CN101459213A - Manufacturing method for LED and LED manufactured thereby - Google Patents
Manufacturing method for LED and LED manufactured thereby Download PDFInfo
- Publication number
- CN101459213A CN101459213A CNA2007103021194A CN200710302119A CN101459213A CN 101459213 A CN101459213 A CN 101459213A CN A2007103021194 A CNA2007103021194 A CN A2007103021194A CN 200710302119 A CN200710302119 A CN 200710302119A CN 101459213 A CN101459213 A CN 101459213A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- groove
- silicon wafer
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a manufacturing method of a light-emitting diode and a light-emitting diode manufactured thereby. The manufacturing method comprises steps of providing a silicon wafer with groove arrays on the surface, arranging two notches penetrating through the silicon wafer in each groove, reversely mounting a light-emitting diode chip in each groove and covering electrodes of the light-emitting diode chip at the notches, arranging a protective layer flattening the upper surface in each groove to cover the light-emitting diode chip, forming a metal layer which is electrically connected with the electrodes via the notches on the lower surface of the silicon wafer, patterning the metal layer to form metal wires to electrically connect to the electrodes, cutting the silicon wafer into a plurality of silicon bases comprising at least one groove, and forming a fluorescent coating on the upper surface of the protective layer.
Description
Technical field
The present invention relates to a kind of manufacture method of light-emitting diode, relate in particular to a kind of manufacture method with light-emitting diode of even fluorescence coating, and the light-emitting diode of making by this method.
Background technology
(Light emitting diode LED) has that reaction speed is fast, the life-span is long to light-emitting diode, and advantage such as volume is little, can be widely used in various indicating devices to use as light source.Along with the successful research and development of white light emitting diode and the lifting of luminous efficiency thereof, light-emitting diode also comes into one's own gradually in the application in general lighting (general lighting) field.
Referring to Fig. 1, in order to improve luminous efficiency, No. 20050274959 U.S. Patent Publication a kind of High Power LED, it introduces silicon pedestal (silicon submount) 402, be used to carry light-emitting diode chip for backlight unit 401, and supply light-emitting diode chip for backlight unit 401 to be electrically connected with silicon pedestal 402 formation in flip-chip bonded (flipchip bonding) mode, and silicon pedestal 402 is located on the radiating seat 409, the electrode of silicon pedestal 402 is electrically connected with outer electrode 406a, the 406b of radiating seat 409 by bonding wire 412a, 412b.
Yet,, need usually inject in a glue mode if will in the groove of the silicon pedestal 402 of this light-emitting diode, add fluorescent material (phosphor).But owing in gluing process, be difficult to control the uniformity of fluorescent material, thereby cause the inhomogeneous of whole lumination of light emitting diode easily.In addition, because the silicon pedestal 402 of above-mentioned light-emitting diode need be electrically connected with outer electrode 406a, 406b in wire-bonded (wire bonding) mode, thereby be difficult to adapt to existing surface mount commonly used (surface mount) technology.
Summary of the invention
Therefore the object of the present invention is to provide a kind of manufacture method that has even fluorescence coating and be applicable to the light-emitting diode of surface mount process, and the light-emitting diode of making by this method.
For reaching above-mentioned purpose, according to the manufacture method of light-emitting diode provided by the invention, comprise the following steps: to provide Silicon Wafer, described Silicon Wafer has upper surface and lower surface; Upper surface at described Silicon Wafer forms the groove array that comprises a plurality of grooves; In each described groove, form two breach that run through described Silicon Wafer; With a plurality of light-emitting diode chip for backlight unit respectively upside-down mounting be installed in each described groove, and two electrode pairs of each described light-emitting diode chip for backlight unit should be covered on the described breach; The protective layer that covers each described light-emitting diode chip for backlight unit and have smooth upper surface is set in each described groove; Lower surface at described Silicon Wafer forms metal level, and described metal level is electrically connected with described electrode respectively by described breach; Described metal level is carried out patterning, to form the metal lead wire that a plurality of difference are electrically connected with described electrode independently; Described Silicon Wafer is cut into a plurality of silicon pedestals that comprise at least one described groove; And form fluorescence coating at the upper surface of described protective layer.
In addition, the present invention also provides more than one to state the light-emitting diode that manufacture method makes, and comprising: silicon pedestal, have upper surface and lower surface, and described upper surface is formed with at least one groove, and described bottom portion of groove is formed with two breach that run through described silicon pedestal; Light-emitting diode chip for backlight unit, upside-down mounting are installed on described groove, and described light-emitting diode chip for backlight unit has two correspondences and is covered on electrode on the described breach; Protective layer is located in the described groove and is covered described light-emitting diode chip for backlight unit and have smooth upper surface; Two strip metals lead-in wire passes through described breach independently by the lower surface difference of described silicon pedestal and is electrically connected with described electrode; And fluorescence coating, be formed at the upper surface of described protective layer.
The present invention can form the fluorescence coating of consistency of thickness thereon by the smooth upper surface of protective layer is provided, to improve the uniformity of luminance of light-emitting diode.And the metal lead wire that passes through the through-silicon pedestal and extend along the silicon pedestal lower surface, make silicon pedestal can utilize existing surface mount process commonly used to be electrically connected with outer electrode.
Description of drawings
Fig. 1 is the cutaway view of known light-emitting diode;
Fig. 2 is the flow chart of the manufacture method of light-emitting diode according to a preferred embodiment of the invention;
Fig. 3 A to Fig. 3 G is the cutaway view of corresponding diagram 2 steps;
Fig. 4 is a kind of electrode configuration of light-emitting diode chip for backlight unit;
Fig. 5 is the another kind of electrode configuration of light-emitting diode chip for backlight unit.
[primary clustering symbol description]
＜prior art 〉
Light-emitting diode chip for backlight unit 401 silicon pedestals 402
Outer electrode 406a, 406b bonding wire 412a, 412b
Radiating seat 409
＜the present invention 〉
Silicon Wafer 300 silicon pedestal 300a
Groove 301 breach 302
Light-emitting diode chip for backlight unit 310 electrodes 311,312
Embodiment
Referring to Fig. 2, it is the flow chart of the manufacture method of High Power LED according to the preferred embodiment of the invention, and this manufacture method comprises the following steps:
Step 200 at first, provides Silicon Wafer 300, and Silicon Wafer 300 can be selected the Silicon Wafer of brilliant material of heap of stone for use, and it has upper surface and lower surface.Step 202 (cooperating referring to Fig. 3 A), with anisotropic etching, at the upper surface formation groove array of Silicon Wafer 300, this groove array comprises a plurality of with the spaced groove 301 of array format.Anisotropic etching can utilize potassium hydroxide (KOH), or tetramethyl ammonium hydroxide etching solutions such as (TMAH) carries out.The degree of depth of each groove 301 is 100-400 μ m, and the side face of each groove 301 is the 45-75 degree with respect to the angle theta of groove 301 bottom surface normals.
Step 204 (cooperating referring to Fig. 3 B) is in each groove 301 bottom, to puncture the breach 302 that (punchingthrough) or laser drill (Laser drilling) mode forms two downward through-silicon wafers 300.
Step 206 (cooperation) referring to Fig. 3 C, a plurality of light-emitting diode chip for backlight unit 310 are provided, each light-emitting diode chip for backlight unit 310 is arranged on each groove 301 bottom in the upside-down mounting mode, makes the corresponding respectively top that is covered on two breach 302 of two electrodes 311,312 of light-emitting diode chip for backlight unit 310.Light-emitting diode chip for backlight unit 310 can be the blue light-emitting diode of gallium nitride based (GaN-based), and two electrode 311,312 is positioned at the below homonymy of chip 310.And some glue is provided with the protective layer 320 of covering luminousing diode chip 310 in each groove 301, and makes protective layer 320 have the smooth upper surface concordant with Silicon Wafer 300 upper surfaces.Protective layer 320 can utilize silicones (silicone) to carry out single or multiple lift gradation coating, and can change whole refractive index by adjusting its composition and process conditions, forms refractive index match (index matching) with light-emitting diode chip for backlight unit 310 thus.Wherein, two kinds of configuration modes of the electrode 311,312 of light-emitting diode chip for backlight unit 310 are respectively as Fig. 4 and shown in Figure 5, and wherein the mode of Fig. 5 can more effectively increase the luminous efficiency of chip 310.
Step 208 (cooperating referring to Fig. 3 D) forms metal level 330 in Silicon Wafer 300 lower surfaces deposition, and metal level 330 forms with two electrodes 311,312 of light-emitting diode chip for backlight unit 310 respectively by two breach 302 and is electrically connected.In the present embodiment, metal level 330 is a double-decker, comprises chromium (Cr) layer that is formed on Silicon Wafer 300 lower surfaces earlier, and copper (Cu) layer that is formed on chromium layer lower surface subsequently.The formation method of chromium layer and copper layer can utilize known plating or physical vapour deposition (PVD) to carry out.
Step 210 (cooperating referring to Fig. 3 E) is carried out patterning to metal level 330, to obtain the metal lead wire 331 that a plurality of difference are electrically connected with two electrodes 311,312 of each light-emitting diode chip for backlight unit 310 independently.Wherein, the method for patterning is carried out with known little shadow and etch process.
Step 212 is cut into a plurality of silicon pedestal 300a shown in Fig. 3 F with Silicon Wafer 300, and the silicon pedestal 300a of present embodiment comprises a groove 301, during practical application, also can comprise a plurality of grooves 301 according to luminous demand.
Step 214 (cooperating referring to Fig. 3 G) is at the upper surface formation fluorescence coating 340 of protective layer 320.According to the preferred embodiments of the present invention, fluorescence coating 322 forms the upper surface that fluorescent glue is coated on protective layer 320 by using scraper.Fluorescent glue can be formed by silicones and fluorescent material allotment.Because protective layer 320 has the smooth upper surface that is provided with for fluorescence coating 322, therefore can obtain the fluorescence coating 322 of consistency of thickness, make whole light-emitting diode have more uniform photochromic conversion effect.
Light-emitting diode in above-mentioned two preferred embodiments of the present invention because protective layer 320 has smooth upper surface, thereby can form the fluorescence coating 322 of consistency of thickness thereon, thereby improves the uniformity of lumination of light emitting diode.
In addition, by light-emitting diode chip for backlight unit 310 through-silicon pedestal 300a and along the metal lead wire 331 that silicon pedestal 300a lower surface extends, metal lead wire 331 can be electrically connected with outer electrode with existing surface mount process commonly used.
The foregoing description for explanation the present invention's usefulness, and is not a limitation of the present invention only, those skilled in the art under the premise without departing from the spirit and scope of the present invention, the various equivalent structures of being made change all within the scope of the present invention.Protection scope of the present invention is defined by the claims.
Claims (15)
1. the manufacture method of a light-emitting diode comprises the following steps:
Silicon Wafer is provided, and described Silicon Wafer has upper surface and lower surface;
Upper surface at described Silicon Wafer forms the groove array that comprises a plurality of grooves;
In each described groove, form two breach that run through described Silicon Wafer;
With a plurality of light-emitting diode chip for backlight unit respectively upside-down mounting be installed in each described groove, and two electrode pairs of each described light-emitting diode chip for backlight unit should be covered on the described breach;
The protective layer that covers each described light-emitting diode chip for backlight unit and have smooth upper surface is set in each described groove;
Lower surface at described Silicon Wafer forms metal level, and described metal level is electrically connected with described electrode respectively by described breach;
Described metal level is carried out patterning, to form the metal lead wire that a plurality of difference are electrically connected with described electrode independently;
Described Silicon Wafer is cut into a plurality of silicon pedestals that comprise at least one described groove; And
Upper surface at described protective layer forms fluorescence coating.
2. manufacture method as claimed in claim 1, wherein said groove forms in the anisotropic etching mode.
3. manufacture method as claimed in claim 2, wherein making each described depth of groove is 100-400 μ m, and the side face that makes each described groove is the 45-75 degree with respect to the angle of the normal of described groove floor.
4. manufacture method as claimed in claim 1, wherein said breach are to puncture or the mode of laser drill forms.
5. manufacture method as claimed in claim 1 wherein makes the upper surface of described protective layer concordant with the upper surface of described Silicon Wafer.
6. manufacture method as claimed in claim 5, wherein said protective layer carries out multi-layer coated with silicones.
7. manufacture method as claimed in claim 1, wherein said metal level comprise the chromium layer of the lower surface that is formed at described Silicon Wafer earlier, and the copper layer that is formed at described chromium layer lower surface.
8. manufacture method as claimed in claim 1, the formation of wherein said metal level is carried out with plating or physical vapour deposition (PVD) mode.
9. manufacture method as claimed in claim 8, the patterning of wherein said metal level carries out with little shadow and etching mode.
10. manufacture method as claimed in claim 1, wherein said fluorescence coating forms with the fluorescent glue coating.
11. a light-emitting diode comprises:
Silicon pedestal has upper surface and lower surface, and described upper surface is formed with at least one groove, and described bottom portion of groove is formed with two breach that run through described silicon pedestal;
Light-emitting diode chip for backlight unit, upside-down mounting are installed in the described groove, and described light-emitting diode chip for backlight unit has two correspondences and is covered on electrode on the described breach;
Protective layer is located in the described groove and is covered described light-emitting diode chip for backlight unit and have smooth upper surface;
Two strip metals lead-in wire passes through described breach independently by the lower surface difference of described silicon pedestal and is electrically connected with described electrode; And
Fluorescence coating is formed at the upper surface of described protective layer.
12. light-emitting diode as claimed in claim 11, wherein each described depth of groove is 100-400 μ m, and the side face of each described groove is the 45-75 degree with respect to the angle of described groove floor normal.
13. light-emitting diode as claimed in claim 11, the upper surface of wherein said protective layer is concordant with the upper surface of described silicon pedestal.
14. light-emitting diode as claimed in claim 13, wherein said protective layer are the multilayer silicone layer, and each layer silicone layer has different refractive indexes to reach refractive index match.
15. light-emitting diode as claimed in claim 11, wherein said metal level comprise the chromium layer of the lower surface that is formed at described silicon pedestal earlier, and the copper layer that is formed at described chromium layer lower surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103021194A CN101459213A (en) | 2007-12-14 | 2007-12-14 | Manufacturing method for LED and LED manufactured thereby |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103021194A CN101459213A (en) | 2007-12-14 | 2007-12-14 | Manufacturing method for LED and LED manufactured thereby |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101459213A true CN101459213A (en) | 2009-06-17 |
Family
ID=40769935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007103021194A Pending CN101459213A (en) | 2007-12-14 | 2007-12-14 | Manufacturing method for LED and LED manufactured thereby |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101459213A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222667A (en) * | 2011-07-14 | 2011-10-19 | 东莞市邦臣光电有限公司 | LED (light-emitting diode) light source module and packaging process thereof |
-
2007
- 2007-12-14 CN CNA2007103021194A patent/CN101459213A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222667A (en) * | 2011-07-14 | 2011-10-19 | 东莞市邦臣光电有限公司 | LED (light-emitting diode) light source module and packaging process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100539218C (en) | Be used to install the sub-mount and the luminescent device encapsulation of luminescent device | |
| TWI677977B (en) | LED unit, image display element and manufacturing method thereof | |
| TWI545808B (en) | Producing method of light emitting element transfer sheet, producing method of light emitting device, light emitting element transfer sheet, and light emitting device | |
| EP1769541B1 (en) | Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device | |
| US8206999B2 (en) | Chip-type LED and method for manufacturing the same | |
| TWI360900B (en) | Semiconductor light emitting device, lighting modu | |
| JP5052326B2 (en) | Chip component type LED and manufacturing method thereof | |
| CN101755347B (en) | Light-emitting device and manufacture method thereof | |
| TWI479677B (en) | Light emitting diode package structure | |
| CN101728470B (en) | Light-emitting diode device and method for fabricating the same | |
| CN103477456A (en) | Light emitting device having wavelength converting layer | |
| US20100127294A1 (en) | Side view type light-emitting diode package structure, and manufacturing method and application thereof | |
| CN104981915A (en) | Light-emitting module | |
| CN101442095B (en) | White led chip and manufacture method thereof | |
| US7811843B1 (en) | Method of manufacturing light-emitting diode | |
| CN104916754A (en) | Semiconductor light emitting device | |
| EP2355196A2 (en) | Light emitting device package, method of manufacturing the same, and lighting system | |
| US20170338381A1 (en) | Light-emitting-device package and production method therefor | |
| CN108630673A (en) | The manufacturing method of light-emitting device and light-emitting device | |
| JP2013258399A (en) | Led light source module and method of manufacturing the same | |
| CN101393950A (en) | Flip encapsulation manufacturing method for LED | |
| US11843078B2 (en) | Light emitting device with good visibility | |
| CN102800800A (en) | Light-emitting diode device and production method thereof | |
| CN1889278A (en) | Method for raising chip brightness | |
| CN103262268A (en) | Composite substrate, semiconductor chip having composite substrate and method for producing composite substrates and semiconductor chips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090617 |