CN101483198A - Ag/silicon composite structure ultraviolet probe and manufacturing method thereof - Google Patents
Ag/silicon composite structure ultraviolet probe and manufacturing method thereof Download PDFInfo
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- CN101483198A CN101483198A CNA2009100289773A CN200910028977A CN101483198A CN 101483198 A CN101483198 A CN 101483198A CN A2009100289773 A CNA2009100289773 A CN A2009100289773A CN 200910028977 A CN200910028977 A CN 200910028977A CN 101483198 A CN101483198 A CN 101483198A
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Abstract
The invention discloses an Ag/Si compound structure ultraviolet light detector with an Ag film layer, a monocrystalline silicon substrate and an ohm contact metal electrode from up to down, wherein the thickness of the Ag film layer is 20-80 nm; the thickness of the monocrystalline silicon substrate is 100-300 um; the ohm contact metal electroe is an Au, Pt or Al electrode and is a plane contact with a thickness of 100-500 nm; a contact face of the Ag film layer and the monocrystalline silicon substrate is a polishing surface. The invention also discloses a method for preparing said ultraviolet light detector. The invention combines the optical characteristic of the Ag film with the Si monocrystalline silicon substrate to realize a photoelectric response of the ultraviolet light, obtains a novel Ag/Si compound structure ultraviolet light detector and makes contribution for the development of the ultraviolet light detecting technique.
Description
Technical field
The present invention relates to a kind of ultraviolet light detector, be specifically related to a kind of Ag/ silicon composite structure ultraviolet probe and preparation method thereof.
Background technology
Ultraviolet light detector is the another dual-use detecting technique that grows up after infrared and laser acquisition technology, obtained extensive use at present, as the detection at sunlight middle-ultraviolet lamp intensity, rocket and guided missile wake flame, fields such as fire alarm have obtained application.Therefore, countries in the world are advanced in performance, reliable research, and the emphasis problem of research and development is classified in all solid state ultraviolet light detector with low cost as.
The ultraviolet light detector of having come into operation at present, mainly contains following a few class: ultravioplet photomultiplier, wide bandgap semiconductor UV photodetector and silica-based UV photodetector.Ultravioplet photomultiplier generally needs external complicated circuit to carry out the signal amplification, and volume is big, efficient is low, thereby is difficult to apply.The more wide bandgap semiconductor materials of research as SiC, GaN and diamond etc., receives much concern to be adapted at carrying out ultraviolet detector under the visible light background at present.Yet for the preparation of above-mentioned wide bandgap semiconductor materials, especially the preparation of PN junction needs the vacuum equipment and the material of application of expensive, complex process, and cost is higher.The technology maturation of Si material, it is the main material of making photo-detector, but because the band gap of Si is at 1.12eV, belong to narrow gap semiconductor, visible light, ultraviolet light that energy is higher than its band gap all can absorb, therefore need to cooperate expensive filter to use simultaneously, thereby further increased use cost.In view of Si has high absorption coefficient (〉 10 in ultraviolet light range
5/ cm) and quantum efficiency, there is very high photoelectric current to excite in ultraviolet light range.
On the other hand, the optical Properties to metal shows that the optical characteristics of metal is by the plasma oscillation frequencies omega
pDetermine, that is:
Wherein, N is the density of free electron, is 1 metal A u for valence electron, and Ag, N are 10
23/ cm
3E is an electron charge; M is the quality of electronics; ε
0Be permittivity of vacuum.Therefore, the h ω that calculates
pValue is about 9eV, far above the ultraviolet light frequency.Therefore, approach 1 greater than the metal of skin depth (20 nanometer) at the reflectivity that is lower than this plasma oscillation frequency, be transmitted as 0, and be higher than this plasma oscillation frequency, the optical characteristics of metal approaches dielectric, and light is had certain transmissivity.But Ag has a full up d electronic shell, and its electron configuration is [Kr] .4d
10.5s
1This d orbital electron is apart from very narrow being with in below of conduction band nanometer energy level, can be emitted to vacuum level by the d track, therefore, the plasma oscillation frequency of Ag not only needs to consider the effect of free valency electronics, also need to consider the effect of d electronics, near comprehensive effect made that the plasma oscillation frequency of Ag is moved to 3.9eV from 9eV, promptly wavelength was about the ultraviolet light of 318nm.Testing surface, the Ag film is that other metal is unexistent in the characteristic that near ultraviolet (320nm) has than the high light transmission, this is also confirmed by our experiment.On quartz glass, deposit the Ag film, and measure its transmission spectrum in the wave-length coverage of 200～800nm, as shown in Figure 2, near 320nm, 20nm, 40nm, the Ag film transmissivity that 80nm is thick is respectively 70%, 40%, 12%.From then on the result as can be seen, the thickness that uses the Ag film can make the transmissivity of other wavelength light approach 0 during greater than 40nm.Therefore, the ultraviolet light that certain thickness Ag thin film deposition should be played the 320nm wavelength to the Si substrate can the part transmission, the purpose that other light is reflected and absorbs, the ultraviolet light that is transmitted to the Si substrate can inspire electron-hole pair, form photoelectric current, thereby realize detection ultraviolet light.
Therefore, the optical characteristics of Ag film and the photoelectric characteristic of Si are combined, and then prepare simple in structure, high efficiency new ultra-violet photo-detector, have important practical significance.
Summary of the invention
The purpose of this invention is to provide a kind of Ag/ silicon composite structure ultraviolet probe and preparation method thereof, new ultra-violet photo-detector simple in structure to prepare, high efficiency.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of Ag/ silicon composite structure ultraviolet probe is followed successively by Ag thin layer, monocrystalline silicon substrate and metal ohmic contact electrode from top to bottom; The thickness of described Ag thin layer is 20～80nm; The thickness of described monocrystalline silicon substrate is 100～300um.
Above, described monocrystalline silicon substrate is a prior art, can be n type Si or p type Si, the monocrystalline silicon substrate of preferred single-sided polishing or twin polishing.Described Ag thin layer has following several effect: the Ag thin layer that 1. is twice in skin depth has intimate 100% reflection to visible light, its transmissivity is almost nil, and locate its transmissivity in the plasma oscillation frequency (about 320nm) of Ag an appreciable value is arranged; 2. can form a Schottky barrier between Ag and the Si substrate; 3. Ag can be used as top electrode and participates in the transmission photoelectric current.
Further technical scheme, the contact-making surface of described Ag thin layer and monocrystalline silicon substrate is a burnishing surface.The Ag thin layer is deposited on the burnishing surface, makes it have better effect.
In the technique scheme, described metal ohmic contact electrode is Au, Pt or Al electrode, and is plane contact, and thickness is 100～500nm.
The present invention asks for protection the preparation method of above-mentioned Ag/ silicon composite structure ultraviolet probe simultaneously, comprises the steps:
(1) to the preliminary treatment of monocrystalline silicon substrate: monocrystalline silicon substrate is cleaned, dries;
(2) adopt magnetron sputtering method or electron-beam vapor deposition method that the Ag thin layer is deposited on the upper strata burnishing surface of monocrystalline silicon substrate, the thickness of described Ag thin layer is 20～80nm;
(3) adopt magnetron sputtering method or electron-beam vapor deposition method at monocrystalline silicon substrate layer deposition metal ohmic contact electrode, described metal ohmic contact electrode is Au, Pt or Al electrode, and is plane contact, and thickness is 100～500nm.
Above, described magnetron sputtering method or electron-beam vapor deposition method are prior art.
In the technique scheme, the cleaning step in the described step (1) is: with HF acid soak ultrasonic cleaning 10～20 minutes, successively cleaned 10～20 minutes with deionized water and alcohol respectively then earlier.
In the technique scheme, the magnetron sputtering method in described step (2) or (3) comprises the steps:
(1) open the magnetron sputtering apparatus power supply, logical cooling water, vacuum chamber is opened in the vacuum chamber inflation, and high-purity Ag target or electrode metal target are installed, and lays the good monocrystalline silicon substrate of preliminary treatment, closes vacuum chamber; Described electrode metal target is Au, Pt or Al target;
(2) open mechanical pump, be evacuated to below the 5Pa; Drive molecular pump, pumping high vacuum to 10
-2Below the Pa;
(3) opened the radio frequency source preheating 5～15 minutes, logical argon gas transfers to 3～5Pa with cavity air pressure, the beginning sputter, and power transfers to 90～120 watts, sputter 0.5～5 minute.
In the technique scheme, the electron-beam vapor deposition method in described step (2) or (3) comprises the steps:
(1) open the electron beam evaporation equipment power supply, logical cooling water, vacuum chamber is opened in the vacuum chamber inflation, high-purity Ag target or electrode metal target is installed as evaporation source, lays the good monocrystalline silicon substrate of preliminary treatment, closes vacuum chamber; Described electrode metal target is Au, Pt or Al target;
(2) open mechanical pump, be evacuated to below the 5Pa; Drive molecular pump, pumping high vacuum to 10
-2Below the Pa;
(3) open the electron gun power supply, the size of regulating electron gun voltage, line and bombarding beam spot on the target, prevapourising was opened baffle plate then to remove evaporation source residual pollutant on surface thing in 1～2 minute, the beginning deposit film.
Operation principle of the present invention is: Ag thin layer and monocrystalline silicon substrate combination are good and form Schottky contacts, form an internal electric field in monocrystalline silicon substrate; When the light (as sunlight) of composite wavelength shines device surface, only there is near the ultraviolet light of the wavelength of 320nm transmission to cross metal A g rete, enter into the monocrystalline silicon substrate of below, and this ultraviolet light has very high absorption coefficient and quantum efficiency on monocrystalline silicon substrate, can effectively inspire electron-hole pair, separate under the effect of internal electric field, to Ag thin layer top electrode and the motion of metal ohmic contact electrode bottom electrode, externally circuit forms observable electric current respectively.And the ultraviolet light intensity is proportional to photoelectric current.
Because the employing of technique scheme, compared with prior art, the present invention has following advantage:
1. the present invention is attached to the optical characteristics of Ag film the photoelectric respone that realizes ultraviolet light on the monocrystal chip of Si, has obtained a kind of ultraviolet light detector of novel Ag/Si composite construction, for contribution has been made in the development of ultraviolet detector technology.
2. the ultraviolet light detector that obtains of the present invention is simple in structure, cost is lower and stable performance, has a good application prospect.
3. preparation method's technology of the present invention is simple, easy operating, and cost is lower, is suitable for applying.
Description of drawings
Fig. 1 is the structural representation of the ultraviolet light detector of the embodiment of the invention one;
Fig. 2 is the measured transmission spectrum of Ag film that deposits different-thickness in the background technology on quartz glass.
Wherein: 1, Ag thin layer; 2, monocrystalline silicon substrate; 3, metal ohmic contact electrode.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
Referring to shown in Figure 1, a kind of Ag/ silicon composite structure ultraviolet probe is followed successively by Ag thin layer 1, monocrystalline silicon substrate 2 and metal ohmic contact electrode 3 from top to bottom; The thickness of described Ag thin layer is 40nm; The thickness of described monocrystalline silicon substrate is about 200um; Described metal ohmic contact electrode is the Pt electrode, and is plane contact, and thickness is 200nm; The contact-making surface of described Ag thin layer and monocrystalline silicon substrate is a burnishing surface.
The preparation method of above-mentioned Ag/ silicon composite structure ultraviolet probe comprises the steps:
(1) to the preliminary treatment of monocrystalline silicon substrate: the monocrystalline silicon substrate of single-sided polishing or twin polishing with HF acid soak ultrasonic cleaning 10～20 minutes, was successively cleaned 10～20 minutes with deionized water and alcohol respectively then, dry;
(2) open the magnetron sputtering apparatus power supply, logical cooling water, vacuum chamber is opened in the vacuum chamber inflation, and high-purity Ag target is installed, and lays the good monocrystalline silicon substrate of preliminary treatment, and burnishing surface rushes to, and closes vacuum chamber;
(3) open mechanical pump, be evacuated to 1Pa; Drive molecular pump, pumping high vacuum to 10
-4Pa;
(4) opened the radio frequency source preheating 10 minutes, logical argon gas, flow is 50sccm, and cavity air pressure is transferred to 3Pa, the beginning sputter, power transfers to 120 watts, sputter 1 minute;
(5) successively close argon gas, radio-frequency power supply, molecular pump and mechanical pump; Vacuum chamber is opened in the vacuum chamber inflation, takes off the Ag target, changes metal Pt target, the face that has deposited the Si sheet of Ag film is swept away be placed on the clean glass substrate, closes vacuum chamber;
(6) open mechanical pump, be evacuated to 1Pa; Drive molecular pump, pumping high vacuum to 10
-4Pa; Opened the radio frequency source preheating 10 minutes, logical argon gas transfers to 3Pa with cavity air pressure, and flow is 50sccm, the beginning sputter, and power transfers to 150 watts, sputter 5 minutes;
(7) successively close argon gas, radio-frequency power supply, molecular pump and mechanical pump; Vacuum chamber is opened in the vacuum chamber inflation, takes out the Si sheet that has deposited Ag film and Pt film, takes off the Pt target;
(8) close vacuum chamber, open mechanical pump, take out low vacuum to 10Pa; Close mechanical pump, close cooling water, close the sputtering unit power supply;
(9) the last Ag film that on Si substrate burnishing surface, deposits thick about 40nm, the Pt film at the back side is 200nm;
The gained sample is connected with external circuit: with elargol upper/lower electrode is picked out two copper conductors respectively, guarantee contact well between lead and the electrode; Between lead, insert the little ammeter of pA level then; Select a bright day gas, cover the black cardboard of a perforate on the device, the about 25mm of aperture area
2Sunlight incides device by aperture, and upper/lower electrode is connected to an ammeter.Measure in the different time periods: the 9:00 photoelectric current can reach 80uA, and the .11:00 photoelectric current can reach 110uA; .13:00 photoelectric current can reach 125uA; The 15:00 photoelectric current can reach 100uA; Sunlight is blocked, and dark current is about 4uA.Since the existence of the thick Ag film of 40nm, measured photoelectric current mainly by near the institute of the ultraviolet light 320nm electrons excited-hole to produce.The photoelectric current dark current of comparing has 15～30 times raising.
Embodiment two
A kind of Ag/ silicon composite structure ultraviolet probe is followed successively by Ag thin layer, monocrystalline silicon substrate and metal ohmic contact electrode from top to bottom; The thickness of described Ag thin layer is 40nm; The thickness of described monocrystalline silicon substrate is about 200um; Described metal ohmic contact electrode is the Pt electrode, and is plane contact, and thickness is 200nm; The contact-making surface of described Ag thin layer and monocrystalline silicon substrate is a burnishing surface.
The preparation method of above-mentioned Ag/ silicon composite structure ultraviolet probe comprises the steps:
(1) to the preliminary treatment of monocrystalline silicon substrate: the monocrystalline silicon substrate of single-sided polishing or twin polishing with HF acid soak ultrasonic cleaning 10～20 minutes, was successively cleaned 10～20 minutes with deionized water and alcohol respectively then, dry;
(2) open the electron-beam coating equipment power supply, logical cooling water, vacuum chamber is opened in the vacuum chamber inflation, and high-purity Ag evaporation source is installed in the evaporation source pot, lays the good monocrystalline silicon substrate of preliminary treatment, and burnishing surface closes vacuum chamber towards evaporation source;
(3) open mechanical pump, be evacuated to 1Pa; Drive molecular pump, pumping high vacuum to 10
-4Pa;
(4) open the electron gun power supply, electron gun voltage is-8.0kV, regulates line 10mA, and regulating the beam spot size of bombarding on the target is 3 * 3mm
2, prevapourising was opened baffle plate and is begun the depositing silver film to remove evaporation source residual pollutant on surface thing in 2 minutes then; Use the crystal oscillator system to monitor thickness in real time, evaporation obtained the thick Ag film of 40nm in 6 minutes;
(5) successively close electron gun power supply, molecular pump and mechanical pump power supply then; Vacuum chamber is opened in the vacuum chamber inflation, takes out the Ag evaporation source, changes metal Pt evaporation source, and the back side that has deposited the Si sheet of Ag film is placed towards evaporation source, closes vacuum chamber;
(6) open mechanical pump, be evacuated to 1Pa; Drive molecular pump, pumping high vacuum to 10
-4Pa; Open the electron gun power supply, electron gun voltage is-8.0kV, regulates line 10mA, and regulating the beam spot size of bombarding on the target is 3 * 3mm
2, prevapourising was opened baffle plate and is begun to deposit the Pt film to remove evaporation source residual pollutant on surface thing in 2 minutes then; Use the crystal oscillator system to monitor thickness in real time, evaporation obtained the thick Pt film of 200nm in 20 minutes;
(7) successively close electron gun power supply, molecular pump and mechanical pump power supply then; Vacuum chamber is opened in the vacuum chamber inflation, takes out the Ag evaporation source, changes metal Pt evaporation source, and the Si sheet that has deposited Ag and Pt film is taken out;
(8) close vacuum chamber, open mechanical pump, take out low vacuum to 10Pa; Close mechanical pump, close cooling water, close the electron beam evaporation equipment power supply;
(9) the last Ag film that on Si substrate burnishing surface, deposits thick about 40nm, the Pt film at the back side is 200nm;
The gained sample is connected with external circuit: with elargol upper/lower electrode is picked out two copper conductors respectively, guarantee contact well between lead and the electrode; Between lead, insert the little ammeter of pA level then; Select a bright day gas, cover the black cardboard of a perforate on the device, the about 25mm of aperture area
2Sunlight incides device by aperture, and upper/lower electrode is connected to an ammeter.Measure in the different time periods: the 9:00 photoelectric current can reach 50uA; The 11:00 photoelectric current can reach 100uA; The 13:00 photoelectric current can reach 120uA; The 15:00 photoelectric current can reach 95uA; Sunlight is blocked, and dark current is about 3uA.Since the existence of the thick Ag film of 40nm, measured photoelectric current mainly by near the institute of the ultraviolet light 320nm electrons excited-hole to produce.The photoelectric current dark current of comparing has 15～30 times raising.
Claims (7)
1. an Ag/ silicon composite structure ultraviolet probe is characterized in that: be followed successively by Ag thin layer, monocrystalline silicon substrate and metal ohmic contact electrode from top to bottom; The thickness of described Ag thin layer is 20～80nm; The thickness of described monocrystalline silicon substrate is 100～300um.
2. Ag/ silicon composite structure ultraviolet probe according to claim 1 is characterized in that: the contact-making surface of described Ag thin layer and monocrystalline silicon substrate is a burnishing surface.
3. Ag/ silicon composite structure ultraviolet probe according to claim 1 is characterized in that: described metal ohmic contact electrode is Au, Pt or Al electrode, and is plane contact, and thickness is 100～500nm.
4. the preparation method of an Ag/ silicon composite structure ultraviolet probe is characterized in that, comprises the steps:
(1) to the preliminary treatment of monocrystalline silicon substrate: monocrystalline silicon substrate is cleaned, dries;
(2) adopt magnetron sputtering method or electron-beam vapor deposition method that the Ag thin layer is deposited on the upper strata burnishing surface of monocrystalline silicon substrate, the thickness of described Ag thin layer is 20～80nm;
(3) adopt magnetron sputtering method or electron-beam vapor deposition method at monocrystalline silicon substrate layer deposition metal ohmic contact electrode, described metal ohmic contact electrode is Au, Pt or Al electrode, and is plane contact, and thickness is 100～500nm.
5. the preparation method of Ag/ silicon composite structure ultraviolet probe according to claim 4, it is characterized in that, cleaning step in the described step (1) is: with HF acid soak ultrasonic cleaning 10～20 minutes, successively cleaned 10～20 minutes with deionized water and alcohol respectively then earlier.
6. the preparation method of Ag/ silicon composite structure ultraviolet probe according to claim 4 is characterized in that, the magnetron sputtering method in described step (2) or (3) comprises the steps:
(1) open the magnetron sputtering apparatus power supply, logical cooling water, vacuum chamber is opened in the vacuum chamber inflation, and high-purity Ag target or electrode metal target are installed, and lays the good monocrystalline silicon substrate of preliminary treatment, closes vacuum chamber; Described electrode metal target is Au, Pt or Al target;
(2) open mechanical pump, be evacuated to below the 5Pa; Drive molecular pump, pumping high vacuum to 10
-2Below the Pa;
(3) opened the radio frequency source preheating 5～15 minutes, logical argon gas transfers to 3～5Pa with cavity air pressure, the beginning sputter, and power transfers to 90～120 watts, sputter 0.5～5 minute.
7. the preparation method of Ag/ silicon composite structure ultraviolet probe according to claim 4 is characterized in that, the electron-beam vapor deposition method in described step (2) or (3) comprises the steps:
(1) open the electron beam evaporation equipment power supply, logical cooling water, vacuum chamber is opened in the vacuum chamber inflation, high-purity Ag target or electrode metal target is installed as evaporation source, lays the good monocrystalline silicon substrate of preliminary treatment, closes vacuum chamber; Described electrode metal target is Au, Pt or Al target;
(2) open mechanical pump, be evacuated to below the 5Pa; Drive molecular pump, pumping high vacuum to 10
-2Below the Pa;
(3) open the electron gun power supply, the size of regulating electron gun voltage, line and bombarding beam spot on the target, prevapourising was opened baffle plate then to remove evaporation source residual pollutant on surface thing in 1～2 minute, the beginning deposit film.
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| CN101776709B (en) * | 2010-01-15 | 2012-04-04 | 苏州大学 | Measurement method used for characterizing light current of ferroelectric film |
| CN105609412A (en) * | 2016-03-23 | 2016-05-25 | 云南大学 | Rapid annealing preparation method of Al-Si<+> ohmic contact electrode |
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| CN111063752A (en) * | 2019-08-13 | 2020-04-24 | 合肥工业大学 | Thickness-regulated Schottky junction inorganic narrow-band photoelectric detector and preparation method thereof |
| CN111063752B (en) * | 2019-08-13 | 2021-11-19 | 合肥工业大学 | Thickness-regulated Schottky junction inorganic narrow-band photoelectric detector and preparation method thereof |
| CN112331737A (en) * | 2020-10-30 | 2021-02-05 | 苏州大学 | Ultraviolet-visible-near infrared silicon-based photoelectric detector and preparation method thereof |
| CN112331737B (en) * | 2020-10-30 | 2022-05-03 | 苏州大学 | Ultraviolet-visible-near infrared silicon-based photoelectric detector and preparation method thereof |
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