CN113587990A - Parameter detection method, device and equipment based on microstrip antenna sensor - Google Patents

Parameter detection method, device and equipment based on microstrip antenna sensor Download PDF

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CN113587990A
CN113587990A CN202110860958.8A CN202110860958A CN113587990A CN 113587990 A CN113587990 A CN 113587990A CN 202110860958 A CN202110860958 A CN 202110860958A CN 113587990 A CN113587990 A CN 113587990A
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frequency
microstrip antenna
antenna sensor
strain
resonant frequency
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董和磊
夏逸
谭秋林
张磊
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North University of China
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North University of China
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    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
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    • G01D21/02Measuring two or more variables by means not covered by a single other subclass

Abstract

The invention provides a parameter detection method, a device and equipment based on a microstrip antenna sensor, wherein the method comprises the following steps: acquiring a first resonant frequency and a second resonant frequency of a current microstrip antenna sensor, wherein the first resonant frequency and the second resonant frequency are respectively the current resonant frequency along the length direction and the width direction of a radiation patch of the microstrip antenna sensor; and determining the detected current temperature and current strain based on the first resonant frequency, the second resonant frequency and a preset calculation model, wherein the preset calculation model is a model describing the mapping relation between the current temperature and the current strain and the first resonant frequency and the second resonant frequency. According to the invention, the calculation model is preset to realize simultaneous measurement of temperature and strain parameters, so that the working efficiency is improved, and the problem of low working efficiency caused by the fact that the temperature and the strain cannot be detected simultaneously in the prior art is solved.

Description

Parameter detection method, device and equipment based on microstrip antenna sensor
Technical Field
The invention relates to the technical field of sensors, in particular to a parameter detection method, a parameter detection device and parameter detection equipment based on a microstrip antenna sensor.
Background
Temperature and strain are basic parameters for health monitoring of engineering structures, and a temperature strain sensor embedded in the structure can effectively detect the environment or mechanical structures in real time. Microstrip antenna sensors are widely used in engineering practice because of their small size, light weight, low manufacturing cost, easy integration, etc.
However, the conventional microstrip antenna sensor is generally single-mode sensing based on the antenna resonant frequency, and therefore, only single-parameter detection of temperature or strain is performed, and temperature and strain cannot be detected simultaneously, which results in low working efficiency.
Disclosure of Invention
The embodiment of the invention provides a parameter detection method, a parameter detection device and parameter detection equipment based on a microstrip antenna sensor, and aims to solve the problem of low working efficiency caused by the fact that the prior art cannot simultaneously detect temperature and strain.
In a first aspect, an embodiment of the present invention provides a parameter detection method based on a microstrip antenna sensor, including:
acquiring a first resonant frequency and a second resonant frequency of a current microstrip antenna sensor, wherein the first resonant frequency and the second resonant frequency are respectively the current resonant frequency along the length direction and the width direction of a radiation patch of the microstrip antenna sensor;
and determining the detected current temperature and current strain based on the first resonance frequency, the second resonance frequency and a preset calculation model, wherein the preset calculation model is a model describing the mapping relation between the current temperature and the current strain and the first resonance frequency and the second resonance frequency.
In a second aspect, an embodiment of the present invention provides a parameter detection apparatus based on a microstrip antenna sensor, including:
the antenna comprises an acquisition module, a detection module and a control module, wherein the acquisition module is used for acquiring a first resonant frequency and a second resonant frequency of a current microstrip antenna sensor, and the first resonant frequency and the second resonant frequency are respectively the current resonant frequency along the length direction and the width direction of a radiation patch of the microstrip antenna sensor;
and the processing module is used for determining the detected current temperature and current strain based on the first resonance frequency, the second resonance frequency and a preset calculation model, wherein the preset calculation model is a model for describing the mapping relation between the current temperature and the current strain and the first resonance frequency and the second resonance frequency.
In a third aspect, an embodiment of the present invention provides a microstrip antenna sensor, including:
a dielectric substrate;
the radiation patch, the impedance converter and the microstrip line are arranged on the upper surface of the dielectric substrate;
and a metal grounding plate arranged on the bottom surface of the dielectric substrate;
one end of the impedance converter is electrically connected with the radiation patch;
the other end of the impedance converter is electrically connected with the microstrip line;
the microstrip antenna sensor has two resonant frequencies during working, so that the external electronic equipment determines the detected current temperature and current strain based on the two resonant frequencies and a preset calculation model, wherein the preset calculation model is a model describing the mapping relation between the current temperature and the current strain and the first resonant frequency and the second resonant frequency.
In a fourth aspect, an embodiment of the present invention provides an electronic device, including: a memory, a transceiver, and at least one processor;
the processor, the memory and the transceiver are interconnected through a circuit;
the memory stores computer-executable instructions; the transceiver is used for receiving detection data sent by the sensor;
the at least one processor executes computer-executable instructions stored by the memory to cause the at least one processor to perform the method as set forth in the first aspect above and in various possible designs of the first aspect.
In a fifth aspect, an embodiment of the present invention provides a method for determining a solution model based on parameter detection of a microstrip antenna sensor, including:
acquiring a mapping relation between two parameters of temperature and strain and the resonant frequency of the microstrip antenna sensor in the length direction and the width direction;
and establishing a resolving model for detecting the temperature and the strain parameters based on the mapping relation.
According to the parameter detection method, device and equipment based on the microstrip antenna sensor, provided by the embodiment of the invention, through the preset calculation model, the detected current temperature and current strain can be determined based on the current first resonant frequency and the current second resonant frequency of the microstrip antenna sensor obtained through real-time measurement, namely, the simultaneous measurement of the temperature and strain parameters can be realized based on one microstrip antenna sensor, so that the working efficiency is improved, the integration and miniaturization of the temperature and strain sensor are realized, and the problem of low working efficiency caused by the fact that the temperature and strain cannot be detected simultaneously in the prior art is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic flowchart of a parameter detection method based on a microstrip antenna sensor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an exemplary structure of a microstrip antenna sensor according to an embodiment of the present invention;
fig. 3 is a schematic flowchart illustrating a parameter detection method based on a microstrip antenna sensor according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating an exemplary structure of a microstrip antenna sensor according to another embodiment of the present invention;
FIG. 5 shows a return loss S in a frequency range of 3GHz to 5GHz according to an embodiment of the present invention11A parameter variation schematic diagram;
FIG. 6 shows a microstrip antenna sensor TM according to an embodiment of the present invention10Mode resonant frequencyA frequency shift plot as a function of strain;
FIG. 7 shows a microstrip antenna sensor TM according to an embodiment of the present invention01A frequency shift plot of mode resonant frequency as a function of strain;
fig. 8 is a schematic diagram illustrating linear fitting results of normalized frequency shift amount and strain variation amount corresponding to two modes according to an embodiment of the present invention;
FIG. 9 is a TM provided in accordance with an embodiment of the present invention10A frequency shift plot of the mode resonant frequency as a function of temperature;
FIG. 10 is a TM provided in accordance with an embodiment of the present invention01A frequency shift plot of the mode resonant frequency as a function of temperature;
fig. 11 is a schematic diagram illustrating a linear fitting result of the normalized frequency shift amount and the temperature variation amount corresponding to two modes according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of a parameter detection apparatus based on a microstrip antenna sensor according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of an exemplary structure of a processing module according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
With the above figures, certain embodiments of the invention have been illustrated and described in more detail below. The drawings and the description are not intended to limit the scope of the inventive concept in any way, but rather to illustrate it by those skilled in the art with reference to specific embodiments.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms to which the present invention relates will be explained first:
HFSS tool: a High Frequency Structure Simulator is three-dimensional electromagnetic simulation software introduced by Ansoft corporation, is the first commercialized three-dimensional Structure electromagnetic field simulation software in the world, and is an industry standard for designing and analyzing three-dimensional electromagnetic fields accepted in the industry. The HFSS provides a simple and visual user design interface, a precise self-adaptive field solution device and a powerful post-processor with unprecedented electrical property analysis capability, and can calculate S parameters and full-wave electromagnetic fields of three-dimensional passive structures in any shapes. The HFSS software has powerful antenna design functions, and can calculate antenna parameters such as gain, directivity, far-field pattern profile, far-field 3D diagram and 3dB bandwidth; and (4) mapping polarization characteristics including spherical field components, circular polarization field components, Ludwig third definition field components and axial ratio. Using HFSS, one can calculate: solving basic electromagnetic field numerical value and opening boundary problem, near-far field radiation problem; port characteristic impedance (also called characteristic impedance) and transmission constant; s parameter and normalization S parameter of corresponding port impedance; and fourthly, eigenmode or resonance solution of the structure. Moreover, the Ansoft high-frequency solution composed of Ansoft HFSS and Ansoft Designer is the only high-frequency design solution based on physical prototype at present, provides a fast and accurate design means from system to circuit to component level, and covers all links of high-frequency design.
TXLINE: is a piece of software specially used for calculating the characteristic impedance of the PCB.
Origin: is a function drawing software.
The specific use of the HFSS tool, TXLINE and Origin is prior art and will not be described further herein.
Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the following examples, "plurality" means two or more unless specifically limited otherwise.
The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments. Embodiments of the present invention will be described below with reference to the accompanying drawings.
An embodiment of the invention provides a parameter detection method based on a microstrip antenna sensor, which is used for strain and temperature detection of engineering mechanical structures and the like. The main implementation of this embodiment is a parameter detection apparatus based on a microstrip antenna sensor, and the apparatus can be disposed in an electronic device, which can be any computer device that can be implemented.
As shown in fig. 1, a schematic flow chart of a parameter detection method based on a microstrip antenna sensor provided in this embodiment is shown, where the method includes:
step 101, obtaining a first resonant frequency and a second resonant frequency of a current microstrip antenna sensor, where the first resonant frequency and the second resonant frequency are current resonant frequencies along a length direction and a width direction of a radiation patch of the microstrip antenna sensor, respectively.
Specifically, as shown in fig. 2, which is a schematic structural diagram of a microstrip antenna sensor based on this embodiment, in this example, a microstrip antenna sensor 10 of the present invention includes a dielectric substrate 11, a rectangular radiation patch 12, an impedance converter 13, a microstrip line 14, and a metal ground plate 15; the dielectric substrate can be made of a Rogers RT/duroid 5880 substrate, the bottom surface of the dielectric substrate is a plane, the metal grounding plate is arranged on the bottom surface of the dielectric substrate, the metal grounding plate can be made by fully coating copper on the bottom surface of the dielectric substrate, and the upper surface of the dielectric substrate is provided with a rectangular radiation patch (radiation patch for short), an impedance converter and a microstrip line; the impedance converter is an 1/4 wavelength impedance converter, and the microstrip line is a 50 ohm microstrip line. The adopted Rogers RT/duroid 5880 material has the advantages of lowest dielectric loss, low moisture absorption rate, isotropy and minimum change of electrical property with frequency in a reinforced PTFE (polytetrafluoroethylene) material.
Because the edge of the microstrip line of the microstrip antenna sensor and the edge of the dielectric substrate are in the same plane, a side feed mode is adopted, and when the microstrip antenna sensor works, electromagnetic resonance with certain frequency can be formed between the radiation patch and the metal grounding plateThe invention relates to a vibration cavity, which can excite a radio frequency electromagnetic field to generate resonance when a microwave signal excites a microstrip antenna sensor, and the radio frequency electromagnetic field radiates outwards through a gap between the periphery of a radiation patch and a metal ground plate to form an Electromagnetic (EM) cavity radiating at a specific resonance frequency10Mode and TM01Mode, TM10The mode having a current flow along the length of the radiating patch corresponding to the resonant frequency f10(may be referred to as a first initial frequency), and TM01The mode has a current flow along the width direction of the radiating patch corresponding to the resonant frequency f01(which may be referred to as a second initial frequency) that shifts in resonant frequency when the microstrip antenna sensor is subjected to stress and temperature changes, the current microstrip antenna sensor may be measured at a first resonant frequency along the length of the radiating patch and a second resonant frequency along the width.
And 102, determining the detected current temperature and current strain based on the first resonance frequency, the second resonance frequency and a preset calculation model, wherein the preset calculation model is a model describing the mapping relation between the current temperature and the current strain and the first resonance frequency and the second resonance frequency.
Specifically, after a first resonant frequency of the microstrip antenna sensor in the length direction and a second resonant frequency of the microstrip antenna sensor in the width direction are obtained, the detected current temperature and the detected current strain can be obtained based on the first resonant frequency, the second resonant frequency and a preset calculation model.
Further, after obtaining a first resonant frequency of the microstrip antenna sensor in the length direction and a second resonant frequency of the microstrip antenna sensor in the width direction, frequency shifts of the resonant frequencies in the length direction and the width direction may be further calculated and obtained, which may be referred to as a first frequency shift amount and a second frequency shift amount, respectively, and the current temperature and strain are determined based on the first frequency shift amount and the second frequency shift amount
The preset calculation model is a model describing mapping relationships of temperature and strain with the first frequency shift amount and the second frequency shift amount obtained in advance, and the first amount of frequency shift is an offset of the first resonant frequency from the first initial frequency, the second amount of frequency shift is an offset of the second resonant frequency from the second initial frequency, therefore, the preset calculation model is also a model for describing a mapping relation between the temperature and the strain and the first resonant frequency and the second resonant frequency, the preset calculation model comprises calculation parameters obtained based on a specific structure of the microstrip antenna sensor, and the calculation parameters can be obtained through simulation specifically, wherein the calculation parameters comprise first temperature sensitivity of the microstrip antenna sensor along the length direction of the radiation patch, second temperature sensitivity along the width direction of the radiation patch, first strain sensitivity along the length direction of the radiation patch and second strain sensitivity along the width direction of the radiation patch.
And substituting the obtained calculation parameters, the first frequency shift quantity and the second frequency shift quantity into a preset calculation model to obtain the detected current temperature and the current strain.
According to the parameter detection method based on the microstrip antenna sensor, the current temperature and the current strain which are detected can be determined based on the current first resonant frequency and the current second resonant frequency of the microstrip antenna sensor which are obtained through real-time measurement through the preset calculation model, namely the simultaneous measurement of the temperature and the strain parameters can be realized based on one microstrip antenna sensor, so that the working efficiency is improved, the integration and the miniaturization of the temperature and the strain sensor are realized, and the problem of low working efficiency caused by the fact that the temperature and the strain cannot be detected simultaneously in the prior art is solved.
In order to make the technical solution of the present invention clearer, the method provided by the above embodiment is further described in an additional embodiment of the present invention.
As shown in fig. 3, an exemplary flowchart of the parameter detection method based on the microstrip antenna sensor provided in this embodiment is shown.
As an implementable manner, in order to be able to determine the current temperature and the current strain based on the first resonant frequency and the second resonant frequency, on the basis of the above embodiment, optionally, determining the detected current temperature and the current strain based on the first resonant frequency, the second resonant frequency and a preset calculation model includes:
step 1021, determining a first frequency shift amount based on the first resonant frequency and the corresponding first initial frequency; and determining a second frequency shift amount based on the second resonant frequency and the corresponding second initial frequency.
Step 1022, determining the temperature variation and the strain variation based on the first frequency shift amount, the first initial frequency, the second frequency shift amount, the second initial frequency and the pre-obtained calculation parameter.
In step 1023, a current temperature is determined based on the initial temperature and the temperature change amount, and a current strain is determined based on the initial strain and the strain change amount.
Specifically, when the microstrip antenna sensor works, two basic resonance modes TM formed by the radiation patch in the length direction and the width direction10And TM01Respectively corresponding to the first initial frequency f10And a second initial frequency f01When the microstrip antenna sensor is subjected to stress and temperature changes, the resonant frequency shifts, the shift amount of the resonant frequency is called frequency shift amount, and TM is obtained10And TM01The method comprises the steps of respectively corresponding to a first frequency shift quantity and a second frequency shift quantity, determining the first frequency shift quantity and the second frequency shift quantity through a first resonant frequency and a second resonant frequency in a width direction of a current microstrip antenna sensor obtained through measurement, specifically, the offset of the first resonant frequency relative to a first initial frequency is the first frequency shift quantity, and the offset of the second resonant frequency relative to a second initial frequency is the second frequency shift quantity, finding that a certain mapping relation exists between the temperature variation quantity and the strain variation quantity and the ratio of the frequency shift quantity and the initial frequency in two modes through a large amount of creative work, obtaining a preset calculation model through the large amount of creative work based on the mapping relation, researching an obtaining mode of corresponding calculation parameters, and after the structure of the microstrip antenna sensor is determined, carrying out simulation based on specific structural parameters to obtain the calculation parameters and storing the calculation parameters, when the microstrip antenna sensor is applied to temperature and strain measurement, the calculation parameter, the first frequency shift quantity, the second frequency shift quantity, the first initial frequency and the second initial frequency can be used for calculating to obtain the temperature variation and the strain variation, and further the obtained temperature variation, the strain variation, the initial temperature and the initial strain are used for calculating to obtain the temperature variation and the strain variationThe current temperature and the current strain are determined.
Further, a first normalized frequency shift amount may be determined based on the first frequency shift amount and the first initial frequency, a second normalized frequency shift amount may be determined based on the second frequency shift amount and the second initial frequency, and a relationship between the amount of temperature change and the amount of strain change and the first normalized frequency shift amount and the second normalized frequency shift amount may be expressed as:
Figure BDA0003189604120000081
wherein δ T represents a temperature change amount, δ εLI.e. representing the amount of strain change, K, applied along the length of the radiating patchTLAnd KTWRespectively representing a first temperature sensitivity along the length of the radiation patch and a second temperature sensitivity, K epsilon, along the width of the radiation patchLAnd K epsilonWRespectively representing a first strain sensitivity in the length direction of the radiation patch and a second strain sensitivity, δ f, in the width direction of the radiation patch10I.e. representing a first amount of frequency shift, δ f01I.e. representing a second amount of frequency shift, f10And f01Respectively representing a first initial frequency and a second initial frequency; kTL、KTW、LAnd K epsilonWFour parameters are used as resolving parameters.
Equation 1 is derived specifically by the following procedure:
based on the transmission line model, the resonant frequency of the microstrip antenna sensor can be expressed as:
Figure BDA0003189604120000082
wherein epsilonreIs the effective dielectric constant, L, of the dielectric substrateeFor the effective current length (for TM)10The mode is the length L of the radiating patch, for TM01The mode is the width W of the radiation patch), c represents the speed of light in vacuum, Δ Loc represents the linear compensation due to edge effects (which may be referred to as the run length), and fr is the corresponding harmonicFrequency of vibration (for TM)10The mode is f10For TM01The mode is f01)
By TM10By way of example, if the dielectric thickness h of the dielectric substrate is much smaller than the geometry of the radiating patch, i.e. h < W and h < L, the effective dielectric constant can be approximated approximately to the dielectric constant ε of the dielectric substraterI.e. having epsilonre≈εr. Therefore, the value of the extension length Δ L0c can be ignored. At this time TM10The primary mode resonant frequency (i.e., the length-wise resonant frequency) can be simplified as:
Figure BDA0003189604120000083
frequency shift delta f of microstrip antenna sensor10Can use dielectric substrate dielectric constant epsilonrAnd the variation of the radiating patch length L is expressed as:
Figure BDA0003189604120000084
wherein, δ εrThe variation of the dielectric constant of the dielectric substrate is shown, and delta L is the variation of the length of the radiation patch;
Figure BDA0003189604120000091
Figure BDA0003189604120000092
TM10the normalized frequency shift amount of the mode is:
Figure BDA0003189604120000093
the normalized frequency shift of the dielectric substrate is linear with temperature, and the substrate characteristic of the dielectric substrate is expressed as:
Figure BDA0003189604120000094
wherein alpha isεThe thermal coefficient is the thermal coefficient of the dielectric constant of the dielectric substrate, and after the material of the dielectric substrate is determined, the thermal coefficient is a known fixed value, wherein δ T represents the temperature variation, and δ L represents the variation of the length of the radiation patch.
The delta L can be divided into two parts, namely, the length delta L increased by the expansion of the radiation patch along with the rise of the temperatureTSecond, the length delta L increased by the change of the length of the radiation patch caused by the applied strainεThen, then
Figure BDA0003189604120000095
The concrete expression is as follows:
Figure BDA0003189604120000096
the sensitivity of the length of the radiation patch to temperature changes and the Coefficient of Thermal Expansion (CTE) alpha of the dielectric substrate along the length directionTLIn this regard, the coefficient of thermal expansion of the dielectric substrate is a fixed, known value, and therefore,
Figure BDA0003189604120000097
and can be represented as:
Figure BDA0003189604120000098
considering the mechanical strain applied along the length of the radiating patch, assume:
Figure BDA0003189604120000099
wherein, δ εLTo apply varying amounts of strain along the length of the radiating patch.
Substituting equation 10 and equation 11 into equation 9 yields:
Figure BDA00031896041200000910
substituting equation 8 and equation 12 into equation 7 yields:
Figure BDA00031896041200000911
assuming that the microstrip antenna sensor is subjected to uniaxial loading and the Poisson ratio is known as v, the width-wise resonant frequency (i.e., TM) of the radiating patch01Mode) normalized frequency shift
Figure BDA00031896041200000912
Can be derived through the same derivation process as above:
Figure BDA00031896041200000913
wherein alpha isTWThe thermal expansion coefficient of the dielectric substrate in the width direction is shown, and the other symbols are as defined above.
In summary, the linear relationship between the normalized frequency shift amount and the temperature and strain variation amounts can be expressed as:
Figure BDA0003189604120000101
Figure BDA0003189604120000102
equation 1 can be obtained from equation 16:
Figure BDA0003189604120000103
further, before determining the temperature variation amount and the strain variation amount based on the first frequency shift amount, the first initial frequency, the second frequency shift amount, the second initial frequency, and the pre-obtained calculation parameter, the method further includes:
and obtaining a resolving parameter through simulation based on the structural parameter of the microstrip antenna sensor.
Specifically, after the microstrip antenna sensor is manufactured and before the microstrip antenna sensor is put into use, corresponding calculation parameters need to be obtained, and the corresponding calculation parameters can be obtained through simulation based on the structural parameters of the microstrip antenna sensor.
For example, based on the structural parameters of the microstrip antenna sensor, a corresponding microstrip antenna sensor model may be established by using an HFSS simulation tool, and through simulation processes such as applying stress and changing ambient temperature, a plurality of sets of normalized frequency shift amounts under stress and corresponding strain variation amounts, and a plurality of sets of normalized frequency shift amounts under temperature variation and corresponding temperature variation amounts are obtained, and through linear fitting, a linear equation is fitted, so as to obtain strain sensitivities (including a first strain sensitivity and a second strain sensitivity) and temperature sensitivities (including a first temperature sensitivity and a second temperature sensitivity) corresponding to a length direction and a width direction, that is, calculation parameters are obtained.
Further, in order to obtain a microstrip antenna sensor integrating temperature and strain dual-parameter detection and ensure the accuracy of parameter detection, the method further comprises the following steps: and determining the structural parameters of the microstrip antenna sensor based on the dielectric constant, the dielectric thickness and the preset central frequency of the dielectric substrate.
Further, the structural parameters of the microstrip antenna sensor at least include: the target length and target width of the radiating patch, the target position of the feed point, the target width of the microstrip line and the target width of the impedance converter; correspondingly, determining the structural parameters of the microstrip antenna sensor based on the dielectric constant of the dielectric substrate, the dielectric thickness of the dielectric substrate and the preset central frequency, wherein the structural parameters comprise: determining a first length of a radiation patch of the microstrip antenna sensor based on the dielectric constant and the preset central frequency of the dielectric substrate, and determining a first width of the radiation patch of the microstrip antenna sensor based on the dielectric constant and the preset secondary resonant frequency of the dielectric substrate; determining a first position of a feeding point based on a preset starting point position and a preset end point position; determining a second characteristic impedance of the impedance converter based on the first position of the feed point and the first characteristic impedance of the microstrip line; determining a second width of the impedance converter and a third width of the microstrip line based on the dielectric constant of the dielectric substrate, the dielectric thickness of the dielectric substrate and the preset central frequency; optimizing by an HFSS tool based on the first length of the radiation patch, determining a fourth length of the radiation patch; optimizing by an HFSS tool based on the first position of the feed point, determining a second position of the feed point; optimizing by an HFSS tool based on the second width of the impedance converter and the third width of the microstrip line to obtain a fifth width of the impedance converter and a sixth width of the microstrip line; the fourth length and the first width of the radiation patch are respectively used as the target length and the target width of the radiation patch, the second position of the feeding point is used as the target position of the feeding point, the fifth width of the impedance converter is used as the target width of the impedance converter, and the sixth width of the microstrip line is used as the target width of the microstrip line.
In particular, the first length L of the radiating patch1And a first width W1May be determined based on the following equations 17 and 18, respectively:
Figure BDA0003189604120000111
Figure BDA0003189604120000112
where c is the speed of light in vacuum, f10I.e. the predetermined center frequency, f01In subsequent application, the preset center frequency and the preset secondary resonant frequency are used as a first initial frequency and a second initial frequency of the microstrip antenna sensor; epsilonrIs the dielectric constant of the dielectric substrate.
Equation 17 is derived by the following procedure:
considering the edge shortening effect, the length of the microstrip patch is expressed as:
Figure BDA0003189604120000113
wherein epsilonreIs the effective dielectric constant of the dielectric substrate,. DELTA.Loc is the extension length, c is the speed of light in vacuum,. epsilonreAnd Δ Loc are as follows, equation 20 and equation 21, respectively.
Figure BDA0003189604120000114
Figure BDA0003189604120000115
Wherein h is the dielectric thickness of the dielectric substrate, W is the width of the radiation patch, and the other symbols have the same meaning as the above.
If the dielectric thickness h of the dielectric substrate is much smaller than the geometrical dimensions of the radiating patch, i.e. h < W and h < L, the effective dielectric constant can be approximately approximated to the dielectric constant of the dielectric substrate, i.e. having εre≈εr. Therefore, the value of the extension length Δ Loc can be neglected, and the length of the radiation patch is reduced to:
Figure BDA0003189604120000121
the length of the radiating patch is denoted as a first length L1Equation 17 can be obtained.
The position of the feed point is the position of the connection point of the impedance converter and the radiation patch, the position of the feed point can be firstly based on a given range (namely a preset starting point position and a preset end point position), an HFSS tool is adopted for simulation analysis, the position with the minimum return loss is searched to be used as the first position of the feed point, and after the first position of the feed point is determined, the second characteristic impedance of the impedance converter can be determined based on the first position of the feed point and the first characteristic impedance of the microstrip line; the first characteristic impedance of the microstrip line is known, for example, a 50 ohm microstrip line is used; specifically, a distance z from the first position to an edge corner of the radiating patch may be determined based on the first position of the feed point, an input admittance of the microstrip antenna sensor may be determined based on the distance z, an input impedance may be determined based on the input admittance, and a second characteristic impedance of the impedance converter may be determined based on the input impedance and the first characteristic impedance of the microstrip line.
The width of the impedance converter (referred to as a second width for distinction) and the width of the microstrip line (referred to as a third width for distinction) may be determined based on the dielectric constant of the dielectric substrate, the dielectric thickness of the dielectric substrate, and a preset center frequency, the second length of the impedance converter is 1/4 operating wavelengths, specifically, TXLINE software may be used to determine the second width of the impedance converter and the third width of the microstrip line, and the third length of the microstrip line may be set according to actual requirements, for example, may be set to 10 millimeters (mm).
After the first length and the first width of the radiation patch, the first position of the feed point, the second width of the impedance converter, and the third width of the microstrip line are preliminarily determined, further optimization of the parameters is needed in order to improve the performance of the microstrip antenna sensor and the accuracy of the detection result. Specifically, based on the first length of the radiation patch, an SNLP (non-linear sequential programming algorithm) algorithm of HFSS tool is employed to make the length direction resonance frequency fall at a preset center frequency f10To the goal, i.e. get f10Corresponding return loss S11A minimum optimization to determine a fourth length of the radiating patch; excitation of TM by Parametric scan analysis (Parametric) and Optimization design function (Optimization) in HFSS based on first position of feed point01The secondary mode and impedance matching are taken as targets, an optimal solution is found for the position of a feed point of the microstrip antenna sensor, namely, the second position of the feed point is obtained, and the secondary mode TM is excited better01Mode, so that TM10And TM01Corresponding return lossS11Optimizing; and optimizing the target of impedance matching by using an SNLP algorithm of an HFSS tool based on the second width of the impedance converter and the third width of the microstrip line to obtain a fifth width of the impedance converter and a sixth width of the microstrip line.
The impedance matching is a proper matching mode between a signal source or a transmission line and a load, when the load resistance is equal to the internal resistance of the signal source, the load can obtain the maximum output power, the input impedance of the microstrip antenna sensor is matched with the microstrip line, and the impedance converter ensures the energy transfer efficiency of the microstrip antenna sensor by converting the impedance of the microstrip line into the condition of being matched with the input impedance.
The fourth length and the first width of the radiation patch are respectively used as the target length and the target width of the radiation patch, the second position of the feeding point is used as the target position of the feeding point, the fifth width of the impedance converter is used as the target width of the impedance converter, and the sixth width of the microstrip line is used as the target width of the microstrip line.
It is understood that the structural parameters of the microstrip antenna sensor may further include a target length of the impedance transformer, a target length of the microstrip line, thicknesses of the radiating patch, the impedance transformer and the microstrip line, a target length of the dielectric substrate, a target width of the dielectric substrate, a dielectric thickness of the dielectric substrate, a target length, a target width, a target thickness of the metal ground plate, and the like. The target length of the impedance converter is 1/4 working wavelength, the target length of the microstrip line can be set according to actual requirements, the thicknesses of the radiation patch, the impedance converter and the microstrip line can be set according to a preparation process, the target length, the target width and the medium thickness of the medium substrate can be set according to actual requirements, the target length and the target width of the metal grounding plate are the same as those of the medium substrate, and the target thickness of the metal grounding plate is set according to the preparation process.
Further, determining a second characteristic impedance of the impedance converter based on the first characteristic impedance of the microstrip line and the first position of the feeding point includes: determining an input admittance of the microstrip antenna sensor based on the first position of the feed point; determining an input impedance of the microstrip antenna sensor based on the input admittance; and determining a second characteristic impedance of the impedance converter according to the input impedance and the first characteristic impedance of the microstrip line.
In particular, a first distance z from a first location of the feed point to an edge corner of the radiating patch may be determined based on the first location1Based on the distance z1An input admittance of the microstrip antenna sensor is determined, an input impedance is determined based on the input admittance, and a second characteristic impedance of the impedance converter is determined based on the input impedance and the first characteristic impedance of the microstrip line.
Exemplary, input admittance Y of a microstrip antenna sensorinCan be expressed as:
Figure BDA0003189604120000131
where β is the phase constant of the dielectric substrate, G can be expressed by the following equation 24:
Figure BDA0003189604120000132
wherein I is:
Figure BDA0003189604120000133
wherein, W1I.e. the first width of the radiating patch, k is the wave number, k 2 pi/lambda, i.e. the number of full waves present over a length of 2 pi.
The input impedance Z of the microstrip antenna sensor can be determined from the input admittancein
Figure BDA0003189604120000141
According to input impedance ZinAnd a first characteristic impedance Z of the microstrip line0Determining a second characteristic impedance Z of the impedance converter2
Figure BDA0003189604120000142
In practice, the input impedance of the microstrip antenna sensor may be determined by HFSS tool simulation based on the first position of the feed point.
As another practical way, on the basis of the foregoing embodiment, optionally, the resolving the parameter includes: a first temperature sensitivity along a length direction of the radiation patch, a second temperature sensitivity along a width direction of the radiation patch, a first strain sensitivity along the length direction of the radiation patch, and a second strain sensitivity along the width direction of the radiation patch; correspondingly, on the basis of the structural parameters of the microstrip antenna sensor, calculating parameters are obtained through simulation, and the method comprises the following steps:
constructing a microstrip antenna sensor model through an HFSS tool based on the structural parameters of the microstrip antenna sensor; applying different stresses to the length direction and the width direction of the microstrip antenna sensor to obtain corresponding third frequency shift quantity, and obtaining strain sensitivity in the length direction and the width direction through fitting; and obtaining a corresponding fourth frequency shift amount by differently changing the ambient temperature, and obtaining the temperature sensitivity in the length direction and the width direction by fitting.
Specifically, based on the structural parameters of the microstrip antenna sensor, a corresponding microstrip antenna sensor model is established by using an HFSS simulation tool, and through simulation processes of applying stress, changing ambient temperature and the like, normalized frequency shift quantities and corresponding strain variation quantities under multiple groups of stress, normalized frequency shift quantities and corresponding temperature variation quantities under multiple groups of temperature variation are obtained, and through linear fitting, a linear equation is fitted, so that strain sensitivities (including a first strain sensitivity and a second strain sensitivity) and temperature sensitivities (including a first temperature sensitivity and a second temperature sensitivity) corresponding to the length direction and the width direction are obtained, that is, calculation parameters are obtained.
The micro-strip antenna sensor has simple and reasonable structure and convenient processing, can realize integration and miniaturization of temperature and strain parameter sensors, combines temperature measurement and strain measurement, realizes measurement of temperature and strain double parameters on the basis of ensuring smaller volume size and cost, reduces power consumption, and solves the problems that the prior art cannot simultaneously detect temperature and strain, and the prior temperature strain sensor has high cost, large volume, lower integration level and the like.
In order to make the process of the invention clearer, the process of the invention is described in detail below in an exemplary embodiment.
As shown in fig. 4, an exemplary structural schematic diagram of the microstrip antenna sensor provided in this embodiment is shown, in the diagram, a lateral direction to the right is a positive x-axis direction, a longitudinal direction to the up is a positive y-axis direction, a vertical x0y plane to the outside is a positive z-axis direction, a coordinate origin may be set according to actual requirements, and the structural parameters of the sensor are as shown in table 1 below as an example:
TABLE 1
Parameter(s) Length/mm Width/mm Thickness/mm
Radiation patch 21.77 28.4 0.017
Dielectric substrate 54.1 56.8 0.51
1/4 wavelength impedance transformer 11.39 0.39 0.017
50 ohm microstrip line 10 1.53 0.017
Metal grounding plate 54.1 56.8 0.017
As shown in fig. 4, the distance X0 between the feeding point and the edge corner of the radiation patch is 6.11mm, each component of the microstrip antenna sensor is a length direction along the X-axis direction, a width direction along the y-axis direction, and a thickness along the z-axis direction.
Based on the structural parameters and the feed point position in table 1, a HFSS tool is used to design a sensor and perform corresponding simulation processing, which specifically comprises the following steps:
1. firstly, a medium substrate is created, the medium substrate is represented by a rectangular parallelepiped model, the bottom surface of the model is positioned on a x0y plane, the center of the bottom surface of the model is positioned at a coordinate origin 0, and the material of the medium substrate is Rogers RT/duroid 5880.
2. Creating a rectangular radiation patch, an 1/4 wavelength impedance converter and a 50 omega microstrip line, and simultaneously carrying out merging operation to form a microstrip patch; the microstrip patch is positioned on the upper surface of the dielectric substrate; a reference ground (i.e., a metallic ground plate) is then created, the reference ground being located on the bottom surface of the dielectric substrate.
3. And creating a rectangular plane which is parallel to the yoz plane and is positioned on the same plane with the edge line of the 50 omega microstrip line and the edge of the dielectric substrate.
4. An air cavity is created to simulate the operation of the microstrip antenna sensor in real environment, the air cavity in HFSS needs to have no less than 1/4 operating wavelengths on each side from the rectangular radiating patch, 1/4 wavelengths at 4.5GHz are 17mm, the air cavity is represented by a rectangular parallelepiped model, and the bottom surface of the model is located in the xoy plane.
5. Setting boundary conditions and port excitation: firstly, setting the microstrip patch and a reference ground as ideal conductor boundary conditions; the created air cavity surface is set as a radiation boundary condition. Since the wave port excitation needs to have one face on the background face, the previously created rectangular plane is set as the wave port excitation, and the normalized impedance of the wave port is set to 50 Ω.
6. And setting frequency sweeping. Since the operating frequency of the microstrip antenna sensor is 4.5GHz, the solution frequency is set to 4.5GHz, and the maximum number of iterations is 20. Simultaneously adding 3 GHz-5 GHz sweep frequency setting, selecting a fast sweep frequency type, and then analyzing the return loss S of the microstrip antenna sensor in the 3 GHz-5 GHz frequency band11The parameter performance, as shown in FIG. 5, provides the return loss S in the frequency band of 3 GHz-5 GHz for this embodiment11The parameter change is shown schematically, wherein Freq is frequency, and S11 is return loss S11It can be seen that the microstrip antenna sensor using microstrip line feed has S frequency at the frequency point with the resonant frequency of 4.5GHz11The impedance matching is-32.9 dB, which shows that the microstrip antenna sensor has reached a good impedance matching state, and simultaneously, the feasibility of the design of the microstrip antenna sensor is also verified.
7. And simulating the change of the resonant frequency of the microstrip antenna sensor when stress is applied along the length direction of the radiation patch. The strain applied along the length direction is in direct proportion to the length of the radiation patch, so that parameter scanning setting is added, the initial length of the radiation patch of the microstrip antenna sensor is 21.77mm, the parameter scanning setting of 21.7 mm-23.7 mm is added, and the linear step length is 0.4 mm. As shown in FIG. 6, it provides the embodimentMicrostrip antenna sensor TM for supply10FIG. 7 is a frequency shift diagram of the mode resonant frequency changing with strain, which is a microstrip antenna sensor TM provided for the present embodiment01Frequency shift diagram of mode resonance Frequency changing with strain, wherein Frequency is Frequency, and S11 is return loss S11It can be seen that as the stress is continuously increased, the two resonant frequencies of the microstrip antenna sensor are gradually shifted to the left, and the magnitude of the applied stress of the microstrip antenna sensor is verified by f10And f01Is characterized by the frequency shift of (a).
8. And linearly fitting the normalized frequency shift quantity (namely the ratio of the frequency shift quantity to the initial frequency) of the resonant frequency of the microstrip antenna sensor and the strain variation quantity (namely strain) by using Origin to construct a mathematical model, and solving the first strain sensitivity along the length direction and the second strain sensitivity along the width direction. As shown in fig. 8, a schematic diagram of a linear fitting result of the normalized frequency shift amount and the strain variation amount corresponding to the two modes provided in this embodiment is shown, where δ f/f is the normalized frequency shift amount, and the fitted linear equation is y-234.69 x, y-66.69 x, that is, the first strain sensitivity is-234.69, and the second strain sensitivity is-66.69.
9. And simulating the change of the resonant frequency of the microstrip antenna sensor when the temperature of the external environment changes. The temperature is inversely related to the dielectric constant of the dielectric substrate, and the higher the temperature, the smaller the dielectric constant of the dielectric substrate. And (3) adding parameter scanning setting of dielectric constant, wherein the initial dielectric constant of the medium substrate is 2.2, adding 2-2.2 parameter scanning setting, and the linear step length is 0.02. As shown in fig. 9, the TM provided for this embodiment10Frequency shift diagram of mode resonant frequency with temperature change, as shown in FIG. 10, provides the TM for this embodiment01A frequency shift plot of the mode resonant frequency as a function of temperature; in the figure, Frequency is Frequency, and S11 is return loss S11It can be seen that the two resonant frequencies of the microstrip antenna sensor gradually shift to the right along with the continuous increase of the temperature, and f can be used for verifying the temperature of the sensor in the external environment10And f01Is characterized by the frequency shift of (a).
10. Normalizing two resonant frequencies of a microstrip antenna sensor using OriginLinearly fitting the frequency shift quantity and the temperature variation quantity, constructing a linear model, and solving a first temperature sensitivity in the length direction and a second temperature sensitivity in the width direction; as shown in fig. 11, a schematic diagram of a linear fitting result of the normalized frequency shift amount and the temperature variation amount corresponding to the two modes provided in this embodiment is provided, where δ f/f is the normalized frequency shift amount, δ T is the temperature variation amount, and TM is10Mode and TM01The equations of the modulo fitting are respectively y-163.78 x and y-171.78 x, i.e., the first temperature sensitivity is 163.78 and the second temperature sensitivity is 171.78.
The calculation parameters obtained based on the above process are shown in table 2 below:
TABLE 2
KTL 163.78
KTW 171.78
L -234.69
W -66.69
When in application, the length direction current resonance frequency (namely the first resonance frequency) f obtained based on the calculation parameters and measurement10-testWidth-wise current resonance frequency (i.e., second resonance frequency) f01-testAnd determining the current temperature T and the current strain S.
That is, the inputs to the solution model are the measured resonant frequency: current resonant frequency in the length directionf10-testWidth direction current resonant frequency f01-testThe outputs are temperature and strain. Illustratively, the solution model is as follows:
Figure BDA0003189604120000171
Figure BDA0003189604120000181
where deltaf10 is the first frequency shift amount, deltaf01 is the second frequency shift amount, deltastrain is the strain variation, deltaT is the temperature variation, the initial temperature is 23, and the initial strain is 0.
It should be noted that the respective implementable modes in the embodiment may be implemented individually, or may be implemented in combination in any combination without conflict, and the present invention is not limited thereto.
According to the parameter detection method based on the microstrip antenna sensor, the pre-obtained resolving parameters are combined with the preset resolving model, so that the current temperature and the current strain of the structure to be detected can be accurately, conveniently and simultaneously obtained based on the first resonant frequency and the second resonant frequency obtained through measurement, and the working efficiency is further improved; because the temperature and strain double-parameter measurement can be realized based on one microstrip antenna sensor, the power consumption can be effectively reduced, the cost is saved, the occupied space of the sensor is reduced, and the performance of the structure to be measured is improved.
Still another embodiment of the present invention provides a parameter detection apparatus based on a microstrip antenna sensor, for performing the method of the above embodiment.
As shown in fig. 12, a schematic structural diagram of the parameter detection apparatus based on the microstrip antenna sensor provided in this embodiment is shown. The device 30 comprises: an acquisition module 31 and a processing module 32.
The device comprises an acquisition module, a detection module and a control module, wherein the acquisition module is used for acquiring a first resonant frequency and a second resonant frequency of the current microstrip antenna sensor, and the first resonant frequency and the second resonant frequency are respectively the current resonant frequency along the length direction and the width direction of a radiation patch of the microstrip antenna sensor; and the processing module is used for determining the detected current temperature and current strain based on the first resonant frequency, the second resonant frequency and a preset calculation model, and the preset calculation model is a model for describing the mapping relation between the current temperature and the current strain and the first resonant frequency and the second resonant frequency.
Specifically, the change information of the structure to be detected, which is affected by stress and/or temperature, is sent to the external device through the microstrip antenna sensor, an acquisition module of the device acquires a first resonant frequency of the current microstrip antenna sensor in the length direction and a second resonant frequency of the current microstrip antenna sensor in the width direction based on detection data of the sensor, and sends the first resonant frequency and the second resonant frequency to a processing module, and the processing module determines the detected current temperature and current strain based on the first resonant frequency, the second resonant frequency and a preset resolving model.
The specific manner in which each module performs the operation has been described in detail in the embodiment of the method, and the same technical effect can be achieved, and will not be described in detail herein.
In order to make the device of the present invention clearer, the device provided by the above embodiment is further described in an additional embodiment of the present invention.
As shown in fig. 13, an exemplary structural diagram of the processing module provided in this embodiment is shown.
As a practical way, on the basis of the above embodiment, optionally, the processing module includes a first determining sub-module 321, a second determining sub-module 322 and a third determining sub-module 323.
The first determining submodule is used for determining a first frequency shift quantity based on the first resonant frequency and the corresponding first initial frequency, and determining a second frequency shift quantity based on the second resonant frequency and the corresponding second initial frequency; the second determining submodule is used for determining the temperature variation and the strain variation based on the first frequency shift quantity, the first initial frequency, the second frequency shift quantity, the second initial frequency and a pre-obtained resolving parameter; and the third determining submodule is used for determining the current temperature based on the initial temperature and the temperature change and determining the current strain based on the initial strain and the strain change.
Specifically, the first determining submodule determines a first frequency shift amount based on the first resonant frequency and a corresponding first initial frequency, determines a second frequency shift amount based on the second resonant frequency and a corresponding second initial frequency, and sends the first frequency shift amount and the second frequency shift amount to the second determining submodule; the second determining submodule determines temperature variation and strain variation based on the first frequency shift quantity, the first initial frequency, the second frequency shift quantity, the second initial frequency and a pre-obtained resolving parameter, and sends the temperature variation and the strain variation to a third determining submodule; the third determination submodule determines a current temperature based on the initial temperature and the amount of temperature change, and determines a current strain based on the initial strain and the amount of strain change.
Further, the processing module further includes an obtaining sub-module 324, where the obtaining sub-module is configured to obtain a resolving parameter through simulation based on the structural parameter of the microstrip antenna sensor.
Specifically, the structural parameters of the microstrip antenna sensor may be obtained in advance and stored in a preset area, or may be obtained in advance and input in real time through a terminal when simulation is needed, correspondingly, the obtaining submodule may obtain the structural parameters of the microstrip antenna sensor from the preset area, or may receive the structural parameters from the terminal in real time, and obtain the resolving parameters through simulation based on the structural parameters of the microstrip antenna sensor, the obtaining submodule may store the resolving parameters, the second determining submodule is obtained from a corresponding storage area when usage is needed, and the obtaining submodule may also send the resolving parameters to the second determining submodule for use.
Further, the processing module further includes a fourth determination submodule 325, and the fourth determination submodule is configured to determine a structural parameter of the microstrip antenna sensor based on the dielectric constant, the dielectric thickness, and the preset center frequency of the dielectric substrate.
Specifically, the dielectric constant, the dielectric thickness and the preset center frequency of the dielectric substrate may be preconfigured to the electronic device, or may be sent to the electronic device through the terminal in real time, and when the structural parameters of the microstrip antenna sensor need to be determined, the fourth determining submodule may obtain the corresponding configuration parameters, and further determine the structural parameters of the microstrip antenna sensor based on the dielectric constant, the dielectric thickness and the preset center frequency of the dielectric substrate, and store the structural parameters, or may send the structural parameters to the obtaining submodule, so as to obtain the resolving parameters.
Further, the structural parameters of the microstrip antenna sensor at least include: the target length and target width of the radiating patch, the target position of the feed point, the target width of the microstrip line and the target width of the impedance converter; a fourth determination submodule, configured to: determining a first length of a radiation patch of the microstrip antenna sensor based on the dielectric constant and the preset central frequency of the dielectric substrate, and determining a first width of the radiation patch of the microstrip antenna sensor based on the dielectric constant and the preset secondary resonant frequency of the dielectric substrate; determining a first position of a feeding point based on a preset starting point position and a preset end point position; determining a second characteristic impedance of the impedance converter based on the first position of the feed point and the first characteristic impedance of the microstrip line; determining a second width of the impedance converter and a third width of the microstrip line based on the dielectric constant of the dielectric substrate, the dielectric thickness of the dielectric substrate and the preset central frequency; optimizing by an HFSS tool based on the first length of the radiation patch, determining a fourth length of the radiation patch; optimizing by an HFSS tool based on the first position of the feed point, determining a second position of the feed point; optimizing by an HFSS tool based on the second width of the impedance converter and the third width of the microstrip line to obtain a fifth width of the impedance converter and a sixth width of the microstrip line; the fourth length and the first width of the radiation patch are respectively used as the target length and the target width of the radiation patch, the second position of the feeding point is used as the target position of the feeding point, the fifth width of the impedance converter is used as the target width of the impedance converter, and the sixth width of the microstrip line is used as the target width of the microstrip line.
Further, the fourth determining submodule is specifically configured to: determining an input admittance of the microstrip antenna sensor based on the first position of the feed point; determining an input impedance of the microstrip antenna sensor based on the input admittance; and determining a second characteristic impedance of the impedance converter according to the input impedance and the first characteristic impedance of the microstrip line.
As another implementable manner, optionally, the resolving the parameter includes: a first temperature sensitivity along a length direction of the radiation patch, a second temperature sensitivity along a width direction of the radiation patch, a first strain sensitivity along the length direction of the radiation patch, and a second strain sensitivity along the width direction of the radiation patch; correspondingly, the obtaining submodule is specifically configured to: constructing a microstrip antenna sensor model through an HFSS tool based on the structural parameters of the microstrip antenna sensor; applying different stresses to the length direction and the width direction of the microstrip antenna sensor to obtain corresponding third frequency shift quantity, and obtaining strain sensitivity in the length direction and the width direction through fitting; and obtaining a corresponding fourth frequency shift amount by differently changing the ambient temperature, and obtaining the temperature sensitivity in the length direction and the width direction by fitting.
It should be noted that the respective implementable modes in the embodiment may be implemented individually, or may be implemented in combination in any combination without conflict, and the present invention is not limited thereto.
The specific manner in which each module performs the operation has been described in detail in the embodiment of the method, and the same technical effect can be achieved, and will not be described in detail herein.
Another embodiment of the present invention provides a method for determining a solution model for parameter detection, where the method includes:
acquiring a mapping relation between two parameters of temperature and strain and the resonant frequency of the microstrip antenna sensor in the length direction and the width direction; and establishing a resolving model for detecting the temperature and the strain parameters based on the mapping relation.
Specifically, the derivation process of the embodiment is referred to for obtaining the mapping relationship between the temperature and the variable quantity parameter and the resonant frequency in the length direction and the resonant frequency in the width direction, and specifically, the derivation process of formula 1 is referred to from formula 2 to formula 16, which is not described in detail again; the established solution model has also been described in detail in the above embodiments, and is not described herein again. The obtained calculation model can be stored as a preset calculation model corresponding to the microstrip antenna sensor and used for calculating the temperature strain double parameters of various structures to be measured, so that the simultaneous measurement of the temperature and the strain double parameters is realized, and the working efficiency is improved.
As for the method in the embodiment, the specific manner in which each step performs the operation has been described in detail in the embodiment related to the method, and the same technical effect can be achieved, and will not be described in detail herein.
Another embodiment of the present invention provides a microstrip antenna sensor for detecting temperature and strain parameters of a structure to be detected.
Structure of the microstrip antenna sensor referring to fig. 2, the microstrip antenna sensor 10 includes a dielectric substrate 11, a radiation patch 12, an impedance converter 13, a microstrip line 14, and a metal ground plate 15; the dielectric substrate can be made of a Rogers RT/duroid 5880 substrate, the bottom surface of the dielectric substrate is a plane, the metal grounding plate is arranged on the bottom surface of the dielectric substrate, the metal grounding plate can be made by fully coating copper on the bottom surface of the dielectric substrate, and the upper surface of the dielectric substrate is provided with a rectangular radiation patch (radiation patch for short), an impedance converter and a microstrip line; the impedance converter is an 1/4 wavelength impedance converter, and the microstrip line is a 50 ohm microstrip line. The adopted Rogers RT/duroid 5880 material has the advantages of lowest dielectric loss, low moisture absorption rate, isotropy and minimum change of electrical property with frequency in a reinforced PTFE (polytetrafluoroethylene) material.
It should be noted that, the specific structure and the working principle of the microstrip antenna sensor provided in this embodiment have been described in detail in the foregoing method embodiments, and are not described herein again.
The microstrip antenna sensor that this embodiment provided, simple structure, the processing of being convenient for has realized temperature, strain parameter sensor's integration, miniaturization, on the basis of guaranteeing less volume size and cost, realizes the detection of temperature, the double parameter that meets an emergency, effectively reduces the consumption, solves current microstrip antenna sensor can't detect the temperature simultaneously and meet an emergency, and with high costs, bulky, the low scheduling problem of integration.
Still another embodiment of the present invention provides an electronic device, configured to perform the method provided by the foregoing embodiment. The electronic device may be a server or other implementable computer device.
As shown in fig. 14, is a schematic structural diagram of the electronic device provided in this embodiment. The electronic device 50 includes: memory 51, transceiver 52, and at least one processor 53.
The processor, the memory and the transceiver are interconnected through a circuit; the memory stores computer-executable instructions; the transceiver is used for receiving the detection data sent by the sensor; the at least one processor executes computer-executable instructions stored by the memory to cause the at least one processor to perform a method as provided by any of the embodiments above.
Specifically, the bottom surface of the microstrip antenna sensor is attached to the surface of the structure to be detected, and is used for detecting the temperature and the strain of the structure to be detected, when the structure to be detected changes under the influence of stress and/or temperature, the change information of the structure to be detected is converted into a corresponding electric signal through the microstrip antenna sensor, the electric signal is used as detection data and is sent to the external electronic equipment, the electronic equipment receives the detection data and then sends the detection data to the processor, and the processor reads and executes a computer execution instruction stored in the memory, so that the method provided by any one of the above embodiments is realized.
The microstrip antenna sensor and the electronic equipment provided by the invention can be applied to health monitoring scenes of any engineering structure or environment, such as temperature and strain parameter detection of large-scale complex engineering structures, such as large-scale aircrafts, super-large bridges, super high-rise buildings, hydraulic engineering, ocean platform structures, nuclear power station buildings and other related structures.
It should be noted that the electronic device of this embodiment can implement the method provided in any of the above embodiments, and can achieve the same technical effect, which is not described herein again.
Yet another embodiment of the present invention provides a computer-readable storage medium, in which computer-executable instructions are stored, and when the processor executes the computer-executable instructions, the method provided in any one of the above embodiments is implemented.
In some embodiments, a parameter detection system may be further provided, where the parameter detection system includes an electronic device and at least one microstrip antenna sensor, each microstrip antenna sensor may be disposed in a corresponding area of each structure to be detected according to an actual requirement, and is configured to detect change information of the structure to be detected, form detection data and send the detection data to the electronic device, the electronic device determines a current temperature and a current strain to be detected based on the detection data, the electronic device may further display the current temperature and the current strain to be detected, may further analyze the current temperature and the current strain based on a preset condition, and may send an alarm to remind a relevant manager when the current temperature and the current strain exceed a preset threshold, which may be specifically set according to the actual requirement.
It should be noted that the computer-readable storage medium of this embodiment can implement the method provided in any of the above embodiments, and can achieve the same technical effects, which are not described herein again.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (10)

1. A parameter detection method based on a microstrip antenna sensor is characterized by comprising the following steps:
acquiring a first resonant frequency and a second resonant frequency of a current microstrip antenna sensor, wherein the first resonant frequency and the second resonant frequency are respectively the current resonant frequency along the length direction and the width direction of a radiation patch of the microstrip antenna sensor;
and determining the detected current temperature and current strain based on the first resonance frequency, the second resonance frequency and a preset calculation model, wherein the preset calculation model is a model describing the mapping relation between the current temperature and the current strain and the first resonance frequency and the second resonance frequency.
2. The method of claim 1, wherein determining the current temperature and the current strain detected based on the first resonant frequency, the second resonant frequency, and a preset calculation model comprises:
determining a first frequency shift amount based on the first resonant frequency and a corresponding first initial frequency; determining a second frequency shift amount based on the second resonant frequency and a corresponding second initial frequency;
determining temperature variation and strain variation based on the first frequency shift amount, the first initial frequency, the second frequency shift amount, the second initial frequency and a pre-obtained resolving parameter;
a current temperature is determined based on an initial temperature and the amount of temperature change, and a current strain is determined based on an initial strain and the amount of strain change.
3. The method according to claim 2, wherein before determining the temperature change amount and the strain change amount based on the first frequency shift amount, the first initial frequency, the second frequency shift amount, the second initial frequency, and a pre-obtained solution parameter, the method further comprises:
and obtaining the resolving parameters through simulation based on the structural parameters of the microstrip antenna sensor.
4. The method of claim 3, further comprising:
and determining the structural parameters of the microstrip antenna sensor based on the dielectric constant, the dielectric thickness and the preset central frequency of the dielectric substrate.
5. The method according to claim 4, characterized in that the structural parameters of the microstrip antenna sensor comprise at least: the target length and target width of the radiating patch, the target position of the feed point, the target width of the microstrip line and the target width of the impedance converter;
the determining of the structural parameters of the microstrip antenna sensor based on the dielectric constant of the dielectric substrate, the dielectric thickness of the dielectric substrate and the preset central frequency comprises the following steps:
determining a first length of a radiation patch of the microstrip antenna sensor based on the dielectric constant of the dielectric substrate and the preset central frequency, and determining a first width of the radiation patch of the microstrip antenna sensor based on the dielectric constant of the dielectric substrate and the preset secondary resonant frequency;
determining a first position of a feeding point based on a preset starting point position and a preset end point position;
determining a second characteristic impedance of the impedance converter based on the first position of the feed point and the first characteristic impedance of the microstrip line;
determining a second width of the impedance converter and a third width of the microstrip line based on the dielectric constant of the dielectric substrate, the dielectric thickness of the dielectric substrate and the preset central frequency;
optimizing by an HFSS tool based on the first length of the radiation patch, determining a fourth length of the radiation patch;
determining a second position of the feeding point by optimization through an HFSS tool based on the first position of the feeding point;
optimizing by an HFSS tool based on the second width of the impedance converter and the third width of the microstrip line to obtain a fifth width of the impedance converter and a sixth width of the microstrip line;
and respectively taking the fourth length and the first width of the radiation patch as the target length and the target width of the radiation patch, taking the second position of the feeding point as the target position of the feeding point, taking the fifth width of the impedance converter as the target width of the impedance converter, and taking the sixth width of the microstrip line as the target width of the microstrip line.
6. The method according to any one of claims 3-5, wherein the resolving parameters include: a first temperature sensitivity along a length direction of the radiation patch, a second temperature sensitivity along a width direction of the radiation patch, a first strain sensitivity along the length direction of the radiation patch, and a second strain sensitivity along the width direction of the radiation patch;
the obtaining of the resolving parameter through simulation based on the structural parameter of the microstrip antenna sensor comprises:
constructing a microstrip antenna sensor model through an HFSS tool based on the structural parameters of the microstrip antenna sensor;
applying different stresses to the length direction and the width direction of the microstrip antenna sensor to obtain corresponding third frequency shift quantity, and obtaining strain sensitivity in the length direction and the width direction through fitting;
and obtaining a corresponding fourth frequency shift amount by differently changing the ambient temperature, and obtaining the temperature sensitivity in the length direction and the width direction by fitting.
7. A parameter detection device based on a microstrip antenna sensor is characterized by comprising:
the antenna comprises an acquisition module, a detection module and a control module, wherein the acquisition module is used for acquiring a first resonant frequency and a second resonant frequency of a current microstrip antenna sensor, and the first resonant frequency and the second resonant frequency are respectively the current resonant frequency along the length direction and the width direction of a radiation patch of the microstrip antenna sensor;
and the processing module is used for determining the detected current temperature and current strain based on the first resonance frequency, the second resonance frequency and a preset calculation model, wherein the preset calculation model is a model for describing the mapping relation between the current temperature and the current strain and the first resonance frequency and the second resonance frequency.
8. A microstrip antenna sensor, comprising:
a dielectric substrate;
the radiation patch, the impedance converter and the microstrip line are arranged on the upper surface of the dielectric substrate;
and a metal grounding plate arranged on the bottom surface of the dielectric substrate;
one end of the impedance converter is electrically connected with the radiation patch;
the other end of the impedance converter is electrically connected with the microstrip line;
the microstrip antenna sensor has two resonant frequencies during working, so that the external electronic equipment determines the detected current temperature and current strain based on the two resonant frequencies and a preset calculation model, wherein the preset calculation model is a model describing the mapping relation between the current temperature and the current strain and the first resonant frequency and the second resonant frequency.
9. An electronic device, comprising: a memory, a transceiver, and at least one processor;
the processor, the memory and the transceiver are interconnected through a circuit;
the memory stores computer-executable instructions; the transceiver is used for receiving the detection data sent by the microstrip antenna sensor;
the at least one processor executing the computer-executable instructions stored by the memory causes the at least one processor to perform the method of any one of claims 1-6.
10. A determination method of a calculation model based on parameter detection of a microstrip antenna sensor is characterized by comprising the following steps:
acquiring a mapping relation between two parameters of temperature and strain and the resonant frequency of the microstrip antenna sensor in the length direction and the width direction;
and establishing a resolving model for detecting the temperature and the strain parameters based on the mapping relation.
CN202110860958.8A 2021-07-30 2021-07-30 Parameter detection method, device and equipment based on microstrip antenna sensor Pending CN113587990A (en)

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