CN101496113A - Voltage switchable dielectric material having high aspect ratio particles - Google Patents
Voltage switchable dielectric material having high aspect ratio particles Download PDFInfo
- Publication number
- CN101496113A CN101496113A CNA2007800286079A CN200780028607A CN101496113A CN 101496113 A CN101496113 A CN 101496113A CN A2007800286079 A CNA2007800286079 A CN A2007800286079A CN 200780028607 A CN200780028607 A CN 200780028607A CN 101496113 A CN101496113 A CN 101496113A
- Authority
- CN
- China
- Prior art keywords
- particle
- har
- voltage
- adhesive
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
A composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.
Description
Related application
The application requires to submit on July 29th, 2006, name is called the interim U.S. Patent application No.60/820 of " Voltage SwitchableDielectric Material With Reduced Metal Loading (voltage switchable dielectric material with metallic stuffing of minimizing) ", 786 priority, above-mentioned application are included in thus by reference in full.
The application also requires to submit on September 24th, 2006, name is called the interim U.S. Patent application No.60/826 of " Voltage SwitchableDevice and Dielectric Material With High Cu rrent Carrying Capacity and aProcess for Electroplating the Same (having the voltage switchable device and the dielectric material of high current carrying capacity and the process of electroplating this voltage switchable device and dielectric material) ", 746 priority, above-mentioned application are included in thus by reference in full.
The application also requires to submit on July 11st, 2007, name is called the interim U.S. Patent application No.60/949 of " Binders for VoltageSwitchable Dielectric Materials (adhesive that is used for voltage switchable dielectric material) ", 179 priority, above-mentioned application are included in thus by reference in full.
The application is that submission on November 21st, 2006, name are called the U.S. Patent application No.11/562 of " Light Emitting DeviceUsing Voltage Switchable Dielectric Material (luminescent device of working voltage switchable dielectric material) ", 289 part continuation application; That this U.S. Patent application requires is that on November 22nd, 2005 submitted to, name is called the interim U.S. Patent application No.60/739 of " RFID Tag UsingVoltage Switchable Dielectric Material (the RFID label of working voltage switchable dielectric material) ", 725 rights and interests, and require to submit on November 30th, 2005, name is called the interim U.S. Patent application No.60/740 of " Light Emitting Devices with ESDCharacteristics (luminescent device with ESD characteristic) ", 961 rights and interests; All are above-mentioned all includes in full respectively thus by reference in first to file.
The application is that submission on November 21st, 2006, name are called the U.S. Patent application No.11/562 of " Wireless CommunicationDevice Using Voltage Switchable Dielectric Material (wireless communication devices of working voltage switchable dielectric material) ", 222 part continuation application; That this U.S. Patent application requires is that on November 22nd, 2005 submitted to, name is called the interim U.S. Patent application No.60/739 of " RFID TagUsing Voltage Switchable Dielectric Material (the RFID label of working voltage switchable dielectric material) ", 725 rights and interests, and require to submit on November 30th, 2005, name is called the interim U.S. Patent application No.60/740 of " Light Emitting Devices with ESDCharacteristics (luminescent device with ESD characteristic) ", 961 rights and interests; All are above-mentioned all includes in full respectively thus by reference in first to file.
The application is that on September 28th, 2004 bulletin, name are called the U.S. Patent No. 6 of " Current Carrying StructureUsing Voltage Switchable Dielectric Material (the current-carrying structure of working voltage switchable dielectric material) ", 797,145 part continuation application; This United States Patent (USP) be submitted on November 10th, 1999, the existing U. S. application sequence No.09/437 that is abandoned, 882 part continuation application, and require the U.S. Provisional Application No.60/151 that submitted on August 27th, 1999,188 rights and interests; All are above-mentioned all includes in full thus by reference in first to file.
Technical field
Disclosed embodiment relates in general to the field of the changeable dielectric of voltage (VSD) material.More specifically, described in this manual embodiment comprises the VSD material, and this VSD material comprises as (HAR) particle of the conduction of filler or semiconductive high aspect ratio (aspect-ratio).
Background technology
The changeable dielectric of voltage (VSD) material is used more and more.For example, these application comprise it are used on printed circuit board (PCB) and the device package, so that handle transient voltage and Electrostatic Discharge incident.
There are various traditional VSD materials.Such as U.S. Patent No. 4,977,357, U.S. Patent No. 5,068,634, U.S. Patent No. 5,099,380, U.S. Patent No. 5,142,263, U.S. Patent No. 5,189,387, U.S. Patent No. 5,248,517, U.S. Patent No. 5,807,509, the example of voltage switchable dielectric material is provided in the list of references of WO 96/02924 and WO 97/26665.The VSD material can be " SURGX " material of being produced by (Littlefuse, Inc. has) SURGX company.
Though the VSD material has a lot of purposes and application, traditional synthetic of this material has many shortcomings.Typical traditional VSD material is frangible, and easily scratch or be vulnerable to other damaged surfaces lacks bonding strength, and has high thermal expansivity.
Description of drawings
Fig. 1 is a block diagram, and it is illustrated in preparation according to used composition in the process of the VSD material of an embodiment of the present invention.
Fig. 2 illustrates and is used for preparing according to a process embodiment of the present invention, have the VSD material compositions of high aspect ratio particles at adhesive.
Fig. 3 A is the cutaway view of VSD material, and wherein the VSD material is prepared according to one or more embodiments of the present invention.
Fig. 3 B illustrates according to the clamp voltage of the VSD material of Fig. 3 A or other local described embodiments and the basic electrical characteristics figure of trigger voltage.
When Fig. 3 C-Fig. 3 E is illustrated in the generation of response voltage incident, the voltage of the different instances of VSD material according to one or more embodiments of the present invention and current capability figure.
Fig. 4 shows another process according to an embodiment of the present invention, can comprise the HAR particle that covers conductor or semiconductor particle by this process VSD material.
Fig. 5 A and Fig. 5 B are illustrated under the embodiment of the present invention, cover the filling how metal/inorganic conductor or semiconductor particle can reduce this kind particle in the VSD material with the HAR particle.
Fig. 5 C illustrate according to an embodiment of the present invention, when being dispersed in the adhesive with nanoscale as the HAR particle of the filler in the adhesive of VSD material, the unordered relatively distribution of this particle.
Fig. 6 A and Fig. 6 B all illustrate the not isostructure of substrate devices, and this substrate devices is to utilize according to a VSD material embodiment of the present invention, have the HAR particle in its adhesive to construct.
Fig. 7 illustrates the process that use is electroplated according to organic VSD material of the arbitrary embodiment described in Fig. 1-5C.
Fig. 8 is the sketch of electronic device, and the VSD material of the described embodiment of this specification can be set on this electronic device.
Embodiment
Embodiment described in this specification provides the device that comprises the VSD material compositions, and this VSD material adopts semiconductive or the electric conducting material with high relatively aspect ratio, so that strengthen the mechanical property and the electrical characteristics of VSD material.Further, nanoscale conductors and semiconductor are used in other embodiment designs, to be used to strengthen the attribute and the characteristic of VSD material.
Usually, " the changeable material of voltage " or " VSD material " are the following any composition or the combination of composition, the combination of this composition or composition has the characteristic of dielectric or insulation, unless will impose on this material above the voltage of the character voltage level of material, this material conduction that becomes in this case.Therefore, the VSD material is a dielectric, imposes on this material unless surpass the voltage (what for example esd event provided) of feature level, and the VSD material conducts electricity in this case.Can further the VSD material be characterized by any material with nonlinear resistance material characteristics.
The VSD material also can be characterized as being: in its composition be non-layered and uniformly, present described electrical characteristics simultaneously.
Further, an embodiment shows, the VSD material can be characterized as being the material that comprises with the partially mixed adhesive of conductor or semiconductor particle.When the voltage that do not exist above the character voltage level, meet the dielectric property of adhesive on the material monolithic.When the voltage that applies above the character voltage level, has conductive characteristic on the material monolithic.
As will be described, one or more embodiments provide the HAR particle are combined in the adhesive of VSD material.The HAR particle can be used as nanometer particle and is dispersed in the adhesive, can reduce the filling of metal, strengthens mechanical property and/or improves electrical characteristics (comparing with more traditional VSD material).
Except that other benefits, one or more embodiment described herein provide comprise, the device of integrated VSD material compositions, the VSD material compositions perhaps is provided, and this VSD material compositions has improved mechanical performance, comprises the performance of high compression-strength, scratch resistance and non frangible.In addition, described in this manual one or more embodiments provide the preparation of VSD material, and this VSD material has the ability of the metal of high bonding strength and good adhesion copper and so on.Utilize composition described herein that many other benefits can also be provided.
Therefore, one or more embodiments further comprise the adhesive that is used for the VSD composition, and this VSD composition comprises the conduction or the semiconductive particle of " nanoscale " size.These can comprise the HAR particle, comprise super HAR particle (have 1000 or more the aspect ratio of high-magnitude) in some cases.In this application, nanometer particle is meant the particle of minimum dimension (for example, diameter or cross section) less than 500 nanometers.One or more embodiments are considered the nanometer particle of minimum dimension less than 100nm, and further, other embodiments are considered less than the 50nm size.The example of this particle comprises carbon nano-tube, though can consider to use the particle of many other kinds.Carbon nano-tube is the example of super HAR particle, and aspect ratio reaches 1000: 1 or be higher.Also consider to have substitute or the additive of the material of lower aspect ratio, comprise in carbon black (L/D reaches 10: 1 orders of magnitude) particle and carbon fiber (L/D reaches 100: the 1 orders of magnitude) particle one or more as carbon nano-tube.
Further, the nanometer particle with medium aspect ratio is used in the embodiment design that substitutes.For example, one or more embodiments comprise the adhesive of nanometer rods with the VSD material are combined.The variant of some nanometer rods that formed by metal or semiconductor has the aspect ratio that changes between 3-10.Therefore, one or more embodiments consider to use nanoscale conductors or the semiconductor with medium aspect ratio.
Select this class can form the quantity of the polymerization phase of VSD material (polymer phase) particle, exceed and ooze under the threshold (percolation threshold) so that VSD still is in (or just being in).Ooze under the threshold for the VSD material is maintained to exceed, the quantity that is used in the metallic (or other non-polymeric phase particles) in the VSD composition can change relatively with the quantity of the polymer particle that uses.Therefore, according to one or more embodiments, can be used for preparing the quantity number affects of (or being different from this) (partly) electric conducting material of being subjected in the polymer of VSD composition, using a little of the metallic of VSD, thereby still just in time ooze under the threshold exceeding on this material monolithic.
The quantity of the HAR particle that can use as mentioned, can be on the whole by the electrical characteristics optimization or the restriction of VSD material.In one embodiment, the quantity and the type of HAR particle can be set on the amount, ooze threshold or exceeding the quantity of oozing under the threshold so that the adhesive of VSD material just in time is in to exceed.In order to make adhesive be in this limit value, can be according to the quantity that the desired design parameter that obtains of VSD and characteristic are regulated the metallic that comprises the VSD material.
The current handling capability of this enhancing has been facilitated can handle the more ability of macro-energy incident (than previous ESD material).The example of this class incident is ESD, EFT, EOS and lightning.
Generally, the character voltage measurement unit of VSD material is volt/length (for example, per 5 mils).One or more embodiments have designed, and the VSD material has the character voltage level above the voltage level of operating circuit.This kind voltage level can be relevant with the transient state of similar static discharge etc., though embodiment has designed the electric incident of plan.And one or more embodiments have designed, and when the voltage that do not exist above the character voltage level, material shows similarly with adhesive.
Further, an embodiment provides the VSD material that is formed by described process or method.
Further, electronic device can be provided with the VSD material according to arbitrary embodiment of describing in this specification.
In one embodiment, HAR particle or material are the carbon nano-tube of single wall or many walls.
And one or more embodiments provide mixed uniformly material and/or the material of non-layered on cross section.This material can be VSD, because it presents non-ohm (non-ohmic) characteristic, such as surpass the ability that is transformed into conductor under the situation of character voltage level from dielectric medium at the voltage that applies.
Fig. 1 is a block diagram, is illustrated in the process used composition of preparation according to the VSD material of embodiment of the present invention.In one embodiment, conduction and/or semiconductive high aspect ratio (HAR) particle 110 combine with conductor and/or semiconductor particle 120 and form VSD material 140.As optional additive, the insulator particle also can combine with conductor/semiconductor particle 120.Adhesive 130 can combine with HAR particle 110 and conducting particles and form VSD material 140.VSD process for preparation 150 can be used in conjunction with the various components of VSD material 140.For example the process for preparation that is used for VSD material HAR particle 110 is described below with the embodiment of Fig. 2.
In one embodiment, adhesive 130 is the matrix that keeps HAR particle 110 and conductor/semiconductor particle 120.In one embodiment, HAR particle 110 disperses as nanometer particle.In one embodiment, the quantity that is dispersed in the HAR particle in the adhesive makes adhesive just in time be in to exceed to ooze under the threshold.As the nanometer particle that disperses, HAR particle 110 comprises that some on one or more yardsticks (for example, cross section, diameter, width) are nano level and the particle of each self-separation each other.Therefore, process for preparation 150 can be evenly distributed in particle in the adhesive 130.
In one embodiment, HAR particle 110 comprises organic conductive or semiconductive particle, the especially only slender particles of carbon containing.For example, HAR particle 110 can comprise carbon nano-tube corresponding to elongated or columniform fullerene, perhaps even carbon black.Carbon nano-tube can be single wall type or many walls type.
As an alternative or supplement, HAR particle 110 can be corresponding to conduction or semiconductive inorganic particulate, such as by nano wire or some type nanometer rods provided.The material that is used for this particle comprises copper, nickel, gold, silver, cobalt, zinc oxide, tin oxide, carborundum, GaAs, aluminium oxide, aluminium nitride, titanium dioxide, antimony, boron nitride, tin oxide, tin indium oxide, indium zinc oxide, bismuth oxide, cerium oxide and antimony oxide zinc.
In one embodiment, conductor/semiconductor particle 120 comprise combine with semiconductor particle, such as the conductor of metal, this semiconductor particle comprises silicon, carborundum, titanium dioxide, boron nitride, aluminium nitride, nickel oxide, zinc oxide, zinc sulphide, bismuth oxide, cerium oxide, iron oxide, metal and/or compound, and this compound is selected from oxide, metal nitride, metal carbides, metal boride, metal sulfide or its combination.
According to one or more embodiments, other components or the composition that use in process for preparation 150 comprise solvent and catalyst.Solvent can be added to adhesive 130 with separating particles, otherwise this particle can be concentrated or cohesion with nanoscale.Also can utilize the mixed process particle of spaced-apart equably.In one embodiment, the result of mixed process is, thereby composition is mixed uniformly with the nanoscale dispersed particle.Therefore, particle or other HAR particles such as carbon nano-tube etc. can separate and be evenly distributed in the material relatively separately fully.In order to realize that nanoscale disperses, the design of one or more embodiments continue several hrs or longer during in use the mixing apparatus (for example, such as rotor-stator blender, ball mill, laboratory mill and other high shear mixing technology) of sound wave blender and precision.In case mixed, can be with mixture solidified or the drying that obtains.
Adhesive 130 also can be various types of.Adhesive 130 may be provided in the adhesive that keeps HAR particle 110 and conductor/semiconductor particle 120.According to different embodiments, adhesive 130 is formed by a kind of material that is selected from silicon resin copolymer, phenolic resins class (phenolic resins), epoxy resin, phenolic resins, polyurethane (polyurethane), poly-(methyl) acrylate, polyamide, polyester, Merlon, polyacrylamide, polyimides, polyethylene, polypropylene, polyphenylene oxide, polysulfones, sol-gel material (solgel material) and pottery.Adhesive 130 can be corresponding to suspending and/or keeping HAR particle 110, conductor/semiconductor particle 120 and other to comprise the particle of VSD material 140 or the adhesive of compound.
VSD preparation with HAR material
Roughly, embodiment provides and uses such VSD material: it is the percentage conduction or the semiconductive HAR particle that comprise 5-99% adhesive, 0-70% conductor, 0-90% semiconductor and account for composition volume 0.01-95% by volume.Such VSD material is used in the design of one or more embodiments, and it is the percentage conduction or the semiconductive HAR particle that comprise 20-80% adhesive, 10-50% conductor, 0-70% semiconductor and account for composition volume 0.01-40% by volume.Further, such VSD material is used in the design of one or more embodiments: it is the percentage conduction or the semiconductive HAR particle that comprise 30-70% adhesive, 15-45% conductor, 0-50% semiconductor and account for composition volume 0.01-25% by volume.The example of adhesive comprises silicon resin copolymer, epoxy resin, polyimides, phenolic resins class, polyethylene, polypropylene, polyphenylene oxide, polysulfones, sol-gel material, pottery and inorganic polymer.Examples of conductive materials comprises metal, such as copper, aluminium, nickel, silver, gold, titanium, stainless steel, chromium and other alloys.The example of semiconductive material comprises organic and inorganic semiconductor.Some inorganic semiconductors comprise silicon, carborundum, boron nitride, aluminium nitride, nickel oxide, zinc oxide, zinc sulphide, bismuth oxide and iron oxide.Can select concrete preparation and composition at the mechanical performance and the electrical property of the concrete application of the most suitable VSD material.
Fig. 2 illustrates a kind of process that is used to prepare according to the composition of a VSD material embodiment of the present invention, that have the HAR material.At first, in step 210, produce resin compound, it comprises the composition of conductor, semiconductor particle and HAR particle, and this HAR particle is used as filler to reduce conductor/semiconductor particle composition in the adhesive.When finishing preparation, this resin compound can be as the adhesive of VSD material.In one embodiment, the HAR particle can be corresponding to carbon nano-tube.Nano wire or nanometer rods are used in other embodiment designs.
According to an embodiment, the amount of adding the HAR particle of this mixture to is chosen to be this mixture just in time remained on to exceed on the whole oozes under the threshold.Yet the amount of existing HAR particle can change according to the percent by volume that this particle is expected in the VSD material that is mixed with.Use in the embodiment of carbon nano-tube as the HAR particle at one, add carbon nano-tube amount in the resin to and make carbon nano-tube shared percentage by weight in whole composition more particularly, account for the 0.1-10% of the VSD material that is mixed with less than 10%.Embodiment described herein recognizes, the amount that is used for realizing the HAR particle of desired effects in adhesive can depend on the aspect ratio of the material of being considered.For example, if the aspect ratio of single HAR particle is lower, adhesive can comprise the HAR particle greater than 10%.As example more particularly, the particle that had aspect ratio and be 1000: 1 can account for whole material percentage by weight 1%, be that 10: 1 particle may need 25% or more and have individual aspect ratio.
In step 220, metal and/or inorganic conductor/semiconductor are added in the mixture.Embodiment as Fig. 1 is described, can use the conductor or the semiconductor of many types.Can add more than one organic/semiconductor particles.In one embodiment, titanium dioxide (TiO
2) be used as main conduction/semiconductive particle types (or wherein a kind of), also have other conductive particle.Also can add other curing agent and catalyst component to mixture.
In step 230, can carry out mixed process within the fixed period.In one embodiment, use in during above a few minutes or several hours and comprise that the mixing apparatus of sound wave blender carries out mixed process.Mixed process is used for disperseing the HAR particle with the nanoscale level.A result who mixes so far is that at least some HAR particles are suspended in the adhesive basically separated from one anotherly, thereby can not condense or concentrate in together.If HAR particle individuality can comprise one or more nano-grade sizes, this mixes realizes in adhesive that further nanoscale disperses.
In step 240, mixture is applied on its desired destination.For example, mixture can be applied on two 5 mil gap of giving between the fixed electrode of concrete device.In the target location, mixture solidified is become the VSD material.
Embodiment as Fig. 1 is described, and the VSD material that obtains is compared more traditional VSD material and had many improved mechanical performances.For example, except other can getablely improve, may be more non-friable according to the VSD material of described embodiment preparation, have better compressive strength, adhesiving metal (especially copper) better, and/or have better aesthetic characteristic.
The example of preparation and composition
Can following preparation according to the mixture of embodiment described herein: the HAR particle of carbon nano-tube (CNT) form can be provided, and this carbon nano-tube (CNT) is added to suitable resin compound.In one embodiment, resin compound comprises Epon 828 and silane connecting agent.NMP (N-methyl-2 pyrrolidones) can be added to this resin compound.Subsequently, can add conductor or semiconductor particle to this mixture.In one embodiment, with titanium dioxide together with titanium nitride, titanium diboride, curing compound or curing agent and catalyst mix in this resin.Can in continuing between the mixing period of a few hours (for example 8 hours), for example use the rotor-stator blender this mixture evenly to be mixed with sonication method (sonication).To this mixed process, it is necessary adding NMP.Can use #50 wire-wound bar (wirewound rod) or silk screen printing that the mixture that obtains is applied on the expectation target as coating.In one embodiment, this coating can be applied on 5 mil gap between two electrodes.Subsequently, solidification process can take place, and this solidification process can be changed.A suitable solidification process is included in 75 ℃ and solidified 10 minutes, solidifies 10 minutes at 125 ℃, solidifies 45 minutes at 175 ℃, and solidifies 30 minutes at 187 ℃.
Concrete preparation can change according to design standard and application.Wherein carbon nano-tube comprises as a preparation example of the HAR particle 110 of the adhesive of VSD material:
----weight (g)
CheapTubes 5.4
Epon 828 100
Gelest aminopropyl triethoxysilane 4
(Aminopropyltriethoxysilane)
Total epoxy 104
Nanophase bismuth oxide 98
HC Starck titanium nitride 164
Degussa Dyhard T03 4.575
NMP 25.925
Curing solution 30.5
1-methylimidazole 0.6
HC Stark titanium diboride 149
The titanium dioxide 190 that Millenium Chemical mixes
Total solution 986.1
Total solid 715.575
Epoxy resin: Amin equivalent proportion solid % 72.6%
* curing solution is the nmp solution of the Dyhard T03 of 15 weight %.
Carbon nano-tube has the advantage of organic filler.Can change length or aspect ratio to realize desired characteristic, the switched voltage of described characteristic such as material.
Fig. 3 A is arranged on the cross-sectional view of the VSD material on the device 302, and wherein this VSD material is prepared according to one or more embodiments of the present invention.In one embodiment, thickness or layer or VSD material 300 comprise basis: metallic 310, adhesive material 315 and HAR particle 320 (for example, carbon nano-tube, nano wire).
Yet embodiment recognizes that carbon nano-tube has sizable aspect ratio.This dimensional characteristic makes carbon nano-tube can improve adhesive is delivered to electronics conducting particles from conducting particles when the transient voltage that surpasses the character voltage level occurs ability.Like this, carbon nano-tube can reduce the metallic stuffing that is present in the VSD material.By reducing metallic stuffing, can improve the physical features of this layer.For example, as described in conjunction with one or more other embodiments, the minimizing of metallic stuffing has reduced the fragility of VSD material 300.
Embodiment as Fig. 2 is described, and VSD material 300 can be by being formed on the device 302 on the target location that is deposited on device 302 as mixture.The target location can be corresponding to the ennation 312 between first and second electrodes 322,324.According to one or more embodiments, for the application such as printed circuit board (PCB) etc., ennation 312 pacts (that is, in 60%) 3.0 mils, 5.0 mils, perhaps 7.5 mils.Yet the definite distance of ennation 312 can change according to design specification.In PCB used, scope can for example change between 2 to 10 mils.In semiconductor packages, this value may be littler.In the gap, apply the VSD material and realized processing the electric current that transient voltage produced of the character voltage level that surpasses the VSD material.
Alternatively, device 302 can be for example corresponding to light-emitting diode, radio-frequency (RF) tag or device or semiconductor packages.
Described as other embodiments, the VSD material when being applied to the target location of device, can characterize with electrical characteristic, these electrical features such as feature (perhaps triggering) voltage, clamp voltage, leakage current and current capacity.The HAR particle is used in embodiment design described herein in mixture, the use of HAR particle makes it possible to regulate described electrical characteristics, remains on the mechanical property of other local several expectations of describing of the application simultaneously.
Fig. 3 B illustrates according to Fig. 3 A with at the figure of the basic electrical characteristics of the clamp voltage of the VSD material of other local embodiments of describing of the application and trigger voltage.Usually, character voltage level or trigger voltage are the voltage levels (this voltage level per unit length may all have change) that conduction was connected or become to the VSD material.Clamp voltage is less than or equal to this trigger voltage usually, and is that the VSD material is maintained out the required voltage of state.Under the VSD material was set at certain situation between two or more electrodes, trigger voltage and clamp voltage can be measured as originally on one's body the output of VSD material.Therefore, can be by input voltage level be maintained more than the clamp voltage, and in making during the VSD material is maintained out state less than breakdown threshold energy or time.In application, can change trigger voltage and/or clamp voltage according to input signal, this input signal be profile of tooth, pulse, have definite shape or even in several pulses, modulate and form.
Embodiment recognizes that further another significant electrical characteristics comprise the impedance of off-state, and this impedance is determined by the electric current that measurement runs through the operating voltage of device.The resistivity of off-state is corresponding to leakage current.Before the VSD material is switched on and in the contrast after closing, the resistance coefficient of off-state changes the performance degradation of expression VSD material.In most of the cases, this should be minimized.
More select a step, another electrical characteristics can be measured as the material ability that the oneself keeps after being switched on, closing then corresponding to current capacity.
Table 1 is listed another preparation of VSD material according to one or more embodiments of the present invention, and the HAR particle that wherein uses in adhesive is antimony tin (ATO) nanometer rods.
| Material | Example 1 |
| The FS-10P ATO of Ishihara company nanometer rods | 14.4 |
| HC Starck titanium diboride | 150.0 |
| Gelest SIA610.1 | 4.0 |
| Millenium Chemical titanium dioxide | 190.0 |
| Lubrizole D510 | 9.8 |
| The nanophase bismuth oxide | 98.0 |
| HC Starck titanium nitride | 164.0 |
| Epon 828(Hexion) | 87.15 |
| Degussa Dyhard T03 | 4.49 |
| The 1-methylimidazole | 0.62 |
| The N-methyl pyrrolidone | 275.4 |
| The gap | 5 mils |
| Trigger voltage | 447 |
| |
320 |
Table 1
Table 2 is listed the several additional examples according to one or more embodiments described herein, and wherein the VSD material comprises the carbon nano-tube as the HAR particle.Table 2 is listed the electrical characteristics of measuring under the general condition (being meant is not having difference between the form of input signal and/or between the mode that data adopted of definite electrical characteristics energy), these electrical characteristics are for example quantized by clamp voltage and trigger voltage, and this clamp voltage and trigger voltage produce because of using the VSD material according to described composition.
| Material | Example 1 | Example 2 | Example 3 | Example 4 |
| Weight (g) | Weight (g) | Weight (g) | Weight (g) | |
| Hyperion CP-1203 | 0 | 31.29 | 0 | 40.86 |
| Nickel INP400 | 216.27 | 221.49 | 0 | 0 |
| Momentive titanium diboride (former GE) | 0 | 0 | 55.36 | 55.4 |
| Saint |
0 | 0 | 0 | 0 |
| Epon 828(Hexion) | 40.13 | 10.09 | 51.06 | 12.18 |
| Degussa Dyhard T03 | 1.83 | 1.83 | 2.34 | 2.33 |
| The 1-methylimidazole | 0.1 | 0.13 | 0.3 | 0.3 |
| Imidazoles dintrile (imidazoledicarboni trile) | 0 | 0 | 0 | 0 |
| Methylamino anthracene (methylaminoantrac ene) | 0 | 0 | 0 | 0 |
| Millenium |
0 | 0 | 85.03 | 85.79 |
| The N-methyl pyrrolidone | 80.37 | 80.46 | 83.5 | 123.4 |
| The gap | 5 mils | 5 mils | 5 mils | 5 |
| Trigger voltage | ||||
| 250 | 170 | 1475 | 775 | |
| Clamp voltage | 100 | 70 | 1380 | 220 |
Table 2
About table 2, example 1 provides the composition of VSD material, and it is and other examples basis relatively.In example 1, there is not the HAR particle in the VSD material.And the VSD material has higher metal filled.Example 2 shows and example 1 similar compositions, has just introduced carbon nano-tube as the HAR particle.The result is that trigger voltage and clamp voltage reduce.Reduce trigger voltage and clamp voltage by under the nickel filling condition of given (fixing), increasing carbon nano-tube.
Example 3 also shows the VSD composition that lacks as the carbon nano-tube of HAR particle, and example 4 shows carbon nano-tube is comprised effect in the mixture into.It is as shown in the table, shows the rapid reduction of trigger voltage and clamp voltage.All show composition about example 3 and 4, two compositions of example in chart with rational mechanical property and off-state resistivity and current capacity feature (these all do not have to mention).Yet the clamp voltage of example 3 and trigger voltage value have illustrated that the composition that does not comprise carbon nano-tube is difficult to connect and keep out state.Therefore unusual high trigger voltage and clamp voltage have reduced the serviceability of composition.
Performance chart shown in Fig. 3 C-3E has been supposed the pulse voltage input.Performance chart can be used for the reference of the example of following table.
| Material | Example 5 | Example 6 | Example 7 |
| Weight (g) | Weight (g) | Weight (g) | |
| Hyperion CP1203 | 21.0 | 0 | 1.0 |
| Hexion Epon 828 | 50.25 | 0 | 5 |
| Apply the aluminium of Cabosil | 40.33 | 26.33 | 0 |
| |
0 | 0 | 13.76 |
| Degussa Dyhard T03 | 3.22 | 0.8 | 0.6 |
| Methyl cellosolve (methoxyethanol) | 25.8 | 6.39 | 4.68 |
| The 1-methylimidazole | 0.06 | 0.04 | 0.04 |
| Hexion Epon SU-8 | 0 | 19.55 | 14.32 |
| |
0 | 11.73 | 6.6 |
| Apply the aluminium oxide of |
0 | 15.31 | 0 |
Table 3
Fig. 3 C is a curve chart, and it illustrates the performance chart of VSD material, and this VSD material has relatively large carbon nano-tube (as the HAR particle) concentration in the adhesive of VSD material, as described in example 5.As by shown in the curve chart of Fig. 3 C, the initial voltage event 372 that takes place in the scope of 500-1000 volt causes material to be connected, so that current-carrying.Close the second after-applied voltage event 374 in device first incident that continues and cause and initial incident 372 similar effects, this material is in identical relatively voltage level download stream.The tertiary voltage incident 376 that takes place after device is closed for the second time causes current strength contained in the VSD material similar to twice situation at the beginning.Similarly, Fig. 3 C shows, and the VSD material of the composition in the example 5 has high relatively current capacity, because the VSD material is remained valid after twice connection and the situation of closing.
Fig. 3 D is relevant with example 6, and this example 6 is the VSD compositions that do not comprise conduction or semiconductive organic material.Though the VSD material is effectively in first voltage event 382, not having when follow-up second voltage event, 384 generations can detected non-linear behavior (, connection voltage (turn-on voltage)).
Fig. 3 E is relevant with example 7, and this example 7 has the HAR particle of more a spot of carbon nano-tube form.A small amount of interpolation of this conduction/semiconductive HAR particle has improved the current capacity of VSD material, shown in the current strength of the current strength of first voltage event 392 and second voltage event 394 still less (but existence).
Coated conduction or semiconductive particle
One or more embodiments comprise the preparation of VSD material, and it comprises use conduction or the small filler of semiconductive HAR particle, and this conduction or the small filler of semiconductive HAR particle are combined in the periphery of metallic with coating or other modes.This preparation allows further to reduce the size of metallic and/or reduces otherwise the volume that occupied by metallic.This kind minimizing can improve the whole physical characteristic of VSD material in described mode in other embodiments.
As described below, the small filler of HAR particle, its coating or jointing metal or other inorganic conductor compositions are used in one or more embodiment designs.With the HAR particle coating inorganic/purpose of metallic is roughly to keep the overall effective volume of the electric conducting material in the adhesive of VSD material, reduces the volume of the metallic that will use simultaneously.
Fig. 4 shows more detailed process, can be by the VSD material of this process preparation according to embodiment of the present invention.According to step 410, at first preparation will be loaded into conduction (or semiconductive) composition of the adhesive that is used for the VSD preparation.This step can comprise with HAR particle (for example, carbon nano-tube) with coated particle is combined, thereby when solidifying final mixture, produce desired effects.
In one embodiment, metal and metal oxide particle are carried out independently preparation process.In one embodiment, step 410 can comprise aluminum filtration and alumina powder step by step.Then, every group of powder all uses the HAR particle coating to form conduction/semiconductive composition.In one embodiment, following process can be used for aluminium: (i) every gram aluminium adds 1-2 mM silane (being dispersed in the organic solvent); (2) use sonic applicator (sonic applicator) with dispersed particle; (iii) under condition of stirring, reacted 24 hours; (iv) weighing up Cab-O-Sil or organic conductor adds in the solution; (v) add suitable solvent to Cab-O-Sil and/or organic conductor mixture; (vi) add Cab-O-Sil and/or organic conductor in the aggregate with aluminium (collection); And (vii) a 30-50 ℃ of following dry night.
Similarly, following process can be used for aluminium oxide: (i) every gram aluminium oxide adds 1-2 mM silane (being dispersed in the organic solvent); (2) use sonic applicator with dispersed particle; (iii) under condition of stirring, reacted 24 hours; (iv) weighing up Cab-O-Sil or organic conductor joins in the solution; (v) add Cab-O-Sil and/or organic conductor in aggregate with aluminium oxide; And (vi) a 30-50 ℃ of following dry night.
According to an embodiment, can be used for applying or the preparation conductive compositions such as the HAR particle of carbon nano-tube or nano wire.Can be offset this carbon nano-tube with upright when engaging, thereby extend the conductive lengths of particle, and it is long-pending to reduce required metals in general simultaneously with metallic.This can be by realizing will placing chemical reactor in the surface perimeter that the VSD material internal forms the metallic of conductor.In one embodiment, can with the chemical treatments metallic of another chemicals reaction that is positioned at the vertical end of HAR particle (for example, carbon nano-tube).For example can handle metallic with silane connecting agent.Can handle the end of HAR particle with reactant, thereby make the carbon nano-tube end join the surface of metallic to.
In step 420, the preparation mixture.Adhesive material can be dissolved in the appropriate solvent.Can be by adding the viscosity of solvent realization expectation more or less.Add the conductive compositions semiconductive composition of step 410 (or from) to adhesive material.Can mixed solution to form even distribution.Can add suitable curing agent then.
In step 430, will concentrate or be provided on the target application (that is, substrate, or resolution element or light-emitting diode or organic LED) from the solution of step 420, heating or curing form solid VSD material then.Before heating, can be shaped at the concrete application of VSD material or apply the VSD material.Have HAR particle coating or jointing metal or inorganic conductor/semi-conductive VSD material and have various application.
Fig. 5 A and Fig. 5 B are illustrated under the embodiment of the present invention, apply or how jointing metal/inorganic conductor or semi-conductive surface can reduce the filling of this type of particle with the HAR particle.Fig. 5 A is a sketch, shows how conductor and/or the semiconductor particle in the adhesive of surface-coated VSD material of carbon nano-tube.As shown in the figure, conductive compositions 500 comprises metallic 510 and metal oxide or other inorganic semiconductor particle 520 arbitrarily.Metallic 510 can have the size by diameter d 1 expression, and metal oxide particle 520 can have the size of being represented by d2.In by the embodiment shown in Fig. 5 A, the periphery or the combination of HAR particle filler 530 (for example, carbon nano-tube) and each particle 510,520.Because HAR particle filler 530 is conductions or semiconductive, effect is to have increased the size of particle 510 and 520 and do not increase the volume of those particles in the adhesive of VSD material.When occurring surpassing the voltage of character voltage level, the existence of HAR particle filler makes it possible to achieve conduction, electron transition or the tunnelling of molecule to molecule.In fact, conductive compositions 500 can be semiconductive, because conductive compositions 500 can have the characteristic of collective's conduction when the character voltage level is surmounted.
In Fig. 5 B, show the traditional VSD material that does not add the HAR particle.Metallic 502,504 is relatively closely at interval to transmit electric charge when the voltage that applies above the character voltage level.Because conductor more at interval, needs more metallic stuffing to make this device can be transformed into the conductor state.Compare by the embodiment shown in Fig. 5 A, in by the conventional method shown in Fig. 5 B, particle 510,520 by the glass particle space (for example, Cab-O-Sil) institute at interval, embodiment shown in Fig. 5 A has substituted metal volume with conductive filler 530, this conductive filler 530 be conduction, have rational physical characteristic, and have the size of abundant alternative metals.
Fig. 5 C illustrates the unordered relatively distribution of HAR particle filler (for example, carbon nano-tube), has reflected the similar result of result how the HAR particle filler produces inherently when evenly disperseing with nanoscale and obtain from the sketch of Fig. 5 A.The description of Fig. 5 C can reflect in this specification shown in Fig. 3 or other places or described embodiment.As shown in the figure, many equally distributed conductions/semiconductive HAR particle filler 530 is realized fully contacting and/or is approximate below the realization, and promptly approximate realization one is used to handle the conductive path of electric current, comprises by electron tunneling and transition.This makes and to have improved electrical characteristics and physical characteristic, especially with the adhesive that reduces the VSD material in relevant electrical characteristics and the physical characteristic of metallic stuffing.And, when particle evenly disperses with nanoscale in adhesive, need HAR particle 530 still less produce the conductivity effect of expectation.
The VSD material is used
There are many application in VSD material according to arbitrary embodiment described herein.Especially, the embodiment design is arranged on the VSD material on the substrate devices, such as printed circuit board (PCB), semiconductor packages, discrete device and more special applications, such as LED and radio-frequency devices (RFID label).Further, in other are used, can design the backboard driver that VSD material described herein is used for LCD, organic light emitting display, electrochromic display device (ECD), electrophoretic display device (EPD) or these devices.The purpose that comprises the VSD material may be the processing that improves transient state and overvoltage condition, and described transient state and overvoltage condition for example may occur with esd event.The Another application of VSD material comprises metal deposition, as described in the U.S. Patent No. 6,797,145 (by reference it being included in full) of L.Kosowsky herein.
Fig. 6 A and Fig. 6 B all illustrate the not isostructure of substrate devices, and this substrate devices utilizes according to embodiments of the present invention the VSD material to construct, and this VSD material has the high aspect ratio particles (" VSD that contains the HAR particle ") as filler.In Fig. 6 A, for example, substrate devices 600 can be corresponding to printed circuit board (PCB).In this structure, the VSD 610 that contains the HAR particle can be set on the surface 602, with the element ground connection that will be connected.As an alternative or change, Fig. 6 B illustrates a structure, and the VSD that wherein contains the HAR particle forms grounding path in the thick layer 610 of substrate.
Electroplate
Except the VSD material is included in the device that for example is used to handle esd event, one or more embodiments designs use the VSD materials to form substrate devices, comprise on the substrate trace elements (trace element) and such as the interconnection element of through hole etc.U.S. Patent No. 6,797,145 (including in full at this) have described many use VSD materials in detail and have electroplated substrate, the technology of through hole and other devices.Embodiment described herein can make the VSD material that contains the HAR particle be employed, and is described as arbitrary embodiment in this specification.
Fig. 7 shows the process that use is electroplated according to the VSD material that contains the HAR particle of the described arbitrary embodiment of Fig. 1-5.Physics that is enhanced that is provided by embodiment described herein and electrical characteristics have promoted as in U.S. Patent No. 6,797, the electroplating process described in 145.Fig. 7 has described the electroplating process simplified (as in U.S. Patent No. 6,797, described in 145), and the VSD material that uses in electroplating process is pursuant to the described arbitrary embodiment of Fig. 1 to Fig. 5.
In Fig. 7, basic electroplating technology has according to one or more embodiments of the present invention been described.In step 710, use to contain the target area patterning of the VSD material of HAR particle with device (for example substrate).For example can be by on substrate, applying continuous VSD layer, then mask is placed on this VSD layer and carries out patterning.This mask can limit the negative film figure of the electricity/trace patterns of expectation.The embodiment that substitutes also is possible.For example, the VSD material can be applied to whole zone, optionally be removed then, come out will not plan to have the zone of current-carrying element.Further, can be with the pre-patterning of VSD material on the target area.
Step 720 provides substrate has been immersed in the electrolytic solution.
Step 730 provides the voltage that will surpass the character voltage level to be applied to the pattered region of this device.Voltage application can be pulse, to continue a set period less than breakdown time.Breakdown time can be corresponding to the minimum time section, and described minimum time section is when applying given voltage, the minimum duration when finding to contain the VSD material breakdown of HAR particle.Under breakdown conditions, the VSD material that contains the HAR particle may lose its electrical characteristics, comprises its switching characteristic.The pattern of current-carrying trace and element can mate the pattern of the VSD material that contains the HAR particle substantially.In electrolytic solution, live components attracts and joins to the exposed region of the VSD material that contains the HAR particle, forms current-carrying trace and element on device.
Especially, one or more embodiments that are used for electroplating on device comprise uses the VSD material that contains the HAR particle, and this VSD material has reduced the filling of metal by use high aspect ratio particles in filler material.Compare with traditional VSD material, this preparation makes that the time of the pulse be used to carry out plating step 720 and 730 can be longer.And the use that contains the VSD material of HAR particle has increased the VSD material keeps its integration after electroplating process possibility.This means that trace elements can be provided has the intrinsic grounded capacity that can be integrated in this device.
Consistent with the embodiment of Fig. 7 is, can be applied in U.S. Patent No. 6,797 the arbitrary electroplating technology described in 145 according to the use of the VSD material of embodiment described herein.The technology that contains the VSD material plating of HAR particle by means of described utilization can (i) produce through hole on substrate devices, (ii) produce the multiaspect substrate devices that every face all has the current-carrying pattern, and/or (iii) produce the through-hole interconnection between the multiaspect substrate devices that every face all has the current-carrying pattern.
Other application
Fig. 8 is the sketch of electronic device, can be provided with the VSD material according to embodiment described herein on this electronic device.Fig. 8 illustrates device 800, and it comprises substrate 810, element 820 and comprise housing alternatively or shell 830.VSD material 805 can be included in any one or a plurality of position in many positions, and these positions are included on the surface 802, in surface below 802 (such as under its trace elements or element 820 times) or the position in the thick layer of substrate 810.Alternatively, the VSD material can be included in the housing 830.In each case, VSD material 805 can be included in like this, promptly when the voltage that surpasses the character voltage level exists, it couples with conducting element such as track lead etc.Therefore, VSD material 805 is a conducting element under the situation that has the specific voltage condition.
About arbitrary application described herein, device 800 can be a display device.For example, element 820 can be corresponding to from the luminous LED of substrate 810.Location and the structure of VSD material 805 on substrate 810 can be optionally to adapt to electrical lead, terminal (that is, inputing or outputing) or other conducting elements that is provided with light-emitting component, is used or be included into luminescent device by luminescent device.As a replacement embodiment, the VSD material can be included into the just lead-in wire of luminescent device and bear between the lead-in wire, away from substrate.Further, organic LED is used in one or more embodiment designs, and for example, the VSD material can be set under the OLED in this case.
About LED, at U.S. Patent application No.11/562, arbitrary embodiment described in 289 (they are included at this by reference) can realize with the VSD material according to arbitrary embodiment described herein, this VSD material comprises adhesive, has conduction/semiconductive HAR particle simultaneously in filler material.
Alternatively, device 800 can be corresponding to the wireless communication devices such as RFID device etc.About wireless communication devices and wireless communication unit such as RFID device (RFID) etc., the VSD material can for example be avoided overcharge or esd event by protection component 820.In the case, element 820 can be corresponding to the chip or the wireless communication unit of device.Alternatively, the use of VSD material 805 can protect other elements away from electric charge, and this electric charge can be caused by element 820.For example, element 820 can be corresponding to battery, and VSD material 805 can be used as trace elements and is provided on the surface of substrate 810 to resist the voltage condition that is caused by the battery incident.
At U.S. Patent application No.11/562, the arbitrary embodiment described in 222 (they are included at this by reference) can be by realizing according to VSD material arbitrary embodiment described herein, that comprise adhesive and have conduction/semiconductive high aspect ratio.
As a replacement embodiment or variant, element 820 can be for example corresponding to the semiconductor device that separates.VSD material 805 can be integrated with this element, perhaps is positioned in to exist under the voltage condition of connecting this material to be electrically coupled to this element.
Further, device 800 can be corresponding to packaged device, perhaps alternatively, and corresponding to the semiconductor packages that is used for the accommodating substrates element.Before substrate 810 or element 820 were comprised in device, VSD material 805 can combine with housing 830.
Conclusion
Be considered to illustrative with reference to the described embodiment of accompanying drawing, and applicant's claim should not be limited to the details of this illustrative embodiment.Various improvement and variant can be included in described embodiment, comprise feature described separately in the different illustrative embodiment is made up.Therefore, be intended that, scope of the present invention should be limited by following claim.And, anticipate, can make up with the part of other features of describing separately or other embodiments separately or as the concrete feature that the part of embodiment is described, even other features and embodiment are not mentioned this concrete feature.
Claims (37)
1. composition comprises:
Adhesive;
Conduction or semiconductive material comprise with nanoscale being dispersed in high aspect ratio (HAR) particle in the adhesive, and it is 10 or bigger aspect ratio that this HAR particle has; And
Also comprise conductor and/or semiconductor particle except that contains the material of HAR particle;
Wherein adhesive, this material and HAR particle combine the composition that has following characteristic to provide, described characteristic is: (i) when the voltage that do not exist above the character voltage level, be dielectric, and (ii) when applying the voltage that surpasses described character voltage level, conduct electricity.
2. the composition of claim 1, wherein the HAR particle evenly mixes with adhesive.
3. the composition of claim 1, wherein conductor and/or semiconductor particle and HAR particle evenly mix with adhesive.
4. the composition of claim 1, wherein the HAR particle is a carbon nano-tube.
5. the composition of claim 1, wherein the HAR particle is inorganic.
6. the composition of claim 1, wherein the HAR particle is antimony tin (ATO) nanometer rods.
7. the composition of claim 1, wherein the aspect ratio of at least some is 10 in the HAR particle
2Or 10
3Bigger.
8. the composition of claim 1, wherein at least some are nano wire in the HAR particle.
9. the composition of claim 1, wherein in the HAR particle at least some corresponding in carbon black or the carbon fiber one or more.
10. the composition of claim 1, wherein at least some are metal in the nanoscale HAR particle.
11. the composition of claim 10, wherein nanoscale HAR particle is corresponding to following one or more: copper, nickel, gold, silver, cobalt, zinc, oxide, carborundum, GaAs, aluminium oxide and aluminium nitride, titanium dioxide, antimony tin, tin indium oxide, indium zinc oxide, boron nitride, bismuth oxide, iron oxide, cerium oxide and antimony oxide zinc.
12. the composition of claim 3, wherein conductor and/or semiconductor particle comprise metal or metal composite.
13. the composition of claim 12, wherein metal composite is selected from oxide, metal nitride, metal carbides, metal boride, metal sulfide or its combination.
14. the composition of claim 3, wherein conductor and/or semiconductor particle comprise titanium compound.
15. the composition of claim 14, wherein conductor and/or semiconductor particle comprise titanium dioxide.
16. a voltage switchable dielectric material comprises the particle of some high aspect ratios (HAR), the aspect ratio that this particle has separately is 10 or bigger.
17. the voltage switchable dielectric material of claim 16 further comprises adhesive, and wherein the HAR particle is distributed in this adhesive with nanoscale.
18. the voltage switchable dielectric material of claim 16, wherein the HAR particle is corresponding to some nano wires.
19. the voltage switchable dielectric material of claim 16, wherein the HAR particle evenly mixes with adhesive.
20. the voltage switchable dielectric material of claim 16, wherein conductor and/or semiconductor particle and HAR particle evenly mix with adhesive.
21. a method of producing voltage switchable dielectric material, this method comprises:
Produce a mixture, this mixture comprises the adhesive of (i) dielectric, (ii) metal and/or semiconductor particle, and (iii) conduct electricity or semiconductive material, it comprises with nanoscale and is dispersed in high aspect ratio (HAR) particle in the adhesive, wherein produce mixture and comprise the use adhesive, metal and/or semiconductor particle and comprise the conduction of HAR particle or semiconductive material each some, so that when solidified, this mixture is (i) dielectric, when the voltage that do not exist above the character voltage level, and (i) conduct electricity, when having the voltage that surpasses the character voltage level; And
Solidify this mixture.
22. the method for claim 21 further comprises this mixture is applied to target location on the device, and wherein solidifies this mixture and be included in the target location and solidify this mixture.
23. the method for claim 21, comprising the conduction of HAR particle or semiconductive material corresponding to carbon nano-tube.
24. the method for claim 21, wherein metal and/or semiconductor particle are selected from copper, silver, gold, aluminium, nickel and steel, silicon, carborundum, boron nitride, aluminium nitride, nickel oxide, zinc oxide, bismuth oxide, iron oxide, cerium oxide and zinc sulphide.
25. the method for claim 21, wherein metal and/or semiconductor particle comprise titanium compound.
26. the method for claim 21, wherein metal and/or semiconductor particle comprise a kind of in titanium dioxide, titanium diboride or the titanium nitride.
27. the method for claim 21 is wherein produced mixture and is included in even hybrid metal and/or semiconductor particle and HAR particle in this mixture.
28. the method for claim 24 is wherein evenly mixed and is comprised that the use sound wave stirs.
29. a voltage switchable dielectric material, it is formed by following steps:
Produce mixture, it comprises the adhesive of (i) dielectric, (ii) metal and/or semiconductor particle, and (iii) conduct electricity or semiconductive material, it comprises with nanoscale and is dispersed in high aspect ratio (HAR) particle in the adhesive, wherein produce mixture and comprise the conduction using adhesive, metal and/or semiconductor particle and comprise the HAR particle or semiconductive material each some, so that when solidified, this mixture is (i) dielectric, when the voltage that do not exist above the character voltage level, and (i) conduct electricity, when having the voltage that surpasses the character voltage level; And
Solidify this mixture.
30. the voltage switchable dielectric material of claim 29, comprising the conduction of HAR particle or semiconductive material corresponding to carbon nano-tube.
31. the voltage switchable dielectric material of claim 29, wherein metal and/or semiconductor particle are selected from copper, silver, gold, aluminium, nickel and steel, silicon, carborundum, boron nitride, aluminium nitride, nickel oxide, zinc oxide and zinc sulphide.
32. the voltage switchable dielectric material of claim 29, wherein metal and/or semiconductor particle comprise titanium compound.
33. the voltage switchable dielectric material of claim 29, wherein metal and/or semiconductor particle comprise a kind of in titanium dioxide, titanium diboride or the titanium nitride.
34. the voltage switchable dielectric material of claim 29 is wherein produced mixture and is included in even hybrid metal and/or semiconductor particle and HAR particle in this mixture.
35. the voltage switchable dielectric material of claim 29 wherein evenly mixes and comprises use sound wave blender.
36. an electronic device, it comprises according to each the described composition among the claim 1-15.
37. the electronic device of claim 36, wherein this device is selected from discrete device, semiconductor packages, display device or backboard, light-emitting diode, and RFID device.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82078606P | 2006-07-29 | 2006-07-29 | |
| US60/820,786 | 2006-07-29 | ||
| US60/826,746 | 2006-09-24 | ||
| US11/562,222 | 2006-11-21 | ||
| US11/562,289 | 2006-11-21 | ||
| US60/949,179 | 2007-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101496113A true CN101496113A (en) | 2009-07-29 |
Family
ID=40925471
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800286079A Pending CN101496113A (en) | 2006-07-29 | 2007-07-29 | Voltage switchable dielectric material having high aspect ratio particles |
| CN2007800286172A Expired - Fee Related CN101496114B (en) | 2006-07-29 | 2007-07-29 | Voltage switchable dielectric material having conductive or semi-conductive organic material |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800286172A Expired - Fee Related CN101496114B (en) | 2006-07-29 | 2007-07-29 | Voltage switchable dielectric material having conductive or semi-conductive organic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN101496113A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409422A (en) * | 2011-12-20 | 2012-04-11 | 中原工学院 | Method for preparing antistatic polyacrylonitrile fibers from double-component nano electroconductive agent |
| CN102409421A (en) * | 2011-12-20 | 2012-04-11 | 中原工学院 | Preparation method of carbon nanotubes/nano ATO (antimony tin oxide)/polypropylene electroconductive fibers |
| CN102982932A (en) * | 2012-12-20 | 2013-03-20 | 武汉芯宝科技有限公司 | Voltage induction variable resistance film envelope capable of absorbing instant electric pulse energy as well as manufacturing method and application of film |
| CN103081262A (en) * | 2010-08-26 | 2013-05-01 | 松下电器产业株式会社 | Overvoltage protection component, and overvoltage protection material for overvoltage protection component |
| CN108546542A (en) * | 2018-07-05 | 2018-09-18 | 合肥萃励新材料科技有限公司 | A kind of printed wiring board PESD adhesive |
| CN108893065A (en) * | 2018-07-05 | 2018-11-27 | 合肥萃励新材料科技有限公司 | A kind of preparation method of ESD function hot melt adhesive |
| CN108893060A (en) * | 2018-07-02 | 2018-11-27 | 合肥萃励新材料科技有限公司 | A kind of preparation method of PESD function light-sensitive emulsion |
| CN108913085A (en) * | 2018-07-05 | 2018-11-30 | 合肥萃励新材料科技有限公司 | A kind of synthetic method of ESD function PI glue stick |
| CN108913086A (en) * | 2018-07-05 | 2018-11-30 | 合肥萃励新材料科技有限公司 | A kind of preparation method for sticking copper foil PESD adhesive |
| CN108913084A (en) * | 2018-07-05 | 2018-11-30 | 合肥萃励新材料科技有限公司 | A kind of preparation method of polyurethane PESD function adhesive |
| CN109054717A (en) * | 2018-07-02 | 2018-12-21 | 合肥萃励新材料科技有限公司 | A kind of synthesis technology of PESD function water-based polyurethane adhesive |
| CN109054660A (en) * | 2018-07-02 | 2018-12-21 | 合肥萃励新材料科技有限公司 | A kind of preparation method of PESD function adhesive |
| CN109082257A (en) * | 2018-07-05 | 2018-12-25 | 合肥萃励新材料科技有限公司 | A kind of wet dual-purpose solidification glue of PESD function light |
| CN109111895A (en) * | 2018-07-05 | 2019-01-01 | 合肥萃励新材料科技有限公司 | A kind of organic silicon adhesive of PESD function |
| CN109135641A (en) * | 2018-07-05 | 2019-01-04 | 合肥萃励新材料科技有限公司 | A kind of preparation method of ESD function epoxy glue |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2561609B (en) * | 2017-04-21 | 2019-12-18 | Peratech Holdco Ltd | Method of producing agglomerates for inclusion in a composite material |
| CN107936249B (en) * | 2017-12-07 | 2020-04-17 | 陕西科技大学 | Preparation method of titanium dioxide nanowire and polyimide composite nano dielectric |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3625467B2 (en) * | 2002-09-26 | 2005-03-02 | キヤノン株式会社 | Electron emitting device using carbon fiber, electron source, and method of manufacturing image forming apparatus |
-
2007
- 2007-07-29 CN CNA2007800286079A patent/CN101496113A/en active Pending
- 2007-07-29 CN CN2007800286172A patent/CN101496114B/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103081262A (en) * | 2010-08-26 | 2013-05-01 | 松下电器产业株式会社 | Overvoltage protection component, and overvoltage protection material for overvoltage protection component |
| US9001485B2 (en) | 2010-08-26 | 2015-04-07 | Panasonic Intellectual Property Management Co., Ltd. | Overvoltage protection component, and overvoltage protection material for overvoltage protection component |
| CN102409421A (en) * | 2011-12-20 | 2012-04-11 | 中原工学院 | Preparation method of carbon nanotubes/nano ATO (antimony tin oxide)/polypropylene electroconductive fibers |
| CN102409422B (en) * | 2011-12-20 | 2013-07-03 | 中原工学院 | Method for preparing antistatic polyacrylonitrile fibers from double-component nano electroconductive agent |
| CN102409421B (en) * | 2011-12-20 | 2013-07-03 | 中原工学院 | Preparation method of carbon nanotubes/nano ATO (antimony tin oxide)/polypropylene electroconductive fibers |
| CN102409422A (en) * | 2011-12-20 | 2012-04-11 | 中原工学院 | Method for preparing antistatic polyacrylonitrile fibers from double-component nano electroconductive agent |
| CN102982932A (en) * | 2012-12-20 | 2013-03-20 | 武汉芯宝科技有限公司 | Voltage induction variable resistance film envelope capable of absorbing instant electric pulse energy as well as manufacturing method and application of film |
| CN109054717A (en) * | 2018-07-02 | 2018-12-21 | 合肥萃励新材料科技有限公司 | A kind of synthesis technology of PESD function water-based polyurethane adhesive |
| CN109054660A (en) * | 2018-07-02 | 2018-12-21 | 合肥萃励新材料科技有限公司 | A kind of preparation method of PESD function adhesive |
| CN108893060A (en) * | 2018-07-02 | 2018-11-27 | 合肥萃励新材料科技有限公司 | A kind of preparation method of PESD function light-sensitive emulsion |
| CN108893065A (en) * | 2018-07-05 | 2018-11-27 | 合肥萃励新材料科技有限公司 | A kind of preparation method of ESD function hot melt adhesive |
| CN108913086A (en) * | 2018-07-05 | 2018-11-30 | 合肥萃励新材料科技有限公司 | A kind of preparation method for sticking copper foil PESD adhesive |
| CN108913084A (en) * | 2018-07-05 | 2018-11-30 | 合肥萃励新材料科技有限公司 | A kind of preparation method of polyurethane PESD function adhesive |
| CN108913085A (en) * | 2018-07-05 | 2018-11-30 | 合肥萃励新材料科技有限公司 | A kind of synthetic method of ESD function PI glue stick |
| CN108546542A (en) * | 2018-07-05 | 2018-09-18 | 合肥萃励新材料科技有限公司 | A kind of printed wiring board PESD adhesive |
| CN109082257A (en) * | 2018-07-05 | 2018-12-25 | 合肥萃励新材料科技有限公司 | A kind of wet dual-purpose solidification glue of PESD function light |
| CN109111895A (en) * | 2018-07-05 | 2019-01-01 | 合肥萃励新材料科技有限公司 | A kind of organic silicon adhesive of PESD function |
| CN109135641A (en) * | 2018-07-05 | 2019-01-04 | 合肥萃励新材料科技有限公司 | A kind of preparation method of ESD function epoxy glue |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101496114A (en) | 2009-07-29 |
| CN101496114B (en) | 2012-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101496113A (en) | Voltage switchable dielectric material having high aspect ratio particles | |
| US7968010B2 (en) | Method for electroplating a substrate | |
| US7695644B2 (en) | Device applications for voltage switchable dielectric material having high aspect ratio particles | |
| EP2054897B1 (en) | Voltage switchable dielectric material having high aspect ratio particles | |
| US20080032049A1 (en) | Voltage switchable dielectric material having high aspect ratio particles | |
| US20080035370A1 (en) | Device applications for voltage switchable dielectric material having conductive or semi-conductive organic material | |
| CN101536190A (en) | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same | |
| US8206614B2 (en) | Voltage switchable dielectric material having bonded particle constituents | |
| US20080029405A1 (en) | Voltage switchable dielectric material having conductive or semi-conductive organic material | |
| CN101796219A (en) | Voltage switchable dielectric material incorporating modified high aspect ratio particles | |
| CN102361920A (en) | Dielectric composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1130938 Country of ref document: HK |
|
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20090729 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1130938 Country of ref document: HK |