CN101458293A - Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector - Google Patents
Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector Download PDFInfo
- Publication number
- CN101458293A CN101458293A CNA2008102046659A CN200810204665A CN101458293A CN 101458293 A CN101458293 A CN 101458293A CN A2008102046659 A CNA2008102046659 A CN A2008102046659A CN 200810204665 A CN200810204665 A CN 200810204665A CN 101458293 A CN101458293 A CN 101458293A
- Authority
- CN
- China
- Prior art keywords
- laser
- damage
- district
- ion
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method for detecting the damage degree of an HgCdTe infrared detector ion-implanted region. Based on the principle that light current is caused by the damage of ion-implanted n region under intense laser irradiation, an anomalous current signals under intense laser irradiation are obtained by adopting phase sensitive detection technology (a lock-in amplifier plus a mechanical chopper), regular laser beam induced current signals under low laser intensity are eliminated and the rest is the light current caused by the damage of ion-implanted n region. The light current can be regarded as a standard of judging the damage of samples. The method has the advantage that the effects of damage on photoelectric response can be directly detected through a photoelectric process that is totally identical with a detection process.
Description
Technical field
The present invention relates to the detection technique of infrared eye, specifically be meant a kind of degree of injury method that detects the ion-implantation Tellurium-cadmium-mercury infrared eye.
Background technology
Mercury cadmium telluride (HgCdTe) infrared eye has important use to be worth in military affairs and space industry, requires also very high to device performance.And extensively adopt ion implantation to form the n district in the infrared eye, and the damage that the ion injection brings has certain distribution, it has been generally acknowledged that ion injects the electron concentration that forms and just reaches maximal value at certain depth, and the superficial layer electron concentration is less, this can produce the photoelectric properties of device and have a strong impact on, and has limited its application.Therefore the degree of injury that detects in the ion-implantation Tellurium-cadmium-mercury photovoltaic detector just becomes particularly important.
The damage of ion-implantation Tellurium-cadmium-mercury photovoltaic infrared eye pn knot intermediate ion injection zone in photoelectric response is the performance boost problem that detector is extremely paid close attention to, whether people need to anneal and eliminate such damage a lot of researchs were arranged for this reason, but do not form final conclusion.For the good method of the present neither one of the detection of this zone faulted condition, but people are starved of the information of this damage again on optimised devices preparation technology, our method is exactly a kind of information that this damage can be provided, and be the method that a kind of and the identical photoelectric process of detector detection process reflect degree of injury, so be the direct detecting method of damage, there are not other similar methods at present for the photoelectric response influence.
Summary of the invention
The objective of the invention is to propose a kind of method that detects the degree of injury of ion-implantation Tellurium-cadmium-mercury infrared eye, this method is to carry out a kind of damage that device technology optimization needs most detection method to the device performance influence, and can reach the spatial resolution of sub-micron to final photosensitive unit.
Concrete technical scheme of the present invention is as follows:
1. the test electrode of drawing laser beam induced current (LBIC) from two ends, sample p district is put into Dewar with sample, regulates that by liquid nitrogen and temperature controller sample is under the lower temperature.
2. regulate Dewar 5 positions by two-dimentional little mobile platform 6, under high power objective 4 and 3 observations of CCD camera, laser focusing is located to the pn knot sample place in the Dewar, make sweep trace along the sample center line.
3. laser power is transferred gradually greatly and beats on sample, in conjunction with phase-sensitive detection technology (lock-in amplifier+mechanical chopper), recording laser when the sample center line scans electric current and the relation curve of position.After laser increased to certain power, the current value that obtains no longer increased along with laser intensity is significantly linear, has promptly reached the maximal value of conventional laser bundle induced current signal.
4. on this basis, continue to increase laser power, when laser radiation during in the n district that ion injects, at the less zone (n of superficial layer electron concentration
-The district) produce higher photoproduction carrier concentration, these photo-generated carrier parts are blocked in n by lattice scattering
-The district, some scattering that can overcome lattice stops, is diffused into the higher n of electron concentration
+The district forms and the opposite n of pn junction current direction
+n
-The electric current of knot the linear of abnormality can occur on the current curve in the n district that at this moment corresponding ion injects.
5. on the anomalous curve basis that this causes than light laser, remove the signal of the conventional laser bundle induced current under the low laser intensity, the remaining ion that is injects the photocurrent that the damage of n district causes, can be used as the standard of judgement sample intermediate ion implant damage, concrete is exactly that this remaining photocurrent maximal value is big more, and the expression ion implantation damage is serious more.
The advantage of patent of the present invention is:
1. the damage of ion-implantation Tellurium-cadmium-mercury photovoltaic infrared eye pn knot intermediate ion injection zone in photoelectric response is the performance boost problem that detector is extremely paid close attention to, whether people need to anneal and eliminate such damage a lot of researchs were arranged for this reason, but do not form final conclusion.For the good method of the present neither one of the detection of this zone faulted condition, but people are starved of the information of this damage again on optimised devices preparation technology, our method is exactly a kind of information that this damage can be provided, and be the method that a kind of and the identical photoelectric process of detector detection process reflect degree of injury, so be the direct detecting method of damage, there are not other similar methods at present for the photoelectric response influence;
2. this method can be carried out the microcell measurement on the basis that has formed final photosensitive unit, and spatial resolution is to be determined by the visible light laser spot sizes, can reach the spatial resolution of sub-micron for this reason, so the damage that provides is to obtain after having comprised the influence that all process procedures bring to device for the influence of device photoelectric response performance, this also is to carry out a kind of damage that device technology optimization needs most detection method to the device performance influence, does not have other similar approach can reach such effect at present;
Description of drawings
Fig. 1 is mercury cadmium telluride structures of samples figure to be measured.
Fig. 2 is for detecting the experimental provision synoptic diagram that adopts;
1. laser instruments among the figure, 2. chopper, 3.CCD camera, 4. high power objective, 5. Dewar, 6. two-dimentional little mobile platform, 7. lock-in amplifier, 8. temperature controller, 9. stepping platform controller, 10. computing machine.
Fig. 3 is the photoelectricity flow graph of Te-Cd-Hg photovoltaic device array under the different laser intensities.
Fig. 4 injects the photocurrent that the damage of n district causes for ion.
Embodiment
In conjunction with the accompanying drawings the specific embodiment of the present invention is described in further detail below by embodiment.
This example is observed by the high power objective 4 and the CCD camera 3 of micro--Raman spectrometer, with laser focusing in undersized pn interface, move by sample in the Dewar 5 on the two-dimentional little mobile platform 6 of stepping platform controller 9 drives, make laser beam along the scanning of pn knot center line, p district test electrode by two far-ends is drawn current signal, lock-in amplifier 7 is read faint current signal, self-compiling program is handled the degree of injury that obtains ion implanted region to data at last with the data of writing scan walking and electric current.
Concrete steps are as follows:
1. testing sample is the Te-Cd-Hg photovoltaic device array, draws the electrode of two far-ends from sample edge p section bar material upper surface, as shown in Figure 1.Sample is put into Dewar 5, Dewar is vacuumized, irritate liquid nitrogen.
2. Dewar 5 is placed on two-dimentional little mobile platform 6 that the walking precision is 0.1 μ m, test electrode is wired to the 2tol converter by BNC, converter is wired on the phase-locked A interface by BNC, chopper 2 is received phase-locked with reference to the input port by the BNC wiring, stepping platform controller 9 places manual, phase-locked receiving on computing machine 10 the corresponding interface.The device of experiment as shown in Figure 2.
3. open spectrometer and observe the computer program Labspec of usefulness, occur the enlarged image of measured device at main window.Regulate the focusing spiral under two-dimentional little mobile platform 6, transfer to clear picture.Manual adjustments stepping platform controller 9 and Dewar 5 make step-scan x axle along sample wire array AB direction shown in Figure 1.Move on to place, pn knot place, close white light, open lasing light emitter, open the laser attenuation sheet, see the laser focusing situation, be adjusted to luminous point for minimum.
4. make temperature stabilization at 120K by temperature controller 8.Chopper 2 is put into light path, and it is 1723Hz that frequency is set, and can not be the multiple of ac frequency 50Hz, in order to avoid the low current signal that has the AC noise influence to measure.It is D1 that the laser attenuation sheet is set, and makes laser intensity reach 1 * 10
4W/cm
2, mobile stepping platform controller 9 changes laser and beats position on sample, and how many maximal values of observing phase-locked output current is, sets range according to this value, makes maximum current greater than half of range, and the current value that obtains like this is comparatively accurate.
5. make stepping platform controller 9 be in automatic transmission, the service data capture program.Select the direction of scanning along the scanning of x axle, the computer expert crosses the control mouth makes two-dimentional little mobile platform 6 move along the x axle, and the platform mobile accuracy can be reached for 0.1 μ m, can satisfy the measurement requirement in undersized pn interface like this.
6. it is undamped that laser is set, and makes laser intensity reach 1 * 10
5W/cm
2, equally determine suitable range with step 4, judge and regulate two-dimentional little mobile platform 6 that laser is beaten in position and the step 5 on sample is the same according to the reading of stepping platform controller 9, make stepping platform controller 9 be in automatic transmission, the service data capture program.Select the direction of scanning to scan along the x axle.
7. after measuring, the data of gathering in the computer have four row, are respectively the position, the x of the current value of phase-locked output, r, θ.Adopt first row and the mapping of secondary series data, the figure that obtains is that temperature is 120K, and laser power is 1 * 10
4W/cm
2With 1 * 10
5W/cm
2Electric current as shown in Figure 3.Laser power is 1 * 10
4W/cm
2Electric current represent the curve of desirable pn knot, be the minimax value that occurs electric current in pn junction boundary place correspondence, and laser power is 1 * 10
5W/cm
2Current curve be the photocurrent that causes of n district damage and the stack of pn knot photocurrent, difference between the two is clearly.
8. according to two curves among Fig. 3, they are done difference, the curve that obtains as shown in Figure 4.What therefore Fig. 4 represented is exactly to inject the photocurrent that the damage of n district causes by ion.This difference can be used as the standard of damaging in the judgement sample, and the maximal value of difference is big more, and the expression damage is serious more.
Claims (1)
1. a cadmium-telluride-mercury infrared detector ion injects the detection method of n district damage, it utilizes the micro-meter scale laser facula to excite photovoltaic device n district to produce photo-generated carrier, and damage the photocurrent that forms by the n district and obtain damage feature, it is characterized in that: the concrete steps of this detection method are as follows:
A. draw the test electrode of laser beam induced current from two ends, sample p district, sample is put into Dewar, regulate that by liquid nitrogen and temperature controller sample is under the lower temperature;
B. regulate Dewar (5) position by two-dimentional little mobile platform (6), under high power objective (4) and CCD camera (3) observation, laser focusing is located to the pn knot sample place in the Dewar, make sweep trace along the sample center line;
C. laser power is transferred gradually greatly and beat on sample, in conjunction with phase-sensitive detection technology (lock-in amplifier+mechanical chopper), recording laser when the sample center line scans electric current and the relation curve of position, after laser increases to certain power, the current value that obtains no longer increases along with laser intensity is significantly linear, has promptly reached the maximal value of conventional laser bundle induced current signal;
D. on this basis, continue to increase laser power, when laser radiation during in the n district that ion injects, at the less zone (n of superficial layer electron concentration
-The district) produce higher photoproduction carrier concentration, some scattering that can overcome lattice of these photo-generated carriers stops, is diffused into the higher n of electron concentration
+The district forms and the opposite n of pn junction current direction
+n
-The electric current of knot the linear of abnormality can occur on the current curve in the n district that at this moment corresponding ion injects;
E. on the anomalous curve basis that this light laser causes, remove the signal of the laser beam induced current of the routine under the low laser intensity, the remaining ion that is injects the photocurrent that the damage of n district causes, can be used as the standard of judgement sample intermediate ion implant damage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102046659A CN101458293B (en) | 2008-12-16 | 2008-12-16 | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102046659A CN101458293B (en) | 2008-12-16 | 2008-12-16 | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101458293A true CN101458293A (en) | 2009-06-17 |
| CN101458293B CN101458293B (en) | 2010-11-17 |
Family
ID=40769272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102046659A Expired - Fee Related CN101458293B (en) | 2008-12-16 | 2008-12-16 | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101458293B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928194A (en) * | 2012-10-22 | 2013-02-13 | 中国科学院上海技术物理研究所 | Method for extracting ion-implanted region trap concentration data of infrared focal plane detector |
| CN103267939A (en) * | 2013-05-22 | 2013-08-28 | 上海电力学院 | Method for detecting quality of electrode of photovoltaic mercury cadmium telluride infrared detector |
| CN110132939A (en) * | 2019-06-12 | 2019-08-16 | 江苏省特种设备安全监督检验研究院 | A kind of confocal-photoelectric current test macro |
| CN111307418A (en) * | 2019-12-05 | 2020-06-19 | 中国科学院新疆理化技术研究所 | Low-temperature irradiation test method based on proton displacement effect of infrared detector |
-
2008
- 2008-12-16 CN CN2008102046659A patent/CN101458293B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928194A (en) * | 2012-10-22 | 2013-02-13 | 中国科学院上海技术物理研究所 | Method for extracting ion-implanted region trap concentration data of infrared focal plane detector |
| CN103267939A (en) * | 2013-05-22 | 2013-08-28 | 上海电力学院 | Method for detecting quality of electrode of photovoltaic mercury cadmium telluride infrared detector |
| CN103267939B (en) * | 2013-05-22 | 2015-12-23 | 上海电力学院 | A kind of method detecting photovoltaic type cadmium-telluride-mercury infrared detector electrode quality |
| CN110132939A (en) * | 2019-06-12 | 2019-08-16 | 江苏省特种设备安全监督检验研究院 | A kind of confocal-photoelectric current test macro |
| CN111307418A (en) * | 2019-12-05 | 2020-06-19 | 中国科学院新疆理化技术研究所 | Low-temperature irradiation test method based on proton displacement effect of infrared detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101458293B (en) | 2010-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8896338B2 (en) | Electrical characterization of semiconductor materials | |
| EP2404179B1 (en) | High speed quantum efficiency measurement apparatus utilizing solid state lightsource | |
| JP6594892B2 (en) | Image sensor, inspection system and method for inspecting product | |
| US20100060307A1 (en) | Electrical Characterization of Semiconductor Materials | |
| CN101458293B (en) | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector | |
| Hinken et al. | Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers | |
| US20130169957A1 (en) | Enhanced high-speed logarithmic photo-detector for spot scanning system | |
| TW201621963A (en) | Scanning electron microscope and methods of inspecting and reviewing samples | |
| US9880200B2 (en) | Method and apparatus for non-contact measurement of forward voltage, saturation current density, ideality factor and I-V curves in P-N junctions | |
| US8958076B2 (en) | Surface shape measuring apparatus | |
| KR20210057203A (en) | Deep Learning-based Adaptive Region of Interest for Measuring Critical Dimensions of Semiconductor Substrates | |
| Bajaj et al. | Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy | |
| Kaes et al. | Light‐modulated lock‐in thermography for photosensitive pn‐structures and solar cells | |
| US9261464B2 (en) | Applying edge-on photoluminescence to measure bulk impurities of semiconductor materials | |
| Wang et al. | Direct correlation of defects and dark currents of InGaAs/InP photodetectors | |
| Stemmer | Mapping of the local minority carrier diffusion length in silicon wafers | |
| CN101377533A (en) | Method for detecting mercury cadmium telluride photovoltaic detector deep energy level defect | |
| KR19990078175A (en) | Method for nondestructive measurement of dopant concentrations and profiles in the drift region of certain semiconductor devices | |
| US4501966A (en) | Infrared microscope inspection apparatus | |
| O'Connor | Spot scan probe of lateral field effects in a thick fully-depleted CCD | |
| CN102928194A (en) | Method for extracting ion-implanted region trap concentration data of infrared focal plane detector | |
| Meishoku et al. | Development of the single ion beam induced charge (SIBIC) imaging technique using the single ion microprobe system | |
| Santamaria et al. | Challenges of Aerial Drone Electroluminescence in Solar Photovoltaic Field Inspections | |
| JP4036713B2 (en) | Nondestructive inspection equipment | |
| Yinghui et al. | Crosstalk of HgCdTe LWIR n-on-p diode arrays |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101117 Termination date: 20121216 |