CN101442096B - Vertical-structure gallium nitride light-emitting diode element and its manufacturing method - Google Patents
Vertical-structure gallium nitride light-emitting diode element and its manufacturing method Download PDFInfo
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Abstract
A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
Description
The application is that application number is 200710097453.0, the applying date be April 29 in 2007 day, be called dividing an application of " vertical gallium nitride based light emitting diode and manufacture method thereof ".
The cross reference of related application
The application requires korean patent application 10-2006-0079703 number submitted to Korea S Department of Intellectual Property on August 23rd, 2006 and the priority of the korean patent application submitted to Korea S Department of Intellectual Property on February 21st, 2007 10-2007-0017519 number, and its content is hereby expressly incorporated by reference.
Technical field
The present invention relates to vertical gallium nitride based light emitting diode (hereinafter, being called " vertical GaN base LED ") and manufacture method thereof, it can strengthen the reliability of LED.
Background technology
Usually, nitride-based semiconductor LED is grown on the Sapphire Substrate (substrate), but this Sapphire Substrate is the rigidity non-conductor, and has relatively poor thermal conductivity.Therefore, reduce manufacturing cost and have limitation in the size by dwindling nitride-based semiconductor LED or by improving optical energy and chip performance.Especially, be the key that obtains high-energy LED owing to use high electric current, the heat sink problem that therefore solves LED is extremely important.In order to address this problem, proposed to use vertical nitride based LED, wherein (laser lift-off LLO) removes Sapphire Substrate by adopting laser lift-off.
Hereinafter, will describe the problem of traditional GaN base LED referring to figs. 1A to Fig. 1 F and Fig. 2 in detail.
Figure 1A to 1F is the profile that traditional vertical GaN-based LED manufacture method is shown successively.
Shown in Figure 1A, the ray structure 120 that is made of the GaN based semiconductor is formed on the Sapphire Substrate 110.Ray structure 120 comprises n-type GaN based semiconductor 121, the active layer (active layer) 122 that constitutes by GaN/InGaN layer, and p-type GaN based semiconductor 123 with multi-quantum pit structure, and these layers stack gradually formation.
Next, shown in Figure 1B, on p-type GaN based semiconductor 123, form a plurality of positive electrodes (p-electrode) 150.Each p-electrode 150 all plays the effect of electrode and reflectance coating.
Secondly, shown in Fig. 1 C, ray structure 120 handles by RIE (reactive ion etching) or similar processing is divided into the LED unit.
Then, shown in Fig. 1 D, on the whole structure that obtains, form diaphragm 140, make p-electrode 150 be exposed to the outside.Next, on diaphragm 140 and p-electrode 150, form metal seed layer 160, thereby by utilizing the structural support layers 170 that metal seed layer 160 is electroplated or chemical plating formation is made of coating.Structural support layers 170 is as the electrode of supporting layer and final LED.At this moment, also be formed with structural support layers 170 in the zone between ray structure 120.Therefore, the structural support layers 170 that is formed in this zone has relatively large thickness.
Secondly, shown in Fig. 1 E, Sapphire Substrate 110 is handled by LLO and is separated with ray structure 120.
Subsequently, shown in Fig. 1 F, form negative electrode (n-electrode) 180 above the n-type GaN based semiconductor 121 that exposes by separation Sapphire Substrate 110 at each.Structural support layers 170 is cut apart by cutting (dicing) or laser scribing (laser scribing) process quilt and is formed a plurality of GaN base LED 100.
Yet, the structural support layers 170 with relatively large thickness being cut or during laser scribing, ray structure 120 may be broken or be damaged.
In addition, when forming structural support layers 170,, can produce bending so comprise the total of structural support layers 170 because ray structure 120 is different with the thermal coefficient of expansion that is formed at the structural support layers 170 between each ray structure 120.Therefore, be difficult to carry out subsequently processing.
In addition, the atom that constitutes metal seed layer 160 is penetrated in the active layer 122, and junction leakage (junction leakage) or short circuit may take place like this.
As mentioned above, when vertical GaN base LED be according to correlation technique make the time, the reliability of vertical GaN base LED can be owing to the problems referred to above reduce.
Simultaneously, can produce another kind of traditional vertical GaN base LED according to the described manufacture method of reference Fig. 2.
Fig. 2 is the profile that is used to illustrate another kind of traditional vertical GaN based LED construction.
As shown in Figure 2, vertical GaN base LED has the structural support layers 270 that is formed in its bottommost, and this structural support layers 270 plays the effect of the supporting layer of LED.This structural support layers 270 can by Si substrate, GaAs substrate or metal level forms.
On structural support layers 270, form adhesive linkage 260 and reflecting electrode 250 successively.Preferably, reflecting electrode 250 is to be made of the metal with high reflectance, can be used as electrode and reflector like this.
On reflecting electrode 250, be formed with successively: p-type GaN based semiconductor 240, the active layer 230 and the n-type GaN based semiconductor 220 that constitute by GaN/InGaN layer with multi-quantum pit structure.
On n-type GaN based semiconductor 220, form n-electrode 210.Between n-type GaN based semiconductor 220 and n-electrode 210, can form the transparency electrode (not shown) in addition and be used for strengthening the electric current diffusion effect.
In traditional vertical GaN base LED 200, because reflecting electrode 250 is formed in the whole lip-deep of p-type GaN based semiconductor 240, therefore the light that is produced by active layer 230 passes through reflecting electrode 250 reflections so that escape to the external world.Yet, when reflecting electrode 250 is formed on the whole surface of p-type GaN based semiconductor 240, when LED works, produce polarity effect.Therefore, produce piezoelectric effect, can reduce the reliability of LED like this.
Summary of the invention
The invention has the advantages that provides a kind of vertical GaN base LED and manufacture method thereof, this method makes cutting or the scribing process that helps to be used to cut apart LED, and prevent that the overall structure that comprises structural support layers from bending or short circuit, thereby strengthened the reliability of LED.
Another advantage of the present invention has been to provide a kind of vertical GaN base LED and manufacture method thereof, and this vertical GaN base LED can be by reducing the reliability that the piezoelectric effect that is produced by the reflecting electrode that is formed on the p-type GaN based semiconductor strengthens LED.
The others of total inventive concept of the present invention and advantage will be in description subsequently partly explanation, and partial content to describe from it be conspicuous, perhaps can know by the enforcement of total inventive concept.
According to an aspect of the present invention, GaN base LED comprises: the n-electrode, be formed on the ray structure below the n-electrode; Be formed on the diaphragm on the ray structure outer surface; Be formed on the p-electrode below the ray structure that is formed with diaphragm; Be formed on the ray structure and the whole lip-deep metal seed layer of p-electrode; And be formed on conductive substrates below the metal seed layer.
Preferably, ray structure comprises: n-type GaN based semiconductor, active layer (active layer) and p-type GaN based semiconductor.
Preferably, n-type GaN based semiconductor has the surface irregularity (blemish, surface irregularities) that is formed on its upper surface.GaN base LED further comprises the current barrier layer in the lower surface middle body that is formed on ray structure.
Preferably, conductive substrates comprises first and second coating.More specifically, first coating has the double-layer structure that stacks gradually Ni and Au, and second coating has the three-decker that stacks gradually Au, Ni and Au.
According to another aspect of the present invention, vertical GaN base semiconductor LED comprises: conductive substrates; Be formed on the metal seed layer on the conductive substrates; Be formed on the current barrier layer in the middle body of metal seed layer; Be formed on the metal seed layer and first electrode on any side of current barrier layer; Be formed on the diaphragm on the outer surface of the ray structure that is formed at first electrode; And be formed on second electrode on the ray structure.
Preferably, ray structure comprises: p-type GaN based semiconductor, active layer and n-type GaN based semiconductor, and n-type GaN based semiconductor has the surface irregularity (blemish) that is formed on its upper surface.First electrode is the p-electrode, and second electrode is the n-electrode.
Preferably, conductive substrates comprises first and second coating.First coating has the double-layer structure that stacks gradually Ni and Au, and second coating has the three-decker that stacks gradually Au, Ni and Au.
According to another aspect of the present invention, the manufacture method of vertical GaN base LED comprises: form ray structure, stacked gradually n-type GaN based semiconductor, active layer and p-type GaN based semiconductor on substrate; The etching ray structure, thus ray structure is divided into the LED unit; Form the p-electrode on the ray structure after each is cut apart; Fill non-conducting material between the ray structure after cutting apart; On the structure that is obtained, form metal seed layer; On the metal seed layer the zone between ray structure, form first coating; On the metal seed layer between first coating, form second coating; Separate substrate from ray structure; Removal is because of the non-conducting material between the exposed ray structure of separate substrate; On n-type GaN based semiconductor, form the n-electrode; And remove the metal seed layer be between the ray structure and the part of second coating.
Preferably, non-conducting material is a photoresist.
Preferably, this method further comprises: before the p-electrode forms, along the upper surface formation insulating barrier of the substrate that comprises divided ray structure; And etching isolation layer optionally, thereby on the middle body of the upper surface of ray structure, form current barrier layer, simultaneously, form diaphragm on arbitrary in the both side surface of ray structure.
Preferably, this method also comprises: after ray structure forms, remove following (by down) part of substrate with predetermined thickness by grinding and polishing.
Preferably, the formation of first coating comprises: form photoresist on the metal seed layer between the ray structure; On the metal seed layer between the photoresist, form first coating; And removal photoresist.
Preferably, the removal of the part metals Seed Layer and second coating is undertaken by cutting, scribing and Wet-type etching.
Preferably, this method also comprises: before the n-electrode forms, form surface irregularity on n-type GaN based semiconductor; And form contact hole by a part of removing n-type GaN based semiconductor, wherein, the n-electrode is formed at this with preset thickness.
Preferably, first coating has the double-layer structure that stacks gradually Ni and Au.
Preferably, second coating has the three-decker that stacks gradually Au, Ni and Au.
Description of drawings
By the description of embodiment being carried out below in conjunction with following accompanying drawing, these of total inventive concept of the present invention and/or others and advantage become apparent, and are easier to understand:
Figure 1A to 1F is the profile that the manufacture method of traditional vertical GaN base LED is shown successively.
Fig. 2 is the profile of the traditional vertical GaN based LED construction of explanation another kind.
Fig. 3 is the profile that the vertical GaN based LED construction of first embodiment according to the present invention is shown.
Fig. 4 A to 4M is the profile that the vertical GaN base LED manufacture method of first embodiment according to the present invention is shown successively.
Fig. 5 shows the profile of the vertical GaN base LED of second embodiment according to the present invention.
Fig. 6 to 8 is the plane graphs that illustrate according to the shape of reflecting electrode of the present invention.
Fig. 9 A to 9E is the profile that the vertical GaN base LED manufacture method of second embodiment according to the present invention is shown successively.
Figure 10 to 12 is profiles that the vertical GaN based LED construction of the 3rd embodiment according to the present invention is shown.
Figure 13 A to 13E is the profile that the vertical GaN base LED manufacture method of the 3rd embodiment according to the present invention is shown successively.
Figure 14 is the profile that illustrates according to the vertical GaN based LED construction of the 4th embodiment.
Figure 15 A to 15E is the profile that the vertical GaN base LED manufacture method of the 4th embodiment according to the present invention is shown successively.
Embodiment
Below will be specifically with reference to the embodiment of total inventive concept of the present invention, embodiment shown in the drawings wherein, is represented components identical with identical drawing reference numeral in the text.Below by describing embodiment with reference to the accompanying drawings to explain total inventive concept of the present invention.In the accompanying drawings, Ceng thickness and zone are exaggerated so that can clearly express.
Hereinafter, with reference to the accompanying drawings the specific embodiment of the present invention is described in detail.
First embodiment
With reference to Fig. 3 and Fig. 4 A to 4M, vertical GaN base LED and manufacture method thereof according to first embodiment are described in detail.
Fig. 3 is the profile that the vertical GaN based LED construction of first embodiment according to the present invention is shown.Fig. 4 A to 4M is the profile that the vertical GaN base LED manufacture method of first embodiment according to the present invention is shown successively.
Shown in Fig. 4 A, on substrate 310, form ray structure 320, ray structure 320 is made of the GaN based semiconductor.In ray structure 320, stack gradually: n-type GaN based semiconductor 321, the active layer (active layer) 322 and the p-type GaN based semiconductor 323 that constitute by GaN/InGaN layer with multi-quantum pit structure.
Preferably, substrate 310 is formed by the transparent material that comprises sapphire.Except that sapphire, substrate 310 also may be formed by ZnO (zinc oxide), GaN (gallium nitride), SiC (carborundum) or AlN (aluminium nitride).
N-type and p-type GaN based semiconductor 321 and 323 and active layer 322 can be Al by having the structural formula of composition
xIn
yGa
(1-x-y)The semi-conducting material of N (wherein, 0≤x≤1,0≤y≤1, and 0≤x+y≤1) forms.In addition, n-type and p-type GaN based semiconductor 321 and 323 and active layer 322 can form by well-known the processing such as MOCVD (Organometallic chemical vapor deposition) or MBE nitride deposition such as (molecular beam epitaxies).
As mentioned above, the Performance And Reliability of 322 pairs of GaN bases of active layer LED has very big influence.Therefore, in the whole manufacturing process of GaN base LED, should avoid active layer 322 that defectives such as conductor infiltration take place.
Secondly, shown in Fig. 4 B, with preset thickness the lower part of substrate 310 is removed by grinding and polishing.Grinding and polishing can be omitted, and the enforcement of this processing makes the LLO (laser lift-off) of Sapphire Substrate handle easier carrying out.
Then, shown in Fig. 4 C, ray structure 320 is etched to be divided into the LED unit.Because ray structure 320 is etched in advance so that cut apart, when handling, follow-up LLO can prevent to be damaged by laser so constitute the GaN based semiconductor of ray structure 320.
Subsequently, the upper surface along the substrate 310 that comprises each ray structure 320 after cutting apart forms the insulating barrier (not shown).Then, after insulating barrier is selectively etched, on the middle body of the upper surface of ray structure 320, form current barrier layer 330, simultaneously, on the surface of any side of ray structure 320, form diaphragm 340, shown in Fig. 4 D.
Secondly, shown in Fig. 4 E, on the ray structure 320 that does not form current barrier layer 330, form p-electrode 350.Preferably, p-electrode 350 is by forming based on Ag or based on the material of Al, so that play electrode and reflectance coating.
As mentioned above, p-electrode 350 is formed on the place that does not have current barrier layer 330 to form.Although it is not shown,, p-electrode 350 can be formed on the ray structure 320, so that cover current barrier layer 330.
Secondly, shown in Fig. 4 F, the first photoresist PR1 is filled between each ray structure of cutting apart 320 as non-conducting material.
In this embodiment, the first photoresist PR1 stops the atom that constitutes metal seed layer 360 to be penetrated in the active layer 322, thereby has prevented junction leakage and short circuit.Metal seed layer 360 forms in processing afterwards.
Then, shown in Fig. 4 G, on the structure that is obtained, form metal seed layer 360.(spray) plating of the structural support layers 370 that metal seed layer 360 will be described below provides nucleus in handling.Such metal seed layer 360 can form by sputtering method or vacuum moulding machine (deposit) method.
Subsequently, shown in Fig. 4 H, on the metal seed layer between the ray structure 320 360, form the second photoresist PR2, and on the metal seed layer 360 between the second photoresist PR2, form the first coating 370a by electroplating processes.Preferably, the first coating 370a is formed with the double-layer structure that stacks gradually Ni and Au.Between them, Au prevents the surperficial oxidized of Ni, and the bonding force of enhancing and the following second coating 370b that will describe.
Then, shown in Fig. 4 I, remove the second photoresist PR2, and on the metal seed layer 360 between the first coating 370a and the 370a, form the second coating 370b, thereby form the structural support layers 370 that constitutes by the first coating 370a and the second coating 370b.
Preferably, the second coating 370b is formed with the three-decker that stacks gradually Au, Ni and Au.Between them, nethermost Au strengthens the bonding force with the first coating 370a.And uppermost Au can prevent the surperficial oxidized of Ni, and the bonding force when strengthening mould adhesion process in packaging process subsequently.
In correlation technique, the overall structure that comprises structural support layers 170 is owing to bending in that thermal coefficient of expansion is different between ray structure 120 and the structural support layers 170 that is formed into the zone between each ray structure 120.Yet according to this embodiment, the first photoresist PR1 replaces structural support layers and is formed between each ray structure of cutting apart 320.In addition, form with preset thickness on ray structure 320 according to 370 of structural support layers of the present invention.Therefore, can prevent that the overall structure that comprises structural support layers 370 from bending, can overcome the difficulty of enforcement like this with reprocessing.
Structural support layers 370 is as the electrode of supporting layer and final LED.In addition, structural support layers 370 is by having the metal of excellent thermal conductivity to constitute like this such as Ni or Au.Thereby the heat that is produced by LED can be easy to be discharged into the external world.Therefore, although be applied with big electric current on the LED, heat also can be released effectively, can avoid the performance of LED to reduce (degeneration) like this.
Secondly, shown in Fig. 4 J, substrate 310 is handled by LLO and is separated with ray structure 320.
Shown in Fig. 4 K, remove the part of the first photoresist PR1 and the diaphragm between ray structure 320 340 continuously, this part of diaphragm 340 is exposed by separate substrate 310.Then, on the surface of n-type GaN based semiconductor 321, form surface irregularity 321a and strengthen light ejection efficiency (light extraction efficiency, light extractionefficiency).
Then, shown in Fig. 4 L, the part that is used to form n-electrode 380 of n-type GaN based semiconductor 321 is removed with predetermined thickness, thereby formed contact hole h.Then, on this contact hole h, form n-electrode 380.
Secondly, shown in Fig. 4 M, will remove by cutting process, so separately each ray structure 320 in the part of the metal seed layer between the ray structure 320 360 and the part of the second coating 370b.Then, form a plurality of GaN base LED 300.At this moment, the separation of GaN base LED 300 except above-mentioned cutting process, also can be finished by laser scribing processing or wet etch process.
In correlation technique, the final separation of GaN base LED 100 is to implement by the cutting of thicker relatively structural support layers 170.Yet in this embodiment, the final separation of GaN base LED 300 is by the cutting of metal seed layer 360 and the second coating 370b thinner than traditional structural support layers 170 thickness is implemented.Therefore, ray structure 320 can prevent fragmentation or damage in cutting process.
As shown in Figure 3, the vertical GaN base LED according to the said process manufacturing comprises: conductive substrates 370, be formed on the metal seed layer 360 on the conductive substrates 370 and be formed on ray structure 320 on the metal seed layer 360.
In addition, on the upper surface of n-type GaN based semiconductor 321, be formed with surface irregularity 321a.
Second embodiment
＜vertical GaN base LED 〉
With reference to Fig. 5 to Fig. 8, the vertical GaN base LED according to second embodiment of the present invention is described in detail.
Fig. 5 is the profile that illustrates according to the vertical GaN base LED of second embodiment of the present invention.Fig. 6 to Fig. 8 is the plane graph that illustrates according to reflecting electrode shape of the present invention.
As shown in Figure 5, the vertical GaN base LED 400 according to second embodiment partly has n-electrode 410 topmost at it.
Below n-electrode 410, form n-type GaN based semiconductor 420.More specifically, n-type GaN based semiconductor 420 can form by the GaN layer or by the GaN/AlGaN layer that is doped with n-type impurity.
In order to strengthen the electric current diffusion effect, between n-electrode 410 and n-type GaN based semiconductor 420, further form the transparency electrode (not shown).
Under n-type GaN based semiconductor 420, stacked gradually active layer 430 and p-type GaN based semiconductor 440, thereby formed ray structure.The active layer 430 of ray structure can form has the multi-quantum pit structure that is made of the InGaN/GaN layer.P-type GaN based semiconductor 440 can be made of GaN layer or the GaN/AlGaN layer that is doped with p-type impurity, and is similar with n-type GaN based semiconductor 420.
Below the p-of ray structure type GaN based semiconductor 440, be formed with a plurality of reflecting electrodes 450, so that its predetermined at interval each other distance.In the vertical GaN of aforesaid tradition base LED (with reference to Fig. 2), reflector 250 is formed on the whole surface of p-type GaN based semiconductor 440.But, in vertical GaN base LED, below p-type GaN based semiconductor 440, be formed with a plurality of reflecting electrodes 450, so that its predetermined at interval each other distance according to this embodiment.Therefore, when LED worked, the polarity effect that produces by reflecting electrode 450 was localized, and can reduce piezoelectric effect like this.
Preferably, reflecting electrode 450 is formed by the single or multiple lift structure, and this structure is that the alloy of at least a element constitutes by being selected from one or more elements in the group that Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W constitute and comprising wherein.
Reflecting electrode 450 can be formed in as shown in Figure 6 the circle, or is formed in as shown in Figure 7 the ellipse, or is formed in as shown in Figure 8 the square.In addition, the shape of reflecting electrode 450 is not limited to above-mentioned shape, and under the situation that does not deviate from scope of the present invention, can be deformed into equilateral polygon, asymmetric polygon, or circle, oval, equilateral polygon and asymmetric polygonal combination such as equilateral pentagon or equilateral hexagon etc.
Preferably, reflecting electrode 450 forms the width with 0.5 to 500 μ m.When the width of reflecting electrode 450 during less than 0.5 μ m, the size of reflecting electrode 450 extremely reduces, and there is limitation in effect as reflecting electrode like this.When the width of reflecting electrode 450 during, be difficult to obtain the reduction of piezoelectric effect greater than 500 μ m.Therefore, reflecting electrode 450 preferably has the width of above-mentioned scope.
Below comprising the p-type GaN based semiconductor 440 of reflecting electrode 450, form barrier layer 455.When reflecting electrode 450 formed ohmic contact with p type GaN based semiconductor 440, barrier layer 455 formed (Shottky) contact performance that has Schottky, therefore also as current barrier layer.Simultaneously, when reflecting electrode 450 is when being formed by Ag or similar substance, then barrier layer 455 is used for stoping the Ag diffusion that constitutes reflecting electrode 450.
Preferably, barrier layer 455 can be formed by the metal of single or multiple lift structure, and this metal is to constitute by being selected from one or more elements in the group that Al, Ti, Zr, Hf, Ta, Cr, In, Sn, Pt, Au constitute and comprising one of them alloy of planting element.In addition,, also can use TCO (transparent conductive oxide), as ITO (tin indium oxide), IZO (indium zinc oxide), IO (indium oxide), ZnO or SnO except above-mentioned metal
2
Below barrier layer 455, be formed with adhesive linkage 460.
Below adhesive linkage 460, be formed with structural support layers 470, so that play the effect of the electrode of supporting layer and LED.Consider the thermal stability of LED, structural support layers 470 is formed by Si substrate, Ge substrate, SiC substrate, GaAs substrate or metal level usually.
According to second embodiment, below p-type GaN based semiconductor 440, form a plurality of reflecting electrodes 450, so that its predetermined at interval each other distance.Therefore, the polarity effect that produces by reflecting electrode 450 when LED works is localized, and can reduce piezoelectric effect like this.Consequently, can strengthen the reliability of LED.
The manufacture method of vertical GaN base LED
Hereinafter, with reference to Fig. 9 A to 9E, the manufacture method of the vertical GaN base LED of second embodiment according to the present invention is described in detail.
Fig. 9 A to 9E is the profile that illustrates successively according to the manufacture method of the vertical GaN base LED of second embodiment of the present invention.
Shown in Fig. 9 A, on Sapphire Substrate 490, form n-type GaN based semiconductor 420, active layer 430, p-type GaN based semiconductor 440 successively, thereby form ray structure.As mentioned above, n-type GaN based semiconductor 420 can form by the GaN layer or by the GaN/AlGaN layer that is doped with n-type impurity, active layer 430 can form has the multi-quantum pit structure that is made of the GaN/AlGaN layer, and p-type GaN based semiconductor 440 can form by the GaN layer or by the GaN/AlGaN layer that is doped with p-type impurity.
Then, on the p-of ray structure type GaN based semiconductor 440, form a plurality of reflecting electrodes 450, so that its predetermined at interval each other distance.Preferably, reflecting electrode 450 is formed with the single or multiple lift structure, and this structure is to constitute by being selected from one or more elements in the group that Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W constitute and comprising one of them alloy of planting element.In addition, reflecting electrode 450 can form difformity, comprising: the combination of equilateral polygon, circle, asymmetric polygon, ellipse and these shapes.In addition, reflecting electrode 450 is preferably formed to having the width of 0.5 to 500 μ m.
In this embodiment, on p-type GaN based semiconductor 440, form a plurality of reflecting electrodes 450, make distance that it is predetermined at interval each other.Therefore, the polarity effect that is produced by reflecting electrode 450 when LED works is localized, thereby can reduce piezoelectric effect.
Shown in Fig. 9 B, comprising formation barrier layer 455 on the p-type GaN based semiconductor 440 of a plurality of reflecting electrodes 450.Preferably, form barrier layer 455 and make to have Schottky (Shottky) contact performance with p-type GaN based semiconductor 440.Therefore, barrier layer 455 can be formed by the metal with single or multiple lift structure, and this metal is to constitute by being selected from one or more elements in the group that Al, Ti, Zr, Hf, Ta, Cr, In, Sn, Pt, Au constitute and comprising one of them alloy of planting element.In addition,, also can use TCO (transparent conductive oxide), as ITO (tin indium oxide), IZO (indium zinc oxide), IO (indium oxide), ZnO and SnO except above-mentioned metal
2
Secondly, shown in Fig. 9 C, on barrier layer 455, form adhesive linkage 460 and structural support layers 470 successively.Consider the thermal stability of LED, structural support layers 470 is normally formed by Si substrate, Ge substrate, SiC substrate, GaAs substrate or metal level.
Then, shown in Fig. 9 D, Sapphire Substrate 490 is handled by LLO and is removed.
Secondly, shown in Fig. 9 E, n-electrode 410 is formed on the n-type GaN based semiconductor 420 of having removed Sapphire Substrate 490.In order to strengthen the electric current diffusion effect, before n-electrode 410 forms, on n-type GaN based semiconductor 420, further form the transparency electrode (not shown).
The 3rd embodiment
＜vertical GaN base LED 〉
Below, with reference to Figure 10 to Figure 12 the 3rd embodiment of the present invention is described.Wherein, the description of the omission and the second embodiment same section.
Figure 10 to Figure 12 is the profile that the vertical GaN based LED construction of the 3rd embodiment according to the present invention is shown.
As Figure 10 to shown in Figure 12, according to the vertical GaN base LED of the 3rd embodiment with have roughly the same structure according to the basic LED of the vertical GaN of second embodiment.Yet different with vertical GaN base LED according to second embodiment according to the vertical GaN base LED of the 3rd embodiment, its difference is that barrier layer 455 is to be formed by dielectric film, thereby the part of reflecting electrode forms and is exposed to outward.Dielectric film can by based on oxide or based on the material of nitride such as SiO
2, Al
2O
3, TiO
2, ZrO, HfO, SiN, AlN or similar substance form.
As shown in figure 10, the barrier layer 455 that is made of dielectric film can form along the surface (the part lower surface that does not comprise reflecting electrode 450) of reflecting electrode 450 and p-type GaN based semiconductor 440.In addition, as shown in figure 11, can form barrier layer 455 so that make the part lower surface of reflecting electrode 450 exposed outside, the gap between a plurality of reflecting electrodes 450 has been filled on barrier layer 455 simultaneously.In addition, as shown in figure 12, barrier layer 455 can be formed on the lower surface of the p-type GaN based semiconductor 440 between a plurality of reflecting electrodes 450, thereby the whole lower surface of reflecting electrode 450 and part side surface are exposed outside.In this case, barrier layer 455 forms and has the thickness thinner than reflecting electrode 450.
The barrier layer 455 that is made of dielectric film is not limited to as Figure 10 to structure shown in Figure 12.In the case without departing from the scope of the present invention, the structure on barrier layer 455 can change various form into.
That is to say that in the vertical GaN base LED according to the 3rd embodiment, barrier layer 455 is film formed by insulation, outside the part of reflecting electrode 450 forms and is exposed to, like this, reflecting electrode 450 is electrically connected with structural support layers 470.
The vertical GaN base LED according to the 3rd embodiment like this can obtain and second embodiment identical operations and the effect.
The manufacture method of＜vertical GaN base LED 〉
Below, with reference to Figure 13 A to Figure 13 E the manufacture method of the vertical GaN base LED of the 3rd embodiment according to the present invention is elaborated.
Figure 13 A to Figure 13 E is the profile that the manufacture method of the vertical GaN base LED of the 3rd embodiment according to the present invention is shown successively.
As shown in FIG. 13A, on Sapphire Substrate 490, form n-type GaN based semiconductor 420, active layer 430 and p-type GaN based semiconductor 440 successively, thereby form ray structure.
Then, on p-type GaN based semiconductor 440, form a plurality of reflecting electrodes 450, so that its predetermined at interval each other distance.
Then, shown in Figure 13 B, on interior p-type GaN based semiconductor 440, form barrier layer 455 comprising a plurality of reflecting electrodes 450.Barrier layer 455 is by SiO
2, Al
2O
3, TiO
2, ZrO, HfO, SiN, AlN or analog dielectric film form.At this moment, form barrier layer 455 so that the part of reflecting electrode 450 is exposed to the outside, reflecting electrode 450 can be electrically connected with the structural support layers 470 that forms subsequently like this.
Subsequently, shown in Figure 13 C, on the total that comprises barrier layer 455, form adhesive linkage 460 and structural support layers 470 successively.
Then, shown in Figure 13 D, adopt LLO to handle Sapphire Substrate 490 is removed.
Then, shown in Figure 13 E, on the n-type GaN based semiconductor 420 of removing Sapphire Substrate 490, form n-electrode 410.
The 4th embodiment
＜vertical GaN base LED 〉
Below, with reference to Figure 14 the 4th embodiment of the present invention is described.Wherein, the description of the omission and the second embodiment same section.
Figure 14 is the profile that illustrates according to the vertical GaN base LED of the 4th embodiment.
As shown in figure 14, according to the vertical GaN base LED of the 4th embodiment with have roughly the same structure according to the basic LED of the vertical GaN of second embodiment.Yet, according to the vertical GaN base LED of the 4th embodiment with different according to the basic LED of the vertical GaN of second embodiment, difference has been conversion and has been formed on the reflecting electrode 450 under the p-type GaN based semiconductor 440 and the formation position on barrier layer 455, and barrier layer 455 is film formed by insulation.Be used as barrier layer 455 dielectric film can by based on oxide or based on the material of nitride such as SiO
2, Al
2O
3, TiO
2, ZrO, HfO, SiN, AlN or similar substance form, and be similar with second embodiment.
In other words, in the vertical GaN base LED according to the 4th embodiment, barrier layer 455 is film formed by insulation.In addition, a plurality of barrier layers 455 at first are formed on p-type GaN based semiconductor 440 times, and a part that has replaced barrier layer 455 is formed reflecting electrode 450 is exposed to outer this structure, make its predetermined at interval each other distance like this.Then, form reflecting electrode 450 440 times at the p-type GaN based semiconductor that comprises barrier layer 455.
In the vertical GaN base LED as according to the 4th embodiment, part by being formed on a plurality of barrier layers 455 below the p-type GaN based semiconductor 440 with preset distance, making the reflecting electrode 450 that contact with p-type GaN based semiconductor 440 is the interval distance of being scheduled to each other.Therefore, can obtain and first embodiment identical operations and the effect.
The manufacture method of＜vertical GaN base LED 〉
Hereinafter, with reference to Figure 15 A to Figure 15 E the manufacture method of the vertical GaN base LED of the 4th embodiment according to the present invention is described in detail.
Figure 15 A to 15E is the profile that the manufacture method of the vertical GaN base LED of the 4th embodiment according to the present invention is shown successively.
Shown in Figure 15 A, form ray structure thereby on Sapphire Substrate 490, form n-type GaN based semiconductor 420, active layer 430 and p-type GaN based semiconductor 440 successively.
On p-type GaN based semiconductor 440, form a plurality of barrier layers 455, so that its predetermined at interval each other distance.Barrier layer 455 can be by the material based on oxide or nitride, as SiO
2, Al
2O
3, TiO
2, ZrO, HfO, SiN, AlN or its analog form.
Shown in Figure 15 B, on interior p-type GaN based semiconductor 440, form reflecting electrode 450 comprising barrier layer 455.
Shown in Figure 15 C, on reflecting electrode 450, form adhesive linkage 460 and structural support layers 470 successively.
Shown in Figure 15 D, handle by LLO, Sapphire Substrate 490 is removed.
Shown in Figure 15 E, on the n-type GaN based semiconductor 420 of removing Sapphire Substrate 490, form n-electrode 410.
According to the present invention, ray structure is divided into the LED unit, and between the ray structure of cutting apart, fills photoresist.Like this, can prevent that the atom that constitutes metal seed layer is penetrated in the active layer, thereby prevent junction leakage and short circuit.In addition, can prevent to comprise the overall structure bending of structural support layers, thereby processing is subsequently more easily implemented.
In addition, the final separation of LED is to finish thinner cutting apart of second coating by having to metal seed layer and than traditional structural support layers.Therefore, can prevent ray structure broken or damage in cutting process, this can easily implement the separating treatment of diode.
In addition, under p-type GaN based semiconductor, form a plurality of reflecting electrodes, so that its predetermined at interval each other distance.Compare during with formation reflecting electrode on the integral surface of p-type GaN based semiconductor, the polarity effect that produces by reflecting electrode 450 when LED works is localized, thereby has reduced piezoelectric effect.
Therefore, can strengthen the Performance And Reliability of vertical GaN base LED.
Although illustrated and described some embodiment of the total inventive concept of the present invention, but it should be appreciated by those skilled in the art, can change these embodiments under the condition of principle that does not deviate from the total inventive concept of the present invention and spirit, scope of the present invention is limited in the appended claim and equivalent thereof.
Claims (21)
1. vertical GaN base LED comprises:
The n-electrode;
N-type GaN based semiconductor is formed under the described n-electrode;
Active layer is formed under the described n-type GaN based semiconductor;
P-type GaN based semiconductor is formed under the described active layer;
A plurality of reflecting electrodes are formed under the described p-type GaN based semiconductor, so that make predetermined at interval each other distance, and described reflective electrodes reflects is from the incident light of described active layer generation;
The barrier layer is formed under the described p-type GaN based semiconductor that comprises described reflecting electrode;
Structural support layers is formed under the described barrier layer.
2. vertical GaN base LED according to claim 1, wherein,
Described reflecting electrode is formed with the single or multiple lift structure, and described structure is by being selected from one or more elements in the group that Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W constitute and comprising that the alloy of at least a described element constitutes.
3. vertical GaN base LED according to claim 1, wherein,
Described reflecting electrode forms the arbitrary shape that is selected from the group that is made of equilateral polygon, circle, asymmetric polygon, ellipse and combination thereof.
4. vertical GaN base LED according to claim 1, wherein,
Described reflecting electrode forms the width with 0.5 to 500 μ m.
5. vertical GaN base LED according to claim 1, wherein,
Described barrier layer is formed by metal or transparent conductive oxide.
6. vertical GaN base LED according to claim 5, wherein,
Described metal is formed with the single or multiple lift structure, and described structure is by being selected from one or more elements in the group that Al, Ti, Zr, Hf, Ta, Cr, In, Sn, Pt, Au constitute and comprising that the alloy of at least a described element constitutes.
7. vertical GaN base LED according to claim 5, wherein,
Described transparent conductive oxide is ITO, IZO, IO, ZnO and SnO
2In a kind of.
8. vertical GaN base LED according to claim 1, wherein,
The described barrier layer that formation is made of dielectric film so that the part of described reflecting electrode expose so that described reflecting electrode is electrically connected with described structural support layers.
9. vertical GaN base LED according to claim 8, wherein,
Described dielectric film is by SiO
2, Al
2O
3, TiO
2, any formation among ZrO, HfO, SiN and the AlN.
10. vertical GaN base LED according to claim 1 further comprises:
Between described barrier layer and described structural support layers, form adhesive linkage.
11. a vertical GaN base LED comprises:
The n-electrode;
N-type GaN based semiconductor is formed under the described n-electrode;
Active layer is formed under the described n-type GaN based semiconductor;
P-type GaN based semiconductor is formed under the described active layer;
A plurality of barrier layers are formed under the described p-type GaN based semiconductor, so that make predetermined at interval each other distance;
Reflecting electrode is formed under the described p-type GaN based semiconductor that comprises described barrier layer, and described reflective electrodes reflects is from the incident light of described active layer generation; And
Structural support layers is formed under the described reflecting electrode.
12. vertical GaN base LED according to claim 11, wherein,
Described barrier layer is formed by dielectric film.
13. the manufacture method of a vertical GaN base LED comprises:
On Sapphire Substrate, form n-type GaN based semiconductor, active layer, p-type GaN based semiconductor;
On described p-type GaN based semiconductor, form a plurality of reflecting electrodes of reflection, the distance that described a plurality of reflecting electrodes are predetermined at interval each other from the incident light of described active layer generation;
Form the barrier layer comprising on the described p-type GaN based semiconductor of described reflecting electrode;
On described barrier layer, form structural support layers;
Remove described Sapphire Substrate by laser lift-off process; And
On the described n-type GaN based semiconductor of removing described Sapphire Substrate, form the n-electrode.
14. method according to claim 13, wherein,
Described reflecting electrode is formed with the single or multiple lift structure, and described structure is by being selected from one or more elements in the group that Pd, Ni, Au, Ag, Cu, Pt, Co, Rh, Ir, Ru, Mo, W constitute and comprising that the alloy of at least a described element constitutes.
15. method according to claim 13, wherein,
Described reflecting electrode forms the arbitrary shape that is selected from the group that is made of equilateral polygon, circle, asymmetric polygon, ellipse and combination thereof.
16. method according to claim 13, wherein,
Described reflecting electrode forms the width with 0.5 to 500 μ m.
17. method according to claim 13, wherein,
Described barrier layer is formed by metal or transparent conductive oxide.
18. method according to claim 13, wherein,
The described barrier layer that formation is made of dielectric film partly exposes described reflecting electrode, so that described reflecting electrode is electrically connected with described structural support layers.
19. method according to claim 13 further comprises,
Before described structural support layers forms, on be formed with the overall structure on described barrier layer, form adhesive linkage.
20. the manufacture method of a vertical GaN base LED comprises:
On Sapphire Substrate, form n-type GaN based semiconductor, active layer, p-type GaN based semiconductor successively;
On described p-type GaN based semiconductor, form a plurality of barrier layers, the distance that described a plurality of barrier layers are predetermined at interval each other;
At the reflection of incident light electrode that comprises that the formation reflection produces from described active layer on the described p-type GaN based semiconductor on described barrier layer;
On described reflecting electrode, form structural support layers;
Remove described Sapphire Substrate by laser lift-off process; And
On the described n-type GaN based semiconductor of removing described Sapphire Substrate, form the n-electrode.
21. method according to claim 20, wherein,
Described barrier layer is formed by dielectric film.
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| KR1020060079703 | 2006-08-23 | ||
| KR20060079703 | 2006-08-23 | ||
| KR10-2006-0079703 | 2006-08-23 | ||
| KR1020070017519A KR100856089B1 (en) | 2006-08-23 | 2007-02-21 | Vertically structured GaN type Light Emitting Diode device And Manufacturing Method thereof |
| KR10-2007-0017519 | 2007-02-21 | ||
| KR1020070017519 | 2007-02-21 |
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| CN 200710097453 Active CN100536184C (en) | 2006-08-23 | 2007-04-29 | Vertical gallium nitride-based light emitting diode and preparation method thereof |
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| KR100856089B1 (en) | 2008-09-02 |
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| KR20080018084A (en) | 2008-02-27 |
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