CN101446759A - Method for producing secondary coining moulding board for nanometer coining and secondary coining moulding board thereof - Google Patents
Method for producing secondary coining moulding board for nanometer coining and secondary coining moulding board thereof Download PDFInfo
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- CN101446759A CN101446759A CNA2008101544303A CN200810154430A CN101446759A CN 101446759 A CN101446759 A CN 101446759A CN A2008101544303 A CNA2008101544303 A CN A2008101544303A CN 200810154430 A CN200810154430 A CN 200810154430A CN 101446759 A CN101446759 A CN 101446759A
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Abstract
The invention relates to a method for producing a secondary coining moulding board for nanometer coining and a secondary coining moulding board thereof. The method is as follows: a primary coining moulding board carved with distributed feedback grating patterns is applied. 100-1000 distributed feedback grating structures are produced on a primary moulding board by the electron beam direct-writing technology; the primary coining moulding board with a phase-shift structure between the distributed feedback grating patterns is used for printing continuously on another substrate by the step-and-repeat coining method. Therefore, the substrate is made into a plurality of secondary coining moulding boards with the diameter of 2-4 inches and the same distributed feedback grating patterns as the patterns on the primary coining moulding board. The coining method is one of the hot coining method, the ultraviolet curing coining method, and micro-contact coining method. The secondary coining moulding board produced by the method comprises the substrate and a plurality of identical distributed feedback grating structures of semiconductor lasers for DWDM systems formed on the substrate. The invention has the advantages of high grating resolution, good reproducibility, low production cost and high productivity.
Description
Technical field
The present invention relates to a kind of nano impression template.Particularly relate to and a kind ofly have grating resolution height, good reproducibility, and cost of manufacture is low, the high nano impression of production efficiency is with the method for making and the secondary impression block thereof of secondary impression block.
Background technology
The nanostructured manufacturing technology is the key foundation of whole nanometer technology, is one of difficult problem of needing to be resolved hurrily of our times scientific research.Traditional process technology can not satisfy the needs of nanometer technology develop rapidly.In the process of exploitation VLSI (very large scale integrated circuit) technology, people have developed some can carry out the technology of nanoscale processing, for example electron beam and x x ray exposure x, and focused ion beam is processed, scan-probe lithographic technique etc.Though electron beam lithography resolution height yields poorly, the processing cost height can only be used for the processing key figure.X X-ray lithography X (using the x light of wavelength 0.1～10nm) causes photoetching with high costs because of the rapid many materials that destroy in mask and the lens of high-energy radiation meeting.Because conventional lens can not see through extreme ultraviolet, so strong light absorption in the dioptric system, extreme ultraviolet line photolithography (using the ultraviolet light of wavelength 10～70nm) must adopt the high reflective optical system of precision, causes cost sharp increase equally.
Owing to be subjected to synthesized source and equipment price factor affecting such as optical mirror slip, electron focusing, the equipment research and development expense that drops into above-mentioned several photoetching techniques sharply rises violently, so huge input can't be born most enterprises and scientific research institution at all, is difficult to realize industrialization.A kind of alternative techniques cheaply of market in urgent need is used for the following characteristic line breadth processing of 100nm, to satisfy pressing for of IC manufacturing of future generation.
At this challenge, the U.S. " University of Minnesota nanostructured laboratory " has carried out initiative research since nineteen ninety-five, the new technology that they propose and have showed a kind of being called " nano impression " (nanoimprint lithography)." nano impression " is a kind of brand-new nano graph clone method.Be characterized in having ultrahigh resolution, high yield, low cost.High resolving power is because it does not have diffraction phenomena in the optical exposure and the scattering phenomenon in the electron beam exposure.High yield is because it can parallel processing as optical exposure, makes hundreds and thousands of devices simultaneously.Low cost is because it needs complicated optical system or need complicated electromagnetic focusing system as electron beam exposure apparatus unlike the optical exposure machine.Therefore nano impression is expected to become a kind of suitability for industrialized production technology, has fundamentally opened up the bright prospects that various nano-devices are produced.What is more important, nanometer embossing are expected to break through the world-technology difficult problem that tens nano-scale linewidth IC make as early as possible, have powerful competitive power, have fundamentally showed the bright prospects that nano-device is produced.
Because the raster graphic small-sized (the grizzly bar size is about 100nm) of distributed feed-back (DFB) semiconductor laser, general process is to realize by the method that the deep ultraviolet lasers two-beam interference exposes at present.But adopt the two-beam interference exposure method, can only produce DFB grating, can't on same epitaxial wafer, carry out the making of multiple-wavelength laser grating simultaneously, can't carry out the making of labyrinth grating with uniform period structure.Can on same epitaxial wafer, make the phase-shift structure DFB grating with different cycles, its cost of manufacture height, length consuming time though adopt electron beam exposure method.
In addition, adopt double beam interferometry and electron beam exposure legal system to make the DFB grating, all have the shape of grating and the repeated bad problem of dutycycle, thereby cause the grating coupling coefficient of laser instrument inconsistent, influence the side mode suppression ratio of device, and caused device yield to reduce; And produced DFB grating edge possibility is rough, causes having serious scattering effect in the semiconductor laser cavity, has influenced the luminescence efficiency of device.If from the surface scan Electronic Speculum picture of the DFB grating that adopts the double beam interferometry made, can see that its grating lines are very coarse, dutycycle is inhomogeneous, poor repeatability.
The making that the method for employing nano impression is carried out the DFB grating can overcome the above problems well, can on same epitaxial wafer, produce the Distributed Feedback Laser grating of multi-wavelength at low cost simultaneously, and produced grating lines are smooth, and dutycycle is even, good reproducibility.
Although adopt nanometer embossing can reduce the cost of manufacture of semiconductor laser greatly, but nano impression normally adopts electron beam lithography to make with template, its price is still very expensive and process velocity is very slow, adopt the method for electron beam exposure to make the cost of two inches imprint mold plates (evenly being covered with the DFB grating) above 5000 dollars, and need tens hours, be not suitable for producing in batches.Though electron beam lithography has been developed the deformable hot spot at present, and limit scattered through angles projection photon beam photoetching technique, promoted process velocity gradually, but the fabrication and processing cost and the production capacity of the large tracts of land that faces the future (4 inches, more than 6 inches and 6 inches) impression block, these improved electron beam lithographies still can't satisfy the requirement of direct processing.
On the other hand, the formula in serviceable life of impression block is limited, particularly impression block in use needs to experience periodic rugged surroundings such as high temperature, high pressure and chilling, the impression block internal stress that is wherein caused has had a strong impact on its serviceable life, has caused the increase of present impression cost equally.Therefore require further to reduce the cost of manufacture of nano impression, really make nanometer embossing can realize producing cheaply, at first need to solve the cost of manufacture problem of impression block.
Summary of the invention
Technical matters to be solved by this invention is, a kind of cost that can effectively reduce the imprint mold plate is provided, thereby further reduced the production cost of semiconductor DFB, have grating resolution height, good reproducibility, the nano impression that production efficiency the is high method for making and the secondary impression block thereof of secondary impression block.
The technical solution adopted in the present invention is: a kind of nano impression method for making and secondary impression block thereof of secondary impression block.Wherein, the nano impression method for making of secondary impression block, be to use an impression block that is carved with the distributed feedback grating pattern, utilize substep to repeat method for stamping and on another substrate, print continuously, this substrate is produced to have the identical diameter of distributed feedback grating pattern a plurality of and on impression block be the secondary impression block of 2～4 inches sizes.
A described impression block that is carved with the distributed feedback grating pattern is to utilize direct electronic beam writing technology to make 100～1000 distributed feedback grating structures on a template, has phase-shift structure in the middle of distributed feedback grating.
Described method for stamping is to adopt thermal marking method, or adopts the ultra-violet curing method for stamping, or a kind of in little contact printing method.
The concrete method for making of described secondary impression block comprises the steps:
1) utilizes direct electronic beam writing technology to produce to have an impression block of the distributed feedback grating pattern of phase-shift structure;
2) on the secondary substrate, evenly be coated with one deck thermal plastic high polymer photoresist, and photoresist is heated to more than the glass transition temperature;
3) utilize mechanical force that impression block is pressed in the photoresist of hot mastication, and kept high temperature, high pressure 1～10 minute, the thermal plastic high polymer photoresist is filled in the nanostructured of an impression block;
4) treat photoresist (13) cooling curing after, relief pressure breaks away from the secondary substrate with impression block;
5) impression block of translation, repeating step 3 and 4 repeats the figure of an impression block of imprinting and copying (11) on photoresist;
6) photoresist that has coining pattern to the secondary substrate surface carries out the residual primer of reactive ion etching removal;
7) having the secondary substrate surface sputtering skim metal film of photoresist figure;
8) adopt photoresist that stripping technology removes the secondary substrate surface with and the metal film that covers above, and the secondary substrate surface does not have the metal membrane-coating that the photoresist place covers and remains;
9) last, the metal film that remains with the secondary substrate surface adopts the method for reactive ion etching as mask, and the secondary substrate is produced needed secondary impression block with phase shift type distributed feedback grating structure.
10) adopt different secondary substrates respectively, repeating step 2 to 9 is produced a plurality of secondary impression blocks.
A kind of secondary impression block that adopts nano impression to make of the method for making of secondary impression block includes substrate, is formed with the distributed feedback grating structure of most identical complete dense wavelength division multiplexing systems with semiconductor laser on substrate.
The distributed feedback grating cycle of described distributed feedback grating structure is: d
i=λ
i/ (2n
Eff), d wherein
iBe grating cycle, λ
iFor meeting the laser wavelength that ITU-T requires, its value is 1525～1565nm at C-band, is 1565～1605nm at L-band, and the wavelength interval is 0.8nm or 0.4nm, n
EffBe the effective refractive index of laser material, representative value is 3～3.5.
The nano impression of the present invention method for making and the secondary impression block thereof of secondary impression block, employing is on the basis of an impression block that is carved with a small amount of figure, make the secondary impression block with the method that substep repeats to impress, adopt the secondary impression block to impress then and make the DFB grating.Because an impression block only includes a small amount of DFB raster graphic, few when therefore taking the electron beam exposure apparatus machine, even need to revise repeatedly, cost is also lower.And adopt a same impression block can produce a plurality of secondary impression blocks, and can use repeatedly, be suitable for producing in enormous quantities, cost is low, good reproducibility.Adopt the technology of the nano-imprinting method making dfb semiconductor laser instrument grating of secondary impression block, have grating resolution height, good reproducibility, and cost of manufacture is low, the characteristics that production efficiency is high.
Description of drawings
Fig. 1 adopts nano impression to make the synoptic diagram of secondary impression block in conjunction with metal lift-off material;
Fig. 2 is the structural representation of secondary impression block of the present invention;
Fig. 3 is the enlarged diagram of each DFB optical grating construction among Fig. 2;
Fig. 4 adopts the secondary impression block to make hyperchannel DWDM chip of laser diagrammatic series of views on same epitaxial wafer;
Fig. 5 is the process flow diagram of nano impression.
Wherein:
11: templates 12: secondary substrate
13: photoresist layer 12-1,12-2,12-3 ..., 12-n: the secondary impression block
14: metal film 21: substrate
22:DFB optical grating construction 41: epitaxial wafer
51: impression block 52: photoresist layer
53: epitaxial wafer
Embodiment
Below in conjunction with the embodiment accompanying drawing method for making and the secondary impression block thereof of nano impression of the present invention with the secondary impression block made a detailed description.
The nano impression of the present invention method for making of secondary impression block, be to use an impression block that is carved with distributed feed-back (DFB) grating pattern, utilize substep to repeat method for stamping and on another substrate, print continuously, this substrate is produced to have the identical diameter of distributed feed-back (DFB) grating pattern a plurality of and on impression block be the secondary impression block of 2～4 inches sizes.
Wherein, a described impression block that is carved with distributed feed-back (DFB) grating pattern is to utilize direct electronic beam writing technology to make 100～1000 DFB optical grating constructions on a template, has phase-shift structure in the middle of the DFB grating; Described method for stamping is to adopt thermal marking method, or adopts cold blocking (ultra-violet curing impression) method, or a kind of in little contact printing method.
The concrete method for making of the secondary impression block that described nano impression is used comprises the steps: as shown in Figure 1
1) utilizes direct electronic beam writing technology to produce to have an impression block 11 of the DFB grating pattern of phase-shift structure;
2) on secondary substrate 12, evenly be coated with one deck thermal plastic high polymer photoresist 13, and photoresist is heated to glass transition temperature more than 105 ℃;
3) utilize mechanical force that an impression block is pressed in the photoresist layer 13 of hot mastication, and kept high temperature, high pressure 1～10 minute, thermal plastic high polymer photoresist 13 is filled in the nanostructured of an impression block 11;
4) treat the photoresist cooling curing after, relief pressure breaks away from secondary substrates 12 with impression block 11;
5) impression block 11 of translation, repeating step 3 and 4 repeats the figure of an impression block 11 of imprinting and copying on secondary substrate 22;
6) photoresist that has coining pattern 13 to secondary substrate 12 surfaces carries out the residual primer of reactive ion etching removal;
7) the secondary substrate 12 surface sputtering skim metal films 14 that having photoresist figure 13;
8) adopt photoresist 13 that the method peel off removes secondary substrate 12 surfaces with and the metal film that covers above, and the metal membrane-coating of secondary substrate 12 surface no photoresist places coverings remains;
9) last, the metal film 14 that remains with the secondary substrate surface adopts the method for reactive ion etching as mask, and the secondary substrate is produced needed secondary impression block 12-1 with phase shift type distributed feedback grating structure.
10) adopt different secondary substrates respectively, repeating step 2 to 9 can utilize same impression block 11 to produce a plurality of secondary impression block 12-2,12-3 ..., 12-n.
More than the 1-4 step for typical thermal imprint process process, can also adopt the method for making of existing cold blocking (ultra-violet curing impression) as follows:
1) at first utilize direct electronic beam writing technology to make an impression block that has the DFB grating pattern, mould material must use the materials such as quartz that can allow ultraviolet ray penetrate;
2) then evenly be coated with one deck low-viscosity at the secondary substrate surface, to the liquid macroimolecule photoresist of ultraviolet light sensitivity;
3) with impression block with aim at the secondary substrate after, impression block is pressed into photoresist layer and irradiating ultraviolet light makes photoresist polymerization reaction take place solidified forming;
4) relief pressure then breaks away from the secondary substrate with an impression block, carries out the demoulding.Carry out the making of other processing step of secondary impression block according to above described method of the 5-10 step then.
Perhaps adopt known little contact printing method to make the 1-4 above step:
1) at first utilize direct electronic beam writing technology to make an impression block that has the DFB grating pattern;
2) then at surperficial coated one deck liquid of an impression block;
3) impression block that will be coated with liquid contacts with the secondary substrate surface, makes the monofilm that forms one deck self assembly in the place that the secondary substrate contacts with impression block;
4) impression block is broken away from the secondary substrate.Carry out the making of other processing step of secondary impression block according to above described method of the 5-10 step then.
As shown in Figure 2, the secondary impression block that adopts nano impression to make of the method for making of secondary impression block, include substrate 21, on substrate 21, be formed with DFB (distributed feed-back) optical grating construction 22 of most identical DWDM (dense wavelength division multiplexing system) with complete semiconductor laser.
As shown in Figure 3, the distributed feedback grating cycle of described distributed feedback grating structure 22 is: d
i=λ
i/ (2n
Eff), d wherein
iBe grating cycle, λ
iFor meeting the laser wavelength that ITU-T requires, its value is 1525～1565nm at C-band, is 1565～1605nm at L-band, and the wavelength interval is 0.8nm or 0.4nm, n
EffBe the effective refractive index of laser material, representative value is 3～3.5.
Fig. 4 adopts the nanometer embossing of secondary template to make the synoptic diagram of DWDM with semiconductor laser chip DFB grating.By the stamping technique that adopts the secondary impression block DFB grating that can to make a plurality of 40 complete channel spacings simultaneously on same epitaxial wafer 41 be the 100GHz laser instrument, the excitation wavelength of every laser instrument is λ 1, λ 2 ... λ 39, and λ 40.
The concrete nano impression manufacturing process of grating generally includes five step process as shown in Figure 5;
1) utilizes method making secondary impression block 51 as described in Figure 1, wherein comprised a plurality of complete distributed feedback grating patterns that are spaced apart 100GHz as shown in Figure 2 on the secondary impression block 51; Waiting that epitaxial wafer 53 surfaces that make the DFB grating evenly are coated with one deck thermal plastic high polymer PMMA photoresist material 52;
2) photoresist layer on the epitaxial wafer 53 52 is heated to glass transition temperature more than 105 ℃ (as 135 ℃), utilize mechanical force the secondary impression block to be pressed in the photoresist layer of hot mastication, and kept high temperature, high pressure 1～10 minute, the thermal plastic high polymer photoresist is filled in the nanostructured of secondary impression block;
3) treat the photoresist cooling curing after, relief pressure breaks away from photoresist layers 52 with secondary impression block 51;
4) then epitaxial wafer 53 is carried out reactive ion etching (RIE) and remove residual photoresist, promptly the optical grating construction on the secondary impression block 51 can be copied on the photoresist 52;
5) last, as mask, adopt the method for dry etching or wet etching with the photoresist 52 that impresses out, on epitaxial wafer 53, produce needed DFB optical grating construction.
Claims (6)
1. a nano impression is with the method for making of secondary impression block, it is characterized in that, be to use an impression block that is carved with the distributed feedback grating pattern, utilize substep to repeat method for stamping and on another substrate, print continuously, this substrate is produced to have the identical diameter of distributed feedback grating pattern a plurality of and on impression block be the secondary impression block of 2～4 inches sizes.
2. the nano impression according to claim 1 method for making of secondary impression block, it is characterized in that, a described impression block that is carved with the distributed feedback grating pattern is to utilize direct electronic beam writing technology to make 100～1000 distributed feedback grating structures on a template, has phase-shift structure in the middle of distributed feedback grating.
3. nano impression according to claim 1 is characterized in that with the method for making of secondary impression block described method for stamping is to adopt thermal marking method, or adopts the ultra-violet curing method for stamping, or a kind of in little contact printing method.
4. nano impression according to claim 1 is characterized in that with the method for making of secondary impression block the concrete method for making of described secondary impression block comprises the steps:
1) utilizes direct electronic beam writing technology to produce to have the impression block (11) of the distributed feedback grating pattern of phase-shift structure;
2) go up evenly coating one deck thermal plastic high polymer photoresist (13) at secondary substrate (12), and photoresist (13) is heated to more than the glass transition temperature;
3) utilize mechanical force that an impression block (11) is pressed in the photoresist of hot mastication (13), and kept high temperature, high pressure 1～10 minute, thermal plastic high polymer photoresist (13) is filled in the nanostructured of an impression block (11);
4) treat photoresist (13) cooling curing after, relief pressure breaks away from secondary substrate (12) with an impression block (11);
5) impression block of translation (11), repeating step 3 and 4 repeats the figure of an impression block of imprinting and copying (11) on photoresist (13);
6) photoresist that has coining pattern (13) to secondary substrate (12) surface carries out the residual primer of reactive ion etching removal;
7) having secondary substrate (12) the surface sputtering skim metal film (14) of photoresist figure;
8) adopt photoresist (13) that stripping technology removes secondary substrate (12) surface with and the metal film (14) that covers above, and the metal film (14) that secondary substrate (12) the no photoresist in surface (13) is located to cover is retained;
9) last, the metal film (14) that remains with secondary substrate (12) surface adopts the method for reactive ion etching as mask, and secondary substrate (12) is produced needed secondary impression block (12-1) with phase shift type distributed feedback grating structure.
10) adopt different secondary substrates respectively, repeating step 2 to 9 produce a plurality of secondary impression blocks (12-2,12-3 ..., 12-n).
5. secondary impression block that adopts the described nano impression of claim 1 to make of the method for making of secondary impression block, it is characterized in that, include substrate (21), on substrate (21), be formed with the distributed feedback grating structure (22) of most identical complete dense wavelength division multiplexing systems with semiconductor laser.
6. the secondary impression block that employing nano impression according to claim 5 is made of the method for making of secondary impression block is characterized in that the distributed feedback grating cycle of described distributed feedback grating structure (22) is: d
i=λ
i/ (2n
Eff), d wherein
iBe grating cycle, λ
iFor meeting the laser wavelength that ITU-T requires, its value is 1525～1565nm at C-band, is 1565～1605nm at L-band, and the wavelength interval is 0.8nm or 0.4nm, n
EffBe the effective refractive index of laser material, representative value is 3～3.5.
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|---|---|---|---|
| CNA2008101544303A CN101446759A (en) | 2008-12-24 | 2008-12-24 | Method for producing secondary coining moulding board for nanometer coining and secondary coining moulding board thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101544303A CN101446759A (en) | 2008-12-24 | 2008-12-24 | Method for producing secondary coining moulding board for nanometer coining and secondary coining moulding board thereof |
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| CN102490401A (en) * | 2011-10-29 | 2012-06-13 | 合肥乐凯科技产业有限公司 | Hardened film for in-mold decoration and preparation method of hardened film |
| CN102508411A (en) * | 2011-11-25 | 2012-06-20 | 中国科学院微电子研究所 | Method for producing X-ray diffraction optical element |
| CN103149615A (en) * | 2013-03-14 | 2013-06-12 | 上海交通大学 | Preparation method of multilayer metal grating |
| CN105911815A (en) * | 2016-05-24 | 2016-08-31 | 京东方科技集团股份有限公司 | Manufacturing system and method of nano-imprinting template |
| CN106094085A (en) * | 2016-06-21 | 2016-11-09 | 青岛海信宽带多媒体技术有限公司 | Phase-shifted grating manufacture method and phase-shifted grating |
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| CN102490401A (en) * | 2011-10-29 | 2012-06-13 | 合肥乐凯科技产业有限公司 | Hardened film for in-mold decoration and preparation method of hardened film |
| CN102508411A (en) * | 2011-11-25 | 2012-06-20 | 中国科学院微电子研究所 | Method for producing X-ray diffraction optical element |
| CN103149615A (en) * | 2013-03-14 | 2013-06-12 | 上海交通大学 | Preparation method of multilayer metal grating |
| CN106153212A (en) * | 2015-04-17 | 2016-11-23 | 国家电网公司 | A kind of surface acoustic wave sensor manufacture method based on nano-imprint process |
| CN105911815B (en) * | 2016-05-24 | 2019-07-05 | 京东方科技集团股份有限公司 | The manufacturing system and method for nano-imprint stamp |
| CN105911815A (en) * | 2016-05-24 | 2016-08-31 | 京东方科技集团股份有限公司 | Manufacturing system and method of nano-imprinting template |
| CN106094085A (en) * | 2016-06-21 | 2016-11-09 | 青岛海信宽带多媒体技术有限公司 | Phase-shifted grating manufacture method and phase-shifted grating |
| CN106094085B (en) * | 2016-06-21 | 2019-07-02 | 青岛海信宽带多媒体技术有限公司 | Phase-shifted grating production method and phase-shifted grating |
| CN108061931A (en) * | 2016-11-09 | 2018-05-22 | 三星电子株式会社 | Back light unit and the method that manufactures the back light unit for 3D rendering display |
| CN107121806A (en) * | 2017-05-19 | 2017-09-01 | 合肥市惠科精密模具有限公司 | A kind of Micro LED LCDs based on imprint process |
| CN107817547A (en) * | 2017-12-08 | 2018-03-20 | 深圳市华星光电技术有限公司 | The manufacture method of grating |
| CN108091552A (en) * | 2017-12-29 | 2018-05-29 | 长沙新材料产业研究院有限公司 | A kind of method that microwave structure pattern is prepared in light-transmissive substrates |
| CN108091552B (en) * | 2017-12-29 | 2021-03-02 | 长沙新材料产业研究院有限公司 | Method for preparing micro-nano structure pattern on light-transmitting substrate |
| CN109683445A (en) * | 2019-01-10 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of joining method of nano-pattern, nano impression plate, grating and production method |
| CN111606300A (en) * | 2020-05-26 | 2020-09-01 | 杭州欧光芯科技有限公司 | Method for manufacturing high aspect ratio nano grating |
| CN112162115A (en) * | 2020-09-04 | 2021-01-01 | 杭州探真纳米科技有限公司 | Manufacturing method of large-aspect-ratio diamond tip AFM probe |
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