CN101447472A - Etch stop layer, double-mosaic structure and forming method thereof - Google Patents
Etch stop layer, double-mosaic structure and forming method thereof Download PDFInfo
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- CN101447472A CN101447472A CNA2007101716644A CN200710171664A CN101447472A CN 101447472 A CN101447472 A CN 101447472A CN A2007101716644 A CNA2007101716644 A CN A2007101716644A CN 200710171664 A CN200710171664 A CN 200710171664A CN 101447472 A CN101447472 A CN 101447472A
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Abstract
The invention discloses an etch stop layer which comprises a pre-stop layer and a main stop layer. The nitrogen content of the pre-stop layer is higher than the nitrogen content of the main stop layer. The corresponding forming method of the etch stop layer comprises the following steps: a substrate is arranged in a deposit chamber; carrier gas and first reactive gas are pumped into the deposit chamber; energy is introduced into the deposit chamber for the deposit of the pre-stop layer; second reactive gas is pumped into the deposit chamber for the deposit of the main stop layer, and the nitrogen content of the second reactive layer is smaller than the nitrogen content of the first reactive gas; the pumping of the second reactive gas is stopped; the substrate is taken out from the deposit chamber. A double-mosaic structure using the etch stop layer and a forming method thereof are also disclosed. The etch stop layer, the double-mosaic structure and the forming method thereof can ensure the better VBD characteristics of a device on one hand and can effectively improve the poisoning problem of photoresist caused by the high nitrogen content in the etch stop layer during the subsequent etching process on the other hand.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of etching stop layer, dual-damascene structure and forming method thereof.
Background technology
In the semiconductor fabrication, need utilize plain conductor to connect to be made in each device on the wafer, and form external connection line and finish whole technology and make.Development along with semiconductor integrated circuit, and to the demand of high speed device, after entering 0.18 micron technology, for further reducing the interconnect delay of metallic resistance and chip, by the dual-damascene structure that the dielectric layer of copper and low K value (low dielectric constant) is realized, become the main flow scheme that forms metal connecting line in high integration, the High-speed IC's Chip manufacturing.
The formation method of dual-damascene structure can have multiple, and Fig. 1 to 5 is the device profile schematic diagram of the traditional dual-damascene structure formation method of explanation, simply introduces a kind of formation method of dual-damascene structure commonly used below in conjunction with Fig. 1 to Fig. 5.
Fig. 1 is the device profile map behind formation first dielectric layer in the existing dual-damascene structure, as shown in Figure 1, at first deposits one deck etching stop layer 102 on substrate 101, and in the following technology of 90nm, this etching stop layer 102 is used the carborundum of nitrating usually.Then, stop deposition first dielectric layer 103 on the layer 102 at this, this layer requirement is the layer of dielectric material of low k value, can be the silica material that utilizes chemical gaseous phase depositing process to form usually, as black diamond (BD, black Diamond).
Fig. 2 is the device profile map behind the formation through hole in the existing dual-damascene structure, as shown in Figure 2, after forming first dielectric layer 103, form through hole 104 on this first dielectric layer 103, the etching technics of this step to through hole 104 can stop in the slower etching stop layer of etch rate 102.
Fig. 3 is the device profile map behind formation second dielectric layer in the existing dual-damascene structure, as shown in Figure 3, forms second dielectric layer 106 on first dielectric layer 103 and in the through hole 104.This second dielectric layer need utilize spin coating proceeding to form usually, to reach flatness preferably, as adopting the DUO material layer.
Fig. 4 is the device profile map after the pattern trenches in the existing dual-damascene structure, as shown in Figure 4, utilizes 107 pairs of processing of carrying out pattern trenches on second dielectric layer 106 of photoresist.In the prior art, the normal discovery has the incomplete phenomenon of development after the photoetching of this step: the residue 110 that has stayed some photoresists at the edge of photoresist 107.Examine under a microscope, there are crooked and empty limit phenomenon in the edge that shows as litho pattern, can be referred to as photoresist usually and be poisoned phenomenon.
Fig. 5 is the device profile map behind the formation groove in the existing dual-damascene structure, as shown in Figure 5, after the pattern trenches, is the etching that mask carries out groove 108 with this photoresist figure.Because the existence of pattern edge place photoresist residue, this groove 108 equally also can the not clean corner thing 120 of etching occur at edge, causes etching not exclusively to cause the distortion of groove figure.
Then, can utilize etching stop layer 102 erosion removals of the method for wet etching or dry etching, again through hole and groove be carried out metalized, form dual-damascene structure through hole 104 bottoms.
Wherein, in case deformation has appearred in groove 108, the actual size of its formation will the off-design value, causes the filling quality of metallic copper to descend, and influences the life-span and the reliability of device.In addition, in the CMP technology of carrying out subsequently,, be prone to the phenomenon of copper cash fracture especially for the less groove of size.Examine under a microscope, show as the substrate surface metal connecting line and attenuate, even interrupt, cause the circuit can't operate as normal.
The phenomenon that photoresist poisoned occurs and analyze above-mentioned, think that the reason of its generation comprises following 2 points:
Etching stop layer in A, this dual-damascene structure contains a large amount of nitrogen, and it can form the alkaline matter that contains ammonia in etching process;
It is acid that B, photoresist are after exposure, and it can react with it when running into the alkali compounds of Ammonia etc., the phenomenon that is poisoned occurs;
Utilize the material of second dielectric layer that spin coating proceeding fills comparatively loose behind C, the etching through hole, it can not stop the alkaline matter that contains ammonia that produces in the etching stop layer to move up.
When moving on this part alkaline matter with after photoresist contacts, itself and photoresist react, and the phenomenon that the photoresist shown in Fig. 4 is poisoned just occurred.
But, in the actual production, can not be merely solve the problems referred to above by the nitrogen content that reduces in the etching stop layer: because reduce the content of nitrogen in this layer can cause device performance descend (as, nitrogen content is high more, the voltage breakdown performance of device is good more).
For solving the problem that above-mentioned photoresist is poisoned; February in 2004, the Chinese patent application of disclosed publication number CN1476074 on the 18th disclosed a kind of method that forms dual-damascene structure; this method is by increasing cap rock silica on one deck above the interlayer dielectric layer; and only rest on during etching on this on cap rock in the first time; prevent that by the method that litho pattern is transferred in the cap rock photoresist from contacting with the interlayer dielectric layer that contains ammoniac compounds, the protection photoresist is not poisoned.But the Ammonia alkaline matter that this method produces in etching stop layer during for above-mentioned etching through hole makes problem that photoresist poisoned and inapplicable.
Summary of the invention
The invention provides a kind of etching stop layer, dual-damascene structure and forming method thereof, to improve the problem that the photoresist that causes because of nitrogen content is too high in the existing etching process is poisoned.
A kind of etching stop layer provided by the invention comprise stopping layer in advance and lead stopping layer, and the described nitrogen content that stops layer in advance is higher than the nitrogen content that described master stops layer.
Alternatively, describedly stop layer in advance and described master stops layer for silicon carbide layer.
Alternatively, the described thickness that stops layer in advance stops the thickness of layer less than described master.
Preferably, the described thickness of layer that stops in advance is 30 to 100
Between, described master stops the thickness of layer 400 to 500
Between.
Formation method with etching stop layer of identical or relevant art feature provided by the invention comprises step:
Substrate is positioned in the settling chamber;
In described settling chamber, feed the gas carrier and first reacting gas;
Introduce energy to described settling chamber, stop the deposition of layer in advance;
In described settling chamber, feed second reacting gas, lead the deposition that stops layer, and the nitrogenous gas amount in described second reacting gas is less than the nitrogenous gas amount in first reacting gas;
Stop to feed described second reacting gas;
With described substrate by taking out in the described settling chamber.
Alternatively, described first reacting gas comprises trimethyl silane and ammonia, and the flow-rate ratio between described first reacting gas is between 1:7 to 1:4.
Alternatively, described second reacting gas comprises trimethyl silane and ammonia, and the flow-rate ratio between described second reacting gas is between 1:2 to 1:1.
Alternatively, described second reacting gas comprises methyl-monosilane class gas and oxygen.
Alternatively, the flow of described gas carrier is between 1000 to 1500sccm.
Alternatively, described energy is the radio-frequency power supply of power between 800 to 1200W.
Alternatively, in described settling chamber, feed second reacting gas, comprise step:
Stop to feed described first reacting gas, feed second reacting gas.
Alternatively, used each gas of described first reacting gas and second reacting gas is identical, the flow-rate ratio difference between each gas.At this moment, in described settling chamber, feed second reacting gas, can comprise step:
Each gas flow of described first reacting gas that adjusting feeds in described settling chamber feeds each gas according to second flow rate of reactive gas ratio.
A kind of dual-damascene structure with identical or relevant art feature provided by the invention, comprise substrate with conductive structure, be positioned at the etching stop layer on the described substrate, be positioned at first dielectric layer on the described etching stop layer, be positioned at second dielectric layer on described first dielectric layer, the through hole that links to each other with described conductive structure that in described first dielectric layer and second dielectric layer, forms, and the groove that links to each other with at least one described through hole; Wherein, described etching stop layer also comprises and stops layer in advance and main stop layer, and the described nitrogen content that stops layer in advance is higher than the nitrogen content that described master stops layer.
Alternatively, describedly stop layer in advance and described master stops layer for silicon carbide layer.
Alternatively, the described thickness that stops layer in advance stops the thickness of layer less than described master.
Preferably, described stop in advance the layer thickness 30 to
Between, described master stop the layer thickness 400 to
Between.
Alternatively, described first dielectric layer comprises the black diamond layer, and described second dielectric layer comprises the DUO material layer that utilizes spin coating proceeding to form.
Formation method with a kind of dual-damascene structure of identical or relevant art feature provided by the invention comprises step:
Substrate is provided, has conductive structure on the described substrate;
Utilize first reacting gas to deposit, on described conductive structure, form and stop layer in advance;
Utilize second reacting gas to deposit, stop in advance forming on the layer to lead stopping layer described, and the nitrogenous gas amount in described second reacting gas is less than the nitrogenous gas amount in first reacting gas;
Stop to form on the layer first dielectric layer described master;
In described first dielectric layer, form through hole;
Form second dielectric layer on described first dielectric layer and in the described through hole;
Pattern trenches figure on described second dielectric layer;
The groove that formation links to each other with at least one described through hole.
Alternatively, describedly stop layer in advance and described master stops layer for silicon carbide layer.
Alternatively, the described thickness that stops layer in advance stops the thickness of layer less than described master.Preferably, described stop in advance the layer thickness 30 to
Between, described master stop the layer thickness 40 to
Between.
Alternatively, described first reacting gas comprises trimethyl silane and ammonia, and the flow-rate ratio of described trimethyl silane and ammonia is between 1:7 to 1:4.
Alternatively, described second reacting gas comprises trimethyl silane and ammonia, and the flow-rate ratio of described trimethyl silane and ammonia is between 1:2 to 1:1.
Alternatively, described first dielectric layer is the black diamond layer, and described second dielectric layer is the material layer that utilizes spin coating method to form.
Preferably, described material layer is the DUO material layer.
Compared with prior art, the present invention has the following advantages:
Etching stop layer of the present invention, dual-damascene structure and forming method thereof have formed and have comprised and stop layer and the main etching stop layer that stops layer in advance that wherein, the nitrogen content that stops layer in advance is higher than the main nitrogen content that stops layer.Adopt etching stop layer of the present invention or dual-damascene structure, can guarantee that device still has voltage breakdown (VBD) performance preferably, also can effectively improve the problem that the higher photoresist that causes of the nitrogen content because of in the etching stop layer that occurs is poisoned on the other hand in subsequent technique on the one hand.
Of the present inventionly stop layer in advance and the main layer that stops can to form successively in same depositing device, simple to operate, it is convenient to realize, to not significantly influence of production efficiency.
Description of drawings
Fig. 1 is the device profile map behind formation first dielectric layer in the existing dual-damascene structure;
Fig. 2 is the device profile map behind the formation through hole in the existing dual-damascene structure;
Fig. 3 is the device profile map behind formation second dielectric layer in the existing dual-damascene structure;
Fig. 4 is the device profile map after the pattern trenches in the existing dual-damascene structure;
Fig. 5 is the device profile map behind the formation groove in the existing dual-damascene structure;
Fig. 6 is the flow chart of the etching stop layer formation method of first embodiment of the invention;
Form the device profile map stop in advance behind the layer in the etching stop layer of Fig. 7 for the explanation first embodiment of the invention;
Fig. 8 is for forming the device profile map after the master stops layer in the etching stop layer of explanation first embodiment of the invention;
Fig. 9 is the flow chart of the dual-damascene structure formation method in the second embodiment of the invention;
Form the device profile map stop in advance behind the layer in the dual-damascene structure of Figure 10 for the explanation second embodiment of the invention;
Figure 11 illustrates and forms the main device profile map that stops behind the layer in the dual-damascene structure of second embodiment of the invention;
Figure 12 illustrates the device profile map that forms in the dual-damascene structure of second embodiment of the invention behind first dielectric layer;
Figure 13 illustrates the device profile map that forms in the dual-damascene structure of second embodiment of the invention behind the through hole;
Figure 14 illustrates the device profile map that forms in the dual-damascene structure of second embodiment of the invention behind second dielectric layer;
Figure 15 illustrates the device profile map after the pattern trenches in the dual-damascene structure of second embodiment of the invention;
Figure 16 illustrates the device profile map that forms in the dual-damascene structure of second embodiment of the invention behind the groove.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Structure of the present invention and processing method can be widely used in the every field; and can utilize many suitable material; be to be illustrated below by specific embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
Secondly, the present invention utilizes schematic diagram to describe in detail, and when the embodiment of the invention was described in detail in detail, for convenience of explanation, the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, should be with this as limitation of the invention.In addition, in the making of reality, should comprise the three dimensions size of length, width and the degree of depth.
Along with the making of integrated circuit develops to very lagre scale integrated circuit (VLSIC) (ULSI), inner current densities is increasing, device feature size constantly dwindles, making to each step process requires more and more higher, therefore, when making small size device, often need carry out certain adjustment at the material that on the make adopts, method etc.
With the example that is grown to of etching stop layer, in the manufacturing process of traditional large-size device, what this etching stop layer adopted usually is silicon nitride layer, silicon oxynitride layer.But, need use the lower compound of dielectric constant usually instead, as silicon carbide layer, as etching stop layer when technology enters into 90nm when following.
Because silicon carbide layer exists breakdown potential to force down the shortcoming of (VBD poor-performing), also need mix certain nitrogen in this layer usually.Yet, the nitrogen that adds in this etching stop layer may form the alkaline matter that contains ammonia in etching, cause the photoresist in the subsequent technique to be poisoned, by the figure generation deformation of photoresist definition, the result makes the parameters such as electrical property, reliability and life-span of device be affected.For this reason, the invention provides a kind of etching stop layer, dual-damascene structure and forming method thereof.
First embodiment:
The first embodiment of the present invention has proposed a kind of new etching stop layer.Fig. 6 is the flow chart of the etching stop layer formation method of first embodiment of the invention, and Fig. 7 and Fig. 8 describe in detail to first embodiment of the invention below in conjunction with Fig. 6 to Fig. 8 for the device profile map of the etching stop layer in the explanation first embodiment of the invention.
In the present embodiment, used etching stop layer comprises and stops layer in advance and main stop layer, and the described nitrogen content that stops layer in advance is higher than the nitrogen content that described master stops layer.
In the present embodiment, stopping layer in advance and be silicon carbide layer with the main layer that stops, is to utilize the method for plasma enhanced chemical vapor deposition (PECVD, Plasma Enhance Chemical VaporDeposition) to form, and its concrete formation step is:
Step S601: substrate is positioned in the settling chamber.Settling chamber in the present embodiment refers to the settling chamber of plasma enhanced chemical vapor deposition equipment.
Step S602: in the settling chamber, feed the gas carrier and first reacting gas.
In the present embodiment, used gas carrier can be in the inert gases such as helium, nitrogen or argon gas any, and its flow can be arranged between 1000 to 1500sccm, as is 1200sccm.
In the present embodiment, being used to form the reacting gas that contains fire sand is ammonia and methyl-monosilane class gas, and wherein, methyl-monosilane class gas can be methyl-monosilane (Si (CH
3) H
3), dimethylsilane (Si (CH
3)
2H
2), trimethyl silane (Si (CH
3)
3H), tetramethylsilane (Si (CH
3)
4) in waiting any.
In the present embodiment, what utilize that first reacting gas forms is to stop layer in advance in the etching stop layer, requires the nitrogen content in it higher---this point can utilize the flow that strengthens gas nitrogenous in the reacting gas to realize.
As, when adopting trimethyl silane and ammonia to be reacting gas, the flow-rate ratio between the two can be arranged between the 1:7 to 1:4.Particularly, can be between 100 to 150sccm with the flow set of trimethyl silane, as be 120sccm; Between 600 to 800sccm, as is 700sccm with the flow set of ammonia.
Step S603: after feeding above-mentioned gas carrier and reacting gas, in the settling chamber, introduce energy, stop the deposition of layer in advance.
Be to utilize radio-frequency power supply to introduce energy in the present embodiment, its watt level can be between 800 to 1200W, as are 1000W.
In addition,, also the pressure in the settling chamber is controlled between 2 to 5Torr in this step, as is 3Torr in order to reach deposition effect preferably.
Step S604: stop to feed first reacting gas, finish the deposition that stops layer in advance.
Form the device profile map stop in advance behind the layer in the etching stop layer of Fig. 7 for the explanation first embodiment of the invention.As shown in Figure 7, on substrate 701, formed and stopped layer 702 in advance.In the present embodiment, this stop in advance layer 702 thickness 30 to
Between, as be
Higher because of the nitrogen content that this layer has, it can guarantee that device has voltage breakdown (VBD) characteristic preferably.
Step S605: in the settling chamber, feed second reacting gas, lead the deposition that stops layer.
What utilize in this step that second reacting gas forms is that master in the etching stop layer stops layer, requires the nitrogen content in it lower---this point can utilize the flow that reduces gas nitrogenous in the reacting gas to realize.
As, when adopting trimethyl silane and ammonia to be reacting gas, the flow-rate ratio between the two can be arranged between the 1:2 to 1:1.Particularly, can be between 250 to 450sccm with the flow set of trimethyl silane, as be 350sccm; Between 300 to 500sccm, as is 400sccm with the flow set of ammonia.
The watt level of radio-frequency power supply still can maintain between 800 to 1200W in this step deposition, and the pressure in the settling chamber also still can maintain between 2 to 5Torr.
Step S606: stop to feed second reacting gas, finish the main deposition that stops layer.
Form the main device profile map that stops behind the layer in the etching stop layer of Fig. 8 for the explanation first embodiment of the invention, as shown in Figure 8, substrate 701 stop in advance having formed the main layer 703 that stops on the layer 702 again.In the present embodiment, the master in the etching stop layer stops layer 703 and is used to guarantee that etching stopping stops in layers 703 in this master, and its thickness requirement is thicker, usually can 400 to
Between, as be
Because it is lower that this master stops the nitrogen content of layer 703, even can being etched, it removes a part in etching process, and it also can not form the alkaline matter of a large amount of Ammonias in etching process, and this phenomenon that follow-up photoresist is poisoned has tangible mitigation.
Step S607: substrate by taking out in the described settling chamber, is finished the deposition of etching stop layer.
In the present embodiment, the gas that is adopted in first reacting gas and second reacting gas is identical, only is that the flow between each reacting gas is adjusted.Wherein, when adjusting flow rate of reactive gas, adopted the feeding that stops first reacting gas earlier, feed the mode of reacting gas again by the flow of the second reacting gas requirement, in other embodiments of the invention, also can adopt each flow rate of reactive gas of direct adjustment, stop layer and the main mode that stops the nitrogen content between the layer in advance to change.
In the present embodiment, in the main deposition process that stops layer, adopted and stopped the identical reacting gas of layer in advance, only by changing flow how much the adjusting recently between reacting gas the nitrogen content of two interlayers.In other embodiments of the invention, can also make the reacting gas when deposition is main to be stopped layer and stop in advance layer different, it can be realized equally to stopping the adjustment that layer and master stop the nitrogen content of interlayer in advance.As can the ammonia in the reacting gas being transformed to oxygen (flow of oxygen can be lower usually, as between 20 to 100sccm) when stopping layer in that deposition is main, the main layer that stops of order becomes oxygen containing carborundum, and then its nitrogen content is reduced to 0.
Second embodiment:
The second embodiment of the present invention is a kind of dual-damascene structure of this etching stop layer of application.Fig. 9 is the flow chart of the dual-damascene structure formation method in the second embodiment of the invention, Figure 10 to Figure 16 describes in detail to specific embodiments of the invention below in conjunction with Fig. 9 to Figure 16 for the device profile map of the forming process of the dual-damascene structure in the explanation second embodiment of the invention.
Dual-damascene structure in the present embodiment, comprise substrate with conductive structure, be positioned at the etching stop layer on the described substrate, be positioned at first dielectric layer on the described etching stop layer, be positioned at second dielectric layer on described first dielectric layer, the through hole that links to each other with described conductive structure that in described first dielectric layer and second dielectric layer, forms, and the groove that links to each other with at least one described through hole; Wherein: described etching stop layer also comprises and stops layer in advance and main stop layer, and the described nitrogen content that stops layer in advance is higher than the nitrogen content that described master stops layer.
In the present embodiment, stop layer in advance and main what stop that layer selects for use is silicon carbide layer, and the thickness that stops layer in advance is less than the main thickness that stops layer.As, can with stop in advance the layer thickness be arranged on 30 to
Between, with the main thickness that stops layer being arranged on 400 to
Between.
For dual-damascene structure, common first dielectric layer and second dielectric layer can adopt the material of low K value to form, as, first dielectric layer has been selected the silicon oxide layer (as the BD material layer) of low K value for use in the present embodiment, and second dielectric layer has been selected the DUO material layer that utilizes spin coating proceeding to form for use.
The specific implementation step of the above-mentioned dual-damascene structure in the present embodiment is as follows:
Step S901: substrate is provided, and has conductive structure on the described substrate.
This substrate can be for forming the substrate of metal oxide semiconductor transistor, also can be for forming the substrate of underlying metal connecting line construction.
Step S902: utilize first reacting gas to deposit, on described substrate, form and stop layer in advance.
Form the device profile map stop in advance behind the layer in the dual-damascene structure of Figure 10 for the explanation second embodiment of the invention, as shown in figure 10, (conductive structure wherein is not shown) formed and stopped layer 1002 in advance on substrate 1001.
In the present embodiment, this stops layer in advance is the higher silicon carbide layer of nitrogen content that utilizes PECVD deposition to form, its thickness be arranged on 30 to
Between, as be
Forming in the present embodiment and stopping 1002 o'clock first used reacting gas of layer in advance is ammonia and methyl-monosilane class gas, and wherein, methyl-monosilane class gas can be methyl-monosilane (Si (CH
3) H
3), dimethylsilane (Si (CH
3)
2H
2), trimethyl silane (Si (CH
3)
3H), tetramethylsilane (Si (CH
3)
4) in waiting any.
For improving the VBD performance of device, need make having higher nitrogen content in this layer.For this reason, when adopting trimethyl silane and ammonia to be reacting gas, can improve nitrogenous gas in two kinds of reacting gass---the flow of ammonia, as the flow-rate ratio of the two can being arranged between the 1:7 to 1:4.
Particularly, can be between 100 to 150sccm with the flow set of trimethyl silane, as be 120sccm; Between 600 to 800sccm, as is 700sccm with the flow set of ammonia.
In addition, can also feed the gas carrier of flow between 1000 to 1500sccm simultaneously, as in helium, nitrogen or the argon gas any.
The watt level of radio-frequency power supply can be arranged between 800 to 1200W in this step deposition, and the pressure in the settling chamber can be arranged between 2 to 5Torr.
Step S903: utilize second reacting gas to deposit, stop in advance forming on the layer to lead stopping layer described, and the nitrogenous gas amount in described second reacting gas is less than the nitrogenous gas amount in first reacting gas.
Form the main device profile map that stops behind the layer in the dual-damascene structure of Figure 11 for the explanation second embodiment of the invention, as shown in figure 11, substrate 1001 stop in advance having formed the main layer 1003 that stops on the layer 1002 again.
In the present embodiment, it is after deposition stops layer in advance that this master is stopped layer 1003, the lower silicon carbide layer of nitrogen content that utilizes same PECVD equipment deposition to form.Its thickness be arranged on 400 to
Between, as be
Form main stop that 1003 o'clock second used reacting gas of layer still can be in ammonia and the methyl-monosilane class gas a kind of in the present embodiment, as methyl-monosilane (Si (CH
3) H
3), dimethylsilane (Si (CH
3)
2H
2), trimethyl silane (Si (CH
3)
3H), tetramethylsilane (Si (CH
3)
4) a kind of in waiting.
Be the problem that the photoresist that improves in the subsequent step is poisoned, the nitrogen content that the master who requires in this step to form stops in the layer 1003 is lower.When in second reacting gas, adopting trimethyl silane and ammonia to be reacting gas, can be with the flow-rate ratio between two kinds of reacting gass between the 1:2 to 1:1.
Particularly, can be between 250 to 450sccm with the flow set of trimethyl silane, as be 350sccm; Between 300 to 500sccm, as is 400sccm with the flow set of ammonia.
In addition, can also feed the gas carrier of flow between 1000 to 1500sccm simultaneously, as in helium, nitrogen or the argon gas any.
The watt level of radio-frequency power supply still can be arranged between 800 to 1200W in this step deposition, and the pressure in the settling chamber is arranged between 2 to 5Torr.
Step S904: stop to form on the layer first dielectric layer the master.
Form the device profile map behind first dielectric layer in the dual-damascene structure of Figure 12 for the explanation second embodiment of the invention, as shown in figure 12, formed first dielectric layer 1004 again on the layer 1003 main stopping.
This first dielectric layer 1004 can be to utilize a kind of in silica that chemical gaseous phase depositing process forms or the silicon oxynitride, as being a kind of in fluorine silex glass, phosphorosilicate glass, Pyrex, boron-phosphorosilicate glass or the black diamond.Select for use in the present embodiment for black diamond, its thickness 4000 to
Between, as be
Step S905: in first dielectric layer, form through hole.
Form the device profile map behind the through hole in the dual-damascene structure of Figure 13 for the explanation second embodiment of the invention, as shown in figure 13, etching has formed through hole 1005 in first dielectric layer 1004.Because the main etch rate that stops 1004 of layer 1003 and first dielectric layers differs bigger, and the main thickness that stops layer 1003 is thicker, and this step etching can stop at the master usually and stop in layers 1003.
The concrete formation method of this through hole is as follows:
A, elder generation utilize the graphical via hole image of photoetching technique on first dielectric layer 1004;
B, first dielectric layer 1004 (etching stopping stops in the layer 1003 in main) that utilizes the dry etching technology etching not protected again by photoresist;
C, remove the first dielectric layer surface residual photoresist.
Step S906: form second dielectric layer on first dielectric layer and in the through hole.
Form the device profile map behind second dielectric layer in the dual-damascene structure of Figure 14 for the explanation second embodiment of the invention, as shown in figure 14, formation second dielectric layer 1006 through hole 1005 in and on first dielectric layer 1004.
This second dielectric layer 1006 need utilize spin coating proceeding to form usually, with filling vias 1005 preferably, reaches flatness preferably simultaneously, and what adopt in the present embodiment is the method for spin coating DUO material layer.
Step S907: pattern trenches figure on second dielectric layer.
Figure 15 illustrates the device profile map after the pattern trenches in the dual-damascene structure of second embodiment of the invention, and as shown in figure 15, this step normally utilizes photoresist 1007 to define the figure of groove on second dielectric layer 1006.
Because staying in the few master of nitrogen content during etching through hole 1005 in the present embodiment stops in the layer 1003, in etching process, can not produce a large amount of Ammonia materials, therefore, also pass the problem that the second loose dielectric layer 1006 poisons photoresist 1007, can form pattern edge photoresist figure preferably with regard to having alleviated the Ammonia material that produces in the etching in the conventional art.
Step S908: form the groove that links to each other with at least one through hole.
Figure 16 illustrates the device profile map that forms in the dual-damascene structure of second embodiment of the invention behind the groove, as shown in figure 16, owing to utilize in the present embodiment pattern edge of photoresist 1007 definition better, be that the structure of groove 1008 of mask formation is also comparatively complete with it.
The concrete formation method of this groove is as follows:
A, second dielectric layer 1006 and part first dielectric layer 1004 that utilize the dry etching technology etching not protected by photoresist;
C, remove second dielectric layer, 1006 surfaces residual photoresist, form the groove 1008 that links to each other with at least one through hole 1005.
Can see that in the present embodiment dual-damascene structure, second dielectric layer 1006 that adopts spin coating proceeding to form is comparatively loose.If produced a large amount of Ammonia materials in the etching in front, it can pass this second dielectric layer 1006 and arrive its surfaces, to the litho pattern of back exert an influence (so-called photoresist promptly takes place poisoned phenomenon).
But owing in the present embodiment traditional etching stop layer is improved, with its change to by nitrogen content higher stop layer in advance, and the lower master of nitrogen content stops layer and forms.To stop layer thickness bigger because of main, and and it is poor to have bigger etch rate between first dielectric layer, when first dielectric layer being carried out etching with the formation through hole, this step etching can stop at the lower master of nitrogen content and stop in the layer, and can not produce a large amount of Ammonia materials influences follow-up photoetching process.
In addition and since main stop layer also having formed down nitrogen content higher stop layer in advance, can also guarantee simultaneously that device has VBD characteristic preferably.
Interlayer dielectric layer in the present embodiment is made up of first dielectric layer and second dielectric layer, in other embodiments of the invention, it can also form this interlayer dielectric layer by a kind of dielectric layer or the dielectric layer more than three kinds, its concrete implementation step is all similar with present embodiment to thinking, under the enlightenment of the embodiment of the invention, the extension of this application is easy to understand and realization for those of ordinary skills, does not repeat them here.
In other embodiments of the invention, can also make the reacting gas when deposition is main to be stopped layer and stop in advance layer different, it can be realized equally to stopping the adjustment that layer and master stop the nitrogen content of interlayer in advance.As can the ammonia in the reacting gas being transformed to oxygen (flow of oxygen can be lower usually, as between 20 to 100sccm) when stopping layer in that deposition is main, the main layer that stops of order becomes oxygen containing carborundum, and then its nitrogen content is reduced to 0.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (36)
1, a kind of etching stop layer is characterized in that: comprise stopping layer in advance and lead stopping layer, and the described nitrogen content that stops layer in advance is higher than the nitrogen content that described master stops layer.
2, etching stop layer as claimed in claim 1 is characterized in that: describedly stop layer in advance and described master stops layer for silicon carbide layer.
3, etching stop layer as claimed in claim 1 is characterized in that: the described thickness that stops layer in advance stops the thickness of layer less than described master.
4, as claim 1 or 3 described etching stop layers, it is characterized in that: described stop in advance the layer thickness 30 to
Between.
5, as claim 1 or 3 described etching stop layers, it is characterized in that: described master stop the layer thickness 400 to
Between.
6, a kind of formation method of etching stop layer is characterized in that, comprises step:
Substrate is positioned in the settling chamber;
In described settling chamber, feed the gas carrier and first reacting gas;
Introduce energy to described settling chamber, stop the deposition of layer in advance;
In described settling chamber, feed second reacting gas, lead the deposition that stops layer, and the nitrogenous gas amount in described second reacting gas is less than the nitrogenous gas amount in first reacting gas;
Stop to feed described second reacting gas;
With described substrate by taking out in the described settling chamber.
7, formation method as claimed in claim 6 is characterized in that: described first reacting gas comprises trimethyl silane and ammonia.
8, formation method as claimed in claim 7, it is characterized in that: the flow-rate ratio of described trimethyl silane and ammonia is between 1:7 to 1:4.
9, formation method as claimed in claim 6 is characterized in that: described second reacting gas comprises trimethyl silane and ammonia.
10, formation method as claimed in claim 9, it is characterized in that: the flow-rate ratio of described trimethyl silane and ammonia is between 1:2 to 1:1.
11, formation method as claimed in claim 6 is characterized in that: described second reacting gas comprises methyl-monosilane class gas and oxygen.
12, formation method as claimed in claim 6, it is characterized in that: the flow of described gas carrier is between 1000 to 1500sccm.
13, formation method as claimed in claim 6 is characterized in that: described energy is the radio-frequency power supply of power between 800 to 1200W.
14, formation method as claimed in claim 6 is characterized in that, feeds second reacting gas in described settling chamber, comprises step:
Stop to feed described first reacting gas, feed second reacting gas.
15, formation method as claimed in claim 6 is characterized in that: used each gas of described first reacting gas and second reacting gas is identical, the flow-rate ratio difference between each gas.
16, formation method as claimed in claim 15 is characterized in that, feeds second reacting gas in described settling chamber, comprises step:
Each gas flow of described first reacting gas that adjusting feeds in described settling chamber feeds each gas according to second flow rate of reactive gas ratio.
17, a kind of dual-damascene structure, comprise substrate with conductive structure, be positioned at the etching stop layer on the described substrate, be positioned at first dielectric layer on the described etching stop layer, be positioned at second dielectric layer on described first dielectric layer, the through hole that links to each other with described conductive structure that in described first dielectric layer and second dielectric layer, forms, and the groove that links to each other with at least one described through hole; It is characterized in that: described etching stop layer also comprises and stops layer in advance and main stop layer, and the described nitrogen content that stops layer in advance is higher than the nitrogen content that described master stops layer.
18, dual-damascene structure as claimed in claim 17 is characterized in that: describedly stop layer in advance and described master stops layer for silicon carbide layer.
19, dual-damascene structure as claimed in claim 17 is characterized in that: the described thickness that stops layer in advance stops the thickness of layer less than described master.
20, as claim 17 or 19 described dual-damascene structures, it is characterized in that: described stop in advance the layer thickness 30 to
Between.
21, as claim 17 or 19 described dual-damascene structures, it is characterized in that: described master stop the layer thickness 400 to
Between.
22, dual-damascene structure as claimed in claim 17 is characterized in that: described first dielectric layer comprises the black diamond layer.
23, dual-damascene structure as claimed in claim 17 is characterized in that: described second dielectric layer comprises the DUO material layer that utilizes spin coating proceeding to form.
24, a kind of formation method of dual-damascene structure is characterized in that, comprises step:
Substrate is provided, has conductive structure on the described substrate;
Utilize first reacting gas to deposit, on described substrate, form and stop layer in advance;
Utilize second reacting gas to deposit, stop in advance forming on the layer to lead stopping layer described, and the nitrogenous gas amount in described second reacting gas is less than the nitrogenous gas amount in first reacting gas;
Stop to form on the layer first dielectric layer described master;
In described first dielectric layer, form through hole;
Form second dielectric layer on described first dielectric layer and in the described through hole;
Pattern trenches figure on described second dielectric layer;
The groove that formation links to each other with at least one described through hole.
25, formation method as claimed in claim 24 is characterized in that: describedly stop layer in advance and described master stops layer for silicon carbide layer.
26, formation method as claimed in claim 24 is characterized in that: the described thickness that stops layer in advance stops the thickness of layer less than described master.
27, as claim 24 or 26 described formation methods, it is characterized in that: described stop in advance the layer thickness 30 to
Between.
28, as claim 24 or 26 described formation methods, it is characterized in that: described master stop the layer thickness 40 to
Between.
29, formation method as claimed in claim 24 is characterized in that: described first reacting gas comprises trimethyl silane and ammonia.
30, formation method as claimed in claim 29, it is characterized in that: the flow-rate ratio of described trimethyl silane and ammonia is between 1:7 to 1:4.
31, formation method as claimed in claim 24 is characterized in that: described second reacting gas comprises trimethyl silane and ammonia.
32, formation method as claimed in claim 31, it is characterized in that: the flow-rate ratio of described trimethyl silane and ammonia is between 1:2 to 1:1.
33, formation method as claimed in claim 24 is characterized in that: described second reacting gas comprises methyl-monosilane class gas and oxygen.
34, formation method as claimed in claim 24 is characterized in that: described first dielectric layer is the black diamond layer.
35, formation method as claimed in claim 24 is characterized in that: described second dielectric layer is the material layer that utilizes spin coating method to form.
36, formation method as claimed in claim 35 is characterized in that: described material layer is the DUO material layer.
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| CN2007101716644A CN101447472B (en) | 2007-11-27 | 2007-11-27 | Etch stop layer, double-mosaic structure and forming method thereof |
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| CN2007101716644A CN101447472B (en) | 2007-11-27 | 2007-11-27 | Etch stop layer, double-mosaic structure and forming method thereof |
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| CN101447472B CN101447472B (en) | 2012-03-07 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412189A (en) * | 2011-05-13 | 2012-04-11 | 上海华力微电子有限公司 | Manufacturing method of through-hole dielectric barrier layer capable of reducing photoresist poisoning |
| CN102446820A (en) * | 2011-08-17 | 2012-05-09 | 上海华力微电子有限公司 | Novel etching barrier layer structure capable of avoiding light resistance poisoning and preparation method thereof |
| CN103117201A (en) * | 2011-11-17 | 2013-05-22 | 中芯国际集成电路制造(上海)有限公司 | Plasma enhanced chemical vapor deposition (PECVD) device and forming method of semiconductor component |
| CN105529321A (en) * | 2014-10-17 | 2016-04-27 | 台湾积体电路制造股份有限公司 | Etch stop layer in integrated circuits |
| CN112038286A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for improving hillock defect in copper interconnection process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6465340B1 (en) * | 2001-02-06 | 2002-10-15 | Advanced Micro Devices, Inc. | Via filled dual damascene structure with middle stop layer and method for making the same |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412189A (en) * | 2011-05-13 | 2012-04-11 | 上海华力微电子有限公司 | Manufacturing method of through-hole dielectric barrier layer capable of reducing photoresist poisoning |
| CN102446820A (en) * | 2011-08-17 | 2012-05-09 | 上海华力微电子有限公司 | Novel etching barrier layer structure capable of avoiding light resistance poisoning and preparation method thereof |
| CN103117201A (en) * | 2011-11-17 | 2013-05-22 | 中芯国际集成电路制造(上海)有限公司 | Plasma enhanced chemical vapor deposition (PECVD) device and forming method of semiconductor component |
| CN103117201B (en) * | 2011-11-17 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | The forming method of PECVD device and semiconductor device |
| CN105529321A (en) * | 2014-10-17 | 2016-04-27 | 台湾积体电路制造股份有限公司 | Etch stop layer in integrated circuits |
| US10090242B2 (en) | 2014-10-17 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch stop layer in integrated circuits |
| CN105529321B (en) * | 2014-10-17 | 2020-04-10 | 台湾积体电路制造股份有限公司 | Etch stop layer in integrated circuits |
| US10720386B2 (en) | 2014-10-17 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch stop layer in integrated circuits |
| US11404368B2 (en) | 2014-10-17 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company Ltd | Etch stop layer in integrated circuits |
| US11942419B2 (en) | 2014-10-17 | 2024-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Etch stop layer in integrated circuits |
| CN112038286A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for improving hillock defect in copper interconnection process |
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| CN101447472B (en) | 2012-03-07 |
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