CN101439983A - Method for manufacturing ceramic / metal composite structure - Google Patents
Method for manufacturing ceramic / metal composite structure Download PDFInfo
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- CN101439983A CN101439983A CNA2007101667811A CN200710166781A CN101439983A CN 101439983 A CN101439983 A CN 101439983A CN A2007101667811 A CNA2007101667811 A CN A2007101667811A CN 200710166781 A CN200710166781 A CN 200710166781A CN 101439983 A CN101439983 A CN 101439983A
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Abstract
The invention discloses a method for manufacturing a ceramic/metal composite structure. The manufacturing method comprises the following steps: carrying out multistage preoxidation treatment to a copper sheet; placing the copper sheet on a ceramic substrate; and heating the copper and the ceramic substrate to a combination temperature and carrying out combination treatment.
Description
Technical field
The present invention relates to a kind of manufacture method of ceramic/metal composite structure, relate in particular to a kind of utilize alumina layer and copper layer in conjunction with formed composite structure and manufacture method thereof.
Background technology
Electronic component all can produce heat under electronics mobile situation, and the generation of heat can promote resistance, hinders flowing of electronics, significantly influences the function of electronic component then.Under the present situation that the electronic component manufacturing technology significantly promotes, the live width in the electronic component is more and more littler, and line density is but more and more higher, thereby makes the heat that electronic component produced also increase fast.(CentralProcessing Unit CPU) is example, and Intel Company's only need arrange in pairs or groups encapsulation of heat radiation power 16W of the Pentium of version the earliest gets final product with the central processing unit of computer.But, the thermal value of the central processing unit of being produced in 2004 has reached 84W, and the thermal value of the central processing unit of being produced in 2006 has reached 98W more, if heat can not be pulled away fast, then the temperature of the central processing unit of computer will increase fast, and the central processing unit of computer can not be run well.Therefore, whether the substrate that contacts with the central processing unit of computer has heat-sinking capability fast, is the key factor that can leading computer run well really.
General (PCC) power as solid-state relay, also is the central processing unit that is similar to computer, produces high heat in operation.Therefore, (PCC) power also needs to utilize the substrate that is in contact with it that heat is left fast, can run well.
(Light Emitting Diode LED) is example, and versicolor photodiode had been developed in recent years successively, and is wherein important with succeeding in developing of white light emitting diode again with photodiode again.This is that the street lamp power consumption of this kind light source lacks 75% than mercuryvapour lamp, lacks 49% than high-pressure mercury lamp, so have the advantage of low power consuming, is an important development of save energy because white light emitting diode can be used as the light source of lighting.Yet, if the head lamp with daily life and vehicle is an example, these are used and all must use the white light emitting diode of power greater than 3W, this powerful white light emitting diode also can be emitted high heat, but the greatest problem of LED illumination is not Nai Gaore of LED, in general temperature can not be above 90 ℃, if surpass this temperature, then brightness will descend fast, so the quick heat radiating ability of the cooling mechanism that contacts with LED is the ultimate challenge that can photodiode become lighting source, this exploitation that heat-radiating substrate also has been described has very important key position to the application of photodiode in the illumination aspect.
For taking into account the compact design requirements of 3C electronic product now simultaneously, the substrate that contacts with central processing unit, (PCC) power or the light-emitting diode component of above these computers must meet following four basic demands simultaneously:
1. the requirement of heat radiation aspect: this material must have high heat-conduction coefficient, to reach the requirement of quick heat radiating.
2. the requirement of insulation aspect: for avoiding the short circuit of high power electronic part, this material must have high resistivity.
3. the requirement of thin layerization: after satisfying above two basic demands, the thickness of this substrate also should be got over Bao Yuehao.
4. the long-time reliability of using: this be because of the high power electronic part after encapsulation, the high power electronic part can be counted on-off (on-off) circulation with ten thousand times, and the substrate that contact with the high power electronic part moment heating and cooling are tens thousand of inferior thereupon.Reliability after the long-time use of electronic component is epochmaking requirement, and this has absolute relation with pottery and melts combine intensity.
Aspect the cooling mechanism of electronic component, used mechanisms such as radiating fin and heat pipe in a large number at present, be aided with fan again, in the hope of the heat that high-power electronic component produced being taken away fast.But the thickness of these cooling mechanisms is all bigger, thereby has hindered the compact design requirements of 3C electronic product.
Through comprehensive material search and assessment, the requirement and the optimal selection under the cost consideration that can meet above first heat radiation are metallic substance, are example with copper, and the heat-conduction coefficient of copper can reach 380W/mK.The material that can meet above second insulating requirement selection is then a lot, and most organic materials or stupaliths all can meet this requirement.For taking into account the demand of heat radiation, and considering the demand of long-time reliability, is preferable selection with stupalith.Can provide high heat conduction and insulating material that aluminum oxide and aluminium nitride are arranged in stupalith, the heat-conduction coefficient of aluminum oxide can reach 20-38W/mK, and the heat-conduction coefficient of aluminium nitride more can reach 40-200W/mK.Why the heat-conduction coefficient of pottery has bigger scope, is that the heat-conduction coefficient because of pottery is subjected to the purity and the sinter additives of pottery to influence very big.Moreover the specific resistance of aluminum oxide and aluminium nitride is all up to 10
10More than the Ω m, therefore two potteries all have splendid electrical insulating property.Again, aluminum oxide and aluminium nitride also have low-k (Dielectric constant) and high dielectric strength advantages such as (Dielectric strength), so be commonly used in the substrate aspect.
But because of aluminum oxide is the high melting solid (fusing point〉2000 ℃) of covalent linkage and ionic linkage coexistence, copper atom is then with the metallic bond combination, and fusing point has only 1083 ℃, aluminum oxide and copper bond is one together has challenging field.In the prior art, aluminum oxide and copper bond can be had two kinds of methods together, a kind of method is solid-state bond method (Solid state bonding), and another kind of method then is liquid bond method (Liquid phase bonding).The treatment temp of these two kinds of methods is all more than 1000 ℃.
Through research for a long time, we find that the boundary strength between aluminum oxide and the copper must very highly just have using value with alumina wafer and copper sheet bond substrate together.This be because of aluminum oxide different with the bond of copper, and the thermal expansivity (17 * 10 of copper
-6K
-1) be the thermal expansivity (8 * 10 of aluminum oxide
-6K
-1) twice.According to the formula (Selsing, J., J.Am.Ceram.Soc., 44,419,1961) that Selsing derived, as follows:
In following formula, Δ α is the difference of the thermal expansivity of aluminum oxide and copper, and Δ T is the temperature of manufacturing process or use and the difference of room temperature, and v is Poisson's ratio (Poisson ' s ratio), and E is an elastic constant.Because of with alumina wafer and copper sheet bond temperature together more than 1000 ℃, so the difference because of thermal expansivity engages the caused thermal stresses in (Joining) back between alumina wafer and the copper sheet at high temperature, estimation can reach more than hundreds of MPa.This thermal stresses is very big, alumina wafer and copper sheet bond intensity (bonding strength) there is very big influence, and after the electronic part package of participant heating, after the electronic component number is with ten thousand times on-off circulation, if alumina wafer and copper sheet bond intensity (bonding strength) are not high enough, can produce layering between alumina wafer and the copper sheet, the dissipation of heat ability will decline to a great extent, and this reliability to the long-time use of high power electronic part will produce the influence that can't remedy.
Therefore, how to provide a kind of ceramic/metal composite structure with high bond intensity, real is problem demanding prompt solution.
Summary of the invention
For addressing the above problem, the manufacture method that the purpose of this invention is to provide a kind of ceramic/metal composite structure, by the knot of the strong bond between pottery and the metallic substance is provided, be implemented under slimming and the long reliability, for electronic package provides the good heat radiation and the purpose of insulation function.
For achieving the above object, the invention provides a kind of manufacture method of ceramic/metal composite structure, comprise following steps:
Copper sheet is carried out multistage pre-oxidation treatment;
Described copper sheet is placed on the ceramic substrate;
Heat described copper sheet and described ceramic substrate to a junction temperature and carry out joining process.
According to the solution of the present invention, described multistage pre-oxidation treatment can comprise the pre-oxidation treatment of fs and the pre-oxidation treatment of subordinate phase; According to actual needs, this multistage pre-oxidation treatment can also comprise the pre-oxidation treatment of phase III.
When carrying out multistage pre-oxidation treatment, the temperature of the pre-oxidation treatment of fs and subordinate phase can be controlled between 50 ℃ to 700 ℃, and controls the suitable treatment time; Particularly, the time of pre-oxidation treatment can be controlled between 1 to 600 minute; Pre-oxidation treatment can be carried out in atmospheric atmosphere, preferably, adopt oxygen partial pressure in the atmosphere 0.01 to 1.1 * 10
5Between the Pa.
Oxygen partial pressure can be inequality in the temperature of each stage pre-oxidation treatment, time or the atmosphere that adopted, for example, the ratio of the kelvin rating of the fusing point of the kelvin rating of the top temperature of the pre-oxidation treatment of fs and subordinate phase and copper can be less than or equal to 0.75.The surplus temperature of the described copper sheet after the pre-oxidation treatment that the starting temperature of the pre-oxidation treatment of subordinate phase can be controlled at the fs is finished.
According to the solution of the present invention, after the multistage pre-oxidation treatment is finished, heat described copper sheet and described ceramic substrate to and carry out the junction temperature that adopted when handling between the fusing point of eutectic point between copper and the cupric oxide and copper, perhaps between the eutectic point between copper and the cupric oxide and 1000 ℃ in conjunction with temperature.
Description of drawings
Fig. 1 shows the diagrammatic cross-section according to the ceramic/metal composite structure of preferred embodiment of the present invention.
Fig. 2 shows the schema according to the manufacture method of the ceramic/metal composite structure of preferred embodiment of the present invention.
Fig. 3 shows the test result figure of aluminum oxide substrate.
Fig. 4 and Fig. 5 show the test result figure of aluminum oxide substrate and process single phase preoxidation copper sheet bonded composite structure.
Fig. 6, Fig. 7 and Fig. 8 show the test result figure of aluminum oxide substrate and process multistage preoxidation copper sheet bonded composite structure.
The primary clustering nomenclature:
S11-S13 treatment step 13 ceramic substrates 15 copper sheets
Embodiment
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Shown in Fig. 1 and 2, the manufacture method of the ceramic/metal composite structure of present embodiment comprises following steps:
At first, in step S11, copper sheet 15 is carried out multistage pre-oxidation treatment.Multistage pre-oxidation treatment can comprise the pre-oxidation treatment of fs and the pre-oxidation treatment of subordinate phase, and this multistage pre-oxidation treatment can also comprise the pre-oxidation treatment of phase III.The actual treatment of being done according to the present invention, the pre-oxidation treatment in first, second and third stage are in different temperature, different time or have in the atmosphere of different partial and finish.
The temperature of the pre-oxidation treatment of first, second and/or phase III can be controlled between 50 ℃ to 700 ℃.Particularly, the ratio of the kelvin rating (K) of the fusing point of the kelvin rating of the top temperature of the pre-oxidation treatment in first and second stage and copper (1083 ℃) is less than or equal to 0.75.The time of the pre-oxidation treatment of first, second and/or phase III can be controlled between 1 to 600 minute.Oxygen partial pressure in the atmosphere of the pre-oxidation treatment of first, second and/or phase III is 0.01 to 1.1 * 10
5Between the Pa.The surplus temperature of the copper sheet 15 after the pre-oxidation treatment that the starting temperature of the pre-oxidation treatment of subordinate phase can equal the fs is finished.The surplus temperature of the copper sheet 15 after the pre-oxidation treatment that the starting temperature of the pre-oxidation treatment of phase III also can equal subordinate phase is finished.So-called surplus temperature is meant the temperature when the pre-oxidation treatment copper sheet afterwards that passes through previous stage is moved out of baker (for example continuous chain bar oven) fast.At this moment, copper sheet contacts with air, can carry out the oxidation of next stage again.Utilize surplus temperature to carry out the method for preoxidation through experiment showed,, still can obtain the desired effect of the present invention.
Then, in step S12, copper sheet 15 is placed on the ceramic substrate 13.In embodiments of the invention, the material of ceramic substrate 13 can be selected from one or more the combination in aluminum oxide, silicon oxide, aluminium nitride, silicon nitride, silicon carbide, glass and the glass-ceramic.
Then, in step S13, heating copper sheet 15 and ceramic substrate 13 to one junction temperatures are to carry out joining process.Junction temperature is between the fusing point (1083 ℃) of the eutectic point (1066 ℃) of copper and cupric oxide and copper.Perhaps, junction temperature is between the eutectic point of copper and cupric oxide and 1000 ℃.
Below will effect of the present invention be described to test example.
Test example 1
With size is the aluminum oxide substrate (aluminum oxide purity is 96%) of 32 * 23 * 0.5mm, with universal testing machine (Universal Testing Machine, MTS-810, American MTS company), the coping behavior of the anti-folding mode of bikini (3-point bending method) test aluminum oxide substrate under meeting with stresses, 2 width that meet with stresses wherein are 22.5mm, and the stress rate of application is 0.002mm/ second, and the gained stress-strain curve as shown in Figure 3.As shown in Figure 3, aluminum oxide substrate is at the stress that bears 100 newton (Newton), and after producing minimum displacement, promptly moment breaks, and is a typical brittle rupture (brittle rupture).
Test example 2
Will with the test example 1 in employed the same aluminum oxide substrate, after the acetone cleaning, with thickness be 0.3mm, and through the copper sheet of 1000 ℃ of low oxygen partial pressure preoxidation of 1 hour, in the pipe furnace that imposes temperature correction, impose the high temperature joining process under 1073 ℃ and flowing nitrogen atmosphere, the composite structure behind the joint imposes the bikini anti-folding test identical with testing example 1, and the gained stress-strain curve as shown in Figure 4.Aluminum oxide/copper compound structure is behind the stress that bears 150 newton, stress promptly descends fast, this composite structure is after test, aluminum oxide substrate breaks, aluminum oxide separates with the interface between the copper sheet is most of, only surplus part copper sheet still can be caught aluminum oxide substrate, promptly only has the part copper sheet still to keep combining with aluminum oxide substrate.
More than the bright aluminum oxide/copper compound structure of test illustration can bear the applied stress higher than aluminum oxide substrate, but if after imposing bigger stress, this kind aluminum oxide/copper compound structure can't continue to use.But, can effectively promote boundary strength (interface bond strength) with multistage mode pre-oxidation copper sheet.Now illustrated with following example.
Test example 3
With size is that the anaerobic copper sheet (commercially available) of 26 * 20 * 0.3mm is polished gently with No. 200 carborundum papers earlier, to remove surperficial original zone of oxidation, cleans to remove degrease with acetone again, is dried then.After this handled, the anaerobic copper sheet recovered original metalluster, used the nitrogen oxygen analyzer of infrared spectrum analysis method to analyze oxygen level in the described unoxidized copper sheet then, and analytical results shows that oxygen level is below 1wt%.
Then, this anaerobic copper sheet (commercially available) is placed the high quartz tube furnace, pass to nitrogen then, the oxygen level in the general nitrogen is according to the source of supply difference, oxygen level about 0.01ppm to the scope of dozens of ppm.The flow of this gas is per minute 30cc, is warming up to 1000 ℃ of insulations 10 hours then, reduces to room temperature again.Then, analyze the oxygen level in the copper sheet of described preoxidation with the nitrogen oxygen analyzer, analytical results shows that oxygen level still is below the 1wt%.This example is presented at formed cupric oxide and/or Red copper oxide in the preoxidation process, has the protection remaining copper not by fast oxidative ability.So after the time of preoxidation increased, oxygen level increased limited in the copper sheet.
Then, behind acetone cleaning aluminum oxide substrate, making aluminum oxide substrate and two thickness is 0.3mm and through the copper sheet of stage preoxidation (being aforementioned through preoxidation in 10 hours), imposing joint (Joining) under 1074 ℃ of nitrogen oxygen atmospheres handled 30 minutes, substrate behind the joint imposes the anti-folding test of bikini, and the gained stress-strain curve as shown in Figure 5.Aluminum oxide/copper compound structure bear 160 newton add strength after, stress is only reduced to surplus 50 newton rapidly, this substrate is after test, copper separates with the existing part in the interface between the aluminum oxide.Compared to test example 2, though this example shows that boundary strength between copper and the aluminum oxide can increase with preoxidation time and promote that copper and aluminum oxide are when bearing greatly stress, the residual boundary strength of substrate is not high.
Test example 4
The anaerobic copper sheet behind surface treatment and cleaning step, is carried out two stage pre-oxidation treatment, and the condition of preoxidation is in the high quartz pipe, passes to nitrogen, and gas flow is per minute 30cc, is warming up to 600 ℃ of insulations several minutes then, reduces to room temperature again.Then, carry out the pre-oxidation treatment of subordinate phase, be warming up to 200 ℃, insulation is several minutes in the air, reduces to room temperature again.Through the copper sheet of this two stages preoxidation, analyze the oxygen level in the copper sheet of described preoxidation with the nitrogen oxygen analyzer, analytical results shows that oxygen level is below 1wt%.With the surface of the copper sheet after this oxidation of emission scan formula electron microscope observation of field, observations shows that the copper sheet surface after the oxidation forms the oxide film of one deck densification, and the oxide film of this layer densification is to being extremely helpful with aluminum oxide and copper tight joint together.
Then, behind acetone cleaning aluminum oxide substrate, through in the stove of temperature correction, under 1059 ℃ of nitrogen oxygen atmospheres (this temperature is under 1066 ℃ of eutectic temperatures), aluminum oxide substrate and two thickness are 0.3mm and imposed joining process 10 minutes through the copper sheet of two stages preoxidation.Substrate after engaging is imposed the anti-folding test of bikini, and the gained stress-strain curve as shown in Figure 6.Aluminum oxide/copper compound structure can bear and test the bigger external force of example 3, and bear 180 newton add strength after, stress is reduced to 105 newton earlier, does not separate with copper sheet fully through observing this moment aluminum oxide.Copper sheet still tightly catch alumina wafer, so still can keep the integrity of this composite structure.When continuing to exert pressure, this composite structure still can bear more high pressure, and the interface of evidence alumina wafer and copper sheet does not separate.It should be noted that this composite structure can produce the distortion of 1.6mm, and the interface of composite structure is kept perfectly still.Through examining, the copper sheet of composite structure has produced viscous deformation, so under the complete situation in interface, still can produce a large amount of distortion.
In other experimentation, this case contriver passes through the scope of control oxygen partial pressure 0.01 to 1.1 * 10
5Between the Pa, can obtain good effect.In addition, junction temperature is controlled between the fusing point of the eutectic point of copper and cupric oxide and copper, perhaps with junction temperature between the eutectic point of copper and cupric oxide and 1000 ℃, can obtain good effect.
Test example 5
In this example, illustrate that copper sheet carries out two stage pre-oxidation treatment at low temperature earlier, even only use lower preoxidation temperature and short preoxidation time, still can obtain very high copper/aluminum oxide boundary strength.
The condition of preoxidation is similar to test example 4, and the fs is at 600 ℃, and first preoxidation number minute allows still the have a surplus copper sheet of temperature contact the preoxidation of carrying out subordinate phase with the stove outer air in the mode that shifts out stove fast again.Then, the copper sheet and the aluminum oxide substrate of preoxidation are bonded together, before the joint, after aluminum oxide substrate cleans with acetone earlier, again in the process stove of temperature correction, under 1060 ℃ of nitrogen oxygen atmospheres (this temperature is under 1066 ℃ of eutectic temperatures), with two thickness be 0.3mm and through the copper sheet joining process of two stages preoxidation 6 minutes.Composite structure after engaging is imposed the anti-folding test of bikini, and the gained stress-strain curve as shown in Figure 7.Aluminum oxide/copper compound structure bear 145 newton add strength after, stress is only reduced to 90 newton earlier, do not separate fully through observing this moment aluminum oxide with copper sheet, copper sheet still tightly catch alumina wafer, so can keep the integrity of this composite structure.And if continue to exert pressure, this composite structure can bear still more that high pressure can reach 195 newton, just descends slightly once more then.It should be noted that this composite structure can produce the distortion of 1mm, and the interface of composite structure is kept perfectly still.
In other experimentation, this case contriver passes through the scope of control oxygen partial pressure 0.01 to 1.1 * 10
5Between the Pa, can obtain good effect.In addition, junction temperature is controlled between the fusing point of the eutectic point of copper and cupric oxide and copper, perhaps with junction temperature between the eutectic point of copper and cupric oxide and 1000 ℃, can obtain good effect.
Test example 6
In this example, illustrate that copper sheet carries out two stage pre-oxidation treatment at low temperature earlier, and this two stage, also can be to carry out cryogenic preoxidation earlier, omit pyritous preoxidation again, the time of preoxidation is still very short, but still can obtain very high copper/aluminum oxide boundary strength.
The condition of preoxidation is similar to test example 4, the copper sheet of 70 * 20 * 0.3mm is first in air, at 250 ℃ of pre-oxidation treatment numbers that impose the fs minute, at 600 ℃ of preoxidation numbers minute, the aluminum oxide substrate with 80 * 32 * 0.5mm is bonded together subordinate phase then again.Before the joint, aluminum oxide substrate cleans with acetone earlier, again through in the stove of temperature correction, under 1061 ℃ the nitrogen oxygen atmosphere (this temperature is under 1083 ℃ of the fusing points of 1066 ℃ of eutectic temperatures and copper), with two through the copper sheet joining process of two stages preoxidation 10 minutes.
Downcut aluminum oxide/copper compound structure of 32 * 23 * 1.1mm then with diamond blade, impose the anti-folding test of aforesaid bikini again, unique difference is 0.05mm/second for the stress rate of application, and the gained stress-strain curve as shown in Figure 8.With the dissipation of heat substrate of this manufacturing process preparation, when test, can bear than the bigger stress of front test example, and also can produce very big strain, the aluminum oxide of the composite structure after observation test does not separate with copper sheet fully.Copper sheet still tightly catch alumina wafer, illustrate that the boundary strength of aluminum oxide/copper compound structure is very high, so after test, still can keep the integrity of this composite structure.
In other experimentation, this case contriver passes through the scope of control oxygen partial pressure 0.01 to 1.1 * 10
5Between the Pa, can obtain good effect.In addition, junction temperature is controlled between the fusing point of the eutectic point of copper and cupric oxide and copper, perhaps with junction temperature between the eutectic point of copper and cupric oxide and 1000 ℃, can obtain good effect.
Above example proof is with the manufacturing process of two stages preoxidation, and the surface of processing copper sheet is not only lower because of institute's use temperature earlier, reduction will have contribution to cost, and,, very big help is also arranged to can count life-span backward with ten thousand times switch round-robin high power electronic part because of the boundary strength height.
In sum, the present invention discloses a kind of composite structure in conjunction with copper and aluminum oxide, and this support plate provides heat radiation and insulating basic demand simultaneously.And, have only 10 because of the specific resistance of copper is extremely low
-4Ω m is so can make various circuits or contact in the part of copper by etching mode.By this circuit or contact, this composite structure can be integrated and encapsulation with the high power electronic part, reaches the function of good electrical connection and heat radiation.In addition, the surface that utilizes the processing of two stages preoxidation to handle copper sheet, because of institute's use temperature is lower, cost reduced will contribution.In addition, because of the boundary strength height of composite structure,, very big help is also arranged to can count growth backward with the life-span of ten thousand times on-off (on-off) round-robin high power electronic part.
The specific embodiment that is proposed in the detailed description of preferred embodiment only is a technology contents of the present invention for convenience of description; but not with narrow sense of the present invention be limited to the foregoing description; under the situation that does not exceed spirit of the present invention and following claim protection domain; the many variations of being done is implemented, and all belongs to scope of the present invention.
Claims (10)
1. the manufacture method of a ceramic/metal composite structure comprises following steps:
Copper sheet is carried out multistage pre-oxidation treatment;
Described copper sheet is placed on the ceramic substrate;
Heat described copper sheet and described ceramic substrate to a junction temperature and carry out joining process.
2. the manufacture method of ceramic/metal composite structure as claimed in claim 1, wherein, described multistage pre-oxidation treatment comprises the pre-oxidation treatment of fs and the pre-oxidation treatment of subordinate phase.
3. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, the temperature of the pre-oxidation treatment in first and second stage is between 50 ℃ to 700 ℃.
4. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, the time of the pre-oxidation treatment in first and second stage is between 1 to 600 minute.
5. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, the oxygen partial pressure in the atmosphere of the pre-oxidation treatment in first and second stage is 0.01 to 1.1 * 10
5Between the Pa.
6. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, the surplus temperature of the described copper sheet after the pre-oxidation treatment that the starting temperature of the pre-oxidation treatment of described subordinate phase equals the described fs is finished.
7. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, the ratio of the kelvin rating of the kelvin rating of the top temperature of the pre-oxidation treatment in described first and second stage and the fusing point of copper is less than or equal to 0.75.
8. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, described junction temperature is between the fusing point of the eutectic point of copper and cupric oxide and copper.
9. the manufacture method of ceramic/metal composite structure as claimed in claim 2, wherein, described junction temperature is between the eutectic point of copper and cupric oxide and 1000 ℃.
10. the manufacture method of ceramic/metal composite structure as claimed in claim 1, wherein, described multistage pre-oxidation treatment comprises the pre-oxidation treatment of fs, the pre-oxidation treatment of subordinate phase and the pre-oxidation treatment of phase III.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
| CN104425407A (en) * | 2013-08-28 | 2015-03-18 | 腾瑞光电科技股份有限公司 | Radiating film substrate structure and manufacturing method thereof |
| CN108264371A (en) * | 2016-12-30 | 2018-07-10 | 南京中江新材料科技有限公司 | A kind of Zirconia reinforced alumina ceramic direct copper base plate preparation method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364748A (en) * | 2002-01-31 | 2002-08-21 | 中国科学院上海硅酸盐研究所 | Combining method for aluminium nitride and copper |
| AU2003229282A1 (en) * | 2002-05-15 | 2003-12-02 | Jurgen Schulz-Harder | Method for producing a ceramic-copper composite substrate |
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2007
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
| CN104425407A (en) * | 2013-08-28 | 2015-03-18 | 腾瑞光电科技股份有限公司 | Radiating film substrate structure and manufacturing method thereof |
| CN108264371A (en) * | 2016-12-30 | 2018-07-10 | 南京中江新材料科技有限公司 | A kind of Zirconia reinforced alumina ceramic direct copper base plate preparation method |
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