CN102928194A - Method for extracting ion-implanted region trap concentration data of infrared focal plane detector - Google Patents
Method for extracting ion-implanted region trap concentration data of infrared focal plane detector Download PDFInfo
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- CN102928194A CN102928194A CN2012104055023A CN201210405502A CN102928194A CN 102928194 A CN102928194 A CN 102928194A CN 2012104055023 A CN2012104055023 A CN 2012104055023A CN 201210405502 A CN201210405502 A CN 201210405502A CN 102928194 A CN102928194 A CN 102928194A
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Abstract
The invention discloses a method for extracting ion-implanted region trap concentration data of an infrared focal plane detector. The method comprises the following steps of: performing one-dimensional linear scanning on a pn junction photosensitive element array based on the principle that a photon-generated carrier is generated on a tellurium-cadmium-mercury material through laser irradiation, diffused to a pn junction formed among an ion-implanted n region, a mercury interstitial diffusion region and a p absorption region and separated by a junction electric field so as to form a photocurrent signal, and obtaining a relation curve between the current and position under different temperature conditions, wherein the curve has two pairs of photocurrent peaks, and the distance between peaks of the curve refers to the junction region width of a photosensitive element and the position of the pn junction; and combining numerical simulation, and extracting and obtaining the effective trap concentration of the ion-implanted region at different temperatures. The method has significance for judging the quality of materials in the ion-implanted region of a long-wave tellurium-cadmium-mercury infrared detector.
Description
Technical field
The present invention relates to the detection technique of infrared eye characteristic parameter, specifically refer to a kind of method of extracting the ion implanted region trap data of HgCdTe infrared focal plane detector photaesthesia chip array.
Background technology
Cadmium-telluride-mercury infrared detector has important using value in military surveillance, spacer remote sensing field, requires also very high to device performance.The plane cadmium-telluride-mercury infrared detector generally adopts Implantation to form the n district, but the implantation affiliation causes a large amount of damage in mercury cadmium telluride n district, the trap that forms in the photosensitive unit district of device.Trap can not only form dark current in the mode of the auxiliary tunnelling of trap, and can form the compound photo-generated carrier in recombination center, thereby greatly reduces quantum efficiency and the detector of device.Obtain under the different temperatures accurately effectively that (ionization) trap distributes, the judgement of cadmium-telluride-mercury infrared detector (especially long wave device) performance quality is had very important significance.And when the mercury cadmium telluride Long Wave Infrared Probe designed, if the inaccurate words of design load of the ion implanted region trap of photaesthesia chip array, the detector characteristic that calculates will serious departing from occur with experiment value.So the ion implanted region trap that the photaesthesia chip array is obtained in experiment has very important significance.
At present, the infrared eye damage that ion implantation technology is formed has had certain research.There is article to report that thermal treatment and plasma hydrogen passivation etc. partly repair infrared eye damage, to improve the photoelectric properties of detector.And conventional differential Hall test can be tested in order to the trap characteristic parameter that damage causes.But the test of differential Hall is destructive, single electrical testing, and is subject to hits deficiency, laboratory sample preparation complexity.
Summary of the invention
The objective of the invention is the problem that exists for the ion implanted region trap characteristic parameter measuring method of existing photaesthesia chip array, a kind of extractive technique scheme of efficient, the harmless plane mercury cadmium telluride LONG WAVE INFRARED focus planardetector ion implanted region trap that combines based on tiny area photoelectric process and the scanning of high high precision is provided.
Concrete technical scheme of the present invention is as follows:
1. draw the test electrode of laser beam induced current from two ends, sample p district, sample is put into Dewar, regulate the residing temperature conditions of sample by liquid nitrogen and temperature controller;
2. regulate Dewar (5) position by two-dimensional micro-movement platform (6), under high power objective (4) and CCD camera (3) observation, Laser Focusing is located to the pn knot sample place in the Dewar, make sweep trace along the sample center line;
3. the laser of certain power is beaten on sample, regulated the sample temperature condition, in conjunction with techniques of phase-sensitive detecting technique (being lock-in amplifier and mechanical chopper), the electric current when laser scans along the sample center line under the record different temperatures and the relation curve of position;
4. linear (two pairs on symmetrical positive and negative four peak structures that are of the relation curve of the electric current that obtains of scanning and position, as shown in Figure 5), two symmetrical peaks wherein, representative is because the pn that induce ion implanted region and mercury calking diffusion region ties the laser beam induced current that forms, and peak-to-peak spacing has represented interface, direction of scanning width size; Two symmetrical peaks in the outside, representative are because the pn that induce mercury calking diffusion region and p uptake zone ties the laser beam induced current that forms, and peak-to-peak spacing has represented interface, direction of scanning width size;
5. structure physical model: the fundamental equation of Numerical Simulation of A Semiconductor Device is continuity equation, the electron transport equation in Poisson equation, electronics and hole, photoresponse can add equation by the charge carrier generation rate, other produce composite model and comprise that SRH is compound, Auger is compound and radiation recombination, with Finite Element Method discretize simultaneous iteration self-consistent solution;
6. the trap ionization concentration with ion implanted region in simulating is made as variable, add the incident light vertical irradiation to array structure long wave cadmium-telluride-mercury infrared detector on (the cadmium component is 0.224), change trap ionization concentration, obtain the temperature variant curve of trap ionization concentration by numerical simulation, the trap ionization concentration after saturated is the trap of ion implanted region.
The advantage of patent of the present invention is:
The present invention is based on the method that the scanning of tiny area photoelectric process and high precision combines, by the characteristic relation between the critical nature photoresponse of setting up trap that damage causes and device, realize the extraction of infrared focal plane detector photaesthesia chip array ion implanted region trap, have efficient, not damaged, the advantage such as reliable and accurate.The trap space distribution that the method obtains is determined jointly by diameter and the step-scan precision of the LASER SPECKLE of tiny area.Therefore, the spatial accuracy of ion implanted region trap characteristic parameter extraction is very high, and obtains space distribution based on direct photoelectric properties measurement, has extraordinary confidence level and intuitive.
Description of drawings
Fig. 1 is the vertical view of long wave HgCdTe infrared focal plane sample to be measured.
Fig. 2 is for detecting the experimental provision schematic diagram that adopts;
1. laser instruments among the figure, 2. chopper, 3.CCD camera, 4. high power objective, 5. Dewar, 6. two-dimensional micro-movement platform, 7. lock-in amplifier, 8. temperature controller, 9. stepping platform controller, 10. computing machine.
Fig. 3 is under the sample condition of different temperatures, the laser beam induced current figure of mercury-cadmium-tellurium focal plane detector array.
Fig. 4 is under the sample condition of different temperatures, and numerical simulation is extracted the effective trap of ion implanted region of acquisition with temperature relation figure.
Fig. 5 is laser beam induced current (LBIC) principle schematic of long wave cadmium-telluride-mercury infrared detector unit component.
Embodiment
By reference to the accompanying drawings the specific embodiment of the present invention is described in further detail below by embodiment.
This example is observed by high power objective 4 and the CCD camera 3 of micro--Raman spectrometer, with Laser Focusing in undersized pn interface, moved by sample in the Dewar 5 on the stepping platform controller 9 drive two-dimensional micro-movement platforms 6, so that laser beam is along the scanning of pn knot center line, temperature controller 8 is regulated sample temperature in the Dewar 5, p district test electrode by two far-ends is drawn current signal respectively, lock-in amplifier 7 is read faint current signal, self-compiling program is with the data of writing scan walking and electric current, at last data are processed, obtained respectively effective photosensitive elemental area size under the different temperatures.
Concrete steps are as follows:
1. testing sample is the Te-Cd-Hg photovoltaic device array, draws the electrode of two far-ends from sample edge p-type material upper surface, as shown in Figure 1.Sample is put into Dewar 5, Dewar is vacuumized, fill with liquid nitrogen.
2. Dewar 5 is placed on the two-dimensional micro-movement platform 6 that the walking precision is 0.1 μ m, by temperature controller 8 sample temperature is stabilized under the specified temp.Test electrode is wired to the 2to1 converter by BNC, and converter is wired on the phase-locked A interface by BNC, and chopper 2 is received phase-locked reference input mouth by the BNC wiring, and stepping platform controller 9 places manual, phase-locked receiving on computing machine 10 the corresponding interface.The device of experiment as shown in Figure 2.
3. open spectrometer and observe the computer program Labspec of usefulness, occur the enlarged image of measured device at main window.Regulate the focusing spiral under the two-dimensional micro-movement platform 6, transfer to clear picture.Manual adjustments stepping platform controller 9 and Dewar 5 make step-scan x axle along sample wire array AB direction shown in Figure 1.Move on to place, pn knot place, close white light, open lasing light emitter, open the laser attenuation sheet, see the Laser Focusing situation, be adjusted to luminous point for minimum.
4. chopper 2 is put into light path, it is 1723Hz that frequency is set, and can not be the multiple of ac frequency 50Hz, in order to avoid the low current signal that has the AC noise impact to measure.It is D1 that the laser attenuation sheet is set, and makes laser intensity reach 1 * 10
4W/cm
2, mobile stepping platform controller 9 changes laser and beats position on sample, and how many maximal values of observing phase-locked output current is, sets range according to this value, makes maximum current greater than half of range, and the current value that obtains like this is comparatively accurate.
5. make stepping platform controller 9 be in automatic transmission, the service data capture program.Select the direction of scanning along the scanning of x axle, the computer expert crosses the control mouth makes two-dimensional micro-movement platform 6 move along the x axle, and the platform movement precision can be reached for 0.1 μ m, can satisfy like this measurement requirement in undersized pn interface.
6. change sample temperature by temperature controller 8 and make it be stabilized in respectively 180K, 230,260,300K, laser is set undamped, make laser intensity remain on 1 * 10
4W/cm
2, judge and regulate two-dimensional micro-movement platform 6 that laser is beaten in position and the step 5 on sample is the same according to the reading of stepping platform controller 9, make stepping platform controller 9 be in automatic transmission, the service data capture program.Select the direction of scanning to scan along the x axle.
7. after measuring, the data that gather in the computer have four row, are respectively the position, the x of the current value of phase-locked output, r, θ.Adopt the mapping of first row to the four column datas, the figure that obtains is that laser power is 1 * 10
4W/cm
2, temperature be 180K ~ 260K laser beam induced current as shown in Figure 3.
8. the current spectrum curve from 180K ~ 260K shows, can find out that two pairs of laser beam induced current peak signals have appearred in each photosensitive unit place.Symmetrical peak wherein is because the n/n+ that induce ion implanted region and mercury calking diffusion region ties the laser beam induced current that forms, and peak-to-peak spacing has represented ion implanted junction sector width size; The symmetrical peak in the outside is because the n+/p that induce mercury calking diffusion region and p uptake zone ties the laser beam induced current that forms, and peak-to-peak spacing has represented mercury calking diffusion region width size.
9. based on above-mentioned pn structure, the fundamental equation of setting up Numerical Simulation of A Semiconductor Device is continuity equation, the electron transport equation in Poisson equation, electronics and hole.Photoresponse can add equation by the charge carrier generation rate, and other produce composite model and comprise that SRH is compound, Auger is compound and radiation recombination, with Finite Element Method discretize simultaneous iteration self-consistent solution.Thereby simulation obtains the laser beam induced current under the different temperatures, and then calibrates with Fig. 3 experimental result.After the calibration, the trap of ion implanted region is set to fitting parameter, thereby finally obtains the temperature variant curve of ionization trap, and the trap ionization concentration after saturated is the trap of ion implanted region, and size is 6.8 * 10
16Cm
-3
The trap of the ion implanted region that above-described embodiment obtains is close with differential Hall test result, and the extracting method that the trap of ion implanted region provided by the invention is described is reasonably, effectively.
Claims (1)
1. the extracting method of infrared focal plane detector ion implanted region trap data is characterized in that comprising the steps:
1) it is by under condition of different temperatures, the photo-generated carrier that utilizes the micro-meter scale laser facula to excite the infrared focal plane detector sample to produce, detect the laser beam induced current that the photosensitive first pn knot under the condition of different temperatures produces, linear two of the symmetry that is of the electric current that scanning obtains and the relation curve of position aligns negative peak; Middle two symmetrical peaks, representative is because the laser beam induced current that the n/n+ knot that induce ion implanted region and mercury calking diffusion region forms.Two symmetrical peaks in the outside, representative is because the laser beam induced current that the n+/p knot that induce mercury calking diffusion region and p uptake zone forms;
2) make up numerical simulation, the fundamental equation of Numerical Simulation of A Semiconductor Device is continuity equation, the electron transport equation in Poisson equation, electronics and hole, photoresponse can add equation by the charge carrier generation rate, surface recombination, comprise that SRH is compound, Auger is compound and radiation recombination adds equation, also will consider simultaneously thermal effect, the High-Field saturation effect of charge carrier, find the solution with Finite Element Method discretize simultaneous iteration, the tunneling effect of potential barrier is independent equation, with above-mentioned equation self-consistent solution; Trap ionization concentration with ion implanted region in the simulation is made as variable, add the incident light vertical irradiation to array structure long wave cadmium-telluride-mercury infrared detector, change trap ionization concentration, obtain the temperature variant curve of trap ionization concentration by numerical simulation, the trap ionization concentration after saturated is the trap of ion implanted region.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110118725A (en) * | 2018-02-07 | 2019-08-13 | 清华大学 | Photoelectric current scanning system |
| CN110243779A (en) * | 2019-05-17 | 2019-09-17 | 中国科学院上海技术物理研究所 | A kind of calculation method of HgCdTe infrared focal plane detector response spectrum |
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| CN101458293A (en) * | 2008-12-16 | 2009-06-17 | 中国科学院上海技术物理研究所 | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector |
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| CN101377533A (en) * | 2008-09-22 | 2009-03-04 | 中国科学院上海技术物理研究所 | Method for detecting mercury cadmium telluride photovoltaic detector deep energy level defect |
| CN101458293A (en) * | 2008-12-16 | 2009-06-17 | 中国科学院上海技术物理研究所 | Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110118725A (en) * | 2018-02-07 | 2019-08-13 | 清华大学 | Photoelectric current scanning system |
| CN110243779A (en) * | 2019-05-17 | 2019-09-17 | 中国科学院上海技术物理研究所 | A kind of calculation method of HgCdTe infrared focal plane detector response spectrum |
| CN110243779B (en) * | 2019-05-17 | 2021-08-06 | 中国科学院上海技术物理研究所 | Method for calculating response spectrum of mercury cadmium telluride infrared focal plane detector |
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Application publication date: 20130213 |