CN101481080A - Method for manufacturing miniaturized fluxgate sensor - Google Patents
Method for manufacturing miniaturized fluxgate sensor Download PDFInfo
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- CN101481080A CN101481080A CNA2009100461011A CN200910046101A CN101481080A CN 101481080 A CN101481080 A CN 101481080A CN A2009100461011 A CNA2009100461011 A CN A2009100461011A CN 200910046101 A CN200910046101 A CN 200910046101A CN 101481080 A CN101481080 A CN 101481080A
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Abstract
The invention provides a method for producing a minimized fluxgate sensor in the micro electromechanical technical field, which comprises the following steps: producing a double-sized alignment symbol; sputtering a bottom layer; flinging positive photoresists, exposing and developing; plating a drive coil and a bottom layer coil of a receiving coil, connecting a conductor with a pin of the coil; removing photosensitive resist and a bottom layer; flinging polyimide, solidifying and polishing; sputtering the bottom layer; flinging positive photoresists, exposing and developing; plating a magnetic core, connecting the conductor with a pin; removing positive photoresists and the bottom layer; flinging polyimide, solidifying and polishing; sputtering the bottom layer; flinging the positive photoresists, exposing and developing; plating the drive coil and a top layer coil of the receiving coil and a pin; removing the photosensitive resist and the bottom layer; and magnetic annealing. The invention solves the problems of the traditional fluxgate sensor of poor stability, poor repetitiveness and poor mass production, ensures that the production technique is compatible with the large-scale integrated circuit technique, can be manufactured by integrating the interface circuit, and is widely applied in a plurality of new fields.
Description
Technical field
What the present invention relates to is a kind of preparation method of magneto-dependent sensor of field of micro electromechanical technology, specifically is a kind of preparation method of the miniaturized fluxgate sensor based on MEMS (MEMS) technology.
Background technology
Magneto-dependent sensor is a solid-state devices that can sensing magnetic field can therefrom obtain information again, and its information translation relevant with magnetic induction intensity becomes the signal of telecommunication.Utilize magneto-dependent sensor to carry out the detection and the measurement in magnetic field, especially, have very important application prospect and technological value in automotive electronics, industrial process control, biomedicine, Aero-Space etc. to the detection and the measurement of low-intensity magnetic field.As highly sensitive low-intensity magnetic field sensor, can be widely used in flight attitude control, submarine detection, geophysical exploration, package detection of the digital compass of naval vessel and vehicle etc. and navigation system, space interplanetary magnetic-field measurement and application, aircraft and little satellite etc.Current demand to weak magnetic sensor forces scientist to improve sensitivity, the microminiaturization and integrated with Circuits System of magneto-dependent sensor.Fluxgate sensor has been used for the detection of submarine as a kind of low-intensity magnetic field detection means when World War II, be widely used as attitude sensor especially at satellite emission, carrier rocket, spacecraft etc. in recent years.Traditional fluxgate sensor uses a firm skeleton as pedestal, the banded magnetic core of soft magnetism is fixed on the skeleton, then winding around thereon.Consequently big, the high weight of volume, sensitivity are low and long-time stability are poor.Since the nineties, the develop rapidly of MEMS (MEMS) technology is for the development of miniaturized fluxgate sensor provides an approach effectively reliably.Adopt MEMS technology development microminiaturization, integrated fluxgate sensor to become the focus of domestic and international research and development.Compare with traditional fluxgate sensor, MEMS fluxgate sensor compact conformation, little, the light weight of volume, Installation and Debugging are simple, are not afraid of shock impacts, and it is little influenced by variation of ambient temperature.Adopt the miniaturized fluxgate sensor of MEMS technology development, can be widely used in the detection and telecommunication satellite of the navigation of Aero-Space, vehicle, tank and aircraft and location, submarine and metal object.
Find through literature search prior art, T.M.Liakopouls etc. (Trifon M.Liakopoulosand Chong H.Ahn) are at " SENSORS AND ACTUATORS " (sensor and actuator) (VOL.77, pp.66-72,1999) delivered " A Micro-Fluxgate Magnetic Sensor UsingMicromachined Planar Solenoid Coils " (adopting the miniaturized fluxgate sensor of micromechanics plane thread pipeline circle) literary composition on, this article has been mentioned by the miniaturized fluxgate sensor of permalloy as the plane thread pipeline circle of magnetic core.The author adopts thick adhesive process of UV-LIGA and electroplating technology, at the plane 3-dimension magnetic core solenoid coil of having developed on glass, as excitation and receiving coil.Magnetic core is rectangle-loop configuration, is the permalloy that adopts electroplating technology to electroplate.This fluxgate sensor is made up of glass substrate, copper solenoid coil, permalloy magnetic core and photoresist, adopts parallel fluxgate structural design, and excitation coil and receiving coil are in parallel position, and device has low measurement category.In addition, the author adopts photoresist to make insulating barrier, and shortcoming such as photoresist has that bad mechanical property, intensity are low, poor insulativity and poor heat stability is influenced greatly by foreign impacts.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of preparation method of miniaturized fluxgate sensor is provided, make the miniaturized fluxgate sensor that obtains have broad linear measurement range, lower power consumption, good heat endurance, volume little, in light weight, be not afraid of characteristics such as shock impacts and mass production, can be widely used in the detection and telecommunication satellite of the navigation of Aero-Space, vehicle and aircraft etc. and location, submarine and metal object.
The present invention is achieved by the following technical solutions, and the present invention adopts MEMS (MEMS) technology, at first makes the double-sided overlay alignment symbology on backing material, so that improve alignment precision during exposure; Adopt standard-LIGA photoetching technique and microplating technology to prepare excitation coil and receiving coil; Adopt the physical etchings technology to remove bottom, the undercutting phenomenon of avoiding wet-etching technology to bring; Adopt the microplating technology to prepare the NiFe core material; Adopt polyimides to do the insulation material, polyimides not only plays insulating effect, also plays the effect of support, parcel; Adopt precision polishing technique, efficiently solve the interconnect problem of the upper and lower layer line circle of excitation coil and receiving coil.
The preparation method of miniaturized fluxgate sensor involved in the present invention comprises the steps:
The one side sputter Cr layer of the first step, the glass substrate crossed in cleaning treatment, positive-glue removing, oven dry; Exposure, development; Etching Cr layer; Remove photoresist, get rid of polyimides, baking and curing, obtain the double-sided overlay alignment symbology;
Second the step, at the another side deposit Cr/Cu of glass substrate bottom, below technology (the 3rd went on foot for the 9th step) all on this face, carry out;
The 3rd step, positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplating ground loop; Positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains the photoresist figure of bonding conductor; Electroplate bonding conductor; Positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains the photoresist figure of pin; Electroplate pin; Remove photoresist, etching Cr/Cu bottom;
The 4th goes on foot, gets rid of polyimides, baking and curing; The polishing polyimides is till bonding conductor and pin exposure;
The 5th step, sputter Cr/Cu/Cr bottom; Positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains electroplating the photoresist figure of magnetic core; Etching Cr layer; Electroplate magnetic core; Remove photoresist;
The 6th step, positive-glue removing, oven dry; Double-sided overlay exposure, development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Etching Cr layer; Electroplate bonding conductor and pin; Remove photoresist, etching Cr layer is at the bottom of the etching Cr/Cu layer;
The 7th goes on foot, gets rid of polyimides, baking and curing; The polishing polyimides is till pin and bonding conductor exposure;
The 8th step, sputter Cr/Cu bottom; Positive-glue removing, oven dry; Double-sided overlay exposure, development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin;
The 9th step, remove photoresist, etching Cr/Cu bottom, vacuum magnetic field annealing.
The described first step is specially: the one side sputter Cr layer of the glass substrate of crossing in cleaning treatment, and thickness is 100-300nm, and positive-glue removing, photoresist thickness are 5-10 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 30 minutes; After the substrate exposure, developing, adopt wet chemical technology etching Cr layer; Remove photoresist, get rid of polyimides and baking and curing, thickness is 3-5 μ m, obtains the double-sided overlay alignment symbology.
In second step, described Cr/Cu bottom, thickness are 80-100nm.
In described the 3rd step, be specially: positive-glue removing, photoresist thickness are 10-20 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; Double-sided overlay exposure, develop, obtain electroplating the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplate the bottom coil of excitation coil and receiving coil then, thickness is 10-20 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 10 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of bonding conductor; Electroplate bonding conductor, thickness is 10 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 5 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 30 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of pin; Electroplate pin, thickness is 10 μ m, and plated material is a copper; Remove all photoresists with acetone, with Ar plasma etch process etching Cr/Cu bottom.
In described the 4th step and the 7th step, get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till bonding conductor and pin exposure.
In described the 5th step, be specially: sputter Cr/Cu/Cr bottom, thickness are 20nm/150nm/30nm; Positive-glue removing, the thickness of photoresist are 10-20 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; Double-sided overlay exposes and develops, and obtains the photoresist figure of electroplated Ni Fe magnetic core; Adopt wet chemical technology etching Cr layer; Electroplated Ni Fe magnetic core, thickness are 10-20 μ m; Remove all photoresists with acetone.
In described the 6th step, be specially: positive-glue removing, the thickness of photoresist are 20-30 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 90 minutes; Double-sided overlay exposure and development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Adopt wet chemical technology etching Cr layer; Electroplate bonding conductor and pin, thickness is 20-30 μ m, and plated material is a copper; Remove photoresist with acetone, adopt wet chemical technology etching Cr layer, at the bottom of Ar plasma etch process etching Cr/Cu layer.
In described the 8th step, be specially: sputter Cr/Cu bottom, thickness are 80-100nm; Positive-glue removing, photoresist thickness are 10-20 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; Double-sided overlay exposure and development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin, thickness are 10-20 μ m, and plated material is a copper.
In described the 9th step, be specially: remove photoresist, with Ar plasma etch process etching Cr/Cu bottom, with the 250 ℃ of following magnetic-field annealings 3 hours in vacuum drying oven of the miniaturized fluxgate sensor that obtains.
The present invention compared with prior art has following useful effect:
(1) the present invention has changed traditional employing method for winding making core structure solenoid type fluxgate sensor, and adopt micro electro mechanical system (MEMS) technology to develop miniaturized fluxgate sensor, micro electro mechanical system (MEMS) technology can be compatible fully with large scale integrated circuit, is easy to produce good reproducibility in enormous quantities;
(2) the present invention adopts Ar plasma etch process etching bottom, has avoided wet etching the undercutting phenomenon to occur, obtains uniform excitation coil and receiving coil;
(3) to adopt polyimides be insulating barrier in the present invention, and polyimides has good heat endurance, excellent mechanical performance and good resistance against environmental influences;
(4) the present invention adopts polyimide material as encapsulant, the whole fluxgate sensor of sealed envelope, and the aerial oxidation of state lower coil and magnetic core of having avoided working long hours has prolonged service life of fluxgate sensor;
(5) the present invention adopts precise polished technology, has improved the flatness of substrate in the sensor machining process, has solved excitation coil effectively and has been connected the problem that occurs opening circuit with the receiving coil levels, has solved the uniformity and the yield rate of sensor simultaneously again;
(6) the present invention adopts micro electro mechanical system (MEMS) technology development miniaturized fluxgate sensor, compares good stability, repeatability height with the conventional fluxgate sensor, does not have the Installation and Debugging process, and is more firm, is not subject to the influence of variation of ambient temperature and applied stress;
(7) the present invention adopts micro electro mechanical system (MEMS) technology, and can directly realize on the basis of single shaft miniaturized fluxgate sensor provides more magnetic measurement function by two miniaturized fluxgate sensors, does not need extra manufacturing process and Installation and Debugging process; Can realize the fluxgate sensor array;
(8) the present invention adopts micro electro mechanical system (MEMS) technology, technical process can directly constitute the fluxgate sensor product of different purposes with the integrated manufacturing of interface circuit, be widely used in GPS location, guided missile inertial guidance system, the attitude control of moonlet orientation of various portable type electronic products such as mobile phone, notebook computer etc.
The specific embodiment
Below embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
The miniaturized fluxgate sensor that following examples prepare based on micro electro mechanical system (MEMS) technology, form by substrate, excitation coil, receiving coil, magnetic core, polyimide foam insulation and pin, two groups of three-dimensional motivating solenoid coils that link to each other of symmetrical coiling on the closed rectangle magnetic core, one group of three-dimensional solenoid receiving coil of vertical coiling with excitation coil.Excitation coil and receiving coil all are positioned on the substrate, be connected to form by bonding conductor by bottom coil, top layer coil, excitation coil is connected pin with the receiving coil two ends, and the bottom coil of excitation coil and receiving coil, top layer coil, bonding conductor are all isolated by polyimide foam insulation and magnetic core insulation.The NiFe alloy material of magnetic core for electroplating.
Embodiment 1
(1), one side (being called reverse side) the sputter Cr layer of the glass substrate crossed in cleaning treatment, thickness is 100nm, positive-glue removing, photoresist thickness are 5 μ m, the photoresist bake out temperature is 95 ℃, the time is 30 minutes; After the substrate exposure, developing, adopt wet chemical technology etching Cr layer; Remove photoresist, get rid of polyimides and baking and curing, thickness is 3 μ m, obtains the double-sided overlay alignment symbology;
(2), at another side (being called the front) the deposit Cr/Cu of substrate bottom, thickness is 80nm.Following technology is all carried out on the front;
(3), positive-glue removing, photoresist thickness is 10 μ m, the photoresist bake out temperature is 95 ℃, the time is 60 minutes; Double-sided overlay exposure, develop, obtain electroplating the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplate the bottom coil of excitation coil and receiving coil then, thickness is 10 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 10 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 60 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of bonding conductor; Electroplate bonding conductor, thickness is 10 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 5 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 30 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of pin; Electroplate pin, thickness is 10 μ m, and plated material is a copper; Remove all photoresists with acetone, with Ar plasma etch process etching Cr/Cu bottom;
(4), get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till bonding conductor and pin exposure;
(5), sputter Cr/Cu/Cr bottom, thickness is 20nm/150nm/30nm; Positive-glue removing, the thickness of photoresist are 10 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 60 minutes; Double-sided overlay exposes and develops, and obtains the photoresist figure of electroplated Ni Fe magnetic core; Adopt wet chemical technology etching Cr layer; Electroplated Ni Fe magnetic core, thickness are 10 μ m; Remove all photoresists with acetone;
(6), positive-glue removing, the thickness of photoresist is 20 μ m, the photoresist bake out temperature is 95 ℃, the time is 90 minutes; Double-sided overlay exposure and development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Adopt wet chemical technology etching Cr layer; Electroplate bonding conductor and pin, thickness is 20 μ m, and plated material is a copper; Remove photoresist with acetone, adopt wet chemical technology etching Cr layer, at the bottom of Ar plasma etch process etching Cr/Cu layer;
(7), get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till pin and bonding conductor exposure;
(8), sputter Cr/Cu bottom, thickness is 80nm; Positive-glue removing, photoresist thickness are 10 μ m, and the photoresist bake out temperature is 95 ℃, and the time is 60 minutes; Double-sided overlay exposure and development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin, thickness are 10 μ m, and plated material is a copper;
(9), remove photoresist, with Ar plasma etch process etching Cr/Cu bottom, with the 250 ℃ of following magnetic-field annealings 3 hours in vacuum drying oven of the miniaturized fluxgate sensor that obtains.
The miniaturized fluxgate sensor that present embodiment makes based on micro electro mechanical system (MEMS) technology, size is less than 6mm * 5mm, when a logical frequency in the excitation coil be 40KHz, when current amplitude is the alternating current of 300mA, receiving coil can detect ± the following magnetic field of 50nT, and linearity measuring range is ± 100 μ T.
Embodiment 2
(1), one side (being called reverse side) the sputter Cr layer of the glass substrate crossed in cleaning treatment, thickness is 200nm, positive-glue removing, photoresist thickness are 8 μ m, the photoresist bake out temperature is 95 ℃, the time is 30 minutes; After the substrate exposure, developing, adopt wet chemical technology etching Cr layer; Remove photoresist, get rid of polyimides and baking and curing, thickness is 4 μ m, obtains the double-sided overlay alignment symbology;
(2), at another side (being called the front) the deposit Cr/Cu of substrate bottom, thickness is 90nm.Following technology is all carried out on the front;
(3), positive-glue removing, photoresist thickness is 15 μ m, the photoresist bake out temperature is 92 ℃, the time is 60 minutes; Double-sided overlay exposure, develop, obtain electroplating the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplate the bottom coil of excitation coil and receiving coil then, thickness is 15 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 10 μ m, and the photoresist bake out temperature is 92 ℃, and the time is 60 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of bonding conductor; Electroplate bonding conductor, thickness is 10 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 5 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 30 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of pin; Electroplate pin, thickness is 10 μ m, and plated material is a copper; Remove all photoresists with acetone, with Ar plasma etch process etching Cr/Cu bottom;
(4), get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till bonding conductor and pin exposure;
(5), sputter Cr/Cu/Cr bottom, thickness is 20nm/150nm/30nm; Positive-glue removing, the thickness of photoresist are 15 μ m, and the photoresist bake out temperature is 92 ℃, and the time is 60 minutes; Double-sided overlay exposes and develops, and obtains the photoresist figure of electroplated Ni Fe magnetic core; Adopt wet chemical technology etching Cr layer; Electroplated Ni Fe magnetic core, thickness are 15 μ m; Remove all photoresists with acetone;
(6), positive-glue removing, the thickness of photoresist is 25 μ m, the photoresist bake out temperature is 92 ℃, the time is 90 minutes; Double-sided overlay exposure and development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Adopt wet chemical technology etching Cr layer; Electroplate bonding conductor and pin, thickness is 25 μ m, and plated material is a copper; Remove photoresist with acetone, adopt wet chemical technology etching Cr layer, at the bottom of Ar plasma etch process etching Cr/Cu layer;
(7), get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till pin and bonding conductor exposure;
(8), sputter Cr/Cu bottom, thickness is 90nm; Positive-glue removing, photoresist thickness are 15 μ m, and the photoresist bake out temperature is 92 ℃, and the time is 60 minutes; Double-sided overlay exposure and development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin, thickness are 15 μ m, and plated material is a copper;
(9), remove photoresist, with Ar plasma etch process etching Cr/Cu bottom, with the 250 ℃ of following magnetic-field annealings 3 hours in vacuum drying oven of the miniaturized fluxgate sensor that obtains.
The miniaturized fluxgate sensor that present embodiment makes based on micro electro mechanical system (MEMS) technology, size is less than 6mm * 5mm, when a logical frequency in the excitation coil be 40KHz, when current amplitude is the alternating current of 300mA, receiving coil can detect ± the following magnetic field of 50nT, and linearity measuring range is ± 150 μ T.
Embodiment 3
(1), one side (being called reverse side) the sputter Cr layer of the glass substrate crossed in cleaning treatment, thickness is 300nm, positive-glue removing, photoresist thickness are 10 μ m, the photoresist bake out temperature is 95 ℃, the time is 30 minutes; After the substrate exposure, developing, adopt wet chemical technology etching Cr layer; Remove photoresist, get rid of polyimides and baking and curing, thickness is 5 μ m, obtains the double-sided overlay alignment symbology;
(2), at another side (being called the front) the deposit Cr/Cu of substrate bottom, thickness is 80-100nm.Following technology is all carried out on the front;
(3), positive-glue removing, photoresist thickness is 20 μ m, the photoresist bake out temperature is 90 ℃, the time is 60 minutes; Double-sided overlay exposure, develop, obtain electroplating the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplate the bottom coil of excitation coil and receiving coil then, thickness is 20 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 10 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 60 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of bonding conductor; Electroplate bonding conductor, thickness is 10 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 5 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 30 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of pin; Electroplate pin, thickness is 10 μ m, and plated material is a copper; Remove all photoresists with acetone, with Ar plasma etch process etching Cr/Cu bottom;
(4), get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till bonding conductor and pin exposure;
(5), sputter Cr/Cu/Cr bottom, thickness is 20nm/150nm/30nm; Positive-glue removing, the thickness of photoresist are 20 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 60 minutes; Double-sided overlay exposes and develops, and obtains the photoresist figure of electroplated Ni Fe magnetic core; Adopt wet chemical technology etching Cr layer; Electroplated Ni Fe magnetic core, thickness are 20 μ m; Remove all photoresists with acetone;
(6), positive-glue removing, the thickness of photoresist is 30 μ m, the photoresist bake out temperature is 90 ℃, the time is 90 minutes; Double-sided overlay exposure and development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Adopt wet chemical technology etching Cr layer; Electroplate bonding conductor and pin, thickness is 30 μ m, and plated material is a copper; Remove photoresist with acetone, adopt wet chemical technology etching Cr layer, at the bottom of Ar plasma etch process etching Cr/Cu layer;
(7), get rid of polyimides, thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till pin and bonding conductor exposure;
(8), sputter Cr/Cu bottom, thickness is 100nm; Positive-glue removing, photoresist thickness are 20 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 60 minutes; Double-sided overlay exposure and development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin, thickness are 20 μ m, and plated material is a copper;
(9), remove photoresist, with Ar plasma etch process etching Cr/Cu bottom, with the 250 ℃ of following magnetic-field annealings 3 hours in vacuum drying oven of the miniaturized fluxgate sensor that obtains.
The miniaturized fluxgate sensor that present embodiment makes based on micro electro mechanical system (MEMS) technology, size is less than 6mm * 5mm, when a logical frequency in the excitation coil be 40KHz, when current amplitude is the alternating current of 300mA, receiving coil can detect ± the following magnetic field of 50nT, and linearity measuring range is ± 200 μ T.
In the foregoing description, described Cr/Cu bottom, its preparation parameter is: the vacuum of substrate is 3 * 10
-4Pa, sputtering condition are chosen as sputter Ar air pressure and sputtering power is respectively 0.67Pa and 600W, and argon flow amount is 50SCCM.
Described employing wet chemical technology etching Cr layer, wherein the solution concentration of Cai Yonging is HCI:H
2O=30:70, temperature is 45 ℃.
Described baking and curing polyimides, concrete parameter is: elder generation's low speed was kept 10 seconds for 800 rev/mins when getting rid of polyimides, kept 30 seconds for quick again 2000 rev/mins, dry then, curing process is: 120 ℃, 180 ℃, 220 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last.
Claims (10)
1, a kind of preparation method of miniaturized fluxgate sensor is characterized in that, comprises the steps:
The one side sputter Cr layer of the first step, the glass substrate crossed in cleaning treatment, positive-glue removing, oven dry; Exposure, development; Etching Cr layer; Remove photoresist, get rid of polyimides, baking and curing, obtain the double-sided overlay alignment symbology;
Second the step, at the another side deposit Cr/Cu of glass substrate bottom, below technology all on this face, carry out;
The 3rd step, positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplating ground loop; Positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains the photoresist figure of bonding conductor; Electroplate bonding conductor; Positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains the photoresist figure of pin; Electroplate pin; Remove photoresist, etching Cr/Cu bottom;
The 4th goes on foot, gets rid of polyimides, baking and curing; The polishing polyimides is till bonding conductor and pin exposure;
The 5th step, sputter Cr/Cu/Cr bottom; Positive-glue removing, oven dry; Double-sided overlay exposes, develops, and obtains electroplating the photoresist figure of magnetic core; Etching Cr layer; Electroplate magnetic core; Remove photoresist;
The 6th step, positive-glue removing, oven dry; Double-sided overlay exposure, development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Etching Cr layer; Electroplate bonding conductor and pin; Remove photoresist, etching Cr layer is at the bottom of the etching Cr/Cu layer;
The 7th goes on foot, gets rid of polyimides, baking and curing; The polishing polyimides is till pin and bonding conductor exposure;
The 8th step, sputter Cr/Cu bottom; Positive-glue removing, oven dry; Double-sided overlay exposure, development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin;
The 9th step, remove photoresist, etching Cr/Cu bottom, vacuum magnetic field annealing.
2, the preparation method of miniaturized fluxgate sensor according to claim 1, it is characterized in that, the described first step, be specially: the one side sputter Cr layer of the glass substrate of crossing in cleaning treatment, thickness is 100-300nm, and positive-glue removing, photoresist thickness are 5-10 μ m, the photoresist bake out temperature is 95 ℃, and the time is 30 minutes; After the substrate exposure, developing, adopt wet chemical technology etching Cr layer; Remove photoresist, get rid of polyimides and baking and curing, thickness is 3-5 μ m, obtains the double-sided overlay alignment symbology.
3, the preparation method of miniaturized fluxgate sensor according to claim 1 is characterized in that, in second step, described Cr/Cu bottom, thickness are 80-100nm.
4, the preparation method of miniaturized fluxgate sensor according to claim 1 is characterized in that, in described the 3rd step, be specially: positive-glue removing, photoresist thickness are 10-20 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; Double-sided overlay exposure, develop, obtain electroplating the photoresist figure of the bottom coil of excitation coil and receiving coil; Electroplate the bottom coil of excitation coil and receiving coil then, thickness is 10-20 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 10 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of bonding conductor; Electroplate bonding conductor, thickness is 10 μ m, and plated material is a copper; Positive-glue removing, the thickness of photoresist are 5 μ m, and the photoresist bake out temperature is 90 ℃, and the time is 30 minutes; After double-sided overlay exposure and the development, obtain the photoresist figure of pin; Electroplate pin, thickness is 10 μ m, and plated material is a copper; Remove all photoresists with acetone, with Ar plasma etch process etching Cr/Cu bottom.
5, the preparation method of miniaturized fluxgate sensor according to claim 1 is characterized in that, in described the 4th step and the 7th step, gets rid of polyimides, and thickness is 40 μ m; The baking and curing polyimides; The polishing polyimides is till bonding conductor and pin exposure.
6, the preparation method of miniaturized fluxgate sensor according to claim 1 is characterized in that, in described the 5th step, be specially: sputter Cr/Cu/Cr bottom, thickness are 20nm/150nm/30nm; Positive-glue removing, the thickness of photoresist are 10-20 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; Double-sided overlay exposes and develops, and obtains the photoresist figure of electroplated Ni Fe magnetic core; Adopt wet chemical technology etching Cr layer; Electroplated Ni Fe magnetic core, thickness are 10-20 μ m; Remove all photoresists with acetone.
7, the preparation method of miniaturized fluxgate sensor according to claim 1 is characterized in that, in described the 6th step, be specially: positive-glue removing, the thickness of photoresist are 20-30 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 90 minutes; Double-sided overlay exposure and development obtain electroplating the bonding conductor of excitation coil and receiving coil and the photoresist figure of pin; Adopt wet chemical technology etching Cr layer; Electroplate bonding conductor and pin, thickness is 20-30 μ m, and plated material is a copper; Remove photoresist with acetone, adopt wet chemical technology etching Cr layer, at the bottom of Ar plasma etch process etching Cr/Cu layer.
8, the preparation method of miniaturized fluxgate sensor according to claim 1 is characterized in that, in described the 8th step, be specially: sputter Cr/Cu bottom, thickness are 80-100nm; Positive-glue removing, photoresist thickness are 10-20 μ m, and the photoresist bake out temperature is 90-95 ℃, and the time is 60 minutes; Double-sided overlay exposure and development obtain electroplating the top layer coil of excitation coil and receiving coil and the photoresist figure of pin; Electroplating topping coil and pin, thickness are 10-20 μ m, and plated material is a copper.
9, the preparation method of miniaturized fluxgate sensor according to claim 1, it is characterized in that, described the 9th step, be specially: remove photoresist, with Ar plasma etch process etching Cr/Cu bottom, with the 250 ℃ of following magnetic-field annealings 3 hours in vacuum drying oven of the miniaturized fluxgate sensor that obtains.
10, the preparation method of miniaturized fluxgate sensor according to claim 1, it is characterized in that, described baking and curing polyimides, concrete parameter is: elder generation's low speed was kept 10 seconds for 800 rev/mins when getting rid of polyimides, kept 30 seconds for quick again 2000 rev/mins, dry then, curing process is: 120 ℃, 180 ℃, 220 ℃ each 1 hour, under 250 ℃ of argon gas atmosphere, solidified 2 hours then, cool off with stove at last.
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| CNA2009100461011A CN101481080A (en) | 2009-02-12 | 2009-02-12 | Method for manufacturing miniaturized fluxgate sensor |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102795591A (en) * | 2012-06-27 | 2012-11-28 | 西安交通大学 | Method for reducing metal secondary electron yield by utilizing regular array structure |
| CN104407113A (en) * | 2014-11-04 | 2015-03-11 | 上海交通大学 | Miniature fluxgate biosensor detecting pathogenic bacteria in foodstuff |
| CN107947846A (en) * | 2017-09-26 | 2018-04-20 | 江苏星基航讯科技发展有限公司 | Lead to all purpose aircraft mobile system and communication monitoring system of No.1 satellite based on day |
| CN111470470A (en) * | 2020-06-08 | 2020-07-31 | 宁波中车时代传感技术有限公司 | Preparation method of fluxgate chip |
| CN115248403A (en) * | 2022-06-27 | 2022-10-28 | 上海阿芮斯智能科技有限公司 | MEMS fluxgate sensor based on conical magnetic gathering device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102795591A (en) * | 2012-06-27 | 2012-11-28 | 西安交通大学 | Method for reducing metal secondary electron yield by utilizing regular array structure |
| CN102795591B (en) * | 2012-06-27 | 2015-05-27 | 西安交通大学 | Method for reducing metal secondary electron yield by utilizing regular array structure |
| CN104407113A (en) * | 2014-11-04 | 2015-03-11 | 上海交通大学 | Miniature fluxgate biosensor detecting pathogenic bacteria in foodstuff |
| CN104407113B (en) * | 2014-11-04 | 2016-09-07 | 上海交通大学 | The miniaturized fluxgate biology sensor of pathogenic bacteria detection in food |
| CN107947846A (en) * | 2017-09-26 | 2018-04-20 | 江苏星基航讯科技发展有限公司 | Lead to all purpose aircraft mobile system and communication monitoring system of No.1 satellite based on day |
| CN111470470A (en) * | 2020-06-08 | 2020-07-31 | 宁波中车时代传感技术有限公司 | Preparation method of fluxgate chip |
| WO2021248621A1 (en) * | 2020-06-08 | 2021-12-16 | 宁波中车时代传感技术有限公司 | Manufacturing method for fluxgate chip |
| CN111470470B (en) * | 2020-06-08 | 2023-03-28 | 宁波中车时代传感技术有限公司 | Preparation method of fluxgate chip |
| CN115248403A (en) * | 2022-06-27 | 2022-10-28 | 上海阿芮斯智能科技有限公司 | MEMS fluxgate sensor based on conical magnetic gathering device and manufacturing method thereof |
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