses the electrical conductivity contact of two kinds of different materials and forms thermoelectric knot, electron tunneling knot or thermion knot.
22, according to the equipment of claim 1, be used as photovoltaic cell, optical transmitting set, heat energy-electric energy transducer or refrigerator.
23, according to the equipment of claim 1, also comprise electrical connection, this electrical connection also is the light collecting system of reflective optical system, refraction reflector, scatterer, scintillator or phosphor.
24, according to the equipment of claim 1, wherein said photoconductive tube is that the light that is coupled to formed photodiode is concentrated optics.
25, according to the equipment of claim 1, wherein formed groove or hole are the part of described photoconductive tube.
26, according to the equipment of claim 1, wherein formed groove or hole have charge carrier, and this charge carrier is also as light collection device.
27, according to the equipment of claim 1, also comprise the electrical connection that also is used as fuse, described fuse is connected by the electric conductor that makes low amount or is surrounded realization by dielectric substance.
28, according to the equipment of claim 1, wherein said electrode is formed by conductive foil, film, fiber, matrix, pedestal, hair, structure, net, powder, elasticity multiform surface or this lip-deep film.
29, according to the equipment of claim 1, wherein said electrode is deposited on the dielectric substrate with sputter, vacuum evaporation, plasma jet, powderject, ink jet printing, silk screen printing, plating or paper tinsel lamination.
30, according to the equipment of claim 1, wherein said electrode is by the elastomeric dielectric materials for support on another elastic conducting material.
31, according to equipment, the elastic compression elasticity bridge joint of wherein said electrode or the different heat expansion of cushion space member of claim 1.
32, according to the equipment of claim 1, wherein said electrode has electric contact piece, and wherein the structure of photoconductive tube, optics, electric contact piece and boundary material forms pleat, nest, multiform surface, curve and crooked with the thermal expansion stress between redirected or the dispersion.
33, according to the equipment of claim 32, wherein optics, electric contact piece and boundary material form pleat, nest, multiform surface, curve and the bending heat transmission with the liquid of modification transfer of radiant heat and contiguous elastic packing.
34,, comprise also that on contact one outer surface radiation is distributed or convection current strengthens heat transfer structure or material coating according to the equipment of claim 33.
35, according to the equipment of claim 1, wherein said shaping semiconductor is directed before in being placed on described groove or hole, moves and remains on the low-friction surface.
36, according to the equipment of claim 1, wherein said groove or hole have the thin dielectric film that is coated on the described electrode part.
37, according to the equipment of claim 1, wherein said groove or hole have low-friction coefficient dielectric such as fluorocarbon or the silicone lubricant in the part that is deposited on described groove or hole.
38, according to the equipment of claim 1, also comprise: gravity, electrostatic charge, electric field or magnetic field can be used on the described semiconductor with directed or keep described semiconductor.
39,, comprise that also tacky surfaces can be positioned at formed groove or hole and be used for that the shaping semiconductor remained on described grooving or hole or as the interim surface that keeps according to the equipment of claim 1.
40, according to the equipment of claim 1, wherein said shaping semiconductor body is photodiode and is a side or many side joints ground, cutting, the molded or ball that flattens that at least one electrodes is to planar side.
41, according to the equipment of claim 1, wherein said shaping semiconductor body forms photodiode by a semi-conductive side or many side joints ground, cutting, spherical or coccoid molded or that flatten, at least one electrodes is to the ground connection side, another electrodes makes electrode not be in contact with one another to another zone of shaping semiconductor body.
42, according to the equipment of claim 1, wherein said shaping semiconductor forms to form a plurality of photodiodes with multi-layer doping agent or material.
43, according to the equipment of claim 1, the spectrum after wherein said photoconductive tube fractionation spectrum also will split is put into the zones of different of described shaping semiconductor body best.
44, according to the equipment of claim 1, wherein said electrode is from described semiconductor heat extraction.
45, according to the equipment of claim 1, also on the transducer face of light source shielding, comprise coating, wherein the radiant heat of this coating enhancing from described surface distributes or convection current, and this coating also comprises projection, fiber, fin, nest or ridge or is added with the polymer or the rubber film of titanium dioxide fine particles, graphite particulate or carbon black particle.
46, according to the equipment of claim 1, wherein said photoconductive tube is thermally coupled to described semiconductor.
47, according to the equipment of claim 1, wherein said photoconductive tube also forms the described semi-conductive cover of part or all of encirclement.
48, according to the equipment of claim 1, wherein form in parallel and the gate array that is connected in series to described semi-conductive electrical connection.
49, according to the equipment of claim 1, wherein to describedly semi-conductively electrically connect as that the electric conductor adjacent with the greater amount insulator is overheated at electric conductor to be used for, open circuit when fusion or vaporization.
50, according to the equipment of claim 1, wherein form in parallel and the gate array that is connected in series to described semi-conductive electrical connection, wherein the electrical connection of the parallel connection between the semiconductor is the electric conductor that increases resistivity with electric current.
51, according to the equipment of claim 1, wherein said semiconductor or electrode stick with glue agent and keep.
52, according to the equipment of claim 1, wherein said photoconductive tube sticks with glue agent and is fixed to described photodiode.
53, according to the equipment of claim 1, wherein said semiconductor or electrode stick with glue agent and keep, and this adhesive also reduces the light reflection between described photoconductive tube and the described semiconductor.
54, according to the equipment of claim 1, at the interface, it has the surface treatment that reduces the light reflection by destruction interference coating or refractive index gradient to wherein said photoconductive tube externally and between the described semiconductor.
55, according to the equipment of claim 1, wherein said semiconductor or electrode stick with glue agent and keep, and this adhesive has the curing that is started by light, heat, variations in temperature, humidity, chemical contact, chemical diffusion, vibration or radiation.
56, according to the equipment of claim 1, wherein said semiconductor keeps so that described semiconductor is fixed tightly in described groove or the hole with cohesive material.
57, according to the equipment of claim 1, the heating by contact, glisten from heat conduction, hot gas absorption, laser absorption, vibrational energy or electric current of wherein said semiconductor and electrode is with the fixing electric contact piece of welding, welding, diffusion, soldering or fusion.
58, according to the equipment of claim 1, wherein said electrode is the diaphragm type circuit.
59, according to the equipment of claim 1, wherein said electrode is the diaphragm type circuit that is deposited on the fire-resistant optics.
60, according to the equipment of claim 1, wherein said electrode is the diaphragm type circuit that is deposited on the fire-resistant optics, and described electrode also reflects light to described semiconductor.
61, according to the equipment of claim 1, wherein second grooving or hole are used for keeping and locating described semiconductor so that this semiconductor is put into formed groove or hole.
62, according to the equipment of claim 1, wherein a plurality of semiconductor bodies and groove or hole are formed in the array with circuit network.
63, according to the equipment of claim 1, wherein a plurality of semiconductor bodies and groove or hole are formed in the array, wherein have light for each semiconductor equalizing and concentrate optics and circuit network to contact with described semi-conductor electricity.
64, according to the equipment of claim 1, wherein a plurality of semiconductor bodies and groove or hole form the light change-over circuit, and wherein a plurality of semiconductors are in parallel to be electrically connected, and the semiconductor that is electrically connected in parallel is connected in series to form electric matrix with other semiconductor that is electrically connected in parallel.
65, according to the equipment of claim 1, wherein a plurality of semiconductor bodies and groove or hole form the light change-over circuit, wherein a plurality of semiconductors are in parallel to be electrically connected, and these semiconductors that are electrically connected in parallel are connected in series to form electric matrix with other semiconductor that is electrically connected in parallel, this electric matrix is placed in the groove or hole that is electrically connected in parallel semiconductor body, the bypass diode during high voltage situation around the semiconductor that these grooves or hole are connected in parallel as photon conversion.
66, according to the equipment of claim 1, wherein a plurality of semiconductor bodies and groove or hole form the light change-over circuit, wherein a plurality of semiconductors are in parallel to be electrically connected, and these semiconductors that are electrically connected in parallel are connected in series with the formation electric matrix, in the groove or hole of the blocking diode when semiconductor body is placed on as the reverse current situation with other semiconductor that is electrically connected in parallel.
67, according to the equipment of claim 1, wherein said groove or hole are formed in the dielectric substance.
68, according to the equipment of claim 1, wherein said groove or hole are formed by the dielectric substance of coated with conductive material.
69, according to the equipment of claim 1, wherein said groove or hole or electrode have texture, projection, particulate, ridge, groove, fin, hair or elasticity multiform surface.
70, according to the equipment of claim 1, wherein said semiconductor body is formed by one of following semiconductor: mix the silicon of arsenic, the silicon of mixing phosphorus, SiC, InAs, CuInSe
2, Cu (InGa) Se
2, CuInS, GaAs, InGaP, CdTe, AlGaAs, AlGaP, Ge or these semi-conductive layers.
71, according to the equipment of claim 1, wherein said groove or hole form in one of following dielectric: glass, polyimide plastic, Nomex plastics, polyester, fluorinated hydrocarbon, pottery, the steel of silicone-coating rubber or aluminium, the steel of silicone-coating fluorocarbon or aluminium, the steel of coated glass, copper, brass or aluminium, the steel of coated ceramic, or the plastics of coated steel or aluminium.
72, according to the equipment of claim 1, wherein said electrode is formed by one of following electric conductor: gold, platinum, palladium, silver, tin, aluminium, antimony, lead, copper, zinc, titanium, molybdenum, tantalum, tungsten, aluminium, nickel, carbon, silicon, iron, chromium, vanadium, niobium, pick, indium, comprise the alloy of one of these materials, perhaps formed by one of following conductive compound: tin oxide, zinc oxide or boron-doped diamond.
73,, also comprise the dielectric cap that forms by glass, transmittance plastics, fluorocarbon plastics and silicone fluorocarbon according to the equipment of claim 1.
74, according to the equipment of claim 2, wherein scatterer is formed by titanium dioxide fine particles.
75, according to the equipment of claim 2, wherein said scintillator forms by mixing anthracene plastics or rubber.
76, according to the equipment of claim 2, wherein said phosphor is formed by zinc sulfate or the yttrium-aluminium-garnet of mixing copper or silver.
77, according to the equipment of claim 1, wherein said semiconductor is formed by the doped silicon ball and has at least one planar side.
78, according to the equipment of claim 1, wherein said semiconductor is made with the doped silicon ball, inside and another carrier that carrier is entrained in described ball are entrained on the top layer of described ball, at least one cutting or ground connection parapodum are enough smooth with the exposed inner doped region, and the electrical conductor material spot is attached to the flat site that exposes described inner doped region.
79, according to the equipment of claim 1, wherein said semiconductor body parallel connection is electrically connected to other semi-conductive array and is connected in series to semiconductor and is connected to one or more of following electric device: lead, diode, switch, fuse, capacitor, battery, fuel cell, flywheel, DC-DC transducer, DC-AC transducer.
80, according to the equipment of claim 3, wherein light concentrates optics sensing and sun-tracing disk so that light is focused in the photodiode.
81, according to the equipment of claim 4, wherein said array has shell in the direction of array away from the surface of light source, this shell make liquid by described surface with by convection current, the flow of liquid that pumps into and vaporization heat extraction.
82, according to the equipment of claim 4, wherein said array has shell in the direction of array away from the surface of light source, and this shell keeps the material of the hot phase transformation of experience to absorb heat from photodiode.
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| US81927306P | 2006-07-07 | 2006-07-07 | |
| US60/819,273 | 2006-07-07 |
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| CN101501979A true CN101501979A (en) | 2009-08-05 |
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| CNA2007800257432A Pending CN101501979A (en) | 2006-07-07 | 2007-07-09 | Micro concentrators elastically coupled with spherical photovoltaic cells |
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| EP (1) | EP2038936A2 (en) |
| JP (1) | JP2009543376A (en) |
| KR (1) | KR101443043B1 (en) |
| CN (1) | CN101501979A (en) |
| AU (1) | AU2007269559A1 (en) |
| CA (1) | CA2657099C (en) |
| MX (1) | MX2009000045A (en) |
| TW (1) | TWI466304B (en) |
| WO (1) | WO2008005557A2 (en) |
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| CN110390863A (en) * | 2019-07-22 | 2019-10-29 | 中国原子能科学研究院 | Using the thermionic generation experimental provision of electrode assembly integral solder technique |
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| FR2942058B1 (en) * | 2009-02-06 | 2011-03-11 | Univ Sud Toulon Var | METHOD FOR OPTIMIZED CALCULATION OF A DEVICE FOR CONCENTRATING RADIUSES, IN PARTICULAR SOLAR RAYS, AND A RADIATION CONCENTRATOR THUS OBTAINED |
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- 2007-07-09 WO PCT/US2007/015623 patent/WO2008005557A2/en active Application Filing
- 2007-07-09 AU AU2007269559A patent/AU2007269559A1/en not_active Abandoned
- 2007-07-09 KR KR1020097000238A patent/KR101443043B1/en not_active IP Right Cessation
- 2007-07-09 JP JP2009519476A patent/JP2009543376A/en active Pending
- 2007-07-09 EP EP07810263A patent/EP2038936A2/en not_active Withdrawn
- 2007-07-09 CN CNA2007800257432A patent/CN101501979A/en active Pending
- 2007-07-09 CA CA2657099A patent/CA2657099C/en not_active Expired - Fee Related
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| CN104852677A (en) * | 2015-03-19 | 2015-08-19 | 华南理工大学 | Micro-lens light-absorbing and micro-spherical silicon light-condensing combined solar cell |
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| CN110390863B (en) * | 2019-07-22 | 2021-08-20 | 中国原子能科学研究院 | Thermal ion power generation experimental device adopting electrode assembly integral welding process |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090042229A (en) | 2009-04-29 |
| JP2009543376A (en) | 2009-12-03 |
| KR101443043B1 (en) | 2014-10-02 |
| TWI466304B (en) | 2014-12-21 |
| WO2008005557A9 (en) | 2008-02-21 |
| CA2657099C (en) | 2016-03-29 |
| TW200824134A (en) | 2008-06-01 |
| CA2657099A1 (en) | 2008-01-10 |
| MX2009000045A (en) | 2009-03-24 |
| EP2038936A2 (en) | 2009-03-25 |
| AU2007269559A1 (en) | 2008-01-10 |
| WO2008005557A3 (en) | 2009-04-02 |
| WO2008005557A2 (en) | 2008-01-10 |
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