CN101478018A - Preparation for flexible graphite substrate polysilicon membrane - Google Patents
Preparation for flexible graphite substrate polysilicon membrane Download PDFInfo
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- CN101478018A CN101478018A CNA200910008900XA CN200910008900A CN101478018A CN 101478018 A CN101478018 A CN 101478018A CN A200910008900X A CNA200910008900X A CN A200910008900XA CN 200910008900 A CN200910008900 A CN 200910008900A CN 101478018 A CN101478018 A CN 101478018A
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- flexible graphite
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- graphite substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a method for growing a flexible graphite/polycrystalline silicon thin film for fabricating solar battery on a flexible graphite substrate as the substrate material. The method is mainly characterized in that the flexible graphite/polycrystalline silicon thin film is fabricated on the flexible graphite substrate by chemical vapor deposition, electron beam evaporation or magnetron sputtering. The method has the advantages of simple equipment, low growth cost, reduced consumption of energy and silicon material, etc.
Description
Technical field
The invention provides a kind of can on the flexible graphite substrate, grow flexible graphite the method for polysilicon membrane, be used to make polysilicon thin-film solar battery.
Background technology
The energy is the material base that human society exists and develops.Entered since the new century and since limited traditional fossil fuel resource constantly exhausted and excessively use traditional energy and brought as environmental problems such as greenhouse effect, make human existence and development face serious threat.The development and utilization of new and renewable sources of energy has become the foundation stone that human society will be multiplied and lived future.
Solar cell is to utilize sunlight and material to interact directly to produce electric energy, is to large-scale develop and utilize one of project that attracts most attention in the solar energy.Its application can solve the problem of human social development aspect energy demand, and reduces and the relevant problem of environmental pollution of burning petrochemical industry resource.Therefore solar cell is expected to become the important new forms of energy of 21 century, and some developed countries competitively increase the input of technology and industry to capture the solar cell market that enlarges day by day.
At present, most widely used solar cell is the body crystal silicon cell.Because the reserves of silicon are the abundantest in the world, and the preparation technology of crystal-silicon solar cell is the most ripe, also simple relatively, help large-scale application.But there is following problem in traditional crystal silicon chip preparation process based on Siemens Method at present: the very power consumption of the technical process of Siemens Method reducing polysilicon; The polycrystalline silicon material that adopts Siemens Method to restore must pass through another and very just can cast the polysilicon ingot after the process of smelting technology once more of power consumption; The slicing processes of the polysilicon ingot of purchasing will be lost 1/3rd silicon materials at least.As seen, adopt Siemens's method to make polysilicon chip and both consumed energy, waste silicon materials again, directly caused the high price of polycrystalline silicon solar cell, had a strong impact on the application of polycrystalline silicon solar cell.With the silicon solar cell filming is the best method that addresses the above problem.If on substrate, grow polysilicon membrane, then can when having higher efficient and good stable, the solar cell that guarantees preparation save silicon materials greatly, reduce cost.No matter than the crystal-silicon solar cell of the costliness of traditional Siemens Method preparation, still have the lower amorphous silicon membrane battery of efficient of photic decay, the application prospect of polycrystalline silicon thin film solar cell all has remarkable advantages.
The selection of substrate is the key issue of preparation polysilicon thin-film solar battery, and the substrate that is adopted needs and can well mate with silicon materials, and is high temperature resistant, and cheap.Be used as the stainless steel that mainly contains of polysilicon thin-film solar battery substrate at present in the laboratory, glass or quartz, graphite cake and some ceramic materials etc.Wherein: there are matching problems such as thermal expansion coefficient difference in stainless steel in the deposition process of polycrystalline silicon material; There is the problem of non-refractory in glass material; And graphite cake and some ceramic material exist certain difficulty of processing problem and cost problem.This shows, select suitable backing material to become a great problem of preparation polysilicon thin-film solar battery.
Summary of the invention
The present invention adopts flexible graphite as substrate, after it is carried out certain preliminary treatment, and the preparation polysilicon thin-film solar battery.Flexible graphite has very high electrical and thermal conductivity, good chemical stability, heat shock resistance and heat-resisting quantity.Advantages such as compare with other substrate, flexible graphite has in light weight, and cost is low, and is bent in the certain angle, and the technology of purchasing is simple, and is high temperature resistant, and thermal expansion system and silicon are close are the splendid selections of polycrystalline silicon thin film solar cell backing material.
The objective of the invention is to realize by following technical scheme:
The present invention is with the backing material of flexible graphite as the preparation polysilicon membrane, provide a kind of can on the flexible graphite substrate, grow be used to make solar cell flexible graphite the method for polysilicon membrane.Its principal character is for being substrate with the flexible graphite, adopt methods such as chemical vapour deposition (CVD), electron beam evaporation or magnetron sputtering prepare flexible graphite polysilicon membrane.Advantages such as this method has that equipment is simple, growth cost is low, energy efficient and silicon materials.
Realize the best way of invention:
1. realize the capital equipment of invention:
Chemical vapour deposition reactor furnace;
Nitrogen gas generator (or nitrogen purification equipment);
Hydrogen generator (or hydrogen purification equipment);
Tail gas treatment device.
2. suitably adjust according to growth technique, and according to the individual instances of growth apparatus.
3. the purity of reacting gas should be greater than 6N.
4. temperature control precision should be better than 1K.
Use example
Growth technique:
1. the used capital equipment of growing: chemical vapour deposition reactor furnace, nitrogen gas generator (or nitrogen purification equipment), hydrogen generator (or hydrogen purification equipment), tail gas treatment device.
2. be raw material with trichlorosilane and hydrogen, control their flow by mass flowmenter.
3. flexible graphite substrate process is anticipated, in the chemical vapour deposition reactor furnace of packing into.
4. vacuumize in the chemical vapour deposition reactor furnace, treat in chemical vapour deposition reactor furnace, to lead to hydrogen again after vacuum is taken out.Can repeat so several times to reduce the residual air in the chemical vapour deposition reactor furnace.
5. with chemical vapour deposition reactor furnace heating, heating-up temperature 1273-1473K.
6. after treating temperature stabilization, feed trichlorosilane and hydrogen, following reaction takes place
7. the silicon atom successive sedimentation that generates of reaction is on the flexible graphite substrate, form flexible graphite polysilicon membrane.
8. after the growth ending, stop the trichlorosilane input, continue logical hydrogen, cooling.
9. treat that temperature drops to after the room temperature, stop the hydrogen input, fed nitrogen 1 hour.
10. close vacuum pump, treat that the pressure in the chemical vapour deposition reactor furnace is raised to after the standard atmospheric pressure, stop the nitrogen input, take out growth flexible graphite polysilicon membrane.
11. growth ending.
Growth result: according to above-mentioned growth technique successfully on the flexible graphite substrate growth 60 micron thickness polysilicon membrane, make flexible graphite polysilicon membrane.
Meaningful and the effect that has is compared in invention with background technology
The preparation method of the solar-grade polysilicon membrane sheet based on the soft graphite substrate provided by the present invention and base Conventional method in Siemens's method is compared, and has the advantages such as equipment is simple, energy consumption is low, spillage of material is few.
As the soft graphite (being also referred to as graphite paper or graphite foil) of substrate, be by with expanded natural graphite Direct weighting makes in flakes, need not any adhesive or fiberfill fibers, can realize independently continuously paillon foil. The large-scale industrial production of soft graphite can be realized at present. According to different standardization technology The soft graphite paper tinsel volume of preparation different-thickness and carbon element purity. Soft graphite has very high electrical and thermal conductivity, With good chemistry stability and heat shock resistance. It is at electromagnetic protection, and corrosion-resistant Sealing Technology is dispelled the heat etc. There is unique advantage the aspect and uses widely. Compare soft graphite with the stainless steel paillon foil of same thickness The advantages such as it is light to have weight, and cost is low, corrosion-resistant, high temperature resistant. And soft graphite and silicon have close Thermal coefficient of expansion so that soft graphite is compared metal forming with the bonding state of silicon bigger room for promotion is arranged. Adopt the solar-grade polysilicon membrane weight ratio area of the present invention's preparation greatly to increase, make the sun electricity for preparing The weight ratio power in pond increases greatly, and with low cost, and substrate is high temperature resistant, corrosion-resistant, uses more flexible.
Claims (5)
1, a kind of on the flexible graphite substrate growth flexible graphite the method for polysilicon membrane, be used to make polysilicon thin-film solar battery, it is characterized in that, be substrate with the flexible graphite, utilizes methods such as chemical vapour deposition (CVD), electron beam evaporation or magnetron sputtering to prepare polysilicon membrane.
2, the preparation method of flexible graphite substrate polysilicon membrane according to claim 1 is characterized in that: with flexible graphite (being called graphite paper or graphite foil again) is substrate.
3, the preparation method of flexible graphite substrate polysilicon membrane according to claim 1, it is characterized in that: with trichlorosilane or silane and hydrogen is raw material (purity: more than the 6N), adopts chemical vapor deposition (CVD) method preparing polysilicon film on the flexible graphite substrate.
4, the preparation method of flexible graphite substrate polysilicon membrane according to claim 1 is characterized in that: be raw material (purity: more than the 6N) with the polysilicon, adopt electron beam evaporation (EBE) method preparing polysilicon film on the flexible graphite substrate.
5, the preparation method of flexible graphite substrate polysilicon membrane according to claim 1 is characterized in that: be raw material (purity: more than the 6N) with the polysilicon, adopt magnetron sputtering (MCS) method preparing polysilicon film on the flexible graphite substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200910008900XA CN101478018A (en) | 2009-02-12 | 2009-02-12 | Preparation for flexible graphite substrate polysilicon membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200910008900XA CN101478018A (en) | 2009-02-12 | 2009-02-12 | Preparation for flexible graphite substrate polysilicon membrane |
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| Publication Number | Publication Date |
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| CN101478018A true CN101478018A (en) | 2009-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA200910008900XA Pending CN101478018A (en) | 2009-02-12 | 2009-02-12 | Preparation for flexible graphite substrate polysilicon membrane |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296133A (en) * | 2012-02-29 | 2013-09-11 | 王洪举 | Crystalline silicon battery piece with graphite substrate |
| CN104766784A (en) * | 2014-06-30 | 2015-07-08 | 常州英诺能源技术有限公司 | Method for preparing flexible polycrystalline silicon thin film through deposition based on flexible graphite paper substrate |
| CN105448707A (en) * | 2015-12-30 | 2016-03-30 | 常州英诺能源技术有限公司 | Method for preparing polycrystalline silicon thin film by using ceramic substrate |
| CN111326591A (en) * | 2018-11-29 | 2020-06-23 | 东泰高科装备科技有限公司 | Flexible solar cell and preparation method thereof |
-
2009
- 2009-02-12 CN CNA200910008900XA patent/CN101478018A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296133A (en) * | 2012-02-29 | 2013-09-11 | 王洪举 | Crystalline silicon battery piece with graphite substrate |
| CN104766784A (en) * | 2014-06-30 | 2015-07-08 | 常州英诺能源技术有限公司 | Method for preparing flexible polycrystalline silicon thin film through deposition based on flexible graphite paper substrate |
| CN105448707A (en) * | 2015-12-30 | 2016-03-30 | 常州英诺能源技术有限公司 | Method for preparing polycrystalline silicon thin film by using ceramic substrate |
| CN111326591A (en) * | 2018-11-29 | 2020-06-23 | 东泰高科装备科技有限公司 | Flexible solar cell and preparation method thereof |
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Open date: 20090708 |