CN101487993A - Thick-film photo resist cleaning agent - Google Patents
Thick-film photo resist cleaning agent Download PDFInfo
- Publication number
- CN101487993A CN101487993A CNA2008100328326A CN200810032832A CN101487993A CN 101487993 A CN101487993 A CN 101487993A CN A2008100328326 A CNA2008100328326 A CN A2008100328326A CN 200810032832 A CN200810032832 A CN 200810032832A CN 101487993 A CN101487993 A CN 101487993A
- Authority
- CN
- China
- Prior art keywords
- clean
- amino
- out system
- mass percent
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000012459 cleaning agent Substances 0.000 title claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 title description 17
- 230000007797 corrosion Effects 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 35
- 150000001875 compounds Chemical class 0.000 claims abstract description 32
- 239000002253 acid Substances 0.000 claims abstract description 30
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 28
- 125000003710 aryl alkyl group Chemical group 0.000 claims abstract description 8
- -1 p-aminophenyl methyl Chemical group 0.000 claims description 28
- 241001597008 Nomeidae Species 0.000 claims description 20
- 238000000206 photolithography Methods 0.000 claims description 19
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 16
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 16
- QLSWIGRIBOSFMV-UHFFFAOYSA-N 1h-pyrrol-2-amine Chemical compound NC1=CC=CN1 QLSWIGRIBOSFMV-UHFFFAOYSA-N 0.000 claims description 11
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 claims description 9
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 8
- 229920002125 Sokalan® Polymers 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- 239000004584 polyacrylic acid Substances 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 239000006184 cosolvent Substances 0.000 claims description 7
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 6
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 6
- 150000003462 sulfoxides Chemical class 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 4
- DCEMCPAKSGRHCN-UHFFFAOYSA-N oxirane-2,3-dicarboxylic acid Chemical class OC(=O)C1OC1C(O)=O DCEMCPAKSGRHCN-UHFFFAOYSA-N 0.000 claims description 4
- 108010064470 polyaspartate Proteins 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 claims description 3
- GTKOKCQMHAGFSM-UHFFFAOYSA-N 1-methyltetrazol-5-amine Chemical compound CN1N=NN=C1N GTKOKCQMHAGFSM-UHFFFAOYSA-N 0.000 claims description 3
- WYTRYIUQUDTGSX-UHFFFAOYSA-N 1-phenylpropan-2-ol Chemical compound CC(O)CC1=CC=CC=C1 WYTRYIUQUDTGSX-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- HXMVNCMPQGPRLN-UHFFFAOYSA-N 2-hydroxyputrescine Chemical compound NCCC(O)CN HXMVNCMPQGPRLN-UHFFFAOYSA-N 0.000 claims description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 3
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 229940067107 phenylethyl alcohol Drugs 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920000193 polymethacrylate Polymers 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- LODDFDHPSIYCTK-UHFFFAOYSA-N (2,4,6-trimethylphenyl)methanol Chemical compound CC1=CC(C)=C(CO)C(C)=C1 LODDFDHPSIYCTK-UHFFFAOYSA-N 0.000 claims description 2
- JPBLHOJFMBOCAF-UHFFFAOYSA-N 1,3-benzoxazol-2-amine Chemical compound C1=CC=C2OC(N)=NC2=C1 JPBLHOJFMBOCAF-UHFFFAOYSA-N 0.000 claims description 2
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 2
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 claims description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 claims description 2
- WAPNOHKVXSQRPX-UHFFFAOYSA-N 1-phenylethanol Chemical compound CC(O)C1=CC=CC=C1 WAPNOHKVXSQRPX-UHFFFAOYSA-N 0.000 claims description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical class C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
- KEJFADGISRFLFO-UHFFFAOYSA-N 1H-indazol-6-amine Chemical compound NC1=CC=C2C=NNC2=C1 KEJFADGISRFLFO-UHFFFAOYSA-N 0.000 claims description 2
- JVVRJMXHNUAPHW-UHFFFAOYSA-N 1h-pyrazol-5-amine Chemical compound NC=1C=CNN=1 JVVRJMXHNUAPHW-UHFFFAOYSA-N 0.000 claims description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 2
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 claims description 2
- UHGULLIUJBCTEF-UHFFFAOYSA-N 2-aminobenzothiazole Chemical compound C1=CC=C2SC(N)=NC2=C1 UHGULLIUJBCTEF-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 claims description 2
- BDCFWIDZNLCTMF-UHFFFAOYSA-N 2-phenylpropan-2-ol Chemical compound CC(C)(O)C1=CC=CC=C1 BDCFWIDZNLCTMF-UHFFFAOYSA-N 0.000 claims description 2
- YOQINPWXHSJWDI-UHFFFAOYSA-N 2h-benzotriazole;2-[bis(2-hydroxyethyl)amino]ethanol Chemical compound C1=CC=CC2=NNN=C21.OCCN(CCO)CCO YOQINPWXHSJWDI-UHFFFAOYSA-N 0.000 claims description 2
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical class NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 claims description 2
- FDXBUMXUJRZANT-UHFFFAOYSA-N 6-phenylhexan-1-ol Chemical compound OCCCCCCC1=CC=CC=C1 FDXBUMXUJRZANT-UHFFFAOYSA-N 0.000 claims description 2
- LRSYZHFYNDZXMU-UHFFFAOYSA-N 9h-carbazol-3-amine Chemical compound C1=CC=C2C3=CC(N)=CC=C3NC2=C1 LRSYZHFYNDZXMU-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- OVGORFFCBUIFIA-UHFFFAOYSA-N Fenipentol Chemical compound CCCCC(O)C1=CC=CC=C1 OVGORFFCBUIFIA-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 2
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropanol Chemical compound CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 claims description 2
- 229920000805 Polyaspartic acid Polymers 0.000 claims description 2
- XMUZQOKACOLCSS-UHFFFAOYSA-N [2-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=CC=C1CO XMUZQOKACOLCSS-UHFFFAOYSA-N 0.000 claims description 2
- BWVAOONFBYYRHY-UHFFFAOYSA-N [4-(hydroxymethyl)phenyl]methanol Chemical compound OCC1=CC=C(CO)C=C1 BWVAOONFBYYRHY-UHFFFAOYSA-N 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims description 2
- RAMQAMYGQDRQKW-UHFFFAOYSA-N benzene;butan-1-ol Chemical class CCCCO.C1=CC=CC=C1 RAMQAMYGQDRQKW-UHFFFAOYSA-N 0.000 claims description 2
- 229960002887 deanol Drugs 0.000 claims description 2
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 239000012972 dimethylethanolamine Substances 0.000 claims description 2
- QILSFLSDHQAZET-UHFFFAOYSA-N diphenylmethanol Chemical compound C=1C=CC=CC=1C(O)C1=CC=CC=C1 QILSFLSDHQAZET-UHFFFAOYSA-N 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 2
- 229960005035 fenipentol Drugs 0.000 claims description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 229950009195 phenylpropanol Drugs 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 2
- 229960001124 trientine Drugs 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 229910052751 metal Inorganic materials 0.000 abstract description 19
- 239000002184 metal Substances 0.000 abstract description 19
- 239000010949 copper Substances 0.000 abstract description 11
- 238000004140 cleaning Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- BTRFEMXQDOWCBK-LNKPDPKZSA-N C(\C=C/C(=O)O)(=O)OCC.C(C(=C)C)(=O)O Chemical compound C(\C=C/C(=O)O)(=O)OCC.C(C(=C)C)(=O)O BTRFEMXQDOWCBK-LNKPDPKZSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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Abstract
The invention relates to a thick film photosensitive resist cleaning agent, comprising dimethyl sulfoxide, potassium hydroxide, alcamines compound, aryl alkyl alcohol and/or derivatives and polycarboxylic acid compounds thereof. The thick film photosensitive resist cleaning agent of the invention can effectively eliminate thick film photosensitive resist (photo resistance) with a thickness more than 100 mum on metal, metal alloy or dielectric medium parent metal and exerts little corrosion on metal such as aluminum and copper and the like and non-metal material like silicon dioxide and the like and little corrosion on wafer pattern and the parent metal, thus enjoying good application prospect in micro-electronics field such as semiconductor wafer cleaning.
Description
Technical field
The present invention relates to a kind of clean-out system in a kind of semiconductor fabrication process, be specifically related to a kind of thick film photolithography gluing cleaning agent.
Background technology
In common semiconductor fabrication process,, utilize wet method or dry etching to carry out figure transfer after the exposure by going up the mask that forms photoresist on surfaces such as silicon dioxide, Cu metals such as (copper) and low-k materials.The above thick film photolithography glue of 100 μ m is applied in the semiconductor wafer fabrication process more and more, thereby the clean-out system that is used for thick film photolithography glue becomes the important research direction of semiconductor wafer fabrication process day by day.Especially the above thick film negative photoresist of 100 μ m is applied in the semiconductor wafer fabrication process just gradually, and industrial most photoresist clean-out system all can not thoroughly be removed the negative photoresist with cross-linked structure after exposure and etching on the wafer at present.In addition, carry out in the chemical cleaning process of photoresist at semiconductor wafer, clean-out system (clean-out system that especially contains highly basic such as potassium hydroxide) regular meeting causes the corrosion of wafer figure and base material.Particularly utilizing chemical to remove in the process of etch residue, metal erosion is comparatively generally and very serious problem, often causes the remarkable reduction of wafer yield.
At present, the photoresist clean-out system mainly is made up of polar organic solvent, highly basic and/or water etc., by immersing semiconductor wafer in the clean-out system or utilizing clean-out system flushing semiconductor wafer, removes the photoresist on the semiconductor wafer.
JP1998239865 is with Tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO) (DMSO), 1,3 '-dimethyl-2-imidazolidinone (DMI) and water etc. are formed alkaline cleaner, wafer is immersed in this clean-out system the thick film photolithography glue more than the 20 μ m that remove under 50～100 ℃ on metal and the dielectric substrate.This clean-out system is slightly high to the corrosion of semiconductor wafer base material, and can not remove the photoresist of semiconductor wafer, cleansing power deficiency fully.
US5529887 forms alkaline cleaner by potassium hydroxide (KOH), alkylene glycol monoalkyl ether, soluble fluoride and water etc., wafer is immersed in this clean-out system, at the thick film photolithography glue of removing under 40～90 ℃ on metal and the dielectric substrate.This clean-out system is higher to the corrosion of semiconductor wafer base material.
US5962197 forms alkaline cleaner by potassium hydroxide, N-Methyl pyrrolidone (NMP), propylene glycol, water and surfactant etc., wafer is immersed in this clean-out system, at the thick film photolithography glue of removing under 105 ℃ on metal and the dielectric substrate.The cleaning temperature that this clean-out system is suitable for is higher, easily causes the corrosion of semiconductor die plate substrate.
US2004025976 and WO2004113486 form alkaline cleaner by quaternary ammonium hydroxide, water-miscible organic solvent, water, corrosion inhibiter and quality percentage composition less than potassium hydroxide of 1.0wt% etc., wafer is immersed in this clean-out system, at 20～85 ℃ of following submergence 1～40min, remove the thick film photolithography glue on metal and the dielectric substrate.This clean-out system is not good for the cleansing power of thick film photolithography glue especially thick film negative photoresist.
US5139607 forms alkaline cleaner by potassium hydroxide, tetrahydrofuran alcohol, ethylene glycol and water etc., and wafer is immersed in this clean-out system, being lower than submergence 1～40min under 90 ℃ the temperature, removes the thick film photolithography glue on metal and the dielectric substrate.This clean-out system is slightly high to the corrosion of semiconductor wafer base material, and can not remove the thick film photolithography glue of semiconductor wafer, cleansing power deficiency fully.
Summary of the invention
Problem to be solved by this invention is in order to overcome existing thick film photolithography gluing cleaning agent or cleansing power deficiency, perhaps to semiconductor wafer figure and the stronger defective of base material corrosivity, and provide a kind of strong and to semiconductor wafer base material and the lower photoresist clean-out system of figure corrosivity to thick film photolithography glue cleansing power.
Thick film photolithography gluing cleaning agent of the present invention contain dimethyl sulfoxide (DMSO), potassium hydroxide, alcamine compound, aryl alkyl pure and mild/or derivatives thereof and polycarboxylic acid compound.
Wherein, what the content of described dimethyl sulfoxide (DMSO) was preferable is mass percent 1～97%, and better is mass percent 30～90%.
Wherein, what the content of described potassium hydroxide was preferable is mass percent 0.1～5%, and better is mass percent 1～4%.
Wherein, described alcamine compound is preferable is selected from monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA), isopropanolamine, methyldiethanolamine, dimethylethanolamine and the AEEA (AEEA) one or more, one or more that better is in monoethanolamine, triethanolamine and the methyldiethanolamine.What the content of described alcamine compound was preferable is mass percent 1～50%, and better is mass percent 5～35%.
Wherein, described aryl alkyl is pure and mild/or derivatives thereof preferable be selected from phenmethylol, phenylethyl alcohol, benzhydrol, p-aminophenyl methyl alcohol, o-benzyl alcohol, methylbenzyl alcohol, dimethylphenylcarbinol, trimethylbenzene methanol, phthalyl alcohol, isophthalic alcohol, terephthalyl alcohol, methylbenzene ethanol, equal amido phenenyl alcohol, phenylpropanol, benzene butanols, fenipentol and the benzene hexanol one or more, one or more that better is in phenmethylol, phenylethyl alcohol, the pure and mild methylbenzene ethanol of O-phthalic.Described aryl alkyl is pure and mild/content of or derivatives thereof preferable be mass percent 1～50%, better is mass percent 5～30%.
Wherein, described polycarboxylic acid compound is preferable is selected from polyacrylic compounds and derivant thereof, poly-epoxy succinic acid compounds and derivant thereof, in poly-aspartate compounds and derivant thereof and poly compounds and the derivant thereof one or more, better polyacrylic acid and the multipolymer thereof of being selected from, polymethylacrylic acid and multipolymer thereof, polyacrylate and multipolymer thereof, polymethacrylate and multipolymer thereof, polyacrylic acid alcohol amine salt and multipolymer thereof, polymethylacrylic acid alcohol amine salt and multipolymer thereof, polyoxyethylene ether modified polyacrylic acid and derivant thereof, acid of polyoxyethylene ether modified polymethyl and derivant thereof, polyoxyethylene ether modified poly-epoxy succinic acid and derivant thereof, in polyoxyethylene ether modified polyaspartic acid and derivant thereof and polyoxyethylene ether modification poly and the derivant thereof one or more, best is polymethylacrylic acid and multipolymer thereof, polymethacrylate and multipolymer thereof, polyacrylic acid alcohol amine salt and multipolymer thereof, polymethylacrylic acid alcohol amine salt and multipolymer thereof, in polyoxyethylene ether modified polyacrylic acid and derivant thereof and acid of polyoxyethylene ether modified polymethyl and the derivant thereof one or more.What the molecular weight of described polycarboxylic acid compound was preferable is 500～100000, and better is 1000～50000.What the content of described polycarboxylic acid compound was preferable is mass percent 0.001～5%, and better is mass percent 0.05～2.5%.Described polycarboxylic acid compound shows extremely strong inhibiting effect to the corrosion of aluminium.
Thick film photolithography gluing cleaning agent of the present invention also can contain amino azole corrosion inhibiter, polarity organic cosolvent, surfactant, and in other corrosion inhibiter except that amino azole compound and polycarboxylic acid compound one or more.
What the content of described amino azole corrosion inhibiter was preferable is mass percent 0～5%, and better is mass percent 0.05～2.5%; What described polarity organic cosolvent content was preferable is mass percent 0～50%, and better is mass percent 5～30%; What described surface-active contents was preferable is mass percent 0～5%, and better is mass percent 0.05～3%; What described other corrosion inhibiter content except that amino azole compound and polycarboxylic acid compound was preferable is mass percent 0～5%, and better is mass percent 0.05～3%.
Wherein, described amino azole corrosion inhibiter is preferable is selected from 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 5-amino-tetrazole, 1-methyl-5-amino-tetrazole, 3-amino-5-sulfydryl-1,2, the 4-triazole, the 2-aminooimidazole, the amino benzimidazole of 2-, diamido benzo imidazoles, thiazolamine, the 2-aminobenzothiazole, 2-An Ji oxazole, the amino benzoxazole of 2-, the 3-amino-pyrazol, the 3-aminocarbazole, the 6-Aminoindazole, 2-amino-1,3, the 4-thiadiazoles, 2-amino-5-sulfydryl-1,3,4-thiadiazoles and 5-amino-1,2, one or more in the 3-thiadiazoles, better is 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 5-amino-tetrazole, 1-methyl-5-amino-tetrazole and 3-amino-5-sulfydryl-1,2, one or more in the 4-triazole.The amino azole compound shows very strong inhibiting effect to corrosions of metal such as copper, and can further suppress to corrode on the wafer figure generation of dim spot (spot corrosion).
Wherein, described polarity organic cosolvent is preferable is selected from sulfoxide, sulfone, imidazolidinone and the alkylene glycol monoalkyl ether one or more.What wherein, described sulfoxide was preferable is the diethyl sulfoxide and/or the first and second basic sulfoxides; Described sulfone is preferable is in methyl sulfone, ethyl sulfone and the sulfolane one or more, and better is sulfolane; Described imidazolidinone is a 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone and 1, and one or more in 3-diethyl-2-imidazolidinone, better is 1,3-dimethyl-2-imidazolidinone; Described alkylene glycol monoalkyl ether is preferable is selected from ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, the single ether of dipropylene glycol and the dipropylene glycol monobutyl ether one or more, and better is diethylene glycol monomethyl ether and/or dipropylene glycol monomethyl ether.
Wherein, described surfactant is preferable is selected from polyvinyl alcohol (PVA), polyvinylpyrrolidone, the polyoxyethylene ether one or more, one or more that better is in polyvinylpyrrolidone, the polyoxyethylene ether.What the molecular weight of described above-claimed cpd was preferable is 500～20000, and better is 1000～10000.
Wherein, described other corrosion inhibiter except that amino azole compound and polycarboxylic acid compound is preferable is selected from amine and/or the azole except that amino azole.Wherein, described amine inhibitor is preferable is in diethylenetriamine, triethylene tetramine, five ethene hexamines, polyethylene polyamine and the aminoethylpiperazine one or more, and better is polyethylene polyamine and/or aminoethylpiperazine; Described azole except that amino azole is one or more in benzotriazole, methyl benzotriazazole, benzotriazole triethanolamine salt, 1-phenyl-5-mercapto tetrazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole and the dimercaptothiodiazole, one or more that better is in benzotriazole, methyl benzotriazazole, 1-phenyl-5-mercapto tetrazole and the 2-mercaptobenzothiazole.
The simple evenly mixing of mentioned component can be made clean-out system of the present invention.Agents useful for same of the present invention and raw material are all commercially available to be got.Photoresist clean-out system among the present invention can be at 45～90 ℃ of photoresists that clean the above thickness of 100 μ m down.
Positive progressive effect of the present invention is: and the aryl alkyl that clean-out system of the present invention contains is pure and mild/and or derivatives thereof, alcamine compound, polycarboxylic acid compound can form layer protecting film at wafer figure and substrate surface, stop the attack to wafer figure and base material such as halogen atom, hydroxide ion, thereby reduce the corrosion of wafer figure and base material; Especially its polycarboxylic acid compound that contains shows extremely strong inhibiting effect to the corrosion of metallic aluminium.Additional preferred amino azole compound shows very strong inhibiting effect to corrosions of metal such as copper, and can further suppress to corrode on the wafer figure generation of dim spot (spot corrosion).Clean-out system of the present invention can effectively be removed the thick film photolithography glue (photoresistance) of the above thickness of 100 μ m on metal, metal alloy or the dielectric substrate, simultaneously nonmetallic materials such as metals such as aluminium and copper and silicon dioxide had very low corrosivity, make it show very low corrosivity, have a good application prospect at microelectronics such as semiconductor wafer cleanings to wafer figure and base material.
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～25
Table 1 has provided clean-out system embodiment 1～25 of the present invention, by prescription in the table the simple evenly mixing of each composition can be made each clean-out system.
Table 1 clean-out system embodiment 1～25 of the present invention
Effect embodiment
Table 2 has provided the prescription of contrast clean-out system 1 '～5 ' and clean-out system 1～12 of the present invention, presses listed component and content thereof in the table 1, simply mixes, and promptly makes each clean-out system.
The component and the content of table 2 contrast clean-out system 1 '～5 ' and clean-out system 1～12
| Clean-out system | Dimethyl sulfoxide (DMSO) | Potassium hydroxide | Monoethanolamine | Triethanolamine | Phenmethylol | Methacrylic acid-ethyl maleate multipolymer (molecular weight is 30000) | Polyoxyethylene ether modified polymethyl triethylenetetraminehexaacetic acid alcohol amine salt (molecular weight is 10000) | 3-amino-1,2,4-triazole | 5-amino-tetrazole | 1,3-dimethyl-2-imidazolidinone | Polyvinylpyrrolidone | Benzotriazole |
| 1’ | 59.00 | \ | 40.00 | \ | \ | \ | \ | \ | \ | \ | \ | 1.00 |
| 2’ | 94.00 | 0.50 | \ | \ | 5.00 | \ | \ | \ | \ | \ | \ | 0.50 |
| 3’ | 93.50 | 1.00 | 5.00 | \ | \ | \ | \ | \ | \ | \ | \ | 0.50 |
| 4’ | 89.00 | 1.00 | 5.00 | \ | 5.00 | \ | \ | \ | \ | \ | \ | \ |
| 5’ | 83.50 | 1.00 | 5.00 | \ | 10.00 | \ | \ | \ | \ | \ | \ | 0.50 |
| 1 | 88.90 | 1.00 | 5.00 | \ | 5.00 | 0.10 | \ | \ | \ | \ | \ | \ |
| 2 | 68.70 | 1.00 | 20.00 | \ | 10.00 | \ | 0.15 | \ | 0.15 | \ | \ | \ |
| 3 | 77.00 | 2.00 | 10.00 | \ | 10.00 | 0.20 | \ | 0.30 | \ | \ | \ | 0.50 |
| 4 | 58.20 | 2.00 | 15.00 | 1.00 | 8.00 | \ | 0.30 | 0.50 | \ | 15.00 | \ | \ |
| 5 | 68.10 | 2.00 | 20.00 | 1.00 | 8.00 | \ | 0.30 | \ | 0.50 | \ | 0.10 | \ |
| 6 | 77.50 | 1.00 | \ | 5.00 | 15.00 | \ | 0.50 | 0.50 | \ | \ | \ | 0.50 |
| 7 | 52.00 | 1.50 | 30.00 | \ | 15.00 | 1.00 | \ | 0.50 | \ | \ | \ | \ |
| 8 | 36.00 | 2.00 | 45.00 | \ | 15.00 | \ | 1.00 | \ | 1.00 | \ | \ | \ |
| 9 | 42.70 | 2.50 | 30.00 | \ | 8.00 | 0.30 | \ | 0.50 | 0.50 | 15.00 | \ | 0.50 |
| 10 | 51.20 | 3.00 | 35.00 | 1.00 | 8.00 | 0.50 | \ | 0.50 | 0.50 | \ | 0.30 | \ |
| 11 | 56.50 | 3.50 | 30.00 | \ | 8.00 | \ | 0.50 | \ | 1.00 | \ | \ | 0.50 |
| 12 | 41.50 | 4.00 | 40.00 | 0.50 | 10.00 | \ | 1.00 | 0.50 | 0.50 | \ | \ | 2.00 |
To contrast clean-out system 1 '～5 ' and clean-out system 1～12 of the present invention and be used to clean blank Cu wafer, measure its corrosion situation for metal Cu.Method of testing and condition: the blank Cu wafer of 4 * 4cm is immersed clean-out system, under 45～90 ℃, utilize constant temperature oscillator with about 60 rev/mins vibration frequency vibration 60 minutes, behind deionized water wash, dry up then, utilize four utmost point probe machines to measure blank Cu chip etching front and rear surfaces changes in resistance and calculate with high pure nitrogen.The result is as shown in table 2.
To contrast clean-out system 1 '～5 ' and clean-out system 1～12 of the present invention and be used to clean blank Al wafer, measure its corrosion situation for metal A l.Method of testing and condition: the blank Al wafer of 4 * 4cm is immersed clean-out system, under 45～90 ℃, utilize constant temperature oscillator with about 60 rev/mins vibration frequency vibration 60 minutes, behind deionized water wash, dry up then, utilize four utmost point probe machines to measure blank Al chip etching front and rear surfaces changes in resistance and calculate with high pure nitrogen.The result is as shown in table 2.
To contrast clean-out system 1 '～5 ' and clean-out system 1～12 clean-out system of the present invention and be used to clean blank tetraethoxysilane (TEOS) wafer, measure its corrosion situation for nonmetal TEOS.Method of testing and condition: the blank TEOS wafer of 4 * 4cm is immersed clean-out system, under 45～90 ℃, utilize constant temperature oscillator, behind deionized water wash, dry up then with high pure nitrogen with about 60 rev/mins vibration frequency vibration 60 minutes.The change calculations of utilizing the Nanospec6100 thicknessmeter to measure blank TEOS wafer cleaning front and back TEOS thickness obtains, and the result is as shown in table 2.
Among the present invention, utilize the method for photoresist on the photoresist clean-out system cleaning semiconductor wafer as follows: (thickness is about 120 microns will to contain negativity acrylate photoresist, and through overexposure and etching) semiconductor wafer (containing pattern) immerse in the clean-out system, under 45～90 ℃, utilize constant temperature oscillator with about 60 rev/mins vibration frequency vibration 15～150 minutes, behind deionized water wash, dry up then with high pure nitrogen.The cleaning performance of photoresist and clean-out system are as shown in table 3 to the corrosion situation of wafer pattern.
Table 3 will contrast the corrosivity of clean-out system 1 '～5 ' and 1～12 couple of metal Cu of clean-out system of the present invention and Al and nonmetal TEOS and to the cleaning situation of thick film photolithography glue
As can be seen from Table 3, compare with contrast clean-out system 1 '～5 ', 1～12 pair of thick film photolithography glue of clean-out system of the present invention has excellent cleaning effect, the serviceability temperature scope is wide, corrosivity to metal Cu and Al and nonmetal TEOS is low simultaneously, and wafer pattern is not had damage and do not have corrosion dim spot (spot corrosion) phenomenon.
Claims (17)
1. thick film photolithography gluing cleaning agent is characterized in that: its contain dimethyl sulfoxide (DMSO), potassium hydroxide, alcamine compound, aryl alkyl pure and mild/or derivatives thereof and polycarboxylic acid compound.
2. clean-out system as claimed in claim 1 is characterized in that: the content of described dimethyl sulfoxide (DMSO) is mass percent 1～97%.
3. clean-out system as claimed in claim 1 is characterized in that: the content of described potassium hydroxide is mass percent 0.1～5%.
4. clean-out system as claimed in claim 1 is characterized in that: described alcamine compound is selected from one or more in monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, methyldiethanolamine, dimethylethanolamine and the AEEA.
5. clean-out system as claimed in claim 1 is characterized in that: the content of described alcamine compound is mass percent 1～50%.
6. clean-out system as claimed in claim 1 is characterized in that: and described aryl alkyl is pure and mild/and or derivatives thereof is selected from one or more in phenmethylol, phenylethyl alcohol, benzhydrol, p-aminophenyl methyl alcohol, o-benzyl alcohol, methylbenzyl alcohol, dimethylphenylcarbinol, trimethylbenzene methanol, phthalyl alcohol, isophthalic alcohol, terephthalyl alcohol, methylbenzene ethanol, equal amido phenenyl alcohol, phenylpropanol, benzene butanols, fenipentol and the benzene hexanol.
7. as the described clean-out system of claim .1, it is characterized in that: described aryl alkyl is pure and mild/and the content of or derivatives thereof is mass percent 1～50%.
8. clean-out system as claimed in claim 1 is characterized in that: described polycarboxylic acid compound is selected from one or more in polyacrylic compounds and derivant, poly-epoxy succinic acid compounds and derivant thereof, poly-aspartate compounds and derivant thereof and poly compounds and the derivant thereof.
9. clean-out system as claimed in claim 8, it is characterized in that: described polycarboxylic acid compound is selected from polyacrylic acid and multipolymer thereof, polymethylacrylic acid and multipolymer thereof, polyacrylate and multipolymer thereof, polymethacrylate and multipolymer thereof, polyacrylic acid alcohol amine salt and multipolymer thereof, polymethylacrylic acid alcohol amine salt and multipolymer thereof, polyoxyethylene ether modified polyacrylic acid and derivant thereof, acid of polyoxyethylene ether modified polymethyl and derivant thereof, polyoxyethylene ether modified poly-epoxy succinic acid and derivant thereof, in polyoxyethylene ether modified polyaspartic acid and derivant thereof and polyoxyethylene ether modification poly and the derivant thereof one or more
10. clean-out system as claimed in claim 1 is characterized in that: the molecular weight of described polycarboxylic acid compound is 500～100000.
11. clean-out system as claimed in claim 1 is characterized in that: the content of described polycarboxylic acid compound is mass percent 0.001～5%.
12. clean-out system as claimed in claim 1, it is characterized in that: described clean-out system also contains amino azole corrosion inhibiter, polarity organic cosolvent, surfactant, and in other corrosion inhibiter except that amino azole compound and polycarboxylic acid compound one or more.
13. clean-out system as claimed in claim 12 is characterized in that: the content of described amino azole corrosion inhibiter is mass percent 0～5%; The content of described polarity organic cosolvent is mass percent 0～50%; The content of described surfactant is mass percent 0～5%; The content of described other corrosion inhibiter except that amino azole compound and polycarboxylic acid compound is mass percent 0～5%.
14. clean-out system as claimed in claim 13 is characterized in that: the content of described amino azole corrosion inhibiter is mass percent 0.05～2.5%; The content of described polarity organic cosolvent is mass percent 5～30%; The content of described surfactant is mass percent 0.05～3%; The content of described other corrosion inhibiter except that amino azole compound and polycarboxylic acid compound is mass percent 0.05～3%.
15. clean-out system as claimed in claim 12, it is characterized in that: described amino azole corrosion inhibiter is a 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 5-amino-tetrazole, 1-methyl-5-amino-tetrazole, 3-amino-5-sulfydryl-1,2, the 4-triazole, the 2-aminooimidazole, the amino benzimidazole of 2-, diamido benzo imidazoles, thiazolamine, the 2-aminobenzothiazole, 2-An Ji oxazole, the amino benzoxazole of 2-, the 3-amino-pyrazol, the 3-aminocarbazole, the 6-Aminoindazole, 2-amino-1,3, the 4-thiadiazoles, 2-amino-5-sulfydryl-1,3,4-thiadiazoles and 5-amino-1,2, one or more in the 3-thiadiazoles; Described polarity organic cosolvent is selected from one or more in sulfoxide, sulfone, imidazolidinone and the alkylene glycol monoalkyl ether; Described surfactant is selected from one or more in polyvinyl alcohol (PVA), polyvinylpyrrolidone and the polyoxyethylene ether; Described other corrosion inhibiter except that amino azole compound and polycarboxylic acid compound is selected from amine and/or the azole except that amino azole.
16. clean-out system as claimed in claim 15 is characterized in that: described sulfoxide is the diethyl sulfoxide and/or the first and second basic sulfoxides; Described sulfone is one or more in methyl sulfone, ethyl sulfone and the sulfolane; Described imidazolidinone is a 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone and 1, one or more in 3-diethyl-2-imidazolidinone; Described alkylene glycol monoalkyl ether is selected from one or more in ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, the single ether of dipropylene glycol and the dipropylene glycol monobutyl ether; Described amine is selected from one or more in diethylenetriamine, triethylene tetramine, five ethene hexamines, polyethylene polyamine and the aminoethylpiperazine; Described azole except that amino azole is selected from one or more in benzotriazole, methyl benzotriazazole, benzotriazole triethanolamine salt, 1-phenyl-5-mercapto tetrazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole and the dimercaptothiodiazole.
17. clean-out system as claimed in claim 15 is characterized in that: the molecular weight of described surfactant is 500～20000.
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| CNA2008100328326A CN101487993A (en) | 2008-01-18 | 2008-01-18 | Thick-film photo resist cleaning agent |
| PCT/CN2009/000066 WO2009092292A1 (en) | 2008-01-18 | 2009-01-16 | Cleaning composition for thick film resist |
| CN2009801021036A CN101910953B (en) | 2008-01-18 | 2009-01-16 | Cleaning composition for thick film resist |
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| CNA2008100328326A CN101487993A (en) | 2008-01-18 | 2008-01-18 | Thick-film photo resist cleaning agent |
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| CN102566331A (en) * | 2010-12-21 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning fluid for thick-film photoresist |
| CN102147576B (en) * | 2010-02-09 | 2013-02-20 | 京东方科技集团股份有限公司 | Photoresist stripping liquid composition |
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| CN104531397A (en) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技（苏州）有限公司 | Cleaning solution for sheet glass substrate thinning pre-cleaning, and application thereof |
| CN109097201A (en) * | 2018-08-22 | 2018-12-28 | 江西宝盛半导体能源科技有限公司 | One kind removing glue and the preparation method and application thereof |
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| CN108212914A (en) * | 2018-01-08 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of 3D glass film disassembles the cleaning of rear residue glue |
| CN112540515B (en) * | 2020-12-16 | 2023-11-21 | 江苏艾森半导体材料股份有限公司 | Photoresist photoresist stripping solution and preparation method and application thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001022095A (en) * | 1999-07-02 | 2001-01-26 | Nippon Zeon Co Ltd | Positive type resist removing solution |
| US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
| KR101017738B1 (en) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | Photoresist stripping composition and cleaning composition |
| BR0311830A (en) * | 2002-06-07 | 2005-03-29 | Mallinckrodt Baker Inc | Microelectronic Arc Removing and Cleaning Compositions |
| CN1900146B (en) * | 2005-07-21 | 2012-02-29 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing liquid |
| CN1982426B (en) * | 2005-12-16 | 2011-08-03 | 安集微电子（上海）有限公司 | Slow-releasing agent system for cleaning semiconductor chip |
| US8288330B2 (en) * | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
| CN101169598A (en) * | 2006-10-27 | 2008-04-30 | 安集微电子（上海）有限公司 | Photoresist detergent |
| CN101286017A (en) * | 2007-04-13 | 2008-10-15 | 安集微电子（上海）有限公司 | Thick film photoresist cleaning agent |
-
2008
- 2008-01-18 CN CNA2008100328326A patent/CN101487993A/en active Pending
-
2009
- 2009-01-16 CN CN2009801021036A patent/CN101910953B/en not_active Expired - Fee Related
- 2009-01-16 WO PCT/CN2009/000066 patent/WO2009092292A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2010037267A1 (en) * | 2008-09-26 | 2010-04-08 | 安集微电子（上海）有限公司 | Rinse solution for removing thick film resist |
| CN102073226A (en) * | 2009-11-20 | 2011-05-25 | 安集微电子（上海）有限公司 | Thick film photoresist cleaning solution and cleaning method thereof |
| WO2011060617A1 (en) * | 2009-11-20 | 2011-05-26 | 安集微电子（上海）有限公司 | Rinse solution for removing thick film resist and removing method of using the same |
| CN102073226B (en) * | 2009-11-20 | 2014-03-26 | 安集微电子（上海）有限公司 | Thick film photoresist cleaning solution and cleaning method thereof |
| CN102147576B (en) * | 2010-02-09 | 2013-02-20 | 京东方科技集团股份有限公司 | Photoresist stripping liquid composition |
| CN102566331A (en) * | 2010-12-21 | 2012-07-11 | 安集微电子（上海）有限公司 | Cleaning fluid for thick-film photoresist |
| CN103046062A (en) * | 2012-12-29 | 2013-04-17 | 江苏飞拓界面工程科技有限公司 | Acid cleaning accelerant and preparation method thereof |
| CN103046062B (en) * | 2012-12-29 | 2014-10-22 | 江苏飞拓界面工程科技有限公司 | Acid cleaning accelerant and preparation method thereof |
| CN104531397A (en) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技（苏州）有限公司 | Cleaning solution for sheet glass substrate thinning pre-cleaning, and application thereof |
| CN109097201A (en) * | 2018-08-22 | 2018-12-28 | 江西宝盛半导体能源科技有限公司 | One kind removing glue and the preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009092292A1 (en) | 2009-07-30 |
| CN101910953A (en) | 2010-12-08 |
| CN101910953B (en) | 2012-08-22 |
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