CN101494147A - Paster discharge tube and manufacturing technology - Google Patents
Paster discharge tube and manufacturing technology Download PDFInfo
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- CN101494147A CN101494147A CNA200910119158XA CN200910119158A CN101494147A CN 101494147 A CN101494147 A CN 101494147A CN A200910119158X A CNA200910119158X A CN A200910119158XA CN 200910119158 A CN200910119158 A CN 200910119158A CN 101494147 A CN101494147 A CN 101494147A
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Abstract
The invention discloses a patch electrical discharge tube and a production technology thereof. A product consists of internally sealed gas for electrical discharge, metal electrodes arranged at two ends of the discharge tube and a chip in the discharge tube. The discharge tube is a cylindrical glass tube and the metal electrodes are round. The production technology comprises the following steps: a) a Dumet wire head is provided with a lower die and simultaneously the preparation of installing an upper die on the Dumet wire is carried out so as to prepare the required metal electrodes; b) glass envelope die filling, chip die filling and the die assembly of the upper die and the lower die on the glass envelope are sequentially carried out to prepare and obtain an insulated glass envelope and an insulated chip; c) a glass sealing technology is used for sealing inert gas into a glass tube; d) ageing is carried out: aging with alternating current is utilized to eliminate the related impurity gas from the glass envelope and clean gas in the glass envelope; and e) electroplating is conducted: tin plating is conducted to the metal electrodes with a plating layer of 2 microns to 8 microns. The discharge tube has smaller volume and extremely small electric capacity between the electrodes, and is applicable to patch installation, and simultaneously has stable performance and long service life.
Description
Technical field
The invention belongs to the circuit protecting element technical field, relate to paster discharge tube, particularly a kind of paster discharge tube and manufacturing process thereof.
Background technology
Discharge tube is a kind of protection component that is used in the equipment input, if when the voltage at its two ends exceeds its protection specification value, short circuit phenomenon can appear in its inside, and sponges the high pressure of crossing of input.Paster discharge tube in the market mostly is the cermet structure.Under normal circumstances, discharge tube because of its distinctive high impedance (〉=100M Ω) and low electric capacity (≤1.0pF) characteristic, it as the protection component line attachment in the time, to the operate as normal of circuit almost without any adverse influence.When harmful instantaneous overvoltage is scurried into; the at first breakdown discharge of discharge tube; its impedance descends rapidly; almost be short-circuit condition; at this moment, discharge tube is let out harmful current to the earth by ground wire, simultaneously with voltage limit on the arc voltage of discharge tube; eliminate harmful instantaneous overvoltage and overcurrent, thereby protected circuit and element.After having served as loss of voltage, discharge tube returns to high impedance status again rapidly, and circuit continues operate as normal.
But existing discharge tube exists the deficiency that volume and weight is relatively large, installing space is also relatively large in actual applications, and simultaneously the velocity of discharge is slow, and poor reliability, the life-span is short, failure rate is high, can not satisfy the needs of equipment development protection such as electronics.
Summary of the invention
One of purpose of the present invention is to provide that a kind of volume and weight is little, stable performance and long paster discharge tube of life-span.
The present invention is realized by following technical proposal: paster discharge tube, comprise glass tube, be positioned at the Dumet wire electrode at glass bulb two ends, the discharge gas of the chip that is positioned at glass bulb and glass bulb encapsulation, wherein: described chip is the square Si chip that is made of the Si oxide material; Described Dumet wire electrode is "T"-shaped, and the external diameter of Dumet wire electrode electrode cap is suitable with the external diameter of described glass tube, the external diameter of electrode column is suitable with the internal diameter of described glass tube, and the electrode column length of two Dumet wire electrodes and the thickness sum of described Si chip are equivalent to the length of glass tube.
Discharge gas in the described discharge tube is that purity is higher than 99.99% inert gas.
The main component of described glass tube is K
2O, MO
2O and LiO, and percentage by weight≤6% of glass tube neutral and alkali thing.
After the present invention adopted said structure, the discharge tube interelectrode capacitance was very little, and the discharge tube volume dwindles the about 2～3mm of diameter, the about 6～8mm of length, suitable paster installation greatly.
The operation principle of this paster discharge tube is: when feeding a certain amount of voltage at the discharge tube two ends; the voltage that is added in the electrode two ends can produce a highfield heterogeneous near the chip microgap; continuous enhancing along with this electric field; the microgap place produces initiating electron; under the effect of electric field force; gas molecule collision in initiating electron and the discharge tube; ionization takes place; produce electronics and cation; and beginning is along the microgap discharge on chip microgap surface; faint initial drain arrives the metal electrode at two ends by the Si laminar flow of chip; increase along with discharging current; on Si layer matrix, produce bigger pressure drop; make near the gas ionization zone the microgap constantly enlarge; be extended down to the metal electrode place at last; so; the overwhelming majority discharging currents directly through gas ionization zone from the anode to the negative electrode; and the current ratio that flows through the Si chip is very little; thereby guarantee that chip can not burn because of the electric current of flowing through is excessive; when discharging current increases to certain intensity; above-mentioned glow discharge transfers arc discharge to, and the voltage at device two ends is clamped at a very level of low-voltage, thereby has played the effect of overvoltage protection.
Another object of the present invention is to provide a kind of manufacturing process of paster discharge tube.
Manufacturing process of the present invention is realized by following technical proposal:
A), at first the Dumet wire head is loaded mould, carry out the Dumet wire head simultaneously and load onto mould and prepare, make required metal electrode;
B), successively by glass bulb dress mould, chip dress mould and glass bulb upper and lower mould matched moulds, make the glass bulb and the chip of insulation;
C), by glass envelope technology, in glass tube, enclose inert gas;
D), wear out: utilize aging foreign gas relevant in the glass bulb, the gas in the clean shell removed of alternating current;
E), electroplate: the metal electrode to the product two ends carries out zinc-plated processing, and general coating is 2-8 μ m;
1), glass envelope machine vacuumizes, and heat while vacuumizing described glass envelope technology specifically comprises following operation:; 2), under temperature constant state, in glass bulb, charge into purity and be higher than 99.99% inert gas; 3), glass envelope machine is heated up; 4), under temperature constant state, in glass bulb, charge into 99.99% inert gas; 5), glass envelope machine is heated up; 6), under temperature constant state, in glass bulb, charge into body purity and be higher than 99.99% inert gas; 7), glass envelope machine is lowered the temperature; 8) after, the glass envelope finishes mould preparation is taken out glass and seal machine.
Wherein, the related temperature of each step is the parameter commonly used of glass envelope technology in the glass envelope technology, is that the technical staff changes in practical operation as required according to known technology general knowledge.
The invention has the beneficial effects as follows: the discharge tube volume is less, and interelectrode electric capacity is also minimum, and after tested, dc breakdown voltage can be accomplished: 100V-2000V, being fit to paster, that stable performance simultaneously, life-span be installed is long.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the structural representation of paster discharge tube of the present invention;
Fig. 2 is the flow chart of manufacturing process of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
With reference to shown in Figure 1, a kind of paster discharge tube, it is enclosed to discharge by inside and forms with the chip 3 of the discharge tube 1 of gas, the metal electrode 2 that is positioned at discharge tube 1 two ends and discharge tube 1, and described discharge tube 1 is columniform glass tube, and described metal electrode 2 is circular.The main component of described glass tube is K
2O, MO
2O and LiO, and percentage by weight≤6% of glass tube neutral and alkali thing.Described metal electrode 2 connects the Dumet wire lead-out wire, and its copper post mainly is made up of ferronickel heart yearn and copper covered steel wire.Discharge gas in the described discharge tube 1 is that purity is higher than 99.99% inert gas.The square Si chip that described chip 3 uses the Si oxide material to constitute.
The electric parameter of this paster discharge tube is as follows:
VS dc breakdown voltage: the DC voltage rising speed of power supply is 100V/S.
The V impact flashover voltage: the nominal climbing speed of voltage is 1KV/ μ s.
IR insulation resistance or leakage current: the value of insulation resistance or leakage current should test after stable.
The Cp electrostatic capacitance: test frequency is 10KHz.
Antisurge impact capacity: 8 * 20 μ s 100A 100 times.
With respect to existing paster discharge tube, volume of the present invention is less, and interelectrode electric capacity is also minimum, and after tested, dc breakdown voltage can be accomplished: 100V-2000V, and be fit to paster and install simultaneously, stable performance, life-span are long.
Manufacturing process of the present invention is as follows:
A), at first the Dumet wire head is loaded mould, carry out the Dumet wire head simultaneously and load onto mould and prepare, make required metal electrode.Dumet wire head material poured in the wire clamp (be as the criterion) to fill anchor clamps,
B), successively by glass bulb dress mould, chip dress mould and glass bulb upper and lower mould matched moulds, make the glass bulb and the chip of insulation.
Glass bulb dress mould: left hand is held the glass bulb anchor clamps, and the right hand inserts anchor clamps with baffle plate, then the glass bulb in the glass bulb box is poured in the anchor clamps, and button is slowly extracted baffle plate out, all falls in the lower clamp until glass bulb, takes out anchor clamps afterwards, and counterdie is filled up.
Chip dress mould: left hand holds up chip fixture, picks up the anchor clamps frame, aims at alignment pin, closes pilled-in selvedge frame and anchor clamps, and the right hand is poured chip into, and chip is to fill up the aperture of tool correspondence.
Glass bulb upper and lower mould matched moulds: the balance anchor clamps are set, put glass envelope counterdie well, make glass envelope counterdie to deciding the backstay of hole to the quasi-equilibrium anchor clamps, both hands are held chip fixture, turn over turnback, the chip fixture alignment pin is aimed at glass envelope counterdie location hole, and light button thereon, chip is fallen in the counterdie, taken out chip fixture then.To install mould on the lead-in wire, and turn over turnback, alignment pin is aimed at the location hole of glass envelope counterdie and is inverted thereon, and baffle plate is extracted out, and lead riser is packed in the counterdie.
C), by glass envelope technology, in glass tube, enclose inert gas.1), glass envelope machine vacuumizes comprises following operation:, vacuumize and heat; 2), under temperature constant state, in glass bulb, charge into purity and be higher than 99.99% inert gas; 3), glass envelope machine is heated up; 4), under temperature constant state, in glass bulb, charge into purity and be higher than 99.99% inert gas; 5), glass envelope machine is heated up; 6), under temperature constant state, in glass bulb, charge into purity and be higher than 99.99% inert gas; 7), glass envelope machine is lowered the temperature; 8) after, the glass envelope finishes mould preparation is taken out glass and seal machine.
The principle of glass envelope technology is: utilize the graphite anchor clamps of certain resistivity, pass to low-voltage and high-current, produce a large amount of heats glass bulb is melted, make it the oxide on surface driving fit with the Dumet wire head, enclose the gaseous species of the required pressure of product simultaneously.
D), wear out: utilize aging foreign gas relevant in the glass bulb, gas, the composition of stabilizing gas and the characteristic of product in the clean shell removed of alternating current.
E), electroplate: the metal electrode to the product two ends carries out zinc-plated processing, and general coating is 2-8 μ m, to increase antioxygenic property and solderability.
The foregoing description is the principle and the effect thereof of illustrative the invention only, and the embodiment of part utilization, but not is used to limit the present invention; Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the invention design, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (6)
1. paster discharge tube comprises glass tube, is positioned at the Dumet wire electrode at glass bulb two ends, the discharge gas of the chip that is positioned at glass bulb and glass bulb encapsulation that it is characterized in that: described chip is the square Si chip that is made of the Si oxide material; Described Dumet wire electrode is "T"-shaped, and the electrode cap external diameter of Dumet wire electrode is suitable with the external diameter of described glass tube, the external diameter of electrode column is suitable with the internal diameter of described glass tube, and the electrode column length of two Dumet wire electrodes and the thickness sum of described Si chip are equivalent to the length of glass tube.
2. paster discharge tube according to claim 1 is characterized in that: the discharge gas in the described discharge tube is that purity is higher than 99.99% inert gas.
3. paster discharge tube according to claim 1 is characterized in that: the main component of described glass tube is K
2O, MO
2O and LiO, and percentage by weight≤6% of glass tube neutral and alkali thing.
4. the manufacture craft of a paster discharge tube as claimed in claim 1 is characterized in that:
This manufacture craft comprises glass envelope technology, and described glass envelope technology comprises following steps:
1). glass envelope machine vacuumizes, and heats while vacuumizing;
2). under temperature constant state, in glass bulb, charge into sealing-in gas and purity is higher than 99.99% inert gas;
3). glass envelope machine is heated up;
4). under temperature constant state, in glass bulb, charge into purity and be higher than 99.99% inert gas;
5). glass envelope machine is heated up;
6). under temperature constant state, in glass bulb, charge into purity and be higher than 99.99% inert gas;
7). the cooling of glass envelope machine,
8). after the glass envelope finishes mould preparation is taken out glass and seal machine.
5. the manufacture craft of paster discharge tube according to claim 4, it is characterized in that: this manufacture craft also comprises aging step, utilizes promptly that alternating current is aging removes relevant foreign gas in the discharge tube that glass seals.
6. according to the manufacture craft of claim 4 or 5 described paster discharge tubes, it is characterized in that: described manufacture craft also comprises plating step, and the two end electrodes of the discharge tube after promptly glass being sealed, wears out is zinc-plated, and zinc-plated thickness is 2-8 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910119158.XA CN101494147B (en) | 2009-03-05 | 2009-03-05 | Plaster discharge tube and manufacturing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910119158.XA CN101494147B (en) | 2009-03-05 | 2009-03-05 | Plaster discharge tube and manufacturing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101494147A true CN101494147A (en) | 2009-07-29 |
| CN101494147B CN101494147B (en) | 2014-02-26 |
Family
ID=40924675
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910119158.XA Expired - Fee Related CN101494147B (en) | 2009-03-05 | 2009-03-05 | Plaster discharge tube and manufacturing technology |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436991A (en) * | 2011-08-05 | 2012-05-02 | 佛山市海欣光电科技有限公司 | Method for reducing electroplating thickness of electrode conducting rod |
| CN107481911A (en) * | 2017-08-13 | 2017-12-15 | 广东百圳君耀电子有限公司 | A kind of paster glass discharge vessel automatic aging activates machine |
| CN109300752A (en) * | 2018-09-30 | 2019-02-01 | 广东百圳君耀电子有限公司 | A kind of ceramic discharge tube automatic aging activation machine |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1072853C (en) * | 1995-01-06 | 2001-10-10 | 杨炳霖 | Surge absorption tube |
-
2009
- 2009-03-05 CN CN200910119158.XA patent/CN101494147B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436991A (en) * | 2011-08-05 | 2012-05-02 | 佛山市海欣光电科技有限公司 | Method for reducing electroplating thickness of electrode conducting rod |
| CN102436991B (en) * | 2011-08-05 | 2014-05-21 | 佛山市海欣光电科技有限公司 | Method for reducing electroplating thickness of electrode conducting rod |
| CN107481911A (en) * | 2017-08-13 | 2017-12-15 | 广东百圳君耀电子有限公司 | A kind of paster glass discharge vessel automatic aging activates machine |
| CN107481911B (en) * | 2017-08-13 | 2023-06-20 | 广东百圳君耀电子有限公司 | Automatic ageing activating machine for surface-mounted glass discharge tube |
| CN109300752A (en) * | 2018-09-30 | 2019-02-01 | 广东百圳君耀电子有限公司 | A kind of ceramic discharge tube automatic aging activation machine |
| CN109300752B (en) * | 2018-09-30 | 2023-10-20 | 广东百圳君耀电子有限公司 | Automatic ageing activating machine for ceramic discharge tube |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101494147B (en) | 2014-02-26 |
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Granted publication date: 20140226 Termination date: 20150305 |
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