CN101458262A - Six-beam structure acceleration sensor and method for making same - Google Patents
Six-beam structure acceleration sensor and method for making same Download PDFInfo
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- CN101458262A CN101458262A CNA2008100648856A CN200810064885A CN101458262A CN 101458262 A CN101458262 A CN 101458262A CN A2008100648856 A CNA2008100648856 A CN A2008100648856A CN 200810064885 A CN200810064885 A CN 200810064885A CN 101458262 A CN101458262 A CN 101458262A
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Abstract
The invention provides a six-beam acceleration transducer and a preparation method thereof. The acceleration transducer comprises a mass block which is connected on a left-right bonding block by an elastic beam and provided with moving electrodes, and an upper fixed electrode and a lower fixed electrode which are connected with an up-down bonding block and positioned on the mass block; the elastic beam comprises a conduplicate beam and an anti-interference beam; the upper fixed electrode is independent from the lower fixed electrode, the moving electrodes are connected together by the mass block, a pair of differential capacitors are formed by the upper fixed electrode and the lower fixed electrode and the moving electrodes; the values of the two differential capacitors are inversely proportional to the change trend of an applied acceleration in operation; and the left-right bonding block and the up-down bonding block connected by the fixed electrodes are fixed on a glass substrate by electrostatic bonding. The acceleration transducer has the advantages of small size, great static capacitance, strong anti-interference capacity, no horizontal (non-sensitive) interference, high sensitivity, simple structure, flexible design, easy machining and the like.
Description
(1) technical field
What the present invention relates to is a kind of sensor construction, the novel six-beam structure acceleration sensor of big electric capacity differential capacitance type that specifically a kind of antijamming capability is strong.
(2) background technology
Micro-mechanical inertia instrument based on microelectromechanical systems (MEMS) is little with its volume, cost is low, simple in structure, can be used widely with advantages such as integrated circuit compatibilities and develop rapidly.
Along with the continuous development of acceleration transducer, people are more and more higher to the requirement of the sensitivity of micro-acceleration sensor and precision.The sensor that utilizes traditional rectangle mass to make, it detects the fair smaller of mass, and the detection capacitance profile that this structure forms is in the both sides of mass, generally can be very not big, the sensitivity that is unfavorable for increasing sensor.And, traditional twin beams or four girder constructions, less in the rigidity of non-sensitive direction beam, poor anti jamming capability.
The body silicon accelerometer of traditional structure, detection comb are asymmetric about usually, and when being subjected to non-sensitive direction inertial force, mass produces the motion of non-sensitive direction.For example: the left side is as capacitor plate 1, constitute capacitor C 1 with float electrode, the right side is as capacitor plate 2, constitute capacitor C 2 with float electrode, when working like this, if there is transverse acceleration to do the time spent, can make two electric capacity have differential type to change (side become greatly and opposite side diminish), just have electrical quantities like this in the test side and export.Even symmetrical structure because the deviation of technology also can produce certain mismatch, causes the electrical quantities output of test side.This invention has improved the antijamming capability of sensor greatly.
(3) summary of the invention
The purpose of this invention is to provide and a kind ofly can make under same process difficulty condition, obtain that the quality and the size of sensor is effectively controlled in the big static capacitance value, and can reduce the interference of non-sensitive direction greatly, increase the sensitivity and the precision of sensor, antijamming capability is strong, the big capacitive six-beam structure acceleration sensor of electric capacity difference.
The object of the present invention is achieved like this: it comprises passes through elastic beam, be connected on the bonding piece of the left and right sides the mass that has float electrode be connected with bonding piece up and down be positioned at mass fixed electorde up and down, elastic beam comprises two-fold beam and anti-interference beam, two fixed electordes are separate up and down, float electrode links together by mass, fixed electorde and float electrode constitute a pair of differential capacitance up and down, the size of two differential capacitances is just in time opposite with the trend that adds acceleration change during work, and left and right sides bonding piece and the piece of bonding up and down that is connected with fixed electorde are fixed on the glass substrate by electrostatic bonding.
The present invention also has some technical characterictics like this:
1, described mass is made up of H type mass and at least one coupled broach beam, and H type mass distribution is at broach beam both sides and center section, and it is relevant with the size of responsive quality and detection electric capacity that broach beam number changes;
2, described broach beam is symmetrically arranged with detection comb;
3, be connected anti-interference beam between described mass and the left and right sides bonding piece;
4, described bonding piece centrosymmetric structure is equally distributed on around the structure.
Another bright purpose of this law is to provide a kind of preparation method of six-beam structure acceleration sensor, adopts silicon materials to make, back side ICP inductive coupling plasma etching, and the back side and glass substrate bonding, positive with ICP etching releasing structure.Its manufacturing process comprises following three steps:
(1), carves the required table top of bonding and comprise 4 fixed blocks at the back side of silicon ICP dry etching;
(2) the bonding table top that step 1 is etched with electrostatic bonding is bonded in and forms 4 fixed blocks on the glass substrate;
(3) etch beam, mass, the fixed and movable electrode pattern of sensor with ICP in the front of silicon, discharge beam, mass and electrode structure.
The present invention is to provide the strong novel six-beam structure acceleration sensor of big electric capacity differential capacitance type of a kind of antijamming capability.It comprises by elastic beam (two-fold beam and anti-interference beam) and is connected the mass that has float electrode on the bonding piece of the left and right sides, and what be connected with bonding piece up and down is positioned at mass fixed electorde up and down.Two fixed electordes are separate up and down, float electrode links together by mass, fixed electorde and float electrode constitute a pair of differential capacitance up and down, and the size of two differential capacitances is just in time opposite with the trend that adds acceleration change during work, thereby realize the differential type output of electric capacity.Left and right sides bonding piece and the piece of bonding up and down that is connected with fixed electorde are fixed on the glass substrate by electrostatic bonding.The invention has the advantages that size sensor is little, direct capacitance is big, antijamming capability is strong, laterally (non-sensitive direction) interference of nothing, and highly sensitive, simple in structure, flexible design is easy to processing etc.
Characteristics of the present invention have:
1, it comprises by elastic beam (two-fold stoplog and anti-interference beam) and is connected the mass that has electrode on the bonding piece of the left and right sides, the fixed electorde that is connected with bonding piece up and down;
2, responsive mass is made up of H type mass and many coupled broach beams, and broach beam number changes the size that can change responsive quality and detect electric capacity;
3, be connected anti-interference beam between mass and the left and right sides bonding piece, increased the rigidity of structure, reduced the interference of non-sensitive direction effectively in non-sensitive direction;
4, centrosymmetric structure, the bonding piece is distributed in around the structure, has increased bonding area effectively;
5, make of silicon materials, back side ICP (inductive coupling plasma) etching, the back side and glass substrate bonding, positive with ICP etching releasing structure.
The invention has the advantages that: 1, direct capacitance is big, and is highly sensitive; 2, antijamming capability is strong, and sensitive direction disturbs nothing but; 3, flexible design structural parameters; 4, simple in structure, be easy to processing.
(4) description of drawings
Fig. 1 is a structural representation of the present invention.
(5) embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments:
In conjunction with Fig. 1, the present invention includes by elastic beam 2, be connected left button and close piece 10, right button close on the piece 3 the mass that has float electrode 5 and with last bonding piece 1, following bonding piece 7 connects is positioned at the upside fixed electorde 11 of mass about in the of 5, downside fixed electorde 9, elastic beam 2 comprises two-fold beam and anti-interference beam 4, on, following two fixed electordes are separate, float electrode 6 links together by mass 5, fixed electorde and float electrode constitute a pair of differential capacitance up and down, the size of two differential capacitances is just in time opposite with the trend that adds acceleration change during work, and left and right sides bonding piece and the piece of bonding up and down that is connected with fixed electorde are fixed on the glass substrate by electrostatic bonding.Mass is made up of H type mass and at least one coupled broach beam 8, and H type mass distribution is at broach beam 8 both sides and center section, and it is relevant with the size of responsive quality and detection electric capacity that broach beam number changes; The broach beam is symmetrically arranged with detection comb; Be connected anti-interference beam 4 between mass and the left and right sides bonding piece; Bonding piece centrosymmetric structure is equally distributed on around the structure.
Manufacturing process of the present invention roughly has following three steps:
1,, carves the required table top of bonding (4 fixed blocks) at the back side of silicon ICP dry etching;
2, the bonding table top that step 1 is etched with electrostatic bonding is bonded in and forms 4 fixed blocks on the glass substrate;
3, etch beam, mass, the fixed and movable electrode pattern of sensor in the front of silicon with ICP, discharge beam, mass and electrode structure.
Embodiment 1: when the acceleration that makes progress acts on this acceleration transducer, under the inertial force effect, the float electrode 6 that links to each other with mass will the relative fixed electorde 11 that links to each other with the bonding piece, fixed electorde 9 has a downward displacement, at this moment, the capacitor C 1 that forms between float electrode 6 and the upside fixed electorde 11 will diminish, and and the capacitor C 2 that forms between the downside fixed electorde 9 will become big, by external circuit the variable quantity of capacitor C 1, capacitor C 2 is carried out Differential Detection, just can record the size of this acceleration.
Embodiment 2: when the acceleration as left acts on this acceleration transducer, under the inertial force effect, the float electrode 6 relative fixed electordes 11 that link to each other with the bonding piece, the fixed electorde 9 that links to each other with mass will have to the right a displacement, at this moment, the capacitor C 3 that forms between float electrode 6 and the upside fixed electorde 11 is with constant, and and the capacitor C 4 that forms between the downside fixed electorde 9 also with constant, like this float electrode 6 and up and down between fixed electorde 11, the fixed electorde 9 total capacitance of formation also will remain unchanged.Like this, transverse acceleration can not make the output of sensor change, and that is to say, does not have cross sensitivity and disturb when work.
Embodiment 3: because the deviation of technology makes structure produce mismatch, left and right sides broach is asymmetric, when transverse acceleration acts on this acceleration transducer, as described in embodiment 2, can produce cross sensitivity and disturb.But because the effect of anti-interference beam 4, the displacement of mass 5 and coupled float electrode 6 is limited greatly, can not produce cross sensitivity and disturb.
Claims (6)
1, a kind of six-beam structure acceleration sensor, it is characterized in that: it comprises passes through elastic beam, be connected on the bonding piece of the left and right sides the mass that has float electrode be connected with bonding piece up and down be positioned at mass fixed electorde up and down, elastic beam comprises two-fold beam and anti-interference beam, two fixed electordes are separate up and down, float electrode links together by mass, fixed electorde and float electrode constitute a pair of differential capacitance up and down, the size of two differential capacitances is just in time opposite with the trend that adds acceleration change during work, and left and right sides bonding piece and the piece of bonding up and down that is connected with fixed electorde are fixed on the glass substrate by electrostatic bonding.
2, six-beam structure acceleration sensor according to claim 1, it is characterized in that: described mass is made up of H type mass and at least one coupled broach beam, H type mass distribution is at broach beam both sides and center section, and it is relevant with the size of responsive quality and detection electric capacity that broach beam number changes.
3, six-beam structure acceleration sensor according to claim 2 is characterized in that: described broach beam is symmetrically arranged with detection comb.
4, six-beam structure acceleration sensor according to claim 4 is characterized in that: be connected anti-interference beam between described mass and the left and right sides bonding piece.
5, six-beam structure acceleration sensor according to claim 1 is characterized in that: described bonding piece centrosymmetric structure is equally distributed on around the structure.
6, a kind of preparation method of six-beam structure acceleration sensor is characterized in that: adopt silicon materials to make, and back side ICP inductive coupling plasma etching, the back side and glass substrate bonding, positive with ICP etching releasing structure.Its manufacturing process comprises following three steps:
(1), carves the required table top of bonding and comprise 4 fixed blocks at the back side of silicon ICP dry etching;
(2) the bonding table top that step 1 is etched with electrostatic bonding is bonded in and forms 4 fixed blocks on the glass substrate;
(3) etch beam, mass, the fixed and movable electrode pattern of sensor with ICP in the front of silicon, discharge beam, mass and electrode structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008100648856A CN101458262B (en) | 2008-07-08 | 2008-07-08 | Six-beam structure acceleration sensor and method for making same |
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| CN2008100648856A CN101458262B (en) | 2008-07-08 | 2008-07-08 | Six-beam structure acceleration sensor and method for making same |
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| CN101458262B CN101458262B (en) | 2010-12-01 |
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Cited By (15)
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| CN101858931A (en) * | 2010-05-28 | 2010-10-13 | 南京理工大学 | Frame type capacitive silicon micromechanical accelerometer |
| CN101941671A (en) * | 2009-07-06 | 2011-01-12 | 张刚 | Electrostatic type vibration energy collector construction member and manufacturing method thereof |
| CN103323622A (en) * | 2013-06-21 | 2013-09-25 | 浙江大学 | Method for measuring three-dimensional acceleration through static supporting type optical detecting method |
| WO2014063409A1 (en) * | 2012-10-26 | 2014-05-01 | 中国科学院上海微系统与信息技术研究所 | Capacitive accelerometer of h-shaped beam and manufacturing method |
| CN104597287A (en) * | 2015-01-30 | 2015-05-06 | 歌尔声学股份有限公司 | Inertia measurement module and triaxial accelerometer |
| TWI500934B (en) * | 2013-09-11 | 2015-09-21 | Pixart Imaging Inc | Micro-electro-mechanical device having differential capacitors of corresponding sizes |
| WO2016101611A1 (en) * | 2014-12-25 | 2016-06-30 | 歌尔声学股份有限公司 | Inertia measurement module and three-axis accelerometer |
| CN105785072A (en) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | MEMS accelerometers and manufacturing method thereof |
| US9529012B2 (en) | 2013-03-01 | 2016-12-27 | Industrial Technology Research Institute | Micro-electro mechanical apparatus with interdigitated spring |
| CN107782916A (en) * | 2016-08-27 | 2018-03-09 | 深迪半导体(上海)有限公司 | A kind of triaxial accelerometer |
| CN109490576A (en) * | 2018-12-19 | 2019-03-19 | 成都力创云科技有限公司 | Based on a kind of fully differential capacitor MEMS acceleration by SOI |
| CN109507452A (en) * | 2018-12-19 | 2019-03-22 | 成都力创云科技有限公司 | A kind of high-performance bulk silicon MEMS capacitive accelerometer |
| CN110308308A (en) * | 2019-06-27 | 2019-10-08 | 深迪半导体(上海)有限公司 | Flatly moving type accelerometer in a kind of face with compensating electrode |
| CN110596423A (en) * | 2019-08-29 | 2019-12-20 | 南京理工大学 | Comb tooth capacitance type uniaxial accelerometer with high overload resistance |
| CN113280967A (en) * | 2021-05-08 | 2021-08-20 | 杭州电子科技大学 | Three-dimensional decoupling force touch sensor and MEMS (micro-electromechanical systems) preparation method |
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| KR100363246B1 (en) * | 1995-10-27 | 2003-02-14 | 삼성전자 주식회사 | Oscillating structure and method for controlling natural frequency thereof |
| CN2424450Y (en) * | 2000-06-02 | 2001-03-21 | 中国科学院上海冶金研究所 | Micromechanical comb capacity type acceleration transducer |
| CN100371717C (en) * | 2004-09-30 | 2008-02-27 | 中北大学 | Micro-mechanical digital beat frequency accelerometer |
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2008
- 2008-07-08 CN CN2008100648856A patent/CN101458262B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101941671A (en) * | 2009-07-06 | 2011-01-12 | 张刚 | Electrostatic type vibration energy collector construction member and manufacturing method thereof |
| CN101858931A (en) * | 2010-05-28 | 2010-10-13 | 南京理工大学 | Frame type capacitive silicon micromechanical accelerometer |
| WO2014063409A1 (en) * | 2012-10-26 | 2014-05-01 | 中国科学院上海微系统与信息技术研究所 | Capacitive accelerometer of h-shaped beam and manufacturing method |
| US9529012B2 (en) | 2013-03-01 | 2016-12-27 | Industrial Technology Research Institute | Micro-electro mechanical apparatus with interdigitated spring |
| CN103323622A (en) * | 2013-06-21 | 2013-09-25 | 浙江大学 | Method for measuring three-dimensional acceleration through static supporting type optical detecting method |
| CN103323622B (en) * | 2013-06-21 | 2015-02-25 | 浙江大学 | Method for measuring three-dimensional acceleration through static supporting type optical detecting method |
| TWI500934B (en) * | 2013-09-11 | 2015-09-21 | Pixart Imaging Inc | Micro-electro-mechanical device having differential capacitors of corresponding sizes |
| US10473686B2 (en) | 2014-12-25 | 2019-11-12 | Goertek Inc. | Inertia measurement module and triaxial accelerometer |
| WO2016101611A1 (en) * | 2014-12-25 | 2016-06-30 | 歌尔声学股份有限公司 | Inertia measurement module and three-axis accelerometer |
| CN105785072A (en) * | 2014-12-25 | 2016-07-20 | 中芯国际集成电路制造(上海)有限公司 | MEMS accelerometers and manufacturing method thereof |
| CN104597287A (en) * | 2015-01-30 | 2015-05-06 | 歌尔声学股份有限公司 | Inertia measurement module and triaxial accelerometer |
| CN104597287B (en) * | 2015-01-30 | 2017-09-05 | 歌尔股份有限公司 | Inertia measuring module and three axis accelerometer |
| CN107782916A (en) * | 2016-08-27 | 2018-03-09 | 深迪半导体(上海)有限公司 | A kind of triaxial accelerometer |
| CN107782916B (en) * | 2016-08-27 | 2021-07-09 | 深迪半导体(绍兴)有限公司 | Three-axis accelerometer |
| CN109490576A (en) * | 2018-12-19 | 2019-03-19 | 成都力创云科技有限公司 | Based on a kind of fully differential capacitor MEMS acceleration by SOI |
| CN109507452A (en) * | 2018-12-19 | 2019-03-22 | 成都力创云科技有限公司 | A kind of high-performance bulk silicon MEMS capacitive accelerometer |
| CN110308308A (en) * | 2019-06-27 | 2019-10-08 | 深迪半导体(上海)有限公司 | Flatly moving type accelerometer in a kind of face with compensating electrode |
| CN110308308B (en) * | 2019-06-27 | 2021-07-13 | 深迪半导体(绍兴)有限公司 | In-plane translational accelerometer with compensation electrode |
| CN110596423A (en) * | 2019-08-29 | 2019-12-20 | 南京理工大学 | Comb tooth capacitance type uniaxial accelerometer with high overload resistance |
| CN110596423B (en) * | 2019-08-29 | 2021-10-08 | 南京理工大学 | Comb tooth capacitance type uniaxial accelerometer with high overload resistance |
| CN113280967A (en) * | 2021-05-08 | 2021-08-20 | 杭州电子科技大学 | Three-dimensional decoupling force touch sensor and MEMS (micro-electromechanical systems) preparation method |
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