CN101471494B - X waveband high-gain microstrip antenna based on negative dielectric transmission line - Google Patents
X waveband high-gain microstrip antenna based on negative dielectric transmission line Download PDFInfo
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- CN101471494B CN101471494B CN2007103081636A CN200710308163A CN101471494B CN 101471494 B CN101471494 B CN 101471494B CN 2007103081636 A CN2007103081636 A CN 2007103081636A CN 200710308163 A CN200710308163 A CN 200710308163A CN 101471494 B CN101471494 B CN 101471494B
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Abstract
The invention relates to a X-band high-gain microstrip antenna based on a negative dielectric transmission line. The antenna comprises a rectangular metal patch, a microstrip feed line, an impedance matcher, a medium substrate and a grounding plate, wherein a plurality of metallized via-hole vertically penetrate the medium substrate, and both ends thereof are connected with the rectangular metal patch and the grounding plate respectively. The resonant frequency of the antenna with 1th-order resonant mode can be adjusted to X band by changing the number, the geometrical position and the arrangement manners of the metallized via-holes, and the gain can be improved by 1.56 to 3.37 dBi in comparison with the common microstrip antenna. The antenna has the advantages of high-gain radiation characteristics, compact structure and easy manufacture.
Description
Technical field the present invention relates to a kind of X-band high-gain microstrip antenna based on negative dielectric transmission line.
Background technology left-right-hand composite transmission line (composite right/left-handed transmission line) is a kind of artificial composite electromagnetic structure, is the novel transmission line structure that on the basis of normal transmission line, loads discrete series capacitance and shunt inductance simultaneously.Because the electromagnetic wave of special frequency demonstrates when in left-right-hand composite transmission line, propagating like electromagnetism characteristics such as backward wave radiation, zero transmission and dull and stereotyped focusing, this structure has produced tremendous influence in fields such as microwave circuit, communication device and precision instruments.For example; The resonance frequency that no longer is limited by antenna based on the Zero-order resonant antenna (zeroth order resonant antenna) of left-right-hand composite transmission line structure must depend on traditional rule of its physical size; Can obviously improve the gain performance of antenna through the physical size that increases antenna, and its resonance frequency remains unchanged almost.
Simultaneously; From left-right-hand composite transmission line, remove series capacitance and keep shunt inductance and obtain another kind of novel transmission line structure; This structure can realize the dielectric constant of negative value in certain frequency range, can be referred to as negative dielectric transmission line (epsilonnegative transmission line).Utilize the resonator of this transmission line structure design to take place 0 in certain frequency range ,+1 ,+multistage resonance such as 2, wherein+1 the rank mode of resonance plays an important role to the gain that improves microstrip antenna.Based on the microstrip antenna of negative dielectric transmission line structure+satisfy non-linear relation between the resonance length of the corresponding resonance frequency of 1 rank mode of resonance and antenna, and the resonance frequency and the inversely proportional relation of its resonance length of the TM10 basic mode of common micro-strip paster antenna (microstrip patch antenna) correspondence.And when the resonance frequency of antenna fixedly the time, the former radiating aperture is greater than the latter, so the former has higher yield value.The researcher adopts householder methods such as coating, photon crystal structure and coupling aperture to remedy the lower deficiency of common micro-strip paster antenna gain more at present, but huge, the complex structure of antenna volume after improving, this has greatly limited its range of application.And based on the microstrip antenna of negative dielectric transmission line when improving gain, kept compact conformation again and be easy to characteristics such as manufacturings, important use value is arranged in reality.
Summary of the invention the objective of the invention is based on the negative dielectric transmission line structure, and a kind of high-gain microstrip antenna that works in X-band is provided.Negative dielectric transmission line is made up of metallization via, rectangular metal paster, medium substrate and ground plate.The shunt inductance that the metallization via is in the transmission line structure to be loaded, the one of which end is positioned at the rectangular metal paster, and the other end is positioned at ground plate, and the rectangular metal paster is electrically connected with the ground plate realization.The metallization via of some and rectangular metal paster have been realized the high-gain performance of microstrip antenna jointly.Through changing number, geometric position and the arrangement mode of metallization via, make microstrip antenna work in X-band.At the corresponding resonance frequency place of+1 rank mode of resonance, the gain of this kind antenna can reach 8.44～9.66dBi, and the gain of the common microstrip antenna more almost equal than the resonance frequency that adopts same medium substrate design improves 1.56～3.37dBi.
Description of drawings
The structural representation of Fig. 1 institute invention antenna is an example with A-1, and wherein figure (a) is a vertical view, (b) is end view.
The return loss plot of the invention antenna A-1 of Fig. 2 institute, A-2.
The return loss plot of the invention antenna A-3 of Fig. 3 institute, A-4.
The invention antenna A-1 of Fig. 4 institute, A-2 are at E, the H surface radiation directional diagram at each self-resonant frequency place.
The invention antenna A-3 of Fig. 5 institute, A-4 are at E, the H surface radiation directional diagram at each self-resonant frequency place.
Embodiment adopts the circuit board lithographic technique, is that 1.5mm, relative dielectric constant are the one side etching rectangular metal paster 2 of 2.65 PTFE medium substrate 1 at thickness, and another side is left ground plate 3, and is as shown in Figure 1.The length and width of medium substrate 1 and ground plate 3 is all got 42.0mm, and the length and width of rectangular metal paster 2 is respectively L and W.Zinc-plated processing has been done to slow down oxidation in the surface of rectangular metal paster 2 and ground plate 3, and the metal coating thickness after the processing all is about 0.04mm.The metallization via 4 of some vertically passes medium substrate 1 and is communicated with rectangular metal paster 2 and ground plate 3.The diameter of metallization via 4 is 0.8mm, and the appended conducting metal thickness of coating of inwall is 0.1mm.Antenna adopts little band side feedback mode, connects rectangular metal paster 2 and 50 Ω microstrip feed lines 6 through λ/4 impedance matching boxs 5, to realize good impedance matching.The λ that the loads/length of 4 impedance matching boxs 5, width are respectively l
gAnd w
g, its occurrence is optimized the back repeatedly by the HFSS of high-frequency electromagnetic simulation software and is confirmed.It is that 50 Ω microstrip feed lines, 6 one ends of 4.0mm are as the coaxial feed interface that the SMA of standard (3.5mm) joint 7 is welded on width.Through changing number, geometric position and the arrangement mode of metallization via 4, obtain a series of X-band high-gain microstrip antennas.
Implementation procedure of the present invention and material property are by embodiment and description of drawings:
Embodiment one:
Adopt the circuit board lithographic technique to accomplish the making of the invention antenna A-1 of institute, it specifically prepares process such as the enforcement mode is said.In the xoy plane, suppose the rectangular metal paster of antenna A-1 to be divided into four that area equates along the x direction, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-1 rectangular metal paster is L * W=12.0 * 12.0=144.0mm
2λ/4 impedance matching boxs are of a size of l
g=4.8mm, w
g=1.8mm.The return loss plot of antenna A-1 is as shown in Figure 2, at the 9.52GHz place of microwave X frequency range resonance takes place, and resonance peak intensity is-34.53dB to satisfy the antenna job requirement well.Can know that at E, the H surface radiation directional diagram at resonance frequency place the maxgain value of antenna A-1 is 9.66dBi by antenna among Fig. 4.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-a at 9.48GHz place is merely 6.29dBi, and the invention antenna A-1 of institute is than having improved 3.37dBi.
Embodiment two:
Adopt the circuit board lithographic technique to accomplish the making of the invention antenna A-2 of institute, it specifically prepares process such as the enforcement mode is said.In the xoy plane, suppose along x, y direction the rectangular metal paster of antenna A-2 to be divided into four that area equates simultaneously, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-2 rectangular metal paster is L * W=12.6 * 13.2=166.3mm
2λ/4 impedance matching boxs are of a size of l
g=4.8mm, w
g=1.1mm.The return loss plot of antenna A-2 is as shown in Figure 2, at the 9.49GHz place of microwave X frequency range resonance takes place, and resonance peak intensity is-32.90dB to satisfy the antenna job requirement well.Can know that at E, the H surface radiation directional diagram at resonance frequency place the maxgain value of antenna A-2 is 9.45dBi by antenna among Fig. 4.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-a at 9.48GHz place is merely 6.29dBi, and the invention antenna A-2 of institute is than having improved 3.16dBi.
Embodiment three:
Adopt the circuit board lithographic technique to accomplish the making of the invention antenna A-3 of institute, it specifically prepares process such as the enforcement mode is said.In the xoy plane, suppose the rectangular metal paster of antenna A-3 to be divided into three that area equates along the x direction, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-3 rectangular metal paster is L * W=12.0 * 12.0=144.0mm
2λ/4 impedance matching boxs are of a size of l
g=5.0mm, w
g=1.5mm.The return loss plot of antenna A-3 is as shown in Figure 3, at the 9.16GHz place of microwave X frequency range resonance takes place, and resonance peak intensity is-35.67dB to satisfy the antenna job requirement well.Can know that at E, the H surface radiation directional diagram at resonance frequency place the maxgain value of antenna A-3 is 8.44dBi by antenna among Fig. 5.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-b at 9.17GHz place is merely 6.90dBi, and the invention antenna A-3 of institute is than having improved 1.54dBi.
Embodiment four:
Adopt the circuit board lithographic technique to accomplish the making of the invention antenna A-4 of institute, it specifically prepares process such as the enforcement mode is said.In the xoy plane, suppose the rectangular metal paster of antenna A-3 to be divided into three that area does not wait along the x direction, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-4 rectangular metal paster is L * W=12.0 * 12.0=144.0mm
2, suppose that three length is followed successively by 3.0,4.0 and 5.0mm along x axle forward.λ/4 impedance matching boxs are of a size of l
g=5.0mm, w
g=1.7mm.The return loss plot of antenna A-4 is as shown in Figure 3, at the 9.17GHz place of microwave X frequency range resonance takes place, and resonance peak intensity is-36.24dB to satisfy the antenna job requirement well.Can know that at E, the H surface radiation directional diagram at resonance frequency place the maxgain value of antenna A-4 is 9.46dBi by antenna among Fig. 7.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-b at 9.17GHz place is merely 6.90dBi, and the invention antenna A-4 of institute is than having improved 2.56dBi.
In sum, the X-band microstrip antenna by means of the negative dielectric transmission line structural design among the present invention has shown the high-gain performance, both can independent utility, be suitable as very much the unit of aerial array again.
Claims (4)
1. X-band high-gain microstrip antenna based on negative dielectric transmission line; This antenna comprises rectangular metal paster, 50 Ω microstrip feed lines, λ/4 impedance matching boxs, medium substrate and ground plate; Its principal character is the metallization via that between rectangular metal paster and ground plate, loads some, makes this antenna work in X-band through number, geometric position and the arrangement mode that changes the metallization via.
2. the X-band high-gain microstrip antenna based on negative dielectric transmission line according to claim 1, the diameter of the via that it is characterized in that metallizing is 0.8mm, the appended conducting metal thickness of coating of inwall is 0.1mm.
3. the X-band high-gain microstrip antenna based on negative dielectric transmission line according to claim 1, the number of the via that it is characterized in that metallizing is 3～4.
4. the X-band high-gain microstrip antenna based on negative dielectric transmission line according to claim 1 is characterized in that feeding classification adopts little band side feedback, and λ/4 impedance matching boxs are connected between rectangular metal paster and the 50 Ω feeder lines.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007103081636A CN101471494B (en) | 2007-12-28 | 2007-12-28 | X waveband high-gain microstrip antenna based on negative dielectric transmission line |
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| CN2007103081636A CN101471494B (en) | 2007-12-28 | 2007-12-28 | X waveband high-gain microstrip antenna based on negative dielectric transmission line |
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| CN101471494A CN101471494A (en) | 2009-07-01 |
| CN101471494B true CN101471494B (en) | 2012-08-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102074772B (en) * | 2011-01-07 | 2014-01-29 | 中国电子科技集团公司第十研究所 | Strip line waveguide switch |
| CN102170042A (en) * | 2011-01-26 | 2011-08-31 | 中兴通讯股份有限公司 | Micro-strip antenna and method for improving angle diversity effect |
| JP2014523163A (en) | 2011-06-23 | 2014-09-08 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Electrically small vertical split ring resonator antenna |
| TW201310766A (en) * | 2011-08-26 | 2013-03-01 | Yong-Kang Lv | Directional digital TV antenna |
| KR102056747B1 (en) * | 2013-07-16 | 2019-12-17 | 엘지이노텍 주식회사 | Ultra wide band antenna |
| CN105655716B (en) * | 2014-11-13 | 2020-06-12 | 航天信息股份有限公司 | Microstrip antenna device |
| CN107706518B (en) * | 2017-09-26 | 2019-11-15 | 北京邮电大学 | A kind of vortex electromagnetic antenna battle array of helical structure |
| CN107910638A (en) * | 2017-10-26 | 2018-04-13 | 武汉虹信通信技术有限责任公司 | Micro-strip radiating element and antenna for 5G systems |
| CN109326879B (en) * | 2018-10-30 | 2021-02-05 | 深圳Tcl新技术有限公司 | Signal transmission device and television |
| CN109411900A (en) * | 2018-12-14 | 2019-03-01 | 湖南华诺星空电子技术有限公司 | A kind of broad-band antenna for through-wall radar imaging |
| CN113587990A (en) * | 2021-07-30 | 2021-11-02 | 中北大学 | Parameter detection method, device and equipment based on microstrip antenna sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001358530A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Commun Ind Co Ltd | Circular polarization microstrip antenna |
| CN2857244Y (en) * | 2005-08-03 | 2007-01-10 | 深圳国瑞通讯有限公司 | Combined mini-band patch antenna for mobile satellite communicator |
| JP4170803B2 (en) * | 2003-03-14 | 2008-10-22 | 株式会社リコー | Image forming apparatus |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001358530A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Commun Ind Co Ltd | Circular polarization microstrip antenna |
| JP4170803B2 (en) * | 2003-03-14 | 2008-10-22 | 株式会社リコー | Image forming apparatus |
| CN2857244Y (en) * | 2005-08-03 | 2007-01-10 | 深圳国瑞通讯有限公司 | Combined mini-band patch antenna for mobile satellite communicator |
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