CN101490202B - 金化学机械抛光组合物及方法 - Google Patents

金化学机械抛光组合物及方法 Download PDF

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Publication number
CN101490202B
CN101490202B CN200780027104XA CN200780027104A CN101490202B CN 101490202 B CN101490202 B CN 101490202B CN 200780027104X A CN200780027104X A CN 200780027104XA CN 200780027104 A CN200780027104 A CN 200780027104A CN 101490202 B CN101490202 B CN 101490202B
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CN
China
Prior art keywords
gold
chemical
mechanical polishing
polishing compositions
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200780027104XA
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English (en)
Chinese (zh)
Other versions
CN101490202A (zh
Inventor
弗拉斯塔·布鲁希克
周仁杰
克里斯托弗·汤普森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN101490202A publication Critical patent/CN101490202A/zh
Application granted granted Critical
Publication of CN101490202B publication Critical patent/CN101490202B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200780027104XA 2006-05-31 2007-05-22 金化学机械抛光组合物及方法 Expired - Fee Related CN101490202B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/444,866 2006-05-31
US11/444,866 US7368066B2 (en) 2006-05-31 2006-05-31 Gold CMP composition and method
PCT/US2007/012149 WO2007142815A1 (en) 2006-05-31 2007-05-22 Gold cmp composition and method

Publications (2)

Publication Number Publication Date
CN101490202A CN101490202A (zh) 2009-07-22
CN101490202B true CN101490202B (zh) 2012-09-05

Family

ID=38788879

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780027104XA Expired - Fee Related CN101490202B (zh) 2006-05-31 2007-05-22 金化学机械抛光组合物及方法

Country Status (6)

Country Link
US (2) US7368066B2 (enExample)
JP (1) JP5524612B2 (enExample)
KR (1) KR101386305B1 (enExample)
CN (1) CN101490202B (enExample)
TW (1) TWI370162B (enExample)
WO (1) WO2007142815A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160122590A1 (en) * 2014-10-31 2016-05-05 Air Products And Chemicals, Inc. Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用
JP2023107620A (ja) * 2022-01-24 2023-08-03 株式会社大和化成研究所 金の浸漬剥離液及び金の剥離方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1753961A (zh) * 2003-02-27 2006-03-29 卡伯特微电子公司 包括磺酸的cmp组合物和用于抛光贵金属的方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5044128A (en) 1990-06-27 1991-09-03 Priority Co., Ltd. Magnetically-polishing machine and process
US5626715A (en) 1993-02-05 1997-05-06 Lsi Logic Corporation Methods of polishing semiconductor substrates
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5691219A (en) 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5693239A (en) 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
JPH09190626A (ja) 1995-11-10 1997-07-22 Kao Corp 研磨材組成物、磁気記録媒体用基板及びその製造方法並びに磁気記録媒体
US6126853A (en) 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6093649A (en) 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6274063B1 (en) 1998-11-06 2001-08-14 Hmt Technology Corporation Metal polishing composition
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
US6350678B1 (en) * 1999-09-17 2002-02-26 Advanced Micro Devices, Inc. Chemical-mechanical polishing of semiconductors
US6293848B1 (en) 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
EP1252247A1 (en) 1999-12-14 2002-10-30 Rodel Holdings, Inc. Polishing compositions for semiconductor substrates
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6527622B1 (en) 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US6732017B2 (en) * 2002-02-15 2004-05-04 Lam Research Corp. System and method for point of use delivery, control and mixing chemical and slurry for CMP/cleaning system
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
US7160807B2 (en) * 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1753961A (zh) * 2003-02-27 2006-03-29 卡伯特微电子公司 包括磺酸的cmp组合物和用于抛光贵金属的方法

Also Published As

Publication number Publication date
JP2009539253A (ja) 2009-11-12
KR101386305B1 (ko) 2014-04-17
US20080156774A1 (en) 2008-07-03
US7368066B2 (en) 2008-05-06
WO2007142815A1 (en) 2007-12-13
KR20090013835A (ko) 2009-02-05
CN101490202A (zh) 2009-07-22
JP5524612B2 (ja) 2014-06-18
US20070278184A1 (en) 2007-12-06
TW200804549A (en) 2008-01-16
TWI370162B (en) 2012-08-11

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120905

Termination date: 20160522

CF01 Termination of patent right due to non-payment of annual fee