CN101442148A - Microstrip-waveguide transition probe and impedance matching method - Google Patents
Microstrip-waveguide transition probe and impedance matching method Download PDFInfo
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- CN101442148A CN101442148A CNA2008102398893A CN200810239889A CN101442148A CN 101442148 A CN101442148 A CN 101442148A CN A2008102398893 A CNA2008102398893 A CN A2008102398893A CN 200810239889 A CN200810239889 A CN 200810239889A CN 101442148 A CN101442148 A CN 101442148A
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Abstract
The invention discloses a method for matching a microstrip-waveguide conversion probe and impedance, which belongs to the technical field of electromagnetic fields and microwave circuits. The method comprises: designing and obtaining the size of the conversion probe according to the back-to-back structure of the microstrip-waveguide conversion probe; placing a micro strip in the middle of the back-to-back structure of the microstrip-waveguide conversion probe; performing computer simulation on the width of the conversion micro strip, and obtaining the input impedance of the conversion probe; and utilizing a one-fourth wavelength impedance conversion line to match the input impedance into 50 ohms. The method combines design of the size of the conversion probe and impedance calculation, namely impedance matching design is completed when the microstrip-waveguide conversion probe is designed, conveniently obtains the input impedance of the conversion probe, and further realizes design of a matching circuit. Moreover, the method is simple to operate, has simple and convenient process, simplifies the matching circuit, and improves the precision of impedance matching.
Description
Technical field
The present invention relates to electromagnetic field and technical field of microwave circuits, the method for particularly a kind of little band-waveguide transitions probe and impedance matching.
Background technology
Along with developing rapidly of microwave, millimeter wave transceiving system, require more compact little band-waveguide transition.Little band-waveguide transition form at present commonly used mainly contains: ridge waveguide transition, to utmost point fin-line transition and little band probe transitions or the like.Wherein, little band probe transitions is the little band-waveguide transition form that is most widely used at present, and its advantage is: insert that loss is low, return loss is little, bandwidth, and compact conformation, easy to process, loading and unloading are easily, are particularly suitable for Millimeter Wave Applications.
In the design process of little band probe, need be with its input impedance matching to 50 ohm, so that be connected, and then reduce standing wave, improve the stability of power gain and system with late-class circuit (its input and output impedance is generally 50 ohm).The little band probe of traditional conversion impedance matching methods is: by the size of the little band probe of software design, obtain the input impedance of little band probe by Computer Simulation; Input impedance is updated in other impedance matching software designs match circuit, and then will be impedance-matched to 50 ohm.But, this method more complicated that operates, process is loaded down with trivial details, and the impedance matching circuit complexity, and the impedance matching precision is not high.
Summary of the invention
In order to simplify the design process of little band-waveguide transitions probe, improve the impedance matching precision, the invention provides the method for a kind of little band-waveguide transitions probe and impedance matching, described method comprises:
Steps A: according to little band-waveguide transitions probe structure back-to-back, design obtains the transition probe size;
Step B: in the middle of described little back-to-back band-waveguide transitions probe structure, place one section microstrip line;
Step C: the width of the described microstrip line of conversion carries out Computer Simulation, obtains the input impedance of transition probe;
Step D: utilize 1/4 wavelength impedance conversion line with described input impedance matching to 50 ohm.
Described little back-to-back band-waveguide transitions probe structure is made of two symmetrical fully transition probe structures, and described little back-to-back band-waveguide transitions probe structure central point impedance is pure real impedance.
Described step C is specially: the width of the described microstrip line of conversion carries out Computer Simulation, and with the simulation result contrast of simulation result with the transition probe structure that does not have described microstrip line; When described microstrip line during at a certain width, its characteristic impedance is the same with described little back-to-back band-waveguide transitions probe structure central point impedance, this moment, simulation result was consistent with the transition probe result's who does not have described microstrip line simulation result, obtained the input impedance of described transition probe according to the width of described microstrip line at this moment.
Described input impedance is pure real impedance.
Described impedance conversion line is used for described pure real impedance is converted to the needed impedance of late-class circuit.
Beneficial effect: the present invention combines the design and the impedance computation of the size of transition probe own, promptly in design little band-waveguide transitions probe, finish designing impedance matching, obtained the input impedance of transition probe very easily, and then realized the match circuit design; This method is simple to operate, and process is easy, and has simplified match circuit, has mentioned the accuracy of impedance matching.
Description of drawings
Fig. 1 is the 3 D stereo schematic diagram of the little back-to-back band of the embodiment of the invention-waveguide transitions probe structure;
Fig. 2 is the generalized section of the little back-to-back band of the embodiment of the invention-waveguide transitions probe structure;
Fig. 3 is the 3 D stereo schematic diagram that the embodiment of the invention has been placed the little back-to-back band-waveguide transitions probe structure of microstrip line;
Fig. 4 is that the embodiment of the invention utilizes 1/4 wavelength impedance conversion line to realize the transition probe and the match circuit generalized section of impedance matching;
Fig. 5 is the little band-waveguide transitions probe that provides of the embodiment of the invention and the method flow diagram of impedance matching;
Fig. 6 is that the small-signal that little band-waveguide transitions probe structure that the embodiment of the invention provides is applied to the Ka wave band inserts loss test figure;
Fig. 7 is the input/output port reflection measurement figure that little band-waveguide transitions probe structure that the embodiment of the invention provides is applied to the Ka wave band.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
Little band-waveguide transitions the probe that the embodiment of the invention provides and the method for impedance matching mainly comprise following process: at first according to little band-waveguide transitions probe structure (as shown in Figure 1) back-to-back, design obtains the transition probe size, can guarantee that like this this structure centre point impedance is pure real impedance, the probe profile that design obtains as shown in Figure 2; Secondly place one section microstrip line in the middle of this little back-to-back band-waveguide transitions probe structure, the width by this section of conversion microstrip line carries out Computer Simulation, obtains this pure real impedance value, and the schematic three dimensional views of this part as shown in Figure 3; The pure real impedance that will obtain by 1/4 wavelength impedance conversion line matches 50 ohm at last, has realized the probe of impedance matching and match circuit profile as shown in Figure 4 by this impedance conversion line.Elaborate the technical scheme that the embodiment of the invention provides below.
Referring to Fig. 5, the embodiment of the invention provides the method for a kind of little band-waveguide transitions probe and impedance matching, and this method may further comprise the steps:
Step 101:,, select suitable standard square wave guide physical dimension with reference to international waveguide dimensions standard according to operating frequency;
In actual applications, can select suitable standard square wave guide physical dimension by checking the mode of international waveguide dimensions standard scale; Standard square wave guide physical dimension comprises the length and the width of square wave guide;
Step 102:, determine that the probe in the square wave guide is positioned at apart from waveguide short face 1/4 wavelength place according to the pairing wavelength of operating frequency central point;
Step 103: utilize 3 D electromagnetic field simulation software to set up a little back-to-back band-waveguide transitions probe structure;
Little back-to-back band-waveguide transitions probe structure comprises: two symmetrical fully rectangle square wave guides, two duplicate transition probes, and substrate and air or the like; Two transition probe structures are symmetrical fully, and when utilizing this symmetrical structure design transition probe size, it is little to satisfy the working frequency range standing internal wave, and loss is hanged down when requiring, and has guaranteed that also this symmetrical structure central point impedance is pure real impedance;
Step 104: probe length L and width W in the little back-to-back band of optimal design-waveguide transitions probe structure;
Probe after the optimization can make it obtain good standing wave in working frequency range and insert drain performance, the impedance of little back-to-back band-waveguide transitions probe structure central spot at this moment, the input impedance value that is probe has only real part and does not have imaginary part, supposes that this real impedance value is Zin; Input impedance is pure real impedance.
Step 105: place one section microstrip line in the middle of little band-waveguide transitions probe structure back-to-back, the width of this section of conversion microstrip line carries out Computer Simulation, obtains the input impedance of transition probe;
In actual applications, the microstrip line characteristic impedance of placing in the centre when this section and the pure real part input impedance phase of above-mentioned transition probe have increased standing wave and insertion signal and the little back-to-back band-waveguide transitions probe structure that does not increase microstrip line consistent of the little back-to-back band-waveguide transitions probe structure of microstrip line simultaneously; According to this principle, the width by the conversion microstrip line carries out Computer Simulation, and with the simulation result contrast of simulation result with the transition probe structure that does not have microstrip line, establishes when the width of microstrip line is Wmid two kinds of simulation result unanimities; Then this moment, width was the pairing characteristic impedance of Wmid microstrip line, was the input impedance Zin of transition probe;
Step 106: utilize 1/4 wavelength impedance conversion line to incite somebody to action the input impedance of little band-waveguide transitions probe back-to-back and transform to 50 ohm;
As shown in Figure 4, can be according to formula
, obtain the characteristic impedance Z of 1/4 wavelength impedance conversion line
λ/4, and then calculate the width W R of impedance conversion line; The impedance conversion line is used for pure real impedance is converted to the needed impedance of late-class circuit.
Little band-waveguide transitions the probe that the embodiment of the invention provides and the method for impedance matching, the design and the impedance computation of the size of transition probe own are combined, promptly in design little band-waveguide transitions probe, finished designing impedance matching, obtain the input impedance of transition probe very easily, and then realized the match circuit design.This method is simple to operate, and process is easy, and has simplified match circuit, has mentioned the accuracy of impedance matching.
Little band-waveguide transitions the probe that the embodiment of the invention provides and the method for impedance matching are simple and practical, the module of making the Ka wave band insert loss little (0.5dB) (as shown in Figure 6), standing wave good (in quite wide frequency band less than-20dB) (as shown in Figure 7); Link to each other with final-stage power amplifier and to have realized 50 good ohms impedance match, satisfied little conversion of taking waveguide to fully, and the requirement of impedance matching.In addition, the technical scheme that provides of the embodiment of the invention can also be applied in the input impedance calculating and designing impedance matching of the little band of any wave band-waveguide transitions structure.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the method for little band-waveguide transitions probe and impedance matching is characterized in that described method comprises:
Steps A: according to little band-waveguide transitions probe structure back-to-back, design obtains the transition probe size;
Step B: in the middle of described little back-to-back band-waveguide transitions probe structure, place one section microstrip line;
Step C: the width of the described microstrip line of conversion carries out Computer Simulation, obtains the input impedance of transition probe;
Step D: utilize 1/4 wavelength impedance conversion line with described input impedance matching to 50 ohm.
2. the method for little band as claimed in claim 1-waveguide transitions probe and impedance matching, it is characterized in that, described little back-to-back band-waveguide transitions probe structure is made of two symmetrical fully transition probe structures, and described little back-to-back band-waveguide transitions probe structure central point impedance is pure real impedance.
3. the method for little band as claimed in claim 1-waveguide transitions probe and impedance matching, it is characterized in that, described step C is specially: the width of the described microstrip line of conversion carries out Computer Simulation, and with the simulation result contrast of simulation result with the transition probe structure that does not have described microstrip line; When described microstrip line during at a certain width, its characteristic impedance is the same with described little back-to-back band-waveguide transitions probe structure central point impedance, this moment, simulation result was consistent with the transition probe result's who does not have described microstrip line simulation result, obtained the input impedance of described transition probe according to the width of described microstrip line at this moment.
4. as the method for claim 1 or 3 described little band-waveguide transitions probes and impedance matching, it is characterized in that described input impedance is pure real impedance.
5. the method for little band as claimed in claim 4-waveguide transitions probe and impedance matching is characterized in that, described impedance conversion line is used for described pure real impedance is converted to the needed impedance of late-class circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008102398893A CN101442148B (en) | 2008-12-19 | 2008-12-19 | Microstrip-waveguide transition probe and impedance matching method |
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| CN2008102398893A CN101442148B (en) | 2008-12-19 | 2008-12-19 | Microstrip-waveguide transition probe and impedance matching method |
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| CN101442148A true CN101442148A (en) | 2009-05-27 |
| CN101442148B CN101442148B (en) | 2012-07-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104331535A (en) * | 2014-09-22 | 2015-02-04 | 安徽华东光电技术研究所 | V waveband microstrip probe type waveguide microstrip switching circuit and parameter design method |
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| US4453142A (en) * | 1981-11-02 | 1984-06-05 | Motorola Inc. | Microstrip to waveguide transition |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104331535A (en) * | 2014-09-22 | 2015-02-04 | 安徽华东光电技术研究所 | V waveband microstrip probe type waveguide microstrip switching circuit and parameter design method |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Microelectronics Institute, Chinese Academy of Sciences, 3 north earth road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |