CN101471494A - X waveband high-gain microstrip antenna based on negative dielectric transmission line - Google Patents
X waveband high-gain microstrip antenna based on negative dielectric transmission line Download PDFInfo
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- CN101471494A CN101471494A CNA2007103081636A CN200710308163A CN101471494A CN 101471494 A CN101471494 A CN 101471494A CN A2007103081636 A CNA2007103081636 A CN A2007103081636A CN 200710308163 A CN200710308163 A CN 200710308163A CN 101471494 A CN101471494 A CN 101471494A
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Abstract
The invention relates to a X-band high-gain microstrip antenna based on a negative dielectric transmission line. The antenna comprises a rectangular metal patch, a microstrip feed line, an impedance matcher, a medium substrate and a grounding plate, wherein a plurality of metallized via-hole vertically penetrate the medium substrate, and both ends thereof are connected with the rectangular metal patch and the grounding plate respectively. The resonant frequency of the antenna with 1th-order resonant mode can be adjusted to X band by changing the number, the geometrical position and the arrangement manners of the metallized via-holes, and the gain can be improved by 1.56 to 3.37 dBi in comparison with the common microstrip antenna. The antenna has the advantages of high-gain radiation characteristics, compact structure and easy manufacture.
Description
Technical field the present invention relates to a kind of X-band high-gain microstrip antenna based on negative dielectric transmission line.
Background technology left-right-hand composite transmission line (composite right/left-handed transmission line) is a kind of artificial composite electromagnetic structure, is the novel transmission line structure that loads discrete series capacitance and shunt inductance on the basis of normal transmission line simultaneously.Because the electromagnetic wave of special frequency channel presents when propagating in left-right-hand composite transmission line as electromagnetism characteristics such as backward wave radiation, zero transmission and dull and stereotyped focusing, this structure has produced tremendous influence in fields such as microwave circuit, communication device and precision instruments.For example, the resonance frequency that no longer is limited by antenna based on the Zero-order resonant antenna (zeroth order resonant antenna) of left-right-hand composite transmission line structure must depend on traditional rule of its physical size, can obviously improve the gain performance of antenna by the physical size that increases antenna, and its resonance frequency remains unchanged almost.
Simultaneously, from left-right-hand composite transmission line, remove series capacitance and keep shunt inductance and obtain another kind of novel transmission line structure, this structure can realize the dielectric constant of negative value in certain frequency range, can be referred to as negative dielectric transmission line (epsilonnegative transmission line).Utilize the resonator of this transmission line structure design to take place 0 in certain frequency range ,+1 ,+multistage resonance such as 2, wherein+1 the rank mode of resonance plays an important role to the gain that improves microstrip antenna.Based on the microstrip antenna of negative dielectric transmission line structure+satisfy non-linear relation between the resonance frequency of 1 rank mode of resonance correspondence and the resonance length of antenna, and the TM of common micro-strip paster antenna (microstrip patch antenna)
10The resonance frequency of basic mode correspondence and the inversely proportional relation of its resonance length.And when the resonance frequency of antenna fixedly the time, the former radiating aperture is greater than the latter, so the former has higher yield value.The researcher adopts householder methods such as coating, photon crystal structure and coupling aperture to remedy the lower deficiency of common micro-strip paster antenna gain more at present, but huge, the complex structure of antenna volume after improving, this has greatly limited its range of application.And based on the microstrip antenna of negative dielectric transmission line when improving gain, kept compact conformation again and be easy to characteristics such as manufacturings, important use value is arranged in practice.
Summary of the invention the objective of the invention is based on the negative dielectric transmission line structure, and a kind of high-gain microstrip antenna that works in X-band is provided.Negative dielectric transmission line is made up of metallization via, rectangular metal paster, medium substrate and ground plate.The shunt inductance that the metallization via is in the transmission line structure to be loaded, the one end is positioned at the rectangular metal paster, and the other end is positioned at ground plate, and the rectangular metal paster is electrically connected with the ground plate realization.The metallization via of some and rectangular metal paster have been realized the high-gain performance of microstrip antenna jointly.By changing number, geometric position and the arrangement mode of metallization via, make microstrip antenna work in X-band.At the resonance frequency place of+1 rank mode of resonance correspondence, the gain of this kind antenna can reach 8.44～9.66dBi, and the gain of the common microstrip antenna more almost equal than the resonance frequency that adopts same medium substrate design improves 1.56～3.37dBi.
Description of drawings
The structural representation of Fig. 1 institute invention antenna is an example with A-1, and wherein figure (a) is a vertical view, (b) is end view.
The return loss plot of the invention antenna A-1 of Fig. 2 institute, A-2.
The return loss plot of the invention antenna A-3 of Fig. 3 institute, A-4.
The invention antenna A-1 of Fig. 4 institute, A-2 are at E, the H surface radiation directional diagram at each self-resonant frequency place.
The invention antenna A-3 of Fig. 5 institute, A-4 are at E, the H surface radiation directional diagram at each self-resonant frequency place.
Embodiment adopts the circuit board lithographic technique, is that 1.5mm, relative dielectric constant are the one side etching rectangular metal paster 2 of 2.65 PTFE medium substrate 1 at thickness, and another side is left ground plate 3, as shown in Figure 1.The length and width of medium substrate 1 and ground plate 3 is all got 42.0mm, and the length and width of rectangular metal paster 2 is respectively L and W.Zinc-plated processing has been done to slow down oxidation in the surface of rectangular metal paster 2 and ground plate 3, and the metal coating thickness after the processing all is about 0.04mm.The metallization via 4 of some vertically passes medium substrate 1 and is communicated with rectangular metal paster 2 and ground plate 3.The diameter of metallization via 4 is 0.8mm, and the appended conducting metal thickness of coating of inwall is 0.1mm.Antenna adopts little band side feedback mode, connects rectangular metal paster 2 and 50 Ω microstrip feed lines 6 by λ/4 impedance matching boxs 5, to realize good impedance matching.The λ that the loads/length of 4 impedance matching boxs 5, width are respectively l
gAnd w
g, its occurrence is optimized the back repeatedly by the HFSS of high-frequency electromagnetic simulation software and is determined.It is that 50 Ω microstrip feed lines, 6 one ends of 4.0mm are as the coaxial feed interface that the SMA of standard (3.5mm) joint 7 is welded on width.By changing number, geometric position and the arrangement mode of metallization via 4, obtain a series of X-band high-gain microstrip antennas.
Implementation procedure of the present invention and material property are by embodiment and description of drawings:
Embodiment one:
Adopt the circuit board lithographic technique to finish the making of the invention antenna A-1 of institute, its concrete preparation process is as described in the enforcement mode.In the xoy plane, suppose the rectangular metal paster of antenna A-1 to be divided into four that area equates along the x direction, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-1 rectangular metal paster is L * W=12.0 * 12.0=144.0mm
2λ/4 impedance matching boxs are of a size of l
g=4.8mm, w
g=1.8mm.Resonance takes place at the 9.52GHz place of microwave X frequency range in the return loss plot of antenna A-1 as shown in Figure 2, and resonance peak intensity is-34.53dB to satisfy the antenna job requirement well.By antenna among Fig. 4 at the E at resonance frequency place, H surface radiation directional diagram as can be known, the maxgain value of antenna A-1 is 9.66dBi.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-a at 9.48GHz place only is 6.29dBi, and the invention antenna A-1 of institute is than having improved 3.37dBi.
Embodiment two:
Adopt the circuit board lithographic technique to finish the making of the invention antenna A-2 of institute, its concrete preparation process is as described in the enforcement mode.In the xoy plane, suppose along x, y direction the rectangular metal paster of antenna A-2 to be divided into four that area equates simultaneously, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-2 rectangular metal paster is L * W=12.6 * 13.2=166.3mm
2λ/4 impedance matching boxs are of a size of l
g=4.8mm, w
g=1.1mm.Resonance takes place at the 9.49GHz place of microwave X frequency range in the return loss plot of antenna A-2 as shown in Figure 2, and resonance peak intensity is-32.90dB to satisfy the antenna job requirement well.By antenna among Fig. 4 at the E at resonance frequency place, H surface radiation directional diagram as can be known, the maxgain value of antenna A-2 is 9.45dBi.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-a at 9.48GHz place only is 6.29dBi, and the invention antenna A-2 of institute is than having improved 3.16dBi.
Embodiment three:
Adopt the circuit board lithographic technique to finish the making of the invention antenna A-3 of institute, its concrete preparation process is as described in the enforcement mode.In the xoy plane, suppose the rectangular metal paster of antenna A-3 to be divided into three that area equates along the x direction, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-3 rectangular metal paster is L * W=12.0 * 12.0=144.0mm
2λ/4 impedance matching boxs are of a size of l
g=5.0mm, w
g=1.5mm.Resonance takes place at the 9.16GHz place of microwave X frequency range in the return loss plot of antenna A-3 as shown in Figure 3, and resonance peak intensity is-35.67dB to satisfy the antenna job requirement well.By antenna among Fig. 5 at the E at resonance frequency place, H surface radiation directional diagram as can be known, the maxgain value of antenna A-3 is 8.44dBi.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-b at 9.17GHz place only is 6.90dBi, and the invention antenna A-3 of institute is than having improved 1.54dBi.
Embodiment four:
Adopt the circuit board lithographic technique to finish the making of the invention antenna A-4 of institute, its concrete preparation process is as described in the enforcement mode.In the xoy plane, suppose the rectangular metal paster of antenna A-3 to be divided into three that area does not wait along the x direction, be equipped with a metallization via every center, it connects rectangular metal paster and ground plate respectively in two ends up and down.The area of antenna A-4 rectangular metal paster is L * W=12.0 * 12.0=144.0mm
2, suppose that three length is followed successively by 3.0,4.0 and 5.0mm along x axle forward.λ/4 impedance matching boxs are of a size of l
g=5.0mm, w
g=1.7mm.Resonance takes place at the 9.17GHz place of microwave X frequency range in the return loss plot of antenna A-4 as shown in Figure 3, and resonance peak intensity is-36.24dB to satisfy the antenna job requirement well.By antenna among Fig. 7 at the E at resonance frequency place, H surface radiation directional diagram as can be known, the maxgain value of antenna A-4 is 9.46dBi.And the gain of adopting the same media substrate to work in the common micro-strip paster antenna MPA-b at 9.17GHz place only is 6.90dBi, and the invention antenna A-4 of institute is than having improved 2.56dBi.
In sum, the X-band microstrip antenna by means of the negative dielectric transmission line structural design among the present invention has shown the high-gain performance, both can independent utility, be suitable as very much the unit of aerial array again.
Claims (4)
1. X-band high-gain microstrip antenna based on negative dielectric transmission line, this antenna comprises rectangular metal paster, 50 Ω microstrip feed lines, λ/4 impedance matching boxs, medium substrate and ground plate, its principal character is the metallization via that loads some between rectangular metal paster and ground plate, makes this antenna work in X-band by number, geometric position and the arrangement mode that changes the metallization via.
2. according to claim 1 described X-band high-gain microstrip antenna based on negative dielectric transmission line, the diameter of the via that it is characterized in that metallizing is 0.8mm, and the appended conducting metal thickness of coating of inwall is 0.1mm.
3. according to claim 1 described X-band high-gain microstrip antenna based on negative dielectric transmission line, the number of the via that it is characterized in that metallizing is 3～4.
4. according to claim 1 described X-band high-gain microstrip antenna based on negative dielectric transmission line, it is characterized in that feeding classification adopts little band side feedback, λ/4 impedance matching boxs are connected between rectangular metal paster and the 50 Ω feeder lines.
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| CN2007103081636A CN101471494B (en) | 2007-12-28 | 2007-12-28 | X waveband high-gain microstrip antenna based on negative dielectric transmission line |
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| CN2007103081636A CN101471494B (en) | 2007-12-28 | 2007-12-28 | X waveband high-gain microstrip antenna based on negative dielectric transmission line |
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| CN101471494B CN101471494B (en) | 2012-08-01 |
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Cited By (11)
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| CN102074772A (en) * | 2011-01-07 | 2011-05-25 | 中国电子科技集团公司第十研究所 | Strip line waveguide switch |
| CN102170042A (en) * | 2011-01-26 | 2011-08-31 | 中兴通讯股份有限公司 | Micro-strip antenna and method for improving angle diversity effect |
| CN102956963A (en) * | 2011-08-26 | 2013-03-06 | 吕永康 | Directional digital TV antenna |
| CN103620870A (en) * | 2011-06-23 | 2014-03-05 | 加利福尼亚大学董事会 | Electrically small vertical split-ring resonator antennas |
| CN105379010A (en) * | 2013-07-16 | 2016-03-02 | Lg伊诺特有限公司 | Ultra-wide band antenna |
| CN105655716A (en) * | 2014-11-13 | 2016-06-08 | 航天信息股份有限公司 | Microstrip antenna apparatus |
| CN107706518A (en) * | 2017-09-26 | 2018-02-16 | 北京邮电大学 | A kind of vortex electromagnetic antenna battle array of helical structure |
| CN109411900A (en) * | 2018-12-14 | 2019-03-01 | 湖南华诺星空电子技术有限公司 | A kind of broad-band antenna for through-wall radar imaging |
| WO2019080547A1 (en) * | 2017-10-26 | 2019-05-02 | 武汉虹信通信技术有限责任公司 | Microstrip radiation unit and antenna for use in 5g system |
| WO2020088407A1 (en) * | 2018-10-30 | 2020-05-07 | 深圳Tcl新技术有限公司 | Antenna, signal transmission device and television |
| CN113587990A (en) * | 2021-07-30 | 2021-11-02 | 中北大学 | Parameter detection method, device and equipment based on microstrip antenna sensor |
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| JP2001358530A (en) * | 2000-06-15 | 2001-12-26 | Matsushita Commun Ind Co Ltd | Circular polarization microstrip antenna |
| JP4170803B2 (en) * | 2003-03-14 | 2008-10-22 | 株式会社リコー | Image forming apparatus |
| CN2857244Y (en) * | 2005-08-03 | 2007-01-10 | 深圳国瑞通讯有限公司 | Combined mini-band patch antenna for mobile satellite communicator |
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- 2007-12-28 CN CN2007103081636A patent/CN101471494B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074772B (en) * | 2011-01-07 | 2014-01-29 | 中国电子科技集团公司第十研究所 | Strip line waveguide switch |
| CN102074772A (en) * | 2011-01-07 | 2011-05-25 | 中国电子科技集团公司第十研究所 | Strip line waveguide switch |
| CN102170042A (en) * | 2011-01-26 | 2011-08-31 | 中兴通讯股份有限公司 | Micro-strip antenna and method for improving angle diversity effect |
| US9502761B2 (en) | 2011-06-23 | 2016-11-22 | Nec Corporation | Electrically small vertical split-ring resonator antennas |
| CN103620870B (en) * | 2011-06-23 | 2017-02-15 | 加利福尼亚大学董事会 | Electrically small vertical split-ring resonator antennas |
| CN103620870A (en) * | 2011-06-23 | 2014-03-05 | 加利福尼亚大学董事会 | Electrically small vertical split-ring resonator antennas |
| CN102956963B (en) * | 2011-08-26 | 2015-08-05 | 吕永康 | Directional digital TV antenna |
| CN102956963A (en) * | 2011-08-26 | 2013-03-06 | 吕永康 | Directional digital TV antenna |
| CN105379010A (en) * | 2013-07-16 | 2016-03-02 | Lg伊诺特有限公司 | Ultra-wide band antenna |
| CN105655716B (en) * | 2014-11-13 | 2020-06-12 | 航天信息股份有限公司 | Microstrip antenna device |
| CN105655716A (en) * | 2014-11-13 | 2016-06-08 | 航天信息股份有限公司 | Microstrip antenna apparatus |
| CN107706518A (en) * | 2017-09-26 | 2018-02-16 | 北京邮电大学 | A kind of vortex electromagnetic antenna battle array of helical structure |
| CN107706518B (en) * | 2017-09-26 | 2019-11-15 | 北京邮电大学 | A kind of vortex electromagnetic antenna battle array of helical structure |
| WO2019080547A1 (en) * | 2017-10-26 | 2019-05-02 | 武汉虹信通信技术有限责任公司 | Microstrip radiation unit and antenna for use in 5g system |
| WO2020088407A1 (en) * | 2018-10-30 | 2020-05-07 | 深圳Tcl新技术有限公司 | Antenna, signal transmission device and television |
| CN109411900A (en) * | 2018-12-14 | 2019-03-01 | 湖南华诺星空电子技术有限公司 | A kind of broad-band antenna for through-wall radar imaging |
| CN113587990A (en) * | 2021-07-30 | 2021-11-02 | 中北大学 | Parameter detection method, device and equipment based on microstrip antenna sensor |
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| CN101471494B (en) | 2012-08-01 |
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