CN101451886A - Semiconductor laser power real time on-line detection device - Google Patents
Semiconductor laser power real time on-line detection device Download PDFInfo
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- CN101451886A CN101451886A CNA2008102468434A CN200810246843A CN101451886A CN 101451886 A CN101451886 A CN 101451886A CN A2008102468434 A CNA2008102468434 A CN A2008102468434A CN 200810246843 A CN200810246843 A CN 200810246843A CN 101451886 A CN101451886 A CN 101451886A
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Abstract
The invention is a laser power realtime online detection device of semiconductor laser belonging to the laser photoelectric detection field. The device comprises a spectroscope, a laser output power detection section and a workpiece reflection light power detection section. A spectroscope is disposed in a light path of the semiconductor array laser, dividing two portions of beams from laser beam output by the laser and the workpiece reflection beam, homogenizing and attenuating light individually for the two beams aiming at spatial distribution unevenness of beam intensity of the semiconductor laser, then amplifying and filtering to a voltage signal in linear relation with the workpiece reflection light power. Light power output by the laser and that reflected by the workpiece can be calculated according to the voltage signal. The invention realizes online detections of the laser output power of the high power semiconductor array laser and workpiece reflection power at the same time. The device can be integrated to the output path of the high power semiconductor array laser.
Description
Technical field
The present invention relates to a kind of semiconductor laser power real time on-line detection device, this device can detect the luminous power that surface of the work in laser output power in the semiconductor array laser and the laser processing procedure reflects back into the semiconductor laser surface in real time, belongs to the laser photoelectricity detection range.
Background technology
Laser output power is one of key parameter of laser instrument, and in field of laser processing, the laser power of laser instrument directly affects parameters such as the range of work, processing technology and crudy, and therefore, the detection of laser power is the indispensable ingredient of laser instrument.
At present, the detection of high power semiconductor array laser laser output power mainly is to adopt laser powermeter to carry out off-line measurement, this is feasible for the scientific research laser instrument, but, for the industrial processes laser instrument, off-line measurement need interrupt process, and can not reflect the situation of change of laser power in the process in real time, and existing high power laser light power meter structure more complicated, volume are bigger, are difficult to realize integrated with the less semiconductor laser of volume.In addition, the high power semiconductor array laser has the luminescence unit size in characteristics such as micron dimension, beam divergence angle are big, the beam intensity space distribution is inhomogeneous, so the laser power on-line measuring device of existing high power gas laser and solid state laser can't be applied on the high power semiconductor array laser.
In the Laser Processing, when laser radiation to those during to the higher material of the lower material of laser absorption rate or surface smoothness, part laser can reflect back into the surface of semiconductor laser, and laser instrument is caused damage, can damage laser instrument when serious.Therefore, the luminous power that workpiece in the laser processing procedure is reflected back into the semiconductor laser surface is carried out the detection of real-time online, the semiconductor laser damage that causes because workpiece is reflective in the time of can avoiding Laser Processing.At present, also less than pick-up unit at workpiece reflection power in the Laser Processing.
Summary of the invention
The invention provides a kind of laser power on-line measuring device, this device can be integrated in the output light path of semiconductor array laser, can realize simultaneously that the real-time online of laser output power and workpiece reflection power detects.
Basic ideas of the present invention are: place a slice spectroscope in the light path of semiconductor array laser, from the laser beam S of laser instrument output and workpiece reflection light beam R, tell the light beam S1 and the light beam R1 of fraction, at semiconductor laser beam intensity characteristics spatially pockety, respectively light beam S1 and light beam R1 are carried out light intensity homogenize and attenuation processing, obtain light intensity light beam S2 and light beam R2 uniformly, adopt two photoelectric conversion modules respectively the optical power signals of light beam S2 and light beam R2 to be converted to linear with it current signal Is and Ir, convert current signal Is and Ir to voltage signal through operational amplification circuit again and amplify, obtain voltage signal Us and Ur in the 0-5V scope then after filtration after the wave circuit filtering, the value by real-time measurement voltage signal Us and Ur just can calculate the power P s that exports laser S and the power P r of workpiece reflection R.
The technical solution used in the present invention is as follows: this pick-up unit comprises spectroscope, laser output power test section and workpiece reflection power detection part.Described laser output power test section comprises beam homogenization attenuation factor, first photoelectric conversion module and the first signal amplification filtering module.Described workpiece reflection power detection part comprises beam homogenization focusing system, second photoelectric conversion module and secondary signal amplification filtering module.
Take place when the output laser of laser instrument passes through spectroscope to shine the little current signal of generation on first photoelectric conversion module behind the beam reflected S1 process beam homogenization attenuation factor, little current signal carries out obtaining the voltage signal linear with laser output power after the amplification filtering through the first signal amplification filtering module.
Shine after the beam reflected R1 process beam homogenization focusing system during workpiece reflection light beam process spectroscope and produce little current signal on second photoelectric conversion module, little current signal carries out obtaining and the linear voltage signal of workpiece reflection power after the amplification filtering through secondary signal amplification filtering module.
Described spectroscope becomes 30 degree～60 degree angles to place with the optical axis of laser instrument output light path.
Described beam homogenization attenuation factor comprises first frosted glass plate and the attenuator of placing successively along the direction of propagation of light, and first frosted glass plate becomes 30 degree～60 degree angles to place with the optical axis of light beam S1.
Described beam homogenization focusing system comprises second frosted glass plate and the convex lens of placing successively along the direction of propagation of light, and second frosted glass plate becomes 30 degree～60 degree angles to place with the optical axis of light beam R1.
Described photoelectric conversion module is a photodiode.
The present invention has the following advantages:
1) realized high power semiconductor array laser laser output power and add online detection workpiece reflection power time the in man-hour;
2) pick-up unit is simple in structure, and volume is little, can be integrated in the light path of high power semiconductor array laser;
3) by decay, can realize detection from tens watts to a few myriawatt semiconductor laser luminous powers to light beam S1 and light beam R1 different proportion, applied widely.
Description of drawings
Fig. 1 laser power on-line measuring device structure composition diagram
The structural representation of Fig. 2 beam homogenization attenuation factor embodiment 1
The structural representation of Fig. 3 beam homogenization focusing system embodiment 1
The structural representation of Fig. 4 beam homogenization attenuation factor embodiment 2
The structural representation of Fig. 5 beam homogenization focusing system embodiment 2
Among the figure: A, the laser power on-line measuring device, B, the laser output power test section, C, the workpiece reflection power detection part, S, the output laser beam, R, the workpiece reflection light beam, S1, beam reflected during output laser beam S process spectroscope, R1, beam reflected during workpiece reflection light beam R process spectroscope, 1, spectroscope, 2, the beam homogenization attenuation factor, S2, light beam behind the light beam S1 process beam homogenization attenuation factor 2,3, first photoelectric conversion module, 4, the first signal amplification filtering module, 5, the beam homogenization focusing system, R2, light beam after the light beam R1 process beam homogenization focusing system 5,6, second photoelectric conversion module, 7, secondary signal amplification filtering module, 21, first frosted glass plate, 22, attenuator, 51, second frosted glass plate, 52, convex lens, 23, the 3rd frosted glass plate, 24, second attenuator, 53, the 4th frosted glass plate, 54, second convex lens.
Embodiment
The invention will be further described below in conjunction with accompanying drawing 1～Fig. 3:
The structure of this example comprises three parts as shown in Figure 1 generally: spectroscope 1, laser output power test section B and workpiece reflection power detection part C.Laser output power test section B mainly is made up of beam homogenization attenuation factor 2, first photoelectric conversion module 3 and the first signal amplification filtering module 4.Workpiece reflection power detection part B mainly is made up of beam homogenization focusing system 5, second photoelectric conversion module 6 and secondary signal amplification filtering module 7.Wherein: the output terminal of first photoelectric conversion module 3 links to each other with the input end of the first signal amplification filtering module 4, and the output terminal of second photoelectric conversion module 6 links to each other with the input end of secondary signal amplification filtering module 7.What first photoelectric conversion module 3 in this example and second photoelectric conversion module 6 were all selected for use is photodiode.
Miter angle is placed the spectroscope 1 that a slice is coated with anti-reflection film in the output light path of semiconductor array laser, the output laser S of laser instrument has segment beam that 90 degree reflections can take place during through spectroscope 1 to obtain light beam S1, light beam S1 process becomes first frosted glass plate 21 of miter angle placement with its optical axis after, diffuse reflection takes place, its light intensity space distribution obtains homogenize, obtain light beam S2 through behind the attenuator 22 again, light beam S2 shines opto-electronic conversion takes place on the photodiode, produce the linear little current signal Is of luminous power with light beam S2, current signal Is converts voltage signal to through the discharge circuit in the first signal amplification filtering module and amplifies, obtain the interior voltage signal Us of 0～5V scope after the wave circuit filtering after filtration again, according to Us=K
1Is, Is=M
1Ps
2, Ps
2=N
1Ps
1, Ps
1=N
0Ps can get Us=K
1M
1N
1N
0Ps, i.e. Ps=Us/ (K
1M
1N
1N
0), K wherein
1Be the enlargement factor of discharge circuit, M
1Be the photoelectric conversion factors of photodiode, N
1Be the attenuation coefficient of beam homogenization attenuation factor 2, N
0Be the reflection coefficient of spectroscope 1, Ps
2Be the luminous power of light beam S2, Ps
1Be the luminous power of light beam S1, Ps is the luminous power of output laser S.The value of voltage signal Us can be measured by existing method and obtain, again by Ps=Us/ (K
1M
1N
1N
0) just can calculate the power P s that exports laser S, realized that the real-time online of laser output power detects.
Also there is segment beam that 90 degree reflections can take place during workpiece reflection R process spectroscope 1 and obtains light beam R1, when light beam R1 process becomes second frosted glass plate 51 of miter angle placement with its optical axis, diffuse reflection takes place, its light intensity space distribution obtains homogenize, obtain light beam R2 after focusing on through convex lens 52 again, light beam R2 shines opto-electronic conversion takes place on the photodiode, produce the linear little current signal Ir of luminous power with light beam R2, current signal Ir converts voltage signal to through the discharge circuit in the secondary signal amplification filtering module again and amplifies, obtain the interior voltage signal Ur of 0～5V scope after the wave circuit filtering after filtration again, according to Ur=K
2Ir, Ir=M
2Pr
2, Pr
2=N
2Pr
1, Pr
1=N
0Pr can get Ur=K
2M
2N
2N
0Pr, i.e. Pr=Ur/ (K
2M
2N
2N
0), K wherein
2Be the enlargement factor of discharge circuit, M
2Be the photoelectric conversion factors of photodiode, N
2Be the attenuation coefficient of beam homogenization attenuation factor 5, Pr
2Be the luminous power of light beam R2, Pr
1Be the luminous power of light beam R1, Pr is the luminous power of workpiece reflection R, and the numerical value of voltage signal Ur can be measured by existing method and obtain, again according to Pr=Ur/ (K
2M
2N
2N
0) just can calculate the power P r of workpiece reflection R, realized that the real-time online of workpiece reflection power detects.
Beam homogenization attenuation factor 2 in the present embodiment also can adopt other version, such as: with first frosted glass plate 21 among Fig. 2 and attenuator 22 transpositions, perhaps attenuator 22 is removed; Also can adopt version as shown in Figure 4, perhaps, perhaps second attenuator 24 be removed the 3rd frosted glass plate 23 among Fig. 4 and second attenuator, 24 transpositions.
Beam homogenization focusing system 5 in the present embodiment also can adopt other version, such as: the convex lens among Fig. 3 52 are removed; Also can adopt version as shown in Figure 5, perhaps second convex lens 54 among Fig. 5 be removed.
The above is one embodiment of the present of invention, certain content of the present invention is not limited to the content of described embodiment, this professional those of ordinary skill can carry out some conversion to it, and is consistent as long as its method and the present invention are narrated, all should be considered as the included scope of the present invention.
Claims (5)
1, a kind of semiconductor laser power real time on-line detection device is characterized in that: comprise the spectroscope (1), laser output power test section (B) and the workpiece reflection power detection part (C) that are placed in the laser instrument output light path; Described laser output power test section (B) comprises beam homogenization attenuation factor (2), first photoelectric conversion module (3) and the first signal amplification filtering module (4); Described workpiece reflection power detection part (C) comprises beam homogenization focusing system (5), second photoelectric conversion module (6) and secondary signal amplification filtering module (7);
Beam reflected S1 takes place during through spectroscope (1) and shines first photoelectric conversion module (3) after through beam homogenization attenuation factor (2) and go up and produce little current signal in the output laser of laser instrument, and little current signal carries out obtaining the voltage signal linear with laser output power after the amplification filtering through the first signal amplification filtering module (4);
Shine second photoelectric conversion module (6) during workpiece reflection light beam process spectroscope (1) after the beam reflected R1 process beam homogenization focusing system (5) and go up the little current signal of generation, little current signal carries out obtaining and the linear voltage signal of workpiece reflection power after the amplification filtering through secondary signal amplification filtering module (7).
2, a kind of semiconductor laser power real time on-line detection device according to claim 1 is characterized in that: described spectroscope (1) becomes 30 degree～60 degree angles to place with the optical axis of laser instrument output light path.
3, a kind of semiconductor laser power real time on-line detection device according to claim 1, it is characterized in that: described beam homogenization attenuation factor (2) comprises first frosted glass plate (21) and the attenuator of placing successively along the direction of propagation of light (22), and first frosted glass plate (21) becomes 30 degree～60 degree angles to place with the optical axis of light beam S1.
4, a kind of semiconductor laser power real time on-line detection device according to claim 1, it is characterized in that: described beam homogenization focusing system (5) comprises second frosted glass plate (51) and the convex lens of placing successively along the direction of propagation of light (52), and second frosted glass plate (51) becomes 30 degree～60 degree angles to place with the optical axis of light beam R1.
5, a kind of semiconductor laser power real time on-line detection device according to claim 1 is characterized in that: described photoelectric conversion module is a photodiode.
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| CNA2008102468434A CN101451886A (en) | 2008-12-31 | 2008-12-31 | Semiconductor laser power real time on-line detection device |
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|---|---|---|---|
| CNA2008102468434A CN101451886A (en) | 2008-12-31 | 2008-12-31 | Semiconductor laser power real time on-line detection device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104655408A (en) * | 2015-01-29 | 2015-05-27 | 大族激光科技产业集团股份有限公司 | Laser power monitoring device |
| CN104897373A (en) * | 2015-06-10 | 2015-09-09 | 昂纳信息技术（深圳）有限公司 | Method and device for acquiring linear relationship between laser power and detector photocurrent |
| CN105334024A (en) * | 2015-09-18 | 2016-02-17 | 西安炬光科技股份有限公司 | Semiconductor laser array single-laser-bar real-time testing system and method |
| CN107941709A (en) * | 2017-12-06 | 2018-04-20 | 维沃移动通信有限公司 | A kind of article packaging material recognition methods, apparatus and system |
| CN108057953A (en) * | 2017-12-13 | 2018-05-22 | 广东正业科技股份有限公司 | A kind of laser-processing system and laser power control method |
| CN109202278A (en) * | 2017-06-29 | 2019-01-15 | 武汉华工激光工程有限责任公司 | Laser welding head energy back device |
| CN109746570A (en) * | 2019-02-26 | 2019-05-14 | 苏州创鑫激光科技有限公司 | A kind of optical power attenuation regulating system, method and laser welding system |
-
2008
- 2008-12-31 CN CNA2008102468434A patent/CN101451886A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104655408A (en) * | 2015-01-29 | 2015-05-27 | 大族激光科技产业集团股份有限公司 | Laser power monitoring device |
| CN104897373A (en) * | 2015-06-10 | 2015-09-09 | 昂纳信息技术（深圳）有限公司 | Method and device for acquiring linear relationship between laser power and detector photocurrent |
| CN104897373B (en) * | 2015-06-10 | 2018-10-23 | 昂纳信息技术（深圳）有限公司 | Obtain the method and device of laser power and detector photoelectric current linear relationship |
| CN105334024A (en) * | 2015-09-18 | 2016-02-17 | 西安炬光科技股份有限公司 | Semiconductor laser array single-laser-bar real-time testing system and method |
| CN105334024B (en) * | 2015-09-18 | 2017-08-25 | 西安炬光科技股份有限公司 | Semiconductor laser array list bar real-time testing system and method for testing |
| CN109202278A (en) * | 2017-06-29 | 2019-01-15 | 武汉华工激光工程有限责任公司 | Laser welding head energy back device |
| CN107941709A (en) * | 2017-12-06 | 2018-04-20 | 维沃移动通信有限公司 | A kind of article packaging material recognition methods, apparatus and system |
| CN108057953A (en) * | 2017-12-13 | 2018-05-22 | 广东正业科技股份有限公司 | A kind of laser-processing system and laser power control method |
| CN109746570A (en) * | 2019-02-26 | 2019-05-14 | 苏州创鑫激光科技有限公司 | A kind of optical power attenuation regulating system, method and laser welding system |
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Open date: 20090610 |