CN101488511B

CN101488511B - Solid-state image pickup device and fabrication method therefor

Info

Publication number: CN101488511B
Application number: CN2009100010017A
Authority: CN
Inventors: 小林悠作; 渡部浩司; 林利彦
Original assignee: Sony Corp
Current assignee: Sony Semiconductor Solutions Corp
Priority date: 2008-01-17
Filing date: 2009-01-16
Publication date: 2012-06-13
Anticipated expiration: 2029-01-16
Also published as: TW200937626A; TWI394268B; CN101488511A; JP5493316B2; JP2009194361A

Abstract

Disclosed herein are a solid-state image pickup device and a making method therefor. The solid-state image pickup device includes, a light receiving pixel section, a black level reference pixel section, a multi-layer wiring line section containing the first to fourth metal wiring line layer, a first light blocking film, a second light blocking film, a third light blocking film, and a fourth light blocking layer. Some first metal wiring lines in the first metal wiring line layer are spaced each other in a predetermined distance and arranged above the black level reference pixel section according to a plurality of rows to form the first light blocking film, some second metal wiring lines in the second metal wiring line layer are arranged among the first metal wiring lines above to form the second light blocking film, some third metal wiring lines in the third metal wiring line layer are spaced each other in a predetermined distance in the direction perpendicular to the second light blocking film and arranged above the black level reference pixel section according to a plurality of rows to form the third light blocking film, some fourth metal wiring lines in the fourth metal wiring line layer are arranged among the third metal wiring lines above to form the fourth light blocking film.

Description

Solid camera head and manufacturing approach thereof

The cross reference of related application

The present invention comprises the Japanese patent application JP 2008-231782 theme of submitting to Japan Patent office with on September 10th, 2008 and on January 17th, 2008 relevant with JP 2008-007730, incorporates this paper into as a reference at this full content with these two Japanese patent applications.

Technical field

The present invention relates to solid camera head and manufacturing approach thereof.

Background technology

At the CMOS of one of imageing sensor (complementary metal oxide semiconductors (CMOS); Complementary Metal Oxide Semiconductor) in the type solid camera head; Do not allow the zone of light incident; For example, be constituted as and be used to limit and utilize metal line or filter to come shielded from light usually as the black-level reference pixel portions zone or the peripheral circuit area of the black of color references.For example, as the photomask that is formed by metal line, the wiring with big live width of tens μ m～100 μ m is disposed in the superiors place that is positioned at black-level reference pixel portions top, thereby realizes interception.

Below with reference to Figure 15 and Figure 16 A and Figure 16 B; The example of explanation photomask of formed black-level reference pixel portions in the copper wiring step of multilayer wiring portion or aluminum wiring step; Figure 15 is the schematic sectional view of cmos image sensor in the prior art, and Figure 16 A and Figure 16 B show the stereogram and the sectional view of the part photomask of cmos image sensor among Figure 15.

With reference to Figure 15 and Figure 16 A and Figure 16 B; Shown in the cmos image sensor of prior art comprise: the light-receiving pixel portions 112 and the black-level reference pixel portions 113 that on semiconductor substrate 111, form, and the multilayer wiring portion 114 that on the upper face of light-receiving pixel portions 112 and black-level reference pixel portions 113, forms by photodiode.This cmos image sensor for example is disclosed among the open communique No.2006-294991 of Japan Patent.

Multilayer wiring portion 114 comprises multi-layer metal wiring 130 and is used for the interlayer dielectric 140 that these metal lines 130 is insulated from each other, and the thickness direction of this multi-layer metal wiring 130 from semiconductor substrate 111 1 sides along multilayer wiring portion 114 is formed with stacked relation and for example comprises metal line 131,132,133 and 134.

Layer of metal wiring therein 130 is metal line 134 and for example in the interlayer dielectric between the metal line 133 140 (143), be formed with contact plunger (contact plug) 151 at another layer metal line 130 of metal line 134 lower floors for example.Contact plunger 151 passes interlayer dielectric 143, and metal line 134 and the metal line 133 that is in lower floor with respect to metal line 134 are coupled together.

In addition, to be formed and to cover that layer metal line 130 that is positioned at the superiors be on the upper face of metal line 134 to interlayer dielectric 145.The pad 161 that is for example formed by aluminium (Al) is formed on the upper face of interlayer dielectric 145, and is used for and being electrically connected of peripheral circuit (not shown) etc.

In addition, at pad 161 and be arranged in the interlayer dielectric 145 between the metal line 134 (134c) under the pad 161, be provided with the contact plunger 152 that for example forms by aluminium (Al).Contact plunger 152 extends through interlayer dielectric 145, thereby pad 161 and metal line 134c are interconnected.

In addition, the photodiode that metal line 134 (134a) is formed with black-level reference pixel portions 113 is opposing relation, and as being used for the photomask that block light is incident to the photodiode area of black-level reference pixel portions 113.

The photomask of prior art is constructed to, and the wiring (metal line 134a) with big width of tens μ m～100 μ m only is arranged in the superiors' wiring layer, and wiring pattern is not set in other wiring layer.

The high integration of large scale integrated circuit (LSI) makes wiring become meticulous; Simultaneously also impel the film thickness of wiring to reduce; And proposed according to ITRS blueprints (international technology roadmap for semiconductors) in 2005; The wiring membrane thickness in the intermediate layer in this generation of 90nm LSI is 225nm, and the wiring membrane thickness in the intermediate layer in this generation of 65nm LSI is 170nm.

Along with the raising of the integrated level of LSI, the thickness of photomask itself also will reduce.For example; Be known that; The wiring membrane thickness in the intermediate layer in this generation of the 90nm LSI that was proposed in the ITRS blueprint in 2005 is under the situation of 225nm; Photomask has and is about-transmissivity of 130dB, and the wiring membrane thickness in the intermediate layer in this generation of 65nm LSI is under the situation of 170nm, and photomask has and is about-another transmissivity of 90dB and have the shading performance of deterioration.

In addition, in order to reduce wiring impedance, adopted copper (Cu) wiring from this generation of 90nm.The copper wiring course of processing comprises the copper wiring planarisation step of carrying out through cmp (CMP, chemical-mechanical polishing).In CMP,, therefore,, then can make the shading performance degradation if this wiring is used as photomask because depression (dishing) or erosion (erosion) can make the film thickness of big width copper (Cu) wiring reduce.

In brief, along with the raising of the integrated level of LSI, the film thickness of photomask itself also will reduce, and the shading performance can deterioration.In addition, because the depression of the CMP of the course of processing that is used for connecting up or the film thickness that erosion can reduce photomask, so can make the shading performance degradation.

Summary of the invention

Therefore, expectation provides a kind of solid camera head, and wherein, photomask is caved in or the possibility of the influence of corroding is less and be suitable for the LSI in following each generation, also expects to provide the manufacturing approach of this solid camera head.

According to embodiments of the invention, a kind of solid camera head or first solid camera head are provided, it comprises: be formed at the light-receiving pixel portions on the semiconductor substrate; Be formed at the black-level reference pixel portions on the said semiconductor substrate; And be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises the insulating barrier that is formed on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier that these metal wiring layers comprise the first, second, third and the 4th metal wiring layer.This solid camera head also comprises: first photomask, and it forms above being arranged in said black-level reference pixel portions through some first metal lines with formed a plurality of first metal lines in said first metal wiring layer according to the relation that is spaced apart at a predetermined distance from each other and according to multirow; Second photomask; Its some second metal lines through formed a plurality of second metal lines in will said second metal wiring layer above said first metal wiring layer are arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines and form, and make and between said first photomask and said second photomask, can not find the gap when overlooking; The 3rd photomask, some the 3rd metal lines of its formed a plurality of the 3rd metal lines of said the 3rd metal wiring layer through will being arranged in said second metal wiring layer top form above being arranged in said black-level reference pixel portions according to the relation that is spaced apart at a predetermined distance from each other and according to multirow on the direction of said second photomask when overlooking; And the 4th photomask, its some the 4th metal lines through formed a plurality of the 4th metal lines in will said the 4th metal wiring layer above said the 3rd metal wiring layer are arranged between said the 3rd metal line above the said black-level reference pixel portions and above these the 3rd metal lines and form.

Because the said solid camera head or first solid camera head comprise said first photomask and said second photomask; Said first photomask be through some first metal lines of formed a plurality of said first metal lines in said first metal wiring layer among each metal wiring layer with the relation that is spaced apart at a predetermined distance from each other and be arranged in said black-level reference pixel portions top according to multirow and form; And said second photomask is to be arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines through some of formed a plurality of said second metal lines in will said second metal wiring layer above said first metal wiring layer to form; Therefore; When overlooking, said first and second photomasks are covered with said black-level reference pixel portions.In addition; Because said first solid camera head also comprises said the 3rd photomask and said the 4th photomask; Said the 3rd photomask is above being arranged in said black-level reference pixel portions to some the 3rd metal lines of formed a plurality of said the 3rd metal lines of said the 3rd metal wiring layer that are arranged in said second metal wiring layer top with the relation that is spaced apart at a predetermined distance from each other and according to multirow on perpendicular to the direction of said second photomask, to form; And said the 4th photomask is to be arranged between said the 3rd metal line above the said black-level reference pixel portions and above these the 3rd metal lines through some of formed a plurality of said the 4th metal lines in will said the 4th metal wiring layer above said the 3rd metal wiring layer to form; Therefore; When overlooking, said third and fourth photomask is covered with said black-level reference pixel portions.

In addition,, therefore improved the shading performance that can stop oblique incidence light, and light shield layer is formed by two metal wiring layers basically because said third and fourth photomask is formed on the direction perpendicular to said first and second photomasks.Therefore, compare, can increase the integral membrane thickness of photomask with the photomask that forms by single metal wiring layer in the prior art.

Therefore, even said metal wiring layer is formed by the layer that thickness reduces, said photomask also has suitable following each shading performance for LSI.

In addition, because first metal line of said first photomask is being arranged with the relation that is spaced apart at a predetermined distance from each other and according to multirow, therefore said first metal line can be formed and have the live width that can not cave in or corrode.Similarly, the metal line of said second, third and the 4th photomask also can be formed and have the live width that can not cave in or corrode.

Therefore, because said photomask can guarantee the film thickness be scheduled to, therefore can prevent the deterioration of shading performance.

In a word; The advantage of said first solid camera head is; Owing to improved the shading performance that can stop oblique incidence light, and photomask forms by two metal wiring layers basically, even therefore reduced the thickness that connects up through becoming more meticulous; Each photomask is formed by each film that the film with each wiring is in one deck, and this photomask also has suitable following each shading performance for LSI.

In addition; Because said metal line is formed and has the width that can not cave in or corrode; Therefore promptly use cmp to form photomask, the film thickness that also can guarantee photomask is the film thickness that is designed, and therefore can prevent the deterioration of shading performance.

According to another embodiment of the invention, a kind of solid camera head or second solid camera head are provided, it comprises: be formed at the light-receiving pixel portions on the semiconductor substrate; Be formed at the black-level reference pixel portions on the said semiconductor substrate; And be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises the insulating barrier that is formed on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier that these metal wiring layers comprise first and second metal wiring layers.This solid camera head also comprises: first photomask that is formed by some first metal lines; More said first metal line is from formed a plurality of first metal lines in said first metal wiring layer, and is arranged in said black-level reference pixel portions top according to the relation that is spaced apart at a predetermined distance from each other and according to multirow; And second photomask that forms by some second metal lines; More said second metal line is from formed a plurality of second metal lines of said second metal wiring layer that are arranged in said first metal wiring layer top; And be disposed in as in the lower area; This zone is included in the zone between said first metal line above the said black-level reference pixel portions and above these first metal lines; And, above said black-level reference pixel portions, be provided with complete said first and second photomasks according to multilayer.

Because the said solid camera head or second solid camera head comprise said first photomask and said second photomask; Said first photomask is above being arranged in said black-level reference pixel portions to some first metal lines of a plurality of said first metal line that forms in said first metal wiring layer among each metal wiring layer with the relation that is spaced apart at a predetermined distance from each other and according to multirow, to form; And said second photomask is to be arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines through some of formed a plurality of said second metal lines in will said second metal wiring layer above said first metal wiring layer to form; Therefore; When overlooking, said first and second photomasks are covered with said black-level reference pixel portions.

In addition; Owing to above said black-level reference pixel portions, be provided with said first and second photomasks of many covers; Therefore improved the shading performance that can stop oblique incidence light; And under the situation that is provided with said first and second photomasks of at least two covers, said photomask is formed by two metal wiring layers basically.Therefore, compare, can increase the integral membrane thickness of photomask with the photomask that forms by single metal wiring layer in the prior art.Certainly, under the situation that is provided with three the above first and second photomask of cover, the shading performance can be enhanced corresponding to tricks.

In addition, because first metal line of said first photomask is being arranged with the relation that is spaced apart at a predetermined distance from each other and according to multirow, therefore said first metal line can be formed and have the live width that can not cave in or corrode.Similarly, because second metal line of said second photomask is disposed between above-mentioned first metal line and above these first metal lines, therefore said second metal line is formed with the relation that is spaced apart at a predetermined distance from each other and according to multirow.Therefore, similar with first metal line of said first photomask, said second metal line also can be formed has the live width that can not cave in or corrode.

In a word; The advantage of said second solid camera head is; Because said photomask is formed by two metal wiring layers basically; Even therefore reduced the thickness of wiring through becoming more meticulous, each photomask is formed by each film that the film with each wiring is in one deck, and this photomask has suitable following each shading performance for LSI.

In addition, because said metal line is formed and has the width that can not cave in or corrode, promptly use cmp to form photomask, the film thickness that also can guarantee photomask is the film thickness that is designed, and therefore can prevent the deterioration of shading performance.

According to still a further embodiment, a kind of method for manufacturing solid-state imaging device or first manufacturing approach are provided, said solid camera head comprises: be formed at the light-receiving pixel portions on the semiconductor substrate; Be formed at the black-level reference pixel portions on the said semiconductor substrate; And be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises the insulating barrier that is formed on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier; These metal wiring layers comprise the first, second, third and the 4th metal wiring layer; When said method for manufacturing solid-state imaging device comprises the steps: in said first metal wiring layer to form a plurality of first metal line; Some first metal lines of a plurality of said first metal lines are arranged in said black-level reference pixel portions top according to the relation that is spaced apart at a predetermined distance from each other and according to multirow, thereby form first photomask; When said second metal wiring layer above being arranged in said first metal wiring layer forms a plurality of second metal line; Some second metal lines of a plurality of said second metal lines are arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines; Thereby form second photomask, make and between said first photomask and said second photomask, can not find the gap when overlooking; When said the 3rd metal wiring layer above being arranged in said second metal wiring layer forms a plurality of the 3rd metal line; With some the 3rd metal lines of a plurality of said the 3rd metal lines when overlooking perpendicular to being arranged in above the said black-level reference pixel portions according to the relation that is spaced apart at a predetermined distance from each other and according to multirow on the direction of said second photomask, thereby form the 3rd photomask; And said the 4th metal wiring layer above being arranged in said the 3rd metal wiring layer is when forming a plurality of the 4th metal line; Some the 4th metal lines of a plurality of said the 4th metal lines are arranged between said the 3rd metal line above the said black-level reference pixel portions and above these the 3rd metal lines, thereby form the 4th photomask.

In the above-mentioned method for manufacturing solid-state imaging device or first manufacturing approach; When forming a plurality of first metal line in said first metal wiring layer among each metal wiring layer; Some first metal lines of a plurality of said first metal lines are arranged in said black-level reference pixel portions top with the relation that is spaced apart at a predetermined distance from each other and according to multirow, thereby form first photomask.Then; When said second metal wiring layer above being arranged in said first metal wiring layer forms a plurality of second metal line; Some of a plurality of said second metal lines are arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines, thereby form second photomask.Therefore, when overlooking, said first and second photomasks are covered with said black-level reference pixel portions.

In addition; When said the 3rd metal wiring layer above being arranged in said second metal wiring layer forms a plurality of the 3rd metal line; Some the 3rd metal lines of a plurality of said the 3rd metal lines are arranged in the relation that is spaced apart at a predetermined distance from each other and according to multirow on perpendicular to the direction of said second photomask above the said black-level reference pixel portions, thereby form the 3rd photomask.Then; When said the 4th metal wiring layer above being arranged in said the 3rd metal wiring layer forms a plurality of the 4th metal line; Some of a plurality of said the 4th metal lines are arranged between said the 3rd metal line above the said black-level reference pixel portions and above these the 3rd metal lines, thereby form the 4th photomask.Therefore, when overlooking, said third and fourth photomask is covered with said black-level reference pixel portions.

Therefore, even said metal wiring layer is formed by the layer of less thickness, said photomask also have be fit to following respectively for shading performance of LSI.

In addition, because first metal line of said first photomask is being arranged with the relation that is spaced apart at a predetermined distance from each other and according to multirow, therefore said first metal line can be formed and have the live width that can not cave in or corrode.Similarly, second metal line of said second photomask also can be formed and have the live width that can not cave in or corrode.

In a word; The advantage that is used to make first manufacturing approach of solid camera head is; Even reduced the thickness of wiring through becoming more meticulous, each photomask is formed by each film that the film with each wiring is in one deck, and this photomask also has suitable following each shading performance for LSI.In addition, can improve the shading performance that can stop oblique incidence light.

In addition, because said metal line is formed and has the width that can not cave in or corrode, therefore promptly use cmp to form photomask, the film thickness that also can guarantee photomask is the film thickness that is designed, and therefore, can prevent the deterioration of shading performance.

According to still another embodiment of the invention, a kind of method for manufacturing solid-state imaging device or second manufacturing approach are provided, said solid camera head comprises: be formed at the light-receiving pixel portions on the semiconductor substrate; Be formed at the black-level reference pixel portions on the said semiconductor substrate; And be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises and is formed at the insulating barrier on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier; These metal wiring layers comprise first and second metal wiring layers; When said method for manufacturing solid-state imaging device comprises the steps: in said first metal wiring layer to form a plurality of first metal line; Form first photomask by some first metal lines; More said first metal line is from a plurality of said first metal lines, and is arranged in said black-level reference pixel portions top according to the relation that is spaced apart at a predetermined distance from each other and according to multirow; And said second metal wiring layer above being arranged in said first metal wiring layer is when forming a plurality of second metal line; Form second photomask by some second metal lines; More said second metal line is from a plurality of said second metal lines; And be disposed between said first metal line above the said black-level reference pixel portions and above these first metal lines; And, above said black-level reference pixel portions, complete said first and second photomasks are set times without number according to multilayer.

In the above-mentioned method for manufacturing solid-state imaging device or second manufacturing approach; When forming a plurality of first metal line in said first metal wiring layer among each metal wiring layer; Some first metal lines of a plurality of said first metal lines are arranged in said black-level reference pixel portions top with the relation of the predetermined space that separates each other and according to multirow, thereby form first photomask.Then; When said second metal wiring layer above being arranged in said first metal wiring layer forms a plurality of second metal line; Some of a plurality of said second metal lines are arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines, thereby form second photomask.Therefore, when overlooking, said first and second photomasks are covered with said black-level reference pixel portions.

In addition, owing on the black-level reference pixel portions, carry out the complete step that is used to form first photomask repeatedly and be used to form the step of second photomask, so light shield layer is formed by two metal wiring layers basically.Therefore, compare, can increase the integral membrane thickness of photomask with the photomask that forms by single metal wiring layer in the prior art.Certainly, under the situation that is provided with first and second photomasks more than three covers, the shading performance can be enhanced corresponding to tricks.

In addition, because first metal line that will said first photomask is being arranged with the relation that is spaced apart at a predetermined distance from each other and according to multirow, so said first metal line can be formed and has the live width that can not cave in or corrode.Similarly; Also because second metal line that will said second photomask is arranged between above-mentioned first metal line and above these first metal lines, so second metal line of said second photomask is formed with the relation that is spaced apart at a predetermined distance from each other and according to multirow.Therefore, similar with first metal line of said first photomask, said second metal line also can be formed has the live width that can not cave in or corrode.

In a word; The advantage that is used to make second manufacturing approach of solid camera head is; Even reduced the thickness of wiring through becoming more meticulous, each photomask is formed by each film that the film with each wiring is in one deck, and photomask also has suitable following each shading performance for LSI.

In addition, because photomask is formed and has the width that can not cave in or corrode, therefore promptly use cmp to form photomask, the film thickness that also can guarantee photomask is the film thickness that is designed, and therefore can prevent the deterioration of shading performance.

Fig. 1 shows the schematic sectional view of general structure of first solid camera head of first embodiment of the invention;

Description of drawings

Fig. 2 A and Fig. 2 B illustrate the stereogram and the schematic sectional view of part photomask of first solid camera head of Fig. 1;

Fig. 3 shows the schematic sectional view of general structure of first solid camera head of second embodiment of the invention;

Fig. 4 A and Fig. 4 B illustrate the stereogram and the schematic sectional view of part photomask of first solid camera head of Fig. 3;

Fig. 5 and Fig. 6 illustrate when incident light during to the photomask oblique illumination schematic sectional view of the different shading states of photomask;

Fig. 7 shows the schematic sectional view of general structure of second solid camera head of third embodiment of the invention;

Fig. 8 A and Fig. 8 B illustrate the stereogram and the schematic sectional view of part photomask of second solid camera head of Fig. 7;

Fig. 9 shows the schematic sectional view of general structure of second solid camera head of fourth embodiment of the invention;

Figure 10 A and Figure 10 B illustrate the stereogram and the schematic sectional view of part photomask of second solid camera head of Fig. 9;

Figure 11 shows the schematic sectional view of general structure of the example of solid camera head, and wherein photomask is also as wiring;

Figure 12 shows the circuit diagram of the example of cmos image sensor;

Figure 13 illustrates in visible-range, and transmissivity is to the view of the actual measurement data of the dependence of wavelength;

Figure 14 illustrates under can be by the wavelength of transmission, and transmissivity is to the view of the actual measurement data of the dependence of film thickness;

Figure 15 shows the schematic sectional view of general structure of example of the solid camera head of prior art; And

Figure 16 A and Figure 16 B illustrate the stereogram and the schematic sectional view of the part photomask of solid camera head among Figure 15.

Embodiment

See figures.1.and.2 below first solid camera head of first embodiment of the invention is described.Fig. 1 shows the cmos image sensor as the example of solid camera head.

At first with reference to Fig. 1; The first shown solid camera head 1 comprises: the light-receiving pixel portions 12 and the black-level reference pixel portions 13 that on semiconductor substrate 11, form by photodiode, and the multilayer wiring portion 14 that on the upper face of light-receiving pixel portions 12 and black-level reference pixel portions 13, forms.

Multilayer wiring portion 14 comprises that thickness direction from semiconductor substrate 11 1 sides along multilayer wiring portion 14 is with stacked relation and a plurality of metal wiring layers 20 of forming with the relation that is spaced apart at a predetermined distance from each other.For example, these metal wiring layers 20 comprise first metal wiring layer 21, second metal wiring layer 22, the 3rd metal wiring layer 23 and the 4th metal wiring layer 24.Multilayer wiring portion 14 also comprises and is used for the interlayer dielectric 40 that these metal wiring layers 20 is insulated from each other.

These metal wiring layers 20 form by for example copper (Cu), aluminium (Al) or the tungsten metal lines such as (W) as the semiconductor device wiring material.In addition, interlayer dielectric 40 is for example by silica (SiO ₂) film formation.Interlayer dielectric 40 can also can be formed by the inorganic insulating membrane with light transmission, organic insulating film or similar film by forming by any material that metal line is insulated from each other.

For example the 4th metal wiring layer 24 and another metal wiring layer 20 below the 4th metal wiring layer 24 are formed with contact plunger 51 for example in the interlayer dielectric between the 3rd metal wiring layer 23 40 (44) at a metal wiring layer 20.Contact plunger 51 extends through interlayer dielectric 44, thereby the 3rd metal line 33 of the 4th metal line 34 that makes the 4th metal wiring layer 24 and following the 3rd metal wiring layer 23 interconnects.Certainly, although not shown, between other metal wiring layers, also there is the metal line that connects through the contact plunger between the metal line.

In addition, interlayer dielectric 45 is formed and covers that metal wiring layer 20 promptly on the upper face of the 4th metal wiring layer 24 that is positioned at most upperstratum position.The pad of being processed by aluminium (Al) 61 is formed on the upper face of interlayer dielectric 45, and is used to set up and being electrically connected of peripheral circuit (not shown) etc.

In the interlayer dielectric 45 between the 4th metal line 34-5 of pad 61 and the 4th metal wiring layer 24 under pad 61; Be formed with another contact plunger 55; And this contact plunger 55 extends through interlayer dielectric 45, thereby pad 61 and the 4th metal line 34-5 are interconnected.Contact plunger 55 is for example formed by aluminium (Al).In addition, be formed with interlayer dielectric 46 with the mode that covers pad 61.

Position relative with the photodiode of black-level reference pixel portions 13 is formed with photomask.

Particularly; Some wirings 31 of formed a plurality of first metal lines 31 are disposed in black-level reference pixel portions 13 tops with the relation that is spaced apart at a predetermined distance from each other and according to multirow in first metal wiring layer 21 among each metal wiring layer 20, thereby form first photomask 71.

In addition; Some wirings 32 of formed a plurality of second metal lines 32 are disposed between first metal line 31 above the black-level reference pixel portions 13 and above these first metal lines 31 in second metal wiring layer 22 above first metal wiring layer 21, thereby form second photomask 72.

In other words, second photomask 72 arrangement that is formed the arrangement that makes second photomask 72 and first photomask 71 state of half period that staggers.

In addition; Some wirings 33 of the 3rd metal wiring layer 23 formed a plurality of the 3rd metal lines 33 that are arranged in second metal wiring layer, 22 tops are being arranged with the relation that is spaced apart at a predetermined distance from each other and according to multirow on perpendicular to the direction of second photomask 72 that is formed by second metal line 32, thus above black-level reference pixel portions 13 formation the 3rd photomask 73.

In addition; Some wirings 34 of formed a plurality of the 4th metal lines 34 are disposed between the 3rd metal line 33 above the black-level reference pixel portions 13 and above these the 3rd metal lines 33 in the 4th metal wiring layer 24 above the 3rd metal wiring layer 23, thereby form the 4th photomask 74.

In other words, the 4th photomask 74 arrangement that is formed the arrangement that makes the 4th photomask 74 and the 3rd photomask 73 state of half period that staggers.

Shown in Fig. 2 A and Fig. 2 B, first photomask 71 can lines form with the minimum wiring width of interval L/S=100nm/100nm and the pattern of minimum interval according to for example having.In addition, second photomask 72 is arranged to and the stagger relation of half period of first photomask 71, therefore sees from this pattern top, when promptly overlooking, can not find the gap.

In addition; The 3rd photomask 73 can lines form with the minimum wiring width of interval L/S=100nm/100nm and the pattern of minimum interval according to for example having; And see that from this pattern top when promptly overlooking, the 3rd photomask 73 is disposed on the direction perpendicular to second photomask 72.In addition, the 4th photomask 74 is arranged to and the stagger relation of half period of the 3rd photomask 73, therefore sees from this pattern top, when promptly overlooking, can not find the gap.

When in the above described manner according to each other range upon range of relation configuration first～the 4th photomask 71～74; Even each layer wiring membrane thickness in the intermediate layer in this generation of 65nm LSI for example is under the situation of 170nm, the 340nm that Miltilayer wiring structure also capable of using is realized being essentially two-layer (=170nm * 2 layer) wiring membrane thickness.Can realize the thick-layer structure of photomask by this way, and can realize letting the film thickness of light shield layer greater than the wiring membrane thickness 225nm in the intermediate layer in this generation of 90nm LSI.

In addition; Because light shield layer can be formed by the wiring with the live width that meets design rule; And in this design rule, can suppress the depression or the erosion that cause owing to cmp; Therefore, compare, can reduce the depression that copper (Cu) wiring copper (Cu) peculiar, the central part because overmastication is connected up causes with the photomask that deviates from this design rule in the prior art with tens μ m～100 μ m live widths.

Though in the explanation of above-mentioned first embodiment, the metal wiring layer 20 that forms four layers has been described as an example, yet the number of plies of metal wiring layer 20 also can be more than four layers.In this case, can use continuous four layers of metal wiring layer 20 to form first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74.

In addition,, can form the two-layer photomask similar with second photomask 72, and make this two-layer photomask perpendicular to the 3rd photomask 73 and the 4th photomask 74 and extend with first photomask 71 when the number of plies of metal wiring layer 20 during greater than six layers.In addition, when the number of plies of metal wiring layer 20 during, can form above above-mentioned first～the 4th photomask 71～74 of two covers greater than eight layers.In other words, can form photomask according to the number of plies of metal wiring layer.

First solid camera head 1 of first embodiment of the invention comprises first photomask 71 and second photomask 72; In first photomask 71, some wirings 31 of formed a plurality of first metal lines 31 are disposed in black-level reference pixel portions 13 tops with the relation that is spaced apart at a predetermined distance from each other and according to multirow in first metal wiring layer 21 among each metal wiring layer 20; In second photomask 72, some wirings 32 of formed a plurality of second metal lines 32 are disposed between first metal line 31 above the black-level reference pixel portions 13 and above these first metal lines 31 in second metal wiring layer 22 above first metal wiring layer 21.Therefore, when overlooking, first photomask 71 and second photomask 72 are covered with black-level reference pixel portions 13.In addition, first solid camera head 1 has the 3rd photomask 73 and the 4th photomask 74 that is positioned at black-level reference pixel portions 13 tops; In the 3rd photomask 73, some wirings 33 that are arranged in the 3rd metal wiring layer 23 formed a plurality of the 3rd metal lines 33 of second metal wiring layer, 22 tops are being arranged according to multirow and with the relation that is spaced apart at a predetermined distance from each other on perpendicular to the direction of second photomask 72 that is formed by second metal line 32; In the 4th photomask 74, some wirings 34 of formed a plurality of the 4th metal lines 34 are disposed between the 3rd metal line 33 above the black-level reference pixel portions 13 and above these the 3rd metal lines 33 in the 4th metal wiring layer 24 above the 3rd metal wiring layer 23.Therefore, when overlooking, the 3rd photomask 73 and the 4th photomask 74 are covered with black-level reference pixel portions 13.

In addition; Because the 3rd photomask 73 and the 4th photomask 74 are being arranged on the direction perpendicular to first photomask 71 and second photomask 72; Thereby improved the shading performance for oblique incidence light, and photomask is formed by two metal wiring layers basically.Therefore, compare, can increase the integral membrane thickness of photomask with the photomask that forms by single metal wiring layer in the prior art.

Therefore, even wiring is formed less thickness, also can be kept or improved by being in the shading performance of the film formed photomask of one deck with wiring along with becoming more meticulous.Therefore, advantage is that photomask has suitable following each shading performance for LSI.

In addition, because first photomask 71 comprises that therefore first photomask 71 can be formed and have the live width that can not cave in or corrode with relation that is spaced apart at a predetermined distance from each other and the wiring of arranging according to multirow.Therefore, even when using cmp to form photomask, the film thickness that also can guarantee photomask is the film thickness of design load.Therefore, can prevent the deterioration of shading performance.Also have the live width that can not cave in or corrode, so can obtain the effect similar with first photomask 71 because second photomask 72, the 3rd photomask 73 and the 4th photomask 74 can be formed.

Like this, because each photomask can guarantee the film thickness be scheduled to, therefore can prevent the deterioration of shading performance.

Therefore, through comprising such four layers of photomask of first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74, can stop light to enter into the photodiode area of black-level reference pixel portions 13.

First solid camera head of second embodiment of the invention is described with reference to Fig. 3 and Fig. 4 below.Fig. 3 shows the cmos image sensor as the example of solid camera head particularly.

At first with reference to Fig. 3; The first shown solid camera head 2 comprises: the light-receiving pixel portions 12 and the black-level reference pixel portions 13 that on semiconductor substrate 11, form by photodiode, and the multilayer wiring portion 14 that on the upper face of light-receiving pixel portions 12 and black-level reference pixel portions 13, forms.

In addition, interlayer dielectric 45 is formed and covers that metal wiring layer 20 promptly on the upper face of the 4th metal wiring layer 24 that is positioned at most upperstratum position.The pad 61 that is formed by aluminium (Al) is formed on the upper face of interlayer dielectric 45, and is used to set up and being electrically connected of peripheral circuit (not shown) etc.

In addition; Some wirings 32 of formed a plurality of second metal lines 32 are disposed in above first metal line 31 above the black-level reference pixel portions 13 and between these first metal lines 31 in second metal wiring layer 22 above first metal wiring layer 21, thereby form second photomask 72.Second photomask 72 is formed at the top of part first photomask 71 and forms overlapping relation with this part first photomask 71.For example, when overlooking, the edge of second photomask 72 and first photomask 71 forms overlapping relation.

In addition; Some wirings 34 of formed a plurality of the 4th metal lines 34 are disposed between the 3rd metal line 33 above the black-level reference pixel portions 13 and above these the 3rd metal lines 33 in the 4th metal wiring layer 24 above the 3rd metal wiring layer 23, thereby form the 4th photomask 74.So the 4th photomask 74 is formed at the top of part the 3rd photomask 73 and forms overlapping relation with this part the 3rd photomask 73.For example, when overlooking, the edge of the 4th photomask 74 and the 3rd photomask 73 forms overlapping relation.

Shown in Fig. 4 A and Fig. 4 B, first photomask 71 can form with pattern at interval with the wiring width of L/S=3000nm/350nm at interval according to having the for example lines that can suppress to cave in.In addition, second photomask 72 is arranged to and the stagger relation of half period of first photomask 71, therefore sees from this pattern top, when promptly overlooking, can not find the gap.

In addition; The 3rd photomask 73 can form with pattern at interval with the wiring width of L/S=3000nm/350nm at interval according to having lines for example; And see that from this pattern top when promptly overlooking, the 3rd photomask 73 is disposed on the direction perpendicular to second photomask 72.In addition, the 4th photomask 74 is arranged to and the stagger relation of half period of the 3rd photomask 73, therefore sees from this pattern top, when promptly overlooking, can not find the gap.

The example of explanation is an example above, and decides according to the cmp condition, can further increase the width of photomask.For example, the live width with first～the 4th photomask 71～74 preferably is made as less than 5 μ m.More preferably, said live width is made as less than 3 μ m.

In addition, said interval is not limited to 350nm, can be through considering that for example the machinability at interval is confirmed width at interval.For example, can said interval be located in the scope of 200～400nm.

When in the above described manner according to each other range upon range of relation configuration first～the 4th photomask 71～74; Even each layer wiring membrane thickness in the intermediate layer in this generation of 65nm LSI for example is under the situation of 170nm; The 340nm that Miltilayer wiring structure also capable of using is realized being essentially two-layer (=170nm * 2 layer) wiring membrane thickness, and be implemented in the 510nm that corresponds essentially to the threeply degree than the thickness portion place (=170nm * 3 layer) wiring membrane thickness.Can realize the thick-layer structure of photomask by this way, and can realize letting the film thickness of light shield layer greater than the wiring membrane thickness 225nm in the intermediate layer in this generation of 90nm LSI.

Though in aforesaid second embodiment; The line image that first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74 have equal live width; Yet; For example, if used the width line image bigger than the interval width between the photomask in the lower floor, the live width of photomask can be different so.For example, when using a certain photomask,, can form the width line image bigger than the width of other layer photomask in order to reduce wiring impedance as wiring.

Though in the explanation of above-mentioned second embodiment, the metal wiring layer 20 that forms four layers has been described as an example, yet the number of plies of metal wiring layer 20 also can be more than four layers.In this case, can use continuous four layers of metal wiring layer 20 to form first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74.

In addition,, can form and first photomask 71 and the similar two-layer photomask of second photomask 72, and make this two-layer photomask perpendicular to the 3rd photomask 73 and the 4th photomask 74 and extend when the number of plies of metal wiring layer 20 during greater than six layers.In addition, when the number of plies of metal wiring layer 20 during, can form above above-mentioned first～the 4th photomask 71～74 of two covers greater than eight layers.In other words, can form photomask according to the number of plies of metal wiring layer.

First solid camera head 2 of second embodiment of the invention comprises first photomask 71 and second photomask 72; In first photomask 71, some wirings 31 of formed a plurality of first metal lines 31 are disposed in black-level reference pixel portions 13 tops with the relation that is spaced apart at a predetermined distance from each other and according to multirow in first metal wiring layer 21 among each metal wiring layer 20; In second photomask 72, some wirings 32 of formed a plurality of second metal lines 32 are disposed between first metal line 31 above the black-level reference pixel portions 13 and above these first metal lines 31 in second metal wiring layer 22 above first metal wiring layer 21.Therefore, when overlooking, first photomask 71 and second photomask 72 are covered with black-level reference pixel portions 13.In addition, first solid camera head 2 has the 3rd photomask 73 and the 4th photomask 74 that is positioned at black-level reference pixel portions 13 tops; In the 3rd photomask 73, some wirings 33 that are arranged in the 3rd metal wiring layer 23 formed a plurality of the 3rd metal lines 33 of second metal wiring layer, 22 tops are being arranged according to multirow and with the relation that is spaced apart at a predetermined distance from each other on perpendicular to the direction of second photomask 72 that is formed by second metal line 32; In the 4th photomask 74, some wirings 34 of formed a plurality of the 4th metal lines 34 are disposed between the 3rd metal line 33 above the black-level reference pixel portions 13 and above these the 3rd metal lines 33 in the 4th metal wiring layer 24 above the 3rd metal wiring layer 23.Therefore, when overlooking, the 3rd photomask 73 and the 4th photomask 74 are covered with black-level reference pixel portions 13.

In addition, because the 3rd photomask 73 and the 4th photomask 74 be disposed on the direction perpendicular to first photomask 71 and second photomask 72, thereby improved the shading performance for oblique incidence light, and photomask is formed by two metal wiring layers basically.Therefore, compare, can increase the integral membrane thickness of photomask with the photomask that forms by single metal wiring layer in the prior art.

In addition; As shown in Figure 5; Because second photomask 72 is formed at the top of part first photomask 71 and forms overlapping relation with this part first photomask 71, therefore not only can stop vertical incidence light Lv reliably, and can stop oblique incidence light Ls reliably.

On the other hand; As shown in Figure 6; When second photomask 72 is not when being formed at the top of part first photomask 71 and forming overlapping relations with this part first photomask 71, although second photomask 72 can stop vertical incidence light Lv reliably, a part of oblique incidence light Ls may pass between the photomask; For example between first photomask 71 and second photomask 72, pass, thereby make the shading performance degradation.

Therefore, when forming second photomask 72,, also can be kept or improved by being in the shading performance of the film formed photomask of one deck with wiring even wiring is formed film in order to become more meticulous with above-mentioned overlapping relation.Therefore, advantage is that photomask has suitable following each shading performance for LSI.

Therefore, because each photomask can guarantee the film thickness be scheduled to, therefore can prevent the deterioration of shading performance.

Second solid camera head of third embodiment of the invention is described with reference to Fig. 7 and Fig. 8 below.Fig. 7 shows the cmos image sensor as the example of solid camera head particularly.

At first with reference to Fig. 7; The second shown solid camera head 3 comprises: the light-receiving pixel portions 12 and the black-level reference pixel portions 13 that on semiconductor substrate 11, form by photodiode, and the multilayer wiring portion 14 that on the upper face of light-receiving pixel portions 12 and black-level reference pixel portions 13, forms.

These metal wiring layers 20 form by for example copper (Cu), aluminium (Al) or the tungsten metal lines such as (W) as the semiconductor device wiring material.In addition, interlayer dielectric 40 is by for example silica (SiO ₂) film formation.Interlayer dielectric 40 can also can be formed by the inorganic insulating membrane with light transmission, organic insulating film or similar film by forming by any material that metal line is insulated from each other.

In addition; Some wirings 32 of formed a plurality of second metal lines 32 are disposed in above first metal line 31 above the black-level reference pixel portions 13 and between these first metal lines 31 in second metal wiring layer 22 above first metal wiring layer 21, thereby form second photomask 72.

In addition, above black-level reference pixel portions 13, be provided with the first complete photomask 71 and second photomask 72 according to multilayer.

For example; Some wirings 33 of formed a plurality of the 3rd metal lines 33 are disposed between second metal line 32 above the black-level reference pixel portions 13 and above these second metal lines 32 in the 3rd metal wiring layer 23 above second metal wiring layer 22, thereby form the 3rd photomask 73.

For example, the arrangement of the 4th photomask 74 is formed with respect to the arrangement of the 3rd photomask 73 half period that staggers.

In addition, the arrangement of the 3rd photomask 73 is formed with respect to the arrangement of second photomask 72 half period that staggers.

Shown in Fig. 8 A and Fig. 8 B, first photomask 71 can lines form with the minimum wiring width of interval L/S=100nm/100nm and the pattern of minimum interval according to for example having.In addition, second photomask 72 is arranged to and the stagger relation of half period of first photomask 71, therefore sees from this pattern top, when promptly overlooking, can not find the gap.

In addition; The 3rd photomask 73 can lines form with the minimum wiring width of interval L/S=100nm/100nm and the pattern of minimum interval according to for example having; And see that from this pattern top when promptly overlooking, the 3rd photomask 73 is disposed on the direction that is parallel to second photomask 72.In addition, the 4th photomask 74 is arranged to and the stagger relation of half period of the 3rd photomask 73, therefore sees from this pattern top, when promptly overlooking, can not find the gap.

Though in the explanation of above-mentioned the 3rd embodiment, the metal wiring layer 20 that forms four layers has been described as an example, yet the number of plies of metal wiring layer 20 also can be more than four layers.In this case, can use continuous four layers in the metal wiring layer 20 to form first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74.

In addition; When the number of plies more than metal wiring layer 20 is formed n (n is the natural number more than or equal to 6) layer and first photomask 71 and second photomask 72 form a cover,, then can form the n/2 cover if n is an even number; And when n is odd number, then can form (n-1)/2 cover.In other words, can form photomask according to the number of plies of metal wiring layer.

In second solid camera head 3 of third embodiment of the invention; When forming a plurality of first metal line 31 in first metal wiring layer 21 among each metal wiring layer 20; Some wirings 31 of a plurality of first metal lines 31 are disposed in black-level reference pixel portions 13 tops with the relation that is spaced apart at a predetermined distance from each other and according to multirow, thereby form first photomask 71.In addition; When second metal wiring layer 22 above being arranged in first metal wiring layer 21 forms a plurality of second metal line 32; Some wirings 32 of a plurality of second metal lines 32 are disposed between first metal line 31 above the black-level reference pixel portions 13 and above these first metal lines 31, thereby form second photomask 72.Therefore, when overlooking, first photomask 71 and second photomask 72 are covered with black-level reference pixel portions 13.

In addition, owing to above black-level reference pixel portions 13, be provided with many cover first photomasks 71 and second photomask 72, therefore can improve shading performance for oblique incidence light.When being provided with at least two cover first photomasks 71 and second photomasks 72, photomask is formed by two metal wiring layers basically.

Therefore, compare, can form the photomask that integral membrane thickness increases with the photomask that forms by single metal wiring layer in the prior art.Certainly, under the situation that is provided with first photomask 71 and second photomask 72 more than three covers, the shading performance can be enhanced corresponding to tricks.

The advantage that provides is, even each metal wiring layer 20 is formed the film of less thickness, these metal wiring layers 20 also can form to have and be fit to following each photomask for the shading performance of LSI.

In addition, second solid camera head of above-mentioned the 3rd embodiment is effective for for example following situation: multilayer wiring must be disposed on the same direction of black-level reference pixel portions 13 tops.

Second solid camera head of fourth embodiment of the invention is described with reference to Fig. 9 and Figure 10 below.Fig. 9 shows the cmos image sensor as the example of solid camera head particularly.

At first with reference to Fig. 9; The second shown solid camera head 4 comprises: the light-receiving pixel portions 12 and the black-level reference pixel portions 13 that on semiconductor substrate 11, form by photodiode, and the multilayer wiring portion 14 that on the upper face of light-receiving pixel portions 12 and black-level reference pixel portions 13, forms.

In addition; Some wirings 33 of formed a plurality of the 3rd metal lines 33 are disposed between second metal line 32 above the black-level reference pixel portions 13 and above these second metal lines 32 in the 3rd metal wiring layer 23 above second metal wiring layer 22, thereby form the 3rd photomask 73.So the 3rd photomask 73 is formed at the top of part second photomask 72 and forms overlapping relation with this part second photomask 72.For example, when overlooking, the edge of the 3rd photomask 73 and second photomask 72 forms overlapping relation.

In other words, the 3rd photomask 73 arrangement that is formed the arrangement that makes the 3rd photomask 73 and second photomask 72 state of half period that staggers.

Shown in Figure 10 A and Figure 10 B, first photomask 71 can form with pattern at interval with the wiring width of L/S=3000nm/350nm at interval according to having the for example lines that can suppress to cave in.In addition, second photomask 72 is arranged to and the stagger relation of half period of first photomask 71, therefore sees from this pattern top, when promptly overlooking, between first photomask 71 and second photomask 72, can not find the gap.

In addition; The 3rd photomask 73 can form with pattern at interval with the wiring width of L/S=3000nm/350nm at interval according to having lines for example; And the 3rd photomask 73 is arranged to and the stagger relation of half period of second photomask 72; Therefore see from this pattern top, when promptly overlooking, between second photomask 72 and the 3rd photomask 73, can not find the gap.In addition; The 4th photomask 74 can form with pattern at interval according to the wiring width of for example lines and interval L/S=3000nm/350nm; And be arranged to and the stagger relation of half period of the arrangement of the 3rd photomask 73; Therefore see from this pattern top, when promptly overlooking, between the 3rd photomask 73 and the 4th photomask 74, can not find the gap.

In addition; Because light shield layer can be formed by the wiring with the live width that meets design rule; In this design rule, can suppress the depression or the erosion that cause owing to cmp; Therefore, compare, can reduce the depression that copper (Cu) wiring copper (Cu) peculiar, the central part because overmastication is connected up causes with the photomask that deviates from this design rule in the prior art with tens μ m～100 μ m live widths.

Though in aforesaid the 4th embodiment; The line image that first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74 have equal live width; Yet; For example, if used the width line image bigger than the interval width between the photomask in the lower floor, the live width of photomask can be different so.For example, when using a certain photomask,, can form the width line image bigger than the width of other layer photomask in order to reduce wiring impedance as wiring.

Though in the explanation of above-mentioned the 4th embodiment, the metal wiring layer 20 that forms four layers has been described as an example, yet the number of plies of metal wiring layer 20 also can be more than four layers.In this case, can use continuous four layers in the metal wiring layer 20 to form first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74.

In addition; When the number of plies more than metal wiring layer 20 is formed n (n is the natural number more than or equal to 6) layer and first photomask 71 and second photomask 72 form a cover,, then can form the n/2 cover if n is an even number; And when n is odd number, can form (n-1)/2 cover.In other words, can form photomask according to the number of plies of metal wiring layer.

In second solid camera head 4 of fourth embodiment of the invention; When forming a plurality of first metal line 31 in first metal wiring layer 21 among each metal wiring layer 20; Some wirings 31 of a plurality of first metal lines 31 are disposed in black-level reference pixel portions 13 tops with the relation that is spaced apart at a predetermined distance from each other and according to multirow, thereby form first photomask 71.In addition; When second metal wiring layer 22 above being arranged in first metal wiring layer 21 forms a plurality of second metal line 32; Some wirings 32 of a plurality of second metal lines 32 are disposed between first metal line 31 above the black-level reference pixel portions 13 and above these first metal lines 31, thereby form second photomask 72.Therefore, when overlooking, first photomask 71 and second photomask 72 are covered with black-level reference pixel portions 13.

In addition, owing to above black-level reference pixel portions 13, be provided with many cover first photomasks 71 and second photomask 72, therefore can improve shading performance for oblique incidence light.When being provided with at least two cover first photomasks 71 and second photomasks 72, photomask is formed by two metal wiring layers basically.Therefore, compare, can form the photomask that integral membrane thickness increases with the photomask that forms by a metal wiring layer in the prior art.Certainly, under the situation that is provided with first photomask 71 and second photomask 72 more than three covers, the shading performance can be enhanced corresponding to tricks.

Therefore, even each metal wiring layer 20 is formed the film of less thickness, these metal wiring layers 20 also can form to have and be fit to following each photomask for the shading performance of LSI.

In addition, because first photomask 71 comprises that therefore first photomask 71 can be formed and have the live width that can not cave in or corrode with relation that is spaced apart at a predetermined distance from each other and the wiring of arranging according to multirow.Similarly, also because second photomask 72 comprises is disposed between first photomask 71 and the wiring above these first photomasks 71, and these wirings are formed with the relation that is spaced apart at a predetermined distance from each other and according to multirow.Therefore, similar with first photomask 71, second photomask 72 can be formed has the live width that can not cave in or corrode.

In addition, as shown in Figure 5, because second photomask 72 is formed at part first photomask, 71 tops and forms overlapping relation with this part first photomask 71, therefore second photomask 72 can stop oblique incidence light Ls reliably.In addition, in this respect, the 3rd photomask 73 and the 4th photomask 74 and second photomask 72 are similar.

Therefore, when forming second photomask 72,, also can be kept or improved by being in the shading performance of the film formed photomask of one deck with wiring even wiring is formed the film that becomes more meticulous with above-mentioned overlapping relation.Therefore, advantage is that this photomask has suitable following each shading performance for LSI.

In addition, because first photomask 71 comprises that therefore first photomask 71 can be formed and have the live width that can not cave in or corrode with relation that is spaced apart at a predetermined distance from each other and the wiring of arranging according to multirow.Like this, even when using cmp to form photomask, the film thickness that also can guarantee photomask is the film thickness of design load.Therefore, can prevent the deterioration of shading performance.Also have the live width that can not cave in or corrode, so can obtain the effect similar with first photomask 71 because second photomask 72, the 3rd photomask 73 and the 4th photomask 74 can be formed.

The material of the metal line that in first～the 4th embodiment, uses and the material that is used to make the interconnective contact plunger of metal line can be any metal materials that is generally used for metal line such as copper, aluminium, tungsten, aluminium alloy and copper alloy etc.

In addition; Material as the barrier metal that is used for metal line (barrier metal) for example can be: titanium, tantalum, tungsten; Ruthenium; The nitride of above-mentioned metal contains the alloy of above-mentioned metal as main component, and the stacked film of from the alloy of the nitride of above-mentioned metal, above-mentioned metal and above-mentioned metal, selecting.

In first～the 4th embodiment, at least one photomask in first～the 4th photomask 71～74 also can be used for being electrically connected.In other words, photomask also can be used as wiring.

In this case, photomask not only can be used as common wiring, also can be used as shunting wiring (shunt wiring line).For example, in the time of when be used in the application that electric current flows with high current density as power-supply wiring in, the photomask that is used as the shunting wiring for suppressing because the wiring impedance increase that wiring thickness reduces to cause is effective.Especially, photomask is effective for the power consumption that reduces in the large-area solid camera head that unavoidably can use long wiring distance.

In addition, form to overlap each other at another light shield layer of the light shield layer on upper strata and lower floor and concern in this structure that can be connected with each other through the photomask of contact plunger with different layers, therefore, these photomasks are as a wiring.

For example; Shown in figure 11; The 3rd photomask 73 (73-1) that can be respectively will be formed by the 3rd metal line 33 of the 3rd metal wiring layer 23 through contact plunger 52 and 53 interconnects with the 4th photomask 74 (74-1) and another the 4th photomask 74 (74-2) that the 4th metal line 34 by the 4th metal wiring layer 24 forms, thereby these three photomasks are used as a wiring.

Perhaps; The 3rd photomask 73 (73-2) that also can be respectively will be formed by the 3rd metal line 33 of the 3rd metal wiring layer 23 through contact plunger 54 and 55 and another the 3rd photomask 73 (73-3) interconnect with the 4th photomask 74 (74-3) that the 4th metal line 34 by the 4th metal wiring layer 24 forms, thereby these three photomasks are used as a wiring.

Though in above-mentioned explanation, three photomasks are used as a wiring, yet the number of plies of such photomask can be one deck or more than one deck.Only necessary is to adopt the light shield layer on upper strata and another light shield layer of lower floor are formed the structure of overlapping each other and concerning.

By this way, can form the wiring more than two in the photomask group 70 by photomask.

At least one photomask in first～the 4th photomask 71～74 also is used as the wiring of electrical connection, and this wiring for example is a power line.As an example, Figure 12 shows the circuit diagram of cmos image sensor.

Shown in figure 12; Comprise pixel portions 210 and as the logic section 220 of the peripheral circuit of pixel portions 210, a plurality of pixels 211 in the pixel portions 210 include the photo-electric conversion element that is arranged in the matrix separately two-dimentionally as the cmos image sensor 201 of solid camera head.Logic section 220 comprises and is used for drive circuit 221, pixel vertical scanning circuit 223, timing generator circuit 225 and the horizontal scanning circuit 227 of drive control signal line independently of one another.

For the arranged of pixel 211, be furnished with output signal line 241 respectively listing of pixel 211, and on each row of pixel 211, be furnished with control signal wire.For example, said control signal wire can comprise transmission control line 242, control line 243 and selection control line 244 reset.In addition, reset line 245 is used for supplying with resetting voltage to each pixel 211.

The example of the internal structure of pixel 211 has been shown among this figure.Unit pixel in this examples of circuits is an image element circuit; This image element circuit for example comprises in light receiver 231 photodiode as photo-electric conversion element; Also comprise four transistors, these four transistors for example comprise transmission transistor 232, reset transistor 233, amplifier transistor 234 and select transistor 235.Here, for transmission transistor 232, reset transistor 233, amplifier transistor 234 and selection transistor 235, used for example N-channel MOS (Metal-oxide semiconductor, metal-oxide semiconductor (MOS)) transistor.

Transmission transistor 232 is connected between the cathode electrode and the unsteady diffusion part 236 as the charge voltage converter section of photodiode of light receiver 231.Transmission transistor 232 transfers to the diffusion part 236 that floats to the signal charge (being electronics) that in light receiver 231, is also gathered through opto-electronic conversion here.

Reset transistor 233 links to each other with reset line 245 at its drain electrode place, and links to each other with unsteady diffusion part 236 at its source electrode place.Signal charge is transferred to the diffusion part 236 that floats from light receiver 231 before, reset pulse is offered the gate electrode of reset transistor 233, so will the float current potential of diffusion part 236 of reset transistor 233 resets to resetting voltage.

Amplifier transistor 234 links to each other with unsteady diffusion part 236 at its gate electrode place, and links to each other with pixel power supply Vdd at its drain electrode place.Amplifier transistor 234 output resets the current potential of later unsteady diffusion part 236 with as reset level by reset transistor 233, and output by the current potential of the later unsteady diffusion part 236 of transmission transistor 232 transmission signals electric charges with as signal level.

Select transistor 235 for example to link to each other, and link to each other with output signal line 241 at its source electrode place at the source electrode of its drain electrode place with amplifier transistor 234.So, when when the grid voltage of selecting transistor 235 applies strobe pulse, select transistor 235 to get into (on) state of unlatching and make pixel 211 be in selected state, thereby a signal from amplifier transistor 234 outputs exports output signal line 241 to.It should be noted that and select transistor 235 to be configured to be connected between the drain electrode of pixel power supply Vdd and amplifier transistor 234 by other modes.

Drive circuit 221 is carried out the read operation of the signal of reading each pixel 211 on the row that is used to read out in pixel portions 210.

Pixel vertical scanning circuit 223 is formed by shift register or address decoder etc.Pixel vertical scanning circuit 223 suitably produces reset pulse, transmission pulse and strobe pulse etc.; So that according to capable of to read capable capable unit be each pixel 211 of scanning element portion 210 on the above-below direction in vertical direction about electronic shutter, and execution is used for being implemented in the capable electronic shutter operation that each pixel 211 is carried out signal removal of electronic shutter.So pixel vertical scanning circuit 223 is to carry out electronic shutter operation prior to the reading scan of drive circuit 221 to same delegation (electronic shutter is capable) corresponding to time interval of shutter speed.

Horizontal scanning circuit 227 is formed by shift register or address decoder etc., and the pixel column of scanning element portion 210 flatly successively.

Timing generator circuit 225 produces the clock signal and the control signal of the associative operation that is used for drive circuit 221 and pixel vertical scanning circuit 223 grades.

The structure of above-mentioned solid camera head (cmos image sensor) 201 is examples as solid camera head, and solid camera head 201 can have various structure.

In above-mentioned this cmos image sensor, for example can use the photomask conduct to link to each other with pixel power supply Vdd with some reset lines in a plurality of reset lines 245 that resetting voltage is provided or as the shunting wiring.In addition, transmission control line 242, the control line 243 that resets, some of wiring etc. selecting control line 244 and be used for connecting pixel portions 210 and logic section 220 also can be formed by photomask.

Because some wirings also can be used as photomask by this way, therefore can form and arrange wiring in the zone, and improve the degree of freedom in the distributing at the photomask that wiring is not set.Therefore, for example can obtaining, cellar area reduces and effects such as wiring impedance reduction.

Explanation is used as under the photomask situation film thickness that photomask is required with the metal line of multilayer wiring portion 14 in the preceding text illustrated example below.

Usually, for solid camera head,, then require black-level reference pixel portions 13 no matter how luminous density can both weaken light fully in order under the very high environment of luminous intensity, still contrast to be provided.

Although depend on the place, daylight has shown this high luminous intensity that under natural environment, is higher than about 100000lx (lux), thereby the situation that luminous intensity is impaired to below the 0.1lx is tested.

The shading performance embodies through reflection on the material surface and the absorption in the material.For example, T representes to arrive the transmissivity of the incident light on the material membrane, and R representes the reflection of incident light coefficient, and α representes the absorption of incident light coefficient, and d representes the film thickness of material membrane, obtains following expression (1):

T＝(1-R)exp(-αd)(1)

Here, work as T ₁Expression has film thickness d ₁The transmissivity of material membrane, T ₂Expression has film thickness d ₂The transmissivity of material membrane the time, the available following expression formula (2) that obtains from above-mentioned expression formula (1) is represented T ₁And T ₂:

log(T ₁/T ₂)＝-α(d ₁-d ₂)(2)

Wherein absorption coefficient can be represented through the following expression formula (3) of extinction coefficient K of having used:

α＝(4π/λ)K (3)

Therefore, the film thickness d of transmissivity T, material membrane and extinction coefficient K have the relation that is provided by following expression (4):

log(T ₁/T ₂)＝-(4π/λ)K(d ₁-d ₂)(4)

In brief, represent axis of ordinates with the logarithm of transmissivity T, when representing axis of abscissas with the film thickness d of photomask, what shown is, along with the increase of curves, extinction coefficient K increases, i.e. shading performance improves.

If represent above-mentioned axis of abscissas and obtain chart that then the shading characteristic of different materials film can easily compare each other with the logarithm of transmissivity T, all transmissivity will be represented with dB through the dB conversion of transmissivity.Provide dB conversion expression formula in this case below:

dB＝20logT (5)

Relation in visible-range between the transmissivity of copper and tantalum and the incident light wavelength is through showing in the actual measurement data of visible-range internal transmission factor to the dependence of wavelength among Figure 13.

In addition, in visible-range can be by under the wavelength of transmission, the relation between the transmissivity of copper and tantalum through among Figure 14 under can be by the wavelength of transmission transmissivity the actual measurement data of the dependence of film thickness is shown.

For luminous intensity is impaired to 0.1lx (lux) from 100000lx (lux), need be greater than the shading performance of-120dB.For example, when tantalum is made as 15nm as the barrier metal of copper wiring and with the film thickness of copper wiring, in order to realize-the shading performance of 120dB that needing the film thickness of copper wiring is 216nm.

Therefore, when the film thickness of every layer of copper wiring during less than 216nm, the embodiment of the invention of using the preceding text explanation is effective.

The manufacturing approach of first solid camera head of the present invention is described with reference to Fig. 1 below.

At first; Utilize the common manufacturing approach of solid camera head; On semiconductor substrate 11, form the light-receiving pixel portions 12 and black-level reference pixel portions 13 that form by photodiode, and on the upper face of light-receiving pixel portions 12 and black-level reference pixel portions 13, form multilayer wiring portion 14.

Multilayer wiring portion 14 forms through alternately form interlayer dielectric 40 and metal wiring layer 20 (for example, first metal wiring layer 21, second metal wiring layer 22, the 3rd metal wiring layer 23 and the 4th metal wiring layer 24) successively from semiconductor substrate 11 1 sides.In addition, when needs, form the contact plunger that extends through the interlayer dielectric 40 between metal wiring layer 20.For example; In the interlayer dielectric 40 (44) between another metal wiring layer 20 (the 3rd metal wiring layer 23) of a metal wiring layer 20 (the 4th metal wiring layer 24) and its lower floor; Form contact plunger 51, this contact plunger extends through interlayer dielectric 44 and the 4th metal line 34 of the 4th metal wiring layer 24 and the 3rd metal line 33 of the 3rd metal wiring layer 23 is interconnected.Certainly, although not shown, between the metal line of different metal wiring layer, also be formed with contact plunger.

These metal wiring layers 20 are formed by for example copper (Cu), aluminium (Al) or the tungsten metal lines such as (W) as the semiconductor device wiring material.In addition, interlayer dielectric 40 is for example by silica (SiO ₂) film formation.Interlayer dielectric 40 can also can use inorganic insulating membrane, organic insulating film or similar film with light transmission by forming by any material that metal line is insulated from each other.

When in first metal wiring layer 21, forming a plurality of first metal line 31, some wirings 31 of a plurality of first metal lines 31 are disposed in black-level reference pixel portions 13 tops with the relation that separates each other and according to multirow, thereby form first photomask 71.

In addition; When second metal wiring layer 22 above being arranged in first metal wiring layer 21 forms a plurality of second metal line 32; Some wirings 32 of a plurality of second metal lines 32 are arranged between first metal line 31 above the black-level reference pixel portions 13 and above these first metal lines 31, thereby form second photomask 72.

In addition; When the 3rd metal wiring layer 23 above being arranged in second metal wiring layer 22 forms a plurality of the 3rd metal line 33; Some wirings 33 of a plurality of the 3rd metal lines 33 are arranged in the relation that is spaced apart at a predetermined distance from each other and according to multirow on perpendicular to the direction of second photomask 72 above the black-level reference pixel portions 13, thereby form the 3rd photomask 73.

In addition; When the 4th metal wiring layer 24 above being arranged in the 3rd metal wiring layer 23 forms a plurality of the 4th metal line 34; Some wirings 34 of a plurality of the 4th metal lines 34 are arranged between the 3rd metal line 33 above the black-level reference pixel portions 13 and above these the 3rd metal lines 33, thereby form the 4th photomask 74.

After this; Interlayer dielectric 45 is formed on the upper face that covers that metal wiring layer 20 (the 4th metal wiring layer 24) that is positioned at most upperstratum position, and in interlayer dielectric 45, form the connecting hole of the 4th metal line 34-5 that extends to the 4th metal wiring layer 24.Then, in this connecting hole, for example form contact plunger 55, and this contact plunger 55 is connected with the 4th metal line 34-5 by aluminium (Al).In addition, contact plunger 55 is combined with the upper face of interlayer dielectric 45, and be formed for the pad 61 that is electrically connected with (not shown) such as peripheral circuits, this pad 61 is for example formed by aluminium (Al).Pad 61 can be formed at in one deck with contact plunger 55.

Though in above-mentioned explanation; The metal wiring layer 20 that forms four layers has been described as an example; Yet metal wiring layer 20 also can form more than four layers; And in this case, can use this to form first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74 more than continuous four layers in four layers the metal wiring layer 20.

In addition, when metal wiring layer 20 forms more than six layers, can form the two-layer photomask similar with second photomask 72, and make this two-layer photomask perpendicular to the 3rd photomask 73 and the 4th photomask 74 with first photomask 71.In addition, when metal wiring layer 20 forms more than eight layers, can form first～the 4th above photomask 71～74 of two covers.In other words, can form light shield layer according to the number of plies of metal wiring layer.

In addition, can form the structure of first solid camera head of above-mentioned second embodiment.In this case, should change the pattern width and the pattern distance of photomask.

The advantage of this manufacturing approach is; Even when wiring thickness is reduced along with becoming more meticulous; Also can be kept or improved by being in the shading performance of the film formed photomask of one deck, and can form to have and be fit to following each photomask for the shading performance of LSI with wiring.In addition, can improve shading performance for oblique incidence light.

In addition, even when utilizing cmp to form photomask,, therefore can prevent the deterioration of shading performance owing to can guarantee that the film thickness of photomask is the film thickness that is designed in order to form photomask with the live width that can not cave in or corrode.

The manufacturing approach of second solid camera head of the present invention is described with reference to Fig. 7 below.

Multilayer wiring portion 14 for example forms through alternately form interlayer dielectric 40 and metal wiring layer 20 (for example, first metal wiring layer 21, second metal wiring layer 22, the 3rd metal wiring layer 23 and the 4th metal wiring layer 24) successively from semiconductor substrate 11 1 sides.In addition, when needs, form the contact plunger that extends through the interlayer dielectric 40 between metal wiring layer 20.For example; In the interlayer dielectric 40 (44) between another metal wiring layer 20 (the 3rd metal wiring layer 23) of a metal wiring layer 20 (the 4th metal wiring layer 24) and its lower floor; Form contact plunger 51, this contact plunger extends through interlayer dielectric 44 and the 4th metal line 34 of the 4th metal wiring layer 24 and the 3rd metal line 33 of the 3rd metal wiring layer 23 is interconnected.Certainly, although not shown, between the metal line of other metal wiring layers, also be formed with contact plunger.

Metal wiring layer 20 is formed by for example copper (Cu), aluminium (Al) or the tungsten metal lines such as (W) as the semiconductor device wiring material.In addition, interlayer dielectric 40 is for example by silica (SiO ₂) film formation.Interlayer dielectric 40 can also can use inorganic insulating membrane, organic insulating film or similar film with light transmission by forming by any material that metal line is insulated from each other.

In addition; When the 3rd metal wiring layer 23 above being arranged in second metal wiring layer 22 forms a plurality of the 3rd metal line 33; Some wirings 33 of a plurality of the 3rd metal lines 33 are arranged between second metal line 32 above the black-level reference pixel portions 13 and above these second metal lines 32, thereby form the 3rd photomask 73.

Though in above-mentioned explanation; The metal wiring layer 20 that forms four layers has been described as an example; Yet metal wiring layer 20 also can form more than four layers; And in this case, can use more than continuous four layers in four layers the metal wiring layer 20 and form first photomask 71, second photomask 72, the 3rd photomask 73 and the 4th photomask 74.

In addition, can form the structure of second solid camera head 4 of above-mentioned the 4th embodiment.In this case, should change the pattern width and the pattern distance of photomask.

Need to prove; The topology example of first of above-mentioned explanation～the 4th embodiment only is an example; And when wiring width satisfies the design rule in each semiconductor device and each generation, can suitably revise these examples according to pattern form, wiring material and interlayer membrane material.

In addition, can solid camera head of the present invention be applied to the solid camera head that disposed in the various electronic equipments.For example, can solid camera head of the present invention be applied to: digital camera, DV, the digital camera head of portable terminal device, ATM (ATM), personal computer, and authentication apparatus such as the fingerprint of various safety means, train of thought or face, or the like.Solid camera head of the present invention is useful for slim (slim type) solid camera head especially.

Though above use actual conditions has been explained the preferred embodiments of the present invention; But this explanation is only from illustrative purpose; It will be appreciated by those skilled in the art that under the situation of spirit that does not deviate from accompanying claims or scope and can carry out various changes and variation.

Claims

1. solid camera head, it comprises:

Be formed at the light-receiving pixel portions on the semiconductor substrate;

Be formed at the black-level reference pixel portions on the said semiconductor substrate;

Be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises the insulating barrier that is formed on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier that these metal wiring layers comprise the first, second, third and the 4th metal wiring layer;

First photomask, it forms above being arranged in said black-level reference pixel portions through some first metal lines with formed a plurality of first metal lines in said first metal wiring layer according to the relation that is spaced apart at a predetermined distance from each other and according to multirow;

Second photomask; Its some second metal lines through formed a plurality of second metal lines in will said second metal wiring layer above said first metal wiring layer are arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines and form, and make and between said first photomask and said second photomask, can not find the gap when overlooking;

The 3rd photomask, some the 3rd metal lines of its formed a plurality of the 3rd metal lines of said the 3rd metal wiring layer through will being arranged in said second metal wiring layer top form above being arranged in said black-level reference pixel portions according to the relation that is spaced apart at a predetermined distance from each other and according to multirow on the direction of said second photomask when overlooking; And

The 4th photomask, its some the 4th metal lines through formed a plurality of the 4th metal lines in will said the 4th metal wiring layer above said the 3rd metal wiring layer are arranged between said the 3rd metal line above the said black-level reference pixel portions and above these the 3rd metal lines and form.

2. solid camera head according to claim 1, wherein said second photomask are formed at part said first photomask top and form overlapping relation with said first photomask of this part.

3. solid camera head according to claim 1, wherein said the 4th photomask are formed at part said the 3rd photomask top and form overlapping relation with said the 3rd photomask of this part.

4. solid camera head according to claim 1, at least one photomask in wherein said first～the 4th photomask is used as the wiring that is used to be electrically connected.

5. solid camera head, it comprises:

Be formed at the light-receiving pixel portions on the semiconductor substrate;

Be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises the insulating barrier that is formed on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier that these metal wiring layers comprise first and second metal wiring layers;

First photomask that forms by some first metal lines; More said first metal line is from formed a plurality of first metal lines in said first metal wiring layer, and is arranged in said black-level reference pixel portions top according to the relation that is spaced apart at a predetermined distance from each other and according to multirow; And

Second photomask that forms by some second metal lines; More said second metal line is from formed a plurality of second metal lines of said second metal wiring layer that are arranged in said first metal wiring layer top; And be disposed in as in the lower area; This zone is included in the zone between said first metal line above the said black-level reference pixel portions and above these first metal lines

Above said black-level reference pixel portions, be provided with complete said first and second photomasks according to multilayer.

6. solid camera head according to claim 5, wherein said first and second photomasks form the relation of overlapping each other on plane figure.

7. solid camera head according to claim 5, at least one photomask in wherein said first and second photomasks is used as the wiring that is used to be electrically connected.

8. method for manufacturing solid-state imaging device, said solid camera head comprises: be formed at the light-receiving pixel portions on the semiconductor substrate; Be formed at the black-level reference pixel portions on the said semiconductor substrate; And be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises the insulating barrier that is formed on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier; These metal wiring layers comprise the first, second, third and the 4th metal wiring layer, and said method for manufacturing solid-state imaging device comprises the steps:

When in said first metal wiring layer, forming a plurality of first metal line; Some first metal lines of a plurality of said first metal lines are arranged in said black-level reference pixel portions top according to the relation that is spaced apart at a predetermined distance from each other and according to multirow, thereby form first photomask;

When said second metal wiring layer above being arranged in said first metal wiring layer forms a plurality of second metal line; Some second metal lines of a plurality of said second metal lines are arranged between said first metal line above the said black-level reference pixel portions and above these first metal lines; Thereby form second photomask, make and between said first photomask and said second photomask, can not find the gap when overlooking;

When said the 3rd metal wiring layer above being arranged in said second metal wiring layer forms a plurality of the 3rd metal line; With some the 3rd metal lines of a plurality of said the 3rd metal lines when overlooking perpendicular to being arranged in above the said black-level reference pixel portions according to the relation that is spaced apart at a predetermined distance from each other and according to multirow on the direction of said second photomask, thereby form the 3rd photomask; And

When said the 4th metal wiring layer above being arranged in said the 3rd metal wiring layer forms a plurality of the 4th metal line; Some the 4th metal lines of a plurality of said the 4th metal lines are arranged between said the 3rd metal line above the said black-level reference pixel portions and above these the 3rd metal lines, thereby form the 4th photomask.

9. method for manufacturing solid-state imaging device, said solid camera head comprises: be formed at the light-receiving pixel portions on the semiconductor substrate; Be formed at the black-level reference pixel portions on the said semiconductor substrate; And be formed at the multilayer wiring portion on the said semiconductor substrate that comprises said light-receiving pixel portions and said black-level reference pixel portions; Said multilayer wiring portion comprises and is formed at the insulating barrier on the said semiconductor substrate and is formed at a plurality of metal wiring layers in the said insulating barrier; These metal wiring layers comprise first and second metal wiring layers, and said method for manufacturing solid-state imaging device comprises the steps:

When in said first metal wiring layer, forming a plurality of first metal line; Form first photomask by some first metal lines; More said first metal line is from a plurality of said first metal lines, and is arranged in said black-level reference pixel portions top according to the relation that is spaced apart at a predetermined distance from each other and according to multirow; And

When said second metal wiring layer above being arranged in said first metal wiring layer forms a plurality of second metal line; Form second photomask by some second metal lines; More said second metal line is from a plurality of said second metal lines; And be disposed between said first metal line above the said black-level reference pixel portions and above these first metal lines

Above said black-level reference pixel portions, complete said first and second photomasks are set times without number according to multilayer.