TW200824134A - Micro concentrators elastically coupled with spherical photovoltaic cells - Google Patents

Abstract

With small dimensional optics, small photovoltaic cells, heat distribution surfaces, very high concentrations and subsequently high utilization of the semiconductors can be achieved. Discrete photodiodes can be formed as spherical and other geometric shaped, cells with high performance characteristics, precision dimensions, and low cost. This invention positions discrete photovoltaic cells by using their geometric shape, elastic electrical mounts, couples them to small optical concentrator systems of refractory and or reflective optics and makes electrical network connections to those photodiodes, reliably, adjusting for thermal expansion, and at low cost to form low cost and reliable electrical power arrays. The electrical connectors and network can form part of the reflective optics and heat removal system. The electrical interconnection system can also form a reliable network that is self-correcting and tolerant of point failures.

Description

200824134 IX. Description of the invention: [Technical field to which the invention pertains] Battery elastically coupled miniature The present invention relates to a spherical photovoltaic concentrator. [Prior Art] In fine weather _, the sun goes to every level: the energy of the upper 1,:: watt. Solar to electricity conversion =

An ideal power solution for the gradual rise in energy demand on the ball. Sun Ten = Mainly limited to the high cost of the system. Currently, the best, has reached a cost of about $2 per watt, but, for the pool system ^ ^ ^ 竞争 compete with the conventional power supply, and to achieve four times the cost reduction or reach $ 〇 5 per watt. Almost all of the cost of a solar array is due to the current large number of expensive semiconductors used in cell devices. Current solar power: Technology makes arrays expensive, inefficient, and sometimes impossible. Our innovation is to mass produce elastic contacts (which also concentrate light: using expensive semiconductors). The battery array is not overheated by the effect of effective heat removal of smaller discrete photovoltaic cells. The method of reducing efficiency can reduce the cost of system semiconductors. If the cost per unit area of the concentrated optical device is significantly lower than the cost of the semiconductor, the total cost per unit area of the photovoltaic special battery, the cost of the generated electric power is reduced. We estimate that the cost of materials from four to hundreds of times the cost of photovoltaic cells can be reduced due to the far lower cost of semiconductor micro-optical concentration systems. The practical state of photovoltaic arrays that form thousands of discrete photodiodes 7 200824134 has led to the challenge of reliably and efficiently forming electrical and thermal connections to thousands of discrete semiconductors over a range of temperatures. It has been found that attempts to form long strings of polyoxynitride diodes mounted on plastic substrates result in stress and crack failure due to differential thermal expansion occurring in the assembly. In this patent 'elastic electrical contacts and thermal contacts are used to hold the semiconductor body in place and the assembled system is bendable and subjected to a wide range of temperature changes without loss of a series of temperature coefficients Contact between materials or mechanical disintegration occurs. It is also possible to periodically change the geometry of the electrical contacts on the substrate and the direction of the circuit to avoid accumulation of yield stress in the electrical contacts due to differential thermal expansion or bending of the system. Thereby, the electrical contacts are held in an elastic state. The electrical contacts can be welded or welded together to maintain the elastic compression on the welding or fusion joints to prevent the electrical contacts from achieving yield stresses in the weld or weld joints due to thermal expansion and mechanical vibration. Elastic contacts make it possible to organize the components in a wide tolerance range. 0 concentrating, efficient and cooling

^ "Single into 1, /L* 'Send a simple observation of '1' such as 'the raindrops on the leaves can concentrate the sun hundreds of times into small dots without igniting the leaves. #集中集中阳光' solar cells It can operate more efficiently and cost-effectively, using expensive semiconductor materials to transform solar cells into a practical array of photovoltaic devices that can be fabricated into discrete cells, electrical connections, and disk micro-concentration mirrors and lenses. Patent 5,482,568 ^We have established several centralized systems for testing this (4). Solar concentrator system (which uses 2 (^吉/-门心', A ^ 1 text with 2 em diameter cylindrical glass rod, Ming Peel back reflector And 2 mm #纴曰见,,,〇日日先伏电池) Achieved a seven-fold increase in power output compared to 8 200824134 Photovoltaic cells without concentrated optics. Exist in photovoltaic cells with light concentration Negligible temperature rise can be neglected. In another experiment, we have observed that the focus from the microscopy objective lens with a spot size of 18 microns on a polyoxyxide photovoltaic cell achieves 34,000 suns of optics. At the same time, only a temperature rise of 2 degrees is experienced at the same time. The performance of the photovoltaic cell only experiences a performance degradation of 3% due to the higher concentration of light on the photovoltaic cell to a single point. Thus, with small-sized optics, Small photovoltaic cells and heat distribution surfaces enable extremely high concentration of semiconductors and thus high availability. The invention of this patent focuses on the reliable and low cost formation of a large number of optical concentrators and individual cells to form practical power. A practical aspect of the system. The electrical connector can form part of a reflective optic as in the prior U.S. Patent No. 5,482,568. This electrical interconnection system can also form a reliable network that allows for point failure. Prior Art Patents and Patent Applications List of US 4,638,110, US 4,818,337, US 4,834,805, US 5,374,317 'US 5,482,568, US 5,942,050, US 6,008,449, US 6,252,155, US 6,294,723 B2, US 6,366,41 1 Bl, US 6,440,769 B2, US 6,653,5 5 US 5,785,768, US 6,198,03 7, US 6,204,545, US 6,294,822, US 6,744,073, US 6,706,959, US 6,881,893, US 6,897,08 5 B2, US 6, 966, 661 B2, U.S. Patent Application No. 20040026206, U.S. Patent Application No. 20040026207, U.S. Patent Application No. 2004009957, U.S. Patent Application No. 20040001259, U.S. Patent Application No. 20040182432, U.S. Patent Application No. 20040238833, U.S. Patent Application No. 20050067622 9 200824134 Patent Application Office (4) Purchase, US Patent Application, Detecting Missing, Wu Guo Patent Application 20050121813, and US Patent... 20060000503 发明 [Summary of the Invention] The present invention guides the installation, connection and use of the mouth (four) Han used small light two The polar body, and the ray is led to the light diode, to provide the Leigong table to solve the problem of efficiency and economy in the electric power production from the solar ray. With the smaller size optics, the smaller main workmanship, and the heat distribution surface, the extremely high concentration of the semiconductor can be achieved (since the discrete photodiode can be formed into a pale ancient μ a The heart becomes a spherical and other geometric shape with outstanding performance characteristics, precise size and low cost. * The geometry of the photovoltaic cell is clearly positioned by using a discrete cell to locate the discrete photovoltaic special electric... 4 away Putting photovoltaics f, silk to refractory and the smaller optical concentration crying ▲ 亢 为 为 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The optical diode connection of the optical diode, the cost and reliability of the electrical power array, the electrical connector and the networked device and the part of the thermal removal system. The electrical interconnection system can also be positive and allow reliable turnaround (4). [Embodiment] In the following blocks φ &, in the drawings, several typical examples of the invention are made. Cutting in a dielectric material: several variations of the mounting and configuration. In Figure 1, ... bad' or by something like The soda lime is broken into the trough. The glass trough shape + % of the material is poured into the mold - the side 4 is bent to become the flat portion 3 on one side, and the other is matched later in Fig. 3 The side is slotted half 200824134 The curvature of the circular sphere. The slot 2 can have a slight taper on the flat portion 3 to accommodate small mounting variations of the semiconductor and achieve a tight wedge fit of the semiconductor sphere to the slot 2. Examples of dielectric materials are: • Polyarsenide plastic (Asahi-Kasei Chemicals Corporation Co. Ltd. Aramica Division ' 1-3-1 Yakoh, Kawaski-Ku, Kawasaki City, Kanagwa 210-0863, Japan). Imine Plastics, DuPont Films, HPF Customer Service, Wilmington, DE 19880 〇

• Polyoxyethylene rubber, Sylgard® 184 polyoxyl optical coupling adhesive Dow Corning, Dow Corning Corporation, Auburn factory, 53〇〇11 Mile Road, Auburn MI 4861 1 USA 〇• EVA EWax® (ethylene vinyl acetate) Dup 〇nt c〇rp〇rati〇n, Wilmington, DE 19880. In Figure 2, a cross-sectional view of dielectric u is shown in which slot i3 is cut or molded into the dielectric. This Figure 2 can also be used as an example of a cross section through an arcuate hemispherical hole holding a single semiconductor bead. In this Figure 2, an elastic substrate film 17, such as a polyoxyxene rubber (Sylgard® 184 polyoxyl optically coupled adhesive), is deposited into the grooves 13 in the dielectric glass substrate material u and allowed to cure. Conductive films ^^, ^, ^ (such as gold, platinum, palladium, silver, tin, aluminum, bismuth, lead, copper, zinc, titanium, molybdenum, button, tungsten, indium, nickel, carbon, seconds, iron , chromium, hunger, bismuth, erroneous, copper, alloys of such materials or conductive compounds such as tin oxide, oxidized, or doped diamonds are vacuum evaporated onto the elastic film 17. The conductive film 12 is deposited to a half of the groove 13 of the towel. When the semiconductor bead is firmly in place in 200824134, the contact points i2, i4 of the conductive film in contact with the semiconductor bead will approach the top of the edge of f. The electrical contact thin film 12, " does not deposit on the dielectric base & P (slot 16). The gap 16 in the conductive films 12, 14 forms an electrical disconnection portion in the 1-body mount. The flat electrode surface 12 of the flat 3 is in contact with the respective flat and curved electrodes of the photodiode. The kinematic mount defining the semiconductor bead shown in Figure 3 is not placed in Figure 3; , a spherical cross-section of the spherical beads 25, 24, 29, 26 of the semiconductor in the slot 31 of the double electric bell 21; a k-sectional view of the second (five) t. A flat side pair of photodiode beads 32 such as a Sphela_ ray dimmer (trademark of SPhelar9' Kyosemi c〇rp〇mi〇n, 949 2 EbiSU-cho, Fushimi_kuKy〇t〇shi6i2 82〇i, 曰本) Admit to groove 33 or the flat side of the hole. When correct: the quasi-beads should slide into the slots 31 or holes 31 and fill the holes 3丨 almost completely. Although the spherical beads with the flat sides are not properly aligned with the holes or slots 3 1 , the beads should not be able to slide all the way into the holes or slots. Such a key-like feature avoids the polarity reduction of the connected battery and enables the use of the squeak to vibrate the bead or vibrate the substrate 21 to "shake" the beads 25, 24, 29, Μ, % to the correct orientation and In the quasi-direction, the semiconductor beads are simultaneously placed in the slots (the optimal electrical contacts 23, 26 are in contact with the film contacts 32, 27 of the slots or holes 31). By the presence of a viscous, electrostatic film or energy absorbing surface 32 at the bottom of the hole or slot 31 (such as when the beads have properly fitted into the groove and are in contact with the bottom of the groove, the beads will remain in the hole or slot) 31. The trough can be part of a larger lamella frame that can be swayed open during filling by the bead and can release larger flakes when the bead is fully seated in place and ^ 12 200824134 is packed in the trough The frame thereby forms a cool force on the beads and makes electrical contact.

In operation, light penetrates the semiconductor beads 24, 25 in the P/N (tetra) dummy layer 24, 25 of the electron hole pair (p-doped region is internal U, and n-doped semiconductor 24 is external). The separation of the electron pairs forms the positive polarity of the flat h of the beads 33 (negative polarity on the external contacts on the beads 26). The voltage and current can be supplied to the reverse process of the i p/N junction, and the photodiode is recombined to generate light. The p material 25 and the electrical contact contact electrode 22 form a junction of the thermocouple. The N material 24, the electric cattle 26 and the electrode 27 can form the other junction of the thermocouple. If the semiconductor junction 25 is heated by light or two external rays, the rabbit contact is designed to have enough - to allow the body to connect φ 25, 24 pole fins 20, 28, Set the danger, the car and the electric torah a liter, and the degree of 'from the semiconductor 25, 24, electrode contact points 26, 23, is snow. % (Seedbe η and the temperature gradient of the electrodes 20, 28' are the Schiebeck connection (the voltage should be formed on the ground. These batteries can be connected in series =:=:) / generate electric power. - ^ except from the electrodes 20, 28 ::This and ":, then the junctions 24, 25 will move 24.25' (Peltier) low teaching rate 'such as. Money contacts 26 and 23 can be formed to have a wear layer. Pot 1 right to the electrical contact The component is formed as a point contact and the dielectric portion has a heat transfer possible electrical contact for the vacuum gap of the contact member 26 to occur, and the electron from the electrode is brought from the substrate U and the semiconductor bead contact member 23; == 27. The elastic compression of the upper two electrodes 2, 13 200824134 28 sub-layers 19, 34 maintains the contact dimensions between the components, while the system can withstand a range of temperatures, and the expansion coefficient can be at the electrodes 2, 28 The substrate 21' and the semiconductors 24, 25 are very different. The assembly of the semiconductor beads in the slots or holes 31 is followed by a larger array of cells that are lightly coupled to the optics and connected in series and in parallel. 20 for photovoltaic arrays, light-emitting diodes, thermocouples, or The circuit of the ear chiller or the thermionic converter. In the bottom of the slot 31, a glue is used to secure the battery into the slot. The glue 30 (such as Sylgard® 184) can be optically transparent and used as a substrate. The optical coupling material between the material 21 and the semiconductor bead 32 is required for operation if sunlight enters the semiconductor bead 32 via the substrate 21. The glue 30 may also be accompanied by an anti-reflective coating 29 on the exterior of the bead ( Anti-reflective fluorocarbon coating, which is used as an anti-reflective coating in India (4) (10), ns T〇ranomon, Minato_kuT〇ky〇1〇5 8437, Japan). It should be noted that the semiconductor 25 < In the groove geometry, in Fig. 4, an example of a hole 37 in the shape of a mating bead and an electrical connection wire is shown. The hole has a flat region (where the electrical contact film is deposited on the flat region of the f), (Electrical disconnection region 38) is shielded, and the second electrical contact is shown through the circular side 4 of the coating hole 37. When the asymmetric semiconductor bead shown in the schematic, cross-section of Figure 3 is placed In the hole 3, only the flat surface of the Lingtian bead is 36 When the ball is parallel, the beads are allowed to slide into the holes. The contacts 54 and 51 in Figure 5 show an array of semiconductor spheres 52 attached to the electrodes 53, 55 to the transparent optical lens/mirror 50. The horizontal 14 200824134

Sectional view. Forming the photodiode array by coating a shaped frit 5 具有 having an outer region of the two curved beams (where the anti-reflective coating is on the crucible surface 58) will be separated by 50 The side is shaped as a concentrated mirror. A mirror coating and electrically conductive films 51, 53, 55 are applied to the back surface of the glass 50. The back side of the glass or transparent material EVA 50 has a groove 49 for forming a semiconductor bead of its t' 49 which is shaped such that the semiconductor bead is cut into the slot, which elastically holds the bead. Metal to metal connection between beads and walls

The taper of the approximately five-degree bevel of the groove wall at the contact will ensure that the bead will not slip out (because the friction is much higher than the force of the sliding wedge), the angle is controlled by the true m inkjet printing. (d) Electro (IV) coating the deposited mirror coating and electrodes 54, 51, 53, 55 to coat the specular reflector region and not in the bottom of the groove 49 in the glass 50 to form an electrical disconnect between the electrodes Part of the n-coating zone 4 49 is light transmissive. The appropriate film tin for the specular reflector electricity 3554, 51, 53, 55 is formed by coating the glass with tin and then oxidized to tin oxide to become transparently inserted and molded into In the groove of the glass, the shaped back cover plate is placed on the array of the light body body body and glued to the array of the glass optics 2 diode by the polyoxyethylene rubber sealant. The back plate, the reflector and the heat sink 56 The placement can apply an elastic pressure to the semiconductor sphere via the dielectric film 59 of the moon plate 56. The dielectric material 59 can be a polyoxyethylene rubber or a polyimide, and the backing plate can also be attached to the electrode 54. , 51, 53, 55, semiconductor beads 52, and glass π glue. The glue can also seep upwards It penetrates into the groove 49 between the semiconductor 52 and the glass 5 and serves as a refractive index transition material between the glass and the semiconductor 49. The sealing layer is also placed on the periphery or the array to seal the body to prevent dust 15 200824134 and 5. The aluminum backing plate may have a bright polished surface facing the solar cell, or a white scattering surface. The outer surface of the backing plate may have a coating, a color coating, to help the back surface radiation area. Keep the back plane / Jingshuang can also use the poly stone rubber sealant to seal the back side of the battery, and ensure excellent thermal contact between the battery and the back plane. Can be heated in a vacuum furnace or by a battery Biasing is performed to illuminate the flash to form a larger charge* to dissolve all of the contacts to ensure electrical contact between the electrodes 54, 5, 53, 55 and the semiconductor beads 52. Other possible contact assurance methods are to direct heat to interface contact An energy ultrasonic pulse through the glass or bead to the contact. - A soldering lead that can be attached to the edges of the circuits 54, 55 by ultrasonic pulses. In Figure δ, the germanium semiconductor bead 65 is placed to Replacement on surface 66: in this design, back surface 66 is extruded glass flakes, polyimide, or rolled or stamped steel or aluminum foil 67, which is dielectric (Shishibo)螭 66) coated, and having a polyxylene bead positioning groove 69 formed therein having an electrically conductive coating 64 of a silver or tin vacuum evaporation surface coated thereon, and - by masking or lending The gap 69 formed by the groove 69 "shield of the shoulder. The reflective material (such as silver, tin, or white scattering material) may be applied to the back side of the substrate 66, if the dielectric is Transparent or translucent, the coating will act as a reflector for light passing through the insulating gap 69. On the outer surface 67, a black radiator coating 68 can be applied. In some If open y, black radiation can be omitted The body 68 is coated and the reflective coating is Μ, and the space under the array can be illuminated using light that passes through the battery 65. In this case, the light concentration system is on an extruded glass sheet 60. 16 200824134 The light concentration system has an upper lens 61, a mirror 62 < a lower array' and a groove (a) formed to loosely fit around the stone semiconductor light -6. In order to form a complete array 'to the periphery and possibly between the photodiode "with glass 60", the glass flakes 60 are attached to the photodiode region by a glue such as a silicone rubber sealant 85. If the polyoxyxene rubber The sealant Μ (such as Sylgard® 184) is optically transparent and can be placed in the array.

In the column, used as the "optical consumption interface." The electrical output of the array passes through the electrically conductive film 64 and is transmitted through the edges of the array. Figure 7: Configuration with optical concentration of three-dimensional optics. In this figure, the lens 7〇 and the mirror ^ are packaged in a hexagonal pattern 81. Other possible models are squares and triangles. The optical concentrator 70 is fabricated from a glass 72. The upper surface 70 is formed into an array of lenses' and the lower surface forms a mirror 71 and a heat sink. By using glass (four) to the air interface 7全 total internal reflection. An electron conducting film such as tin oxide is coated 71, 76 onto the glass surface on the mirror region 77: 8 ’ and coated into the shaped holes 73, 75. The two electrodes 77, 8 are separated from either side of the glass reflector by a gap 79 in the glass reflector 72. At the end of the glass mirror in contact with the two electrodes 71, 76, the semiconductor spheres 74, 78 are inserted into the shaped holes 73. The insulator gap 79 can be formed by molding a channel on the side of the glass mirror 72 and then coating the glass reflector with a directional source of electron conductor material π, which will not fill the masking region of the gap 79. Insulator gap 79 can be formed by molding a channel on the side of the glass mirror, and then with a directional source (its 17 200824134

The masking area of the gap 79 will not be applied to be applied to the glass 72. In operation, light from the sun is focused via lens 7G and reflected by mirrors 71, %, 75, 77, 79, 80 onto photodiode cell π. The higher the concentrated power of the lens and mirrors 71, 76, the greater the accuracy with which the array points to the sun. With low concentration, (about four times) the refractive index of glass 72 sufficiently refracts light from non-vertical rays, allowing the concentrator array to effectively concentrate light from the sun without tracking the sun. Light that is not directly focused to the photodiode 74 (such as scattered light through the cloud) can be reflected on the reflective surfaces 71, 76 and partially reach the photodiode. The concentrated PV array can be fixed, mounted, and tilted to maximize output at noon and latitude. Applications of these types of low concentration concentrator photovoltaic arrays can be used for structural devices and non-sun tracking devices. The micromirrors do not have to be perpendicular to the surface plane, and in some designs, the array can be tilted, and the mirrors' maximize power output and performance when the outer surface needs to be at a defined angle independent of the insolation angle. In Fig. 8, 'the configuration of the photovoltaic cell and the micro (four) towel H when the battery is inserted into a thin flexible substrate is shown. Here, the towel is configured to form a core groove by making a main surface, curing, and then removing from the main surface, and the substrate dielectric film 9〇β of the hole is followed by orientation or surface coating ^, 97, 1〇5 A dielectric replica 90' is applied to coat only the outer surface and edges 96, 102, 104 of the grooves or holes 1〇8. In the case of the hole 1〇8, an electrical gap can be provided by the groove or the overprinted area 1〇3 of the substrate 90. Other possible technologies are screen printing, inkjet printing, plasma spray coating, electroplating, metal b coating 9 96, 97, 102, 1〇4, 1 () 5 (such as silver powder or tin powder), 18 200824134 The straight wire of the electric conductor thin ^ ^ 幻一二 deposition. The electrically conductive coatings 91, %, 97, 102, 104, 105 have φ w θ 士 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The solid conductors of 1〇1, 100, 99, and 98 are cured by contact. A wide variety of textures, pits, pedestals, fibers, ice sinks, slicing and elastic polymorphic surfaces can be molded into replica surface contacts %, 102 1〇4 to help achieve particle photodiode contacts 92, 95, 1 The elastic electrical contact surface of the contact on the 98. The surface top, outer, 97, 1 〇 2, 104, 1 〇 5 may also contain fibers and/or have electrically conductive fibers disposed therein. Another method of forming electrical contacts 91, 96, 97, 1〇2, 1〇4, 1〇5 is to laminate an electrically conductive box, wire, fiber, conductive mesh, conductive fibrous substrate' or powder to the dielectric In the substrate. The τ_ construction step is to coat the back side of the molded dielectric 90 by back reflecting a 1 106 silver, tin or titanium white scattering film. This can be a polyoxic coating containing dioxins. On the outer surface of the back (4) U) 6, a deposition-protective and thermal light-emitting film, such as a polyoxyl oxide carrying carbon black 4 titanium oxide particles that are irradiated with infrared radiation and that remove heat from the backside of the array. coating. The photodiode spheres 100, 93 i having doping 99, 94 and electrical conductor contact points 92, 95, 1 〇 1, % are placed in the slots or holes of the structure. By properly forming the dielectric junction 9 and the electrical contacts 1〇2, 1〇4, the photodiode sphere 1〇〇 will elastically fit into the slot 108 only in the I mode, and only achieve the other light in the array. Proper electrical contact of the pole body 93. By placing the array of photodiodes, the array is placed in a vacuum furnace to anneal the contacts 91, 96, 1〇2, 1〇4, 92, 95, 101, 98, and possibly the contacts Solder in place. In order to protect and assemble the photodiode array into a larger modular system, it is 19 200824134 == such as chlorine gas carbide (required name) material, or coated with an epoxy resin sealant and laminated to Such as the glass flakes shown in Figure l〇A, trace (four), should, =,: Λ. The battery can be positioned and clamped between the glass mirrors where the grooves or grooves are positioned to focus or concentrate the lens mirror assembly as shown in the "edge" of the photodiode sphere

In the liver map, various components can be combined with a micro-concentrator photovoltaic array to form a power system. The heat removal and thermal storage can be combined with the photovoltaic array (4) of the waste heat of the photovoltaic array (4), and the thermal array of the photovoltaic array can be provided. The micro concentrator photovoltaic array is shown in FIG. $ with a cross-sectional surface, and has an anti-reflective coating 117, a molded glass lens 110, an interface inner layer 126, a reflector 112, an elastic lower layer and a dielectric substrate (1), and a heat conducting substrate 114.

Above the degree is pressed together in the interface layer by a glue such as Silgard (No) and the radiation (four) 125 of the photovoltaic array and the components of the back surface. The radiation coating 125 can be textured to have fibers, fins, bumps, ridges or corrugations to increase convective heat transfer. The coating will have a high infrared emissivity, such as titanium dioxide and carbon black or graphite particles in the polymethane rubber coating. Care should be taken to mold the m to have a surface that is easy to keep clean. When the array is assembled between the glass and the array of cells, it is cured at the maximum operating temperature of the array or the maximum operating temperature of the array. The glue 126 will shrink and be subjected to tension at the operating temperature due to the higher coefficient of expansion of the glue 126 of the mirror array 112, ι 3, 125 and glass 11 。. This tension in the interface layer will continue to pull the mirror 112, the dielectric backing n3, and the thermally conductive substrate 114, and maintain 20 200824134

Compression of the contacts to the semiconductor bead 115. Current is collected from the series connection contacts 112 on the 115 beads and delivered to the sides of the array. The electrical output from the photovoltaic array is shown schematically as a positive terminal 116 and a negative terminal lu. The enclosure 120 can be placed on the back of the photodiode array 125. The enclosure 120 can be simple to direct convective airflow through the photovoltaic array 125, or can be a circulating fluid 122 (such as fluorocarbon, alcohol, or water). A typical configuration that minimizes the effects of corrosion on the photovoltaic array 125 is to draw air 122 through the photovoltaic array 125 with fans 121, 123 and to use heated air 122 for structural heating. The fan or pump i2i, 123 can be operated when it is desired to cool the photovoltaic array 125 or to deliver heat to the structure. The ridges or bulges of the PV array (4) are 125 彡 better than the flat PV array from the PV 4 inch array to the flowing fluid! The heater of 22 transfers the coupling. The phase change material 119 can be placed on the back of the array 125 or in the flow (four) 12 Torr to stabilize the temperature and absorb heat and store the heat in the system. The DC electrical output 116 111 can be coupled to an electrical conversion system 118 that optimizes the performance of the photovoltaic array and converts the electrical output to a desired electrical output (such as 11 G volts AC). The capacitor, reversible fuel cell' and/or battery pack can be integrated into the electronic device conversion system to store electrical energy in the vicinity of array 125. Heat pipe systems 12A, 124 can be incorporated into the array 125 month portion to effectively deliver waste heat to the structure. The heat pipes (10), 124 may have a boiling point from the impurities of the working fluid 124, or the dancing wall 120 may form a boiling point of the heat pipe to set the boiling point of the heat pipe only when the array temperature is suitable for being delivered to the structure. Remove the heat. Various coatings 117 (such as the infrared rays of the Chin diode film and 21 200824134)

An ultraviolet absorbing film such as TPX sol TM titanium dioxide coating, κ〇η Corporation ^ 91-115 Miyano Yamauchi-cho, Kishima-gun Saga jurisdiction, 曰本) is applied to the outer surface of the glass to reduce the energy band derived from the semiconductor The amount of heat flux on a photovoltaic cell that is not utilized by infrared solar radiation. The anti-reflective coating 117 may be a material such as titanium dioxide that absorbs ultraviolet light and photocatalyzes the organic material on the outer surface of the glass to keep the surface transparent and reduce the glass 丨 1 光伏 and the photovoltaic array 丨丨丨 5 Possible UV damage of 112, 113, 114, 125. In Figures 10A, 10B, 10C, 10D, 10E, 10F and 10G, various alternative light concentration systems can be coupled to the elastic contact cells. In Fig. 10A, a lens array 13A having an accurate placement of the photodiodes 132 in the resilient contacts 133 is shown. The air gap between the lens arrays provides thermal insulation, which can be used as a glazing or skylight. The electrical contact film can be a transparent tin oxide. The contact disconnection portion is shown between the batteries 134, and

Elastomeric dielectrics are shown, such as polyoxyxene rubber layer 128, and a transparent dielectric substrate 127, such as a flat molded glass sheet. In this configuration, light 131 will pass through lens array 130 to focus on semiconductor 132 without being reflected off mirror electrode 133. This system does not capture light that has not reached focus 132. Thus, if electrical contact #133 is reflective or transparent, then the surface of his lens has a low 129 diffused light that will reflect or pass through the array. The light transmissive optical configuration can be adapted for indoor illumination, such as skylights or windows, where direct sunlight is captured while having a low angle 129 of light with the surface (such as 'early morning and night light, light scattered from the cloud layer, and scattered light from the atmosphere) I missed the light and walked through the room. In this example, the semiconductor contact 22 200824134 piece 133 is shown as a flat substrate 127, but it can be a shaped substrate 127 that helps hold the semiconductor and uses away from the shaped electrode n elastic layer 128, substrate 12 7 , , I The cargo slave i27 is reflected first to concentrate the light to the semiconductor 132. It may be an additional feature that the elastic layer assembly 128 is a scale or a flash body and converts the light absorbed in this layer to be converted into a characteristic emission of a light or scintillator. An example of a scintillator material is ruthenium which is soluble and dispersible into a polymer or rubber (Pfaltz and Bauer, m E (4) ^ Luw--CT 06708). An example of a wall light body is a vulcanization word (zns) activated with a copper or silver dopant. Another example of a phosphor is the conversion of light to yellow light! Lv garnet crystals. The characteristic emits light at all angles, but due to total internal reflection of the elastic sheet of material 128, and reflection from the electrode 127, and reflection within the substrate material 127, the light is transmitted to the photodiode' where the elastic layer m changes angle and thickness . Compared to a disc, the advantage of using a scintillator is that it does not absorb its own characteristic light and lower energy photons, so that the scintillator can be used for the transmissive components 13〇, 1〇9 and lower • energy photons via The optical device is in focus on the elastic layer 128. The scintillation layer due to internal reflection and low characteristic light absorption can effectively concentrate the converted light from the large area or volume of optical components 130, 128 and deliver it to the photodiode 132. Phosphors and diffusers are contemplated for use on non-transmissive components, such as electrode 133, elastomeric layer 228, or substrate 127, and can also be used to redirect unfocused light 129 to photodiode i32. In Fig. 10Bf, the Fresnel or holographic light concentrator 137 is shown as a light collection element. This is an example of a different type of optics that can be used to concentrate light to discrete photodiodes. In this example, a cross-sectional view of the Fener's lens 137 is shown in Figure 23 200824134. Light 136 passes through transparent lens material 137 and is then refracted by the facet of the self-contained lens and focused to semiconductor 138. The optical element 137' can be an image lens that can be refracted by a transparent material 137 <a diffraction pattern in the inner surface (such as a trench) rather than a wide range of incident angles to the photodiode US To concentrate the light to the light diode 138. In this example, the substrate material 139 is a shaped elastic polyimide substrate that holds the contact electrodes 126, (10) of the phosphor diode 138. As in the previous example in FIG. 1A, the elastic substrate I39 may be a scattering surface, a scintillator, or a phosphor, and function as a converter, and a light pipe that is not initially focused to the photodiode 138. . In Fig. 10C, an example of a back reflector and an array of photodiodes on the front face is shown. In this example, incident light passes through the 143 elastic substrate and the electrical conductor. Light 143 is reflected off of aluminum reflector 145 and concentrated onto photodiode 142. The photodiode 142 is held by two transparent electrical contacts 144, 164, such as tin oxide or a thinner network of opaque silver electrical conductors held on the photodiode by an elastomeric substrate material such as fluorocarbon. . A transparent material I62 such as a polyoxyethylene rubber may be placed between the conductive electrode 144 and the mirror 145. A transparent, resilient substrate material 141 (such as a fluorocarbon plastic) is formed to form a resilient clamp around the semiconductor body 142 and also serves as a lens for direct incident light. In Figure 10D, a Cassigranian light concentration system having photodiodes on the back surface is shown. In this configuration, light passes through the clear glass cover sheet, through the air or transparent material cavity 153, reflects off the shaping mirror 147, and performs a second reflection on the shaped mirror mounted on the glass cover sheet. And focus on the light diode 丨 5 〇. 24 200824134

Cassigranian optics have the disadvantage that the second reflector blocks direct light from reaching the semiconductor, but this may be useful if there is a need to shield the photodiode 15G to prevent xenon gamma radiation. The second mirror 147 can incorporate a shielding material. The electrical connection to the pole body 15 () is carried out via the forming of the poly-stone rubber elastic member I (5), and the electrode 15 is assembled on the polyimide substrate 152. The elastic sub-layer i5i maintains the contact pressure on the light body 1 50, even if the entire system undergoes differential expansion of the components 1 u '1 5 1 , 149 mesh. An optically transparent material, such as polyoxo rubber, can be placed between the front surface 146 and the reflector 149. In Fig. 10E, a light concentrated optical device using a gradient index lens is shown. In this configuration, the optical material is an elastic substrate, such as

A hybrid polyoxymethylene rubber and a fluorocarbon polymer which is layered and formed in layers 155, 156, 157, 161 having an increased refractive index to focus light onto the photodiode 160. The light ray refraction 158 leaves the forming layers 155, (9), 157, 16 of the polyoxyethylene rubber to focus on the photodiode 16 〇 ±. The contact electrode (9) is elastically pressed onto the photodiode. The last layer of refractive material is molded to form a compression cavity 161 when the photodiode is pressed into the cavity. The cavity is Μ!"麫 The electrode is designed to make contact with the junction of the photodiode 16 6 。. In the Figure IGF towel, a tilt- or off-axis concentration mechanism is shown. This allows the array to be non-perpendicular to the ray 165 from the sun (because of possible architectural reasons), or to tilt the array relative to the surface geometry of the incident light 165 to exploit chromatic aberrations. The refractive index relative to the spectrum can be used for the tilted fire resistant surface to place different wavelength portions of the spectrum in different photodiodes optimized for the portion of the sunlight. Circulation, φ Μ Μ — angle through 25 200824134 The refractory material causes red light 161, which is refracted at the maximum angle, and then green 172, and finally blue 169 with the lowest light refraction. Thus, the array of photodiodes 170, 168, and 169 can be configured to optimally intercept the spectral spread of light: the red light photodiode 170 in the first column, the green light photodiode 168 in the second column, and the first The blue outer tier of the three columns of photodiodes 169 is in a reflective trench 167 that is coupled to a miniature concentrator glass 166 having a sloped geometry. The photodiode is placed and glued into the shaped elastic cavity in the elastic transparent refractory by a polyoxyxene rubber such as that shown in Figure 3; wherein the electrical contact film is formed to the battery stacks 170, 168 and 169 Side compression contact 167. In Fig. 11, a multilayer light-polar body hemisphere having layers 181, 184 180 having different energy band gaps is shown in cross section. Also shows the spectrum spread and convergence

A partial cut of the focal lens 176. The blue light absorption high energy band gap photodiode layer 180 is the outer layer of the hemispherical photodiode. The green light absorption and intermediate band gap energy photodiode layer 184 is the next layer of the hemisphere. The red light absorbing and lowest energy band gap photodiode 181 is a core hemisphere. The three layers of the semiconductor 181 1 84, 18 〇 and the separated electrodes are shown as examples of possible layered photodiodes of hemispherical geometry. More or less photodiode layers can be used and these photodiodes can be formed by multiple coatings of the central ball 181. Each of the photodiode layers i8i, i84, i8〇 will have an impurity doping or inter-electrode layer that forms the concentration and voltage gradient of the photovoltaic first pole. Adding a hemispherical anti-reflective coating on the outside of the photo-pole body. The dichroic coating 174 may be a gradient index portion material, or may be a two-wavelength thick transparent material coated with a layer of Hunting is reflected by the destructive interference light up to 26 200824134 into anti-reflection. To optimize to the light: polar bodies 181, 184, just the light transmission, the anti-reflective coating 174 can be adjusted to maximize the transmission of red light 178 at the top of the photodiode hemisphere and then optimize the sphere Transmission of light of shorter wavelengths 177, 179 on the sides. Due to the spherical shape and the angle of incidence of the light on the sides of the sphere, the quarter-wave anti-reflective coating 174 of the hook thickness shifts the peak transmission to a longer wavelength. Thus, for a light concentrating system and when the light direction is generally controlled on the photodiode sphere, the best quarter wavelength anti-reflection (four) 174 is thinned on the side of the sphere to compensate for the change in angle of incidence. For this particular life, when the light is spectrally distributed on the photodiode sphere, the quarter-wavelength anti-reflective coating 174 can be even thinned on the side of the sphere to optimize incidence on the sphere. Light transmission on the green and blue light 177 on the equal side. This type of thickness profile change coating can be accomplished by vacuum evaporation of the source and the effect of the angle of incidence on the hemisphere, resulting in a thinner coating. The layered photodiode hemispheres 18 1 , 1 84, 18 〇, 丨 74 are placed behind the focusing optics 176 near the focus of the red light 179. The incident white light 175 is spectrally spread (having chromatic aberration) in which the refractive index varies with the wavelength of the light. Typically, red light 178 via glass has a refractive index that is greater than green 199 and blue 177. The hemispherical photodiodes ι 81, ι 84, 18 〇 are placed behind the focus 179 of the red light of the lens 176, such that they are optimized to the spatial distribution of the colored spectrum in the layered photo-polar body to focus the red light. The 179 is placed outside the photodiode or inside the center red light absorbing photodiode 1 81. Successively, the green light 199 will form a larger point and be more efficiently absorbed into the green light absorbing energy band of the light-pole (due to the longer path length via the tilted light diode layer 184 27 200824134). The 177 dots of blue light will have the largest diameter and are most efficiently absorbed in the external photodiode layer optimized for blue absorption and conversion. The longer wavelength red light 178 will generally be refracted via the glass 176 at an angle higher than the green light 199 and blue light 177. The red light 178 will pass through the blue light diode 180 and the green light diode 184 at a low absorption rate because it is under the excitation band gap of the two photodiodes. This spectral, spatial and angular distribution of light on the layered hemispherical photodiodes 181, 184, 180 will tend to optimize the performance of each of the photodiode cells without the need to physically separate the light II. Polar battery. One of the green 199 and red 178 lights will illuminate the blue 180 and green 184 optimized photodiodes (where the photons of such light are at the bandgap energy of the photodiodes optimized for blue and green light), And partially through and reach the green 184 and red 181 layered photodiode. This layered construction of the layered spherical photodiode can be less expensive than forming a different photovoltaic cell that is then placed together. The electrode contacts in this geometry are shown as attached conductive metal contacts 183, 181. The inner layer contact 182 is attached to the exposed surface of the center of the red light lip body 181 and the outer contact 1 8 3 is attached to the surface of the outer blue diode layer 18 且 and via the anti-reflective coating 174 . An example of the details of the elastic contact geometry of the hemispherical beads so far is shown in Figures 3, 128 and 14. Ideally, the electrical contacts 182, 183 reflect light and do not block light to the photodiode (such as in the example of the spring contact of Figure 14) to achieve this circular spot focus. The mechanical contacts will need to be in contact with the center of the center point contact 182 and will be aligned with the forming mating surface using a polysiloxane ball to allow only proper electrical contact and placement of the layered photodiode in the center. The radial direction of the red light and the blue light on the periphery 28 200824134 Spectral dispersion pattern. It should be noted that the roughening or gradient gradient anti-reflective coating 174 can be advantageously used in this geometry to avoid the spectral and angular selection of the typical quarter-point anti-reflective coating as mentioned earlier. Sex. If a slot pattern of the semiconductor holding cavity is used, the center contact can have a raised button 182 and a dielectric perimeter 185 coating, such as extending over the edges of the green 184 and blue 180 photodiodes to prevent shorting An anti-reflective coating to electrical contacts along the trench. In Fig. 12A, an alternative configuration of the photodiode is formed by grinding the microbead layered photodiodes on both sides. The inner doped layer 274 and the other photodiode 272 can be in close proximity by the two electrical contacts 273, 275 by grinding the beads on both sides. The geometry of such beads having two flat sides instead of a single flat side can also be advantageously used for electrical contact. As an example of a layered photodiode, InP beads 274 having a diameter of five hundred microns are formed. The InP bead 274 is doped as an n-type semiconductor. Next, the 1 Ρ bead is coated with an n-type InGaAs layer 272 of about two micrometers thick by a metal organic vapor phase φ crystal. Next, a two-micron thick p-type InGaAs layer 271 and a sputter deposited gold-chromium coating 270 were applied. Next, the beads are ground on both sides and the electrical contacts are formed by vacuum deposition or by plating the nickel/gold contacts 272, 275 to the center. There are many variations in materials to produce a layered photodiode or light emitter. Other suitable substrate bead semiconductors are Ge, Si, SiC, GaAs, GaP, Ga, GaN, CdTe, AlGaP, AlGaP, AlGaAs, CuInSe2, Cu(InGa)Se2, GaSb, InAs, CuInSe2, Cu(InGa)Se2, CuInS, GaAs, InGaP, AlGaP and CdTe. 29 200824134 In Figure 12B, a slot or cavity electrical contact to the photodiode bead having edges 281, 292 and center contacts 286, 287 is shown. In this example, the photodiode beads constructed by grinding the sides of the layered photodiode bead as shown in FIG. 12A are inserted into have two side contacts 2 80, 287 and a back contact. In the elastic groove 295 in the dielectric 288 of the piece 289. A groove or cavity 295 is molded from an elastomeric dielectric 288 such as a polyimide or polyoxyxene rubber on top of a metal foil substrate 289, such as tin. The photodiode beads 281, 282, 283, 284, 290, 291, 292 are pressed into the grooves 295. The two side contacts 280, 287 are pressed against the center contacts 286, 285 of the photodiode beads. The edge conductors 281, 292 of the photodiode bead are in contact with the foil contact 289 at the bottom of the slot or cavity 295 under elastic compression from a cover lens 293 or mirror that presses the photodiode beads against the back contact. . The molded cover glass 293 is held by tension and sealed to the contact electrodes 28A, 287 via a Silguard® transparent interface adhesive 294 which cures at a high temperature under the compression φ pressure between the glass 293 and the electrode substrates 288, 289. . At a lower operating temperature than the cure of the glue, the heat shrinkage of the interface adhesive 294 creates a tension in the glue which pulls the cover glass and the electrodes toward each other and forms a contact compression pressure. Other mechanical resilience, gravity or force mechanisms can be used to maintain the elastic contact pressure on the photodiodes 28 282, 283, 284, 290, 291, 292. In Figure 13A, a semiconductor bead alignment and regulation system is shown. In the system, the semiconductor beads 1 having a flat side 189 are vibrated by the sound 186 from the sound generator 185 or by vibration of the support plate 190. The bead 188 will spin until it reaches the lowest energy, and the flat side of the Jt bead 30 200824134 is placed on the surface of the flat Teflon 187 while gravity forces the beads to be fixed. The different intensities of the acoustic vibrations 186 can be used to condition the beads to move them to the surface, or to gently rotate and rest at the lowest energy state, with the flat sides of the beads 189 on the Teflon surface 187. The Teflon 187 has a static charge to attract the beads 188 and substantially increase the energy such that the flat sides 189 of the beads are placed on the flat Teflon surface 187. The high voltage electrode can be placed on the surface of the Teflon 187, and a high voltage is applied from the generator 191 to the electric φ pole I90. An acute point corona discharge to the conductive surface of the semiconductor bead 188 or adjacent electrode 193 or surrounding ground 192 can complete the charging and electric field lines to the charge electrode 19A. The induced electric field and the charge on the semiconductor bead 188 hold the beads 188 against the Teflon surface 187. As shown in Fig. 13B, due to the low sliding friction coefficient of the Teflon surface 2〇4, the bead 2〇1 (where the flat side of the bead is aligned to the surface) can be made on the Teflon surface by pushing the rod 2(10). 4 slides over without scrolling. The pusher rod 2 can push the semiconductor 201 to align the semiconductors in a row while all of the flat sides of the flat φ abut against the Teflon surface 204 on the support plate 205. The pusher can have shaped cavities 202, 203 to hold the individual semiconductors in discrete locations. If the semiconductor has an erroneous position or there are too many semiconductors for forming a single column, the beads will not fit into the shaped cavity 2〇3 of the pusher 2〇〇 and may be mated to the slot 202 that has been mated to the push rod. Or the beads 201 in the holes 203 are separated and ejected, brought away with the surface of the polyoxymethylene rubber, or swept out of the Teflon surface 204 and the push rod 2〇〇. A cross-sectional view of the push rod 216 for pressing the semiconductor beads 213 into the forming mirror or electrical contact and the resilient substrate 210 is shown in Figure 13c. When the 31 200824134 bead 213 slides into the forming cavity 212 electrical contacts 2n, 2i9, the charge on the support plate 218 can be released or reversed. The pusher 216 can also be heated and/or can apply a sound pulse therethrough to solder, or weld the bead 2丨3 contact 214 to the electrical contacts 211, 219 (once it is inserted and by the electrical contact holder 210) Clamped). The beads may be heated by light or a magnetic field (once: , , and two are inserted into the holder) to achieve soldering or welding of the contacts 2 14, 220. The semiconductor beads may have electrical contacts 214, 220 made of a magnetic material such as nickel. Thus, alignment into the magnetic attraction or magnetic field of the magnetized surface 2 can be used to align and hold the beads on the holders 218, 217. Another property that can be used to align the beads is to use a bead 213 t self-polarizing electric field in the electric field to align the beads 213. It should be noted that the viscous and electrostatic properties of the polyoxo rubber coated surface 215 can be used as a bead holder so that the beads can be held without rolling and transferring. The insertion of the semiconductor bead can be performed, the opening of the elastic (four) 21 ^, the aperture 212 electrical contacts 211, 219 remain open for insertion, and then released to mechanically clamp the bead 213 and make the arcuate bead contact a " electrical contact to the arcuate electrical contact 211, and the inner bead contact 22 〇 contacts the flat surface contact 219 of the resilient retainer 210. Mechanical clamping of the retainer 21A also allows the bead 213 to be retained such that the pusher 216 can be separated from the bead 213 and retract the pusher 216. The pusher 216 can have a polyoxygen viscous surface 215 inside the forming surface 222 to allow the aligned beads to adhere to the cavity and the misaligned beads can be shaken. Figure 14. The lens mirror electrode compression configuration is shown in cross-sectional view. Another configuration for connecting the spherical grounded semiconductor photodiode or ground rod 233 is to form a cavity having mirror contacts 237, 238, 242, which: 32 200824134 The mirror contacts will only allow the battery to be connected in one orientation. The shaped recesses or recesses 239, 241 have a central contact 242 and side contacts 239, 238 (as shown in Figure 14). This can be formed by ink jet coating an electrically conductive powdered ink such as silver, copper, nickel, graphite, indium, tin, and alloy onto a dielectric substrate such as molded or formed polyimine 239, 241. The contacts 237, 238, 242 and the channel 243. Other methods of forming electrical contacts and circuit films 237, 242, 238, 243 are to deposit electrically conductive film deposits, plasma spray, electroplating, tanks onto preformed (flat sheets) or shaped dielectric substrates 239, 241 on. Other options are to coat or laminate a thin metal substrate in the form of a holding contact and as another protective back surface 244. The side contacts 237, 238 have a flat bottom of self-electrical contacts a?, 2 columns and dielectric backing wires 239, 241 deposited upwardly to a portion of the ''$' of soil layer 23 5, 236' to make the hemispherical beads 233 Do not touch the side: pole 237 238 electrical contact (if the circular surface of the bead 233 is touching the central electrical contact). The dielectric coatings 235, 236 (such as Teflon j polymer) may have a low coefficient of friction 'to allow the hemispherical beads 233 to slip and spin easily, straight to the main track ^ 疋罝] + conductor light dipole The flat side of the body bead 233 = = groove or recess 239, the bottom of the flat surface. - The pine needle is pulled toward the groove or the bottom of the recess 1 239, 241, and as the bead fits deepest into the groove or the concave side is parallel to the bottom), the bead will be flat to the far 3 or the sound r - ^ Take a low energy state. If the vibration energy = two (four) is applied to the hemispherical beads, the beads can be rotated and spined, and the thousand cross-section fits against the grooves or recesses 239, Μ4. This gravitational effect can be enhanced if an electric field is imposed on the electrodes 239, 242, 238 and the external electricity not shown = 33 200824134. Dielectric film Μ9, 234, 236 are typically permanent electrets or can be polarized and charged with an imposed electric field. The center contact 240 is formed on the hemispherical bead (3) with a ferromagnetic material such as nickel, and the center contact 242 is fabricated from a ferromagnetic material such as iron or magnet, and then the contacts 242, 24 are magnetized. Or placed in a magnetic field, the beads will be preferentially oriented in the magnetic field and will be directed and concentrated by the central contacts 24, 242. This will increase the alignment of the beads with the flat surface of the bead (3) which is parallel to the grooves or recesses 239, 241 of the mirror contacts 238, 237. When the beads are properly aligned, the side electrode surfaces 237, 238 are in contact with the sides of the hemispherical beads 233. Typically, the photodiode semiconductor bead 233 is doped to have a positive charge carrier doping on the inside and a negative charge carrier doping on the outside. Thereby, the electrical contacts on the flat surface of the bead contact 242 with the p inner layer and the outer surface contacts 237, 238 are in contact with the N layer. Due to the difference in friction coefficient between the side contacts 237, 238 of the beads 233 having the dielectric coatings 235, 236 and the side contacts such as 曰 238, the beads 233 will tend to adhere to the recesses (10), (4) (- Into the metal contact). The shape and elasticity of the groove or recess (10)m can be formed such that it forms a wedge contact 237, 238 on either side of the bead to hold the bead (for correct alignment) The quasi-process occurs at elevated temperatures, near which the 'beads' 237, 238 will be soldered or adhered to the outer surface of #233, and the side contacts are also adhered to the beads and the beads are held (--parallel surface alignment and electrical contact). Other possible holding mechanism ^ Dielectric separator in the bottom of the concave or concave zone 239, 2 升升耀, poly 34 200824134 石夕氧橡胶, or viscous Smaller droplets of liquid, such that when aligned with the flat surface of the bead, the surface tension month b1 is reduced by contact with the flattened surface of the bead 233. This will act as a bead holder and will be fully loaded. Remove the excess surface or the misaligned j矣9 u '' 233, the assembly can be flipped and gravity pulled out of the beads 233 that are not held in place. Other options are = Forming tool surface coating (such as polyethylene oxide Xi stone rubber), such that ^

The forming tool descends on the surface of the array and touches it. In the incorrect position, the bead 233 needle is only mechanically connected to the beaded bead. The bead 233 will be aligned with the surface of the bead 233 in the groove or recessed area. The hunting is performed by visual inspection or has a precision: a process for inspecting the alignment of all the beads 233, the precision tool having a vacuum or viscous surface that fits into the groove or recess, and Only the contacts and the batteries that are not properly fitted into the grooves or recesses m 21 are contacted and removed. Once the flat surface of the material 233 is aligned to the flat surface of the recess or recess 239, 241, 237, 238, the semiconductor beads 233 can be heated by thermal mechanical contact with the flash or bead 233 to confirm 239, 240. , 242, Gans & 238, wherein the metal body is heated to cause the beads 233 to touch the (four) pieces 237, 242 '241. Other possible methods of delivering energy for welding, brazing or refining contact are to apply ultrasonic sonic energy pulses to semiconductor S 233 and contacts 237, W, 238 to frictionally weld or weld the contacts. Electrical pulses through the circuit and the cells 237, 238, 233, 24A, 242 can also be used to form an arc fusion to the electrical contacts of the semiconductor photodiode bead 233. Another method of soldering, brazing, annealing or soldering the electrical contacts is to use the self-generated electrical pulse 35 from the semiconductor photodiode 233 to illuminate (if the circuits 237, 238, 233, 240, 242 are shorted, attached to a power source or charged) Capacitor), and then raster scans the beam of laser light on the battery, or approaches the battery to ignite the flash. A short electrical pulse is formed to provide a short thermal energy pulse at the mechanical contact to the fusion, brazing, annealing or soldering contact. The central contact or side contact metal film on top of the dielectric substrate 241 can be used as an electrical fuse that melts and vaporizes the metal 242, 23 7, 23, 243 and the extended underlying dielectric 239 , 241, to disconnect the local circuit (if excessive current flows through the circuit). This can be used to disconnect a battery that may be incorrectly connected or shorted. Alternatively, the contact securing step may be performed after the assembly of the refractory lens and the mirror 231 is placed on the battery and the refractory lens and the mirror 231 hold the batteries in place. The fire resistant overlay lens and mirror 231 can be pressed against the semiconductor beads 233 for electrical contact and maintain electrical contact over the life of the solar array. The refractory cover layer 231 can be pressed and held by the glue 232, and the elastic tension in the electrical contact material 237^3123124^242 and the refractory material disposed on the semiconductor 233 in contact with the contact material 237, 242, 238 Gravity maintains contact over the life of the array. The lens-mirror assembly sheet 231 can have a protective or anti-reflective coating 23 on the outer surface. Suitable films are fluorocarbon (Mihama), titanium dioxide coatings for the manufacture of external surface photoreactive and self-cleaning or hard anti-wear coatings (such as reactive fresh diamond films). For example, optically clear adhesive or coupling gels 234, 232 (such as D〇w c〇rning Sylgard@184 or spinner Q3-6575) are dispersed by high pressure extrusion on a battery. A glass or transparent dielectric cover lens-mirror 231 is placed on the optical bonding materials 234, 232, and the optical coupling materials 234, 232 are pressed against the semiconductor and the mirror by rolling motion 36200824134. Second, the gas passage in the type of glue pushes the bubble out of the assembly. The entire assembly can be cured by high temperatures. The assembly can be cured under compression to press the lens mirror sheet 231 against the semiconductor beads 233 and maintain compression on the electrical contacts 237, 240, 242, 238. The shrinkage of the glue or optical coupling material 234, 232 after or during the curing process can further increase the compression of the bead 233 and the contacts 237, 24, 242, 238 during and after the curing process. On the back side of the dielectric substrate up and metal contacts 242, a heat transfer and protective coating 244 (such as a carbon black-doped or TiO 2 polyoxyxide coating) is applied. The assembled system can be tested and the shorted or reversed cells can be removed from the array and series by melting or vaporizing the electrical contacts using light pulses, raster scanned laser beams or electrical pulses. Electrical connection to external electrical systems and circuitry is contemplated via electrical contact pads at the edges of the sheet of glass material 231. Figure 15 shows a circuit of a series-parallel battery having thin film electrical conductor dielectrics, fuses or varistors 253, 258 in parallel and series connections between photovoltaic cells 253, and reflow protection built into the output. Pole body 254 or varistor 254. As in the schematic diagram! As indicated at 5, the countercurrent protection assembly 254 can also be placed by the same method of placing the doped semiconductor beads in the elastically shaped electrical contacts with a reverse electron hole gradient to the photodiode. The counter current guard diode 254 is not illuminated and can therefore be placed outside of the concentrated area of light between the edges of the mirror array or array. The counter current protection diodes 254 can be periodically placed as a column in the array to match the voltage and current characteristics of the protection diodes, and form a distributed reverse flow protection system. The protection against any single protection diodes or Protecting the string of diodes harms the entire system. The blade loss effect of a single cell that becomes open in several parallel connected cells is divided by the number of cells connected together. The series-parallel connection, the single point of failure in the 'cluster' is a single point of failure effect on the entire system proportional to the number of losses in the column divided by the number of columns, since current from other columns will be able to flow around a single point of failure . The number of random cell failures is proportional to the total number of pen pools in the circuit. Therefore, in a larger array of parallel-connected cells at equipotential and series connections (where the number of cells in any single column is proportional to the square root of the total number of cells in the array), the possibility of a random single open fault is derived. Part of the loss is proportional to the inverse square root of the total number of cells in the array. This statistical observation has a practical implication: for a series-parallel array, the higher the number of individual cells in the array, the lower the partial loss due to random battery failure. The higher the number of batteries, the more reliable these photovoltaic arrays become, contrary to the typical intuition: the more batteries in the circuit, the greater the chance of failure and output loss. In the high voltage array, the reverse current protection battery 254 and the bypass diode 257 can be periodically formed in columns in the array. A parallel electrical connection 253 between the cells is useful where the current bypass bypasses a single cell in the array that may be inefficient due to manufacturing defects or being obscured. The bypass diode 257 can direct current around the battery 252, which has low performance or is shielded. An effective fuse can be formed by parallel connection 253 and series 258 electrical connections by thinner conductive deposits deposited on a dielectric insulator substrate or varistor, wherein the selected electrical conductor semiconductor has an increase in current, voltage or temperature. Increased specific electrical impedance. Specific examples · The film of zinc oxide will be applied with the voltage 38 200824134 θ 4 Θ and other deposits can be vacuum sputtering deposits similar to photodiode bead wires, inkjet deposits, electric (four) coating deposits (4) Printing, individual sediments. Most metals have the desirable properties of lowering the electrical resistance at ambient temperature and then increasing the resistance by increasing the Ik/dish. If an excess of electricity (such as several times the current of a single pole) flows through the parallel or slaughter electrical connection, the metal will be entangled due to ohmic energy dispersion and material. If the heat generated by the electrical power is sufficiently high, the circuit will dissolve the metal and (possibly) the two electrical substrates and permanently disconnect the parallel circuit connections. An open circuit between the batteries 253 can be used to permanently disconnect the circuit surrounding the individual photocells 252 (if the cells are shunted or reversed). It may be in a parallel circuit connection (4) such as a varistor 253 <device, designed to have an increased resistance as current increases. The varistor p and 253 can be designed to reversibly respond quickly to excess current and effectively clamp the maximum current in the parallel or series connection. This maximum current clamp can be very important to protect the photodiode from over-current peaches and voltages in selectively illuminating the photovoltaic material (such as from the concealer). This array, shown schematically, can be connected 25(), a% to other arrays or electrical loads via peripheral busbar connections 251, 255. Other possible electrical equipment are Dc to dc converters, DC-AC converters, capacitors, battery packs, electrolytic cells, flywheels, motors, lamps, pumps and fans. These electrical devices can also be electrically connected to output cables or busbars. Connection lines 250, 256 are integrated with the array as shown in FIG. The present invention has been described with reference to the specific embodiments thereof, and modifications and variations of the present invention may be constructed without departing from the scope of the invention. 39 200824134 The main agricultural levy element: The 妾 contact maintains the compression of the semiconductor body by the elastic mechanical system. The shape or electrode of the body of the light is used to orient the semiconductor. 3. Use a slot or hole to fit the battery. 4. Use the flat side of the ball to hold m to move to the electrical connection. 5. The slot is also electrically connected. The 6·slot is also a mirror. 7. Also light transmissive. 8) The position and the rule of the t-contact on the sphere can be advantageous for semiconductor operation. The electrical contacts have the thickness of the electrical properties of the fuse and circuit interruption. 10. The electrical contact can be a mirror. 11 · Electrical contacts can be transparent. 12. The electrical contacts can be different electrical conductors or metals. • u. Electrical contacts and semiconductors can form substantially thermoelectric junctions. 14. The electrical contacts and the semiconductor can form a light generating junction. 1 5 · The tank and electrical contacts form a heat removal system. 16. The electrical contacts and/or mirrors are heat conductors' to remove heat from the photodiode. The coating on the back side of the array enhances radiation emission and heat removal. 18 · The mirror/lens is a heat removal system. 19. The mirror/lens is a mechanical mount and protection system. 20. Use and connect in series to provide a reliable circuit connection. 200824134 21·Glue can be used. 22. An optical interface bridge or glue can be used. 23. A photocurable adhesive can be used. 24. Sticky materials can be used to secure the battery in the tank. 2 5 · The sphere can be compressed into the groove for contact. 26· Welding can be used to complete the contacts. 27· Welding can be used to achieve electrical contact fixing. 28. A flash can be used to secure the electrical contacts (where the light diodes generate current to refine and/or thermally heat the battery). 29. Ultrasonic energy can be used to complete welding or welding. 30. The optics can be coated with a film as a reflector or circuit. 31. The beads are in the grooves or holes with two or more different contacts on either side. 3 2 · It is not necessary to use the shape (only before it enters the slot).

"33. Array $ Lens / Mirror Separation Conductor Traction Electrical Contact and Assembly of Back Cover or Mirror Assembly. 3 4 · Slots or holes may be formed in the dielectric. 35. Available in dielectric Forming grooves or holes in the metal of the coating. Structures that form grooves or contacts in metals with dielectric and electronically conductive coatings. Grooves, bumps, pedestals, for electrical contact elasticity. The wall of the shaped cavity may have an improved electrical connection. 3. The wall of the shaped cavity has a flow channel, a slit, and a fiber for electrical contact. 39. The electrocoat on the cavity contact surface has 200824134 fiber, powder. 40. The contact on the shaped cavity is an elastic polycrystalline surface. 41. The coating can be deposited or formed in a number of ways. Vacuum deposition, inkjet printing, powder coating, screen printing, foil imprinting, welding, stamping Or pressure 42. Use of polyoxynized rubber 43. Use of HFCs 44. Use glass, aluminum, silver, tin, antimony tin, steel, steel, alloy, bismuth sphere, Sphelar® crucible, with electrical contact on it Sphere, solder paste, _ loading of charcoal, TiO2, photocatalysis , or a white coating. 45 • Use a photocatalyst on the outer surface of the glass or refractive index material to impregnate, clear,/twist the external surface, and block high frequency light from reaching the photodiode. 46. Use the masking of the trench to preferentially locate the deposition. Self-masking of the object or circuit 47. The electrical connection line and the substrate can form a light collecting system to the photodiode. 48. The optical diode array can be coupled to the optical focusing optical device. 4 9 · Electrical connection system can also For optical components. 50. Back protector sheets can also be used on optical light concentrators. 5 1 · Light scattering can also be used in optical devices. 52. Light flashing or conversion can be used. 53. Electrical contact semiconductor rods and The clamping groove is also used as an effective photovoltaic cell. 54. Built-in countercurrent protection 55. Conversion to battery pack inverter and electric power grid 56. For solar tracking system 57. Use spectral splitting or filtering. 200824134 5 8 _The smoke pipe or fluid flow channel can be placed on the back of the array and the flow of fluid or air can be used to cool the photodiode array. 59. The phase change material can be thermally coupled to the back of the photodiode array. To suck And storing heat from the photovoltaic array. 60. Attachable electronics to regulate the electrical output of the photovoltaic array. 61. The battery pack can be attached to a photovoltaic array to store electrical energy. The elastic layer is used underneath to ensure electrical contact and as a thermal expansion and contraction compensator. 63. Attach the PV array to the sun alignment or tracking system. 64. The device is flexible and can be opened to accept the semiconductor and shut down. 65. Use electrostatic components to move and hold the semiconductor 66. Use magnetic components to move and hold the semiconductor 67. Use gravity to move and hold the semiconductor 68. Use a sticky surface to hold the semiconductor. 69. A viscous surface is used to hold the semiconductor at the bottom of the recess. 7 Use a smooth surface to allow non-rolling contact movement of the semiconductor. Gravity can be used to press the glass cover and lens mirror into the cell and electrode to maintain compression of the semiconductor and contact phase. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1: Slot in dielectric material Figure 2 Cross-sectional view of shaped contact groove or hole Figure 3: Cross-section of shaped contact groove or hole holding a spherical photodiode 43 200824134 Figure 4: With Hemispherical shaped hole holding a flat side of a spherical photodiode Figure 5 Example of a system on a glass molded lens/mirror optic Figure 6: Array of back reflector battery attachment pattern Figure 7: Spherical optics diagram 8 · g electrical wiring when the sphere is packaged into a film array Figure 9: folded sheet sandwiched between the lens / mirror Figure 10A: lens and back focus plane system Figure 10B: Fresnel lens and back focus plane system diagram 10C: Single Parabola and Front Surface Concentrated Planar System Figure l〇D: Cassigranian Optics and Back Concentrated Surface Plane Figure 10E: Exponential Refractive Gradient Concentration Lens (GRIN Lens) and Back Set

Medium system. N Figure 1 OF · · Spectral spread red _ green and tilt optical system.

Note: It should be noted and possibly stated that the grating and holographic spectral spread can also be used in this tilted optical configuration. Figure Π ·The chromatic aberration coupled to the hemispherical layered photodiode stack Figure 12 A · Both sides of the grounded layered spherical photodiode stack. To the side Figure 12B: A diagram showing the side and edge contact fixtures for grounded batteries or single-sided grounded batteries on both sides. Figure 13A: Aligned asymmetric hemispheres on a low coefficient of friction surface. Figure 13B: Pusher and aligned hemisphere on low friction coefficient surface Figure 13C: 44 200824134 pusher for injecting an aligned hemisphere into an electrical contact fixture. Figure 14: Cross-sectional view of the center flat flat contact and side contact of the photodiode in the shaped lens mirror circuit fixture. Figure 1 5: Schematic diagram of the equivalent circuit of the PV array [Main component symbol description] 1 : Dielectric material 2 ··Slot 0 3 : Flat side / Flat part 4 : Curved side 1〇: Electronic conductor on the external surface / Conductive film 11 : dielectric substrate / dielectric 12 : first electronic conductor coating / electrically conductive film / flat electrode surface / contact point 13 on the flat portion: groove / hole 14 · curved space in the groove Second electronic conductor/electrically conductive film on the side _ / contact point / curved electrode surface 15 · electronic conductor / electrically conductive film on the outer flat part of the material 16 : bottom of the shaped hole / gap 1 7 : elastic substrate film / Elastic film 19: Sublayer 20 · First external electrical conductor / electrode / electrical connection / electrode heat sink 21 · Dielectric substrate / substrate material 22: First electrical conductor / electrode 23 in the groove · Internal doping region of the sphere Contact / Bead / Electrical Contact / Electrode 45 200824134 Contact Point / Semiconductor Bead Contact 24 · External Change Layer / Semiconductor Bead / p / N Junction Doped Layer / Semiconductor Junction / Semiconductor / N Layer 25 · Doped inner portion of sphere/semiconductor bead/p/N junction doped layer / semiconductor junction/semiconductor /Internal/P material 26 ·Electrical contacts/beads/electrode contacts/semiconductor bead contacts on the outer doped area on the sphere • 27 • Electrical contacts/film contactors/electrodes 28 on the outer curved section of the groove • Electrical contacts/electrodes/electrical connections on the outer surface of the dielectric substrate/electrode heat sink 29 • Anti-reflective coating of spherical semiconductors/beads 3 G • Groove or polyoxynitride coated bottom 31: grooves or Hole 33: flat side of the groove _ 34: sub-layer 35: conductor coating 36: conductor coating on the flat point of the hole / electrical connection line / flat surface 37: hole 38 in the dielectric substrate: electrical cut-off part / Electrical/Electrical Cut-Off Area 39: Electrical Conductor on External Surface 4 Π » υ • Electrical Connector Conductor on Rounded Side of Hole / Round Side 49: Transparent Dielectric Sealant/Slot 5〇: Transparent Lens/Mirror Optics / Mirror / Formed Glass Breaker 46 200824134 5 1 : Electrical Conductor / Electrical Contact / Electrode 52 at Mirror Position: Semiconductor / Semiconductor Sphere / Semiconductor Bead 53 : Second Contact / Electrical Contact on Semiconductor /electrode 54: electrical conductor and external series array contact / electrical contact / electrode / circuit 55: on the opposite side Electrical Conductor / Electrical Contact / Electrode / Circuitry 56 on Contact: Protective Backing Plate / Heat Sink 57 : Dielectric Sealant 5 8 : Anti-Reflective Coating and Glass Protectant / Front Surface 59: Dielectric Sealant / Dielectric film/dielectric material 60: Refractor material/glass sheet 61: Upper lens 62: Lower mirror 63: Photodiode cover/groove 64: External electrical conductor/Electrically conductive film/Electrically conductive coating 65: Semiconductor /矽Semiconductor Photodiode/矽Semiconductor Bead/Battery 66: Dielectric Substrate/Back Surface/Glass 67: Back Sheet or Coating May Be Reflector or Scatter/Sheet/External Surface Coating/Reflective Coating 68: Back Coating reflector or diffuser / black radiator coating 69: forming groove / gap 70 · cross section at the upper lens / lens / optical concentrator / upper surface / empty intermediate surface 47 134 electrical contact state and cross section of the mirror Cross section/mirror/electrode/reflective surface cross section of moon-transparent material/glass/glass reflector/glass mirror to semiconductor sphere electrical contact/formed hole semiconductor sphere/photodiode battery to spherical arc-side electrical contact Cross section of several electrical contacts of a piece/formed hole to a sphere / Reflective surface / electrostrictive

77·Electrical contact 彳 coating/mirror area/electronic conductor material/mirror 78^Semiconductor sphere/photodiode battery with ρν junction and electrical contact 79: Electrically cut-off part/gap/mirror 80: 苐二Electrical contact / mirror area / electrode / electronic conductor material / mirror 81: hexagonal separation between batteries / hexagonal pattern 8 5 · polysecond oxygen rubber sealant -

72 73 74 75 76 90: Molded dielectric substrate/substrate dielectric diaphragm/dielectric replica 91: Conductive film/electrically conductive coating/replica surface/contact 92 • Electrical contacts on flat sides and internal materials /Semiconductor photodiode/particle photodiode contact 93: Internal doped semiconductor/semiconductor photodiode 94: external doped layer/semiconductor photodiode 95: contact on the external doped surface / semiconductor photodiode / Particulate photodiode contact 48 200824134 96 : Curved side contact / electrically conductive coating / replica surface contact / replica surface 97 · Contact electrode / electrically conductive coating / replica surface 98 : will not fit the sharp square on the hole Side reverse semiconductor/semiconductor photodiode/particle photodiode contact 99: external surface doping layer/semiconductor photodiode 1〇〇: internal doped layer/semiconductor photodiode 1〇1 · flat side electrical contact /Semiconductor photodiode/particulate photodiode contact 1〇2: flat side contact/electrically conductive coating/replica surface contact/replica surface 1 〇3 • Trench or embossed area 104: curved side electrical contact Piece/electrically conductive coating/replica surface contact / replica surface 105: electrostatically conductive film / electrically conductive coating / replica surface 106 · back reflector or diffuser with blackened outer surface I 07 · blackened external surface / protective and thermal radiation film 108 : molding Slot or hole: Air gap / optical component II 〇 · Formed transparent lens and mirror / molded glass lens III : Electrical connection tab / negative end 112 · Electronically conductive coating / mirror array / reflector 113 : Dielectric Substrate/mirror array/dielectric backing 1 1 4 · Back metal plate/mirror array 49 200824134 115 · Semiconductor sphere/semiconductor bead 116. Electrical wheel connection cable / positive end 117 anti-reflective coating or Ti〇2 and / or anti-scratch or anti-wear or other | ^ concentrating mechanism or ultraviolet filter 118 · electronic device or battery / electric conversion system 11 9 · thermal phase change material 120 · insulated container or box / enclosure / Heat pipe system / elastic wall 121 · Fan motor or actuator / fan 12 2 · Air flow / flowing fluid 123 : Fan or valve 124 : Heat pipe or thermal cycle system / working fluid 125 · Blackened back surface / mirror array / photovoltaic Array/Photodiode Array 126: Optical Coupling and Sealing Material/contact electrode/second electrode and photo reflector 127: dielectric substrate layer/electrode/substrate material/substrate 128: elastic layer/optical component 129: light ray 130 having a low angle to the lens surface: lens/optical component 13 1 : Light ray / light 132 : Photodiode / Semiconductor / Focus 133 : Photodiode substrate surface and electrode / electrical contact 134 : Electrically cut off part / Battery 136 : Light ray / light 50 200824134 137: Fresnel lens / Optical Element/Transparent Lens Material 138 ·•Photodiode/Semiconductor 139: Dielectric Substrate/Substrate Material 140 ·First Electrical Contact and Reflector/Contact Electrode 141: Transparent Dielectric Window/Transparent Elastic Substrate Material 142: Photodiode Body/semiconductor body 143: light ray/light

144: electrical contact/conducting electrode 145: parabolic reflector/aluminum reflector 146 · transparent window / transparent glass cover sheet 147 · second reflector / shaping mirror 14 8 : light ray 149: first reflector / forming Aluminum Mirror Contact/Component 150: Light Diode 15 1 : Electrical Conductor / Assembly / Elastic Sublayer 1 5 2 · Dielectric Substrate / Assembly 153 · Air or Transparent Medium / Air or Transparent Material Cavity 155: High Refraction Forming layer/refractive index layer/polygala oxide forming layer 156:: a highest refractive index layer/refractive index layer/polymoxy rubber forming 157: Γ highest refractive index layer / refractive index layer / (iv) oxy rubber Forming 1 5 8 : Light ray 159 · Electrical conductor / contact electrode 51 200824134 160 : Light diode 161 : Minimum refractive index / refractive index layer / Polyoxyethylene rubber forming layer / Compression cavity 162: Air or transparent medium / transparent Material 164: transparent electrode / transparent electrical contact 165: light ray 166: refractive index material with high chromatic aberration (or interference grating) / micro concentrator glass

167: Electrical contact and reflector/reflecting groove 16 8 : Green diode 169 : Blue diode 170 : Red diode 1 7 1 : Red light 172 : Green light 173 : Blue light 174 : Anti Reflective coating/layered photodiode hemisphere 175: light ray 176: lens 177: blue ray 178: red ray 179: red light focus 180: blue light point or region/light diode on blue light diode layer / Layered photodiode hemisphere/layered hemispherical photodiode 181: red photodiode layer/photodiode/layered photodiode hemisphere 52 200824134 Body/conducting metal contact/layered hemisphere Light diode 182: central electrical contact 1 83 : outer layer contact / conductive metal contact 184: green light absorbing layer / light diode / layered light diode hemisphere / layered hemispherical light diode 185 : Sound source 186 : Sound wave 187 : Teflon surface 188 : Shaped semiconductor beads 189 : Flat side of the bead 190 · · Back surface / electrode 191 : High voltage source / generator 192 : Electrical ground 193 : Push plate or grid Upper Ground Surface/Electrode 199: Green Photon 200: Pusher/Pusher 201: Aligned Sphere/Bead 202 on the Plate: Forming groove/forming cavity/groove 203 on the plate: hemispherical forming recess/formed cavity/hole 204 on the push plate: Teflon surface dielectric 205: metal plate/support plate 210: dielectric substrate holder / Elastomeric Substrate 211 : Electrical Contact and Mirror 212 : Forming Cavity / Forming Opening 53 200824134 213 : Asymmetric Photodiode Bead 2 14 : Electrical Contact 215 : Polyoxygenated Rubber Contact at the Bottom of the Forming Pusher Surface liner 216: push plate/pusher 2 1 7 : Teflon film 21 8 : back plate 219: second electrode/electrical contact 220 on the dielectric forming substrate and mirror. On the flat side of the bead Second contact/internal bead contact 221: flat side of the bead 222 • Formed cavity 230 on the push plate: external transparent anti-reflective and protective coating 231: refractory dielectric material lens _ mirror 232 · / Electro-optical transparent germanium or optical facing material 23 3 : semiconductor photodiode 234 : optically clear adhesive or optical coupling material 23 5 : dielectric coating which can have a low coefficient of friction 23 6 ·· can have a low coefficient of friction Electrocoat 237: edge contact electrode / contact / electrical contact material 238: edge contact / Contact / Electrical Contact Material 239: Back Dielectric Substrate and Electrical Contact Separator / Polyimide / Electrical Contact Material 240 : Center Electrical Conduction Center Contact / Bead 54 200824134 241 : Back Dielectric Substrate / Poly Imine/electrical contact material 242: electrical contact to the photodiode center contact and circuit/electrical contact material 243: electrical connection between the photodiode center contact and the edge contact of the adjacent photodiode Line/Channel 244: Radiative Heat Transfer and Protective Coating 250: Output Connection Operational Positive/Connector 251: Busbar Electrical Connection Wire 252: Light Diode/Battery 253: Dielectric Insulator Thermistor or Varistor Thin wire or metal film 254 on the reverse: reverse current check diode/reflow protection diode/varistor 255: bus bar electrical connection line 256: electrical connection operational negative polarity / connection line 257: bypass diode 25 8: Thin film electrical conductor 270 on dielectric or varistor: external edge contact / gold chrome coating 271 : external photodiode layer 272 : intermediate photodiode layer / photodiode 273 : central electrical contact 274: Central photodiode layer/internal doped layer 275 : Center electrical contact 280: electrical contact / side contact / contact electrode 281: edge electrical contact / photodiode bead / edge edge conductor / photodiode 55 200824134 282: external photodiode layer / photodiode bead / light two Polar body 283: intermediate photodiode layer / photodiode bead / photodiode 284: central photodiode / photodiode bead / photodiode 285 : central electrical contact 286 : central electrical contact 287 : electrical contact / Center contact/side contact/contact electrode 288: dielectric substrate/electrode substrate/dielectric 289: back contact/foil contact/electrode substrate/metal foil substrate/backing contact 290: intermediate photodiode layer / Photodiode Beads / Photodiode 291 : External Light Diode Layer / Photodiode Bead / Photodiode 292 : External Edge Electrical Contact / Photodiode Bead / Edge / Edge Conductor / Light Diode 293 : Molded Glass Covering Lens or Mirror/Glass 294: Elastic Transparent Interface Material / Transparent Interface Adhesive 295: Slot or Cavity / Elastic Slot 56 in Dielectric Material

Claims (1)

200824134 X. Patent application scope: A clothing arrangement comprising a direct or indirect photon converter or generator 1 and an electrical connection device comprising a repeatedly formed granular semiconductor body, repeatedly formed grooves, holes, A plurality of slots or a plurality of holes are retained. A semiconductor body such as a ray, an optical conduit to the semiconductor body or the semiconductor body, and at least two electrodes that are part of the slot or aperture, which are resiliently compressed to each semiconductor body. 2. A device as claimed in claim 1, wherein the light pipe is incorporated into a V 3 mirror lens, a transparent material, a flash body, a fill body, a scattering surface, a fired or an interference structure. 3. The device of claim 1, wherein the light pipe comprises a mirror, a refractor, a lens, a scintillator, a phosphor, a scattering surface, or an interference structure that concentrates light to the photon converters. 4. The device of claim 5, further comprising a non-flat light transparent refractive frosting screen, the 曰忒t 1曰忒 non-flat light transparent refractive cover layer being shaped to fit over the shaped semiconductor body, and The light is concentrated to the semiconductor bodies, and wherein the body of the scorpion; the scorpion _&amp;, A, and the two packages are connected to form an array of photovoltaic cells. 5. The device of claim i, wherein the aperture, slot, plurality of apertures or slots are shaped to match the shape of the semiconductor bodies. 6. The device of claim 1, wherein each of the semiconductor bodies has a shape, and each of the slots and the ancient female pleats have a shape that will not allow any of the incorrect electrical connections. Assembly in the direction. 7. The apparatus of claim 1, wherein each of the semiconductors has a shape and structure, and each of the slots or holes has a shape and structure which results in an elastic compression on the semiconductor body. 8. The method of claim 4, wherein each of the semiconductor bodies has a shape and structure, and each of the slots or holes has a shape and structure, which results in two differentities in each of the semiconductor bodies. The at least two electrodes of the region are elastically compressed to form a photodiode or a thermocouple. • 9. The device of claim 1 wherein each of the semiconductors has a specific repeating shape structure that fits the shape and structure of each slot or hole, and the steps include placement on the semiconductor body. Light transmissive coverage ^ The Shift beta semiconductor body is placed in the slot or aperture and the light transmissive cover layer of the light transmissive cover layer to cause elastic compression of the at least two electrodes on two different regions ν of the semiconductor body Or elastically attached to form a photodiode. Win the device of the first item of the patent scope, in which the shape and structure of each of the semiconductor light-transmissive dielectric covering layers, =-shape and structure, which results in 5 different s on each semiconductor body An elastic compression or elastic containment of at least two electrodes of the sea to form a photodiode. The device of claim 1, wherein each semiconductor light transmissive dielectric cover layer has a shape and structure, and each of the slots or holes has a shape and structure, An elastic compression or elastic containment of at least two electrodes on two different regions to form a light-based system 5 ± b T. J- /, medium self-lighting light concentrated through the light transmission dielectric cover Layer folding 58 200824134 Shooting, diffracting, scattering, interfering, fluorescing or reflecting, or/and reflecting, refracting, scattering, diffracting, interfering, or honing light from such electrodes. 12·If you apply for a patent scope! Device wherein each adult system is electrically connected by using each slot or hole having the two or more electrodes as part of the hole or slot and each slot or The hole has a shape and a structure which results in two different regions of each semiconductor body. &gt; + plus $ &gt; , ^ an elastic compression or elastic perforation of the two cladding poles, # A 2仃! Touching and forming a photodiode; the further step comprises forming, ..., and covering the book, wherein the light from the light is concentrated through the light transmissive dielectric cover layer to refract, diffract, scatter, interfere, and fluoresce Or reflection, or / and reflection, refraction, scattering, diffraction, interference, or glory from the dedicated electrode. 13. The device of claim 1, wherein the per-forming semiconductor system is electrically connected by using each slot or hole having the two or more electrodes 'as the hole or slot a portion, each slot or/, having an I-shape and/or a Ό-shape, and a shape and structure resulting in a crucible collapse or elastic containment of the at least two electrodes on different regions of the semiconductor body Electrically contacting and forming a photodiode; further comprising: a light transmissive dielectric cover layer 自 自 自 自 集中 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射 折射Light or reflection, or/and reflection, refraction, scattering, 'diffraction, interference, or fluorescing from the electrodes, and an elastic dielectric material between the electrodes and the outer elastic cover layer, and A light transmissive dielectric material between the light transmissive dielectric cover layer and the semiconductor body and/or the outer elastic cover layer. 14. The device of claim i, wherein each hole or slot is 59 200824134 an elastic structure 'the elastic structure can be elastically opened to accept the semiconductor and then the power is released, or the semiconductor body is The wedge is pushed into the hole or slot and the semiconductor body remains subjected to compressive forces from the resilient structure. 15. The device of claim 1, wherein each semiconductor face has an open shape and a structure, further comprising a light transmissive cover layer, wherein each of the slots or holes has a shape and structure. Causing an elastic compression of two electrodes on two different regions of the semiconductor to form a photodiode, and the electrodes are welded, diffused, soldered, brazed together, and the light transmissive cover layer and the The equal grooves or pore structures are attached to each other. I6. The device of claim 1, wherein the light converted by the photon converter is sunlight, thermal radiation from an electric source, radioactive light emission, chemical light emission, or laser light. 17. The apparatus of claim 8 wherein the optical conduit and the slot or aperture structure are attached to each other by (4), welding, welding, clamps, fasteners, or interlocking components. 18. Included in the scope of the patent application, vacuum deposition, powder deposition, inkjet coating, electroplating, gluing or merging. 19. The i-body body as claimed in the patent application has a groove or a bore. Device wherein the electrodes are printed, laminated, foil imprinted, plasma sprayed onto the trough, the slots, the holes or the device, wherein each of the shaped semiconductors is directed toward the semiconductor Flat region of the body 20. The device of claim 1, wherein at least one semiconductor 60 200824134 body is doped to form a region of residual electrons, & residual hole-- or X forms a check gradient, And wherein the at least two electrodes comprise an electrical conductor contacting the remaining electron region, and an electrical conductor contacting the remaining hole region, and an external voltage gradient to form a photodiode. 21. The device of claim ii, wherein at least one of the semiconductor bodies electrically conductive with two different materials is in contact with the semiconductor body, and forming a thermoelectric junction, a plurality of thermoelectric junctions, an electron through interface , multiple electrons follow the interface, _thermal ion junction, or multiple thermal ion junctions. 22. The device of the scope of the patent application is to be used as a photovoltaic cell, a light emitter, a thermal energy to electrical converter or a refrigerator. 23. If the device system and system of claim 1 are included in the patent, the further step comprises a J material connection, and the electrical connection line is also a light reflection steaming, a refractive reflector, a political projection, a scintillator or a phosphor. Light gathering system. 24^ The device of claim i, wherein the light pipe is a light-concentrating optical device that is coupled to the formed photodiode. M. The device of the patent range f Μ wherein the groove or hole formed by the groove or the hole or the hole formed by the hole is a part of the light pipe. A device according to the first aspect of the invention, wherein the groove or hole formed by the groove or the hole has an electric carrier which also functions as a light collecting member. 27. The device of claim 5, wherein the electrical connection is further used as a fuse by having a small number of electrical conductors on or surrounded by a dielectric material. 28) The device of the scope of the patent scope is as follows: (4) The electrode is made of electric conduction, thin raft, fiber, substrate, pedestal, metal filament, 200824134 fabric, mesh, powder, elastic The surface of the crystal form, or the film is manufactured. 29. The device of the patent _帛1, wherein the electrodes are sprayed by forging money, electro-polymerization spraying, powder coating, inkjet printing, silk The technique of screen printing, electroplating or foil lamination is deposited on a dielectric substrate. A 30.:: The device of claim 1 wherein the electrodes are: on top of the other - elastic electronically conductive material Elastic dielectric material 31. The device of claim 3, wherein the electroelastic compression elastically bridges or buffers differential thermal expansion dimensional component differences. 32. The device of claim 1, wherein the electrodes have electrical contacts, and wherein: 哕#, 々 々 々 , , , , , , , , , , , , , , The kneading material is formed on the wrinkles, corrugations, polycrystalline surfaces, curves, and the thermal expansion stress between the orbiting materials in the bow. 33 · If the patent application scope is 32 Jg 夕 # $ ^ , pieces and the electrical contacts and 22: the device... these optical group 3 and 3 荨 荨 face materials are formed in folds, ripples, multiple days 1 Surface, curve and curved towel, W.4 p, "Change radiation heat transfer and heat transfer to the fluid adjacent to the barrier. 34. The device of claim 1, wherein the device is on the outer surface of one of the radiation-emitting or convective-enhanced heat-transfer junctions. The device is coated with the device of the first contact, wherein the shaped semiconductor is Orientation and movement and retention at a low level 35. As claimed in the patent scope, the first body is placed on the friction surface of the holes or slots. wherein the grooves or holes 36 are as in the device of the scope of claim i 62 200824134 Earth complex; ^ 4 dielectric film on the part of the electrode. 3 7 _ as claimed in the patented ribbed device, wherein the groove or hole has the slave fluorine as the sediment in the standing β 八山# 邠A low coefficient of friction dielectric of a compound or a polyxanthene lubricant. 38. The apparatus of claim 1, wherein the step further comprises: or the like for orienting or holding the semiconductors on: Gravity, static electricity, electric field or magnetic field. 39. The device of claim 1, wherein the step further comprises positioning in the formed groove or hole and for holding the shaped semiconductor in the opening / slot or hole or as a _ phase The device of claim i, wherein the shaped semiconductor body is a photodiode and is a ball that is ground, cut, molded, or planarized on one or more sides, and The apparatus of claim 1, wherein the shaped semiconductor body forms an A diode from one of the spheres or the granular body of the conductor, the ball Or the granular body is ground, cut, molded or flat on one or more sides and at least one of the electrodes is attached to the abrasive side, and the other of the temple electrodes is attached to Forming another region of the semiconductor body such that the electrodes are not in contact with each other. The apparatus of claim J, wherein the shaped semiconductor is formed with a layer of a dopant or a material to form a plurality of The device of claim 1, wherein the light pipe splits the first spectrum and the split spectrum is optimally placed in the same region of the shaped semiconductor body. Such as applying for a patent The device of claim 1, wherein the electrodes remove heat from the semiconductor. 45. The device of claim 1, wherein the device further comprises a coating on the surface of the converter that is shielded from the light source The coating i is reluctant to radiate heat or convection from the surface, and the coating further comprises bumps, politicians, or ridges, or loaded with titanium dioxide particles, graphite particles, or carbon black particles. A polymer or rubber film. 46. The device of claim 1, wherein the light pipe is thermally coupled to the semiconductor. 47. The device of claim </ RTI> wherein the light pipe is also formed A part or all of the surrounding layer of the semiconductor. The apparatus of claim 1, wherein the electrical connection lines to the semiconductor form an array of parallel and series circuits. 49. The device of claim 1, wherein the electrical connection to the semiconductor is an electrical conductor adjacent to a relatively large amount of insulator for disconnecting the package conductor if it is overheated, melted, or vaporized. The circuit. 5. The device of claim 2, wherein the electrical connection to the semiconductor forms an array of parallel and series circuits, wherein the parallel electrical connections between the semiconductors have a current flow An electrical conductor that increases the resistivity. The device of claim 1, wherein the semiconductor or the electrodes are held by a glue. 52. The device of claim 3, wherein the optical conduits are held by the glue to the optical diodes by means of 64 200824134. A device of claim 1, wherein the semiconductor or the susceptor is held by a glue which also reduces optical reflection between the light pipe and the light pipe. 54. The device of claim 1, wherein the light pipe at the interface between the outer plates of the outer disk has a surface treatment that is degraded by a destructive interference coating or a folding gradient. The device of claim 1, wherein the electrode is held by a glue having a light, heat, temperature change, humidity, chemical contact, chemical diffusion, vibration, or radiation The initial cure. 56. The device of claim 1, wherein the semiconductor is held by a viscous material to cause the semiconductor to be in the slots or holes.曰57. The device of claim 1, wherein the semiconductor and the electrodes are welded, welded, diffused, by heating using self-heating, subtractive contact, flash absorption, laser light absorption, vibration energy or current, Brazing or fusing to secure the electrical contacts. 58. The device of claim 1, wherein the electrodes are thin film circuits. / 59. The device of claim i, wherein the electrodes are thin film circuits deposited on the fiscal optical device. 6. The device of claim </RTI> wherein said electrodes are thin film circuits deposited on refractory optics that also reflect light to the semiconductor. 61. The apparatus of claim 1, wherein the second forming 65 200824134 slot, hole or holes are for holding and positioning the V bodies to the formed slots, holes, slots or These holes are in. + 62. For the device of the scope of the patent application, the remainder and the holes and slots are formed to have a circuit network: body: • as in the device of the patent application, wherein the remainder of the semiconductor body The apertures and slots are formed into an array having a 2-conductor set of light and having a network of such semiconductor electrical circuits. J-64. The apparatus of claim 5, wherein a remaining portion of the semiconductor body and the holes and the slots form a light conversion circuit, wherein the plurality of semiconductors are electrically connected in parallel and the semiconductors connected in parallel are connected in series to other electrical parallels Connected semiconductors to form an electrical matrix. 65. The device of claim 1, wherein a remaining portion of the semiconductor body and the holes and slots form a light conversion circuit, wherein the plurality of semiconductors are electrically connected in parallel and the semiconductors connected in parallel are connected in series to other % connected semiconductors to form an electrical matrix having semiconductor bodies disposed in a plurality of holes or slots electrically connected in parallel, the semiconductor bodies serving as high voltage conditions surrounding the photoconducting semiconductors connected in parallel Bypass diode. 66. The device of claim 1, wherein a remaining portion of the semiconductor body and the holes and slots form a light conversion circuit, wherein the plurality of semiconductors are electrically connected in parallel and the semiconductors connected in parallel are connected in series to other electrical parallel connections. The semiconductor is formed to form an electrical matrix having a semiconductor body disposed in a slot, a plurality of holes or a plurality of slots, and the semiconductor body 66 200824134 is used as a reverse current flow condition blocking diode. The apparatus of claim 1, wherein the slots or holes are formed in a dielectric material. 68. The device of claim 1, wherein the grooves or holes are formed from a dielectric material coated with an electrically conductive material. 69. The device of claim 1, wherein the grooves, holes or private electrodes have textures, bumps, particles, ridges, runners, fins, metal filaments or elastomeric polycrystalline surfaces. 7〇. If you apply for a patent scope帛! The device of the invention, wherein the semiconductor body is made of a semiconductor or a layer thereof, such as a compound of Shi Xi, (10) Xian, (4) Se2, handsome nGa) Se2 instrument s, GaA=CdTe, AlGaAs, AlGaP, Ge 〇71· The device of claim i, wherein the grooves or holes are made in -dielectric+, such as the glass, polyimine plastic, polyarsenide plastic, $1, fluorinated hydrocarbon, ceramic, coated Agglomerated steel, or aluminum, coated with bismuth oxycarbonate steel or aluminum, coated steel, copper, brass, or aluminum, coated ceramic steel, or coated plastic Steel or aluminum. 72. The device of claim 2, wherein the electrodes are made of electrical conductors, such as gold, platinum, palladium, silver, tin, aluminum, bismuth, lead, copper, rhodium, titanium, molybdenum, buttons, Tungsten, aluminum, nickel, carbon, niobium, iron, chromium, niobium, tantalum, hammer, indium, alloys containing one of these materials, or conductive compounds such as tin oxide, oxidized, or boron doped diamond. 73. The device of claim </RTI> wherein the device further comprises a dielectric cover made of glass, light transmissive plastic, fluorocarbon plastic, and polyoxyxafluorocarbon 67 200824134. 74. The device of claim 2, wherein the diffuser is made of particles of titanium dioxide. 75. The device of claim 2, wherein the scallions are made of plastic or rubber. The apparatus is a device according to claim 2, wherein the phosphor is made of zinc sulfate doped with copper or silver or yttrium aluminum garnet. 77. The device of claim 2, wherein the semiconductor is fabricated from a doped stone sphere having at least one flat side. 78. The device of claim 2, wherein the semiconductor is fabricated from a doped body, wherein one carrier is doped on the interior of the sphere and the other carrier is doped on the surface layer of the sphere And wherein at least one of the cut or ground sides is sufficiently flat to expose the inner doped region, and an electrical conductor material point is attached to the exposed flat region of the inner doped region. 9. If you apply for a patent range 帛! In the device, the semiconductor bodies are electrically connected in parallel to other semiconductor-like arrays, and are connected in series to similar semiconductors and to electrical components such as wires, diodes, switching H wires, capacitors, battery packs. Λ Fuel cell, flywheel, DC sigma converter, DC to AC converter. 8A. The device of claim 3, wherein the light-concentrating optical device is directed to and tracked to a disk of the sun to concentrate light into the light-emitting diodes. Wherein the array is in the direction of 'the fluid passing through the apparatus of the invention, as in the apparatus of claim 4, avoiding the surface of the array of light sources having an enclosure 68 200824134 surface' such as by convection, suction of fluid Flow and vaporization to remove heat. 82. The device of claim 4, wherein the array has an enclosure on the surface facing the array that avoids the source of light, which holds a material that undergoes a thermal phase change from the photodiode The body absorbs heat. XI, schema ·· as the next page 69