CN101465276B - Air-intake device and semiconductor processing equipment applying the same - Google Patents
Air-intake device and semiconductor processing equipment applying the same Download PDFInfo
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- CN101465276B CN101465276B CN2007101799115A CN200710179911A CN101465276B CN 101465276 B CN101465276 B CN 101465276B CN 2007101799115 A CN2007101799115 A CN 2007101799115A CN 200710179911 A CN200710179911 A CN 200710179911A CN 101465276 B CN101465276 B CN 101465276B
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Abstract
The invention provides a gas feeding device which is used to spray gas into a reaction chamber; the reaction chamber is provided with a chamber sidewall and a chamber upper cover; the gas feeding device comprises a lateral nozzle which is used to spray the gas into the reaction chamber from the lateral face. The invention also provides a semiconductor processing equipment, which comprises the reaction chamber which is provided with the chamber sidewall and the chamber upper cover, and the feeding device. The feeding device and the semiconductor processing equipment using the feeding device enable the gas fed in the reaction chamber to be evenly distributed and uniformly reach the surface of the processed wafer and other semiconductor devices, so that the surface processing/handling rate of the wafer and other semiconductor devices cab be more uniform to improve the processing/handling results of the wafer and other semiconductor devices.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of inlet duct and use the semiconductor processing equipment of this inlet duct.
Background technology
Along with the high speed development of electronic technology, people are increasingly high to the integrated level requirement of integrated circuit, and the processing/disposal ability of semiconductor device constantly improves in this enterprise that will seek survival the product integrated circuit.Usually, the processing/processing of semiconductor device is carried out in semiconductor processing equipment.For example, can adopt semiconductor etching device to come semiconductor device such as wafer are carried out etching.
What in lithographic technique, extensively adopt at present, is plasma etching technology.So-called plasma etching technology refers to; Reacting gas produces the plasma that ionization forms the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state under the exciting of radio-frequency power; These active particles with (for example be etched object; Various physics and chemical reaction take place and form volatile product in surface wafer), thereby the performance of the feasible body surface that is etched changes.
Usually; In plasma etch process; Reacting gas enters in the reaction chamber of semiconductor etching device through the inlet duct that is arranged on the semiconductor etching device; And receive exciting of radio-frequency power at this and produce ionization and form plasma, so that the semiconductor device such as wafer in the reaction chamber are carried out etching.
For above-mentioned semiconductor etching device, etching homogeneity is a very important index, thereby people seek the whole bag of tricks always and obtain good etching homogeneity.In practical application, the factor that influences etching homogeneity has a lot, and for example the air flow jetting mode of inlet duct is exactly the influencing factor of one of them outbalance.Therefore, people hope to control through the spray regime of improving air-flow the distribution of active particle in the etching process, thereby improve etch rate, etching homogeneity and select ratio.
Inlet duct is arranged on the substantial middle position of the quartz cover of reaction chamber top usually, and its air flow jetting mode is reacting gas to be concentrated from the reaction chamber top spray into the substantial middle position in the reaction chamber.The result of this spray regime is, the central part place of semiconductor device such as the wafer that in reaction chamber, is etched, and reacting gas is assembled more, and the degree that obtains ionization is lower; And at the marginal position place of the semiconductor device such as wafer that are etched, it is less that reacting gas is assembled, and the degree that obtains ionization is higher.And on the other hand, at the central part place of semiconductor device such as wafer, the density of plasma is higher; At the marginal position place of semiconductor device such as wafer, the density of plasma is lower.Thereby make at semiconductor device etch rates such as wafers inhomogeneously, and then cause the etching result inhomogeneous.
A kind of modification as the air flow jetting mode of above-mentioned inlet duct is, inlet duct is arranged on the edge of reaction chamber bottom usually, and its air flow jetting mode is that reacting gas is sprayed in the reaction chamber from the reaction chamber lower edge.The result of this spray regime is, the central part place of semiconductor device such as the wafer that in reaction chamber, is etched, and air accumulation must lack, and the density of plasma is higher; At the marginal position place of semiconductor device such as wafer, air accumulation many, and the density of plasma is lower.Therefore, this causes in the etching of the central part place of semiconductor device such as wafer and edge inhomogeneous equally.
For the air-flow distribution situation of more clearly being familiar with center upper portion position air flow jetting mode and the distribution situation of plasma density, please consult Fig. 1 and Fig. 2 simultaneously.
Wherein, Fig. 1 is the simulation air-flow distribution map of the air flow jetting mode of existing inlet duct.The coordinate representation speed on right side among the figure, m/s.As can be seen from the figure; Reacting gas enters in the reaction chamber from the substantial middle position of quartz cover; Central position air-flow distribution density at reaction chamber is bigger, and autoreaction chamber central position is to its edge gradually in the transient process, and the air-flow distribution density reduces gradually.
The test curve figure of the plasma density that Fig. 2 is produced for the air flow jetting mode of existing inlet duct.Among the figure, abscissa is represented the position apart from processed/processing apparatus central point, and unit is mm; Ordinate is represented the distribution density of plasma, and unit is m
-3As can be seen from the figure, higher in the density of the central position plasma of reaction chamber, and autoreaction chamber central position is to its edge gradually in the transient process, and the density of plasma reduces gradually.
Is that example comes existing inlet duct is described although be above with the inlet duct that is adopted in the semiconductor etching device; But, for other semiconductor processing equipments that adopt above-mentioned inlet duct, have following problems equally; Promptly; When the reaction chamber of semiconductor processing equipment sprays reacting gas, the central part place in reaction chamber, air accumulation many; At the marginal position place of reaction chamber, air accumulation must lack.Like this; When the semiconductor device such as wafer in the reaction chamber are processed/when handling; This will make in the processing/processing speed of the central part place of semiconductor device such as wafer and edge inhomogeneous, so that processing is inhomogeneous, thus the quality of influence processing/processing.
Summary of the invention
For solving the problems of the technologies described above; The semiconductor processing equipment that the present invention provides a kind of inlet duct and uses this inlet duct; It can make the distribution of gas that enters in the reaction chamber must compare evenly; And arrive the surface of processed semiconductor device such as wafer equably, thus make the processing/processing speed of semiconductor device surfaces such as wafer more even, and then improve processing to semiconductor device such as wafers.
For this reason, the invention provides a kind of inlet duct that is used for jet gas in reaction chamber, said reaction chamber has chamber sidewall and cavity top cover.Said inlet duct comprises at least three side nozzles; Said at least three side nozzles evenly distribute around said reaction chamber and curl is arranged; And each said side nozzle is an acute angle in the projection of horizontal plane and along the angle theta between the projection of reaction chamber sidewall at horizontal plane of spiral direction of rotation in these side nozzle downstream;, in order to be injected to gas in the said reaction chamber from the side and to form circulation, so that reacting gas reaches even distribution at substrate surface.
Wherein, said inlet duct also comprises central nozzle, and said central nozzle is arranged on the central position of said cavity top cover, in order to the central position of gas from reaction chamber top is injected in the said reaction chamber.
Wherein, said side nozzle is arranged on the said chamber sidewall.
Wherein, said side nozzle is arranged on the marginal position place of said cavity top cover, and/or is arranged on the marginal position place of cavity bottom.
Wherein, said side nozzle and said reaction chamber loam cake and/or the reaction chamber bottom β that has a certain degree, the span of β is between 0 degree to 90 degree.Preferably, the span of β is spent between 45 degree 0.
Wherein, said angle theta is the acute angle greater than 30 degree.
Wherein, the angle beta of said side nozzle and/or angle θ are adjustable, and the adjustable range of angle beta is between 0 degree to 90 degree, and angle θ regulates in the acute angle scope greater than 0 degree.Preferably, the adjustable range of the angle beta of said side nozzle is spent between 45 degree 0, and angle θ regulates in the acute angle scope greater than 30 degree.
In addition, the present invention also provides a kind of semiconductor processing equipment, it comprise have chamber sidewall, the reaction chamber of cavity top cover and/or chamber bottom, and aforesaid inlet duct.
Can find out through technique scheme; Inlet duct provided by the invention is through on chamber sidewall; And/or at the marginal position place of cavity top cover, and/or side nozzle is set at the marginal position place of chamber bottom, make the distribution of gas that gets into reaction chamber get more even; Thereby make the processing/processing speed of semiconductor device surfaces such as wafer more even, and then improve processing semiconductor device such as wafers.And inlet duct provided by the invention can obtain different ionization results, thereby improves the kind and the quantity of active particle in semiconductor machining/processing procedure, and improves the uniformity and the selection ratio of processing/processing such as etching.
In addition; Semiconductor processing equipment provided by the invention is because used inlet duct provided by the invention; Therefore can make the distribution of gas that gets into reaction chamber get more even equally; Thereby make the processing/processing speed of semiconductor device surfaces such as wafer more even, and then improve processing semiconductor device such as wafers.And, can also improve the uniformity and the selection of processing/processing such as etching and compare.
Description of drawings
Fig. 1 is the simulation air velocity field pattern of existing inlet duct;
Fig. 2 is the plasma density test curve figure of existing inlet duct;
Fig. 3 shows the side nozzle of inlet duct provided by the invention and the angle theta between the chamber sidewall;
Fig. 4 shows the side nozzle of inlet duct provided by the invention and the angle β between the cavity top cover;
Fig. 5 is the distribution map of the etching map that adopts inlet duct provided by the invention and obtain.
Embodiment
Inlet duct provided by the invention and the technological core of using the semiconductor processing equipment of this inlet duct are; Through being set, side nozzle make the distribution of gas that gets into reaction chamber get more even; Thereby make the processing/processing speed of semiconductor device surfaces such as wafer more even, and then improve processing/processing quality semiconductor device such as wafers.
For making those skilled in the art person understand technical scheme of the present invention better, inlet duct provided by the invention and the semiconductor processing equipment of using this inlet duct are described in detail below in conjunction with accompanying drawing.
Inlet duct provided by the invention can be used in the reaction chamber of semiconductor processing equipment, spraying into gas.This inlet duct comprises the side nozzle that can spray into gas from the side to reaction chamber.These nozzles can be arranged on the sidewall of reaction chamber, also can be arranged on the marginal position place of reaction chamber loam cake or the marginal position place of bottom, as long as it can be injected to gas in the reaction chamber from the side equably.
The inlet duct that first embodiment of the invention provides comprises: be arranged on the reaction chamber quartz cover the substantial middle position central nozzle be arranged on the side nozzle on the reaction chamber sidewall.Wherein, the nozzle in the set-up mode of central nozzle and jet mode and the existing inlet duct is similar, repeats no more at this.Specify the set-up mode and the jet mode of side nozzle below.
Please consult Fig. 3 and Fig. 4 simultaneously; The sidewall of reaction chamber is provided with four side nozzles; These side nozzles evenly distribute on shape ground along the sidewall of reaction chamber in the shape of a spiral; And the sidewall of each side nozzle and the reaction chamber θ that has a certain degree, that is, each side nozzle is θ in the projection of horizontal plane and the angle between the projection of reaction chamber sidewall at horizontal plane; The quartz cover of each side nozzle and the reaction chamber β that has a certain degree, that is, each side nozzle is β in the projection of reaction chamber sidewall and the angle between the projection of reaction chamber quartz cover at this sidewall.Wherein, the span of angle theta is between 0 degree to 180 degree; The span of angle β is between 0 degree to 90 degree.
When the inlet duct that adopts first embodiment of the invention to provide sprayed into gas in reaction chamber, the gas that in reaction chamber, is sprayed by central nozzle distributed morely in the reaction chamber central position, distributes lessly in reaction chamber edge; The gas that in reaction chamber, is sprayed by side nozzle distributes morely in reaction chamber edge, distributes lessly in the reaction chamber central position.Like this, by means of the synergy of central nozzle and side nozzle, can make the gas that is injected to via this inlet duct in the reaction chamber from the central position to the marginal position, punish cloth and get comparatively even.
In practical application; Through the adjustment side nozzle angle (promptly; Change the angle θ and the angle beta of side nozzle), can change the direction and the position of gas blowing, and then improve the uniformity of the air-flow that this inlet duct sprays; Thereby improve the distribution of gas situation on processed in the reaction chamber/processing apparatus, the final uniformity that realizes processing/processing.
It is to be noted; Although four side nozzles all equate with angle theta size between the projection of reaction chamber sidewall at horizontal plane in the projection of horizontal plane in the previous embodiment; But in practical application, the θ angle of a plurality of side nozzles can be a different numerical according to actual needs also.And side nozzle need not shape setting in the shape of a spiral along the reaction chamber sidewall.
In addition, adopt inlet duct provided by the invention can regulate the ionization distribution of results of zones of different.With CF4 is example, can obtain following ionization result: CF4 → CF3+F usually, CF4 → CF2+2F, and CF3 → CF2+F, CF3+CF3 → CF2+F ...; With Cl2 is example, can obtain following ionization result: e+Cl2 → Cl2++e+e usually, e+Cl2 → Cl++Cl+e+e, and e+Cl2 → Cl++Cl-+e, e+Cl2 → (Cl-)
*→ Cl-+Cl
*, e+Cl2 → (Cl-)
*+ e → Cl+Cl
*+ e ....In different zones; These ionization distribution of results are often even inadequately, yet, by means of inlet duct provided by the invention; Angle through the adjustment side nozzle; Just can reach in the different position adjustments active particle kinds and the effect of quantity, so just can improve the distribution of etch rate map figure, and then improve etching homogeneity and select ratio.For example, Fig. 5 just shows the distribution map that adopts etching map behind the inlet duct provided by the invention.Wherein, etch rate (ER)=1840A/min, etching homogeneity (EU)=1.8%.
It is understandable that; Although the inlet duct in the previous embodiment comprises central nozzle and side nozzle; But the inlet duct in practical application also can only comprise the plurality of side nozzle; As long as require to adjust angle θ and angle beta according to reality; Also can make the gas that gets in the reaction chamber arrive the surface of semiconductor device such as wafer more equably, thereby make the processing/processing speed of semiconductor device surfaces such as wafer more even, and then improve processing/processing quality semiconductor device such as wafers.
Certainly; In practical application, inlet duct provided by the invention also can adopt from the mode of the bottom air inlet of reaction chamber, that is to say; Inlet duct provided by the invention also can be arranged on the bottom of reaction chamber, and sprays into gas by the bottom of reaction chamber to reaction chamber inside.For example, central nozzle is arranged on the substantial middle position of reaction chamber bottom, and what side nozzle was arranged on the marginal position place of reaction chamber bottom and/or was arranged on the reaction chamber sidewall leans on the upper/lower positions place.At this moment, side nozzle and reaction chamber bottom are angle θ, so that side nozzle tilts up to reaction chamber internal spray gas.
In addition, as another technical scheme of the present invention, the present invention also provides a kind of semiconductor processing equipment.This equipment disposition has inlet duct provided by the invention, and is similar with semiconductor processing equipment of the prior art as for the structure and the operation principle of other parts of this equipment, repeats no more at this.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (10)
1. inlet duct that is used for jet gas in reaction chamber; Said reaction chamber has chamber sidewall and cavity top cover; It is characterized in that; Said inlet duct comprises at least three side nozzles; Said at least three side nozzles evenly distribute around said reaction chamber and curl is arranged, and each said side nozzle is acute angle in the projection of horizontal plane and along the angle theta between the projection of reaction chamber sidewall at horizontal plane of spiral direction of rotation in these side nozzle downstream, in order to be injected to gas in the said reaction chamber from the side and to form circulation.
2. inlet duct according to claim 1 is characterized in that, also comprises central nozzle, and said central nozzle is arranged on the central position of said cavity top cover, in order to the central position of gas from reaction chamber top is injected in the said reaction chamber.
3. inlet duct according to claim 1 and 2 is characterized in that said side nozzle is arranged on the said chamber sidewall.
4. inlet duct according to claim 1 and 2 is characterized in that, said side nozzle is arranged on the marginal position place of said cavity top cover, and/or is arranged on the marginal position place of cavity bottom.
5. inlet duct according to claim 1 is characterized in that, said side nozzle and said reaction chamber loam cake and/or the reaction chamber bottom β that has a certain degree, and the span of β is between 0 degree to 90 degree.
6. inlet duct according to claim 5 is characterized in that, the span of β is spent between 45 degree 0.
7. inlet duct according to claim 1 is characterized in that, said angle theta is the acute angle greater than 30 degree.
8. inlet duct according to claim 5 is characterized in that, the angle beta of said side nozzle and/or angle θ are adjustable, and the adjustable range of angle beta is between 0 degree to 90 degree, and angle θ regulates in the acute angle scope greater than 0 degree.
9. inlet duct according to claim 8 is characterized in that, the adjustable range of the angle beta of said side nozzle is spent between 45 degree 0, and angle θ regulates in the acute angle scope greater than 30 degree.
10. semiconductor processing equipment, comprise have chamber sidewall, the reaction chamber of cavity top cover, it is characterized in that, also comprise like any described inlet duct in the claim 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101799115A CN101465276B (en) | 2007-12-19 | 2007-12-19 | Air-intake device and semiconductor processing equipment applying the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101799115A CN101465276B (en) | 2007-12-19 | 2007-12-19 | Air-intake device and semiconductor processing equipment applying the same |
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| CN101465276A CN101465276A (en) | 2009-06-24 |
| CN101465276B true CN101465276B (en) | 2012-07-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103484A (en) * | 2013-04-15 | 2014-10-15 | 中微半导体设备(上海)有限公司 | Gas supplying device and plasma processing device |
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| CN103915307B (en) * | 2012-12-31 | 2016-08-17 | 中微半导体设备(上海)有限公司 | Plasma processing chamber and the gas injection apparatus for this plasma processing chamber |
| CN104952760A (en) * | 2014-03-24 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Intake device and semiconductor processing equipment |
| KR20230035141A (en) * | 2017-04-10 | 2023-03-10 | 피코순 오와이 | Uniform deposition |
| CN108878241B (en) * | 2017-05-10 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Semiconductor device and method for cleaning reaction chamber of semiconductor device |
| CN112086337B (en) * | 2019-06-14 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN110634775B (en) * | 2019-09-16 | 2022-11-08 | 西安奕斯伟材料科技有限公司 | Airflow control device and wafer processing device |
| CN114369813B (en) * | 2020-10-15 | 2023-05-26 | 长鑫存储技术有限公司 | Diffusion furnace |
| CN112695301A (en) * | 2020-12-22 | 2021-04-23 | 湖南顶立科技有限公司 | Vapor deposition device with uniform airflow rotation |
| CN113201726B (en) * | 2021-04-30 | 2023-05-23 | 浙江大学杭州国际科创中心 | Preparation method of two-dimensional material |
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| CN1536612A (en) * | 2003-04-09 | 2004-10-13 | 三星电子株式会社 | Gas supply device |
| CN1848368A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching device capable of raising etching uniformity |
| CN101153387A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | High-density plasma deposition reaction chamber and air injection ring for reaction chamber |
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Patent Citations (3)
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| CN1536612A (en) * | 2003-04-09 | 2004-10-13 | 三星电子株式会社 | Gas supply device |
| CN1848368A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching device capable of raising etching uniformity |
| CN101153387A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | High-density plasma deposition reaction chamber and air injection ring for reaction chamber |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103484A (en) * | 2013-04-15 | 2014-10-15 | 中微半导体设备(上海)有限公司 | Gas supplying device and plasma processing device |
| CN104103484B (en) * | 2013-04-15 | 2017-07-25 | 中微半导体设备(上海)有限公司 | Gas supply device and plasma processing apparatus |
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| CN101465276A (en) | 2009-06-24 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |