CN101494230A - Sensing type semiconductor package and production method thereof - Google Patents
Sensing type semiconductor package and production method thereof Download PDFInfo
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- CN101494230A CN101494230A CNA2008100037091A CN200810003709A CN101494230A CN 101494230 A CN101494230 A CN 101494230A CN A2008100037091 A CNA2008100037091 A CN A2008100037091A CN 200810003709 A CN200810003709 A CN 200810003709A CN 101494230 A CN101494230 A CN 101494230A
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Abstract
The invention discloses a sensing type semiconductor packaging piece and a manufacturing method thereof and mainly provides a substrate. A sensing chip with a sensing area is connected with and placed on the substrate, the sensing chip and the substrate are electrically connected by welding wires, an adhesion layer is formed on a light penetrating body, and has an opening corresponding to the sensing area so as to connect the light penetrating body on the substrate via the adhesion layer for heating, thus leading the adhesion layer to present a molten condition when being connected with the substrate to cover the circumference of the sensing chip and welding wires; in addition, the sensing area is exposed so as to lead the light penetrating body to close over the sensing area to form the light, thin and short sensing type semiconductor packaging piece without dam structure, thus reducing the manufacturing cost. Moreover, with the adhesion layer covering the welding wires, the rupture problems of the welding wires can be avoided, thus further increasing the reliability of products.
Description
Technical field
The present invention relates to a kind of semiconductor package part and method for making thereof, particularly relate to a kind of inductance semiconductor encapsulation part and manufacture method thereof.
Background technology
Tradition image sensing formula semiconductor package part (Image sensor package) connects sensor chip (Sensor chip) to place on the chip bearing member, and after being electrically connected this sensor chip and chip bearing member by bonding wire, cover a light penetrating object in this sensor chip top, can be captured by this sensor chip for image light.So, this image sensing formula semiconductor package part of finishing the structure dress can be integrated into as on the printed circuit board (PCB) external device (ED)s such as (PCB) for factory of system, for the application as various electronic products such as digital camera (DSC), digital camera (DV), optical mouse, mobile phones.
See also Fig. 1, United States Patent (USP) the 5th, 534, No. 725 a kind of inductance semiconductor encapsulation part is disclosed, be on the chip carrier 11a of lead frame 11, connect and put a sensor chip 12 with sensing area 12a, and the weld pad 12b of sensor chip 12 and the lead foot 11b of this lead frame 11 are electrically connected with bonding wire 13; With adhesion layer 14 light penetrating object 15 is attached on the sensor chip 12, this adhesion layer 14 is positioned between this sensing area 12a and this weld pad 12b, to seal and not contact the sensing area 12a of this sensor chip 12 again; Utilize encapsulating mould (indicating) to form again and coat this lead frame 11, this bonding wire 13 and this sensor chip 12 packing colloid 16 on every side, expose this light penetrating object 15 simultaneously in mold pressing (molding) mode.
But aforementioned techniques is when forming this packing colloid 16, because of light penetrating object 15 are the patrix inwall tops that directly are resisted against encapsulating mould, therefore because of molding pressure makes this light penetrating object 15 rhegma takes place easily, even crushing is located at the sensor chip 12 of these light penetrating object 15 belows, in addition, when if the patrix inwall of this light penetrating object 15 and encapsulating mould does not produce the slit really because of pressing, also will produce the problem of these packing colloid 16 excessive glue to these light penetrating object 15 surfaces; Moreover, on this sensor chip 12, between this sensing area 12a and this weld pad 12b, also must leave the space of adhesion layer 14, so will make the area that this sensor chip 12 must this sensing area of limit 12a, also maybe must enlarge sensor chip 12 sizes, so will reduce the service efficiency of this sensor chip 12.
In view of this, see also Fig. 2, United States Patent (USP) the 5th, 962, a kind of overall package part size of dwindling is disclosed for No. 810, and make sensor chip not have the inductance semiconductor encapsulation part of crushing problem, it is to connect to put a sensor chip 22 on substrate 21, and utilize bonding wire 23 to electrically connect the weld pad 22b and the substrate 21 of this sensor chip, then on this bonding wire 23, lay mobile colloid and as ponding (Dam) structure 24 with dispensing technology, go up coating transparent adhesive tape 25 in the sensing area 22a of this sensor chip 22 afterwards, formation one can be dwindled the inductance semiconductor encapsulation part of overall dimensions.
But in the above-mentioned technology, this flowability colloid is the manufacturing cost height not only, and the product reliability is low, therefore can't generally use for industry institute.
Moreover, in United States Patent (USP) the 5th, 950, No. 074, the 6th, 060, No. 340, the 6th, 262, No. 479, the 6th, 384, No. 472, the 6th, 590, No. 269, the 6th, 989, in No. 296, another kind of inductance semiconductor encapsulation part is disclosed then.See also Fig. 3 A, the prior art is to form a ponding structure 34 on a substrate 31, place on the substrate 31 and be placed in this ponding structure 34 so that a sensor chip 32 with sensing area 32a is connect, and electrically connect the weld pad 32b and the substrate 31 of these sensor chips 32 with bonding wire 33, one light penetrating object 35 is set again, with this sensor chip 32 of capping on this ponding structure 34.
Other sees also Fig. 3 B, United States Patent (USP) the 6th, 545, similar inductance semiconductor encapsulation part is then disclosed in No. 332, provide a lead frame 310 with chip carrier 310a and a plurality of lead foot 310b, be formed with first packing colloid 36 between the two, connect in this chip carrier 310a and to put a sensor chip 32 with sensing area 32a, and the weld pad 32b of sensor chip 32 and the lead foot 310b of this lead frame 310 are electrically connected with bonding wire 33, form a ponding structure 34 again on this lead foot 310b, and surround this sensor chip 32 and this bonding wire 33, multiple form second packing colloid 37 with dispensing technology in 34 on this sensor chip 32 and this ponding structure, and covered section is connected in the bonding wire 33 of this lead foot 310b, chip carrier 310a and lead foot 310b are provided with a light penetrating object 35, at last with this sensor chip 32 of capping on this ponding structure 34; Also or prior to this lead foot 310b go up formation ponding structure 34, connect the bonding wire 33 of putting this sensor chip 32 and electrically connecting usefulness again.
In the aforementioned techniques, mainly be to utilize ponding structure 34 and this sensor chip 32 of light penetrating object 35 cappings, avoid light penetrating object 35 direct contact sensing chips 32, make the problem of these sensor chip 32 no fails in compression, but all there is the topic of corresponding altogether in the aforementioned prior art, promptly the integral planar size of this packaging part includes chip size, routing space and ponding structure 34 width, particularly this ponding structure 34 is provided with shared area, causing overall package part size to need headspace for this ponding structure 34 is set, is can't satisfy the compact demand of packaging part.
See also Fig. 4 A, United States Patent (USP) the 6th, 995, a kind of inductance semiconductor encapsulation part that does not have the ponding structure is disclosed for No. 462, the substrate 41 of one tool groove 41a is provided, in this groove 41a, connect and put a sensor chip 42 with sensing area 42a, and electrically connect weld pad 42b and this substrate 41 of these sensor chips 42 with bonding wire 43, with adhesion layer 44 light penetrating object 45 is attached on the sensor chip 42 again, and covered section is connected in the bonding wire 43 of this weld pad 42b, to seal but do not contact the sensing area 42a of this sensor chip 42, (Liquid Mold Compound LMC) forms packing colloid 46, to coat bonding wire 43 parts that are connected in these substrate 41 tops by this packing colloid 46 with liquid potting compound to utilize dispensing technology again in the groove 41a of this substrate 41, expose this light penetrating object 45 simultaneously, remove the making of ponding structure from.
But shown in Fig. 4 B, the associativity that formed packing colloid 46 of this liquid state potting compound and adhesion layer are 44 is not good, easily form delamination 46a (delamination), very the person may cause bonding wire that simultaneously packed colloid 46 and adhesion layer 44 coat 43 impaired and fracture 43a takes place, and makes it become defective products.
Therefore, how a kind of inductance semiconductor encapsulation part and method for making thereof are provided, be improved sensor chip service efficiency, reduce encapsulation volume, simplify production procedure, reduce the material cost made, prevent defective products in make or use in produce, really be the required problem of urgently facing on the association area.
Summary of the invention
In view of the defective of aforementioned prior art, a purpose of the present invention provides a kind of inductance semiconductor encapsulation part and method for making thereof of avoiding delamination.
A multiple purpose of the present invention provides a kind of some inductance semiconductor encapsulation part of glue processing procedure and the method for making thereof omitted.
Another purpose of the present invention provides a kind of inductance semiconductor encapsulation part and method for making thereof of compactization.
Another object of the present invention provides a kind of inductance semiconductor encapsulation part and method for making thereof of simplifying encapsulation procedure.
A further object of the present invention provides a kind of inductance semiconductor encapsulation part and method for making thereof that reduces manufacturing cost.
For achieving the above object, inductance semiconductor encapsulation part provided by the invention comprises: substrate; Sensor chip with sensing area connects and places on this substrate, and electrically connects this substrate and this sensor chip with bonding wire; Adhesion layer coats this sensor chip periphery and this bonding wire, and does not contact the sensing area of this sensor chip; And light penetrating object, connect with this adhesion layer and to place this substrate, and this sensing area of capping.
This substrate can be the planar grille array base palte (Land Grid Array, LGA); This adhesion layer height is greater than the bank top of this bonding wire distance to substrate; This adhesion layer has the material of low coefficient of viscosity (low viscosity) for chance heat; This adhesion layer is the resinous material of glue sheet under room temperature; This light penetrating object is a glass material.
The present invention also provides a kind of method for making of inductance semiconductor encapsulation part, comprising: provide a substrate, to connect the sensor chip of putting and having sensing area with bonding wire electric connection one on this substrate; Prepare a light penetrating object, be formed with adhesion layer, and this adhesion layer has opening that should sensing area in this light penetrating object; And this light penetrating object connect by this adhesion layer place this substrate and heat this substrate, make this adhesion layer when following, be molten condition and coat this sensor chip periphery and this bonding wire integral body in this substrate, and expose the sensing area of this sensor chip, and after this adhesion layer solidifies, make this this sensing area of light penetrating object capping.
The present invention provides a kind of method for making of inductance semiconductor encapsulation part again, comprising: a substrate that is batch shape is provided, puts and electrically connect a plurality of sensor chips with sensing area with bonding wire to connect in this substrate; Prepare a plurality of light penetrating objects, wherein respectively this light penetrating object is formed with adhesion layer, and this adhesion layer has opening that should sensing area; Respectively this light penetrating object connects by this adhesion layer and places this substrate and heat this substrate, make this adhesion layer when following, be molten condition and coat respectively this sensor chip periphery and this bonding wire integral body in this substrate, and expose the respectively sensing area of this sensor chip, and after this adhesion layer solidifies, make respectively this sensing area of respectively this light penetrating object capping; And cut single job, to form a plurality of inductance semiconductor encapsulation parts.
The present invention provides a kind of method for making of inductance semiconductor encapsulation part again, comprising: a substrate that is batch shape is provided, puts and electrically connect a plurality of sensor chips with sensing area with bonding wire to connect on this substrate; Prepare a light penetrating object, wherein this light penetrating object is formed with adhesion layer, and this adhesion layer has a plurality of to opening that should sensing area; This light penetrating object connect by this adhesion layer place this substrate and heat this substrate, make this adhesion layer when following, be molten condition and coat respectively this sensor chip periphery and this bonding wire integral body in this substrate, and expose the respectively sensing area of this sensor chip, and after this adhesion layer solidifies, make respectively this sensing area of this light penetrating object capping; And cut single job, to form a plurality of inductance semiconductor encapsulation parts.In addition, in the aforementioned method for making that provides, a plurality of second openings of this adhesion layer also can be formed with correspondence when cutting single job line of cut position.
Therefore, in inductance semiconductor encapsulation part of the present invention and the method for making thereof, be that adhesion layer is defaulted on the light penetrating object, the light penetrating object that again this is provided with adhesion layer connects and places on the substrate, and make this adhesion layer coat sensor chip periphery and whole piece bonding wire, avoid prior art that adhesion layer is arranged between the sensing area and weld pad of sensor chip, and can save the space that remaines between the two, improve the sensing area ratio of sensor chip; And the integral planar size of this packaging part only comprises this chip size and routing space, has saved the shared area of ponding structure is set, to satisfy the compact demand of packaging part; In addition, the present invention saves again and makes the ponding structure, carries out a glue processing procedure and forms the multilayer packing colloid, change with single colloid of planting and once encapsulate, thereby reach the simplification production procedure, save manufacturing lead time and cost, and can avoid situation, reduce the generation of defective products, thereby reach the effect that promotes manufacturing yield of products because of delamination between multilayer colloid.
Description of drawings
Fig. 1 is a United States Patent (USP) the 5th, 534, No. 725 disclosed inductance semiconductor encapsulation part generalized sections;
Fig. 2 is a United States Patent (USP) the 5th, 962, No. 810 disclosed inductance semiconductor encapsulation part generalized sections;
Fig. 3 A is existing inductance semiconductor encapsulation part generalized section;
Fig. 3 B is a United States Patent (USP) the 6th, 545, No. 332 disclosed existing inductance semiconductor encapsulation part generalized sections;
Fig. 4 A is a United States Patent (USP) the 6th, 995, No. 462 disclosed existing inductance semiconductor encapsulation part generalized sections;
Fig. 4 B is the partial enlarged drawing of Fig. 4 A, the delamination between the expression multilayer colloid;
Fig. 5 A to Fig. 5 C is the cross-sectional schematic of inductance semiconductor encapsulation part first embodiment of the present invention;
Fig. 6 A to Fig. 6 D is the cross-sectional schematic of inductance semiconductor encapsulation part second embodiment of the present invention;
Fig. 7 A to Fig. 7 D is the cross-sectional schematic of inductance semiconductor encapsulation part the 3rd embodiment of the present invention; And
Fig. 8 A to Fig. 8 D is the cross-sectional schematic of inductance semiconductor encapsulation part the 4th embodiment of the present invention.
The main element symbol description:
11,310 lead frames
11a, the 310a chip carrier
11b, the 310b lead foot
12,22,32,42 sensor chips
12a, 22a, 32a, 42a sensing area
12b, 22b, 32b, 42b weld pad
13,23,33,43 bonding wires
14,44 adhesion layers
15,35,45 light penetrating objects
16 packing colloids
21,31 substrates
24 ponding structures, 25 transparent adhesive tapes
34 ponding structures, 36 first packing colloids
37 second packing colloids
41 substrates
The fracture of 41a groove 43a bonding wire
46 packing colloids
The 46a delamination
50,60,70 inductance semiconductor encapsulation parts
51,61,71,81 substrates
52,62,72,82 sensor chips
52a, 62a, 72a, 82a sensing area
52b, 62b, 72b weld pad
53,63,73 bonding wires
54,64,74,84 adhesion layers
54a, 64a, 74a, 84a opening
55,65,75,85 light penetrating objects
84b second opening
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this specification disclosed.
First embodiment
See also Fig. 5 A to Fig. 5 C, be the cross-sectional schematic of inductance semiconductor encapsulation part of the present invention and method for making first embodiment thereof.
Shown in Fig. 5 A, one substrate 51 is provided, this substrate 51 for example be the planar grille array base palte (Land Grid Array, LGA), and on this substrate 51, connect and put a sensor chip 52 with sensing area 52a and weld pad 52b, electrically connect this weld pad 52b and this substrates 51 again with bonding wire 53; And prepare a light penetrating object 55 (as glass plate), wherein these light penetrating object 55 peripheries are formed with adhesion layer 54, these adhesion layer 54 height are greater than the distance of these bonding wire 53 bank tops to 51 of this substrates, wherein this adhesion layer 54 is the resinous material of glue sheet under room temperature, as epoxy resin film (epoxy tape), and this adhesion layer 54 has opening 54a that should sensing area 52a.
Shown in Fig. 5 B, this light penetrating object 55 connect by this adhesion layer 54 place sensor chip 52 and heat this substrate 51, make this adhesion layer 54 when following, be the molten condition of low coefficient of viscosity (low viscosity) and coat these sensor chip 52 peripheries and this bonding wire 53 integral body, and expose the sensing area 52a of this sensor chip 52 in this substrate 51.
Shown in Fig. 5 C, remove these adhesion layer 54 cooling curings of thermal source relief, and make this this sensing area of light penetrating object 55 cappings 52a, to form an inductance semiconductor encapsulation part 50.
The present invention also provides a kind of inductance semiconductor encapsulation part 50, comprising: substrate 51; Sensor chip 52 with sensing area 52a and weld pad 52b connects and places on this substrate 51, and electrically connects the weld pad 52b of this substrate 51 and this sensor chip 52 with bonding wire 53; Adhesion layer 54 coats these sensor chip 52 peripheries and this bonding wire 53 integral body, and does not contact the sensing area 52a of this sensor chip 52; And light penetrating object 55, connect with this adhesion layer 54 and to place this substrate 51, and this sensing area of capping 52a.
This substrate 51 can be the planar grille array base palte; This adhesion layer 54 height are greater than the bank top of this bonding wire 53 distance to 51 of this substrates; This adhesion layer 54 for example is the epoxy resin film, has low coefficient of viscosity when chance is hot; This light penetrating object 55 is a glass material.
Second embodiment
Other sees also Fig. 6 A to Fig. 6 D, is the cross-sectional schematic of method for making second embodiment of inductance semiconductor encapsulation part of the present invention.The present embodiment and first embodiment are roughly the same, and main difference is a plurality of sensor chips to be connect to put and be electrically connected to be on batch substrate of (batch) shape, connect on this substrate and put a plurality of light penetrating objects that are provided with adhesion layer, and cutting forms a plurality of packaging parts.
As shown in Figure 6A, provide a substrate 61 that is batch shape, this substrate 61 has a plurality of base board units, puts a plurality of sensor chips 62 with sensing area 62a and weld pad 62b to connect on this substrate 61, and electrically connects this weld pad 62b and this substrates 61 with bonding wire 63; And prepare a plurality of light penetrating objects 65, be formed with adhesion layer 64 in this light penetrating object 65 respectively, and this adhesion layer 64 has to opening 64a that should sensing area 62a.
Shown in Fig. 6 B, respectively this light penetrating object 65 connects by this adhesion layer 64 and places this substrate 61 and heat this substrate 61, make this adhesion layer 64 then in this substrate 61 time, be the molten condition of hanging down coefficient of viscosity and coat respectively these sensor chip 62 peripheries and this bonding wire 63 integral body, and expose the respectively sensing area 62a of this sensor chip 62.
Shown in Fig. 6 C, remove these adhesion layer 64 cooling curings of thermal source relief, and make this this sensing area of light penetrating object 65 cappings 62a.
Shown in Fig. 6 D, cut single job, to form a plurality of inductance semiconductor encapsulation parts 60.
Thus, on the substrate 61 of batch shape, make forming a plurality of inductance semiconductor encapsulation parts 60, to reach the effect of volume production and simplification processing procedure.
The 3rd embodiment
See also Fig. 7 A to Fig. 7 D, be the cross-sectional schematic of method for making the 3rd embodiment of inductance semiconductor encapsulation part of the present invention.The present embodiment and first embodiment are roughly the same, main difference is a plurality of sensor chips to be connect put and be electrically connected on the substrate that is batch shape, on this substrate, connect the full slice system light penetrating object that installs adhesion layer again, and this adhesion layer has a plurality of to opening that should the sensor chip sensing area.
Shown in Fig. 7 A, a substrate 71 that is batch shape is provided, and connects in this substrate 71 and to put a plurality of sensor chips 72, and electrically connect weld pad 72b and this substrate 71 of these sensor chips 72 with bonding wire 73 with sensing area 72a and weld pad 72b; Prepare a pair of full slice system light penetrating object 75 that should batch substrate 71 simultaneously, be formed with adhesion layer 74, and this adhesion layer 74 has a plurality of to opening 74a that should sensing area 72a in this light penetrating object 75.
Shown in Fig. 7 B, this light penetrating object 75 connect by this adhesion layer 74 place this substrate 71 and heat this substrate 71, make this adhesion layer 74 then in this substrate 71 time, be the molten condition of hanging down coefficient of viscosity and coat respectively these sensor chip 72 peripheries and this bonding wire 73 integral body, and expose the respectively sensing area 72a of this sensor chip 72.
Shown in Fig. 7 C, remove these adhesion layer 74 cooling curings of thermal source relief, and make this this sensing area of light penetrating object 75 cappings 72a.
Shown in Fig. 7 D, cut single job at last, to form a plurality of inductance semiconductor encapsulation parts 70.
Thus, the combination that utilizes the substrate 71 of batch shape and full slice system light penetrating object 75 with cut singly making a plurality of inductance semiconductor encapsulation parts 70, and then reach volume production and simplify the effect of processing procedure.
The 4th embodiment
See also Fig. 8 A to Fig. 8 D, be the cross-sectional schematic of method for making the 4th embodiment of inductance semiconductor encapsulation part of the present invention.
The present embodiment and first embodiment are roughly the same, main difference is a plurality of sensor chips 82 with sensing area 82a to be connect put and be electrically connected on the substrate 81 that is batch shape, on this substrate 81, connect the light penetrating object 85 that installs adhesion layer 84 again, and this adhesion layer 84 has the opening 84a to sensing area 82a that should sensor chip 82, and corresponding a plurality of second opening 84b of line of cut when cutting single job, to save the materials used of this adhesion layer 84.
Therefore, in inductance semiconductor encapsulation part of the present invention and the method for making thereof, be that adhesion layer is defaulted on the light penetrating object, the light penetrating object that again this is provided with adhesion layer connects and places on the substrate, and make this adhesion layer coat sensor chip periphery and whole piece bonding wire, avoid prior art that adhesion layer is arranged between the sensing area and weld pad of sensor chip, and can save the space that remaines between the two, improve the sensing area ratio of sensor chip; And the integral planar size of this packaging part only comprises this chip size and routing space, has saved the shared area of ponding structure is set, to satisfy the compact demand of packaging part; In addition, save and make the ponding structure, carry out a glue processing procedure and form the multilayer packing colloid, change with single colloid of planting and once encapsulate, thereby reach the simplification production procedure, save manufacturing lead time and cost, and can avoid situation, reduce the generation of defective products, thereby reach the effect that promotes manufacturing yield of products because of delamination between multilayer colloid.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention, and any those skilled in the art all can be under spirit of the present invention and category, and the foregoing description is modified and changed.Therefore, the scope of the present invention should be foundation with the scope of claims.
Claims (16)
1, a kind of inductance semiconductor encapsulation part comprises:
Substrate;
Sensor chip with sensing area connects and places on this substrate, and electrically connects this sensor chip and substrate with bonding wire;
Adhesion layer coats this sensor chip periphery and this bonding wire, and does not contact the sensing area of this sensor chip; And
Light penetrating object is located at this substrate by this adhesion layer, and this sensing area of capping.
2, inductance semiconductor encapsulation part according to claim 1, wherein, this adhesion layer is for meeting hot material with low coefficient of viscosity.
3, inductance semiconductor encapsulation part according to claim 2, wherein, this adhesion layer is the epoxy resin film.
4, a kind of method for making of inductance semiconductor encapsulation part comprises:
Provide a substrate, and the sensor chip that will have a sensing area connects and place on this substrate, and electrically connect this sensor chip and this substrate with bonding wire;
Prepare a light penetrating object, and on this light penetrating object, be formed with adhesion layer, and this adhesion layer has opening that should sensing area; And
This light penetrating object connect by this adhesion layer places this substrate, make this adhesion layer coat this sensor chip periphery and this bonding wire, and by this opening to expose the sensing area of this sensor chip, so that this this sensing area of light penetrating object capping.
5, the method for making of inductance semiconductor encapsulation part according to claim 4, wherein, this adhesion layer is for meeting hot material with low coefficient of viscosity.
6, the method for making of inductance semiconductor encapsulation part according to claim 5, wherein, this adhesion layer is the epoxy resin film.
7, the method for making of inductance semiconductor encapsulation part according to claim 4, wherein, this light penetrating object connects when placing this substrate by this adhesion layer, via this substrate of heating, make this adhesion layer then in this substrate the time, be the molten condition of hanging down coefficient of viscosity and coat this sensor chip periphery and this bonding wire, and expose the sensing area of this sensor chip, and in removing this adhesion layer cooling curing of thermal source relief, and make this this sensing area of light penetrating object capping.
8, a kind of method for making of inductance semiconductor encapsulation part comprises:
One substrate that is batch shape is provided, and a plurality of sensor chips with sensing area are connect places on this substrate, and electrically connect this sensor chip and this substrate with bonding wire;
Prepare a plurality of light penetrating objects, in respectively being formed with adhesion layer on this light penetrating object, and this adhesion layer has opening that should sensing area;
Those light penetrating objects are connect by this adhesion layer place this substrate, make respectively that this adhesion layer coats respectively this sensor chip periphery and this bonding wire, and expose the sensing area of this sensor chip, so that this light penetrating object capping this sensing area respectively respectively by this opening; And
Cut single job, to form a plurality of inductance semiconductor encapsulation parts.
9, the method for making of inductance semiconductor encapsulation part according to claim 8, wherein, this adhesion layer is for meeting hot material with low coefficient of viscosity.
10, the method for making of inductance semiconductor encapsulation part according to claim 9, wherein, this adhesion layer is the epoxy resin film.
11, the method for making of inductance semiconductor encapsulation part according to claim 8, wherein, this light penetrating object connects when placing this substrate by this adhesion layer, via this substrate of heating, make this adhesion layer then in this substrate the time, be the molten condition of hanging down coefficient of viscosity and coat this sensor chip periphery and this bonding wire, and expose the sensing area of this sensor chip, and in removing this adhesion layer cooling curing of thermal source relief, and make this this sensing area of light penetrating object capping.
12, a kind of method for making of inductance semiconductor encapsulation part comprises:
One substrate that is batch shape is provided, and a plurality of sensor chips with sensing area are connect places on this substrate, and electrically connect this sensor chip and this substrate with bonding wire;
Preparation whole piece formula light penetrating object is formed with adhesion layer in this light penetrating object, and this adhesion layer has a plurality of to opening that should sensing area;
This light penetrating object connect by this adhesion layer place this substrate, and make this adhesion layer coat this sensor chip periphery and this bonding wire, and expose the respectively sensing area of this sensor chip, and make this this sensing area of light penetrating object capping by this opening respectively; And
Cut single job, to form a plurality of inductance semiconductor encapsulation parts.
13, the method for making of inductance semiconductor encapsulation part according to claim 12, wherein, this adhesion layer is for meeting hot material with low coefficient of viscosity.
14, the method for making of inductance semiconductor encapsulation part according to claim 13, wherein, this adhesion layer is the epoxy resin film.
15, the method for making of inductance semiconductor encapsulation part according to claim 12, wherein, this light penetrating object connects when placing this substrate by this adhesion layer, via this substrate of heating, make this adhesion layer then in this substrate the time, be the molten condition of hanging down coefficient of viscosity and coat this sensor chip periphery and this bonding wire, and expose the sensing area of this sensor chip, and in removing this adhesion layer cooling curing of thermal source relief, and make this this sensing area of light penetrating object capping.
16, the method for making of inductance semiconductor encapsulation part according to claim 12, wherein, this adhesion layer has a plurality of second openings that correspondence is cut the line of cut of single job again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100037091A CN101494230A (en) | 2008-01-21 | 2008-01-21 | Sensing type semiconductor package and production method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100037091A CN101494230A (en) | 2008-01-21 | 2008-01-21 | Sensing type semiconductor package and production method thereof |
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| CN101494230A true CN101494230A (en) | 2009-07-29 |
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| CNA2008100037091A Pending CN101494230A (en) | 2008-01-21 | 2008-01-21 | Sensing type semiconductor package and production method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105704628A (en) * | 2014-10-02 | 2016-06-22 | 鑫创科技股份有限公司 | Microelectro-mechanical systems (MEMS) microphone package device and MEMS packaging method thereof |
| CN107145815A (en) * | 2016-03-01 | 2017-09-08 | 南茂科技股份有限公司 | Fingerprint identification packaging structure and manufacturing method thereof |
| CN108807296A (en) * | 2017-04-28 | 2018-11-13 | 叶秀慧 | Top has the chip-packaging structure and its manufacturing method of guide-joining plate |
| CN110021619A (en) * | 2019-05-17 | 2019-07-16 | 积高电子(无锡)有限公司 | Image sensor package structure and packaging method |
| CN110112163A (en) * | 2019-05-17 | 2019-08-09 | 积高电子(无锡)有限公司 | A kind of image sensor package structure and packaging method |
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2008
- 2008-01-21 CN CNA2008100037091A patent/CN101494230A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105704628A (en) * | 2014-10-02 | 2016-06-22 | 鑫创科技股份有限公司 | Microelectro-mechanical systems (MEMS) microphone package device and MEMS packaging method thereof |
| CN107145815A (en) * | 2016-03-01 | 2017-09-08 | 南茂科技股份有限公司 | Fingerprint identification packaging structure and manufacturing method thereof |
| CN108807296A (en) * | 2017-04-28 | 2018-11-13 | 叶秀慧 | Top has the chip-packaging structure and its manufacturing method of guide-joining plate |
| CN110021619A (en) * | 2019-05-17 | 2019-07-16 | 积高电子(无锡)有限公司 | Image sensor package structure and packaging method |
| CN110112163A (en) * | 2019-05-17 | 2019-08-09 | 积高电子(无锡)有限公司 | A kind of image sensor package structure and packaging method |
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