CN101476960B - Method for improving overload capacity of silicon capacitive pressure transducer - Google Patents
Method for improving overload capacity of silicon capacitive pressure transducer Download PDFInfo
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- CN101476960B CN101476960B CN2009100101957A CN200910010195A CN101476960B CN 101476960 B CN101476960 B CN 101476960B CN 2009100101957 A CN2009100101957 A CN 2009100101957A CN 200910010195 A CN200910010195 A CN 200910010195A CN 101476960 B CN101476960 B CN 101476960B
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Abstract
The invention relates to a method for improving the overload capacity of a silicon capacitance pressure sensor, which is formed by combining three plates by anode bonding technology. The method is characterized in that an upper fixing electrode plate and a lower fixing electrode plate are both provided with a limit point, and overload limit is achieved through a movable electrode of a silicon central electrode plate in the middle of the two fixing electrode plates; the glass upper fixing electrode plate (13) and the lower fixing electrode plate are preserved with a limit point (8) relative tothe inside corrosion area, and a movable electrode plate (6) and the end surface of the limit point (8) are reserved with a clearance; within the measuring range working range of the sensor, the movable electrode plate (6) can not be contacted with the limit point (8); after externally applied working pressure exceeds the normal measuring range, the central movable electrode plate (6) can be contacted with the limit point (8) because of increased displacement, and at this moment, two capacitors which are positioned between the central movable electrode plate, the upper fixing electrode plate and the lower fixing electrode plate have corresponding change; the change of the two capacitors is detected through an external circuit so as to achieve the measurement of the externally-applied pressure; and if the externally-applied pressure is increased, the movable electrode plate (6) does not have displacement because of being supported against by the limit point (8), and the overload limit protection of the movable electrode plate (6) is achieved in the presence of the limit point (8). The invention adopts the method of limiting the displacement of the movable electrode plate in a capacitance electrode plate by the limit point in the lower electrode plate, thereby guaranteeing that the sensor can not be damaged during overload.
Description
Technical field
The present invention relates to the sensor manufacturing, a kind of design and implementation method that improves silicon capacitive pressure transducer overload capacity.
Background technology
Capacitor differential pressure transducer is a kind of novel differential pressure, pressure transducer, its core detection part is two different pressures conversion of signals that add each corresponding capacitance variations, the rear portion testing circuit then is converted to electric signal to changes in capacitance, this electric signal is handled to detect just can obtain the impressed pressure value.
Pressure transducer normally is operated in the range ability of regulation.But in the actual field working environment, or the actual conditions requirement of working environment, or the appearance of sensor fortuitous event when installing, may cause the plus-pressure of pressure transducer to surpass the transducer range scope.Concerning the sensor of higher range, the pressure that is subjected in the time of the pressure transducer overload is higher relatively, and this situation is harsher to the overload capacity of pressure transducer.Pressure transducer can not damage or degradation on request, and institute thinks and deals with this actual conditions, requires pressure transducer that certain anti-overload ability must be arranged.
Summary of the invention
The object of the invention provides a kind of method that improves silicon capacitive pressure transducer overload capacity, utilizes ripe silicon micro mechanical processing and corrosion technology, processes position limiting structure and realize on the fixed polar plate of glass.
The method of this raising silicon capacitive pressure transducer overload capacity, adopt anode linkage technology that the following fixed polar plate of last fixed polar plate, silicon center pole plate and the glass of glass is assembled, the upper and lower fixed polar plate relative inner corrosion region that it is characterized in that glass reserves spacing point, and is gapped between movable electrode and the spacing some end face; In the range working range of sensor, movable electrode can not run into spacing point, when adding working pressure above behind the normal range, movable electrode is because the displacement increasing, can contact with spacing point, corresponding variations take place in two electric capacity that are present in this moment between the fixing upper and lower pole plate of movable electrode and glass, detect this variation of two electric capacity by external circuit, realize external stressed measurement; If impressed pressure increases again, then movable electrode props up owing to limited point and no longer is moved, thereby the existence of spacing point has realized the overload position limitation protection to movable electrode.
The silicon capacitive pressure transducer that the present invention proposes transships spacing method for designing and structure implementation does not see open report.
When adding when overload occurring after working pressure surpasses normal range; but the present invention adopts the way of the movable plate electrode displacement in the spacing some limiting capacitance pole plate in the bottom crown; and the concentrated stress that is subjected to during the overload of the movable electrode of design silicon center pole plate can be less than the ultimate stress of silicon pole plate; thereby sensor is not by pressure damage when having guaranteed overload, satisfies the contradiction requirement of adjusting sensitivity and overload position limitation protection simultaneously.
Description of drawings
Fig. 1 silicon capacitive pressure transducer synoptic diagram of the present invention;
Fig. 2 is a sandwich construction synoptic diagram before the silicon capacitive pressure transducer assembling;
Embodiment
Silicon capacitive pressure transducer improves the method for overload capacity, adopt anode linkage technology that the following fixed polar plate of last fixed polar plate, silicon center pole plate and the glass of glass is assembled, as shown in Figure 1, it is characterized in that from top to bottom following fixed polar plate 3 for the last fixed polar plate 1 of glass, silicon center pole plate 2, glass, the last fixed polar plate 1 of glass and the following fixed polar plate of glass 3 are same structure, the metal electrode 9 of limited site 8 and bottom land in the upper and lower fixed polar plate 1,3 of glass, spacing by the realization overload of the movable electrode 6 in the silicon center pole plate 2; Act on movable electrode 6 places when adding working pressure by pilot extraction electrode hole 4, cause movable electrode 6 to issue living displacement at impressed pressure, but corresponding the variation takes place in two capacitor C 1, the C2 that are present in this moment between movable plate electrode 6 and the upper and lower fixed polar plate 1,3, detect this variation of first capacitor C 1, second capacitor C 2 by external circuit, realize external stressed measurement; In the range working range of sensor; but movable plate electrode 6 can not run into spacing point 8; when adding working pressure above behind the normal range; but center movable plate electrode 6 is because the displacement increasing; can contact with spacing point 8; if at this moment impressed pressure increases again, but then movable plate electrode 6 props up owing to limited point 8 and no longer is moved, thereby but the existence of spacing point 8 has realized the overload position limitation protection to movable plate electrode 6.
Position limiting structure: upper and lower fixed polar plate 1,3 structures of glass are identical, each relative outside surface has the penetrating electrode hole 4 of extraction electrode 5 and center, the groove that the gap 7 that the last fixed polar plate 1 of glass and the following fixed polar plate of glass 3 relative inner centers all have forms for glass pole plate corrosion back, groove internal corrosion district has outstanding spacing point 8, the bottom land that reserves that metal electrode 9 is arranged, and the degree of depth of groove then requires concrete definite according to the output sensitivity of sensor.Spacing point 8 even cloth are outside the circumference of electrode hole 4, and its upper surface and upper and lower fixed polar plate 1,3 surfaces are in same plane.
Visible silicon center pole plate 2 and in the heart movable electrode 6 wherein among Fig. 2, adopt corrosion technology with pole plate 2 two sides, silicon center symmetry thickness thinning, center after the processing promptly is a movable electrode 6, and meeting swells with pressure or caves in, and the assembling back is all gapped with the spacing point 8 of upper and lower utmost point fixed head 1,3.
Claims (4)
1. method that improves silicon capacitive pressure transducer overload capacity, adopt anode linkage technology that the following fixed polar plate of last fixed polar plate, silicon center pole plate and the glass of glass is assembled, it is characterized in that all limited site on the following fixed polar plate of the going up of glass, glass, realize that by the movable electrode that is positioned at the silicon center pole plate in the middle of two fixed polar plates overload is spacing; Following fixed polar plate (3) the relative inner corrosion region of the last fixed polar plate (1) of glass, glass reserves spacing point (8), between movable electrode (6) and spacing point (8) end face gapped (7); In the range working range of sensor, movable electrode (6) can not run into spacing point (8), when adding working pressure above behind the normal range, movable electrode (6) is because the displacement increasing, can contact with spacing point (8), be present in the last fixed polar plate (1) of movable electrode (6) and glass this moment, down variation accordingly takes place in two capacitor C 1 between the fixed polar plate (3), capacitor C 2, detects this variation of two electric capacity by external circuit, realizes external stressed measurement; If impressed pressure increases again, then movable electrode (6) since limited point (8) prop up and no longer mobile, because of the existence of spacing point (8) has realized overload position limitation protection to movable electrode (6).
2. the method for raising silicon capacitive pressure transducer overload capacity according to claim 1 is characterized in that following fixed polar plate (3) structure of the last fixed polar plate (1) of glass and glass is identical; The even cloth of outstanding spacing point (8) that reserves is outside the circumference of electrode hole (4), and following fixed polar plate (3) surface of the last fixed polar plate (1) of spacing point (8) upper surface and glass and glass is in same plane.
3. the method for raising silicon capacitive pressure transducer overload capacity according to claim 2, it is characterized in that the gap (7) that following fixed polar plate (3) the relative inner center of the last fixed polar plate (1) of glass and glass all has is the groove that glass pole plate corrosion back forms, bottom land has metal electrode (9), and the degree of depth of groove then requires concrete definite according to the output sensitivity of sensor.
4. the method for raising silicon capacitive pressure transducer overload capacity according to claim 2, there is glass extraction electrode (5) at the outside surface center that it is characterized in that the following fixed polar plate (3) of the last fixed polar plate (1) of glass and glass, and there is penetrating electrode hole (4) at extraction electrode (5) center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100101957A CN101476960B (en) | 2009-01-21 | 2009-01-21 | Method for improving overload capacity of silicon capacitive pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100101957A CN101476960B (en) | 2009-01-21 | 2009-01-21 | Method for improving overload capacity of silicon capacitive pressure transducer |
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| Publication Number | Publication Date |
|---|---|
| CN101476960A CN101476960A (en) | 2009-07-08 |
| CN101476960B true CN101476960B (en) | 2010-08-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009100101957A Expired - Fee Related CN101476960B (en) | 2009-01-21 | 2009-01-21 | Method for improving overload capacity of silicon capacitive pressure transducer |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445298B (en) * | 2011-11-25 | 2013-08-21 | 沈阳仪表科学研究院 | Method for improving overloading response speed of silicon capacitive pressure sensor |
| CN104297801A (en) * | 2014-09-24 | 2015-01-21 | 昆山腾朗电子有限公司 | Automotive sensor |
| CN104848982B (en) * | 2015-05-29 | 2018-01-19 | 歌尔股份有限公司 | Quasi- differential capacitance type MEMS pressure sensor and its manufacture method |
| CN107063527A (en) * | 2017-06-07 | 2017-08-18 | 上海洛丁森工业自动化设备有限公司 | A kind of passive and wireless multichannel pressure monitor system |
| CN107478359B (en) * | 2017-07-28 | 2019-07-19 | 佛山市川东磁电股份有限公司 | A kind of double membrane capacitance formula pressure sensors and production method |
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- 2009-01-21 CN CN2009100101957A patent/CN101476960B/en not_active Expired - Fee Related
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Address after: 110043 Beihai street, Dadong District, Shenyang, Liaoning Province, No. 242 Patentee after: SHENYANG ACADEMY OF INSTRUMENTATION SCIENCE Co.,Ltd. Address before: 110043 Beihai street, Dadong District, Shenyang, Liaoning Province, No. 242 Patentee before: Shenyang Academy of Instrumentation Science |
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Effective date of registration: 20180620 Address after: 322104 Dongyang City, Jinhua, Zhejiang province six stone street Songgang industrial function zone Patentee after: ZHEJIANG ZHONGGAN SENSOR TECHNOLOGY CO.,LTD. Address before: 110043 Beihai street, Dadong District, Shenyang, Liaoning Province, No. 242 Patentee before: SHENYANG ACADEMY OF INSTRUMENTATION SCIENCE Co.,Ltd. |
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