CN101494193B - Thin-film solar cell module and method of manufacturing the same - Google Patents
Thin-film solar cell module and method of manufacturing the same Download PDFInfo
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- CN101494193B CN101494193B CN 200810003767 CN200810003767A CN101494193B CN 101494193 B CN101494193 B CN 101494193B CN 200810003767 CN200810003767 CN 200810003767 CN 200810003767 A CN200810003767 A CN 200810003767A CN 101494193 B CN101494193 B CN 101494193B
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Abstract
The invention provides a thin-film solar cell module, at least comprising a first electrode, a second electrode and a photoelectric conversion layer. The first electrode is arranged on a substrate and consists of a plurality of first belt-shaped electrodes parallel extending along the X-direction. The second electrode is arranged above the first electrode and consists of a plurality of second belt-shaped electrodes parallel extending along the X-direction. The photoelectric conversion layer is arranged between the first electrode and the second electrode and consists of a plurality of belt-shaped photoelectric conversion material layers parallel extending along the X-direction, wherein, at least one Y-direction opening exposing the surface of the first electrode is respectively arranged near the two ends of the X-direction of the second electrode and the photoelectric conversion layer.
Description
Technical field
The invention relates to a kind of film solar battery module and manufacture method thereof, and particularly relevant for a kind of film solar battery module and manufacture method thereof that can in technology, detect film solar battery module.
Background technology
Solar energy be a kind of have never exhaust and the free of contamination energy, when solving pollution that present fossil energy faced and problem of shortage, be the focus that attracts most attention always.Wherein, can be electric energy directly with solar module again, and become present considerable research topic solar energy converting.Because thin-film solar cells (thin film solar cell) has low cost, easily large tracts of land production, and advantage such as modularization technology is simple, so the research and development of thin-film solar cells are to become new developing direction.
Along with the maximization of thin-film solar cells, as keeping the making of high conversion efficiency battery, quite high for the stability and the uniformity requirement of technology, this is because film solar battery module is based on cascaded structure.In series connected battery, when battery wherein takes place bad and when making the magnitude of current of this battery significantly reduce, determine because the electric current that battery module produced can be subjected to the battery of magnitude of current minimum, thereby make the generating efficiency of entire cell module significantly to descend thereupon.Therefore, and even in technology, film solar battery module is carried out detection on the line and carries out debug and have suitable importance.
Detection about film solar battery module, at US6,228,662, US6,365, a kind of detection method is proposed in 825, the method is to the film solar battery module by substrate/transparency electrode/photoelectric conversion layer/metal electrode constituted, utilize two probes or array probe to contact with the metal electrode of film solar battery module, provide revers voltage whether to produce short circuit by this because of the hole in the photoelectric conversion layer with the battery that detects wherein, and then by destroying the metal in the hole or making its oxidation to repair.
Yet, above-mentioned prior art is by probe is contacted to detect with metal electrode in the film solar battery module, its function only can only be checked the character of solar battery element when irradiation not, whether use understanding has short circuit to take place, but when the poor prognostic cause of film solar battery module is when coming from transparency electrode, for the film solar battery module that forms substrate/transparency electrode/photoelectric conversion layer/metal electrode structure, previous technology also can't effectively detect transparency electrode wherein, and also can't detect bad transparency electrode takes place, and can't understand the real light transfer characteristic of element really.
Summary of the invention
Because above-mentioned problem the object of the present invention is to provide a kind of film solar battery module, can carry out electrical detection to the electrode that connects substrate in the film solar battery module.
Another object of the present invention is to provide a kind of manufacture method of film solar battery module, can continue to use the technology of existing film solar battery module.
The present invention proposes a kind of manufacture method of film solar battery module.At first on substrate, form first electrode material layer.Then remove part first electrode material layer, to form many first directions X openings that first electrode material layer can be separated into many first band electrodes that are parallel to each other.Form the photoelectric conversion material layer then with the covered substrate and first band electrode.Remove part photoelectric conversion material layer, be parallel to many second directions X openings of the first directions X opening to form, and make the photoelectric conversion material layer form photoelectric conversion layer in first band electrode top thereafter.Form second electrode material layer afterwards to cover photoelectric conversion layer, first band electrode and substrate.Remove part second electrode material layer exposes the opto-electronic conversion laminar surface with formation many articles the 3rd directions X openings that are parallel to the first directions X opening then, so that second electrode material layer forms many second band electrodes, and near the both ends of the directions X in second electrode material layer and photoelectric conversion layer, remove part second electrode material layer and part photoelectric conversion layer along the Y direction, respectively form a Y direction opening that exposes the first band electrode surface so that be less than both ends.
In the manufacture method of above-mentioned film solar battery module, in the step that removes part photoelectric conversion material layer, the length of the second directions X opening is less than the length of the first directions X opening, and the both ends of the directions X of photoelectric conversion material layer are connected to each other in the Y direction.
In the manufacture method of above-mentioned film solar battery module, first, second, third directions X opening and Y direction opening are to utilize the laser cutting mode to prepare.
In the manufacture method of above-mentioned film solar battery module, first electrode material layer is an including transparent conducting oxide layer, and the material of including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
In the manufacture method of above-mentioned film solar battery module, the photoelectric conversion material layer is single layer structure or stack layer structure, and the composition material of photoelectric conversion material layer is P type semiconductor, intrinsic semiconductor or N type semiconductor material.
In the manufacture method of above-mentioned film solar battery module, the photoelectric conversion material layer comprises silicon, and the crystallization mode of silicon is amorphous silicon, monocrystalline silicon or polysilicon.
In the manufacture method of above-mentioned film solar battery module, second electrode material layer is that metal level or metal and transparency electrode combine, and the material of metal level comprises aluminium, silver, copper, molybdenum or its alloy, and its material of transparency electrode comprises zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (indium tinoXide, ITO) or indium oxide (In
2O
3).
The present invention proposes a kind of film solar battery module in addition, comprises first electrode, second electrode and photoelectric conversion layer.First electrode is configured on the substrate, and first electrode is made up of many first band electrodes of extending along directions X and be arranged in parallel.Second electrode is configured in first electrode top, and second electrode is made up of many second band electrodes of extending along directions X and be arranged in parallel.Photoelectric conversion layer is disposed between first electrode and second electrode, and photoelectric conversion layer is made up of the multi-ribbon shape photoelectric conversion material layer that extends along directions X and be arranged in parallel.Wherein at least respectively has a Y direction opening that exposes first electrode surface near the both ends of the directions X in second electrode and photoelectric conversion layer.
In above-mentioned film solar battery module, the both ends of the directions X of photoelectric conversion layer are connected to each other in the Y direction.
In above-mentioned film solar battery module, first electrode is an including transparent conducting oxide layer, and the material of including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
In above-mentioned film solar battery module, photoelectric conversion layer is single layer structure or stack layer structure, and the composition material of photoelectric conversion material layer is P type semiconductor, intrinsic semiconductor or N type semiconductor material.
In above-mentioned film solar battery module, the photoelectric conversion material layer comprises silicon, and the crystallization mode of silicon is amorphous silicon, monocrystalline silicon or polysilicon.
In above-mentioned film solar battery module, second electrode is that metal level or metal and transparency electrode combine, and the material of metal level comprises aluminium, silver, copper, molybdenum or its alloy, and its material of transparency electrode comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
Film solar battery module of the present invention is formed with the Y direction opening that exposes first electrode, so the present invention can carry out various electrical detection to first electrode (transparency electrode) that connects substrate in the film solar battery module.
And, in film solar battery module of the present invention, since the both ends of the directions X of photoelectric conversion layer in the Y direction for being connected to each other, and the Y direction opening that exposes first electrode forms a barrier layer respectively with second electrode and photoelectric conversion layer at the most last both ends of directions X, can stop entering of aqueous vapor and oxygen.
In addition,, therefore can continue to use the technology of existing thin-film solar cells, have easy manufacturing, can increase manufacture cost and other advantages hardly because film solar battery module of the present invention only can be reached by laser cutting parameter being done a little change.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly also is described in detail as follows.
Description of drawings
Fig. 1 is to the schematic flow sheet of the manufacture method that Figure 6 shows that the film solar battery module that illustrates according to one embodiment of the invention.Wherein, the subgraph of Fig. 1 to Fig. 6 (a) illustrates schematic top plan view, subgraph (b) and (e) be the generalized section that illustrates along hatching I-I ', subgraph (c) and (f) be the generalized section that illustrates along hatching II-II ', subgraph (d) is the generalized section that illustrates along hatching III-III '.
Fig. 7 is for carrying out a kind of schematic diagram of electrical detection to film solar battery module of the present invention.Wherein, Fig. 7 (a) illustrates schematic top plan view, and Fig. 7 (b) is the generalized section that illustrates along hatching III-III '.
Fig. 8 is for carrying out the schematic diagram of another kind of electrical detection to film solar battery module of the present invention.Wherein, Fig. 8 (a) illustrates schematic top plan view, and Fig. 8 (b) is the generalized section that illustrates along hatching III-III '.
The main element symbol description
100: film solar battery module
101: battery
102: substrate
104: the first electrode material layers
104a: first electrode
104b: the first directions X opening
106: the photoelectric conversion material layer
106a: photoelectric conversion layer
106b: the second directions X opening
108: the second electrode material layers
108a: second electrode
108b: the 3rd directions X opening
108c:Y direction opening
110,112,114,116: probe
Embodiment
Fig. 1 to Fig. 6 is the schematic flow sheet according to the manufacture method of the film solar battery module that one embodiment of the invention illustrated.Wherein, the subgraph of Fig. 1 to Fig. 6 (a) is to illustrate schematic top plan view, subgraph (b) and (e) be the generalized section that illustrates along hatching I-I ', subgraph (c) and (f) be the generalized section that illustrates along hatching II-II '.Subgraph (d) is the generalized section that illustrates along hatching III-III '.
At first, please be simultaneously with reference to Fig. 6 (a), Fig. 6 (b), Fig. 6 (c) and Fig. 6 (d), the film solar battery module 100 of present embodiment has many batteries 101 that are one another in series in the Y direction.The first electrode 104a, the second electrode 108a and photoelectric conversion layer 106a that film solar battery module 100 comprises substrate 102 and is disposed at its top.Wherein, the first electrode 104a for example is a transparency electrode, and it directly is configured on the substrate 102, and is made up of many first band electrodes of extending along directions X and be arranged in parallel.The second electrode 108a for example is a metal electrode, and it is configured in first electrode 104a top, and is made up of many second band electrodes of extending along directions X and be arranged in parallel.And the first band electrode 104a, the second band electrode 108a dispose in the translation mode.In addition, photoelectric conversion layer 106a is disposed between the first electrode 104a and the second electrode 108a, and photoelectric conversion layer 106a is made up of the multi-ribbon shape photoelectric conversion material layer that is arranged in parallel.
And, please continue with reference to Fig. 6, with shown in Fig. 6 (d), wherein near the both ends of the directions X in the second electrode 108a and photoelectric conversion layer 106a, at least respectively have a Y direction opening 108c who exposes the first electrode 104a surface as Fig. 6 (a).In addition, shown in Fig. 6 (c), wherein the both ends of the directions X of photoelectric conversion layer 106a are interconnected in the Y direction.
See also Fig. 6 (d),, therefore can carry out electrical detection to the first electrode 104a (transparency electrode) as described later because the film solar battery module of present embodiment has the Y direction opening 108c that exposes the first electrode 104a surface.And, because the both ends of the directions X of photoelectric conversion layer 106a are connected to each other in the Y direction, and the Y direction opening 108c that exposes the first electrode 104a forms a barrier layer respectively with the second electrode 108a and photoelectric conversion layer 106a at the most last both ends of directions X, thereby can stop entering of aqueous vapor and oxygen.
Below, describe the manufacture method of the film solar battery module 100 of present embodiment in detail with Fig. 1 to Fig. 6.
At first, please provide substrate 102 simultaneously with reference to Fig. 1 (a) and Fig. 1 (b).Wherein the material of this substrate 102 for example is glass or other transparent material.Then, on substrate 102, form first electrode material layer 104.First electrode material layer 104 for example be transparent conductive oxide (transparent conductiveoxide,
TCO) film, its material for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (indium tin oxide, ITO) or indium oxide (In
2O
3).The formation method of first electrode material layer 104 for example is to utilize chemical vapour deposition technique (CVD method), sputtering method (sputtering method) or additive method to prepare.
Then, ask the while with reference to Fig. 2 (a) and Fig. 2 (b), in first electrode material layer 104, many first directions X opening 104b that formation can be separated into first electrode material layer 104 many first band electrode 104a and be parallel to each other.The formation method of directions X opening 104b wherein for example is to utilize laser cutting (laser scribing) technology to remove part first electrode material layer 104 and form.
Then, please above substrate 102, form one deck photoelectric conversion material layer 106 simultaneously with reference to Fig. 3 (a) and Fig. 3 (b).This photoelectric conversion material layer 106 can cover the substrate 102 and the first band electrode 104a.Photoelectric conversion layer 106 can be single layer structure or stack layer structure.The composition material of photoelectric conversion material layer 106 for example is P type semiconductor, intrinsic semiconductor or N type semiconductor material.And photoelectric conversion material layer 106 comprises silicon, and the crystallization mode of silicon for example is amorphous silicon, monocrystalline silicon or polysilicon.The formation method of photoelectric conversion material layer 106 for example is to utilize chemical vapour deposition technique or other method to prepare.
Afterwards, please be simultaneously with reference to Fig. 4 (a), Fig. 4 (b) and Fig. 4 (c), remove part photoelectric conversion material layer 106, form many second directions X opening 106b that are parallel to the first directions X opening 104b in first band electrode 104a top, wherein the second directions X opening 106b is separated into multi-ribbon shape photoelectric conversion material layer 106a with photoelectric conversion material layer 106.And the length that is shorter in length than the first directions X opening 104b of the above-mentioned formed second directions X opening 106b is so that the two ends of second directions X of formed photoelectric conversion layer 106a are connected to each other in the Y direction.The formation method of the above-mentioned second directions X opening 106b for example is to utilize laser cutting parameter to remove part photoelectric conversion material layer 106 and form.
Continue it, please above substrate 102, form one deck second electrode material layer 108 simultaneously with reference to Fig. 5 (a), Fig. 5 (b) and Fig. 5 (c).This second electrode material layer 108 for example is a metal level, and it can cover photoelectric conversion layer 106a, the first band electrode 104a and substrate 102.Second electrode material layer 108 for example is the electrode that metal level or metal and transparency electrode combine, its metal layer material for example is aluminium (Al), silver (Ag), molybdenum (Mo), copper (Cu) or other metal or alloy that is fit to, and its material of transparency electrode for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (indium tin oxide, ITO) or indium oxide (In
2O
3).The formation method of second electrode material layer 108 for example is to utilize chemical vapour deposition technique, sputtering method or other method to prepare.
Subsequently, please refer to Fig. 6 (a), Fig. 6 (b), Fig. 6 (c) and Fig. 6 (d), in second electrode material layer 108, form many articles the 3rd directions X opening 108b of the parallel first directions X opening 104b, so that second electrode material layer 108 becomes multi-ribbon shape electrode 108a, and near the both ends of the directions X in electrode material layer 108 and photoelectric conversion layer 106a, remove partial electrode material layer 108 and part photoelectric conversion layer 106a along the Y direction, respectively form a Y direction opening 108c who exposes the first band electrode 104a surface so that be less than both ends.Wherein, the 3rd directions X opening 108b is by removing part second electrode material layer 108, forming until exposing photoelectric conversion layer 106a surface.In another example, shown in Fig. 6 (e) and Fig. 6 (f), opening 108b can also form until exposing first band electrode 104a surface by removing part second electrode material layer 108 and part photoelectric conversion layer 106a.As for Y direction opening 108c, then be by removing near part second electrode material layer 108 and the part photoelectric conversion layer 106a the 3rd directions X both ends along the Y direction, forming until exposing first band electrode 104a surface.Similarly, the 3rd directions X opening 108b and Y direction opening 108c can utilize laser cutting parameter to form.After each step on carry out, can finish the film solar battery module 100 of present embodiment.
By the technology of above-mentioned Fig. 1 to Fig. 6 as can be known, film solar battery module of the present invention only can be reached by laser cutting parameter being done a little change, therefore the technology of existing thin-film solar cells can be continued to use, extra novel technique and board need be do not imported.
Figure 7 shows that the schematic diagram that film solar battery module of the present invention is carried out electrical detection, wherein Fig. 7 (a) illustrates schematic top plan view, and Fig. 7 (b) is the generalized section that illustrates along hatching III-III '.When the technology of on production line, finishing Fig. 1 to Fig. 6 with after producing film solar battery module 100, can on production line, carry out the electrical detection of film solar battery module 100.Please be simultaneously with reference to Fig. 7 (a) and Fig. 7 (b), the first electrode 104a among the opening 108c of probe 110 and an end is contacted, and probe 112 contacted with the first electrode 104a among the other end opening 108c, can measure the resistance distribution situation of the first electrode 104a that is connected with substrate 102 in a battery 101 by this.Wherein.This probe 110 can electrically connect negative or positive electrode, and 112 electric connection probes of probe, 110 corresponding electrodes are to measure.
Figure 8 shows that the schematic diagram that film solar battery module of the present invention is carried out another kind of electrical detection, wherein Fig. 8 (a) illustrates schematic top plan view, and Fig. 8 (b) is the generalized section that illustrates along hatching III-III '.Same, this electrical detection can be carried out on production line.Please be simultaneously with reference to Fig. 8 (a) and Fig. 8 (b), probe 114 is contacted with the first electrode 104a among the opening 108c, and probe 116 contacted with the second electrode 108a, can measure the first electrode 104a in a battery 101 and the face that the connects resistance value of the second electrode 108a by this.Wherein.This probe 114 can electrically connect negative or positive electrode, and 116 electric connection probes of probe, 114 corresponding electrodes are to measure.
Film solar battery module 100 of the present invention is after the method for measurement via above-mentioned Fig. 7, Fig. 8 carries out electrical detection to film solar battery module 100 integral body, can in technology, detect the resistance uniformity of first electrode, the resistance distribution situation of first electrode and the face that the connects resistance value of first electrode and second electrode etc. and be relevant to the electrical characteristics of first electrode, and can detect the battery that wherein has problem by this, have debug technology that the battery of problem then can undertake by continuing and repair or get rid of.
In sum, because film solar battery module 100 of the present invention is formed with the Y direction opening 108c that exposes the first electrode 104a surface, so the present invention can carry out various electrical detection to the first electrode 104a (transparency electrode) that connects substrate 102 in the film solar battery module 100.
Moreover, in film solar battery module 100 of the present invention, because the both ends of the directions X of photoelectric conversion layer 106a are connected to each other in the Y direction, and the Y direction opening 108c that exposes the first electrode 104a forms a barrier layer respectively with the second electrode 108a and photoelectric conversion layer 106a at the most last both ends of directions X, can stop entering of aqueous vapor and oxygen.
Film solar battery module 100 of the present invention only can be reached by laser cutting parameter being done a little change, therefore can continue to use the technology of existing thin-film solar cells, thereby make film solar battery module 100 of the present invention have easy manufacturing, can increase manufacture cost and other advantages hardly.
In addition, film solar battery module 100 formed Y direction opening 108c of the present invention, the barrier material that can recharge is beneficial to the carrying out of follow-up encapsulation as the fixed position of aqueous vapor and oxygen barrier material.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (11)
1. the manufacture method of a film solar battery module comprises:
On substrate, form first electrode material layer;
Remove described first electrode material layer of part, to form many first directions X openings that described first electrode material layer can be separated into many first band electrodes that are parallel to each other;
Form the photoelectric conversion material layer, cover described substrate and described first band electrode;
Remove the described photoelectric conversion material layer of part, be parallel to many second directions X openings of the described first directions X opening in the top formation of described first band electrode, and make described photoelectric conversion material layer form photoelectric conversion layer;
Form second electrode material layer, cover described photoelectric conversion layer, described first band electrode and described substrate; And
Remove described second electrode material layer of part, expose many articles the 3rd directions X openings of the described first directions X opening of being parallel to of described opto-electronic conversion laminar surface with formation, so that described second electrode material layer forms many second band electrodes, and near the both ends of the directions X in described second electrode material layer and described photoelectric conversion layer, remove described third electrode material layer of part and the described photoelectric conversion layer of part along the Y direction, respectively form a Y direction opening that exposes the described first band electrode surface so that be less than described both ends.
2. the manufacture method of film solar battery module as claimed in claim 1, in the wherein said step that removes the described photoelectric conversion material layer of part, the length of the described second directions X opening is less than the length of the described first directions X opening, and the both ends of the directions X of described photoelectric conversion material layer are connected to each other in the Y direction.
3. the manufacture method of film solar battery module as claimed in claim 1, wherein said first, second, third directions X opening and described Y direction opening are to utilize the laser cutting mode to prepare.
4. the manufacture method of film solar battery module as claimed in claim 1, wherein said first electrode material layer is an including transparent conducting oxide layer, the material of described including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
5. the manufacture method of film solar battery module as claimed in claim 1, wherein said photoelectric conversion material layer is single layer structure or stack layer structure.
6. the manufacture method of film solar battery module as claimed in claim 1, the composition material of wherein said photoelectric conversion material layer is P type semiconductor, intrinsic semiconductor or N type semiconductor material.
7. the manufacture method of film solar battery module as claimed in claim 1, wherein said photoelectric conversion material layer comprises silicon, and the crystallization mode of silicon is amorphous silicon, monocrystalline silicon or polysilicon.
8. the manufacture method of film solar battery module as claimed in claim 1, wherein said second electrode material layer are the electrode that metal level or metal and transparency electrode combine.
9. the manufacture method of film solar battery module as claimed in claim 8, the material of wherein said metal level comprises aluminium, silver, copper, molybdenum or its alloy, and the material of described transparency electrode comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
10. film solar battery module comprises:
First electrode is configured on the substrate, and described first electrode is made up of many first band electrodes of extending along directions X and be arranged in parallel;
Second electrode is configured in described first electrode top, and described second electrode is made up of many second band electrodes of extending along directions X and be arranged in parallel; And
Photoelectric conversion layer is disposed between described first electrode and described second electrode, and described photoelectric conversion layer is made up of the multi-ribbon shape photoelectric conversion material layer that extends along directions X and be arranged in parallel,
Wherein at least respectively has a Y direction opening that exposes described first electrode surface near the both ends of the directions X in described second electrode and described photoelectric conversion layer.
11. film solar battery module as claimed in claim 10, the both ends of the directions X of wherein said photoelectric conversion layer are connected to each other in the Y direction.
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| CN 200810003767 CN101494193B (en) | 2008-01-22 | 2008-01-22 | Thin-film solar cell module and method of manufacturing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810003767 CN101494193B (en) | 2008-01-22 | 2008-01-22 | Thin-film solar cell module and method of manufacturing the same |
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| CN101494193A CN101494193A (en) | 2009-07-29 |
| CN101494193B true CN101494193B (en) | 2010-07-14 |
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| CN 200810003767 Expired - Fee Related CN101494193B (en) | 2008-01-22 | 2008-01-22 | Thin-film solar cell module and method of manufacturing the same |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201222841A (en) * | 2010-11-30 | 2012-06-01 | Ind Tech Res Inst | Solar cell module with current control and method of fabricating the same |
| KR101172252B1 (en) * | 2011-01-10 | 2012-08-08 | 한국철강 주식회사 | Tandem type Integrated Photovoltaic Module and Manufacturing Method Thereof |
| KR101203452B1 (en) * | 2011-02-25 | 2012-11-21 | 한국철강 주식회사 | Tandem Type Integrated Photovoltaic Module and Manufacturing Method Thereof |
| TW201248881A (en) * | 2011-05-20 | 2012-12-01 | Axuntek Solar Energy | Solar battery module and manufacturing method thereof |
| CN103000700B (en) * | 2011-09-15 | 2016-08-31 | 聚日（苏州）科技有限公司 | Solaode, connector, solar battery array and construction method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1246249A2 (en) * | 2001-03-29 | 2002-10-02 | Kaneka Corporation | Thin-film solar cell module of see-through type |
| CN1407634A (en) * | 2001-08-31 | 2003-04-02 | 松下电器产业株式会社 | Solar battery, and its manufacturing method and apparatus |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1246249A2 (en) * | 2001-03-29 | 2002-10-02 | Kaneka Corporation | Thin-film solar cell module of see-through type |
| CN1407634A (en) * | 2001-08-31 | 2003-04-02 | 松下电器产业株式会社 | Solar battery, and its manufacturing method and apparatus |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2002-299663A 2002.10.11 |
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