CN101494728B - Method for eliminating noise - Google Patents

Method for eliminating noise Download PDF

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Publication number
CN101494728B
CN101494728B CN2009100075219A CN200910007521A CN101494728B CN 101494728 B CN101494728 B CN 101494728B CN 2009100075219 A CN2009100075219 A CN 2009100075219A CN 200910007521 A CN200910007521 A CN 200910007521A CN 101494728 B CN101494728 B CN 101494728B
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China
Prior art keywords
noise
ground
voltage
power supply
sampling
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CN2009100075219A
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CN101494728A (en
Inventor
W·徐
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Omnivision Technologies Inc
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Eastman Kodak Co
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767Horizontal readout lines, multiplexers or registers

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)

Abstract

The present invention relates to a method to dispel or basically dispel noise, wherein the noise is generated by a first power supply, a first voltage bias and a first ground that associated with pixel in an image sensor. The method comprises the following steps: generating reference voltage in sampling and retaining circuit that can be operated as connected with the pixel, wherein the reference voltage comprises noise in same or almost same quantity with noise generated by a second power supply, a second voltage, and a second ground bias and a first power supply, a first voltage bias and a first ground that can be used single or combined, wherein the second power supply, second voltage bias and the second ground is related with dark reference, and when reading diaplasis signal and image signal from the sampling and retaining circuit, dispel or basically dispel noise generated by the first power supply, the first voltage bias and the first ground.

Description

Be used to eliminate the method for noise
The present invention is to be that on April 27th, 2005, application number are divided an application for " low noise sample and holding circuit " application for " 200580013653.2 ", former denomination of invention the applying date.
Technical field
The present invention relates generally to field of image sensors, more specifically, relate to a kind of method and apparatus of generation that be used to remove from the unwanted noise of imageing sensor.
Background technology
As known technically, digital camera comprises the imageing sensor of the electronic representation that is used to catch scenery.As most of electronic installations, in imageing sensor, produced the unwanted noise that reduces picture quality.Obviously, wish to remove this noise and improve picture quality.
Therefore, need a kind of method and apparatus that is used to remove this unwanted noise.
Summary of the invention
The present invention is intended to overcome the one or more problems that propose above.Summarize briefly, according to an aspect of the present invention, the invention reside in a kind of imageing sensor, comprise that (a) is used to catch a plurality of pixels of the incident light of the signal that is converted into presentation video; Wherein noise combines with the signal of presentation video and reset level; (b) produce a plurality of dark reference pixel of noise, the noise basically identical in this noise and image and the reset level or consistent in the same manner; (c) sampling and holding circuit, the noise from picture signal and reset level is eliminated or eliminated substantially to its reading images signal and by use producing from the noise removing of this dark reference pixel noise from image and reset level.
According to a further aspect in the invention, the invention reside in a kind of method that is used to eliminate or eliminate basically noise, this noise is by first power supply related with the pixel in the imageing sensor, first bias voltage and first ground produce, the method comprising the steps of: produce reference voltage in being operable as the sampling that is connected with described pixel and holding circuit, this reference voltage comprises and uses second source alone or in combination, second bias voltage and second ground produce with by first power supply, the noise of the identical or substantially the same quantity of the noise that first bias voltage and first ground produce, this second source, second bias voltage is related with the dark reference pixel in being arranged on this sampling and holding circuit with second ground; And when read reset signal and picture signal from described sampling and holding circuit, eliminate or eliminate basically the noise that produces by first power supply, first bias voltage and first ground.
By the detailed description of following preferred embodiment and claims, and with reference to accompanying drawing, these and other aspects of the present invention, purpose, feature and advantage will more be expressly understood and be estimated.
The beneficial effect of the invention
The present invention has the advantage of the unwanted noise that elimination produces in the pixel of imageing sensor.
Description of drawings
Fig. 1 is the top view of imageing sensor of the present invention and its be associated sampling and holding circuit;
Fig. 2 detail drawing that to be pixel be connected with holding circuit with it and sampling;
Fig. 3 is the perspective view that is used to illustrate for the camera of the typical commercial embodiment of imageing sensor of the present invention.
Embodiment
With reference to figure 1, show imageing sensor 10 with a plurality of pixels 20 of arranging with predetermined array.A plurality of samplings and holding circuit 30 are connected respectively to the one-row pixels 20 (sampling and holding circuit 30 be used for each row pixel) of imageing sensor 10, are used to read the value from pixel 20 samplings.Sampling and holding circuit 30 also comprise dark reference pixel 40, and it will go through below.Operational amplifier 50 is connected to sampling and holding circuit 30, is used to change and amplifies from sampling and the signal of holding circuit 30.
With reference to figure 2, show pixel 20 of the present invention and the sampling of its collocation and the detail drawing of holding circuit 30.Each pixel 20 comprises the photosensitive region that receives the incident light (representing with arrow) that is converted into charge packet, and for example photodiode 60.Transmission gate 70 is optionally activated electric charge is transferred to charge conversion from photodiode 60 is the unsteady diffused capacitor 80 of voltage signal.Reset gate 90 plays the electric charge that consumes self-relocation diffused capacitor 80 function of diffused capacitor 80 to predetermined charge level of floating that reset.Source follower transistor 100 is connected to floats diffused capacitor 80 and plays the function of amplifying the signal that comes self-relocation diffused capacitor 80.
For read reset signal and actual picture signal, activate row selecting switch 110 allow to represent the to float voltage signal of reset level of diffused capacitor 80 and be transferred to sampling and holding circuit capacitor 120.In this, for transmitting this signal to capacitor 120, Closing Switch S 1And S 3Be used for capacitor 120 is charged to level corresponding to reset voltage level.Switch S then 1And S 3Be closed.Should notice clearly that capacitor 120 and 130 their signals of storage are known as electric charge technically.As following description, capacitor 120 charge stored will be read operational amplifier 50 (referring to Fig. 1).
Notice that unwanted noise produces from power supply 140 with it should also be clear that, ground 150 and bias voltage 160, and this unwanted noise appears at the node Vi place of row selecting transistor 110.Significantly, this noise had not only mixed with actual image signal but also with the reset image signal.As a result, as following description, the present invention has eliminated this noise during reading.
In this, dark reference pixel 40 is used to produce reference voltage, and this reference voltage comprises and produces from power supply 140 noise of the noise same amount of ground 150 and bias voltage 160 or the noise of basic identical amount.In other words, the power supply 170 of dark reference pixel 40, ground 180 and bias voltage 190 duplicate or have duplicated substantially the noise of pixel.This noise removing of dark reference pixel 40 at the noise that resets and image produces during reading.Significantly, this to be achieved be because the voltage on two capacitors 120 and 130 is charged with the voltage that comprises the pixel of identical or basic identical noisiness from it from the voltage of dark reference pixel and is associated in time so that this noise is eliminated or is eliminated substantially on capacitor 120 and 130.
For the actual image signal of sampling, Closing Switch S2 and S4 are charged to capacitor 130 and come the expression of self-relocation diffused capacitor 80 from the corresponding level of the sensing voltage of the sensing signal of photodiode 60.Open switch S 2 and S4 then.Closing Switch S5, S6, S7 and S8 read the electric charge from capacitor 120 and 130 respectively.Note, the signal indication reset level on the capacitor 120, the signal indication on the capacitor 130 is used for the actual signal of image.Power supply 140 as mentioned above, as to mix with picture signal and reset signal, the corresponding noise removing of the dark reference pixel 40 of noise quilt of ground 150 and bias voltage 160.
The output that operational amplifier 50 (referring to Fig. 1) is connected to switch S 5, S6, S7 and S8 come the expression reset signal of self-capacitance device 120 in the future and 130 and actual image signal sense charge be converted to the voltage signal of amplification.
With reference to figure 3, show the perspective view of the camera of ordinary consumer custom use, be used to illustrate typical commercial embodiment for imageing sensor 10 of the present invention and sampling and holding circuit 30.
The parts tabulation
10 imageing sensors
20 pixels
30 sampling and holding circuits
40 dark reference pixels
50 operational amplifiers
60 photodiodes
70 transmission gates
80 unsteady diffused capacitors
90 reset gates
100 source followers
110 row selecting transistors/switch
120 sampling and holding circuit capacitors
130 picture signal capacitors
140 power supplys
150 ground
160 bias voltages
170 power supplys
180 ground
190 bias voltages
200 cameras

Claims (2)

1. method that is used to eliminate or eliminate basically noise, this noise is produced by first power supply related with the pixel in the imageing sensor, first bias voltage and first ground, and the method comprising the steps of:
In being operable as the sampling that is connected with described pixel and holding circuit, produce reference voltage, this reference voltage comprises the noise of the identical or substantially the same quantity of the noise with being produced by first power supply, first bias voltage and first ground that uses second source, second bias voltage and second ground to produce, and this second source, second bias voltage and second ground are related with the dark reference pixel in being arranged on this sampling and holding circuit; And
When read reset signal and picture signal from described sampling and holding circuit, eliminate or eliminate basically the noise that produces by first power supply, first bias voltage and first ground.
2. method according to claim 1 also comprises step: the voltage signal that the reset signal that read and picture signal are converted to amplification.
CN2009100075219A 2004-04-30 2005-04-27 Method for eliminating noise Active CN101494728B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/836884 2004-04-30
US10/836,884 US7385636B2 (en) 2004-04-30 2004-04-30 Low noise sample and hold circuit for image sensors

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800136532A Division CN100479498C (en) 2004-04-30 2005-04-27 Image senser comprising low noise sample and hold circuit, and a camera

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CN101494728A CN101494728A (en) 2009-07-29
CN101494728B true CN101494728B (en) 2011-04-06

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CNB2005800136532A Active CN100479498C (en) 2004-04-30 2005-04-27 Image senser comprising low noise sample and hold circuit, and a camera

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US (1) US7385636B2 (en)
EP (1) EP1741287A1 (en)
JP (1) JP4682191B2 (en)
KR (1) KR101143094B1 (en)
CN (2) CN101494728B (en)
TW (1) TWI363561B (en)
WO (1) WO2005117418A1 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3962829B2 (en) * 2003-08-22 2007-08-22 カシオ計算機株式会社 Display device, display method, and display program
US7372493B2 (en) * 2004-07-12 2008-05-13 Micron Technology, Inc. Column-wise clamp voltage driver for suppression of noise in an imager
US20060187329A1 (en) * 2005-02-24 2006-08-24 Micron Technology, Inc. Clamped capacitor readout noise rejection circuit for imagers
US7701493B2 (en) * 2005-02-28 2010-04-20 Micron Technology, Inc. Imager row-wise noise correction
US7916186B2 (en) 2005-04-07 2011-03-29 Micron Technology, Inc. Anti-eclipse circuitry with tracking of floating diffusion reset level
KR100746197B1 (en) * 2005-12-08 2007-08-06 삼성전자주식회사 Reference voltage generator, column analog to digital conversion device, and image censor for eliminating power supply and switching noise in image sensor, and method thereof
US7864229B2 (en) * 2005-12-08 2011-01-04 Samsung Electronics Co., Ltd. Analog to digital converting device and image pickup device for canceling noise, and signal processing method thereof
US7652706B2 (en) * 2006-02-15 2010-01-26 Eastman Kodak Company Pixel analog-to-digital converter using a ramped transfer gate clock
US7593050B2 (en) * 2006-02-27 2009-09-22 Eastman Kodak Company Delay management circuit for reading out large S/H arrays
WO2008150283A1 (en) * 2007-05-21 2008-12-11 Micron Technology, Inc. Suppression of row-wise noise in cmos image sensors
TWI401944B (en) * 2007-06-13 2013-07-11 Novatek Microelectronics Corp Noise cancellation device for an image signal processing system
US7755689B2 (en) * 2007-10-05 2010-07-13 Teledyne Licensing, Llc Imaging system with low noise pixel array column buffer
US8482639B2 (en) * 2008-02-08 2013-07-09 Omnivision Technologies, Inc. Black reference pixel for backside illuminated image sensor
JP5426220B2 (en) * 2009-04-13 2014-02-26 株式会社東芝 Power supply noise elimination circuit
US8411184B2 (en) * 2009-12-22 2013-04-02 Omnivision Technologies, Inc. Column output circuits for image sensors
US8233066B2 (en) * 2010-02-18 2012-07-31 Omnivision Technologies, Inc. Image sensor with improved black level calibration
CN102316280B (en) * 2010-06-30 2013-09-04 格科微电子(上海)有限公司 Image sensor and method for eliminating power supply noises of image sensor
US8338856B2 (en) 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
US8830361B2 (en) 2012-04-12 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing column fixed pattern noise
KR102155480B1 (en) * 2014-07-07 2020-09-14 삼성전자 주식회사 Image sensor, image processing system including the same, and mobile electronic device including the same
CN104703096B (en) * 2015-02-28 2018-08-31 联想(北京)有限公司 A kind of method of canceling noise and electronic equipment
US9960783B2 (en) 2015-09-18 2018-05-01 Taiwan Semiconductor Manufacturing Company Ltd. Conditional correlated multiple sampling single slope analog-to-digital converter, and associated image sensor system and method
US9967496B2 (en) * 2016-06-30 2018-05-08 Sony Corporation Active reset circuit for reset spread reduction in single-slope ADC
EP3598739B1 (en) 2018-04-13 2021-08-04 Shenzhen Goodix Technology Co., Ltd. Image sensing circuit and control method thereof
WO2022011615A1 (en) * 2020-07-15 2022-01-20 深圳市汇顶科技股份有限公司 Image sensor, image generation method, and electronic device
CN111885323B (en) * 2020-07-15 2023-03-14 深圳市汇顶科技股份有限公司 Image sensor, image generation method and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144444A (en) * 1991-06-05 1992-09-01 Eastman Kodak Company Method and apparatus for improving the output response of an electronic imaging system
CN1256469A (en) * 1998-07-01 2000-06-14 菱光科技股份有限公司 Silicon pair contacting image sensor chip with line transferring and pixel reading out structure
CN1481147A (en) * 2002-07-25 2004-03-10 ��ʿͨ��ʽ���� Image sensor of providing improved image quality

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649430A (en) * 1985-08-27 1987-03-10 Texas Instruments, Incorporated CCD imager with many dummy pixels
US5086344A (en) * 1990-05-11 1992-02-04 Eastman Kodak Company Digital correlated double sampling circuit for sampling the output of an image sensor
US5329312A (en) * 1992-08-17 1994-07-12 Eastman Kodak Company DC level control circuitry for CCD images
US5467130A (en) * 1994-10-28 1995-11-14 Eastman Kodak Company Ground driven delay line correlator
US5933189A (en) * 1995-03-09 1999-08-03 Nikon Corporation Solid state image pickup apparatus
JP3031606B2 (en) * 1995-08-02 2000-04-10 キヤノン株式会社 Solid-state imaging device and image imaging device
DE69624714T2 (en) * 1995-08-11 2003-08-07 Toshiba Kawasaki Kk IMAGE RECORDING SYSTEM, INTEGRATED SOLID IMAGE RECORDING SEMICONDUCTOR CIRCUIT
US5892540A (en) * 1996-06-13 1999-04-06 Rockwell International Corporation Low noise amplifier for passive pixel CMOS imager
US6674470B1 (en) * 1996-09-19 2004-01-06 Kabushiki Kaisha Toshiba MOS-type solid state imaging device with high sensitivity
GB2318473B (en) * 1996-10-17 2000-11-29 Sony Corp Solid state imaging device,signal processing method and camera
EP1000506A1 (en) 1997-07-31 2000-05-17 PPT Vision, Inc. Digital correlated double sample camera
US6963372B1 (en) * 1998-04-24 2005-11-08 Canon Kabushiki Kaisha Solid-state image sensing apparatus and method of operating the same
US6720999B1 (en) * 1999-03-31 2004-04-13 Cirrus Logic, Inc. CCD imager analog processor systems and methods
US7053941B1 (en) * 1999-08-19 2006-05-30 Canon Kabushiki Kaisha Image input apparatus
JP4908668B2 (en) * 2000-04-19 2012-04-04 キヤノン株式会社 Focus detection device
JP3897520B2 (en) * 2000-07-11 2007-03-28 キヤノン株式会社 IMAGING DEVICE AND IMAGING DEVICE CONTROL METHOD
US6940551B2 (en) * 2000-09-25 2005-09-06 Foveon, Inc. Active pixel sensor with noise cancellation
US6919551B2 (en) * 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
US7046284B2 (en) * 2003-09-30 2006-05-16 Innovative Technology Licensing Llc CMOS imaging system with low fixed pattern noise

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144444A (en) * 1991-06-05 1992-09-01 Eastman Kodak Company Method and apparatus for improving the output response of an electronic imaging system
CN1256469A (en) * 1998-07-01 2000-06-14 菱光科技股份有限公司 Silicon pair contacting image sensor chip with line transferring and pixel reading out structure
CN1481147A (en) * 2002-07-25 2004-03-10 ��ʿͨ��ʽ���� Image sensor of providing improved image quality

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平6-237471A 1994.08.23

Also Published As

Publication number Publication date
TWI363561B (en) 2012-05-01
US20050243194A1 (en) 2005-11-03
EP1741287A1 (en) 2007-01-10
US7385636B2 (en) 2008-06-10
WO2005117418A1 (en) 2005-12-08
JP4682191B2 (en) 2011-05-11
KR101143094B1 (en) 2012-05-10
CN100479498C (en) 2009-04-15
CN101494728A (en) 2009-07-29
KR20070007860A (en) 2007-01-16
TW200605651A (en) 2006-02-01
JP2007535871A (en) 2007-12-06
CN1951104A (en) 2007-04-18

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