CN105791716B - CMOSTDI imaging sensors and its control method - Google Patents
CMOSTDI imaging sensors and its control method Download PDFInfo
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- CN105791716B CN105791716B CN201610135831.9A CN201610135831A CN105791716B CN 105791716 B CN105791716 B CN 105791716B CN 201610135831 A CN201610135831 A CN 201610135831A CN 105791716 B CN105791716 B CN 105791716B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
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Abstract
The present invention relates to a kind of CMOSTDI imaging sensors, 2 grades of CMOS TDI imaging sensors, first, second pixel of each column has separate photodiode, for two pixels altogether there are one charge transfer region and charge amplification module, the charge that two pixel exposures generate exports a corresponding voltage signal after charge transfer region is cumulative by charge amplification module.Due to realizing that charge is cumulative in Pixel-level, additional noise, 2 times of signal boost, then signal-to-noise ratio equally 2 times of promotion are not introduced.M grades of CMOSTDI imaging sensors, each repetitive unit include two row pixels；The first, second pixel of each column of each repetitive unit shares a charge transfer region and a charge amplification module, and corresponding voltage signal is exported by charge amplification module after the charge that the first, second pixel exposure generates is cumulative in charge transfer region；Noise is only promotedTimes, the more traditional M grades of TDI of noise is promotedTimes.
Description
Technical field
The invention belongs to TDI image sensor technologies fields, and in particular to a kind of CMOSTDI imaging sensors and its control
Method.
Background technology
Time delays integral (Time Delay Integration, abbreviation TDI) imaging sensor is linear image sensing
A kind of differentiation of device.Imaging mechanism is exposed line by line for the pixel passed through to shooting object, and exposure results are added up, to
Solve the problems, such as that the imaging signal caused by high-speed moving object time for exposure deficiency is weak.TDI imaging sensors can increase effectively
Time for exposure improves signal noise ratio (snr) of image.
TDI imaging sensors are divided into two kinds of CCD and CMOS, since the imaging mechanism and ccd image sensor charge of TDI turn
Telephone-moving reason is consistent, and traditional TDI imaging sensors are generally used the manufacture of CCD techniques.It is lossless that charge may be implemented in the CCD TDI
It shifts and adds up, do not introduce additional noise.If charge is M grades cumulative (the TDI imaging sensors with M rows), signal-to-noise ratio carries
Rise M times.However due to the particularity of CCD techniques, other processing circuits can not be integrated on the image sensor, versatility and flexibly
Property is poor.
Another TDI imaging sensor is CMOS types, and basic framework is as shown in Figure 1.The TDI imaging sensors are based on
Universal CMOS manufacturing process, each pixel correspond to a charge transfer region, and the charge for being transferred to the area amplifies by a charge
Module is converted to voltage signal.Film speed is consistent with object gait of march line by line for sensor array, and often row pixel exports one
Voltage signal.All M line output voltages signals are cumulative, and for M grades of TDI imaging sensors, M times of signal boost, but voltage domain is made an uproar
Sound is also promoted therewithTimes, thus signal-to-noise ratio is only promotedTimes.In addition to this, it is required for reading more due to exposing each time
Capable information of voltage adds up, and increases the complexity of reading circuit design.
Invention content
The technical problem to be solved in the present invention is to provide a kind of CMOSTDI imaging sensors and its control method, the images
Sensor is based on universal CMOS manufacturing process, and the lossless transfer of charge may be implemented, and does not introduce additional noise, improves signal-to-noise ratio.
In order to solve the above-mentioned technical problem, following two kinds of technical sides may be used in CMOSTDI imaging sensors of the invention
Case.
Technical solution one
The CMOSTDI imaging sensors of the present invention include two row pixels, and the first, second pixel P1, P2 of wherein each column is total
With a charge transfer region and charge amplification module；The charge that the exposure of first, second pixel P1, P2 generates is in charge transfer region
Corresponding voltage signal is exported by charge amplification module after cumulative.
The control method of above-mentioned CMOSTDI imaging sensors is as follows：
One, set object by N1, N2 ..., Nn it is total n part form, in the t1 periods, N1 moves to the first pixel P1's
Imaging area, the first pixel P1 are exposed N1；
Two, before t1 terminates, stop exposing, in the first pixel P1 in the exposure electric charge transfer to charge transfer region of N1；
Three, in the t2 periods, N2 moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to N2
Light, while N1 moves to the imaging area of the second pixel P2, the second pixel P2 carries out second to N1 and exposes；
Four, before t2 terminates, the exposure charge of N1 in the second pixel P2 is shifted first to charge transfer region, with the t1 periods
The exposure charge of N1 is cumulative, is then read 2 grades of charge accumulation results of N1 by charge amplification module；
Five, charge transfer region is resetted, then shifts the exposure charge of N2 in the first pixel P1 to charge transfer region；
Six, in the t3 periods, N3 moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to N3
Light, while N2 moves to the imaging area of the second pixel P2, the second pixel P2 carries out second to N2 and exposes；
Seven, before t3 terminates, the exposure charge of N2 in the second pixel P2 is shifted first to charge transfer region, with the t2 periods
The exposure charge of N2 is cumulative, is then read 2 grades of charge accumulation results of N2 by charge amplification module；
Eight, charge transfer region is resetted, then shifts the exposure charge of N3 in the first pixel P1 to charge transfer region；
Nine, and so on, 2 grades of charge accumulation results of Nn are finally obtained at the end of tn+1.
By above-mentioned steps, the corresponding voltage value of 12 grades of charge accumulation result of Nn part of object is finally obtained.
First, second pixel of 2 grades of CMOSTDI imaging sensor each columns of the present invention has two pole of separate photoelectricity
Pipe, there are one charge transfer region and charge amplification modules altogether for two pixels, and the charge that two pixel exposures generate is in electric charge transfer
A corresponding voltage signal is exported by charge amplification module after area is cumulative.
For traditional 2 grades of CMOS TDI imaging sensors, 2 grades of signals are accumulated in voltage domain realization, are passed compared to common linear array
Sensor, 2 times of signal boost, noise and increasingTimes, signal-to-noise ratio is promotedTimes.The present invention due to realizing that charge is cumulative in Pixel-level,
Do not introduce additional noise, 2 times of signal boost, then signal-to-noise ratio equally 2 times of promotion.
For two-stage TDI imaging sensors, specific pixel structure can there are many selections, as long as can carry out adjacent
The double exposure charge Pixel-level of two row pixels is cumulative, realizes TDI working methods, i.e., within the protection scope of the present invention.
Further, CMOSTDI imaging sensors of the invention further include laterally overflowing grid construction of switch；Charge transfer region FD
It is connected with electric charge storage region by laterally overflowing grid construction of switch.
The grid construction of switch that laterally overflows is made of a switching transistor M, the source electrode connection electricity of switching transistor M
Lotus transition range FD, drain electrode pass through storage capacitance C connection power grounds or any stabilized power source current potential；Storage capacitance C is as charge
Memory block.
The control method of above-mentioned CMOSTDI imaging sensors is as follows：
One, grid construction of switch half will be laterally overflowed first to be connected, if object by N1, N2 ..., total n of Nn partly form,
In the t1 periods, N1 moves to the imaging area of the first pixel P1, and the first pixel P1 is exposed N1；
Two, before t1 terminates, stop exposing, in the first pixel P1 in the exposure electric charge transfer to charge transfer region of N1, when
When light exposure is smaller, charge storage is all exposed in charge transfer region, when light exposure is larger, extra exposure charge is spilt into
In electric charge storage region；
Three, in the t2 periods, N2 moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to N2
Light, while N1 moves to the imaging area of the second pixel P2, the second pixel P2 carries out second to N1 and exposes；
Four, before t2 terminates, the exposure charge of N1 in the second pixel P2 is shifted first to charge transfer region, with the t1 periods
The exposure charge of N1 is cumulative, and excess charge will be spilled over to by laterally overflowing gate groove in electric charge storage region；Amplified by charge
Module reads the high gain signal of charge transfer region；It finally will laterally overflow grid construction of switch to be closed, mould amplified by charge
Block reads the low gain signal results after charge transfer region and electric charge storage region are redistributed；
Five, charge transfer region and electric charge storage region are resetted, will laterally overflows grid construction of switch half and be connected, then turns
The exposure charge of N2 in the first pixel P1 is moved to charge transfer region；
Six, in the t3 periods, N3 moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to N3
Light, while N2 moves to the imaging area of the second pixel P2, the second pixel P2 carries out second to N2 and exposes；
Seven, before t3 terminates, the exposure charge of N2 in the second pixel P2 is shifted first to charge transfer region, with the t2 periods
The exposure charge of N2 is cumulative, and excess charge will be spilled over to by laterally overflowing gate groove in electric charge storage region；Amplified by charge
Module reads the high gain signal of charge transfer region；It finally will laterally overflow grid construction of switch to be closed, mould amplified by charge
Block reads the low gain signal results after charge transfer region and electric charge storage region are redistributed；
Eight, charge transfer region and electric charge storage region are resetted, will laterally overflows grid construction of switch half and be connected, then turns
The exposure charge of N3 in the first pixel P1 is moved to charge transfer region；
Nine, and so on, 2 grades of charge accumulation results of Nn are finally obtained at the end of tn+1.
By above-mentioned steps, the corresponding voltage value of 12 grades of charge accumulation result of Nn part of object is finally obtained.
By the above method, two obtained height gain signals carry out synthesis processing outside piece, can increase TDI images
The photosensitive dynamic range of sensor.
Technical solution two
The CMOSTDI imaging sensors of the present invention include M/2 repetitive unit, and each repetitive unit includes two row pixels；
The shared charge transfer region of the first, second pixel of each column of each repetitive unit and a charge amplification module, first, second
Corresponding voltage signal is exported by charge amplification module after the charge that pixel exposure generates is cumulative in charge transfer region；Its
In, M is the even number more than or equal to 2.
Above-mentioned TDI imaging sensors, two row pixels constitute a repetitive unit, and 2 grades of exposures are realized inside repetitive unit
Charge is cumulative, each to repeat the voltage signal of basic unit output, then carries out voltage accumulation.Therefore, using the present invention, due in picture
Plain grade realizes a charge and adds up, and does not introduce additional noise.Compared to the complete voltage of traditional cmos TDI imaging sensors
Cumulative, noise of the present invention reduces, i.e., for M grades of tradition TDI, noise and increasingTimes, but M grades of TDI of the present invention, noise are only promotedTimes, correspondingly, the more traditional M grades of TDI of noise is promotedTimes.
Photogenerated charge signal is converted to the ability of voltage signal by charge conversion gain characterization imaging sensor.The present invention can
Premise to promote signal-to-noise ratio is that adjacent rows pixel shares a charge transfer region, and charge conversion gain is constant.If directly profit
Multistage TDI imaging sensors are realized with the basic conception (multirow pixel shares a charge transfer region) of the present invention, then charge turns
Gain reduction is changed, the charge signal after cumulative is converted into voltage signal values reduction, and corresponding noise also reduces, and can not promote letter
It makes an uproar ratio.
The control method of above-mentioned CMOSTDI imaging sensors is as follows：
One, set object by N1, N2 ..., Nn it is total n part form, in the t1 periods, N1 moves to the first repetitive unit
The imaging area of first pixel P1, the first pixel P1 are exposed N1；
Two, before t1 terminates, stop exposure, the exposure electric charge transfer in first the first pixel of repetitive unit P1 to the first weight
In multiple elementary charge transition range；
Three, in the t2 periods, N2 moves to the imaging area of first the first pixel of repetitive unit P1, the first pixel P1 to N2 into
Row exposes for the first time, while N1 moves to the imaging area of first the second pixel of repetitive unit P2, and the second pixel P2 carries out the to N1
Re-expose；
Four, before t2 terminates, the exposure charge of N1 in first the second pixel of repetitive unit P2 is shifted first and is repeated to first
Elementary charge transition range, it is cumulative with the exposure charge of t1 period N1, it then will by the first repetitive unit charge amplification module
2 grades of charge accumulation results of N1 are read；
Five, the first repetitive unit charge transfer region is resetted, is then shifted in first the first pixel of repetitive unit P1
The exposure charge of N2 is to the first repetitive unit charge transfer region；
Six, in the t3 periods, N3 moves to the imaging area of first the first pixel of repetitive unit P1, the first pixel P1 to N3 into
Row exposes for the first time, while N2 moves to the imaging area of first the second pixel of repetitive unit P2, and the second pixel P2 carries out the to N2
Re-expose, N1 move to the imaging area of second the first pixel of repetitive unit P3, and the first pixel P3 carries out third time exposure to N1；
Seven, before t3 terminates, the exposure charge of N2 in first the second pixel of repetitive unit P2 is shifted first and is repeated to first
Elementary charge transition range, it is cumulative with the exposure charge of t2 period N2, it then will by the first repetitive unit charge amplification module
2 grades of charge accumulation results of N2 are read；
Eight, the first repetitive unit charge transfer region is resetted, is then shifted in first the first pixel of repetitive unit P1
The exposure charge of N3 is to the first repetitive unit charge transfer region；Shift the exposure charge of N1 in second the first pixel of repetitive unit P3
To the second repetitive unit charge transfer region；
Nine, in the t4 periods, N4 moves to the imaging area of first the first pixel of repetitive unit P1, the first pixel P1 to N4 into
Row exposes for the first time, while N3 moves to the imaging area of first the second pixel of repetitive unit P2, and the second pixel P2 carries out the to N3
Re-expose, N2 move to the imaging area of second the first pixel of repetitive unit P3, second repetitive unit the first pixel P3 to N2 into
Row third time exposes；N1 moves to the imaging area of second the second pixel of repetitive unit P4, second P4 pairs of the second pixel of repetitive unit
N1 carries out the 4th exposure；
Ten, before t4 terminates, the exposure charge of N3 in first the second pixel of repetitive unit P2 is shifted first and is repeated to first
Elementary charge transition range, it is cumulative with the exposure charge of t3 period N3, it then will by the first repetitive unit charge amplification module
2 grades of charge accumulation results of N3 are read；The exposure charge of N1 in second the second pixel of repetitive unit P2 is shifted simultaneously to the second weight
Multiple elementary charge transition range, it is cumulative with the exposure charge of t3 period N1, then pass through the second repetitive unit charge amplification module
2 grades of charge accumulation results of N1 are read；
11, the first, second repetitive unit charge transfer region is resetted, then shifts first the first picture of repetitive unit
The exposure charge of N4 is to the first repetitive unit charge transfer region in plain P1；Shift the exposure of N2 in second the first pixel of repetitive unit P3
Optical charge is to the second repetitive unit charge transfer region；
12, the rest may be inferred, obtains the corresponding voltage value of M/2 2 grades of charge accumulation results of n part of object.
Addition processing is carried out to M/2 voltage value of each part of obtained object outside imaging sensor, finally may be used
To obtain M grades of accumulation results.Or it is internally integrated storage unit (being made of multiple capacitor arrays) in imaging sensor, it deposits
M/2 voltage results are stored up, are then added up to voltage results with adder, can directly be exported in this way by imaging sensor tired
Add result it is not necessary to which external data addition processing, simplifies system complexity.The M grade TDI images designed by this method pass
Sensor, M times of signal boost, noise and increasingTimes.
Description of the drawings
Invention is further described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is traditional cmos TDI image sensor architecture schematic diagrames.
Fig. 2 is 1 configuration diagram of CMOS TDI image sensor embodiments of the present invention.
Fig. 3 is that the CMOS TDI imaging sensors of the embodiment of the present invention 1 and the correspondence of imaging object in time show
It is intended to.
Fig. 4 a~Fig. 4 e are each row pixel operation time diagrams of CMOS TDI imaging sensors of embodiment 1.
Fig. 5 is 2 configuration diagram of CMOS TDI image sensor embodiments of the present invention.
Fig. 6 is that the CMOS TDI imaging sensors of the embodiment of the present invention 2 and the correspondence of imaging object in time show
It is intended to.
Fig. 7 a~Fig. 7 k are each row pixel operation time diagrams of CMOS TDI imaging sensors of embodiment 2.
Fig. 8 is the configuration diagram of the CMOS TDI image sensor embodiments 3 of the present invention.
Specific implementation mode
Embodiment 1
As shown in Fig. 2, CMOSTDI imaging sensors include two row pixels, wherein the first, second pixel P1, P2 of each column
There are independent photodiode PD, two pixels to share a charge transfer region FD and charge amplification module；First, second pixel
Corresponding voltage signal is exported by charge amplification module after the charge that P1, P2 exposure generate is cumulative in the FD of charge transfer region.
2 grades of CMOSTDI imaging sensors and the correspondence of imaging object in time have been illustrated in Fig. 3.Assuming that
One object is made of tetra- parts A, B, C, D, and object relative image sensor is moved.As shown in Fig. 4 a~Fig. 4 e, this 2
Steps are as follows for grade CMOSTDI imaging sensors control method：
One, in the t1 periods, A moves to the imaging area of the first pixel P1, and the first pixel P1 is exposed A；
Two, before t1 terminates, stop exposing, in the first pixel P1 in the exposure electric charge transfer to charge transfer region FD of A；
Three, in the t2 periods, B moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to B,
A moves to the imaging area of the second pixel P2 simultaneously, and the second pixel P2 carries out second to A and exposes；
Four, before t2 terminates, the exposure charge of A in the second pixel P2 is shifted first to charge transfer region FD, with the t1 times
The exposure charge of section A is cumulative, is then read 2 grades of charge accumulation results of A by charge amplification module；
Five, charge transfer region FD is resetted, then shifts the exposure charge of B in the first pixel P1 to charge transfer region
FD；
Six, in the t3 periods, C moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to C,
B moves to the imaging area of the second pixel P2 simultaneously, and the second pixel P2 carries out second to B and exposes；
Seven, before t3 terminates, the exposure charge of B in the second pixel P2 is shifted first to charge transfer region FD, with the t2 times
The exposure charge of section B is cumulative, is then read 2 grades of charge accumulation results of B by charge amplification module；
Eight, charge transfer region FD is resetted, then shifts the exposure charge of C in the first pixel P1 to charge transfer region
FD；
Nine, in the t4 periods, D moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to D,
C moves to the imaging area of the second pixel P2 simultaneously, and the second pixel P2 carries out second to C and exposes；
Ten, before t4 terminates, the exposure charge of C in the second pixel P2 is shifted first to charge transfer region FD, with the t3 times
The exposure charge of section C is cumulative, is then read 2 grades of charge accumulation results of C by charge amplification module；
11, charge transfer region FD is resetted, then shifts the exposure charge of D in the first pixel P1 to electric charge transfer
Area FD；
12, in the t5 periods, D moves to the imaging area of the second pixel P2, and the second pixel P2 carries out second to D and exposes
Light；
13, before t5 terminates, the exposure charge of D in the second pixel P2 is shifted first to charge transfer region FD, when with t4
Between section D exposure charge it is cumulative, then 2 grades of charge accumulation results of D are read by charge amplification module；
14, charge transfer region FD is resetted, 2 grades of charges for finally obtaining tetra- parts object A, B, C, D are cumulative
As a result.
Embodiment 2
As shown in figure 5, CMOSTDI imaging sensors include M/2 repetitive unit, each repetitive unit includes two row pictures
Element；The shared charge transfer region of the first, second pixel of each column of each repetitive unit and a charge amplification module, first,
Corresponding voltage signal is exported by charge amplification module after the charge that second pixel exposure generates is cumulative in charge transfer region；
Wherein, M is the even number more than or equal to 2.
6 grades of CMOSTDI imaging sensors and the correspondence of imaging object in time have been illustrated in Fig. 6.Assuming that one
A object is made of six parts A, B, C, D, E, F, and object relative image sensor is moved.As shown in Fig. 7 a~Fig. 7 k,
Steps are as follows for 6 grades of CMOSTDI imaging sensors control methods：
One, in the t1 periods, A moves to the imaging area of first the first pixel of repetitive unit P1, and the first pixel P1 carries out A
Exposure；
Two, before t1 terminates, stop exposure, the exposure electric charge transfer in first the first pixel of repetitive unit P1 to the first weight
In multiple elementary charge transition range FD；
Three, in the t2 periods, B moves to the imaging area of first the first pixel of repetitive unit P1, and the first pixel P1 carries out B
It exposes for the first time, while A moves to the imaging area of first the second pixel of repetitive unit P2, the second pixel P2 carries out A second
Exposure；
Four, before t2 terminates, the exposure charge for shifting A in first the second pixel of repetitive unit P2 first is single to the first repetition
Elementary charge transition range FD, it is cumulative with the exposure charge of t1 period A, then by the first repetitive unit charge amplification module by A
2 grades of charge accumulation results read；
Five, the first repetitive unit charge transfer region FD is resetted, then shifts first the first pixel of repetitive unit P1
The exposure charge of middle B is to the first repetitive unit charge transfer region FD；
Six, in the t3 periods, C moves to the imaging area of first the first pixel of repetitive unit P1, and the first pixel P1 carries out C
It exposes for the first time, while B moves to the imaging area of first the second pixel of repetitive unit P2, the second pixel P2 carries out B second
Exposure, A move to the imaging area of second the first pixel of repetitive unit P3, and the first pixel P3 carries out third time exposure to A；
Seven, before t3 terminates, the exposure charge for shifting B in first the second pixel of repetitive unit P2 first is single to the first repetition
Elementary charge transition range FD, it is cumulative with the exposure charge of t2 period B, then by the first repetitive unit charge amplification module by B
2 grades of charge accumulation results read；
Eight, the first repetitive unit charge transfer region FD is resetted, then shifts first the first pixel of repetitive unit P1
The exposure charge of middle C is to the first repetitive unit charge transfer region FD；Shift the exposure electricity of A in second the first pixel of repetitive unit P3
Lotus is to the second repetitive unit charge transfer region FD；
Nine, in the t4 periods, D moves to the imaging area of first the first pixel of repetitive unit P1, and the first pixel P1 carries out D
It exposes for the first time, while C moves to the imaging area of first the second pixel of repetitive unit P2, the second pixel P2 carries out C second
Exposure, B move to the imaging area of second the first pixel of repetitive unit P3, and second repetitive unit the first pixel P3 carries out third to B
Secondary exposure；A moves to the imaging area of second the second pixel of repetitive unit P4, and second repetitive unit the second pixel P4 carries out the to A
Four exposures；
Ten, before t4 terminates, the exposure charge for shifting C in first the second pixel of repetitive unit P2 first is single to the first repetition
Elementary charge transition range FD, it is cumulative with the exposure charge of t3 period C, then by the first repetitive unit charge amplification module by C
2 grades of charge accumulation results read；The exposure charge for shifting A in second the second pixel of repetitive unit P4 simultaneously is single to the second repetition
Elementary charge transition range FD, it is cumulative with the exposure charge of t3 period A, then by the second repetitive unit charge amplification module by A
2 grades of charge accumulation results read；
11, the first, second repetitive unit charge transfer region FD is resetted, then shifts the first repetitive unit first
The exposure charge of D is to the first repetitive unit charge transfer region FD in pixel P1；Shift B in second the first pixel of repetitive unit P3
Charge is exposed to the second repetitive unit charge transfer region FD；
12, in the t5 periods, E moves to the imaging area of first the first pixel of repetitive unit P1, the first pixel P1 to E into
Row exposes for the first time, while D moves to the imaging area of first the second pixel of repetitive unit P2, and the second pixel P2 carries out second to D
Secondary exposure, C move to the imaging area of second the first pixel of repetitive unit P3, and second repetitive unit the first pixel P3 carries out the to C
It exposes three times；B moves to the imaging area of second the second pixel of repetitive unit P4, and second repetitive unit the second pixel P4 carries out B
4th exposure；A moves to the imaging area of the first pixel of the third repeating unit P5, the third repeating unit the first pixel P5 to A into
Row five times exposure；
13, before t5 terminates, the exposure charge of D in first the second pixel of repetitive unit P2 is shifted first and is repeated to first
Elementary charge transition range FD, it is cumulative with the exposure charge of t4 period D, it then will by the first repetitive unit charge amplification module
2 grades of charge accumulation results of D are read；Simultaneously shift second the second pixel of repetitive unit P4 in B exposure charge to second repeat
Elementary charge transition range FD, it is cumulative with the exposure charge of t4 period B, it then will by the second repetitive unit charge amplification module
2 grades of charge accumulation results of B are read；
14, the first, second repetitive unit charge transfer region FD is resetted, then shifts the first repetitive unit first
The exposure charge of E is to the first repetitive unit charge transfer region FD in pixel P1；Shift C in second the first pixel of repetitive unit P3
Charge is exposed to the second repetitive unit charge transfer region FD；Shift the exposure charge of A in the first pixel of the third repeating unit P5 extremely
The third repeating unit charge transfer region FD；
15, in the t6 periods, F moves to the imaging area of first the first pixel of repetitive unit P1, the first pixel P1 to F into
Row exposes for the first time, while E moves to the imaging area of first the second pixel of repetitive unit P2, and the second pixel P2 carries out second to E
Secondary exposure, D move to the imaging area of second the first pixel of repetitive unit P3, and second repetitive unit the first pixel P3 carries out the to D
It exposes three times；C moves to the imaging area of second the second pixel of repetitive unit P4, and second repetitive unit the second pixel P4 carries out C
4th exposure；B moves to the imaging area of the first pixel of the third repeating unit P5, the third repeating unit the first pixel P5 to B into
Row five times exposure；A moves to the imaging area of the second pixel of the third repeating unit P6, and P6 is to A for the second pixel of the third repeating unit
Carry out the 6th exposure；
16, before t6 terminates, the exposure charge of E in first the second pixel of repetitive unit P2 is shifted first and is repeated to first
Elementary charge transition range FD, it is cumulative with the exposure charge of t5 period E, it then will by the first repetitive unit charge amplification module
2 grades of charge accumulation results of E are read；Simultaneously shift second the second pixel of repetitive unit P4 in C exposure charge to second repeat
Elementary charge transition range FD, it is cumulative with the exposure charge of t5 period C, it then will by the second repetitive unit charge amplification module
2 grades of charge accumulation results of C are read；The exposure charge of A in the second pixel of the third repeating unit P6 is shifted simultaneously to the third repeating
Elementary charge transition range FD, it is cumulative with the exposure charge of t5 period A, it then will by the second repetitive unit charge amplification module
2 grades of charge accumulation results of A are read；
17, the first, second, third repetitive unit charge transfer region FD is resetted, then shifts first and repeats list
The exposure charge of F is to the first repetitive unit charge transfer region FD in the first pixel P1 of member；Shift second the first pixel of repetitive unit
The exposure charge of D is to the second repetitive unit charge transfer region FD in P3；Shift the exposure of B in the first pixel of the third repeating unit P5
Charge is to the third repeating unit charge transfer region FD；
18, in the t7 periods, F moves to the imaging area of first the second pixel of repetitive unit P2, the second pixel P2 to F into
Second of exposure of row, E move to the imaging area of second the first pixel of repetitive unit P3, and second the first pixel of repetitive unit P3 is to E
Carry out third time exposure；D moves to the imaging area of second the second pixel of repetitive unit P4, second P4 pairs of the second pixel of repetitive unit
D carries out the 4th exposure；C moves to the imaging area of the first pixel of the third repeating unit P5, the first pixel of the third repeating unit P5
Five times exposure is carried out to C；B moves to the imaging area of the second pixel of the third repeating unit P6, the second pixel of the third repeating unit
P6 carries out the 6th exposure to B；
19, before t7 terminates, the exposure charge of F in first the second pixel of repetitive unit P2 is shifted first and is repeated to first
Elementary charge transition range FD, it is cumulative with the exposure charge of t6 period E, it then will by the first repetitive unit charge amplification module
2 grades of charge accumulation results of F are read；Simultaneously shift second the second pixel of repetitive unit P4 in D exposure charge to second repeat
Elementary charge transition range FD, it is cumulative with the exposure charge of t6 period D, it then will by the second repetitive unit charge amplification module
2 grades of charge accumulation results of D are read；The exposure charge of B in the second pixel of the third repeating unit P6 is shifted simultaneously to the third repeating
Elementary charge transition range FD, it is cumulative with the exposure charge of t6 period B, it then will by the second repetitive unit charge amplification module
2 grades of charge accumulation results of B are read；
20, the first, second, third repetitive unit charge transfer region FD is resetted, then shifts second and repeats list
The exposure charge of E is to the second repetitive unit charge transfer region FD in the first pixel P3 of member；Shift the first pixel of the third repeating unit
The exposure charge of C is to the third repeating unit charge transfer region FD in P5；
21, in the t8 periods, F moves to the imaging area of second the first pixel of repetitive unit P3, the second repetitive unit
First pixel P3 carries out third time exposure to F；E moves to the imaging area of second the second pixel of repetitive unit P4, and second repeats list
The second pixel P4 of member carries out the 4th exposure to E；D moves to the imaging area of the first pixel of the third repeating unit P5, the third repeating
Unit the first pixel P5 carries out five times exposure to D；C moves to the imaging area of the second pixel of the third repeating unit P6, third weight
Multiple unit the second pixel P6 carries out the 6th exposure to C；
22, before t8 terminates, the exposure charge for shifting E in second the second pixel of repetitive unit P4 is single to the second repetition
Elementary charge transition range FD, it is cumulative with the exposure charge of t7 period E, then by the second repetitive unit charge amplification module by E
2 grades of charge accumulation results read；The exposure charge of C in the second pixel of the third repeating unit P6 is shifted simultaneously to the third repeating list
Elementary charge transition range FD, it is cumulative with the exposure charge of t7 period C, then by the second repetitive unit charge amplification module by C
2 grades of charge accumulation results read；
23, second, third repetitive unit charge transfer region FD is resetted, then shifts the second repetitive unit
The exposure charge of F is to the second repetitive unit charge transfer region FD in one pixel P3；Shift D in the first pixel of the third repeating unit P5
Exposure charge to the third repeating unit charge transfer region FD；
24, in the t9 periods, F moves to the imaging area of second the second pixel of repetitive unit P4, the second repetitive unit
Second pixel P4 carries out the 4th exposure to F；E moves to the imaging area of the first pixel of the third repeating unit P5, the third repeating list
The first pixel P5 of member carries out five times exposure to E；D moves to the imaging area of the second pixel of the third repeating unit P6, the third repeating
Unit the second pixel P6 carries out the 6th exposure to D；
25, before t9 terminates, the exposure charge for shifting F in second the second pixel of repetitive unit P4 is single to the second repetition
Elementary charge transition range FD, it is cumulative with the exposure charge of t8 period F, then by the second repetitive unit charge amplification module by F
2 grades of charge accumulation results read；The exposure charge of D in the second pixel of the third repeating unit P6 is shifted simultaneously to the third repeating list
Elementary charge transition range FD, it is cumulative with the exposure charge of t8 period D, then by the second repetitive unit charge amplification module by D
2 grades of charge accumulation results read；
26, second, third repetitive unit charge transfer region FD is resetted, then shifts the third repeating unit the
The exposure charge of E is to the third repeating unit charge transfer region FD in one pixel P5；
27, in the t10 periods, F moves to the imaging area of the first pixel of the third repeating unit P5, the third repeating unit
First pixel P5 carries out five times exposure to F；E moves to the imaging area of the second pixel of the third repeating unit P6, the third repeating list
The second pixel P6 of member carries out the 6th exposure to E；
28, before t10 terminates, the exposure charge of E in the second pixel of the third repeating unit P6 is shifted to the third repeating
Elementary charge transition range FD, it is cumulative with the exposure charge of t9 period E, it then will by the third repeating unit charge amplification module
2 grades of charge accumulation results of E are read；
29, the third repeating unit charge transfer region FD is resetted, then shifts the first picture of the third repeating unit
The exposure charge of F is to the third repeating unit charge transfer region FD in plain P5；
30, in the t11 periods, F moves to the imaging area of the second pixel of the third repeating unit P6, the third repeating unit
Two pixel P6 carry out the 6th exposure to F；
31, before t11 terminates, the exposure charge of F in the second pixel of the third repeating unit P6 is shifted to the third repeating
Elementary charge transition range FD, it is cumulative with the exposure charge of t10 period F, then pass through the third repeating unit charge amplification module
2 grades of charge accumulation results of F are read；
32, the third repeating unit charge transfer region FD is resetted, finally obtains 3 times 2 of six parts of object
The corresponding voltage value of grade charge accumulation result.
Addition processing is carried out to 3 obtained voltage values outside imaging sensor, 6 grades of cumulative, letters may finally be obtained
Number promoted 6 times, noise and increasingTimes.
Embodiment 3
As shown in figure 8, the CMOSTDI imaging sensors of the present invention include laterally to overflow grid construction of switch and two row pixels,
Grid construction of switch is laterally overflowed to be made of a switching transistor M；Wherein the first, second pixel P1, P2 of each column shares one
Charge transfer region FD and charge amplification module；The charge that the exposure of first, second pixel P1, P2 generates tires out in the FD of charge transfer region
Corresponding voltage signal is exported by charge amplification module after adding；The source electrode of switching transistor M connects charge transfer region FD, drain electrode
Pass through storage capacitance C connection power grounds or any stabilized power source current potential；Storage capacitance C is as electric charge storage region.
Steps are as follows for 2 grades of CMOSTDI imaging sensors control methods：
One, in the t1 periods, A moves to the imaging area of the first pixel P1, and the first pixel P1 is exposed A；
Two, before t1 terminates, stop exposing, in the first pixel P1 in the exposure electric charge transfer to charge transfer region FD of A, turn
Make laterally to overflow grid half before moving and is connected that (half conducting voltage setting principle is that the potential for ensureing to overflow under gate groove is less than floating expansion
The potential for dissipating area FD and being reset higher than photodiode), in this way when light exposure is smaller, charge storage is all exposed in charge
Transition range, when light exposure is larger, extra exposure charge is spilt into electric charge storage region；
Three, in the t2 periods, B moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to B,
A moves to the imaging area of the second pixel P2 simultaneously, and the second pixel P2 carries out second to A and exposes；
Four, before t2 terminates, the exposure charge of A in the second pixel P2 is shifted first to charge transfer region FD, with the t1 times
The exposure charge of section A is cumulative, and excess charge will be spilled over to by laterally overflowing gate groove in storage capacitance C；Amplified by charge
Module reads the high gain signal of charge transfer region FD；Finally switching transistor M is closed, by charge amplification module by A
Low gain signal results of 2 grades of cumulative charges after charge transfer region FD and storage capacitance C are redistributed read；
Five, charge transfer region FD and storage capacitance C are resetted, will laterally overflows grid half and be connected, then shifts first
The exposure charge of B is to charge transfer region FD in pixel P1；
Six, in the t3 periods, C moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to C,
B moves to the imaging area of the second pixel P2 simultaneously, and the second pixel P2 carries out second to B and exposes；
Seven, before t3 terminates, the exposure charge of B in the second pixel P2 is shifted first to charge transfer region FD, with the t2 times
The exposure charge of section B is cumulative, and excess charge will be spilled over to by laterally overflowing gate groove in storage capacitance C；Amplified by charge
Module reads the high gain signal of charge transfer region FD；Finally switching transistor M is closed, by charge amplification module by B
Low gain signal results of 2 grades of cumulative charges after charge transfer region FD and storage capacitance C are redistributed read；
Eight, charge transfer region FD and storage capacitance C are resetted, will laterally overflows grid half and be connected, then shifts first
The exposure charge of C is to charge transfer region FD in pixel P1；
Nine, in the t4 periods, D moves to the imaging area of the first pixel P1, and the first pixel P1 carries out first time exposure to D,
C moves to the imaging area of the second pixel P2 simultaneously, and the second pixel P2 carries out second to C and exposes；
Ten, before t4 terminates, the exposure charge of C in the second pixel P2 is shifted first to charge transfer region FD and storage capacitance
It is cumulative with the exposure charge of t3 period C in C, then the height of 2 grades of charge accumulation results of C is increased by charge amplification module
Benefit and low gain signal are read respectively；
11, charge transfer region FD and storage capacitance C are resetted, then shifts the exposure electricity of D in the first pixel P1
Lotus is to charge transfer region FD；
12, in the t5 periods, D moves to the imaging area of the second pixel P2, and the second pixel P2 carries out second to D and exposes
Light；
13, before t5 terminates, the exposure charge for shifting D in the second pixel P2 first is electric to charge transfer region FD and storage
Hold in C, it is cumulative with the exposure charge of t4 period D, then by charge amplification module by the height of 2 grades of charge accumulation results of D
Gain and low gain signal are read respectively；
14, it will be resetted in charge transfer region FD and storage capacitance C, finally obtain tetra- parts object A, B, C, D
2 grades of charge accumulation results two yield values.Two obtained height gain signals carry out synthesis processing, Ke Yizeng outside piece
The photosensitive dynamic range of big TDI imaging sensors.
A high dynamic transistor or multiple concatenated high dynamic transistors can also be used by laterally overflowing grid construction of switch,
The raceway groove of high dynamic transistor is as electric charge storage region.
Fig. 2, Fig. 5 sensor architecture are a rough schematic in the present invention, the unlimited specific image element circuit structure of system.Respectively
As long as framework (two row pixels share a charge transfer region) and control that kind of image sensor pixel is provided by the schematic diagram
Within the protection scope of the present invention method can realize 2 grades of TDI or multistage TDI functions, i.e.,.
Claims (3)
1. a kind of control method of CMOSTDI imaging sensors, it is characterised in that the CMOSTDI imaging sensors include two
Row pixel, the first, second pixel (P1) of each column, (P2) share a charge transfer region and charge amplification module；First, second
Pixel (P1), (P2), which expose, passes through the corresponding voltage of charge amplification module output after the charge generated adds up in charge transfer region
Signal；The control method of the imaging sensor includes the following steps：
One, set object by N1, N2 ..., Nn it is total n part form, in the t1 periods, N1 move to the first pixel (P1) at
As area, the first pixel (P1) is exposed N1；
Two, before t1 terminates, stop exposing, in the first pixel (P1) in the exposure electric charge transfer to charge transfer region of N1；
Three, in the t2 periods, N2 moves to the imaging area of the first pixel (P1), and the first pixel (P1) carries out first time exposure to N2
Light, while N1 moves to the imaging area of the second pixel (P2), the second pixel (P2) carries out second to N1 and exposes；
Four, before t2 terminates, the exposure charge of N1 in the second pixel (P2) is shifted first to charge transfer region, with t1 period N1
Exposure charge it is cumulative, then 2 grades of charge accumulation results of N1 are read by charge amplification module；
Five, charge transfer region is resetted, then shifts the exposure charge of N2 in the first pixel (P1) to charge transfer region；
Six, in the t3 periods, N3 moves to the imaging area of the first pixel (P1), and the first pixel (P1) carries out first time exposure to N3
Light, while N2 moves to the imaging area of the second pixel (P2), the second pixel (P2) carries out second to N2 and exposes；
Seven, before t3 terminates, the exposure charge of N2 in the second pixel (P2) is shifted first to charge transfer region, with t2 period N2
Exposure charge it is cumulative, then 2 grades of charge accumulation results of N2 are read by charge amplification module；
Eight, charge transfer region is resetted, then shifts the exposure charge of N3 in the first pixel (P1) to charge transfer region；
Nine, and so on, 2 grades of charge accumulation results of Nn are finally obtained at the end of tn+1.
2. a kind of control method of CMOSTDI imaging sensors, it is characterised in that the CMOSTDI imaging sensors include two rows
Pixel laterally overflows grid construction of switch；The first, second pixel (P1) of each column, (P2) share a charge transfer region and charge
Amplification module；The charge that first, second pixel (P1), (P2) exposure generate is amplified after adding up in charge transfer region by charge
Module exports corresponding voltage signal；It laterally overflows grid construction of switch to be made of a switching transistor (M), the switching transistor
(M) source electrode connection charge transfer region (FD), drain electrode connect power ground or any stabilized power source electricity by storage capacitance (C)
Position；Storage capacitance (C) is used as electric charge storage region；The control method of the imaging sensor includes the following steps：
One, grid construction of switch half will be laterally overflowed first to be connected；If object by N1, N2 ..., Nn it is total n part form, in t1
Period, N1 move to the imaging area of the first pixel (P1), and the first pixel (P1) is exposed N1；
Two, before t1 terminates, stop exposing, in the first pixel (P1) in the exposure electric charge transfer to charge transfer region of N1, work as exposure
When light quantity is smaller, charge storage is all exposed in charge transfer region, when light exposure is larger, extra exposure charge spills into electricity
In lotus memory block；
Three, in the t2 periods, N2 moves to the imaging area of the first pixel (P1), and the first pixel (P1) carries out first time exposure to N2
Light, while N1 moves to the imaging area of the second pixel (P2), the second pixel (P2) carries out second to N1 and exposes；
Four, before t2 terminates, the exposure charge of N1 in the second pixel (P2) is shifted first to charge transfer region, with t1 period N1
Exposure charge it is cumulative, excess charge will be spilled over to by laterally overflowing gate groove in electric charge storage region；Amplify mould by charge
Block reads the high gain signal of charge transfer region；It finally will laterally overflow grid construction of switch to be closed, pass through charge amplification module
Low gain signal results after charge transfer region and electric charge storage region are redistributed are read；
Five, charge transfer region and electric charge storage region are resetted, will laterally overflows grid construction of switch half and is connected, then shift the
The exposure charge of N2 is to charge transfer region in one pixel (P1)；
Six, in the t3 periods, N3 moves to the imaging area of the first pixel (P1), and the first pixel (P1) carries out first time exposure to N3
Light, while N2 moves to the imaging area of the second pixel (P2), the second pixel (P2) carries out second to N2 and exposes；
Seven, before t3 terminates, the exposure charge of N2 in the second pixel (P2) is shifted first to charge transfer region, with t2 period N2
Exposure charge it is cumulative, excess charge will be spilled over to by laterally overflowing gate groove in electric charge storage region；Amplify mould by charge
Block reads the high gain signal of charge transfer region；It finally will laterally overflow grid construction of switch to be closed, pass through charge amplification module
Low gain signal results after charge transfer region and electric charge storage region are redistributed are read；
Eight, charge transfer region and electric charge storage region are resetted, will laterally overflows grid construction of switch half and is connected, then shift the
The exposure charge of N3 is to charge transfer region in one pixel (P1)；
Nine, and so on, 2 grades of charge accumulation results of Nn are finally obtained at the end of tn+1.
3. a kind of control method of CMOSTDI imaging sensors, it is characterised in that the CMOSTDI imaging sensors include M/
2 repetitive units, each repetitive unit include two row pixels；The first, second pixel of each column of each repetitive unit shares one
Charge transfer region and a charge amplification module, after the charge that the first, second pixel exposure generates adds up in charge transfer region
Corresponding voltage signal is exported by charge amplification module；Wherein, M is the even number more than or equal to 2；The control of the imaging sensor
Method includes the following steps：
One, set object by N1, N2 ..., Nn it is total n part form, in the t1 periods, N1 moves to the first repetitive unit first
The imaging area of pixel (P1), the first pixel (P1) are exposed N1；
Two, before t1 terminates, stop exposure, the exposure electric charge transfer in first the first pixel of repetitive unit (P1) to first repeats
In elementary charge transition range；
Three, in the t2 periods, N2 moves to the imaging area of first the first pixel of repetitive unit (P1), the first pixel (P1) to N2 into
Row exposes for the first time, while N1 moves to the imaging area of first the second pixel of repetitive unit (P2), the second pixel (P2) to N1 into
Second of exposure of row；
Four, before t2 terminates, the exposure charge for shifting N1 in first the second pixel of repetitive unit (P2) first is single to the first repetition
Elementary charge transition range, it is cumulative with the exposure charge of t1 period N1, then by the first repetitive unit charge amplification module by N1
2 grades of charge accumulation results read；
Five, the first repetitive unit charge transfer region is resetted, then shifts N2 in first the first pixel of repetitive unit (P1)
Exposure charge to the first repetitive unit charge transfer region；
Six, in the t3 periods, N3 moves to the imaging area of first the first pixel of repetitive unit (P1), the first pixel (P1) to N3 into
Row exposes for the first time, while N2 moves to the imaging area of first the second pixel of repetitive unit (P2), the second pixel (P2) to N2 into
Row second exposes, and N1 moves to the imaging area of second the first pixel of repetitive unit (P3), and the first pixel (P3) carries out the to N1
It exposes three times；
Seven, before t3 terminates, the exposure charge for shifting N2 in first the second pixel of repetitive unit (P2) first is single to the first repetition
Elementary charge transition range, it is cumulative with the exposure charge of t2 period N2, then by the first repetitive unit charge amplification module by N2
2 grades of charge accumulation results read；
Eight, the first repetitive unit charge transfer region is resetted, then shifts N3 in first the first pixel of repetitive unit (P1)
Exposure charge to the first repetitive unit charge transfer region；Shift the exposure charge of N1 in second the first pixel of repetitive unit (P3)
To the second repetitive unit charge transfer region；
Nine, in the t4 periods, N4 moves to the imaging area of first the first pixel of repetitive unit (P1), the first pixel (P1) to N4 into
Row exposes for the first time, while N3 moves to the imaging area of first the second pixel of repetitive unit (P2), the second pixel (P2) to N3 into
Second of exposure of row, N2 move to the imaging area of second the first pixel of repetitive unit (P3), second the first pixel of repetitive unit
(P3) third time exposure is carried out to N2；N1 moves to the imaging area of second the second pixel of repetitive unit (P4), the second repetitive unit
Second pixel (P4) carries out the 4th exposure to N1；
Ten, before t4 terminates, the exposure charge for shifting N3 in first the second pixel of repetitive unit (P2) first is single to the first repetition
Elementary charge transition range, it is cumulative with the exposure charge of t3 period N3, then by the first repetitive unit charge amplification module by N3
2 grades of charge accumulation results read；The exposure charge of N1 in second the second pixel of repetitive unit (P2) is shifted simultaneously to the second weight
Multiple elementary charge transition range, it is cumulative with the exposure charge of t3 period N1, then pass through the second repetitive unit charge amplification module
2 grades of charge accumulation results of N1 are read；
11, the first, second repetitive unit charge transfer region is resetted, then shifts first the first pixel of repetitive unit
(P1) the exposure charge of N4 is to the first repetitive unit charge transfer region in；Shift N2 in second the first pixel of repetitive unit (P3)
Charge is exposed to the second repetitive unit charge transfer region；
12, the rest may be inferred, obtains the corresponding voltage value of M/2 2 grades of charge accumulation results of n part of object.
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| CN108322681B (en) * | 2018-02-23 | 2020-08-14 | 长春长光辰芯光电技术有限公司 | TDI photosensitive device for inhibiting image mismatch and image sensor |
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