CN101463296A - Microelectronic device cleaning agent - Google Patents
Microelectronic device cleaning agent Download PDFInfo
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- CN101463296A CN101463296A CNA200810235553XA CN200810235553A CN101463296A CN 101463296 A CN101463296 A CN 101463296A CN A200810235553X A CNA200810235553X A CN A200810235553XA CN 200810235553 A CN200810235553 A CN 200810235553A CN 101463296 A CN101463296 A CN 101463296A
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- fatty alcohol
- polyoxyethylene ether
- sodium
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Abstract
The invention relates to a cleansing agent for microelectronic equipment. The cleansing agent comprises the following compositions according to weight percentage: 3-10 portions of inorganic salt, 5-10 portions of a surface active agent, 5-10 portions of a penetrating agent, 1-5 portions of inhibiter, 1-6 portions of a pH value conditioning agent, and the rest being de-ionized water. The cleansing agent for the microelectronic equipment has the technical effects as follows: 1) the cleansing agent has scientific and reasonable formulation and simple preparation process without special equipment; 2) the cleansing agent has strong cleansing capability and short cleansing time, saves labor power and time, improves working efficiency and has efficacy of rust removal and rust prevention; and 3) the cleansing agent is a water soluble cleansing agent, has low corrosion to the equipment, and is safe and reliable for use.
Description
Technical field
The present invention relates to a kind of clean-out system, specifically, relate to a kind of microelectronic device cleaning agent of aq. type.
Background technology
The cleaning of micro-electronic device parts be this equipment process, assemble, store and process such as maintenance in indispensable process procedure.Because the consumption of the precise electronic components and parts of micro-electronic device is quite big, therefore the workload of this type of electrical component cleaning and the usage quantity of clean-out system also are certain to corresponding increase.At present,, mainly contain the method for embathing, hydro-peening method and ultrasonic cleaning process etc., no matter take which kind of purging method, all need to use clean-out system the purging method of microelectronic component.Typically program is to clean under the situation of low pH value scope earlier, the dirty pollutent that demineralizes, and then carry out high pH value and clean, remove organism.Added washing composition in some cleaning solution to help to remove serious biology and organic fragment dirt thing, simultaneously, available inner complex is assisted and is removed colloid, organism, microorganism and sulfate scale.Existing be used for radio equipment detergent and mostly be solvent-borne type, the shortcoming that these clean-out systems exist at first is that cleaning performance is not really desirable, and the top layer of black appears in electronic unit material after the cleaning easily, make troubles to following process, the processing to precision components causes puzzlement especially; Next is stronger to equipment corrosion, increases equipment cost; Moreover, cleaning temperature and scavenging period are difficult to reach simultaneously ideal conditions, under the constant situation of cleaning performance, at high temperature clean often, can shorten scavenging period, cleaning temperature is reduced under the situation of room temperature, and scavenging period just needs to prolong, and generally scavenging period needs 10 to 30 minutes at ambient temperature.
Therefore remain to be developed a kind of microelectronics clean-out system of aq. type, can improve cleaning performance at ambient temperature, can also reduce corrodibility equipment.
Summary of the invention
Main purpose of the present invention is to overcome the above-mentioned shortcoming that currently available products exists, a kind of microelectronic device cleaning agent is provided, can thoroughly cleans wireless apparatus surface and oil contaminant and rust staining, and can prevent that the wireless apparatus surface from forming rust staining once more, can also shorten scavenging period, increase work efficiency.
Microelectronic device cleaning agent of the present invention comprises following component according to weight percent:
Inorganic salt 3～10
Tensio-active agent 5～10
Permeate agent 5～10
Inhibiter 1～5
PH conditioning agent 1～6
The deionized water surplus,
Wherein, said inorganic salt are sodium phosphate, Di-Sodium Phosphate, sodium sulfate, sulfuric acid tripotassium or Repone K; Said tensio-active agent is a nonionic surface active agent, is fatty alcohol-polyoxyethylene ether or alkylol amide; Said permeate agent is fatty alcohol-polyoxyethylene ether or glycol ether compounds; Said inhibiter is benzotriazole sodium or sodium wolframate; Said PH conditioning agent is mineral alkali, organic bases or its combination; Mineral alkali is sodium hydroxide or potassium hydroxide; Organic bases is one or more in many hydroxyls polyamines and the amine.
Preferably,
Microelectronic device cleaning agent of the present invention comprises following component according to weight percent:
Inorganic salt 5～10
Tensio-active agent 5～8
Permeate agent 5～8
Inhibiter 3～5
PH conditioning agent 2～6
The deionized water surplus,
Wherein, said inorganic salt are sodium phosphate; Said tensio-active agent and permeate agent fatty alcohol-polyoxyethylene ether are that the polymerization degree is that 15 fatty alcohol-polyoxyethylene ether, the polymerization degree are that 20 fatty alcohol-polyoxyethylene ether, the polymerization degree are that 35 the fatty alcohol-polyoxyethylene ether or the polymerization degree are 40 fatty alcohol-polyoxyethylene ether; Said tensio-active agent alkylol amide is a lauroyl monoethanolamine; Said permeate agent agent glycol ether compounds is to be a kind of in ethylene glycol ethyl ether and the butyl glycol ether or two kinds; Said inhibiter is a benzotriazole sodium; Said many hydroxyls of PH conditioning agent polyamines is trolamine, THED tetrahydroxy ethylene diamine, hexahydroxy-propyl group propylene diamine, quadrol or Tetramethylammonium hydroxide.
More preferably, microelectronic device cleaning agent of the present invention is characterized in that, comprises following component according to weight percent:
Sodium phosphate 3
The polymerization degree is 20 fatty alcohol-polyoxyethylene ether 5
Ethylene glycol ethyl ether 10
Benzotriazole sodium 1
Potassium hydroxide 2
Deionized water 79.
The pH value of clean-out system of the present invention is 11 to 12, and color is little Huang, has no irritating odor, and proportion is 1.0～1.1.
Microelectronic device cleaning agent of the present invention has following technique effect: 1) scientific formulation of the present invention is reasonable, and production technique is simple, does not need specific installation; 2) cleansing power is strong, and scavenging period is short, saves manpower and man-hour, increases work efficiency, and has rust cleaning and antirust effect; 3) be water-soluble washing agent, low to the corrodibility of equipment, safe and reliable.
Embodiment
Employed raw material of embodiments of the invention and equipment are the commercially available prod.
Embodiment 1
In the present embodiment, the weight percent of each component of microelectronic device cleaning agent is as follows:
| Component | Weight percent % |
| Sodium phosphate | 3 |
| The polymerization degree is 20 fatty alcohol-polyoxyethylene ether | 5 |
| Ethylene glycol ethyl ether | 10 |
| Benzotriazole sodium | 1 |
| Potassium hydroxide | 2 |
| Deionized water | 79 |
Preparation method: prepare each component according to aforementioned proportion, at room temperature said components is dissolved in the deionized water successively, mix, promptly become the present invention's clean-out system finished product.
Embodiment 2
In the present embodiment, the weight percent of each component of microelectronic device cleaning agent is as follows:
| Component | Weight percent % |
| Sodium sulfate | 10 |
| Lauroyl monoethanolamine | 10 |
| The polymerization degree is 15 fatty alcohol-polyoxyethylene ether | 5 |
| Sodium wolframate | 5 |
| Sodium hydroxide | 1 |
| Deionized water | 69 |
Preparation method: prepare each component according to aforementioned proportion, at room temperature said components is dissolved in the deionized water successively, mix, promptly become the present invention's clean-out system finished product.
Embodiment 3
In the present embodiment, the weight percent of each component of microelectronic device cleaning agent is as follows:
| Component | Weight percent % |
| Di-Sodium Phosphate | 5 |
| The polymerization degree is 35 fatty alcohol-polyoxyethylene ether | 8 |
| Butyl glycol ether | 8 |
| Benzotriazole sodium | 3 |
| THED tetrahydroxy ethylene diamine | 6 |
| Deionized water | 70 |
Preparation method: prepare each component according to aforementioned proportion, at room temperature said components is dissolved in the deionized water successively, mix, promptly become the present invention's clean-out system finished product.
Embodiment 4: effect analysis
Select the microelectronic device cleaning agent of any one prescription among the embodiment 1 to 3 for use, cleaning microelectronic equipment: the ultrasonic cleaning apparatus that adopts 28khz during cleaning, micro-electronic device is placed in the ultrasonic cleaning apparatus, the pure water blended liquid that adds clean-out system and 20 times of volumes, the control cleaning temperature is 40 ℃, cleaned 6 minutes, and took out.After the cleaning, the method that adopts opticmicroscope to amplify 100 times detects, and the no greasy dirt in micro-electronic device surface is residual, and surface-brightening cleans still acomia crow in wireless apparatus surface and rust staining phenomenon in back 24 hours.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (3)
1, a kind of microelectronic device cleaning agent is characterized in that, comprises following component according to weight percent:
Inorganic salt 3～10
Tensio-active agent 5～10
Permeate agent 5～10
Inhibiter 1～5
PH conditioning agent 1～6
The deionized water surplus,
Wherein, said inorganic salt are sodium phosphate, Di-Sodium Phosphate, sodium sulfate, sulfuric acid tripotassium or Repone K; Said tensio-active agent is a nonionic surface active agent, is fatty alcohol-polyoxyethylene ether or alkylol amide; Said permeate agent is fatty alcohol-polyoxyethylene ether or glycol ether compounds; Said inhibiter is benzotriazole sodium or sodium wolframate; Said PH conditioning agent is mineral alkali, organic bases or its combination; Mineral alkali is sodium hydroxide or potassium hydroxide; Organic bases is one or more in many hydroxyls polyamines and the amine.
2, microelectronic device cleaning agent according to claim 1 is characterized in that, comprises following component according to weight percent:
Inorganic salt 5～10
Tensio-active agent 5～8
Permeate agent 5～8
Inhibiter 3～5
PH conditioning agent 2～6
The deionized water surplus,
Wherein, said inorganic salt are sodium phosphate; Said tensio-active agent and permeate agent fatty alcohol-polyoxyethylene ether are that the polymerization degree is that 15 fatty alcohol-polyoxyethylene ether, the polymerization degree are that 20 fatty alcohol-polyoxyethylene ether, the polymerization degree are that 35 the fatty alcohol-polyoxyethylene ether or the polymerization degree are 40 fatty alcohol-polyoxyethylene ether; Said tensio-active agent alkylol amide is a lauroyl monoethanolamine; Said permeate agent agent glycol ether compounds is to be a kind of in ethylene glycol ethyl ether and the butyl glycol ether or two kinds; Said inhibiter is a benzotriazole sodium; Said many hydroxyls of PH conditioning agent polyamines is trolamine, THED tetrahydroxy ethylene diamine, hexahydroxy-propyl group propylene diamine, quadrol or Tetramethylammonium hydroxide.
3, according to claim 1 or 2 said microelectronic device cleaning agents, it is characterized in that, comprise following component according to weight percent:
Sodium phosphate 3
The polymerization degree is 20 fatty alcohol-polyoxyethylene ether 5
Ethylene glycol ethyl ether 10
Benzotriazole sodium 1
Potassium hydroxide 2
Deionized water 79.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810235553XA CN101463296B (en) | 2008-11-28 | 2008-11-28 | Microelectronic device cleaning agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810235553XA CN101463296B (en) | 2008-11-28 | 2008-11-28 | Microelectronic device cleaning agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101463296A true CN101463296A (en) | 2009-06-24 |
| CN101463296B CN101463296B (en) | 2010-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810235553XA Active CN101463296B (en) | 2008-11-28 | 2008-11-28 | Microelectronic device cleaning agent |
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| CN (1) | CN101463296B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011128A (en) * | 2010-12-30 | 2011-04-13 | 上海大学 | Cleaning agent composite used after computer hard disk substrate polishing |
| CN103242980A (en) * | 2013-04-08 | 2013-08-14 | 安徽豪杰塑胶制品有限公司 | Washing and grinding immersion liquid for latex gloves |
| CN103555479A (en) * | 2013-11-11 | 2014-02-05 | 镇江苏惠乳胶制品有限公司 | Washing and grinding immersion liquid for latex gloves |
| CN103589544A (en) * | 2013-11-12 | 2014-02-19 | 镇江苏惠乳胶制品有限公司 | Cleaning solution of latex gloves and preparation method thereof |
| CN104388216A (en) * | 2014-11-14 | 2015-03-04 | 无锡信大气象传感网科技有限公司 | Electronic element cleaning agent and preparation method thereof |
| CN105349270A (en) * | 2015-12-03 | 2016-02-24 | 苏州鑫德杰电子有限公司 | Nonaqueous electronic cleaning agent and preparation method thereof |
| CN106244349A (en) * | 2016-07-07 | 2016-12-21 | 如皋市大昌电子有限公司 | A kind of cleanout fluid being applicable to diode |
| CN107574025A (en) * | 2017-03-24 | 2018-01-12 | 卓聪（上海）环保科技发展有限公司 | A kind of network communication equipment conserves cleaning agent and preparation method thereof online |
| CN108034956A (en) * | 2017-12-12 | 2018-05-15 | 广州旭淼新材料科技有限公司 | A kind of neutrality environment-friendly rust remover and preparation method thereof |
-
2008
- 2008-11-28 CN CN200810235553XA patent/CN101463296B/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011128A (en) * | 2010-12-30 | 2011-04-13 | 上海大学 | Cleaning agent composite used after computer hard disk substrate polishing |
| CN102011128B (en) * | 2010-12-30 | 2012-07-04 | 上海大学 | Cleaning agent composite used after computer hard disk substrate polishing |
| CN103242980A (en) * | 2013-04-08 | 2013-08-14 | 安徽豪杰塑胶制品有限公司 | Washing and grinding immersion liquid for latex gloves |
| CN103555479A (en) * | 2013-11-11 | 2014-02-05 | 镇江苏惠乳胶制品有限公司 | Washing and grinding immersion liquid for latex gloves |
| CN103555479B (en) * | 2013-11-11 | 2016-01-20 | 镇江苏惠乳胶制品有限公司 | A kind of emgloves wash mill immersion liquid |
| CN103589544A (en) * | 2013-11-12 | 2014-02-19 | 镇江苏惠乳胶制品有限公司 | Cleaning solution of latex gloves and preparation method thereof |
| CN104388216A (en) * | 2014-11-14 | 2015-03-04 | 无锡信大气象传感网科技有限公司 | Electronic element cleaning agent and preparation method thereof |
| CN105349270A (en) * | 2015-12-03 | 2016-02-24 | 苏州鑫德杰电子有限公司 | Nonaqueous electronic cleaning agent and preparation method thereof |
| CN106244349A (en) * | 2016-07-07 | 2016-12-21 | 如皋市大昌电子有限公司 | A kind of cleanout fluid being applicable to diode |
| CN107574025A (en) * | 2017-03-24 | 2018-01-12 | 卓聪（上海）环保科技发展有限公司 | A kind of network communication equipment conserves cleaning agent and preparation method thereof online |
| CN107574025B (en) * | 2017-03-24 | 2020-07-10 | 卓聪（上海）环保科技发展有限公司 | Online maintenance cleaning agent for network communication equipment and preparation method thereof |
| CN108034956A (en) * | 2017-12-12 | 2018-05-15 | 广州旭淼新材料科技有限公司 | A kind of neutrality environment-friendly rust remover and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101463296B (en) | 2010-11-03 |
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