CN1014805B - Body with superhard coating - Google Patents
Body with superhard coatingInfo
- Publication number
- CN1014805B CN1014805B CN 85104959 CN85104959A CN1014805B CN 1014805 B CN1014805 B CN 1014805B CN 85104959 CN85104959 CN 85104959 CN 85104959 A CN85104959 A CN 85104959A CN 1014805 B CN1014805 B CN 1014805B
- Authority
- CN
- China
- Prior art keywords
- layer
- diamond
- metal
- settled
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 title description 2
- 238000000576 coating method Methods 0.000 title description 2
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 49
- 239000010432 diamond Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 12
- 239000010970 precious metal Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 150000004696 coordination complex Chemical class 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 17
- 239000002131 composite material Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 17
- 150000004767 nitrides Chemical class 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- -1 nitride Chemical class 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910001567 cementite Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- KSOKAHYVTMZFBJ-UHFFFAOYSA-N iron;methane Chemical compound C.[Fe].[Fe].[Fe] KSOKAHYVTMZFBJ-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000009970 fire resistant effect Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Abstract
The present invention relates to a composite device which is composed of a substrate and a surface deposition layer, the surface deposition layer is composed of one or multiple dense fine diamond particle layers, wherein the diamond particles are mutually and directly combined. The composite device has high hardness and is suitable for being used as a wearing resistance component and a knife tool, the composite device also has the advantages of good heat-conducting property and high electric insulation impedance, and the composite device can greatly absorb heat quantity in absorbing electron devices.
Description
The relevant a kind of multiple device of the present invention, this device comprises the substrate that has the surface deposition layer of being made up of one deck or the thick melee layer of multilayer, diamond particle wherein is directly articulate mutually.The characteristics of settled layer are extreme hardness, and this makes this multiple device be suitable for doing the usefulness of various wear parts and various tool.The feature of this settled layer comprises that also its heat conductivility is fabulous, and its electrical isolation impedance is high, this so that this multiple device can be widely used on electronic industry because this device can heat conduction in electronic component.
In early days, the diamond deposition layer is sintered to diamond powder on the substrate under high temperature and high pressure and obtains.The shortcoming of this method is that the selection to substrate material will be very restricted, and in fact, can only select various hard metals for use, and can not obtain the pure diamond settled layer, goes because there is a certain amount of substrate material will be penetrated in the diamond deposition layer.Another shortcoming of this method is, can only make the little part of size answer the diamond deposition layer, and being answered the size of part on all directions does not all have above 3 centimetres.
The method that known another kind of acquisition diamond is being answered layer is chemical Vapor deposition process (Chemical Vapour Deposition), is called for short CVD, uses this method can obtain having the settled layer of several micron thickness.This method has explanation in several pieces of Russian and Japanese literature, comprising for example:
1.Vapour Growth of Diamond on Diamond and Other Surfaces。
B.V.Spitsyn et al.，J.of Crystol Grouth 52（1981），219～26。
2.Growth of Diamond Particales from
Methane-Hydrogen Gas.
S.Matsumoto et al.，
J.of Materials Science
17（1982），3106～12，
3.1983 the open 58-9100 of the Japanese Patent on May 30.Matsumoto。
4.1983 the open 58-110494 of the Japanese Patent on July 1.Matsumoto。
5.1983 the open 58-135117 of the Japanese Patent on August 11.Matsumoto。
The shortcoming of this method is that the thickness of the settled layer that obtains usually can not satisfy processing requirement, and the bonding properties of settled layer and substrate material is usually very poor.
Between substrate diamond deposition layer, adopt the non-diamond key coat also well-known in the prior art.At for example JP-A-58-126972(Patent Abctract of Japan, Oct.19,1983, C-191, page1380) in, illustrated on the hard metal surface that contains one or more carbide and/or nitride to deposit carbide, nitride, oxide compound and/or boride middle layer, depositing diamond layer on the middle layer then.
Now, we accomplish, not only to certain metal, have obtained with carbon the firmly compound of height avidity being arranged as titanium, and can both obtain the firmly compound of height avidity to most of precious metals.Before depositing diamond,, just can improve bonding properties depositing some above-mentioned materials of very thin one deck on the substrate.
Interrupt the diamond deposition process with time uniformly-spaced, deposition goes up above-mentioned material layer simultaneously, just can obtain the main thick settled layer of being made up of diamond, and engaging between this settled layer and the substrate material is functional.
Should be noted that said non-diamond layer can be one deck as thin as a wafer, for example thickness is approximately 10
But the non-diamond settled layer also can be thicker, and for example thickness is up to about 10 μ m.
According to the present invention, now obtained a kind of multiple device, its composite performance is improved, and the thickness of its diamond deposition layer is thicker.
With regard to a kind of embodiment of the present invention, substrate material can comprise in the periodic table of elements carbide of metal under 4b family to the 6b family, nitride, carbonitride, the ferrous metal material combination of oxycarbide (Oxycarboni-des) and boride, these substrate materials.The carbide that this embodiment adopts comprises WC, TaC, TiC, Mo
2C, Cr
3C
2, VC, MoC or the like.Also can use carbonitride, for example (Ti, and Mo) (C, N) and oxycarbide, Ti(C for example, O).
Except salt like nitride, for example basic metal and alkaline-earth nitride are and outer, and the nitride among the present invention comprises all metal nitrides, but more favourable nitride is generally the nitride of transition metal.In general, these nitride are just as the carbide as fire-resistant mechanically resistant material, and boride and silicide are described like that.Also can use the compound of the metal nitride in the sosoloid and the compound of nitride and carbide in the present invention.The nitride that can list and the object lesson of other compounds comprise: silicon nitride, titanium nitride, zirconium nitride, vanadium nitride, chromium nitride, niobium nitride, molybdenum nitride, tantalum nitride, tungsten nitride and hafnium nitride.Boride comprises: titanium boride, zirconium boride 99.5004323A8ure, chromium boride, boronation cobalt, molybdenum boride, niobium (Nb) boride, FeB or the like.
The material that the present embodiment comprises also has cementite carbide, rapid steel, tool steel or the like.
In another embodiment of the present invention, substrate material comprises stupalith and refractory materials, BN for example, Si
3N
4, the oxide compound of the metal oxide of 4b family to 6b family and Al and Si in the periodic table of elements, SiAlON, AlON and Al
2O
3Mixture with TiC and TiN.Ceramic oxide material can comprise following compounds: SiO
2, Al
2O
3, ZrO
2, TiO
2Or the like.The available stupalith comprises the large-tonnage product from crystal form to complete glass state material among the present invention.Stupalith also comprises the non-oxidized substance material, metallic carbide for example above-mentioned, metal nitride, metal boride and metal silicide and with above-mentioned hopcalite.Used stupalith also comprises the matrix material of ceramal and pottery and metal according to the present invention.
According to another embodiment of the present invention, substrate material can comprise precious metal, and precious metal comprises Ag, Au, Pt, Pd, Ru, Os and Ir.Certainly the alloy that also comprises any ratio of these metals.Except precious metal and can comprise two kinds of precious metal or two or more metal alloys and, substrate material also can comprise other metal.Preferred metal is the metal under 1b family to 7b family and 8 families, for example can comprise Cu, Zn, Cd, Al, In, Si, Sn, Pb, Mo, W, Mn, Fe, Co, Ni or the like.
Compound body of the present invention comprises and is selected from metal, metal alloy, the hard metal complex body of melts combine, the core that the material of pottery or its mixture is made, this core to small part covers with a settled layer, comprising the sedimentary polycrystalline diamond layer of one or more layers CVD, it is characterized in that the material layer that settled layer is selected from precious metal and metal titanium with being different from substrate material combines with substrate material.
According to multiple device body of the present invention, its production process can be at the combination layer that deposits the diamond layer that a non-diamond layer becomes with chemical vapor deposition on certain substrate material.During diamond layer more than settled layer comprises one deck, wherein the sedimentary sequence of each layer can be arbitrarily.For example, can deposit one deck diamond earlier, deposit second layer non-diamond layer then, and then further deposit or include only each layer of the combination of diamond layer or diamond layer and non-diamond layer.
Diamond layer can obtain by the chemical vapor deposition method (CVD) of already known processes and with the mixture of gaseous state activation hydrocarbon and hydrogen, and this gaseous mixture is sent to the substrate material that heated and contacted.The thickness of each individual course is 0.1～10 μ m, preferably 0.2～2 μ m.When which floor settled layer comprised, according to the thickness and the number of plies of each individual course, its total thickness can reach 500 μ m or bigger.The number of plies can be two-layer or multilayer, and can comprise which floor diamond layer that is separated by non-diamond.
According to well-known chemical vapor deposition (CVD) method or known physical vapor deposition (PVD) method, just can deposit and obtain the non-diamond layer.
The device that has settled layer that obtains according to the present invention can be applied in many aspects industrial.
One of purposes is as the part that often is under the violent grinding condition, for example is squeezed into pattern, and sealing-ring and threaded sleeve, milling cutter and lathe tool or the like are used for processing metal and other material, as timber, and the cutter of plastics stampings and fibre composite.Be inlaid with the cutter of the tesserae that makes according to the present invention, its hardness and mechanical workout efficient and all improved wear-life, when which floor thin layer of diamond settled layer comprise, especially like this, because the increase of diamond deposition layer total thickness has strengthened wear resistance again effectively.
The present invention is on the jewellery industry and particularly useful in the production of watchcase or other ornament, exactly because the layer of answering of the present invention has good anticorrosive and abrasion resistance.In addition, the diamond deposition layer on the outside surface when particularly the noble metal loading layer below it combines, is the important one side that the present invention obtains widespread use.
Also can on electronic industry, be applied according to product of the present invention, because the heat conductivility of diamond deposition layer is good and (perhaps) its insulation impedance is very high.Therefore, diamond deposition layer and combining under possible condition with silver or the middle layer that makes of gold just can be used as the heat dissipation element in the semiconducter device effectively.
And the device that makes according to the present invention also can be used as the cutter that surgical operation is used.
At last, this diamond deposition layer also be used in medically or the radioscope on the nuclear energy technology on, with control radiation dose.
Following embodiment has explained the present invention in more detail, except the example 1 as a comparison.
Embodiment 1(does not belong to the present invention)
According to chemical vapor deposition of the present invention (CVD) method, at first the carbide tesserae with carburizing deposits the thick TiC layer of last 2 μ m, and then this tesserae deposition is gone up the thick diamond layer of about 2 μ m.Use physical vapor deposition (PVD, i.e. Phisical Vapour Deposition) method with the thick TiN layer of this tesserae last 2 μ m of deposition at last again.
When containing the Al alloy of Si with this tesserae processing, excellent property.
Embodiment 2
Except that following operating process and, all repeat the step of embodiment 1, said exception operation is in order to improve the bonding properties of tesserae settled layer, between TiC layer and diamond layer, to be approximately the Ti layer of 0.1 μ m with physical vapor deposition (PVD) layer thickness.
When carrying out Milling Process with the cutter that has settled layer of the present invention, just reduce the inefficacy of cutter, splendid with the effect that this multilayer settled layer reaches.
Embodiment 3
Earlier at Al
2O
3Depositing a layer thickness on the threaded sleeve of making is the Ti layer of 0.1 μ m, and then deposits the diamond layer that a layer thickness is approximately 2 μ m.Consequently be doubled wear-life.
Embodiment 4
On the copper coin that is used as radiator element in the production process of preparing at large power semiconductor device, at first use physical vapor deposition (PVD) method to deposit the Ti layer that thickness is 0.1 μ m, and then deposit the diamond layer that thickness is 5 μ m.Owing to one deck Ti middle layer has been arranged, so this settled layer combine well with copper.There is this layer diamond layer to exist, not only reached insulating property, and its heat conductivility improved also.
Embodiment 5
Except the middle layer by thickness be the gold of 1 μ m and titanium that thickness is 0.3 μ m form and, other operating process is the repetition of embodiment 8.
Embodiment 6
On Stainless Steel Watch Case, deposit the gold layer of thick 5 μ m, and then deposit the diamond layer that thickness is 2 μ m.With the table of common deposited gold by comparison, the weather resistance of this settled layer and anti-zoned broken performance are all very good.
Embodiment 7
The Ti layer and the thickness that alternately deposit thickness and be 0.1 μ m on the cementite carbide tesserae are the diamond layer of 2 μ m, reach about 100 μ m up to the total thickness of settled layer.It is functional when this tesserae is used to process sandstone.
Claims (5)
1, multiple device body, comprise and be selected from metal, metal alloy, the hard metal complex body of melts combine, the core that the material of pottery or its mixture is made, this core to small part covers with a settled layer, comprising the sedimentary polycrystalline diamond layer of one or more layers CVD, it is characterized in that the material layer that settled layer is selected from precious metal and metal titanium with being different from substrate material combines with substrate material.
2, the multiple device body of claim 1 is characterized in that settled layer comprises the precious metal middle layer between one deck diamond layer at least.
3, the multiple device body of claim 1 is characterized in that settled layer comprises the precious metal middle layer of the formed stable carbide between one deck diamond layer at least, is preferably titanium.
4, each multiple device body is characterized in that settled layer total thickness 0.1-500 μ m during aforesaid right required.
5, the multiple device body of claim 4, wherein said thickness 0.5-100 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85104959 CN1014805B (en) | 1984-06-27 | 1985-06-27 | Body with superhard coating |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8403429A SE453474B (en) | 1984-06-27 | 1984-06-27 | COMPOUND BODY COATED WITH LAYERS OF POLYCristalline DIAMANT |
| CN 85104959 CN1014805B (en) | 1984-06-27 | 1985-06-27 | Body with superhard coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85104959A CN85104959A (en) | 1987-01-07 |
| CN1014805B true CN1014805B (en) | 1991-11-20 |
Family
ID=25741823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 85104959 Expired CN1014805B (en) | 1984-06-27 | 1985-06-27 | Body with superhard coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1014805B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427807B2 (en) | 2005-02-18 | 2008-09-23 | Mitac Technology Corp. | Chip heat dissipation structure and manufacturing method |
| US7504148B2 (en) | 2005-03-03 | 2009-03-17 | Mitac Technology Corp | Printed circuit board structure and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104694893A (en) * | 2013-12-04 | 2015-06-10 | 中国科学院宁波材料技术与工程研究所 | Carbon-based antifriction wear resistant coat and production method thereof |
| WO2021056133A1 (en) * | 2019-09-23 | 2021-04-01 | 广东工业大学 | Novel ceramic-based diamond composite sheet and preparation method therefor |
-
1985
- 1985-06-27 CN CN 85104959 patent/CN1014805B/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427807B2 (en) | 2005-02-18 | 2008-09-23 | Mitac Technology Corp. | Chip heat dissipation structure and manufacturing method |
| US7504148B2 (en) | 2005-03-03 | 2009-03-17 | Mitac Technology Corp | Printed circuit board structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN85104959A (en) | 1987-01-07 |
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